CN112782486A - Multi-frequency-point dielectric constant measuring device based on stepped impedance resonance structure - Google Patents
Multi-frequency-point dielectric constant measuring device based on stepped impedance resonance structure Download PDFInfo
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- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
- G01R27/26—Measuring inductance or capacitance; Measuring quality factor, e.g. by using the resonance method; Measuring loss factor; Measuring dielectric constants ; Measuring impedance or related variables
- G01R27/2617—Measuring dielectric properties, e.g. constants
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
- G01R27/26—Measuring inductance or capacitance; Measuring quality factor, e.g. by using the resonance method; Measuring loss factor; Measuring dielectric constants ; Measuring impedance or related variables
- G01R27/2617—Measuring dielectric properties, e.g. constants
- G01R27/2623—Measuring-systems or electronic circuits
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Abstract
The invention relates to a multi-frequency-point dielectric constant measuring device based on a stepped impedance resonance structure, which comprises a first dielectric layer, a second dielectric layer and a third dielectric layer from top to bottom, wherein a first metal layer, a second metal layer and a third metal layer are etched on the lower surface of the first dielectric layer, a fourth metal layer is etched on the upper surface of the third dielectric layer, and a cavity filled with a material to be measured is arranged in the center of the second dielectric layer. The invention utilizes signal lines with different widths to form microstrip lines with different impedance sizes so as to form a stepped impedance resonance structure, the structure can generate a plurality of discrete resonance frequency points in a broadband, and the dielectric constant of a measured material in a cavity of a measured solid or liquid or solid powder can be deduced through electromagnetic parameters measured by a vector network analyzer and electromagnetic parameters simulated by electromagnetic simulation software HFSS, so that the multi-frequency-point dielectric constant measuring device based on the stepped impedance resonance structure is finally realized.
Description
Technical Field
The invention relates to a measuring device, in particular to a multi-frequency-point dielectric constant measuring device based on a stepped impedance resonance structure.
Background
The dielectric constant of a material is one of the most important properties in the design of microwave radio frequency devices. The dielectric constant of the material does not become constant with frequency changes, which can cause dispersion in the transmission line, resulting in pulse distortion in ultra-wideband systems. Therefore, the characteristics of the broadband dielectric constant material need to be well understood to allow precise design of microwave rf devices.
The dielectric constant measuring method of microwave frequency band material is mainly divided into resonance method and non-resonance method. In the non-resonant method, there is mainly a transmission-reflection technique. The non-resonant method for realizing broadband dielectric constant measurement is relatively easy to realize, however, the non-resonant method is influenced by calibration errors, irreproducibility caused by multiple measurements, mismatch of connectors and impedance and the like, so that the measurement result error is large.
A more accurate method of testing the dielectric constant of a material than a non-resonant method is the resonant method. The resonance method is to provide an accurate dielectric constant by full-wave analysis of electromagnetic field distribution using a special resonance structure, such as a resonant cavity, a dielectric resonance, and the like. However, most non-resonant methods for testing the dielectric constant of the material can only measure the dielectric constant value at a certain frequency point, and cannot obtain the dielectric constant change rule of the material in a wide frequency band. Therefore, the broadband dielectric constant measurement method is a very meaningful test method.
Disclosure of Invention
In order to solve the above problems, the present invention provides a multi-frequency-point dielectric constant measuring apparatus based on a stepped impedance resonance structure, which derives a node constant by generating a plurality of discrete resonance frequency points in a wide frequency band.
In order to achieve the purpose, the invention is realized by the following technical scheme:
the invention relates to a multi-frequency-point dielectric constant measuring device based on a stepped impedance resonance structure, which comprises a first dielectric layer, a second dielectric layer and a third dielectric layer from top to bottom, wherein a first metal layer, a second metal layer and a third metal layer are etched on the lower surface of the first dielectric layer, a fourth metal layer is etched on the upper surface of the third dielectric layer, and a cavity filled with a material to be measured is arranged in the center of the second dielectric layer.
The invention is further improved in that: the area size of the cavity surface is smaller than the area of the second metal layer.
The invention is further improved in that: the material to be detected in the cavity is solid or liquid or solid powder, such as Rogers plate, liquid crystal, ceramic powder and the like.
The invention is further improved in that: the first metal layer, the second metal layer and the third metal layer are conductor strips of microstrip lines with different impedances.
The invention is further improved in that: the first metal layer, the second metal layer and the third metal layer have impedance values of Z1, Z2 and Z3, respectively, and electrical lengths of q1, q2 and q3, respectively, which must satisfy the formulas Z1/Z2= tan (q1) · tan (q2/2) and Z3/Z2= tan (q3) · tan (q 2/2).
The invention is further improved in that: the ratio of the length of the microstrip line conductor strip corresponding to the second metal layer to the length of the microstrip line conductor strip corresponding to the first metal layer and the third metal layer is larger, the more resonance frequency points are generated, the more frequency points can be used for measuring the dielectric constant of the measured solid/liquid/solid powder, and the more abundant the result is.
The invention is further improved in that: the fourth metal layer is a grounding plate of the microstrip line.
The invention is further improved in that: the measuring device may be used to measure the dielectric constant of the dielectric anisotropic material at different bias voltages.
The invention is further improved in that: the measuring device can be used for measuring the dielectric constant of a plurality of frequency points of the measured material S within 0GHz-20 GHz.
The invention has the beneficial effects that: the invention utilizes signal lines with different widths to form microstrip lines with different impedance sizes so as to form a stepped impedance resonance structure, the structure can generate a plurality of discrete resonance frequency points in a broadband, and the dielectric constant of a measured material in a cavity of a measured solid or liquid or solid powder can be deduced through electromagnetic parameters measured by a vector network analyzer and electromagnetic parameters simulated by electromagnetic simulation software HFSS, so that the multi-frequency-point dielectric constant measuring device based on the stepped impedance resonance structure is finally realized.
The invention can measure the dielectric constant of solid, liquid or solid powder, measure the dielectric constant of a plurality of frequency points of a measured object in a wide frequency band, and measure the dielectric constant of a measured material under different voltages.
Drawings
FIG. 1 is a schematic diagram of the structure of the present invention after being disassembled.
Fig. 2 is a schematic view of the assembled structure of the present invention.
Detailed Description
In the following description, for purposes of explanation, numerous implementation details are set forth in order to provide a thorough understanding of the embodiments of the invention. It should be understood, however, that these implementation details are not to be interpreted as limiting the invention. That is, in some embodiments of the invention, such implementation details are not necessary. In addition, some conventional structures and components are shown in simplified schematic form in the drawings.
As shown in fig. 1-2, the present invention is a multi-frequency point permittivity measuring apparatus based on a stepped impedance resonance structure, the measuring apparatus includes a first dielectric layer D1, a second dielectric layer D2, and a third dielectric layer D3 from top to bottom, a first metal layer M1, a second metal layer M2, and a third metal layer M3 are etched on a lower surface of the first dielectric layer D1, a fourth metal layer M4 is etched on an upper surface of the third dielectric layer D3, the first metal layer M1, the second metal layer M2, and the third metal layer M3 are conductor strips of microstrip lines of different impedances, the first metal layer M1, the second metal layer M1, and the third metal layer M1 correspond to impedance values Z1, and electrical lengths q1, respectively are q1, q1 and q1, which must satisfy the formula Z1/Z1 = tan (tan 72) tan q = tan 72/1 and tan 72 (tan 3/1/tan q) and tan 3/1 (tan 3/1), in addition, the larger the ratio of the length of the microstrip line conductor strip corresponding to the second metal layer M2 to the length of the microstrip line conductor strip corresponding to the first metal layer M1 and the third metal layer M3 is, the more resonance frequency points are generated, the more frequency points can be used for measuring the dielectric constant of the measured solid/liquid/solid powder, and the more the result is, the fourth metal layer M4 is a ground plate of the microstrip line, a cavity W filled with the measured material is arranged at the center of the second dielectric layer D2, the area size of the XOY surface of the cavity W is smaller than the area of the second metal layer M2, and the measured material in the cavity W is solid, liquid or solid powder.
The measuring device can be used for measuring the dielectric constant of the measured material under different bias voltages and can also be used for measuring the dielectric constant of a plurality of frequency points of the measured material S within 0GHz-20 GHz.
When the measured material is solid or liquid or solid powder, the dielectric constant of W when the measured material is solid or liquid or solid powder is given according to the S parameter of a specific vector network analyzer and the specific numerical value of the S parameter fitted by the HFSS, so that the multi-frequency-point dielectric constant measuring device is realized.
When the tested material is a material with dielectric anisotropy, firstly, a vector network analyzer is used for measuring the S1 parameter of the device under the condition of not applying external bias voltage, the dielectric constant 1 of the tested material under the condition of S1 parameter is fitted by electromagnetic simulation software HFSS, so that the dielectric constant 1 of the tested material when not powered is deduced, and then, applying a DC bias voltage between the first metal layer M1 and the second metal layer M2, measuring the S2 parameter of the device under the condition of applying an external bias voltage by using a vector network analyzer, fitting the dielectric constant 2 of the corresponding measured material under the condition of applying the S2 parameter by using an electromagnetic simulation software HFSS again, therefore, the dielectric constant 2 of the tested material when the external bias voltage is applied is deduced, and finally the dielectric constant corresponding to the material with dielectric anisotropy under different bias voltages can be obtained.
When the material to be measured is a liquid crystal material, first, an alignment film is provided on the surface of the second metal layer M2 or the fourth metal layer M4 to change the liquid crystal molecular orientation, then, a vector network analyzer is used for measuring S1 parameters, electromagnetic simulation software HFSS is used for fitting the dielectric constant 1 of the corresponding liquid crystal under the condition of S1 parameters, so that the dielectric constant 1 corresponding to the molecular orientation of the liquid crystal at the moment is deduced, applying DC bias voltage between the first metal layer M1 and the second metal layer M2 to make the liquid crystal molecules point to the direction parallel to the DC bias voltage, measuring the S2 parameter of the device by using a vector network analyzer, fitting the dielectric constant 2 of the corresponding liquid crystal under the condition of S2 parameter by using electromagnetic simulation software HFSS again, therefore, the dielectric constant 2 corresponding to the liquid crystal molecules in a mode parallel to the external bias voltage is deduced, and finally the dielectric constants corresponding to the liquid crystal molecules in different direction directions can be obtained.
The above description is only an embodiment of the present invention, and is not intended to limit the present invention. Various modifications and alterations to this invention will become apparent to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the scope of the claims of the present invention.
Claims (9)
1. A multi-frequency-point dielectric constant measuring device based on a stepped impedance resonance structure comprises a first medium layer (D1), a second medium layer (D2) and a third medium layer (D3) from top to bottom, and is characterized in that: a first metal layer (M1), a second metal layer (M2) and a third metal layer (M3) are etched on the lower surface of the first dielectric layer (D1), a fourth metal layer (M4) is etched on the upper surface of the third dielectric layer (D3), a cavity (W) filled with a tested material is arranged in the center of the second dielectric layer (D2), and the cavity (W) is centrosymmetric.
2. The apparatus of claim 1, wherein the multi-frequency-point dielectric constant measuring device comprises: the size of the area of the XOY surface of the cavity (W) is smaller than the area of the second metal layer (M2).
3. The multi-frequency-point dielectric constant measuring device based on the stepped impedance resonant structure of claim 1 or 2, wherein: the material to be measured in the cavity (W) is solid or liquid or solid powder.
4. The apparatus of claim 1, wherein the multi-frequency-point dielectric constant measuring device comprises: the first metal layer (M1), the second metal layer (M2) and the third metal layer (M3) are conductor strips of microstrip lines of different impedances.
5. The apparatus of claim 4, wherein the multi-frequency-point dielectric constant measuring device comprises: the impedance values of the first metal layer (M1), the second metal layer (M2), and the third metal layer (M3) are Z1, Z2, and Z3, respectively, the electrical lengths are q1, q2, and q3, respectively, and the formulas Z1/Z2= tan (q1) · tan (q2/2) and Z3/Z2= tan (q3) · tan (q2/2) are satisfied.
6. The apparatus of claim 5, wherein the multi-frequency-point dielectric constant measuring device comprises: the ratio of the length of the microstrip line conductor strip corresponding to the second metal layer (M2) to the length of the microstrip line conductor strip corresponding to the first metal layer (M2) and the third metal layer (M3) is larger, the more resonance frequency points are generated, the more frequency points can be used for measuring the dielectric constant of the measured solid/liquid/solid powder, and the richer results are obtained.
7. The apparatus of claim 1, wherein the multi-frequency-point dielectric constant measuring device comprises: the fourth metal layer (M4) is a ground plate of the microstrip line.
8. The multi-frequency-point dielectric-constant measuring device based on the stepped-impedance resonant structure as recited in any one of claims 1 to 7, wherein: the measuring device can be used for measuring the dielectric constant of the dielectric anisotropic material under different bias voltages.
9. The multi-frequency-point dielectric-constant measuring device based on the stepped-impedance resonant structure as recited in any one of claims 1 to 7, wherein: the measuring device can be used for measuring the dielectric constants of a plurality of frequency points of the measured material S within 0GHz-20 GHz.
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Cited By (1)
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|---|---|---|---|---|
| CN115267347A (en) * | 2022-06-08 | 2022-11-01 | 安徽师范大学 | High-sensitivity dual-band microwave sensor for measuring low dielectric constant |
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