CN113937087A - Wiring structure based on HTCC technology, preparation method thereof and ceramic shell - Google Patents
Wiring structure based on HTCC technology, preparation method thereof and ceramic shell Download PDFInfo
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- CN113937087A CN113937087A CN202111107317.1A CN202111107317A CN113937087A CN 113937087 A CN113937087 A CN 113937087A CN 202111107317 A CN202111107317 A CN 202111107317A CN 113937087 A CN113937087 A CN 113937087A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
- H01L23/08—Containers; Seals characterised by the material of the container or its electrical properties the material being an electrical insulator, e.g. glass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
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Abstract
The invention provides a wiring structure based on HTCC technology, a preparation method thereof and a ceramic shell, belonging to the technical field of high-frequency high-speed ceramic packaging, wherein the wiring structure based on the HTCC technology comprises the following steps: a lower layer ceramic member; the upper-layer ceramic piece and the lower-layer ceramic piece jointly enclose to form an air cavity; at least one planar GCPW transmission line is formed on the upper surface of the air cavity formed by the lower ceramic piece, at least one vertical GCPW transmission line is formed on the upper surface of the part, outside the air cavity, of the lower ceramic piece, the upper surface and the side surface of the upper ceramic piece, and the projection of the vertical GCPW transmission line on the lower ceramic piece is crossed with the planar GCPW transmission line. Compared with a buried layer GCPW structure with the same characteristic impedance, the wiring structure based on the HTCC technology has the advantages that the line width of a central conduction band is widened, the processing and the manufacturing are more convenient, the process production difficulty is reduced, and the wiring structure is easy to realize.
Description
Technical Field
The invention belongs to the technical field of high-frequency high-speed ceramic packaging, and particularly relates to a wiring structure based on an HTCC technology, a preparation method thereof and a ceramic shell.
Background
With the development of wireless communication technology, microwave millimeter wave circuits and systems are widely used and are developed towards higher frequency, high speed, high integration, high complexity and miniaturization, so that the package shell for microwave millimeter waves also needs to be improved.
For a High-integration component or a system, a cross phenomenon may occur in complex interconnection among a plurality of microwave millimeter wave circuits, a conventional planar transmission line structure cannot meet the requirement of cross wiring, cross interconnection transmission lines need to be designed between different layers of a ceramic medium based on an HTCC (abbreviation of High-temperature co-fired ceramics, chinese explanation is High-temperature co-fired ceramics) technology, a general structure is a transition form of surface GCPW (abbreviation of english group coplanar waveguide) -buried layer GCPW-surface GCPW, and interconnection between different layers is realized through metallized via holes.
However, the cross-connection transmission line implemented by the transmission line structure and the metalized via hole has large loss, and the line width of the central conduction band of the buried layer GCPW transmission line is correspondingly reduced along with the increase of frequency, even exceeds the production limit of the process, so that the cross-connection transmission line cannot be implemented.
Disclosure of Invention
The invention aims to provide a wiring structure based on an HTCC technology, a preparation method thereof and a ceramic shell, and aims to solve the technical problems that the traditional transmission line structure and a cross-connection transmission line realized by a metalized via hole have large loss, and the line width of a central conduction band of a buried layer GCPW transmission line is correspondingly reduced along with the increase of frequency, even exceeds the production limit of the process and cannot be realized.
In order to achieve the purpose, the invention adopts the technical scheme that:
in a first aspect, the present invention provides a wiring structure based on HTCC technology comprising: a lower layer ceramic member; the upper-layer ceramic piece and the lower-layer ceramic piece jointly enclose to form an air cavity; at least one planar GCPW transmission line is formed on the upper surface of the air cavity formed by the lower ceramic piece, at least one vertical GCPW transmission line is formed on the upper surface of the part, outside the air cavity, of the lower ceramic piece, the upper surface and the side surface of the upper ceramic piece, and the projection of the vertical GCPW transmission line on the lower ceramic piece is crossed with the planar GCPW transmission line.
In one possible implementation, the upper ceramic piece includes: a top wall; the two side walls are respectively connected to two ends of the top wall, the two side walls are both connected with the upper surface of the lower-layer ceramic part, and the top wall, the side walls and the lower-layer ceramic part are enclosed together to form the air cavity;
the upper surface of the lower-layer ceramic part outside the air cavity, the side surfaces of the two side walls and the upper surface of the top wall form the vertical GCPW transmission line together.
In a possible implementation manner, the two side walls are both perpendicular to the top wall, and the projection of the vertical GCPW transmission line on the lower-layer ceramic part is perpendicular to the planar GCPW transmission line in a cross manner.
In one possible implementation, the surface of the upper ceramic piece constituting the air cavity is a metalized surface.
In one possible implementation manner, the ground wire in the planar GCPW transmission line is connected with the ground wire in the vertical GCPW transmission line and the lower surface of the lower-layer ceramic piece in a metallization mode through a metallization through hole.
In one possible implementation manner, the surface of the planar GCPW transmission line and the surface of the vertical GCPW transmission line are plated with a nickel-gold surface layer.
The wiring structure based on the HTCC technology provided by the invention at least has the following technical effects: compared with the traditional technology, the wiring structure based on the HTCC technology provided by the invention has the advantages that the planar GCPW transmission line and the vertical GCPW transmission line realize three-dimensional cross interconnection, so that the planar GCPW transmission line is similar to a coaxial line structure, the loss of the planar GCPW transmission line and the crosstalk between the planar GCPW transmission line and the vertical GCPW transmission line can be effectively reduced, compared with a buried layer GCPW structure with the same characteristic impedance, the central conduction band line width is widened, the processing and the manufacturing are more convenient, the process production difficulty is reduced, and the realization is easy; when the planar GCPW transmission line and the vertical GCPW transmission line transmit radio frequency signals, the capacity of the transmission line can reach a V wave band, the transmission performance is good, the return loss and the insertion loss are low, the isolation between two paths of radio frequency signals is good, the flatness in the band is good, and no resonance point exists.
In a second aspect, the present invention also provides a method for preparing a wiring structure based on HTCC technology, comprising the steps of:
manufacturing a raw ceramic chip;
processing an air cavity on the green ceramic chip;
manufacturing a planar GCPW transmission line metallization pattern on the surface of the air cavity formed by the green ceramic chip;
filling sacrificial materials into the air cavity, and performing lamination processing on the green ceramic chip;
carrying out lamination treatment on the laminated green ceramic chips, and adjusting and controlling the interlayer density and the cavity shape through technological parameters;
cutting and cracking the green ceramic chips into single green ceramic pieces;
manufacturing a vertical GCPW transmission line metallization pattern on the surface of a single raw ceramic piece;
sintering the green ceramic part, wherein in the sintering process of the green ceramic part, the sacrificial material is lost by burning, and the ceramic part with an air cavity is prepared;
and carrying out surface nickel plating and surface gold plating treatment on the ceramic piece to obtain the wiring structure based on the HTCC technology.
In a possible implementation manner, in the step of processing the air cavity on the green ceramic chip, the method further includes the steps of: and processing a grounding hole on the green ceramic chip.
In a possible implementation mode, in the step of manufacturing the planar GCPW transmission line metallization pattern on the surface of the air cavity formed by the green ceramic chip, the planar GCPW transmission line metallization pattern is manufactured by adopting a screen printing technology;
and/or the presence of a gas in the gas,
and in the step of manufacturing the vertical GCPW transmission line metallization pattern on the surface of the single green ceramic piece, the vertical GCPW transmission line metallization pattern is manufactured by adopting a printing technology.
The method for preparing the wiring structure based on the HTCC technology is suitable for preparing the wiring structure based on the HTCC technology in any implementation mode, sacrificial materials are filled in the air cavity, so that the prepared wiring structure has a good cavity shape, the loss of the transmission line can be reduced and the crosstalk between the transmission line and the transmission line can be reduced by carrying out the wiring of a planar GCPW transmission line and a vertical GCPW transmission line inside and outside the air cavity, and compared with a buried layer GCPW structure with the same characteristic impedance, the central conduction band line width is widened, the processing and the manufacturing are more convenient, the process production difficulty is reduced, and the method is easy to realize; when the prepared planar GCPW transmission line and the vertical GCPW transmission line transmit radio frequency signals, the capacity of the transmission line can reach a V wave band, the transmission performance is good, the return loss and the insertion loss are low, the isolation between two paths of radio frequency signals is good, the flatness in the band is good, and no resonance point exists.
In a third aspect, the invention also provides a ceramic housing comprising a wiring structure based on HTCC technology as described in any of the above implementations.
The ceramic shell provided by the invention comprises the wiring structure based on the HTCC technology in any implementation mode, the technical effects of the wiring structure and the wiring structure are the same, and the description is omitted.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed for the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a wiring structure based on HTCC technology according to an embodiment of the present invention;
FIG. 2 is a partial schematic diagram of a wiring structure based on HTCC technology according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of another exemplary layout structure based on HTCC technology according to the present invention;
FIG. 4 is a graph showing simulation results of a first RF signal transmitted through a planar GCPW transmission line according to one embodiment of the present invention;
FIG. 5 is a diagram illustrating simulation results of a second RF signal transmitted through a vertical GCPW transmission line according to an embodiment of the present invention;
FIG. 6 is a graph showing the simulation results of the isolation of the first RF signal and the second RF signal respectively transmitted through the planar GCPW transmission line and the vertical GCPW transmission line according to one embodiment of the present invention;
FIG. 7 is a flow chart of a method for fabricating a wiring structure based on HTCC technology according to an embodiment of the present invention;
fig. 8 is a schematic process diagram of a method for manufacturing a wiring structure based on HTCC technology according to an embodiment of the invention.
Description of reference numerals:
100. wiring structure 110, lower ceramic member 120, and upper ceramic member
121. Top wall 122, side walls 130, air chamber
140. Planar GCPW transmission line 150 and vertical GCPW transmission line
200. First radio frequency signal 300, second radio frequency signal
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
It will be understood that when an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. When an element is referred to as being "disposed on," "disposed on," or "secured to" another element, it can be directly on the other element or intervening elements may also be present. "plurality" means two or more. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs.
Referring to fig. 1 to 8, a wiring structure 100 based on HTCC technology, a method for manufacturing the wiring structure, and a ceramic case according to an embodiment of the present invention will be described.
Referring to fig. 1 to 3, an embodiment of a wiring structure 100 based on HTCC technology includes: a lower ceramic member 110; and an upper ceramic member 120, which forms an air cavity 130 together with the lower ceramic member 110. At least one planar GCPW transmission line 140 is formed on the upper surface of the lower ceramic element 110 forming the air cavity 130, at least one vertical GCPW transmission line 150 is formed on the upper surface of the lower ceramic element 110 outside the air cavity 130, the upper surface and the side surface of the upper ceramic element 120, and the projection of the vertical GCPW transmission line 150 on the lower ceramic element 110 is crossed with the planar GCPW transmission line 140.
It should be noted that the wiring structure 100 based on the HTCC technology provided in the embodiment of the present invention may be applied to ceramic components such as alumina ceramics and aluminum nitride ceramics, and can solve the interconnection problem between microwave millimeter wave circuits under the conditions of high frequency, high speed, high integration, high complexity, and the like, and improve the electrical performance and manufacturability of the transmission wiring structure 100 in the packaging process. Meanwhile, the wiring structure 100 based on the HTCC technology belongs to a radio frequency signal transmission line layout wiring structure 100 in the design and processing process of a millimeter wave high-frequency high-speed integrated circuit packaging shell, and the structure can effectively improve the radio frequency performance of a high-frequency section of a transmission line, reduce the transmission loss and promote the packaging shell to develop towards the directions of three-dimensional, miniaturization and integration.
Specifically, the planar GCPW transmission line 140 and the vertical GCPW transmission line 150 may be provided in more than one, two, three, etc., without limitation. The planar GCPW transmission line 140 is used to transmit a first rf signal 200, the vertical GCPW transmission line 150 is used to transmit a second rf signal 300, the first rf signal 200 is transmitted from one end of the planar GCPW transmission line 140 to the other end, and the second rf signal 300 is transmitted from one end of the vertical GCPW transmission line 150 to the other end, specifically, from one end of the upper surface of the lower ceramic element 110 to the side surface of the upper ceramic element 120, then is wall-turned from the side surface to the upper surface of the upper ceramic element 120, and then is transmitted from the other opposite side surface to one end of the upper surface of the lower ceramic element 110.
As shown in fig. 4 to 6, fig. 4 is a graph of simulation results of the first rf signal 200 passing through the planar GCPW transmission line 140, where curve 1 is return loss and curve 2 is insertion loss, fig. 5 is a graph of simulation results of the second rf signal 300 passing through the vertical GCPW transmission line 150, where curve 3 is return loss and curve 4 is insertion loss, and fig. 6 is a graph of simulation results of isolation of the first rf signal 200 and the second rf signal 300 passing through the planar GCPW transmission line 140 and the vertical GCPW transmission line 150, respectively, where curve 5 is isolation.
The wiring structure 100 based on the HTCC technology provided by the embodiment of the present invention has at least the following technical effects: compared with the prior art, the wiring structure 100 based on the HTCC technology provided by the embodiment of the invention has the advantages that the planar GCPW transmission line 140 and the vertical GCPW transmission line 150 realize three-dimensional cross interconnection, so that the planar GCPW transmission line 140 is similar to a coaxial line structure, the loss of the planar GCPW transmission line 140 and the crosstalk between the planar GCPW transmission line 140 and the vertical GCPW transmission line 150 can be effectively reduced, compared with a buried layer GCPW structure with the same characteristic impedance, the central conduction band line width is widened, the processing and the manufacturing are more convenient, the process production difficulty is reduced, and the realization is easy; when the planar GCPW transmission line 140 and the vertical GCPW transmission line 150 transmit radio-frequency signals, the capacity of the transmission lines can reach a V wave band, the transmission performance is good, the return loss and the insertion loss are low, the isolation between two paths of radio-frequency signals is good, the flatness in the band is good, and no resonance point exists.
Based on the wiring structure 100 in the above embodiment, referring to fig. 1 to 3, in some possible embodiments, the upper ceramic element 120 includes: a top wall 121; the two side walls 122 are respectively connected to two ends of the top wall 121, the two side walls 122 are both connected with the upper surface of the lower-layer ceramic part 110, and the top wall 121, the side walls 122 and the lower-layer ceramic part 110 are enclosed together to form an air cavity 130; the upper surface of the lower ceramic element 110 outside the air cavity 130, the side surfaces of the two side walls 122, and the upper surface of the top wall 121 together form a vertical GCPW transmission line 150. That is, one end of the upper surface of the lower ceramic element 110, the side surface of one of the side walls 122, the upper surface of the top wall 121, the side surface of the other one of the side walls 122, and the other end of the upper surface of the lower ceramic element 110 together form a vertical GCPW transmission line 150.
Specifically, the two side walls 122 and the top wall 121 form a n-shape, and the upper surface of the lower ceramic part 110 is located at a central position or a deviated position, so that the two ends of the upper surface of the lower ceramic part 110 are provided with the start end and the end of the vertical GCPW transmission line 150, so that the second rf signal 300 is transmitted from one end of the lower ceramic part 110 to the side surface of one of the side walls 122, then to the upper surface of the top wall 121, then to the side surfaces of the side walls 122, and finally to the other end of the lower ceramic part 110.
Based on the above-mentioned upper ceramic part 120, in a specific embodiment, both side walls 122 are disposed perpendicular to the top wall 121, and the projection of the vertical GCPW transmission line 150 on the lower ceramic part 110 is disposed perpendicular to the planar GCPW transmission line 140. So configured, it is convenient to reduce transmission loss, reduce crosstalk between the planar GCPW transmission line 140 and the vertical GCPW transmission line 150, and facilitate manufacturing.
In some possible embodiments, the surface of the upper ceramic piece 120 that forms the air cavity 130 is a metalized surface. Specifically, the lower surface of the top wall 121 and the inner side surface of the side wall 122 are both required to be metallized, so as to ensure a good grounding effect.
In some possible embodiments, the ground line in the planar GCPW transmission line 140 is connected to the ground line in the vertical GCPW transmission line 150 and the lower surface of the lower ceramic piece 110 by metalized vias. This is so arranged that the entire wiring structure 100 achieves a common ground effect.
In some possible embodiments, the surface of the planar GCPW transmission line 140 and the surface of the vertical GCPW transmission line 150 are plated with ni-au. By the arrangement, compared with a buried layer GCPW structure prepared by tungsten slurry or molybdenum slurry, the transmission line can be effectively worn.
Based on the above embodiments, the planar GCPW transmission line 140 is more similar to a coaxial line structure, wherein the central conduction band of the planar GCPW transmission line 140 is equivalent to the central conductor of the coaxial line, the air cavity 130 is equivalent to the medium between the inner conductor and the outer conductor of the coaxial line, and the metallization on the surface of the air cavity 130 is equivalent to the outer conductor of the coaxial line, which can effectively reduce the loss of the planar GCPW transmission line 140 and the crosstalk between the planar GCPW transmission line 140 and the vertical GCPW transmission line 150.
Based on the same inventive concept, please refer to fig. 7, an embodiment of the present invention further provides a method for manufacturing a wiring structure based on the HTCC technology, including the following steps:
s100, manufacturing a raw ceramic chip.
Specifically, a casting process is adopted to manufacture the green ceramic chip. The method comprises the steps of firstly preparing a raw porcelain belt material, cutting the raw porcelain belt material into a plurality of raw porcelain pieces with fixed sizes, then preparing a proper slurry for the casting of the raw porcelain pieces through a binder system, specifically adopting a binder system with a low vitrification temperature, certainly not limiting to the low vitrification temperature, and improving the surface state of a carrier belt by pretreating the surface of the carrier belt to ensure that the surface of the carrier belt contains a large amount of hydroxyl, carboxyl, amino and the like, controlling the enrichment and distribution state of the binder of the raw porcelain pieces, ensuring that smaller positioning water pressure can be adopted in the subsequent processing of the raw porcelain pieces, and further ensuring the bonding effect between the layers of the whole porcelain pieces.
And S200, processing an air cavity on the green ceramic chip.
And processing an air cavity with a required shape at a specified position on the green ceramic chip by using a mechanical punching mode, a laser punching mode, a punching die or other modes.
S300, manufacturing a planar GCPW transmission line metallization pattern on the surface of the air cavity formed by the green ceramic chip.
And manufacturing a metallized pattern corresponding to the planar GCPW transmission line at the designated position on the surface of the air cavity formed by the green ceramic chip.
S400, filling sacrificial materials into the air cavity, and carrying out lamination processing on the green ceramic chips.
Specifically, the sacrificial material can be prepared to improve the hardness and elastic modulus of the sacrificial material, so that the formability of the cavity is ensured, and the sacrificial material in the cavity is completely removed in the pre-sintering glue discharging process. The sacrificial material forms a sacrificial material film belt with a certain thickness in a flow casting mode, and blanking is conducted according to the shape of the air cavity. The sacrificial material may be burned off during sintering and acrylic resin with a low glass transition temperature is used, but is not limited thereto. During the processing of the green ceramic chip, the shape retention after the cavity is closed is achieved by the filling of the sacrificial material.
S500, carrying out lamination treatment on the laminated green ceramic chips, and adjusting and controlling the interlayer density and the cavity shape through technological parameters.
In the lamination process, the density and the cavity shape between layers can be adjusted through process parameters, so that the strength requirement is met.
S600, cutting and cracking the green ceramic chips into single green ceramic pieces.
The green ceramic chips are cut and split into a plurality of green ceramic pieces according to the number of the air cavities and the target size, so that each green ceramic piece is conveniently subjected to graphical processing, and the processing accuracy is improved.
S700, manufacturing a vertical GCPW transmission line metallization pattern on the surface of a single green ceramic piece.
And forming a metallization pattern corresponding to the vertical GCPW transmission line at a corresponding designated position on the upper surface and the side surface of the single green ceramic piece except the air cavity.
And S800, sintering the green ceramic part, wherein in the sintering process of the green ceramic part, the sacrificial material is lost by burning, and the ceramic part with the air cavity is prepared.
In the sintering process, the sacrificial material is gradually burnt out, so that the air cavity in the green ceramic piece can keep a better shape, and the damage to the shape is reduced.
And S900, carrying out surface nickel plating and surface gold plating treatment on the ceramic piece to obtain the wiring structure based on the HTCC technology.
Specifically, the surface of the ceramic piece is plated with nickel and gold, so that the loss of the transmission line can be effectively reduced compared with a buried layer GCPW structure prepared by tungsten paste or molybdenum paste. The wiring structure based on the HTCC technology is not only suitable for alumina ceramics, but also suitable for other ceramics such as aluminum nitride ceramics and the like.
The method for preparing the wiring structure based on the HTCC technology is suitable for preparing the wiring structure based on the HTCC technology in any embodiment, sacrificial materials are filled in the air cavity, so that the prepared wiring structure has a good cavity shape, the loss of the transmission line can be reduced and the crosstalk between the transmission line and the transmission line can be reduced by carrying out the wiring of a planar GCPW transmission line and a vertical GCPW transmission line inside and outside the air cavity, and compared with a buried layer GCPW structure with the same characteristic impedance, the central conduction band line width is widened, the processing and the manufacturing are more convenient, the process production difficulty is reduced, and the method is easy to realize; when the prepared planar GCPW transmission line and the vertical GCPW transmission line transmit radio frequency signals, the capacity of the transmission line can reach a V wave band, the transmission performance is good, the return loss and the insertion loss are low, the isolation between two paths of radio frequency signals is good, the flatness in the band is good, and no resonance point exists.
In some possible embodiments, the step of processing the air cavity on the green ceramic chip further includes the steps of: and processing a grounding hole on the green ceramic chip. It can be understood that, based on the purpose of grounding required by the whole structure, in the process of processing the air cavity, the grounding hole can be processed synchronously by using mechanical punching, laser punching or punching die and the like correspondingly at the position where the grounding hole is required to be processed on the green ceramic chip.
In some possible embodiments, in the step of forming the planar GCPW transmission line metallization pattern on the surface of the green ceramic tile forming the air cavity, the planar GCPW transmission line metallization pattern is formed by using a screen printing technique.
Specifically, when the metallization pattern corresponding to the planar GCPW transmission line is formed, the metallization pattern corresponding to the planar GCPW transmission line may be formed on the lower surface of the air cavity by using a metallization screen printing method, using tungsten, molybdenum, gold, silver, copper, or another conductive material. By the arrangement, the flexibility and universality of manufacturing the metallized pattern can be improved, and the obtained metallized pattern meets the preparation requirement better.
And/or, in some possible embodiments, in the step of manufacturing the vertical GCPW transmission line metallization pattern on the surface of the single green ceramic piece, the vertical GCPW transmission line metallization pattern is manufactured by using a printing technology.
Specifically, when the metallization pattern corresponding to the vertical GCPW transmission line is formed, the metallization pattern corresponding to the vertical GCPW transmission line may be formed on the upper surface and the side surface of the green ceramic member by printing, specifically, outside the air cavity, using tungsten, molybdenum, gold, silver, copper, or other conductive materials. By the arrangement, the flexibility and universality of manufacturing the metallized pattern can be improved, and the obtained metallized pattern meets the preparation requirement better.
Based on the preparation methods in the above examples, in a specific embodiment, a preparation process as shown in fig. 8 may be designed.
Based on the same inventive concept, the embodiment of the present invention further provides a ceramic package including the wiring structure based on the HTCC technology according to any one of the above implementations.
The ceramic case provided in the embodiment of the present invention includes the wiring structure based on the HTCC technology according to any one of the above embodiments, and the technical effects of the two are the same, which are not described herein again.
It is to be understood that, in the foregoing embodiments, various parts may be freely combined or deleted to form different combination embodiments, and details of each combination embodiment are not described herein again, and after this description, it can be considered that each combination embodiment has been described in the present specification, and can support different combination embodiments.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (10)
1. A wiring structure based on HTCC technology, comprising:
a lower layer ceramic member; and
the upper-layer ceramic piece and the lower-layer ceramic piece jointly enclose to form an air cavity;
at least one planar GCPW transmission line is formed on the upper surface of the air cavity formed by the lower ceramic piece, at least one vertical GCPW transmission line is formed on the upper surface of the part, outside the air cavity, of the lower ceramic piece, the upper surface and the side surface of the upper ceramic piece, and the projection of the vertical GCPW transmission line on the lower ceramic piece is crossed with the planar GCPW transmission line.
2. The HTCC technology based wiring structure of claim 1, wherein the upper ceramic piece comprises:
a top wall; the two side walls are respectively connected to two ends of the top wall, the two side walls are both connected with the upper surface of the lower-layer ceramic part, and the top wall, the side walls and the lower-layer ceramic part are enclosed together to form the air cavity;
the upper surface of the lower-layer ceramic part outside the air cavity, the side surfaces of the two side walls and the upper surface of the top wall form the vertical GCPW transmission line together.
3. The HTCC technology based wiring structure of claim 2, wherein both of the side walls are disposed perpendicular to the top wall, and wherein the projection of the vertical GCPW transmission line onto the lower ceramic element is disposed perpendicularly across the planar GCPW transmission line.
4. The HTCC technology based wiring structure of claim 1, wherein the surface of the upper ceramic piece constituting the air cavity is a metalized surface.
5. The HTCC technology based wiring structure of claim 1, wherein the ground line in the planar GCPW transmission line is connected to the ground line in the vertical GCPW transmission line and the lower surface of the underlying ceramic via a metalized via.
6. The HTCC technology based wiring structure of claim 1, wherein a surface of the planar GCPW transmission line and a surface of the vertical GCPW transmission line are plated with a nickel-gold surface layer.
7. Method for preparing a wiring structure based on HTCC technology according to any of the claims 1 to 6, comprising the following steps:
manufacturing a raw ceramic chip;
processing an air cavity on the green ceramic chip;
manufacturing a planar GCPW transmission line metallization pattern on the surface of the air cavity formed by the green ceramic chip;
filling sacrificial materials into the air cavity, and performing lamination processing on the green ceramic chip;
carrying out lamination treatment on the laminated green ceramic chips, and adjusting and controlling the interlayer density and the cavity shape through technological parameters;
cutting and cracking the green ceramic chips into single green ceramic pieces;
manufacturing a vertical GCPW transmission line metallization pattern on the surface of a single raw ceramic piece;
sintering the green ceramic part, wherein in the sintering process of the green ceramic part, the sacrificial material is lost by burning, and the ceramic part with an air cavity is prepared;
and carrying out surface nickel plating and surface gold plating treatment on the ceramic piece to obtain the wiring structure based on the HTCC technology.
8. The method of claim 7, wherein the step of forming the air cavity in the green ceramic sheet further comprises the steps of: and processing a grounding hole on the green ceramic chip.
9. The method according to claim 7, wherein in the step of forming the planar GCPW transmission line metallization pattern on the surface of the green ceramic tile forming the air cavity, the planar GCPW transmission line metallization pattern is formed by a screen printing technique;
and/or the presence of a gas in the gas,
and in the step of manufacturing the vertical GCPW transmission line metallization pattern on the surface of the single green ceramic piece, the vertical GCPW transmission line metallization pattern is manufactured by adopting a printing technology.
10. Ceramic housing comprising a wiring structure based on HTCC technology according to any of the claims 1 to 6.
Priority Applications (1)
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| CN202111107317.1A CN113937087A (en) | 2021-09-22 | 2021-09-22 | Wiring structure based on HTCC technology, preparation method thereof and ceramic shell |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115911799A (en) * | 2022-12-15 | 2023-04-04 | 石家庄烽瓷电子技术有限公司 | Cross line connection module based on HTCC and HTCC assembly |
| CN116598207A (en) * | 2023-04-14 | 2023-08-15 | 株洲艾森达新材料科技有限公司 | Manufacturing method of high-precision HTCC substrate with isolated boss structure |
-
2021
- 2021-09-22 CN CN202111107317.1A patent/CN113937087A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115911799A (en) * | 2022-12-15 | 2023-04-04 | 石家庄烽瓷电子技术有限公司 | Cross line connection module based on HTCC and HTCC assembly |
| CN115911799B (en) * | 2022-12-15 | 2024-05-10 | 石家庄烽瓷电子技术有限公司 | Cross line connection module based on HTCC and HTCC component |
| CN116598207A (en) * | 2023-04-14 | 2023-08-15 | 株洲艾森达新材料科技有限公司 | Manufacturing method of high-precision HTCC substrate with isolated boss structure |
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