CN113921659B - Method for improving MWT hole hiding - Google Patents
Method for improving MWT hole hiding Download PDFInfo
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- CN113921659B CN113921659B CN202111504835.7A CN202111504835A CN113921659B CN 113921659 B CN113921659 B CN 113921659B CN 202111504835 A CN202111504835 A CN 202111504835A CN 113921659 B CN113921659 B CN 113921659B
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- Prior art keywords
- printing
- negative electrode
- aluminum back
- screen
- back field
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- 238000000034 method Methods 0.000 title claims abstract description 14
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 48
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 47
- 238000007639 printing Methods 0.000 claims abstract description 45
- 239000000839 emulsion Substances 0.000 claims abstract description 26
- 239000002002 slurry Substances 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 230000008719 thickening Effects 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 claims description 2
- 238000007650 screen-printing Methods 0.000 abstract description 2
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000004411 aluminium Substances 0.000 description 6
- 238000013461 design Methods 0.000 description 3
- 241001233242 Lontra Species 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M1/00—Inking and printing with a printer's forme
- B41M1/12—Stencil printing; Silk-screen printing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M1/00—Inking and printing with a printer's forme
- B41M1/26—Printing on other surfaces than ordinary paper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
- H01L31/02245—Electrode arrangements specially adapted for back-contact solar cells for metallisation wrap-through [MWT] type solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Printing Plates And Materials Therefor (AREA)
Abstract
The invention discloses a method for improving MWT hole hiding, which is characterized in that when an aluminum back field is printed, a specially-made aluminum back field printing screen is used for printing the aluminum back field, the screen comprises a screen layer, an emulsion is coated on the screen layer, and the thickness of the emulsion at a corresponding negative electrode point on the screen layer is different from that of other parts. According to the invention, the thickness of the film at the position of the negative electrode point hole of the aluminum back field screen printing plate is thickened, so that the thickness of the edge of the printed aluminum back field (close to the negative electrode point) is increased when the battery is printed, the height difference between the aluminum back field and the negative electrode point is reduced, the stress at the hole position is greatly reduced when the battery is printed with a positive electrode, and the hidden crack at the hole position of the MWT negative electrode point is reduced.
Description
Technical Field
The invention belongs to the technical field of photovoltaic module production, and particularly relates to a method for improving MWT hole hiding.
Background
The MWT battery is a battery design that holes are punched in a silicon wafer, electrode points are filled in slurry, negative electrode points are led to the back of the battery, the MWT battery is printed with the hole filling slurry in a first pass to form negative electrode points, back silver slurry is printed in a second pass to form positive electrode points, a back aluminum back field is printed in a third pass, front grid lines are printed in a fourth pass, the front 3 passes of printing are all printing on the back of the silicon wafer, and after the MWT battery is turned over, the fourth pass of printing is on the front of the silicon wafer;
And current MWT design, aluminium back of the body field thickness is about 13 +/-2 um, and MWT negative pole point is for reaching certain porefilling effect, and thickness is about 23 +/-2 um (the low pore-filling that can cause of thickness is unusual), is about 10um with aluminium back of the body field difference in height (positive pole point department does not have the hole, and thickness only needs 6um, can not consider this problem). When grid lines are printed on the front side of the fourth path, the raised negative electrode points (on the back side of the cell) face downwards, so that the stress on the raised negative electrode points is relatively large, the silicon wafer (shown in figure 1) is broken, and the positions of cell holes are hidden and cracked.
Disclosure of Invention
Aiming at the problems in the background art, the invention aims to provide a novel aluminum back surface field design method, and hidden cracks at the positions of MWT negative electrode point holes are reduced.
The invention relates to a method for improving MWT hole hiding, which is characterized in that when an aluminum back field is printed, a specially-made aluminum back field printing screen is used for printing the aluminum back field, the screen comprises a screen yarn layer, an emulsion is coated on the screen yarn layer, and the thickness of the emulsion at a corresponding negative electrode point on the screen yarn layer is larger than that of other parts of the aluminum back field.
Further, the method comprises the following steps:
s1, printing the hole plugging slurry of the MWT battery piece to form a negative electrode point on the battery piece;
s2, printing the back silver paste to form a positive pole;
S3, manufacturing a screen plate used for printing the aluminum back field, wherein the screen plate comprises a screen gauze layer, the thickness of the emulsion corresponding to the position of the negative electrode point is larger than that of other parts of the aluminum back field, and printing the aluminum back field;
and S4, overturning the MWT battery piece, and printing the front grid line.
Further, in the S3, an emulsion with a film thickness of 12-25um is coated on the gauze layer corresponding to the position of the negative electrode point.
As a preferred embodiment of the application, in said S3, a mesh sheet with an emulsion thickness of 25um is used at the negative electrode dot hole position.
The beneficial effect of this application does:
according to the invention, the thickness of the film at the position of the negative electrode point hole of the aluminum back field screen plate is thickened, so that the thickness of the edge of the printed aluminum back field (close to the negative electrode point) is increased when the battery is printed, and the height difference between the aluminum back field and the negative electrode point is reduced, so that the stress at the position of the negative electrode point hole is greatly reduced when the battery is printed with a grid line, and the hidden crack at the position of the MWT negative electrode point hole is reduced.
Drawings
FIG. 1 is a side view of a front grid line printing;
FIG. 2 is a top view of an aluminum back field screen;
FIG. 3 is a schematic illustration of an increase in the thickness of the edge of an aluminum back field made by a method of improving the MWT hole hiding of the present application;
FIG. 4 is a side view of an aluminum back field edge thickening front grid line during printing;
FIG. 5 is a front view of a mesh panel;
in the figure, 1-negative electrode point, 2-aluminum back field, 3-silicon chip, 4-emulsion and 5-gauze are used.
Detailed Description
The invention is described in detail below with reference to the accompanying drawings:
as shown in fig. 3, this embodiment is a method for improving MWT hole hiding, which prints a screen printing aluminum back field with a specially made aluminum back field when printing the aluminum back field, wherein the screen comprises a gauze layer coated with an emulsion, and the thickness of the emulsion at the corresponding negative electrode point on the gauze layer is greater than that of the rest of the aluminum back field.
Further, the method comprises the following steps:
s1, printing the hole plugging slurry of the MWT battery piece to form a negative electrode point on the battery piece;
s2, printing the back silver paste to form a positive pole;
s3, manufacturing a screen plate used for printing the aluminum back surface field, wherein the screen plate comprises a screen gauze layer, the thickness of the emulsion corresponding to the position of the negative electrode point is larger than that of other parts of the aluminum back surface field, and printing the aluminum back surface field;
and S4, overturning the MWT battery piece, and printing front grid lines.
Example 1
This embodiment is a method for improving MWT hole hiding, comprising the steps of:
s1, printing the hole plugging slurry of the MWT battery piece to form a negative electrode point on the battery piece;
s2, printing the back silver paste to form a positive pole;
S3, manufacturing a screen plate used for printing the aluminum back field, wherein the screen plate comprises a screen yarn layer, the thickness of the emulsion corresponding to the negative electrode point position is larger than that of other parts of the aluminum back field, and the emulsion with the film thickness of 12-25 mu m is coated corresponding to the negative electrode point position; then printing an aluminum back surface field;
and S4, overturning the MWT battery piece, and printing the front grid line.
Example 2
As a preferred embodiment of the application, in S3, a mesh plate with an emulsion thickness of 25um is used at the position of the negative electrode dot hole.
The structure of the screen plate of the current printing aluminum back field is shown in figure 2, the number marked in the figure is aperture data, the middle area of the screen plate is a screen gauze, the corresponding structures of a positive electrode point and a negative electrode point are preset in the screen gauze, wherein the aperture of the negative electrode point is 5mm, the aperture of the positive electrode point is 2.7 mm, the distance between the positive electrode points is 27mm, the structure of the screen gauze is shown in figure 5, the electrode point position is coated with a layer of emulsion (screen plate manufacturing general material, a photosensitive emulsion, when the screen plate is manufactured, the photosensitive emulsion is uniformly coated on the screen gauze according to the required thickness, then the non-printing area is exposed by illumination, the non-printing area is solidified, the photosensitive emulsion in the printing area is cleaned, the required graph is formed, the blocking slurry is printed on a silicon wafer (non-printing area), the thickness of the aluminum back field is basically consistent during the conventional printing, the thickness of the emulsion in the area is increased to 25um, as shown in fig. 5, when the aluminum back surface field is printed in the third printing pass, the protruding negative electrode point emulsion of the screen plate will jack up the screen plate, resulting in larger gap in the peripheral region of the negative electrode point, so that more printing paste is printed in this region and the thickness is increased.
Experiment verification edge thickness is about 18 +/-2 um, as shown in figure 3, adopt 12um emulsion otter board among the prior art, actually printing department aluminium back of the body field thickness is about 13 +/-2 um, and thicken to the thick otter board of 25um membrane, actually printing into aluminium back of the body field thickness is about 18 +/-2 um, when printing the fourth grid line, the battery piece is through the upset, the back is down, although reach the height of negative pole point in aluminium back of the body field thickening region like this, 23 +/-2 um, but because the silicon chip has toughness, aluminium back of the body field thickening region can contact the mesa when printing positive grid line, as shown in figure 4, increased area of contact, the negative pole point atress has significantly reduced, thereby avoid the negative pole point because the atress is too big to cause hidden split.
The mode of the invention can increase the contact area of the back when the grid line on the front side is printed on the cell, reduce the stress of the negative electrode point and reduce the hidden crack caused by the stress of the negative electrode point.
The above description is only a preferred embodiment of the present application and should not be taken as limiting the present application, and any modifications, equivalents, improvements and the like that are made within the spirit and principle of the present application should be included in the protection scope of the present application.
Claims (2)
1. A method for improving MWT hole hiding is characterized in that when an aluminum back field is printed, a specially-made aluminum back field printing screen plate is used for printing the aluminum back field, the screen plate comprises a screen yarn layer, an emulsion is coated on the screen yarn layer, and the thickness of the emulsion at the corresponding negative electrode point on the screen yarn layer is different from that of other parts;
The method comprises the following steps:
s1, printing the hole plugging slurry of the MWT battery piece to form a negative electrode point on the battery piece;
s2, printing the back silver paste to form a positive pole;
s3, manufacturing a screen plate used for printing an aluminum back field, wherein the screen plate comprises a screen yarn layer, the thickness of an emulsion corresponding to the position of a negative electrode point is larger than that of other parts of the aluminum back field, printing the aluminum back field, so that the gap of the peripheral area of the negative electrode point is larger, more printing slurry is in the area, and an aluminum back field thickening area is formed;
s4, overturning the MWT battery piece, and printing a front grid line;
in the S3, the position of the corresponding negative electrode point on the gauze layer is coated with 12-25um thick emulsion.
2. The method of claim 1, wherein in step S3, a screen with an emulsion thickness of 25um is used at the position of the negative electrode point holes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111504835.7A CN113921659B (en) | 2021-12-10 | 2021-12-10 | Method for improving MWT hole hiding |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111504835.7A CN113921659B (en) | 2021-12-10 | 2021-12-10 | Method for improving MWT hole hiding |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113921659A CN113921659A (en) | 2022-01-11 |
| CN113921659B true CN113921659B (en) | 2022-06-28 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111504835.7A Active CN113921659B (en) | 2021-12-10 | 2021-12-10 | Method for improving MWT hole hiding |
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| Country | Link |
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| CN (1) | CN113921659B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05124370A (en) * | 1991-11-06 | 1993-05-21 | Tokyo Cosmos Electric Co Ltd | Mask for screen printing |
| CN102386249A (en) * | 2011-10-31 | 2012-03-21 | 北京中联科伟达技术股份有限公司 | High-efficiency crystalline silicon cell with next-generation structure and manufacturing method for high-efficiency crystalline silicon cell |
| CN113035998A (en) * | 2021-02-08 | 2021-06-25 | 江苏日托光伏科技股份有限公司 | Silk-screen printing mode for positive and negative electrode points of MWT battery |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090320698A1 (en) * | 2008-06-26 | 2009-12-31 | Laperna Wong Michele Katherine | Multiple-emusion print screen and method for making same |
-
2021
- 2021-12-10 CN CN202111504835.7A patent/CN113921659B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05124370A (en) * | 1991-11-06 | 1993-05-21 | Tokyo Cosmos Electric Co Ltd | Mask for screen printing |
| CN102386249A (en) * | 2011-10-31 | 2012-03-21 | 北京中联科伟达技术股份有限公司 | High-efficiency crystalline silicon cell with next-generation structure and manufacturing method for high-efficiency crystalline silicon cell |
| CN113035998A (en) * | 2021-02-08 | 2021-06-25 | 江苏日托光伏科技股份有限公司 | Silk-screen printing mode for positive and negative electrode points of MWT battery |
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| Publication number | Publication date |
|---|---|
| CN113921659A (en) | 2022-01-11 |
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Effective date of registration: 20221129 Address after: 20 Xishi Road, Xinwu District, Wuxi City, Jiangsu Province Patentee after: JIANGSU SUNPORT PHOTOVOLTAIC TECHNOLOGY Co.,Ltd. Address before: 211800 no.28-10, Lanhua Road, Qiaolin Street Industrial Park, Pukou District, Nanjing City, Jiangsu Province Patentee before: NANJING RITUO PHOTOVOLTAIC NEW ENERGY Co.,Ltd. |
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