CN113921512A - MicroLED three-primary-color light-emitting structure and preparation method thereof - Google Patents
MicroLED three-primary-color light-emitting structure and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a micro LED (light emitting diode) three-primary-color light emitting structure and a preparation method thereof, and relates to the technical field of photoelectric display. The light emitting structure includes: a display substrate; a substrate-free high temperature polysilicon-thin film transistor structure located on the display substrate; the substrate-free red light OLED structure is positioned on the display substrate and is connected with the substrate-free high-temperature polycrystalline silicon-thin film transistor structure; the substrate-free green light LED structure is positioned on the display substrate and is connected with the substrate-free high-temperature polycrystalline silicon-thin film transistor structure; and the substrate-free blue LED structure positioned on the display substrate is connected with the substrate-free high-temperature polycrystalline silicon-thin film transistor structure. The micro LED three-primary-color light-emitting structure disclosed by the invention can reduce energy consumption, and the substrate-free red-light OLED structure is used for replacing an AlGaInP red-light LED structure, so that the light-emitting efficiency can be improved; the carrier mobility can be improved by using a substrate-free high-temperature polycrystalline silicon-thin film transistor structure for driving.
Description
Technical Field
The invention relates to the technical field of photoelectric display, in particular to a micro LED (light emitting diode) three-primary-color light emitting structure and a preparation method thereof.
Background
The LED technology represented by semiconductor illumination and the full-color display technology of the micron light emitting diode (MicroLED) (the point distance is 100-.
The light emitting chip size in the MiniLED/micro LED display technology is very small (2-30um), so that the problem of light emitting efficiency caused by miniaturization of the LED chip is serious, especially, material defects of a PN junction boundary and an interface have the greatest influence on a quaternary compound (AlGaInP), the light emitting efficiency of the red LED is rapidly reduced along with the reduction of the chip size, and when the size is reduced below 50 μm, the external quantum efficiency of the peak value is less than 10%.
A Thin Film Transistor (TFT) backboard is usually adopted in active drive MicroLED display, high-temperature growth of polycrystalline silicon (HTPS) cannot be realized due to poor heat resistance of a glass substrate of the TFT, a low-temperature polycrystalline silicon (LTPS) technology is usually adopted at present, amorphous silicon grown at low temperature is converted into polycrystalline silicon by laser annealing, and the carrier mobility of the amorphous silicon is 100cm2The ratio/Vs is about, but the yield is low, the cost is high, the energy consumption is large, and the quality of the polycrystalline silicon is to be further improved.
Disclosure of Invention
In view of the above, the present invention provides a micro led three primary color light emitting structure and a method for manufacturing the same, so as to at least partially solve at least one of the above technical problems.
As an aspect of the present invention, there is provided a micro led three primary color light emitting structure, including:
a display substrate;
a substrate-free high-temperature polysilicon-thin film transistor structure located on the display substrate;
the substrate-free red light OLED structure is positioned on the display substrate, is connected with the high-temperature polycrystalline silicon-thin film transistor structure and comprises an anode and a cathode;
the substrate-free green light LED structure is positioned on the display substrate, is connected with the high-temperature polycrystalline silicon-thin film transistor structure and comprises a P electrode and an N electrode;
the substrate-free blue LED structure positioned on the display substrate is connected with the high-temperature polycrystalline silicon-thin film transistor structure and comprises a P electrode and an N electrode.
According to an embodiment of the present invention, the substrate-less high temperature polysilicon-thin film transistor structure includes:
a GaN layer;
SiO2a distributed Bragg reflector layer deposited on the GaN layer;
a high temperature polysilicon-thin film transistor layer grown on the SiO2On the/DBR mirror layer.
According to an embodiment of the present invention, the substrate-less red OLED structure includes:
a GaN layer;
SiO2a layer deposited on the GaN layer;
a transparent electrode layer deposited on the SiO layer2On the layer;
an organic functional layer deposited on the transparent electrode layer;
a cathode metal layer deposited on the organic functional layer;
and a sealant layer coated on the cathode metal layer.
According to an embodiment of the present invention, the substrate-less green LED structure and the substrate-less blue LED structure include:
a GaN layer;
and an InGaN layer grown on the GaN layer.
As another aspect of the present invention, there is also provided a micro led three primary color light emitting array, comprising:
a plurality of the above-mentioned micro led three-primary-color light emitting structures arranged in a matrix;
wherein, each of the micro LED three-primary-color light-emitting structures is respectively connected with an extraction electrode Vdd, a grounding electrode GND and a gating electrode VselectData electrode Vdata-RData electrode Vdata-GAnd a data electrode Vdata-BElectrically connecting; the extraction electrode Vdd is connected with the substrate-free high-temperature polycrystalline silicon-thin film transistor structure; the grounding electrode GND is grounded; the above-mentioned gate electrode VselectThe P-electrode is connected to the anode of the substrate-free red light OLED structure, the P-electrode of the substrate-free green light LED structure and the P-electrode of the substrate-free blue light LED structure;
wherein, the gating electrode V of each micro LED three-primary-color light-emitting structureselectThe electrodes are interconnected to form a scanning line of the array; the data electrode V of each micro LED three-primary-color light-emitting structuredata-RData electrode Vdata-GAnd a data electrode Vdata-BThe electrodes are interconnected to form a data line of the array; the Vdd electrodes of the leading-out electrodes of each micro LED three-primary-color light-emitting structure are interconnected to form leading-out wires of an array; the scanning line is connected with a power supply, and the outgoing line and the data line are connected with peripheral signals to realize image display.
As another aspect of the present invention, a preparation method of a micro led three-primary-color light emitting structure is also provided, where the preparation method is used to prepare the micro led three-primary-color light emitting structure, and includes:
manufacturing the substrate-free high-temperature polycrystalline silicon-thin film transistor structure;
manufacturing the substrate-free red light OLED structure;
manufacturing the substrate-free green light LED structure;
manufacturing the substrate-free blue LED structure;
and arranging the substrate-free high-temperature polycrystalline silicon-thin film transistor structure, the substrate-free red light OLED structure, the substrate-free green light LED structure and the substrate-free blue light LED structure on the display substrate.
According to an embodiment of the present invention, the method for manufacturing a substrate high temperature polysilicon-thin film transistor structure includes:
preparing a GaN layer on a sapphire substrate;
depositing SiO on the GaN layer2A distributed Bragg reflector layer;
in the above SiO2Preparing a high-temperature polycrystalline silicon-thin film transistor layer on the distributed Bragg reflector layer;
etching the high-temperature polysilicon-thin film transistor layer and the SiO layer on the sapphire substrate by inductively coupled plasma2The distributed Bragg reflector layer and the GaN layer are etched layer by layer to be etched on the sapphire substrate to form a plurality of discrete high-temperature polycrystalline silicon-thin film transistor structures;
irradiating the separated high-temperature polysilicon-thin film transistor structure from the other surface of the sapphire substrate by laser to decompose the GaN layer at the interface;
and stripping the high-temperature polycrystalline silicon-thin film transistor structure from the sapphire substrate by transferring an adhesive film.
According to an embodiment of the invention, the method for manufacturing the substrate-free red OLED structure comprises the following steps:
preparing a GaN layer on a sapphire substrate;
depositing SiO on the GaN layer2A layer;
etching the SiO on the sapphire substrate by inductively coupled plasma2Etching the layer and the GaN layer by layer to the sapphire substrate to form multiple discrete SiO layers2A layer and the GaN layer mesa;
in the above SiO separated2Depositing transparent electrode layer on the layer and the GaN layer mesa, and photoetching to obtain the above-mentioned SiO layer2A substrate with a transparent electrode layer attached on the layer and the GaN layer mesa;
depositing an organic functional layer on the transparent electrode layer of the substrate by an OLED material evaporation system;
depositing a cathode metal layer on the organic functional layer of the substrate by an OLED material evaporation system;
coating the deposited substrate with a sealant through a glove box to obtain a cured substrate;
etching the cured sealant on the substrate to obtain a discrete red light OLED structure, and exposing two electrodes which are the anode and the cathode of the red light OLED structure;
irradiating the red OLED structure with laser light from the other surface of the sapphire substrate to decompose the GaN layer at the interface;
and stripping the red OLED structure from the sapphire substrate by transferring an adhesive film.
According to the embodiment of the invention, the method for manufacturing the substrate-free green LED structure and the substrate-free blue LED structure comprises the following steps:
preparing a GaN layer on a sapphire substrate;
preparing a green LED structure on the GaN layer by an InGaN LED process with a flip-chip structure;
preparing a blue light LED structure on the GaN layer through an InGaN LED process with a flip structure;
decomposing the GaN layer at the interface by irradiating the green LED structure and the blue LED structure with laser light from the other surface of the sapphire substrate;
and stripping the green light LED structure and the blue light LED structure from the sapphire substrate by transferring an adhesive film.
As another aspect of the present invention, a method for preparing a micro led three-primary-color light emitting array is also provided, where the method for preparing the micro led three-primary-color light emitting array includes:
arranging a plurality of micro LED three-primary-color light-emitting structures prepared by the preparation method of the light-emitting structure according to a matrix form;
wherein, each of the micro LED three-primary-color light-emitting structures is respectively connected with an extraction electrode Vdd, a grounding electrode GND and a gating electrode VselectData electrode Vdata-RData electrode Vdata-GAnd a data electrode Vdata-BElectrically connecting; the extraction electrode Vdd is connected with the substrate-free high-temperature polycrystalline silicon-thin film transistor structure; the grounding electrode GND is grounded; the above-mentioned gate electrode VselectThe P-electrode is connected to the anode of the substrate-free red light OLED structure, the P-electrode of the substrate-free green light LED structure and the P-electrode of the substrate-free blue light LED structure;
evaporating and photoetching the metal electrode to form the gating electrode V of each micro LED three-primary-color light-emitting structureselectThe electrodes are interconnected to form a scanning line of the array; the data electrode V of each micro LED three-primary-color light-emitting structuredata-RData electrode Vdata-GAnd a data electrode Vdata-BThe electrodes are interconnected to form a data line of the array; the Vdd electrodes of the leading-out electrodes of each micro LED three-primary-color light-emitting structure are interconnected to form leading-out wires of an array; the scanning line is connected with a power supply, and the outgoing line and the data line are connected with peripheral signals to realize image display.
Based on the technical scheme, compared with the prior art, the micro LED three-primary-color light-emitting structure has at least one of the following beneficial effects:
1. according to the micro LED three-primary-color light emitting structure provided by the embodiment of the invention, a substrate-free red OLED structure prepared from a phosphorescent material is used for replacing an AlGaInP red LED structure, so that the light emitting efficiency of a red microchip structure is further improved. In the three-primary-color display technology, the red light luminous efficiency can be better matched with blue and green chips, the power consumption is reduced, the chip area is reduced, the dot spacing is reduced, and the resolution of a display screen is improved;
2. the micro LED three-primary-color light-emitting structure provided by the embodiment of the invention utilizes the active drive technology of a high-temperature polysilicon-thin film transistor structure to improve the mobility to 400cm2Over Vs, the size of the driving chip can be further reduced, the dot pitch of the display screen can be reduced, and the resolution of the display screen can be improved;
3. according to the micro LED three-primary-color light-emitting structure provided by the embodiment of the invention, the high-temperature polycrystalline silicon-thin film transistor structure, the red light OLED structure, the green light LED structure and the blue light LED structure of the strippable substrate are formed by the GaN layer on the sapphire substrate, so that the mechanical damage and the size limitation caused by the traditional cutting process are avoided, the chip size can be further reduced, and the resolution of a display screen is improved;
4. the micro LED three-primary-color light emitting array provided by the embodiment of the invention comprises a micro LED three-primary-color light emitting structure consisting of a plurality of substrate-free high-temperature polycrystalline silicon-thin film transistor structures, substrate-free red light OLED structures, substrate-free green light LED structures and substrate-free blue light LED structures, wherein the discrete light emitting structures are tested and screened before screen assembly, and the micro LED three-primary-color light emitting array has the advantages of less dead points, less defects, high quality, no repair and low cost in the whole screen.
Drawings
FIG. 1 schematically shows a schematic diagram of a MicroLED three-primary-color light-emitting structure provided by an embodiment of the invention;
FIG. 2 schematically shows a flowchart of a method for manufacturing a MicroLED three-primary-color light-emitting structure according to another embodiment of the present invention;
fig. 3 schematically shows a flowchart of a method for manufacturing a substrate-free high-temperature polysilicon-thin film transistor structure in a micro led three-primary-color light emitting structure according to an embodiment of the present invention;
FIG. 4 is a schematic diagram illustrating a high-temperature polysilicon-thin film transistor structure in a MicroLED three-primary-color light emitting structure provided by an embodiment of the present invention;
FIG. 5 schematically shows a flowchart of a method for manufacturing a substrate-free red OLED structure in a MicroLED three-primary-color light emitting structure according to an embodiment of the present invention;
FIG. 6 is a schematic diagram illustrating a red OLED in a MicroLED three-primary-color light emitting structure according to an embodiment of the present invention;
FIG. 7 schematically shows a structural schematic diagram of a red OLED after sealant etching in a MicroLED three-primary-color light-emitting structure provided by an embodiment of the invention;
FIG. 8 is a flow chart schematically illustrating a method for manufacturing a substrate-free green LED structure and a substrate-free blue LED structure in a MicroLED three-primary-color light-emitting structure according to an embodiment of the present invention;
FIG. 9 is a flow chart of a method for manufacturing a MicroLED three-primary-color light emitting array according to another embodiment of the present invention;
FIG. 10 is a schematic diagram illustrating a structure of a MicroLED three-primary-color light emitting array according to another embodiment of the present invention;
description of reference numerals:
1-a sapphire substrate; 2-GaN; 3-SiO2A distributed Bragg reflector; 41-high temperature polysilicon; 42-thin film transistors; 5-a transparent electrode layer; 6-an organic functional layer; 7-a cathode metal layer; 8-sealing glue; 9-substrate-free high-temperature polycrystalline silicon-thin film transistor structure; 10-substrate free red OLED structure; 11-substrate-free green LED structure; 12-substrate-free blue LED structure; 13-display substrate.
Detailed Description
In order that the objects, technical solutions and advantages of the present invention will become more apparent, the present invention will be further described in detail with reference to the accompanying drawings in conjunction with the following specific embodiments.
The invention is based on the problems in the prior art, and combines with the progress of red OLED material research in recent years, the OLED red phosphorescent material theoretically has the internal quantum efficiency of 100 percent, and the luminous efficiency of the red OLED under small size can still maintain a higher level (less interface state), so that the OLED small-size red light has great potential for replacing an AlGaInP red light LED; the electron mobility of the high-temperature polycrystalline silicon-thin film transistor can reach 400cm2and/Vs, has greater value for high-resolution display screen applications.
The invention provides a micro LED (light emitting diode) three-primary-color light emitting structure and a preparation method thereof, and relates to the technical field of photoelectric display. The light emitting structure includes: a display substrate; a substrate-free high temperature polysilicon-thin film transistor structure located on the display substrate; the substrate-free red light OLED structure is positioned on the display substrate, is connected with the substrate-free high-temperature polycrystalline silicon-thin film transistor structure and comprises an anode and a cathode; the substrate-free green light LED structure is positioned on the display substrate, is connected with the substrate-free high-temperature polycrystalline silicon-thin film transistor structure and comprises a P electrode and an N electrode; the substrate-free blue LED structure positioned on the display substrate is connected with the substrate-free high-temperature polycrystalline silicon-thin film transistor structure and comprises a P electrode and an N electrode. According to the invention, the high-temperature polycrystalline silicon-thin film transistor structure, the red OLED structure, the green LED structure and the blue LED structure of the strippable substrate are formed through the GaN layer on the sapphire substrate, so that the mechanical damage and the size limitation brought by the traditional cutting process are avoided, and the size of the chip can be further reduced; the red OLED structure is used for replacing an AlGaInP red LED structure, so that the luminous efficiency can be improved, the red luminous efficiency is more matched with blue and green chips, the power consumption is reduced, the chip area is reduced, the dot spacing is reduced, and the resolution of the display screen is improved; the high-temperature polycrystalline silicon-thin film transistor structure is used for driving, so that the carrier mobility can be improved; the micro LED three-primary-color light emitting structure with higher resolution is composed of a display substrate, a substrate-free high-temperature polycrystalline silicon-thin film transistor structure, a substrate-free red light OLED structure, a substrate-free green light LED structure and a substrate-free blue light LED structure, so that the light emitting efficiency can be improved, and the energy consumption can be reduced.
In order to make the objects, technical solutions and advantages of the present invention more apparent, the following detailed description is further described with reference to the accompanying drawings in conjunction with the specific embodiments.
In the following description, specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be embodied in many different forms other than those described herein, and it will be apparent to those skilled in the art that the present invention may be embodied in many different forms without departing from the spirit or scope of the present invention. The invention is therefore not limited to the specific implementations provided below.
Fig. 1 schematically shows a schematic diagram of a micro led three-primary-color light emitting structure provided by an embodiment of the present invention.
As shown in fig. 1, the micro led three-primary-color light emitting structure provided by the embodiment of the present invention includes:
a display substrate 13;
a substrate-less high temperature polysilicon-thin film transistor structure 9 on the display substrate 13;
the substrate-free red light OLED structure 10 is positioned on the display substrate 13, is connected with the substrate-free high-temperature polycrystalline silicon-thin film transistor structure 9 and comprises an anode and a cathode;
the substrate-free green light LED structure 11 is positioned on the display substrate 13, is connected with the substrate-free high-temperature polycrystalline silicon-thin film transistor structure 9 and comprises a P electrode and an N electrode;
the substrate-free blue LED structure 12 located on the display substrate 13 is connected with the substrate-free high-temperature polycrystalline silicon-thin film transistor structure 9 and comprises a P electrode and an N electrode.
Fig. 2 schematically shows a flowchart of a method for preparing a micro led three-primary-color light emitting structure according to an embodiment of the present invention.
As shown in fig. 2, a method for preparing a micro led three-primary-color light emitting structure provided by the embodiment of the present invention includes:
step S201: and manufacturing the substrate-free high-temperature polycrystalline silicon-thin film transistor structure 9.
Step S202: the substrate-less red OLED structure 10 is fabricated.
Step S203: and manufacturing the substrate-free green LED structure 11.
Step S204: the substrate-less blue LED structure 12 is fabricated.
Step S205: the substrate-free high-temperature polycrystalline silicon-thin film transistor structure 9, the substrate-free red OLED structure 10, the substrate-free green LED structure 11 and the substrate-free blue LED structure 12 are arranged on the display substrate 13.
Fig. 3 schematically shows a flowchart of a method for manufacturing a substrate-free high-temperature polysilicon-thin film transistor structure in a micro led three-primary-color light emitting structure according to an embodiment of the present invention.
Fig. 4 schematically shows a structural schematic diagram of a high-temperature polysilicon-thin film transistor in a micro led three-primary-color light emitting structure provided by an embodiment of the invention.
Referring to fig. 3 and 4, a method for manufacturing a substrate-free high-temperature polysilicon-thin film transistor structure in a three primary color light emitting structure of a micro led according to an embodiment of the present invention may include the following steps.
Step S301: a GaN layer 2 is grown on a sapphire substrate 1 by a Metal Organic Chemical Vapor Deposition (MOCVD) process, and the thickness of the film is 2-7 um.
According to the embodiment of the invention, the GaN layer 2 can be decomposed by laser, and when the sapphire substrate is subsequently stripped, the GaN layer 2 can be decomposed by laser to achieve the purpose of substrate stripping.
Step S302: depositing SiO on the GaN layer 2 by Plasma Enhanced Chemical Vapor Deposition (PECVD)2The/distributed Bragg reflector layer 3 is 0.5-2um in film thickness.
According to an embodiment of the invention, SiO2The function of the distributed Bragg reflector is electrical isolation and electrical insulation, and the function of the distributed Bragg reflector is to eliminate the interference of LED light emission on the TFT.
Step S303: in the above SiO2The high-temperature polysilicon 41 grows on the distributed Bragg reflector 3, a metal film layer is deposited, the thin film transistor 42 is formed through the processes of ion implantation, etching, photoetching corrosion and the like, and a 2T1C driving circuit is formed.
According to an embodiment of the present invention, High Temperature Poly-Silicon (HTPS), which is a transmissive LCD of an active matrix driving method, is abbreviated.
Step S304: and etching the film layer by layer on the sapphire substrate 1 by adopting an Inductively Coupled Plasma (ICP) etching process to etch the film layer to the sapphire substrate 1, and forming a plurality of discrete high-temperature polycrystalline silicon-thin film transistor structures 9 on the sapphire substrate 1.
According to the embodiment of the invention, the mobility is improved to 400cm by using the active driving technology of the substrate-free high-temperature polycrystalline silicon-thin film transistor structure 92And the size of the driving chip can be further reduced, the dot pitch of the display screen can be further reduced, and the resolution of the display screen can be improved.
Step S305: the above-mentioned discrete high-temperature polysilicon-thin film transistor structure 9 is irradiated with laser light from the other side of the sapphire substrate 1, and the laser light decomposes the GaN layer 2 through the sapphire substrate 1.
Step S306: the high temperature poly-si-tft structure 9 is removed by transferring the glue film.
According to the embodiment of the invention, the substrate-free high-temperature polycrystalline silicon-thin film transistor structure 9 is formed through the GaN layer 2 on the sapphire substrate 1, so that the mechanical damage and the size limitation caused by the traditional cutting process are avoided, the size of a driving chip can be further reduced, the dot spacing of a display screen is reduced, and the resolution of the display screen is improved.
Fig. 5 schematically shows a flowchart of a method for manufacturing a substrate-free red OLED structure in a micro led three-primary-color light emitting structure according to an embodiment of the present invention.
Fig. 6 schematically shows a structural schematic diagram of a red OLED in a micro led three-primary-color light emitting structure provided by an embodiment of the present invention.
Fig. 7 schematically shows a structural schematic diagram of a red OLED after sealant etching in a micro led three-primary-color light emitting structure provided by an embodiment of the invention.
With reference to fig. 5 to 7, a method for manufacturing a substrate-free red OLED structure in a micro led three-primary-color light emitting structure according to an embodiment of the present invention may include the following steps.
Step S501: and growing a GaN layer 2 on the sapphire substrate 1 by adopting a Metal Organic Chemical Vapor Deposition (MOCVD) process, wherein the thickness of the layer is 2-7 um.
According to the embodiment of the invention, the GaN layer 2 can be decomposed by laser, and when the sapphire substrate 1 is subsequently stripped, the GaN layer 2 can be decomposed by laser to achieve the purpose of stripping the substrate.
Step S502: depositing SiO on the GaN layer 2 by Plasma Enhanced Chemical Vapor Deposition (PECVD)2Layer 3, layer thickness 0.5-2 um.
According to an embodiment of the invention, SiO2The function of (a) is electrical isolation and electrical insulation.
Step S503: applying Inductively Coupled Plasma (ICP) etching process to GaN layer 2 and SiO on sapphire substrate 12The layer 3 is etched onto the sapphire substrate 1 to form a plurality of discrete structures on the sapphire substrate 1.
Step S504: depositing a transparent electrode layer 5(ITO) on the substrate, wherein the film thickness is 0.1-0.5 um, and carrying out photoetching corrosion on the substrate to ensure that the transparent electrode layer 5(ITO) is attached to the discrete structure, and the transparent electrode layer 5(ITO) is used as the anode of the red OLED structure.
Step S505: and (3) conveying the substrate into an OLED material evaporation system, and depositing an organic functional layer 6 by using a mask.
Step S506: and (3) conveying the substrate into an OLED material evaporation system, and depositing a cathode metal layer 7 by using a mask to form a plurality of separated red OLED structures.
According to the embodiment of the invention, the red OLED structure prepared by the phosphorescent material replaces an AlGaInP red LED structure, so that the luminous efficiency of the red microchip structure is further improved, the luminous efficiency of red light is more matched with blue and green chips in three-primary-color display, the power consumption is reduced, the chip area is reduced, the dot pitch is further reduced, and the resolution of the display screen is improved.
Step S507: and (3) introducing the substrate into a glove box filled with nitrogen with the purity of 99.99% to carry out a sealant 8 coating process, and after the sealant 8 is cured, delivering the substrate out of the glove box.
Step S508: and etching the sealant on the substrate to ensure that the packaging adhesive only protects the separated red light OLED structure, and the two ITO electrodes are exposed and respectively serve as the anode and the cathode of the red light OLED microchip.
Step S509: and irradiating the red OLED structure of the substrate from the other side of the sapphire substrate 1 by using laser, wherein the laser penetrates through the sapphire substrate to decompose the GaN layer 2.
Step S510: the red OLED structure 10 was removed from the sapphire substrate by transferring the glue film to form the red OLED structure 10 with GaN epitaxial layer support.
According to the embodiment of the invention, the substrate-free red OLED structure 10 is formed through the GaN layer 2 on the sapphire substrate 1, so that the mechanical damage and size limitation caused by the traditional cutting process are avoided, the size of a driving chip can be further reduced, the dot pitch of a display screen is reduced, and the resolution of the display screen is improved.
Fig. 8 schematically shows a flowchart of a method for manufacturing a substrate-free green LED structure and a substrate-free blue LED structure in a micro LED three-primary-color light emitting structure according to an embodiment of the present invention.
As shown in fig. 8, a method for manufacturing a substrate-free green LED structure and a substrate-free blue LED structure in a micro LED three-primary color light emitting structure provided by an embodiment of the present invention may include the following steps.
Step S801: and growing a GaN layer 2 on the sapphire substrate 1 by adopting a Metal Organic Chemical Vapor Deposition (MOCVD) process, wherein the thickness of the layer is 2-7 um.
According to the embodiment of the invention, the GaN layer 2 can be decomposed by laser, and when the sapphire substrate 1 is subsequently stripped, the GaN layer 2 can be decomposed by laser to achieve the purpose of stripping the substrate.
Step S802: and preparing a green light LED structure and a blue light LED structure on the sapphire substrate 1 by adopting an InGaN LED process with a flip-chip structure.
Step S803: and irradiating the green light LED structure and the blue light LED structure of the substrate by laser from the other surface of the sapphire substrate 1, wherein the laser penetrates through the sapphire substrate to decompose the GaN layer 2 at the section.
Step S804: the substrate-less green LED structure 11 and the substrate-less blue LED structure 12 are removed by transferring the adhesive film.
According to the embodiment of the invention, the substrate-free green LED structure 11 and the substrate-free blue LED structure 12 are formed through the GaN layer 2 on the sapphire substrate 1, so that mechanical damage and size limitation caused by a traditional cutting process are avoided, the size of a driving chip can be further reduced, the dot pitch of a display screen is reduced, and the resolution of the display screen is improved.
FIG. 9 is a flow chart of a method for manufacturing a micro LED three-primary-color light emitting array according to another embodiment of the invention.
Fig. 10 schematically shows a schematic structural diagram of a micro led three-primary-color light emitting array according to another embodiment of the present invention.
Referring to fig. 9 and 10, a method for manufacturing a micro led three-primary-color light emitting array according to another embodiment of the present invention may include the following steps.
Step S901: on a display substrate 13, a substrate-free high-temperature polycrystalline silicon-thin film transistor structure 9, a substrate-free red light OLED structure 10, a substrate-free green light LED microchip 11 and a substrate-free blue light LED microchip 12 are sequentially transferred and arranged according to set positions to form a micro LED three-primary-color light emitting structure, the substrate-free high-temperature polycrystalline silicon-thin film transistor structure 9 drives the substrate-free red light OLED structure 10, the substrate-free green light LED microchip 11 and the substrate-free blue light LED microchip 12, and six electrode interconnection processes such as metal evaporation, photoetching corrosion and the like are performed to form sixElectrode extraction electrodes, respectively Vdd electrode, GND ground electrode, and VselectGate electrode and Vdata-R、Vdata-G、Vdata-BAnd a data electrode in which a plurality of light emitting structures are arranged in a matrix form.
Step S902: and carrying out electrode interconnection processes such as metal evaporation, photoetching corrosion and the like on six leading-out electrodes of each light-emitting structure on the whole screen to form scanning lines, data lines and electrode leading-out wires of the whole screen, leading out the scanning lines, the data lines and the electrode leading-out wires to the edge of a display array, and connecting peripheral signals and a power supply to realize image display.
According to the embodiment of the invention, the micro LED three-primary-color light emitting array comprises a micro LED three-primary-color light emitting array consisting of a plurality of light emitting structures, and each light emitting structure is tested and screened before screen assembly, so that the whole screen has less dead points, less defects, high quality, no repair and low cost.
The above embodiments are provided to further explain the objects, technical solutions and advantages of the present invention in detail, and it should be understood that the above embodiments are only examples of the present invention and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A micro LED three primary colors light emitting structure, comprising:
a display substrate;
a substrate-free high temperature polysilicon-thin film transistor structure located on the display substrate;
the substrate-free red OLED structure is positioned on the display substrate, is connected with the high-temperature polycrystalline silicon-thin film transistor structure and comprises an anode and a cathode;
the substrate-free green light LED structure is positioned on the display substrate, is connected with the high-temperature polycrystalline silicon-thin film transistor structure and comprises a P electrode and an N electrode;
the substrate-free blue LED structure positioned on the display substrate is connected with the high-temperature polycrystalline silicon-thin film transistor structure and comprises a P electrode and an N electrode.
2. The light emitting structure of claim 1, the substrate-less high temperature poly-si-thin film transistor structure comprising:
a GaN layer;
SiO2a distributed Bragg reflector layer deposited on the GaN layer;
a high temperature polysilicon-thin film transistor layer grown on the SiO2On the/DBR mirror layer.
3. The light emitting structure according to claim 1 or 2, the substrate-less red OLED structure comprising:
a GaN layer;
SiO2a layer deposited on the GaN layer;
a transparent electrode layer deposited on the SiO2On the layer;
an organic functional layer deposited on the transparent electrode layer;
a cathode metal layer deposited on the organic functional layer;
and the sealing adhesive layer is coated on the cathode metal layer.
4. The light emitting structure according to one of claims 1-3, the substrate-less green LED structure and the substrate-less blue LED structure comprising:
a GaN layer;
an InGaN layer grown on the GaN layer.
5. A micro led tri-phosphor light emitting array comprising:
a plurality of micro led tri-phosphor light emitting structures according to claim 1 arranged in a matrix;
each micro LED three-primary-color light-emitting structure is respectively connected with an extraction electrode Vdd, a grounding electrode GND and a gating electrode VselectData electrode Vdata-RData electrode Vdata-GAnd a data electrode Vdata-BElectrically connecting; the lead-out electrode Vdd is connected with the substrate-free high-temperature polycrystalline silicon-thin film transistor structure; the grounding electrode GND is grounded; the gate electrode VselectA P electrode connected to the anode of the substrate-less red OLED structure, the P electrode of the substrate-less green LED structure, and the P electrode of the substrate-less blue LED structure;
wherein the gating electrode V of each MicroLED three-primary-color light-emitting structureselectThe electrodes are interconnected to form a scanning line of the array; the data electrode V of each MicroLED three-primary-color light-emitting structuredata-RData electrode Vdata-GAnd a data electrode Vdata-BThe electrodes are interconnected to form a data line of the array; the Vdd electrodes of the leading-out electrodes of the MicroLED three-primary-color light-emitting structures are interconnected to form leading-out wires of an array; the scanning line is connected with a power supply, and the outgoing line and the data line are connected with peripheral signals to realize image display.
6. A preparation method of a micro LED three-primary-color light-emitting structure comprises the following steps:
manufacturing the substrate-free high-temperature polycrystalline silicon-thin film transistor structure;
manufacturing the substrate-free red light OLED structure;
manufacturing the substrate-free green light LED structure;
manufacturing the substrate-free blue LED structure;
and arranging the substrate-free high-temperature polycrystalline silicon-thin film transistor structure, the substrate-free red light OLED structure, the substrate-free green light LED structure and the substrate-free blue light LED structure on the display substrate.
7. The method for preparing a light emitting structure according to claim 6, wherein the method for manufacturing the substrate-free high temperature polysilicon-thin film transistor structure comprises the following steps:
preparing a GaN layer on a sapphire substrate;
depositing SiO on the GaN layer2A distributed Bragg reflector layer;
in the SiO2Preparing a high-temperature polycrystalline silicon-thin film transistor layer on the distributed Bragg reflector layer;
etching the sapphire substrate by inductively coupled plasmaHigh temperature polysilicon-thin film transistor layer, the SiO2The distributed Bragg reflector layer and the GaN layer are etched layer by layer to be etched on the sapphire substrate to form a plurality of discrete high-temperature polycrystalline silicon-thin film transistor structures;
irradiating the discrete high-temperature polysilicon-thin film transistor structure from the other surface of the sapphire substrate by laser to decompose the GaN layer at the interface;
and stripping the high-temperature polycrystalline silicon-thin film transistor structure from the sapphire substrate through a transfer adhesive film.
8. The method of manufacturing a light emitting structure according to claim 6 or 7, the method of fabricating a substrate-less red OLED structure comprising:
preparing a GaN layer on a sapphire substrate;
depositing SiO on the GaN layer2A layer;
etching the SiO on the sapphire substrate by an inductively coupled plasma etching process2Etching the layer and the GaN layer by layer to the sapphire substrate to form a plurality of discrete SiO layers2A layer and the GaN layer mesa;
in the discrete SiO2Depositing transparent electrode layers on the layer and the GaN layer mesa, and obtaining the discrete SiO by photoetching and etching process2A substrate with a transparent electrode layer attached to the layer and the GaN layer mesa;
depositing an organic functional layer on the transparent electrode layer of the substrate by an OLED material evaporation system;
depositing a cathode metal layer on the organic functional layer of the substrate by the OLED material evaporation system;
coating the deposited substrate with a sealant through a glove box to obtain a cured substrate;
etching the cured sealant on the substrate to obtain a discrete red light OLED structure, and exposing two electrodes which are the anode and the cathode of the red light OLED structure;
irradiating the red OLED structure from the other side of the sapphire substrate by laser to decompose the GaN layer at the interface;
and stripping the red OLED structure from the sapphire substrate through a transfer adhesive film.
9. The method for preparing a light emitting structure according to one of claims 6 to 8, the method for fabricating the substrate-less green LED structure and the substrate-less blue LED structure comprising:
preparing a GaN layer on a sapphire substrate;
preparing a green LED structure on the GaN layer through an InGaN LED process with a flip-chip structure;
preparing a blue light LED structure on the GaN layer through an InGaN LED process with a flip-chip structure;
decomposing the GaN layer at the interface by irradiating the green LED structure and the blue LED structure with laser light from the other side of the sapphire substrate;
and stripping the green light LED structure and the blue light LED structure from the sapphire substrate by transferring an adhesive film.
10. A preparation method of a micro LED three-primary-color light emitting array comprises the following steps:
arranging a plurality of MicroLED three-primary-color light-emitting structures prepared by the preparation method of the light-emitting structure according to claim 6 in a matrix form;
each micro LED three-primary-color light-emitting structure is respectively connected with an extraction electrode Vdd, a grounding electrode GND and a gating electrode VselectData electrode Vdata-RData electrode Vdata-GAnd a data electrode Vdata-BElectrically connecting; the lead-out electrode Vdd is connected with the substrate-free high-temperature polycrystalline silicon-thin film transistor structure; the grounding electrode GND is grounded; the gate electrode VselectA P electrode connected to the anode of the substrate-less red OLED structure, the P electrode of the substrate-less green LED structure, and the P electrode of the substrate-less blue LED structure;
by evaporation of metal electrodes and lightEtching and corroding the gating electrode V of each micro LED three-primary-color light-emitting structureselectThe electrodes are interconnected to form a scanning line of the array; the data electrode V of each MicroLED three-primary-color light-emitting structuredata-RData electrode Vdata-GAnd a data electrode Vdata-BThe electrodes are interconnected to form a data line of the array; the Vdd electrodes of the leading-out electrodes of the MicroLED three-primary-color light-emitting structures are interconnected to form leading-out wires of an array; the scanning line is connected with a power supply, and the outgoing line and the data line are connected with peripheral signals to realize image display.
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| US11721786B2 (en) * | 2019-06-27 | 2023-08-08 | Intel Corporation | Micro light-emitting diode displays having color correction films applied thereto |
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