CN113921357B - Strong current diode and gradient magnetic field device based on gradient magnetic field - Google Patents
Strong current diode and gradient magnetic field device based on gradient magnetic field Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
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- H01J21/18—Tubes with a single discharge path having magnetic control means; having both magnetic and electrostatic control means
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Abstract
The application discloses a gradient magnetic field device, which comprises a guiding magnetic field for guiding the transmission of a strong current relativity electron beam; the guiding magnetic field includes a solenoid coil; a solenoid coil wound around the high-current diode for forming a gradient magnetic field for radially deflecting the high-current relativistic electron beam, including a first sub-coil, a second sub-coil, and a third sub-coil; the first sub-coil is wound on the outer side of the anode of the high-current diode, the second sub-coil is wound on the outer side of the outer conductor of the high-current diode, and the third sub-coil is wound on the outer side of the second sub-coil; the guiding magnetic field further comprises adjusting the magnetic field; the adjusting magnetic field is fixedly arranged between the first sub-coil and the second sub-coil and is wound around the high-current diode and used for adjusting the speed of the radial change of the high-current relativity electron beam. The application also discloses a high-current diode based on the gradient magnetic field, which comprises a gradient magnetic field device. The application can solve the problem that the size of the high-impedance diode is difficult to shrink.
Description
Technical Field
The application relates to the technical field of high-power microwaves, in particular to a high-current diode based on a gradient magnetic field and a gradient magnetic field device.
Background
High power microwaves (High Power Microwave, HPM for short) generally refer to electromagnetic waves with peak power greater than 100MW and frequencies between 1 and 300 GHz. The high-power microwave source is a core component of a high-power microwave system, and performs beam-wave interaction between a high-frequency electromagnetic structure and a high-frequency electromagnetic structure through a strong-current relativity Electron beam (INTENSE RELATIVISTIC Electron Beams, abbreviated as IREB) generated by diode cathode explosion emission, so that the kinetic energy of the IREB is converted into microwave energy. Thus, the IREB-producing diode is one of the vital components in the HPM system.
The pursuit of higher power, higher frequency, higher efficiency microwave output has always been an important development goal in the HPM technology field. With the improvement of the working frequency of the device, the radius of the traditional single-mode HPM source is gradually reduced, the power capacity of the device is greatly reduced, and finally, the single-mode HPM source in a high frequency band is difficult to realize high-power microwave output. In order to increase the power capacity of the high-frequency band HPM source and improve the microwave output power, a large-radius overmode structure or a coaxial structure is often adopted. The large radius overmode structure increases the power capacity of the HPM source by adopting a larger drift tube center radius and IREB center radius; the coaxial structure reduces potential energy of IREB and improves space charge limit current by introducing a coaxial inner conductor. However, as the center radius of the drift tube and the center radius of the IREB increase, the ability of the cathode of a conventional high current diode to emit IREB increases rapidly and the diode resistance decreases. The working impedance of the HPM source decreases such that the space charge effect is enhanced, resulting in lower beam-to-wave conversion efficiency of the HPM source and a stronger external guiding magnetic field required.
In the prior art, the coaxial over-mode HPM source generally adopts a mode of increasing the distance between the cathode and the anode of the diode (increasing the radius of the anode of the diode) to increase the impedance of the diode so as to weaken the space charge effect and improve the beam-wave conversion efficiency. Since the size of the coaxial over-mode HPM source is determined by the diode size, the increase of the diode cathode-anode distance further increases the size of the coaxial over-mode HPM source, so that the volume of the external guiding magnetic field and the energy consumption are increased, which is contradictory to the requirement of miniaturization of the HPM source; meanwhile, the increase of the distance between the cathode and the anode of the diode can lead to weakening of the emitted electric field at the cathode, which is unfavorable for uniform emission of IREB.
In summary, in order to meet the requirements of high frequency, high power, high efficiency and miniaturization of HPM sources, high-frequency HPM sources can use large-radius overmode structures and coaxial structures to ensure higher output power, and the contradiction between high impedance and miniaturization is high.
Disclosure of Invention
In view of the above, it is desirable to provide a high-current diode and a gradient magnetic field device based on a gradient magnetic field, which can solve the problem that the size of a high-impedance diode is difficult to reduce.
A gradient magnetic field device, comprising: a guiding magnetic field for guiding the strong current relativistic electron beam transmission;
the guiding magnetic field comprises: a solenoid coil;
the solenoid coil is wound around the high current diode for forming a gradient magnetic field that radially deflects the high current relativistic electron beam.
In one embodiment, the solenoid coil includes a plurality of sub-coils, each of which is of annular configuration.
In one embodiment, the solenoid coil includes a first sub-coil, a second sub-coil, and a third sub-coil;
The first sub-coil is wound on the outer side of the diode anode, the second sub-coil is wound on the outer side of the outer conductor of the high-current diode, and the third sub-coil is wound on the outer side of the second sub-coil.
In one embodiment, the guiding magnetic field further comprises: an adjustment structure;
The adjusting structure is fixedly arranged between the first sub-coil and the second sub-coil and wound around the high-current diode, and is fixedly arranged in a ring shape so as to be used for forming an adjusting magnetic field for adjusting the radius change speed of the high-current relativity electron beam.
In one embodiment, the material of the adjusting structure is neodymium iron boron with high remanence.
In one embodiment, the solenoid coil and the adjustment structure are both secured using flanges.
A gradient magnetic field based high current diode comprising: gradient magnetic field device.
In one embodiment, the method further comprises: a diode cathode, a cathode emitter, a diode anode, an inner conductor, an outer conductor, and a drift tube.
In one embodiment, the cathode emitter is immersed in the first sub-coil and is offset to the right in the axial direction thereof.
In one embodiment, the cathode emitter uses a low emission threshold material.
The gradient magnetic field device provides enough magnetic field intensity through the guiding magnetic field arranged around the high-current diode, and forms a gradient magnetic field for radially deflecting the high-current relativistic electron beam, so that the radius of the high-current relativistic electron beam is increased, the high-current relativistic electron beam is emitted by a cathode emitter with a small radius and is transmitted into a drift tube with a large radius, and the size of the high-impedance diode can be reduced.
Drawings
FIG. 1 is a schematic diagram of a gradient magnetic field device in one embodiment;
FIG. 2 is a schematic diagram of a gradient magnetic field based high current diode in one embodiment;
FIG. 3 is a schematic diagram of a gradient magnetic field-based high-current diode and gradient magnetic field device in one embodiment;
FIG. 4 is a schematic diagram showing the relative positions of cathode emitters of a high current diode in one embodiment;
FIG. 5 is an axial and radial magnetic field profile at a radius of 60mm in one embodiment;
FIG. 6 is a trace diagram of IREB produced in one embodiment.
Figure number:
the cathode structure comprises a diode cathode 1, a cathode base 11, a ring structure 12, a cathode emitter 2, a diode anode 3, an inner conductor 4, an inner conductor transition section 41, an inner conductor constant section 42, an outer conductor 5, an outer conductor transition section 51, an outer conductor constant section 52, a drift tube 6, a solenoid coil 7, a first sub-coil 71, a second sub-coil 72, a third sub-coil 73 and a regulating structure 8.
Detailed Description
The present application will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present application more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
It should be noted that all directional indicators (such as up, down, left, right, front, and rear … …) in the embodiments of the present application are merely used to explain the relative positional relationship, movement, etc. between the components in a particular posture (as shown in the drawings), and if the particular posture is changed, the directional indicator is changed accordingly.
Furthermore, descriptions such as those referred to as "first," "second," and the like, are provided for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implying an order of magnitude of the indicated technical features in the present disclosure. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In the description of the present application, the meaning of "plurality" means at least two, for example, two, three, etc., unless specifically defined otherwise.
In the present application, unless specifically stated and limited otherwise, the terms "connected," "affixed," and the like are to be construed broadly, and for example, "affixed" may be a fixed connection, a removable connection, or an integral body; the device can be mechanically connected, electrically connected, physically connected or wirelessly connected; either directly or indirectly, through intermediaries, or both, may be in communication with each other or in interaction with each other, unless expressly defined otherwise. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art according to the specific circumstances.
In addition, the technical solutions of the embodiments of the present application may be combined with each other, but it is necessary to be based on the fact that those skilled in the art can implement the technical solutions, and when the technical solutions are contradictory or cannot be implemented, the combination of the technical solutions should be considered as not existing, and not falling within the scope of protection claimed by the present application.
It should be noted that, the high-current diode based on the gradient magnetic field and the gradient magnetic field device in the application are rotationally symmetrical about the central axis (i.e. OO' axis); when the pulse power driving device is used, one side of the pulse power driving device is connected with a pulse power driving source, the side connected with an external pulse power driving source is defined as the left side, the side far away from the external pulse power driving source is defined as the right side, the side close to the central axis OO 'is defined as the inner side, and the side far away from the central axis OO' is defined as the outer side.
As shown in fig. 1 to 4, the present application provides a gradient magnetic field apparatus, which in one embodiment includes: a guiding magnetic field for guiding the strong current relativistic electron beam transmission; the guiding magnetic field includes: a solenoid coil 7; a solenoid coil 7 is wound around the high current diode for forming a gradient magnetic field that radially deflects the high current relativistic electron beam.
In the present embodiment, a pulse power driving source is connected to the left side of the high current diode, and the solenoid coil 7 is wound along the high current diode. The high current diode may be a diode in the prior art, that is, includes: a diode cathode 1, a cathode emitter 2, a diode anode 3, an inner conductor 4, an outer conductor 5 and a drift tube 6; the diode cathode 1 comprises a cathode base 11 and a ring structure 12, and the cathode base 11 can be made of neodymium iron boron with high remanence.
The working procedure of this embodiment is: the high voltage pulse generated by the pulse power driving source is loaded on the high-current diode, a high voltage electric field is formed in the gap between the diode cathode 1, the diode anode 3 and the inner conductor 4, and the high voltage electric field causes the cathode emitter 2 with small radius to perform explosion emission to generate annular IREB; the IREB is mainly influenced by the strong magnetic field generated by the solenoid coil 7 in the vicinity of the cathode emitter 2, and is mainly influenced by the weak magnetic field generated by the solenoid coil 7 in the drift tube 6; the magnetic field has gradient difference from strong to weak in the cathode emitter 2 and the drift tube 6, IREB generates certain radial deflection under the constraint of the gradient magnetic field, the radius is enlarged, and finally the IREB is stably transmitted in the drift tube 6 with large radius.
The gradient magnetic field device utilizes the guiding effect of the gradient magnetic field on IREB, the cathode emitter 2 of the high-current diode is placed at a position with smaller radius, the drift tube 6 for transmitting IREB is placed at a position with larger radius, and the expansion of the radius of IREB and the size reduction of the diode anode 3 are realized through the gradient magnetic field; through reasonable collocation of the high-current diode and the gradient magnetic field, the size of the HPM source system can be obviously reduced when the high-current diode works in a high-impedance state; and the gradient magnetic field device has simple and compact structure, is easy to realize, and can realize uniform and stable transmission of IREB under the condition of smaller system size.
The gradient magnetic field device provides enough magnetic field strength by the guiding magnetic field arranged around the high-current diode, forms a gradient magnetic field for radially deflecting the high-current relativistic electron beam, enlarges the radius of the high-current relativistic electron beam, emits the high-current relativistic electron beam from the cathode emitter 2 with a small radius, and transmits the high-current relativistic electron beam into the drift tube 6 with a large radius, so that the size of the high-impedance diode can be reduced.
In one embodiment, the solenoid coil 7 includes a plurality of sub-coils, each of which is of annular configuration.
The specific information of the number, size, position, number of turns, etc. of the solenoid coils 7 is set according to the actual magnetic field requirement, and the present invention is not limited.
Preferably, the solenoid coil 7 includes a first sub-coil 71 and a second sub-coil 72; the first sub-coil 71 is wound outside the anode 3 of the high-current diode and the second sub-coil 72 is wound outside the outer conductor 5 of the high-current diode.
The inner side of the first sub-coil 71 is closely attached to the outer side of the diode anode 3, and can be fixed to the diode anode 3 by a flange. The first sub-coil 71 has a circular ring structure, an inner radius R4, an outer radius R10, and a length L8.
The second sub-coil 72 is fixedly arranged on the right side of the first sub-coil 71 at a distance L10, and can be fixed to the outer conductor 5 by a flange. The second sub-coil 72 has a circular ring structure with an inner radius R11, an outer radius R12, and a length L9.
R10 and L8 depend on the magnetic field strength required by the cathode emitter 2, L9 depends on the actual length of the HPM source, and generally satisfies 50 mm.ltoreq.L10.ltoreq.150mm, R7.ltoreq.R11 < R10, R11 and L9 together determine the magnetic field strength in the drift tube 6.
In this embodiment, the first sub-coil and the second sub-coil form a guiding magnetic field with a gradient difference, i.e. a gradient magnetic field, and the radial dimension of the high impedance diode can be effectively reduced because the IREB is emitted from the small radius cathode emitter 2 and transmitted into the large radius drift tube 6.
Further preferably, the solenoid coil 7 includes a first sub-coil 71, a second sub-coil 72, and a third sub-coil 73; the first sub-coil 71 is wound outside the anode 3 of the high-current diode, the second sub-coil 72 is wound outside the outer conductor 5 of the high-current diode, and the third sub-coil 73 is wound outside the second sub-coil 72.
The inner side of the first sub-coil 71 is closely attached to the outer side of the diode anode 3, and can be fixed to the diode anode 3 by a flange. The first sub-coil 71 has a circular ring structure, an inner radius R4, an outer radius R10, and a length L8.
The second sub-coil 72 is fixedly arranged on the right side of the first sub-coil 71 at a distance L10, and can be fixed to the outer conductor 5 by a flange. The second sub-coil 72 has a circular ring structure with an inner radius R11, an outer radius R12, and a length L9.
The third sub-coil 73 is a wound portion of the second sub-coil 72, the inner side of which is closely attached to the outer side of the second sub-coil 72, and the right side of which is flush with the right side of the second sub-coil 72, and may be fixed by a flange. The third sub-coil 73 has a circular ring structure, an inner radius R12, an outer radius R13, and a length L11.
R10 and L8 depend on the required magnetic field strength of the cathode emitter 2, L9 depends on the actual length of the HPM source, R13 and L11 depend on the length of the required axial magnetic field in the drift tube 6, generally satisfying 50 mm.ltoreq.L10.ltoreq.150 mm, R7.ltoreq.R11 < R10, R11 < R12 < R10, R11, R12 and L9 together determine the magnetic field strength in the drift tube 6.
In this embodiment, the third sub-coil 73 may be arranged to increase the interval of the uniform magnetic field in the drift tube 6 without increasing the size of the apparatus, so as to meet the length of the uniform axial magnetic field required by the HPM source device; while the maximum size of a conventional diode appears on the increased sub-coil, the maximum size of a gradient magnetic field based high-current diode generally appears on the first sub-coil, so that the increase of the third sub-coil does not change the device size. Moreover, the matching of the first sub-coil, the second sub-coil and the third sub-coil not only considers the reduction of the diode size, but also considers the size of the external guiding magnetic field, thereby ensuring that the solenoid coil can provide enough magnetic field intensity, generating enough gradient difference, ensuring that the diode and the external guiding magnetic field have smaller overall size, compact structure and strong practicability.
In one embodiment, the guiding magnetic field further comprises: a diode cathode 1; the diode cathode 1 comprises a cathode base 11 and a ring structure 12, which can be connected using a threaded manner; the cathode base 11 uses a neodymium-iron-boron material of high remanence for forming an axial magnetic field in the vicinity of the cathode emitter 2.
In the present embodiment, the gradient magnetic field is formed by the first sub-coil 71, the second sub-coil 72, and the diode cathode 1 in common. The magnetic field formed by the high-remanence neodymium-iron-boron used by the cathode base 11 and the magnetic field generated by the first sub-coil 71 jointly determine the magnetic field intensity near the cathode emitter 2, and the magnetic field generated by the first sub-coil 71 near the cathode emitter 2 can be compensated due to the high-remanence neodymium-iron-boron used by the cathode base 11, so that the magnetic field intensity of the magnetic field end of the gradient magnetic field intensity is enhanced; therefore, in the case where the required magnetic field strength is not changed in the vicinity of the cathode emitter 2, the size of the first sub-coil 71 can be significantly reduced, thereby reducing the size of the gradient magnetic field.
The working procedure of this embodiment is: the high voltage pulse generated by the pulse power driving source is loaded on the high-current diode, a high voltage electric field is formed in the gap between the diode cathode 1, the diode anode 3 and the inner conductor 4, and the high voltage electric field causes the cathode emitter 2 with small radius to perform explosion emission to generate annular IREB; the IREB is mainly influenced by a strong magnetic field generated by the first sub-coil 71 and neodymium-iron-boron with high remanence of the diode cathode 1 near the cathode emitter 2, and is mainly influenced by a weak magnetic field generated by the second sub-coil 72 in the drift tube 6; the magnetic field has gradient difference from strong to weak in the cathode emitter 2 and the drift tube 6, IREB generates certain radial deflection under the constraint of the gradient magnetic field, the radius is enlarged, and finally the IREB is stably transmitted in the drift tube 6 with large radius.
In one embodiment, the guiding magnetic field further comprises: an adjustment structure 8; the adjusting structure 8 is fixedly arranged between the first sub-coil 71 and the second sub-coil 72 and wound around the high-current diode, and is fixedly arranged in a ring shape for forming an adjusting magnetic field for adjusting the radius change speed of the high-current relativity electron beam.
The left side of the adjusting structure 8 is at a distance L13 from the first sub-coil 71 and can be flanged to the diode anode 3 or the outer conductor 5. The adjusting structure 8 is a circular ring structure, the inner radius of which is R14, the outer radius of which is R15, and the length of which is L12. R15, L12 and L13 depend on the speed of the IREB radius change and satisfy r14=min (R4, R7), where R4 is the outer radius of the diode anode and R7 is the outer radius of the outer conductor transition section 51.
In the present embodiment, the gradient magnetic field is formed by the first sub-coil 71, the second sub-coil 72, the third sub-coil 73, the diode cathode 1 and the adjustment structure 8 together.
The first sub-coil 71 and the second sub-coil 72 generate radial magnetic fields according to the difference of relative positions (representing the dislocation in the radial direction and the distance in the axial direction) and the difference of the energizing magnitude, but the first sub-coil 71 and the second sub-coil 72 are affected by the volume and the actual functions (the gradient magnitude of the gradient magnetic field is mainly affected by the first sub-coil and the second sub-coil), are often not easy to change, and the generated radial magnetic fields are limited due to physical limitation and the reason of actual engineering assembly, and the speed of the guided change of the radius of IREB is limited, so that the adjusting structure 8 which is convenient for local adjustment and movement is added. The adjusting structure 8 forms a certain radial magnetic field in the IREB radius changing section, so that the speed of IREB radius changing can be adjusted.
The speed of the IREB radius change is affected by the radial magnetic field formed by the first sub-coil 71, the second sub-coil 72 and the adjustment structure 8 together.
The radial magnetic field in the IREB radius change process is increased by introducing the adjusting structure 8, so that the speed of IREB radius change is convenient and adjustable, and the axial length of the HPM source is controlled.
In this embodiment, the adjusting structure 8 may use neodymium iron boron with high remanence, and may use a solenoid coil. Specifically, one or two of them can be selected according to actual conditions.
Preferably, the material of the adjustment structure 8 is neodymium iron boron with high remanence.
The neodymium iron boron with high remanence can generate a magnetic field without any power supply, thereby being beneficial to simplifying the design and saving the resources and the cost; and generally generates a larger magnetic field than an energized coil of comparable size.
As shown in fig. 1 to 4, the present application further provides a high-current diode based on a gradient magnetic field, which in one embodiment includes: gradient magnetic field device.
In the embodiment, the strong current diode based on the gradient magnetic field reduces the capacity of the cathode to emit IREB by reducing the center radius of the cathode, and improves the impedance of the diode; meanwhile, the center radius of the drift tube is not changed so as to maintain the original power capacity; the radius of IREB is increased by the guiding action of the gradient magnetic field to IREB, and the IREB is emitted by the cathode emitter 2 with small radius and is transmitted into the drift tube 6 with large radius. The high-current diode based on the gradient magnetic field not only effectively relieves the problem that the size of the high-impedance diode is difficult to reduce, but also improves the cathode emission electric field, is favorable for uniform emission of IREB, and meets the application requirements of high frequency, high power, high efficiency and miniaturization of the HPM source.
In one embodiment, further comprising: a diode cathode 1, a cathode emitter 2, a diode anode 3, an inner conductor 4, an outer conductor 5 and a drift tube 6.
The left side of the diode cathode 1 is connected with the cathode of the pulse power driving source, and the right side is connected with the cathode emitter 2. The diode cathode 1 consists of a cathode base 11 and an annular structure 12, and can be connected in a threaded manner; the cathode base 11 is of a cylindrical structure, the radius is R1, the length is L1, and the left side of the cathode base is connected with the cathode of the pulse power driving source; the annular structure 12 is a hollow cylindrical structure with an inner radius R2, an outer radius R1, and a length L2.
The cathode emitter 2 is fixed on the diode cathode 1, and specifically, a screw thread form can be adopted, that is, the left side of the cathode emitter 2 and the right side of the annular structure 12 can be connected by adopting screw threads, and the axial distance between the right side of the cathode emitter 2 and the left side of the inner conductor 4 is L4. The cathode emitter 2 is of a hollow cylinder structure, the inner radius is R2, the outer radius is R1, the length is L3, and the thickness is H1. Satisfies that L3 is less than or equal to 5mm and less than or equal to 10mm, L4 is less than or equal to 20mm and less than or equal to 60mm; the thickness H1 of the cathode emitter determines the thickness of IREB, with H2=R1-R2, and in order to control the thickness of IREB, 1 mm.ltoreq.H2 mm is generally satisfied. The cathode emitter 2 is made of fragile materials, and is easy to damage due to frequent disassembly and assembly, so that the cathode emitter 2 is connected with the annular structure 12, and the annular structure 12 can be directly disassembled and assembled during disassembly and assembly.
The left side of the diode anode 3 is connected with the anode of the pulse power driving source and is flush with the left side of the diode cathode 1, and the diode cathode 1 and the cathode emitter 2 are coaxially nested in the diode anode 3. The diode anode 3 has a cylindrical structure, an inner radius of R3, an outer radius of R4, a length of L5 and a wall thickness of H2. Satisfies R4> R3> R1, R4=R3+H2, H2 is not less than 5mm and not more than 10mm, L5=L1+L2+L3+L4; the impedance of the diode is influenced by R3 and R1, the larger the difference value between R3 and R1 is, the higher the impedance of the diode is, and the difference value between R3 and R1 is generally 20mm less than or equal to (R3-R1) less than or equal to 60mm, the impedance of the diode is also influenced by L4, and the larger the L4 is, the higher the impedance of the diode is.
The inner conductor 4 is composed of an inner conductor transition section 41 and an inner conductor constant section 42; the inner conductor transition section 41 is in a truncated cone structure, the inner radius is R5, the outer radius is R6, the length is L6, and the bus is conformal with the IREB motion track; the inner conductor constant section 42 has a cylindrical structure with a radius R6 and a length L7. R5 and L6 depend on the actual motion trail of IREB, R6 depends on the selection of the power capacity of the HPM device, and R6> R5 is more than or equal to R2, and L7 depends on the actual assembly requirement of the HPM device.
The left side of the outer conductor 5 is connected with the right side of the diode anode 3, the inner conductor 4 is coaxially nested in the outer conductor 5 and is flush with the two ends of the outer conductor 5, and the outer conductor 5 and the diode anode 3 can be integrally processed. The outer conductor 5 is composed of an outer conductor transition section 51 and an outer conductor constant section 52; the left side of the outer conductor transition section 51 is connected with the right side of the diode anode 3, the outer conductor transition section 51 is of an annular structure, the outer radius is R7, the left inner radius is R8, the right inner radius is R9, the length is L6, and the bus is conformal with the IREB motion track; the outer conductor constant section 52 has a hollow cylindrical structure, an inner radius R9, an outer radius R7, and a length L7. R7 depends on the actual assembly of the HPM device, R9 depends on the power capacity of the HPM device, L7 depends on the actual assembly requirements of the HPM device, and R9> R6 > R2, R8> R5 > R2, R9-R6 = R8-R5 are satisfied.
The drift tube 6 is an IREB transmission channel, and is an annular cavity structure between the inner conductor 4 and the outer conductor 5, and has an outer radius of R9 and an inner radius of R6. The maximum radius of the drift tube 6 is larger than the radii of the diode cathode 1 and the cathode emitter 2; in order to ensure that the potential energy of IREB does not change in the drift tube, the difference between the outer radius and the inner radius is constant, r9—r6=r8—r5.
In one embodiment, the cathode emitter 2 is immersed in the first sub-coil 71 and is offset to the right in the axial direction thereof.
The right side of the cathode emitter 2 is distant from the right side of the first sub-coil 71 by L14, which is advantageous in suppressing the back flow of electrons emitted from the side surface of the diode cathode 1 or suppressing the back flow of electrons emitted from the side surfaces of the diode cathode 1 and the cathode emitter 2 at the same time; the specific case of emitting electrons depends on whether the voltage reaches the emission threshold of the material: the metal emission threshold of the diode cathode 1 is larger than the cathode emitter 2, and the side surface of the diode cathode 1 emits electrons, however, when the applied voltage exceeds the metal emission threshold, the side surface of the cathode emitter 2 also emits electrons.
In one embodiment, the cathode emitter 2 uses a low emission threshold material.
The low emission threshold material facilitates uniform emission of the high current relativistic electron beam.
In the present embodiment, the cathode base 11 of the diode cathode 1 uses a neodymium-iron-boron material with high remanence; the annular structure 12 of the diode cathode 1, the diode anode 3, the inner conductor 4 and the outer conductor 5 are made of metal materials such as stainless steel, copper, titanium alloy and the like; the cathode emitter 2 uses a low emission threshold material such as graphite, velvet, carbon fiber, etc.
In a specific embodiment, a high-current diode based on a gradient magnetic field and a gradient magnetic field device are disclosed, the corresponding dimensions are ：R1＝39mm,R2＝37mm,R3＝80mm,R4＝90mm,R5＝41.5mm,R6＝57mm,R7＝90mm,R8＝47.5mm,R9＝63mm,R10＝164.8mm,R11＝115mm,R12＝132.4mm,R13＝154.6mm,R14＝90mm,R15＝160mm,L1＝40mm,L2＝15mm,L3＝5mm,L4＝36mm,L5＝96mm,L6＝54mm,L7＝250mm,L8＝96.8mm,L9＝264mm,L10＝70mm,L11＝70.4mm,L12＝25mm,L13＝25mm,L14＝30mm,H1＝2mm,H2＝10mm,R9-R6＝R8-R5＝6mm.
When 680kV voltage is applied to the embodiment of the invention, IREB with the beam current of 8.8kA can be generated, the diode impedance is 77 omega, and the radial dimension of 36mm can be reduced under the condition of the same voltage and impedance compared with the traditional high-current diode (without considering external guiding magnetic field) when the solenoid coil 7 and the adjusting magnetic field 8 are not considered; the diode cathode 1 permanent magnet, the solenoid coil 7 and the adjusting magnetic field 8 in the embodiment of the invention can generate a magnetic field strength of about 1.4T at the diode cathode 1 and the cathode emitter 2, and a magnetic field strength of about 0.6T in the drift tube (radius constant region), and the radial dimension of 10mm can be reduced compared with the conventional high-current diode (considering the magnetic field strength of 0.6T required by the external guiding magnetic field) in consideration of the size of the solenoid coil 7 and the adjusting magnetic field 8.
As shown in fig. 5 and 6, the abscissa in the drawing is the axial distance in mm, the ordinate is the magnetic field intensity in T, and the cathode emitter 2 is at 55 mm-60 mm; in the interval of 60 mm-120 mm, the radial magnetic field is gradually increased from zero, in the interval of 120 mm-170 mm, the radial magnetic field is gradually reduced to zero, the electron beam radius change process is ended, and a stable axial transmission process is entered; the axial magnetic field is maximum at 60mm and is about 1.4T, and then gradually reduced to about 0.6T, so that IREB is stably transmitted in a drift tube with the axial magnetic field of about 0.6T, and the distance interval of stable transmission is about 170-350 mm.
The technical features of the above embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples illustrate only a few embodiments of the application, which are described in detail and are not to be construed as limiting the scope of the application. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the application, which are all within the scope of the application. Accordingly, the scope of protection of the present application is to be determined by the appended claims.
Claims (7)
1. A gradient magnetic field device, comprising: a guiding magnetic field for guiding the strong current relativistic electron beam transmission;
the guiding magnetic field comprises: a solenoid coil;
the solenoid coil is wound around the high-current diode and used for forming a gradient magnetic field for radially deflecting the high-current relativistic electron beam;
the solenoid coil includes a first sub-coil, a second sub-coil, and a third sub-coil;
the first sub-coil is wound on the outer side of the diode anode, the second sub-coil is wound on the outer side of the outer conductor of the high-current diode, and the third sub-coil is wound on the outer side of the second sub-coil;
the outer radius of the third sub-coil is smaller than that of the first sub-coil, and the length of the third sub-coil, the length of the first sub-coil and the length of the second sub-coil are sequentially increased and are larger than the distance between the first sub-coil and the second sub-coil;
The arrangement of the third sub-coil increases the interval of the uniform magnetic field in the drift tube under the condition of not increasing the size of the device so as to meet the length of the uniform axial magnetic field required by the HPM source device.
2. The gradient magnetic field device of claim 1, wherein the first, second and third sub-coils of the solenoid coil are each of annular configuration.
3. The gradient magnetic field device of claim 2, wherein the guiding magnetic field further comprises: an adjustment structure;
The adjusting structure is fixedly arranged between the first sub-coil and the second sub-coil and wound around the high-current diode, and is fixedly arranged in a ring shape so as to be used for forming an adjusting magnetic field for adjusting the radius change speed of the high-current relativity electron beam.
4. A gradient magnetic field device as claimed in claim 3, wherein the solenoid coil and the adjustment structure are both fixed using flange.
5. A gradient magnetic field-based high current diode, comprising: the gradient magnetic field device as set forth in any one of claims 1 to 4.
6. The gradient magnetic field-based high-current diode of claim 5, further comprising: a diode cathode, a cathode emitter, a diode anode, an inner conductor, an outer conductor, and a drift tube.
7. The gradient magnetic field-based high-current diode of claim 6, wherein the cathode emitter is immersed in the first sub-coil and is offset to the right in the axial direction thereof.
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