CN113921357A - Strong current diode and gradient magnetic field device based on gradient magnetic field - Google Patents
Strong current diode and gradient magnetic field device based on gradient magnetic field Download PDFInfo
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- 239000004020 conductor Substances 0.000 claims abstract description 47
- 238000010894 electron beam technology Methods 0.000 claims abstract description 23
- 230000008859 change Effects 0.000 claims abstract description 10
- 230000005540 biological transmission Effects 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims description 12
- QJVKUMXDEUEQLH-UHFFFAOYSA-N [B].[Fe].[Nd] Chemical group [B].[Fe].[Nd] QJVKUMXDEUEQLH-UHFFFAOYSA-N 0.000 claims description 11
- 229910001172 neodymium magnet Inorganic materials 0.000 claims description 11
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 230000002829 reductive effect Effects 0.000 description 12
- 230000007704 transition Effects 0.000 description 8
- 230000005684 electric field Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000033001 locomotion Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000008094 contradictory effect Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000000306 component Substances 0.000 description 2
- 239000002360 explosive Substances 0.000 description 2
- 230000002401 inhibitory effect Effects 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000005381 potential energy Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- 230000004323 axial length Effects 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000002560 therapeutic procedure Methods 0.000 description 1
- -1 velvet Chemical compound 0.000 description 1
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Abstract
The application discloses a gradient magnetic field device, which comprises a guiding magnetic field for guiding the transmission of a high-current relativistic electron beam; the guidance magnetic field comprises a solenoid coil; the solenoid coil is wound around the high current diode and used for forming a gradient magnetic field which enables high current to generate radial deflection relative to a theoretical electron beam, and the gradient magnetic field comprises a first sub-coil, a second sub-coil and a third sub-coil; the first sub-coil is wound on the outer side of the anode of the high-current diode, the second sub-coil is wound on the outer side of the outer conductor of the high-current diode, and the third sub-coil is wound on the outer side of the second sub-coil; the guidance magnetic field further comprises a regulating magnetic field; the adjusting magnetic field is fixedly arranged between the first sub-coil and the second sub-coil and is wound around the high-current diode, and the adjusting magnetic field is used for adjusting the speed of the high current relative to the change of the radius of the theoretical electron beam. The application also discloses a high current diode based on the gradient magnetic field, which comprises a gradient magnetic field device. By the adoption of the high-impedance diode, the problem that the size of the high-impedance diode is difficult to reduce can be solved.
Description
Technical Field
The application relates to the technical field of high-power microwaves, in particular to a high-current diode based on a gradient magnetic field and a gradient magnetic field device.
Background
High Power Microwave (HPM) generally refers to an electromagnetic wave with a peak Power greater than 100MW and a frequency of 1 to 300 GHz. The high-power microwave source is a core component of a high-power microwave system, and converts the kinetic energy of an Electron beam (IREB) into microwave energy by performing beam-wave interaction with a high-frequency electromagnetic structure through the Intense current Relativistic Electron beam (IREB for short) generated by explosion emission of a diode cathode. Therefore, the diode that produces the IREB is one of the crucial components in the HPM system.
The pursuit of higher power, higher frequency, higher efficiency microwave output has always been an important development goal in the field of HPM technology. With the increase of the working frequency of the device, the radius of the traditional single-mode HPM source is gradually reduced, the power capacity of the device is greatly reduced, and finally the high-power microwave output of the high-frequency-band single-mode HPM source is difficult to realize. In order to increase the power capacity of the high-frequency band HPM source and increase the microwave output power, a large-radius over-mode structure or a coaxial structure is often adopted. The large radius over-mode structure increases the power capacity of the HPM source by using a larger drift tube center radius and IREB center radius; the coaxial structure reduces potential energy of IREB and improves space charge limiting current by introducing the coaxial inner conductor. However, as the drift tube center radius and the IREB center radius increase, the cathode of a conventional high current diode's ability to emit IREB rises rapidly and the diode impedance decreases. The operating impedance of the HPM source decreases, which results in an increased space charge effect, resulting in a lower beam-to-wave conversion efficiency of the HPM source and a stronger required external guiding magnetic field.
In the prior art, a coaxial over-mode HPM source generally increases the impedance of a diode by increasing the distance between the cathode and the anode of the diode (increasing the radius of the anode of the diode) so as to reduce the space charge effect and improve the beam-wave conversion efficiency. Since the size of the coaxial over-mode HPM source is determined by the size of the diode, the increase of the distance between the cathode and the anode of the diode further increases the size of the coaxial over-mode HPM source, so that the volume of an external guide magnetic field and the energy consumption are increased, which is contradictory to the requirement of miniaturization of the HPM source; meanwhile, the increase of the distance between the cathode and the anode of the diode can lead to the reduction of the emission electric field at the cathode, which is not favorable for the uniform emission of IREB.
In summary, in order to meet the application requirements of the HPM source for high frequency, high power, high efficiency and miniaturization, the high-frequency HPM source can adopt a large-radius over-mode structure and a coaxial structure to ensure higher output power, which is contradictory between high impedance and miniaturization.
Disclosure of Invention
In view of the above, it is desirable to provide a high current diode based on a gradient magnetic field and a gradient magnetic field apparatus, which can solve the problem that the size of the high impedance diode is difficult to be reduced.
A gradient magnetic field apparatus comprising: a guidance magnetic field for guiding the transmission of the high-current relativistic electron beam;
the guidance magnetic field includes: a solenoid coil;
the solenoid coil is wound around the high current diode for forming a gradient magnetic field for radially deflecting the high current with respect to the theoretical electron beam.
In one embodiment, the solenoid coil comprises a plurality of sub-coils, and each of the sub-coils is of a ring structure.
In one embodiment, the solenoid coil comprises a first sub-coil, a second sub-coil, and a third sub-coil;
the first sub-coil is wound on the outer side of the anode of the diode, the second sub-coil is wound on the outer side of the outer conductor of the high-current diode, and the third sub-coil is wound on the outer side of the second sub-coil.
In one embodiment, the guidance magnetic field further comprises: an adjustment structure;
the adjusting structure is fixedly arranged between the first sub-coil and the second sub-coil and wound around the high-current diode, and is fixedly arranged in a ring shape to form an adjusting magnetic field for adjusting the radius change speed of the high-current relativistic electron beam.
In one embodiment, the material of the adjusting structure is neodymium iron boron with high remanence.
In one embodiment, the solenoid coil and the adjustment structure are both secured using flanges.
A high current diode based on a gradient magnetic field, comprising: a gradient magnetic field device.
In one embodiment, the method further comprises the following steps: the diode comprises a diode cathode, a cathode emitter, a diode anode, an inner conductor, an outer conductor and a drift tube.
In one embodiment, the cathode emitter is immersed in the first subcoil and offset to the axial right thereof.
In one embodiment, the cathode emitter uses a low emission threshold material.
The gradient magnetic field device provides enough magnetic field intensity through the guiding magnetic field arranged around the high-current diode, and forms a gradient magnetic field which enables the high-current relativistic electron beam to generate radial deflection, so that the radius of the high-current relativistic electron beam is increased, the high-current relativistic electron beam is emitted from the cathode emitter with small radius and is transmitted to the drift tube with large radius, and the size of the high-impedance diode can be reduced.
Drawings
FIG. 1 is a schematic illustration of a gradient magnetic field apparatus in one embodiment;
FIG. 2 is a schematic diagram of a high current diode based on gradient magnetic fields in one embodiment;
FIG. 3 is a schematic diagram of a high current diode and gradient magnetic field apparatus based on gradient magnetic fields according to an embodiment;
FIG. 4 is a schematic diagram of the relative positions of the cathode emitters of the high current diodes in one embodiment;
FIG. 5 is a graph of axial and radial magnetic field profiles at a radius of 60mm for one embodiment;
FIG. 6 is a trajectory diagram of IREB generated in one embodiment.
The reference numbers:
1 diode cathode, 11 cathode base, 12 annular structure, 2 cathode emitter, 3 diode anode, 4 inner conductor, 41 inner conductor transition section, 42 inner conductor constant section, 5 outer conductor, 51 outer conductor transition section, 52 outer conductor constant section, 6 drift tube, 7 solenoid coil, 71 first sub-coil, 72 second sub-coil, 73 third sub-coil, 8 adjusting structure.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
It should be noted that all the directional indications (such as up, down, left, right, front, and rear … …) in the embodiment of the present application are only used to explain the relative position relationship between the components, the movement situation, and the like in a specific posture (as shown in the drawing), and if the specific posture is changed, the directional indication is changed accordingly.
In addition, descriptions in this application as to "first", "second", etc. are for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicit to the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present application, "plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
In this application, unless expressly stated or limited otherwise, the terms "connected," "secured," and the like are to be construed broadly, and for example, "secured" may be a fixed connection, a removable connection, or an integral part; the connection can be mechanical connection, electrical connection, physical connection or wireless communication connection; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art as appropriate.
In addition, technical solutions between the various embodiments of the present application may be combined with each other, but it must be based on the realization of the technical solutions by a person skilled in the art, and when the technical solutions are contradictory or cannot be realized, such a combination of technical solutions should be considered to be absent and not within the protection scope of the present application.
It should be noted that, in the present application, the high current diode based on gradient magnetic field and the gradient magnetic field device are rotationally symmetric about the central axis (i.e. OO' axis); when the pulse power driving source is used, one side is connected with the pulse power driving source, one side connected with the external pulse power driving source is defined to be the left side, one side far away from the external pulse power driving source is the right side, one side close to the central axis OO 'is defined to be the inner side, and one side far away from the central axis OO' is the outer side.
As shown in fig. 1-4, the present application provides a gradient magnetic field apparatus, comprising, in one embodiment: a guidance magnetic field for guiding the transmission of the high-current relativistic electron beam; the guidance magnetic field includes: a solenoid coil 7; a solenoid coil 7 is wound around the high current diode for forming a gradient magnetic field for radially deflecting the high current with respect to the theoretical electron beam.
In this embodiment, the left side of the high current diode is connected to a pulse power driving source, and the solenoid coil 7 is wound along the high current diode. The high current diode can adopt a diode in the prior art, namely: the diode comprises a diode cathode 1, a cathode emitter 2, a diode anode 3, an inner conductor 4, an outer conductor 5 and a drift tube 6; the diode cathode 1 includes a cathode base 11 and an annular structure 12, and the cathode base 11 may be made of neodymium iron boron with high remanence.
The working process of the embodiment is as follows: high-voltage pulses generated by a pulse power driving source are loaded on a high-current diode, a high-voltage electric field is formed in a gap between a cathode 1 of the diode, an anode 3 of the diode and an inner conductor 4, and the high-voltage electric field enables a cathode emitter 2 with a small radius to perform explosive emission to generate an annular IREB; IREB is mainly affected by a strong magnetic field generated by the solenoid coil 7 in the vicinity of the cathode emitter 2, and is mainly affected by a weak magnetic field generated by the solenoid coil 7 in the drift tube 6; the magnetic field has gradient difference from strong to weak at the cathode emitter 2 and the drift tube 6, IREB generates certain radial deflection under the constraint of the gradient magnetic field, the radius is enlarged, and finally the magnetic field is stably transmitted in the drift tube 6 with large radius.
The gradient magnetic field device utilizes the guiding effect of the gradient magnetic field on the IREB, the cathode emitter 2 of the high-current diode is placed at a position with a smaller radius, the drift tube 6 for transmitting the IREB is placed at a position with a larger radius, and the radius of the IREB is enlarged and the size of the anode 3 of the diode is reduced through the gradient magnetic field; through the reasonable matching of the high-current diode and the gradient magnetic field, when the high-current diode works in a high-impedance state, the size of the HPM source system can be obviously reduced; and the gradient magnetic field device has simple and compact structure, is easy to realize, and can realize the uniform and stable transmission of the IREB under the condition that the system size is smaller.
The gradient magnetic field device provides enough magnetic field intensity through the guiding magnetic field arranged around the high-current diode, and forms a gradient magnetic field which enables the high-current relativistic electron beam to generate radial deflection, so that the radius of the high-current relativistic electron beam is increased, the high-current relativistic electron beam is emitted from the small-radius cathode emitter 2 and is transmitted to the large-radius drift tube 6, and the size of the high-impedance diode can be reduced.
In one embodiment, the solenoid coil 7 includes a plurality of sub-coils, and each has a ring-shaped structure.
The information such as the number, size, position and number of turns of the solenoid coil 7 is set according to the actual magnetic field requirement, and the present invention is not limited.
Preferably, the solenoid coil 7 includes a first sub-coil 71 and a second sub-coil 72; the first sub-coil 71 is wound outside the anode 3 of the high current diode, and the second sub-coil 72 is wound outside the outer conductor 5 of the high current diode.
The inner side of the first sub-coil 71 is closely attached to the outer side of the diode anode 3 and may be fixed to the diode anode 3 by a flange. The first sub-coil 71 has a circular ring structure, an inner radius of R4, an outer radius of R10, and a length of L8.
The second sub-coil 72 is fixed to the right side of the first sub-coil 71 at a distance L10, and may be flange-fixed to the outer conductor 5. The second sub-coil 72 has a circular ring structure with an inner radius of R11, an outer radius of R12, and a length of L9.
R10 and L8 depend on the magnetic field strength required by the cathode emitter 2, L9 depends on the actual length of the HPM source, and generally the magnetic field strength in the drift tube 6 is determined by 50mm ≦ L10 ≦ 150mm, R7 ≦ R11 < R10, R11 < R10, R11 and L9.
In the present embodiment, the first sub-coil and the second sub-coil form a guiding magnetic field with a gradient difference, i.e., a gradient magnetic field, since IREB is emitted from the small-radius cathode emitter 2 and transmitted into the large-radius drift tube 6, the radial size of the high-impedance diode can be effectively reduced.
Further preferably, the solenoid coil 7 includes a first sub-coil 71, a second sub-coil 72 and a third sub-coil 73; the first sub-coil 71 is wound outside the anode 3 of the high current diode, the second sub-coil 72 is wound outside the outer conductor 5 of the high current diode, and the third sub-coil 73 is wound outside the second sub-coil 72.
The inner side of the first sub-coil 71 is closely attached to the outer side of the diode anode 3 and may be fixed to the diode anode 3 by a flange. The first sub-coil 71 has a circular ring structure, an inner radius of R4, an outer radius of R10, and a length of L8.
The second sub-coil 72 is fixed to the right side of the first sub-coil 71 at a distance L10, and may be flange-fixed to the outer conductor 5. The second sub-coil 72 has a circular ring structure with an inner radius of R11, an outer radius of R12, and a length of L9.
The third sub-coil 73 is a wound portion of the second sub-coil 72, and has an inner side closely attached to the outer side of the second sub-coil 72, and a right side flush with the right side of the second sub-coil 72 and is flange-fixable. The third sub-coil 73 has a circular ring structure, an inner radius of R12, an outer radius of R13, and a length of L11.
R10 and L8 depend on the magnetic field strength required by the cathode emitter 2, L9 depends on the actual length of the HPM source, R13 and L11 depend on the length of the axial magnetic field required in the drift tube 6, and generally satisfy 50mm ≦ L10 ≦ 150mm, R7 ≦ R11 < R10, R11 < R12 < R10, and R11, R12 and L9 together determine the magnetic field strength in the drift tube 6.
In the present embodiment, the third sub-coil 73 is arranged to increase the interval of the uniform magnetic field in the drift tube 6 without increasing the size of the device, so as to satisfy the length of the uniform axial magnetic field required by the HPM source device; the largest size of a conventional diode appears on the added sub-coil, while the largest size of a high current diode based on a gradient magnetic field generally appears on the first sub-coil, so that the addition of the third sub-coil does not change the device size. In addition, the first sub-coil, the second sub-coil and the third sub-coil are matched, not only is the size reduction of the diode considered, but also the size of an external guide magnetic field is considered, so that the solenoid coil is ensured to provide enough magnetic field intensity and generate enough gradient difference, and the diode and the external guide magnetic field are ensured to be small in overall size, compact in structure and high in practicability.
In one embodiment, the guidance field further comprises: a diode cathode 1; the diode cathode 1 comprises a cathode base 11 and an annular structure 12 which can be connected in a threaded manner; the cathode base 11 uses a high remanence neodymium iron boron material for forming an axial magnetic field in the vicinity of the cathode emitter 2.
In the present embodiment, the gradient magnetic field is formed by the first sub-coil 71, the second sub-coil 72, and the diode cathode 1 together. The magnetic field formed by the high-remanence neodymium iron boron used by the cathode base 11 and the magnetic field generated by the first sub-coil 71 jointly determine the magnetic field strength near the cathode emitter 2, and the magnetic field generated by the first sub-coil 71 near the cathode emitter 2 can be compensated due to the high-remanence neodymium iron boron used by the cathode base 11, so that the magnetic field strength at the high-magnetic field end of the gradient magnetic field is enhanced; therefore, the size of the first sub-coil 71, and thus the size of the gradient magnetic field, can be significantly reduced without changing the required magnetic field strength in the vicinity of the cathode emitter 2.
The working process of the embodiment is as follows: high-voltage pulses generated by a pulse power driving source are loaded on a high-current diode, a high-voltage electric field is formed in a gap between a cathode 1 of the diode, an anode 3 of the diode and an inner conductor 4, and the high-voltage electric field enables a cathode emitter 2 with a small radius to perform explosive emission to generate an annular IREB; IREB is mainly influenced by a strong magnetic field generated by the first sub-coil 71 and the neodymium iron boron with high remanence of the diode cathode 1 near the cathode emitter 2, and is mainly influenced by a weak magnetic field generated by the second sub-coil 72 in the drift tube 6; the magnetic field has gradient difference from strong to weak at the cathode emitter 2 and the drift tube 6, IREB generates certain radial deflection under the constraint of the gradient magnetic field, the radius is enlarged, and finally the magnetic field is stably transmitted in the drift tube 6 with large radius.
In one embodiment, the guidance field further comprises: an adjustment structure 8; the adjusting structure 8 is fixedly arranged between the first sub-coil 71 and the second sub-coil 72 and surrounds the high current diode, and the adjusting structure is fixedly arranged in a ring shape and is used for forming an adjusting magnetic field for adjusting the radius change speed of the high current relativistic electron beam.
The left side of the adjusting structure 8 is at a distance L13 from the first partial coil 71 and can be attached to the diode anode 3 or the outer conductor 5 by means of a flange. The adjusting structure 8 is a circular ring structure, and has an inner radius of R14, an outer radius of R15 and a length of L12. R15, L12 and L13 depend on the speed of change of the radius of the IREB and satisfy R14 ═ min (R4, R7), where R4 is the outer radius of the anode of the diode and R7 is the outer radius of the outer conductor transition section 51.
In the present embodiment, the gradient magnetic field is formed by the first sub-coil 71, the second sub-coil 72, the third sub-coil 73, the diode cathode 1 and the adjusting structure 8 together.
The first sub-coil 71 and the second sub-coil 72 generate radial magnetic fields according to different relative positions (representing radial dislocation and axial distance) and different electrified sizes, but the volume and actual functions of the first sub-coil 71 and the second sub-coil 72 (the gradient size of the gradient magnetic field is mainly influenced by the first sub-coil and the second sub-coil) are often not suitable to be changed, and due to physical limitations and actual engineering assembly reasons, the generated radial magnetic field is limited, and the guided speed of the radius change of the IREB is limited, so that an adjusting structure 8 which is convenient to adjust locally and move is added. The adjusting structure 8 forms a certain radial magnetic field in the IREB radius changing section, and the speed of the IREB radius changing can be adjusted.
The IREB radius change speed is influenced by the radial magnetic field formed by the first sub-coil 71, the second sub-coil 72 and the modulating structure 8 together.
The introduction of the adjusting structure 8 increases the radial magnetic field in the IREB radius changing process, so that the speed of the IREB radius changing is convenient and adjustable, and the axial length of the HPM source can be controlled.
In this embodiment, the adjusting structure 8 may be made of neodymium iron boron with high remanence, or may be made of a solenoid coil. Specifically, one or two of them may be selected according to actual conditions.
Preferably, the material of the adjustment structure 8 is neodymium iron boron with high remanence.
The high-remanence neodymium iron boron can generate a magnetic field without any power supply, so that the design is simplified, and resources and cost are saved; and generally produce a larger magnetic field than an energized coil of comparable size.
As shown in fig. 1 to 4, the present application further provides a high current diode based on a gradient magnetic field, which in one embodiment includes: a gradient magnetic field device.
In the embodiment, the strong current diode based on the gradient magnetic field reduces the capability of the cathode for emitting IREB by reducing the central radius of the cathode, and improves the impedance of the diode; meanwhile, the central radius of the drift tube is not changed so as to keep the original power capacity; the radius of IREB is enlarged by utilizing the guiding effect of the gradient magnetic field on the IREB, and the IREB is emitted from the cathode emitter 2 with small radius and is transmitted into the drift tube 6 with large radius. The high-current diode based on the gradient magnetic field not only effectively relieves the problem that the size of the high-impedance diode is difficult to reduce, but also improves the cathode emission electric field, is beneficial to uniform emission of IREB (electron beam therapy) and meets the application requirements of high frequency, high power, high efficiency and miniaturization of the HPM source.
In one embodiment, further comprising: diode cathode 1, cathode emitter 2, diode anode 3, inner conductor 4, outer conductor 5 and drift tube 6.
The left side of the cathode 1 of the diode is connected with the cathode of the pulse power driving source, and the right side of the cathode 1 of the diode is connected with the cathode emitter 2. The diode cathode 1 consists of a cathode base 11 and an annular structure 12, and can be connected in a threaded manner; the cathode base 11 is a cylindrical structure, has a radius of R1 and a length of L1, and the left side of the cathode base is connected with a cathode of a pulse power driving source; the ring structure 12 is a hollow cylindrical structure with an inner radius R2, an outer radius R1, and a length L2.
The cathode emitter 2 is fixed to the diode cathode 1, and may be in the form of a screw thread, that is, the left side of the cathode emitter 2 and the right side of the ring structure 12 may be connected by a screw thread, and the axial distance between the right side of the cathode emitter 2 and the left side of the inner conductor 4 is L4. The cathode emitter 2 is a hollow cylinder structure, the inner radius is R2, the outer radius is R1, the length is L3, and the thickness is H1. L3 is more than or equal to 5mm and less than or equal to 10mm, L4 is more than or equal to 20mm and less than or equal to 60 mm; the thickness of the cathode emitter H1 determines the thickness of IREB, H1 ═ R1 to R2, and in order to control the thickness of IREB, it is generally satisfied that H1 ≦ 2mm is 1 mm. The material used for the cathode emitter 2 is fragile and is easily damaged by frequent disassembly and assembly, so that the cathode emitter 2 is connected with the annular structure 12, and the annular structure 12 can be directly disassembled and assembled during disassembly and assembly.
The left side of the anode 3 of the diode is connected with the anode of the pulse power driving source and is flush with the left side of the cathode 1 of the diode, and the cathode 1 and the cathode emitter 2 of the diode are coaxially nested in the anode 3 of the diode. The diode anode 3 is of a cylindrical structure, the inner radius is R3, the outer radius is R4, the length is L5, and the wall thickness is H2. R4R 3R 1, R4 ═ R3+ H2, H2 ≤ 5mm ≤ 10mm, L5 ═ L1+ L2+ L3+ L4; the impedance of the diode is influenced by R3 and R1, the larger the difference between R3 and R1 is, the higher the impedance of the diode is, generally, the difference between R3 and R1 is more than or equal to 20mm and less than or equal to (R3-R1) and less than or equal to 60mm, the impedance of the diode is also influenced by L4, and the larger L4 is, the higher the impedance of the diode is.
The inner conductor 4 is composed of an inner conductor transition section 41 and an inner conductor constant section 42; the inner conductor transition section 41 is in a circular truncated cone structure, the inner radius is R5, the outer radius is R6, the length is L6, and a bus is conformal to an IREB (iron-wire-bonded) motion track; the inner conductor constant section 42 is of cylindrical configuration with a radius R6 and a length L7. R5 and L6 depend on the actual motion trajectory of IREB, R6 depends on the selection of power capacity of the HPM device, and the requirements of R6> R5 ≧ R2 and L7 depend on the actual assembly requirements of the HPM device.
The left side of outer conductor 5 links to each other with the right side of diode positive pole 3, and inner conductor 4 is coaxial nested in outer conductor 5, and is the same level with the both ends of outer conductor 5, and outer conductor 5 and diode positive pole 3 can adopt the integrated processing. The outer conductor 5 is composed of an outer conductor transition section 51 and an outer conductor constant section 52; the left side of the outer conductor transition section 51 is connected with the right side of the diode anode 3, the outer conductor transition section 51 is of an annular structure, the outer radius is R7, the inner radius of the left side is R8, the inner radius of the right side is R9, the length is L6, and a bus is conformal with an IREB movement track; the outer conductor constant section 52 has a hollow cylindrical structure with an inner radius of R9, an outer radius of R7, and a length of L7. R7 depends on the actual assembly of the HPM device, R9 depends on the power capacity of the HPM device, L7 depends on the actual assembly requirements of the HPM device, and R9> R6> R2, R8> R5 ≧ R2, R9-R6 ≧ R8-R5 are satisfied.
The drift tube 6 is a channel for transmitting IREB, and is an annular cavity structure between the inner conductor 4 and the outer conductor 5, the outer radius is R9, and the inner radius is R6. The maximum radius of the drift tube 6 is larger than the radius of the diode cathode 1 and the cathode emitter 2; in order to ensure that the potential energy of IREB does not change in the drift tube and the difference between the outer radius and the inner radius is constant, R9-R6 is R8-R5.
In one embodiment, the cathode emitter 2 is immersed in the first sub-coil 71 and is offset to the axial right thereof.
The distance between the right side of the cathode emitter 2 and the right side of the first sub-coil 71 is L14, which is beneficial to inhibiting the backflow of electrons emitted from the side surface of the cathode 1 of the diode or inhibiting the backflow of electrons emitted from the side surfaces of the cathode 1 and the cathode emitter 2 of the diode; the specific electron emission depends on whether the voltage reaches the emission threshold of the material: the metal emission threshold of the diode cathode 1 is larger than that of the cathode emitter 2, and electrons are emitted from the side surface of the diode cathode 1, but when the applied voltage exceeds the metal emission threshold, electrons are also emitted from the side surface of the cathode emitter 2.
In one embodiment, the cathode emitter 2 uses a low emission threshold material.
The low emission threshold material facilitates uniform emission of a high current relativistic electron beam.
In the embodiment, the cathode base 11 of the diode cathode 1 uses a neodymium iron boron material with high remanence; the annular structure 12 of the diode cathode 1, the diode anode 3, the inner conductor 4 and the outer conductor 5 are made of metal materials such as stainless steel, copper, titanium alloy and the like; the cathode emitter 2 uses a low emission threshold material such as graphite, velvet, carbon fiber, or the like.
In a specific embodiment, a high current diode and a gradient magnetic field device based on a gradient magnetic field are disclosed, and the corresponding sizes are as follows: r39 mm, R37 mm, R80 mm, R90 mm, R41.5 mm, R57 mm, R90 mm, R47.5 mm, R63 mm, R164.8 mm, R115 mm, R132.4 mm, R154.6 mm, R90 mm, R160 mm, L40 mm, L15 mm, L5 mm, L36 mm, L96 mm, L54 mm, L250 mm, L96.8 mm, L264 mm, L70 mm, L70.4 mm, L25 mm, L30 mm, H2 mm, R10 mm, R6 mm.
When 680kV voltage is applied to the embodiment of the invention, IREB with the beam size of 8.8kA can be generated, the impedance of the diode is 77 omega, and when the solenoid coil 7 and the adjusting magnetic field 8 are not considered, the radial size of 36mm can be reduced compared with the traditional high current diode (without considering an external guide magnetic field) under the condition of the same voltage and impedance; the diode cathode 1 permanent magnet, the solenoid coil 7 and the adjusting magnetic field 8 in the embodiment of the invention can generate a magnetic field strength of about 1.4T at the diode cathode 1 and the cathode emitter 2 and a magnetic field strength of about 0.6T in the drift tube (radius constant region), and the radial size of the diode can be reduced by 10mm compared with the conventional high current diode (considering that an external guide magnetic field needs to generate a magnetic field strength of 0.6T) by considering the size of the solenoid coil 7 and the adjusting magnetic field 8.
As shown in fig. 5 and 6, the abscissa of the graph is axial distance in mm, the ordinate is magnetic field strength in T, and the cathode emitter 2 is at 55mm to 60 mm; in the range of 60 mm-120 mm, the radial magnetic field is gradually increased from zero, in the range of 120 mm-170 mm, the radial magnetic field is gradually reduced to zero, the change process of the radius of the electron beam is finished, and the stable axial transmission process is started; the axial magnetic field is maximum at 60mm, about 1.4T, then gradually decreases to about 0.6T to keep stable, IREB is stably transmitted in a drift tube with the axial magnetic field of about 0.6T, and the distance interval of stable transmission is about 170 mm-350 mm.
The technical features of the above embodiments can be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the above embodiments are not described, but should be considered as the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present application, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the concept of the present application, which falls within the scope of protection of the present application. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (10)
1. A gradient magnetic field apparatus, comprising: a guidance magnetic field for guiding the transmission of the high-current relativistic electron beam;
the guidance magnetic field includes: a solenoid coil;
the solenoid coil is wound around the high current diode for forming a gradient magnetic field for radially deflecting the high current with respect to the theoretical electron beam.
2. The gradient magnetic field apparatus according to claim 1, wherein the solenoid coil comprises a plurality of sub-coils, and each has a ring-shaped structure.
3. The gradient magnetic field apparatus of claim 2, wherein the solenoid coil comprises a first sub-coil, a second sub-coil, and a third sub-coil;
the first sub-coil is wound on the outer side of the anode of the diode, the second sub-coil is wound on the outer side of the outer conductor of the high-current diode, and the third sub-coil is wound on the outer side of the second sub-coil.
4. The gradient magnetic field apparatus of claim 3, wherein the guidance magnetic field further comprises: an adjustment structure;
the adjusting structure is fixedly arranged between the first sub-coil and the second sub-coil and wound around the high-current diode, and is fixedly arranged in a ring shape to form an adjusting magnetic field for adjusting the radius change speed of the high-current relativistic electron beam.
5. The gradient magnetic field apparatus of claim 4, wherein the material of the adjustment structure is neodymium iron boron with high remanence.
6. The gradient magnetic field apparatus of claim 5, wherein the solenoid coil and the adjustment structure are each secured using a flange.
7. A high current diode based on gradient magnetic field, comprising: the gradient magnetic field apparatus of any one of claims 1 to 6.
8. The high-current diode based on gradient magnetic field according to claim 7, further comprising: the diode comprises a diode cathode, a cathode emitter, a diode anode, an inner conductor, an outer conductor and a drift tube.
9. The high current gradient magnetic field-based diode of claim 8, wherein the cathode emitter is immersed in the first sub-coil and shifted to the axial right side thereof.
10. The gradient magnetic field-based heavy current diode of claim 8 or 9, wherein the cathode emitter uses a low emission threshold material.
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