CN113916410A - Pressure sensor, dielectric layer for pressure sensor and manufacturing method thereof - Google Patents
Pressure sensor, dielectric layer for pressure sensor and manufacturing method thereof Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 33
- 239000002086 nanomaterial Substances 0.000 claims abstract description 65
- 239000000463 material Substances 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 23
- 239000002608 ionic liquid Substances 0.000 claims description 19
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 238000003825 pressing Methods 0.000 claims description 5
- 238000003475 lamination Methods 0.000 claims 1
- 230000008859 change Effects 0.000 description 8
- 238000001514 detection method Methods 0.000 description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- 230000009471 action Effects 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- -1 imide salt Chemical class 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 239000003431 cross linking reagent Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- IBZJNLWLRUHZIX-UHFFFAOYSA-N 1-ethyl-3-methyl-2h-imidazole Chemical compound CCN1CN(C)C=C1 IBZJNLWLRUHZIX-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000002042 Silver nanowire Substances 0.000 description 2
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 239000003999 initiator Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- CVHZOJJKTDOEJC-UHFFFAOYSA-M 1,1-dioxo-1,2-benzothiazol-3-olate Chemical compound C1=CC=C2C([O-])=NS(=O)(=O)C2=C1 CVHZOJJKTDOEJC-UHFFFAOYSA-M 0.000 description 1
- BKJDFSXDXOLLOJ-UHFFFAOYSA-N 1-ethyl-3-methyl-1,2-dihydroimidazol-1-ium;4-methylbenzenesulfonate Chemical compound CCN1C[NH+](C)C=C1.CC1=CC=C(S([O-])(=O)=O)C=C1 BKJDFSXDXOLLOJ-UHFFFAOYSA-N 0.000 description 1
- ZXLOSLWIGFGPIU-UHFFFAOYSA-N 1-ethyl-3-methyl-1,2-dihydroimidazol-1-ium;acetate Chemical compound CC(O)=O.CCN1CN(C)C=C1 ZXLOSLWIGFGPIU-UHFFFAOYSA-N 0.000 description 1
- BKGNDBUULDZRKY-UHFFFAOYSA-N 1-ethyl-3-methyl-1,2-dihydroimidazol-1-ium;perchlorate Chemical compound [O-]Cl(=O)(=O)=O.CCN1C[NH+](C)C=C1 BKGNDBUULDZRKY-UHFFFAOYSA-N 0.000 description 1
- AYMDKQQFUZHWGX-UHFFFAOYSA-N 1-ethyl-3-methyl-1,2-dihydroimidazol-1-ium;thiocyanate Chemical compound [S-]C#N.CC[NH+]1CN(C)C=C1 AYMDKQQFUZHWGX-UHFFFAOYSA-N 0.000 description 1
- AFSJUFFXOPXIOH-UHFFFAOYSA-N 1-ethyl-3-methyl-1,2-dihydroimidazol-1-ium;trifluoromethanesulfonate Chemical compound CC[NH+]1CN(C)C=C1.[O-]S(=O)(=O)C(F)(F)F AFSJUFFXOPXIOH-UHFFFAOYSA-N 0.000 description 1
- 239000012956 1-hydroxycyclohexylphenyl-ketone Substances 0.000 description 1
- GJKGAPPUXSSCFI-UHFFFAOYSA-N 2-Hydroxy-4'-(2-hydroxyethoxy)-2-methylpropiophenone Chemical compound CC(C)(O)C(=O)C1=CC=C(OCCO)C=C1 GJKGAPPUXSSCFI-UHFFFAOYSA-N 0.000 description 1
- LWRBVKNFOYUCNP-UHFFFAOYSA-N 2-methyl-1-(4-methylsulfanylphenyl)-2-morpholin-4-ylpropan-1-one Chemical compound C1=CC(SC)=CC=C1C(=O)C(C)(C)N1CCOCC1 LWRBVKNFOYUCNP-UHFFFAOYSA-N 0.000 description 1
- SFPTVQNKTCPLAX-UHFFFAOYSA-N 3-ethyl-1-methyl-1,2-dihydroimidazol-1-ium;2,2,2-trifluoroacetate Chemical compound [O-]C(=O)C(F)(F)F.CC[NH+]1CN(C)C=C1 SFPTVQNKTCPLAX-UHFFFAOYSA-N 0.000 description 1
- HVNRMQRBTPVBEX-UHFFFAOYSA-N CC[NH+]1CN(C=C1)C.C(C(C(F)(F)S(=O)(=O)[O-])(F)F)(C(F)(F)F)(F)F Chemical compound CC[NH+]1CN(C=C1)C.C(C(C(F)(F)S(=O)(=O)[O-])(F)F)(C(F)(F)F)(F)F HVNRMQRBTPVBEX-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- MQDJYUACMFCOFT-UHFFFAOYSA-N bis[2-(1-hydroxycyclohexyl)phenyl]methanone Chemical compound C=1C=CC=C(C(=O)C=2C(=CC=CC=2)C2(O)CCCCC2)C=1C1(O)CCCCC1 MQDJYUACMFCOFT-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- YMCOIFVFCYKISC-UHFFFAOYSA-N ethoxy-[2-(2,4,6-trimethylbenzoyl)phenyl]phosphinic acid Chemical compound CCOP(O)(=O)c1ccccc1C(=O)c1c(C)cc(C)cc1C YMCOIFVFCYKISC-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- ZIUHHBKFKCYYJD-UHFFFAOYSA-N n,n'-methylenebisacrylamide Chemical group C=CC(=O)NCNC(=O)C=C ZIUHHBKFKCYYJD-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920005569 poly(vinylidene fluoride-co-hexafluoropropylene) Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000001291 vacuum drying Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/14—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators
- G01L1/142—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators using capacitors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/12—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in capacitance, i.e. electric circuits therefor
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Composite Materials (AREA)
- Materials Engineering (AREA)
- Power Engineering (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
The invention discloses a method for manufacturing a dielectric layer for a pressure sensor, which comprises the following steps: and respectively manufacturing and forming micro-nano structures on two surfaces of the ionic gel material layer, which are back to each other, so as to form a dielectric layer for the pressure sensor. The invention discloses a dielectric layer for a pressure sensor manufactured by the manufacturing method, the pressure sensor using the dielectric layer and the manufacturing method of the pressure sensor. The invention solves the problem of insufficient performance of the current pressure sensor.
Description
Technical Field
The invention relates to the technical field of sensors, in particular to a pressure sensor, a manufacturing method of the pressure sensor and an electronic device.
Background
The pressure sensor can sense pressure signals and can convert the pressure signals into usable and outputtable electric signals according to a certain rule.
A capacitive pressure sensor is a commonly used pressure sensor. The capacitive pressure sensor has the advantages of simple structure, high response speed, low power consumption, high sensitivity and the like.
The action mechanism of the capacitive pressure sensor is as follows: the thickness of the dielectric layer is changed by the pressure applied on the capacitive pressure sensor, so that the dielectric layer generates capacitance change, the capacitance change is converted into an electric signal, and the pressure is determined by the electric signal.
However, when the capacitive pressure sensor is designed to be thin, the thickness of the dielectric layer does not change significantly. This results in an insignificant change in capacitance of the existing capacitive pressure sensor, which in turn limits the sensitivity of the existing capacitive pressure sensor. Furthermore, due to space limitations of the capacitive pressure sensor structure, the dielectric layer can only have a limited maximum thickness. This means that the range of variation of the thickness of the dielectric layer of the capacitive pressure sensor is limited, and therefore the detection range of the current capacitive pressure sensor cannot meet higher requirements.
Disclosure of Invention
In view of the defects in the prior art, the invention adopts the following technical scheme:
according to an aspect of the present invention, there is provided a method of fabricating a dielectric layer for a pressure sensor, the method comprising: and respectively manufacturing and forming micro-nano structures on two surfaces of the ionic gel material layer, which are back to each other, so as to form a dielectric layer for the pressure sensor.
Preferably, the manufacturing and forming of the micro-nano structure on two surfaces of the ionic gel material layer, which are opposite to each other, comprises:
coating an ionic liquid prepolymer solution on a first surface with a micro-nano structure of a first micro-nano structure template;
pressing a second surface with a micro-nano structure of a second micro-nano structure template on the ionic liquid prepolymer solution to face the first surface;
carrying out curing treatment on the ionic liquid prepolymer solution to form ionic gel material layers with micro-nano structures on two surfaces which are opposite to each other;
and removing the first micro-nano structure template and the second micro-nano structure template.
According to another aspect of the present invention, there is provided a dielectric layer for a pressure sensor manufactured by the above manufacturing method.
According to still another aspect of the present invention, there is provided a method of manufacturing a pressure sensor, the method including:
manufacturing and forming a first electrode layer and a second electrode layer which face each other;
respectively manufacturing and forming micro-nano structures on two surfaces of the ionic gel material layer, which are back to back, so as to form a dielectric layer;
sandwiching the dielectric layer between the first electrode layer and the second electrode layer.
Preferably, the manufacturing and forming of the micro-nano structure on two surfaces of the ionic gel material layer, which are opposite to each other, comprises:
coating an ionic liquid prepolymer solution on a first surface with a micro-nano structure of a first micro-nano structure template;
pressing a second surface with a micro-nano structure of a second micro-nano structure template on the ionic liquid prepolymer solution to face the first surface;
carrying out curing treatment on the ionic liquid prepolymer solution to form ionic gel material layers with micro-nano structures on two surfaces which are opposite to each other;
and removing the first micro-nano structure template and the second micro-nano structure template.
Preferably, the number of the dielectric layers is at least two, and at least two dielectric layers are laminated and sandwiched between the first electrode layer and the second electrode layer.
Preferably, the micro-nano structures on the surfaces of the two adjacent dielectric layers facing each other have a gap therebetween.
According to yet another aspect of the present invention, there is provided a pressure sensor including:
a first electrode layer and a second electrode layer facing each other; and
a dielectric layer sandwiched between the first electrode layer and the second electrode layer;
the dielectric layer is made of an ionic gel material, and micro-nano structures are formed on the surface of the dielectric layer facing the first electrode layer and the surface of the dielectric layer facing the second electrode layer.
Preferably, the number of the dielectric layers is at least two, and at least two dielectric layers are laminated and sandwiched between the first electrode layer and the second electrode layer.
Preferably, the micro-nano structures on the surfaces of the two adjacent dielectric layers facing each other have a gap therebetween.
In the present invention, the counter ion of the dielectric layer made of the ionic gel material and the electron of the electrode layer are attracted to each other to form an ion-electron capacitance interface. In the invention, the dielectric layer and the two electrode layers form two ion-electron capacitors, so that the variable range of the capacitors is improved, and the detection range of the pressure sensor is improved.
In addition, the size of the ion-electron capacitance is changed with the change of the size of the contact area between the electrode layer and the dielectric layer. In the embodiment, the micro-nano structure and the electrode layer are in contact with each other, so that the contact area between the dielectric layer and the electrode layer can be changed under the condition of small pressure change, and the capacitance is changed, thereby improving the sensitivity of the pressure sensor.
Drawings
FIGS. 1 a-1 d are process diagrams of a dielectric layer for a pressure sensor according to an embodiment of the present invention;
FIG. 2 is a flow chart of a method of making a pressure sensor according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a pressure sensor according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of a pressure sensor according to another embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention are described in detail below with reference to the accompanying drawings. Examples of these preferred embodiments are illustrated in the accompanying drawings. The embodiments of the invention shown in the drawings and described in accordance with the drawings are exemplary only, and the invention is not limited to these embodiments.
It should be noted that, in order to avoid obscuring the present invention with unnecessary details, only the structures and/or processing steps closely related to the scheme according to the present invention are shown in the drawings, and other details not so relevant to the present invention are omitted.
Example 1
The embodiment provides a method for manufacturing a dielectric layer for a pressure sensor and a dielectric layer for a pressure sensor manufactured by the method.
The manufacturing method of the dielectric layer for the pressure sensor comprises the following steps:
and respectively manufacturing and forming micro-nano structures on two surfaces of the ionic gel material layer, which are back to back.
Optionally, in this embodiment, the micro-nano structure is a concave structure or a convex structure that is regularly or irregularly distributed.
When the pressure sensor is formed by using the dielectric layer of this embodiment (i.e., a conventional electrode layer/dielectric layer/electrode layer sandwich structure), an ion-electron capacitance interface is formed between the dielectric layer and the electrode layer, and electrons on the electrode layer and counter ions in the dielectric layer are attracted to each other, so that an ion-electron capacitance is formed, that is, when the pressure sensor is manufactured by using the dielectric layer of this embodiment, two capacitors can be formed between the dielectric layer and the two electrode layers.
The calculation formula of the total capacitance of the pressure sensor using the dielectric layer of the present embodiment is as follows:
where C is the total capacitance of the pressure sensor employing the dielectric layer of the present embodiment, C1A capacitor formed between an electrode layer and the dielectric layer, C2Is the capacitance formed between the other electrode layer and the dielectric layer, and ε is the dielectric constant, A1Is the contact area between an electrode layer and the dielectric layer, A2Is the contact area between the other electrode layer and the dielectric layer, and d is the distance between the two electrode layers.
According to the above formula, the total capacitance of the pressure sensor using the dielectric layer of the present embodiment is closely related to the contact area between the electrode and the dielectric layer. As can be seen from the above-mentioned relation, there can theoretically be a very small contact area between the dielectric layer and the electrode layer without the application of external pressure. For example: the micro-nano structure conical structure or the curved surface protruding structure of the dielectric layer forms point contact with the electrode layer. This means that a pressure sensor employing the dielectric layer of the present embodiment can have a very small minimum total capacitance value. Moreover, according to the above formula, it can be further understood that the distance between the two electrode layers is reduced to improve the maximum total capacitance of the pressure sensor using the dielectric layer of the present embodiment, that is, the thickness of the dielectric layer of the present embodiment is appropriately reduced to enable the pressure sensor to have a larger maximum total capacitance.
Therefore, the total capacitance of the pressure sensor adopting the dielectric layer of the embodiment has a wide variation range, so that the pressure sensor can have a wide detection range.
In addition, in the pressure sensor adopting the dielectric layer of the embodiment, the capacitance of the pressure sensor is changed along with the change of the contact area between the electrode layer and the dielectric layer, and the micro-nano structure of the dielectric layer of the embodiment enables the contact area between the dielectric layer and the electrode layer to be changed under the smaller pressure change, so that the capacitance is changed, and the sensitivity of the pressure sensor adopting the dielectric layer of the embodiment is improved.
Example 2
This example provides a preferred method for forming micro-nano structures on two surfaces of a layer of ionic gel material facing away from each other as described in example 1.
As shown in fig. 1a to 1d, the method includes:
coating an ionic liquid prepolymer solution 2 on a first surface with a micro-nano structure of a first micro-nano structure template 1;
pressing a second surface with a micro-nano structure of a second micro-nano structure template 3 on the ionic liquid prepolymer solution 2 to face the first surface;
carrying out curing treatment on the ionic liquid prepolymer solution 2 to form ionic gel material layers 21 with micro-nano structures on two surfaces which are opposite to each other;
and removing the first micro-nano structure template 1 and the second micro-nano structure template 3.
It should be noted that this embodiment is only a preferred method for forming micro-nano structures on two surfaces of the ionic gel material layer opposite to each other. If necessary, the micro-nano structure can be formed on the ionic gel material layer by adopting the existing process. For example: and carrying out photoetching treatment or laser etching treatment on the ionic gel material layer to form the micro-nano structure.
In this embodiment, the ionic liquid prepolymer solution may be obtained by dissolving predetermined amounts of the crosslinking agent and initiator in a preselected ionic liquid. Wherein the mass fraction of the cross-linking agent in the ionic liquid prepolymer solution is controlled to be between 5 and 10 percent.
Specifically, in the present embodiment, the first and second electrodes, the ionic liquid adopts one of 1-ethyl-3-methylimidazole trifluoromethanesulfonate, 1-ethyl-3-methylimidazole trifluoroacetate, 1-ethyl-3-methylimidazole bistrifluoromethylsulfonyl imide salt, 1-ethyl-3-methylimidazole perchlorate, 1-ethyl-3-methylimidazole dinitrile amine salt, 1-ethyl-3-methylimidazole thiocyanate, 1-ethyl-3-methylimidazole saccharinate, 1-ethyl-3-methylimidazole p-methylbenzenesulfonate, 1-ethyl-3-methylimidazole acetate, 1-ethyl-3-methylimidazole nonafluorobutanesulfonate, 1-ethyl-3-methylimidazole tricyanomethane salt and 1-ethyl-3-methylimidazole hexafluoroantimonate.
Preferably, in this embodiment, the crosslinking agent is N, N' -methylenebisacrylamide or polyvinylidene fluoride-hexafluoropropylene.
Preferably, in this embodiment, the initiator is at least one of ammonium persulfate, (2, 4, 6- (trimethylbenzoyl) diphenylphosphine oxide, ethyl 2, 4, 6-trimethylbenzoylphenylphosphonate, 2-hydroxy-2-methyl-1- [4- (2-hydroxyethoxy) phenyl ] -1-propanone, 1-hydroxycyclohexyl phenyl ketone and 2-methyl-2- (4-morpholinyl) -1- [4- (methylthio) phenyl ] -1-propanone.
Example 3
The present embodiment provides a method for manufacturing a pressure sensor, as shown in fig. 2, the method includes:
step S1, manufacturing and forming a first electrode layer and a second electrode layer which face each other;
step S2, respectively manufacturing and forming micro-nano structures on two surfaces of the ionic gel material layer, which are opposite to each other, so as to form a dielectric layer;
step S3, interposing the dielectric layer between the first electrode layer and the second electrode layer.
In this embodiment, step S1 specifically includes the following steps:
step S11, performing hydrophilic treatment on the flexible substrate by adopting oxygen plasma, so as to increase the wettability of ethanol on the surface of the flexible substrate;
s12, spin-coating silver nanowire ethanol dispersion liquid with the concentration of 1-51 mg/ml on the flexible substrate, wherein the spin-coating rotating speed is 1000-2000 rpm/min;
and step S13, carrying out vacuum drying on the silver nanowire ethanol dispersion liquid, and then annealing for 1-5 min by adopting pulsed xenon lamp illumination to form the first electrode layer.
Repeating the steps S11 to S13 to form the second electrode layer.
In this embodiment, preferably, the step S2 can directly adopt the manufacturing method of embodiment 2.
In addition, in order to increase the detection range of the pressure sensor, in this embodiment, the number of the dielectric layers may be at least two, at least two of the dielectric layers are stacked and sandwiched between the first electrode layer and the second electrode layer, and a gap is formed between the micro-nano structures on the surfaces of the two adjacent dielectric layers facing each other. The purpose of this is to distribute the pressure that the outside was exerted evenly in each dielectric layer to this atress uniformity that improves the dielectric layer, and then improves the detection range of pressure sensor.
Example 4
The present embodiment provides a pressure sensor, as shown in fig. 3, including:
a first electrode layer 4 and a second electrode layer 5 facing each other; and
a dielectric layer 6 interposed between the first electrode layer 4 and the second electrode layer 5;
the dielectric layer 6 is made of an ionic gel material, and micro-nano structures are formed on the surface of the dielectric layer facing the first electrode layer 4 and the surface of the dielectric layer facing the second electrode layer 5. The micro-nano structure can be a concave structure or a convex structure which is regularly or irregularly distributed. Preferably, the micro-nano structure can be a conical structure or a curved surface protruding structure.
Preferably, the pressure sensor provided by the present embodiment can be manufactured by combining embodiment 1 and embodiment 2.
In addition, in order to increase the detection range of the pressure sensor, in this embodiment, the number of the dielectric layers may be at least two, at least two of the dielectric layers are stacked and sandwiched between the first electrode layer and the second electrode layer, and a gap is formed between the micro-nano structures on the surfaces of the two adjacent dielectric layers facing each other. The purpose of this is to distribute the pressure that the outside was exerted evenly in each dielectric layer to this atress uniformity that improves the dielectric layer, and then improves the detection range of pressure sensor.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (10)
1. A method of fabricating a dielectric layer for a pressure sensor, the method comprising: and respectively manufacturing and forming micro-nano structures on two surfaces of the ionic gel material layer, which are back to each other, so as to form a dielectric layer for the pressure sensor.
2. The manufacturing method according to claim 1, wherein the micro-nano structure is formed on two surfaces of the ionic gel material layer opposite to each other, and the method comprises the following steps:
coating an ionic liquid prepolymer solution on a first surface with a micro-nano structure of a first micro-nano structure template;
pressing a second surface with a micro-nano structure of a second micro-nano structure template on the ionic liquid prepolymer solution to face the first surface;
carrying out curing treatment on the ionic liquid prepolymer solution to form ionic gel material layers with micro-nano structures on two surfaces which are opposite to each other;
and removing the first micro-nano structure template and the second micro-nano structure template.
3. A dielectric layer for a pressure sensor fabricated by the fabrication method of claim 1 or 2.
4. A method of making a pressure sensor, the method comprising:
manufacturing and forming a first electrode layer and a second electrode layer which face each other;
respectively manufacturing and forming micro-nano structures on two surfaces of the ionic gel material layer, which are back to back, so as to form a dielectric layer;
sandwiching the dielectric layer between the first electrode layer and the second electrode layer.
5. The manufacturing method according to claim 4, wherein the micro-nano structure is formed on two surfaces of the ionic gel material layer opposite to each other, and the manufacturing method comprises the following steps:
coating an ionic liquid prepolymer solution on a first surface with a micro-nano structure of a first micro-nano structure template;
pressing a second surface with a micro-nano structure of a second micro-nano structure template on the ionic liquid prepolymer solution to face the first surface;
carrying out curing treatment on the ionic liquid prepolymer solution to form ionic gel material layers with micro-nano structures on two surfaces which are opposite to each other;
and removing the first micro-nano structure template and the second micro-nano structure template.
6. The method according to claim 4 or 5, wherein the number of the dielectric layers is at least two, and at least two of the dielectric layers are sandwiched between the first electrode layer and the second electrode layer.
7. The manufacturing method according to claim 6, wherein the micro-nano structures on the surfaces of two adjacent dielectric layers facing each other have a gap therebetween.
8. A pressure sensor, comprising:
a first electrode layer and a second electrode layer facing each other; and
a dielectric layer sandwiched between the first electrode layer and the second electrode layer;
the dielectric layer is made of an ionic gel material, and micro-nano structures are formed on the surface of the dielectric layer facing the first electrode layer and the surface of the dielectric layer facing the second electrode layer.
9. The pressure sensor of claim 8, wherein the number of the dielectric layers is at least two, at least two of the dielectric layers being sandwiched in lamination with each other between the first electrode layer and the second electrode layer.
10. The pressure sensor of claim 9, wherein the micro-nano structures on the surfaces of two adjacent dielectric layers facing each other have a gap therebetween.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010648563.7A CN113916410A (en) | 2020-07-07 | 2020-07-07 | Pressure sensor, dielectric layer for pressure sensor and manufacturing method thereof |
Applications Claiming Priority (1)
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| CN109813467A (en) * | 2019-03-25 | 2019-05-28 | 南方科技大学 | Pressure sensor and preparation method and application thereof |
| CN110028614A (en) * | 2019-04-16 | 2019-07-19 | 东华大学 | The micro-nano gel of antibacterial and fiber with protein adsorption function and preparation method thereof |
| CN110440957A (en) * | 2019-07-18 | 2019-11-12 | 浙江清华柔性电子技术研究院 | Flexible dielectric body, pliable pressure sensor and its respective preparation method |
| CN111024272A (en) * | 2019-12-20 | 2020-04-17 | 北京工业大学 | Preparation method of capacitive flexible sensor |
| CN111256571A (en) * | 2020-01-20 | 2020-06-09 | 腾讯科技（深圳）有限公司 | Flexible capacitive touch sensor, preparation method thereof and touch sensing system |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109813467A (en) * | 2019-03-25 | 2019-05-28 | 南方科技大学 | Pressure sensor and preparation method and application thereof |
| CN110028614A (en) * | 2019-04-16 | 2019-07-19 | 东华大学 | The micro-nano gel of antibacterial and fiber with protein adsorption function and preparation method thereof |
| CN110440957A (en) * | 2019-07-18 | 2019-11-12 | 浙江清华柔性电子技术研究院 | Flexible dielectric body, pliable pressure sensor and its respective preparation method |
| CN111024272A (en) * | 2019-12-20 | 2020-04-17 | 北京工业大学 | Preparation method of capacitive flexible sensor |
| CN111256571A (en) * | 2020-01-20 | 2020-06-09 | 腾讯科技（深圳）有限公司 | Flexible capacitive touch sensor, preparation method thereof and touch sensing system |
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