CN113913927A

CN113913927A - Metal organic chemical vapor deposition equipment and using method thereof

Info

Publication number: CN113913927A
Application number: CN202110983017.3A
Authority: CN
Inventors: 袁将峰; 招晨; 刘华明
Original assignee: HC Semitek Suzhou Co Ltd
Current assignee: HC Semitek Suzhou Co Ltd
Priority date: 2021-08-25
Filing date: 2021-08-25
Publication date: 2022-01-11

Abstract

The disclosure provides metal organic chemical vapor deposition equipment and a using method thereof, and belongs to the technical field of epitaxial growth. The adjusting part is the annular baffle that one end links to each other with the top of reaction chamber, and annular baffle's internal perisporium and periphery wall are smooth cylinder, have got rid of the existence of gas cushion ring at annular baffle's internal perisporium, improve the stability and the distribution uniformity of reaction intracavity gas field. The whole cover of annular baffle is outside the heater block, and annular baffle's the height that highly is greater than the heater block and is less than the minimum height of epitaxial tray, and the heat of the gas in the reaction chamber also can be comparatively even, and the temperature evenly transmits gaseous temperature field and smooth stability that also can improve gas to gas, replaces the water conservancy diversion effect of buffer ring. Finally, the uniformity of the gas flow distribution and the uniformity of the temperature distribution in the reaction cavity can be effectively improved.

Description

Metal organic chemical vapor deposition equipment and using method thereof

Technical Field

The disclosure relates to the technical field of epitaxial growth, in particular to metal organic chemical vapor deposition equipment and a using method thereof.

Background

A Metal Organic Chemical Vapor Deposition (MOCVD) apparatus is a common epitaxial material growth apparatus. The MOCVD equipment comprises a reaction chamber, a heating component, an annular baffle plate and an epitaxial tray, wherein the heating component, the annular baffle plate and the epitaxial tray are positioned in the reaction chamber, the heating component is supported at the bottom of the reaction chamber, the annular baffle plate is connected with the top of the reaction chamber, and the inner peripheral wall of the annular baffle plate is provided with a coaxial gas buffer ring. The annular baffle is located between epitaxial tray and heating member, and the heating member is used for heating epitaxial tray. And introducing air into the reaction cavity to realize the reaction deposition of the reaction airflow on the substrate above the epitaxial tray so as to obtain the epitaxial part.

The distribution of the gas flow itself in the reaction chamber, as well as the uniformity of the temperature distribution of the gas flow, directly affects the quality of the epitaxial components obtained from the reaction of the reactant gas flow. The gas buffering ring on the inner peripheral wall of the annular baffle plate can play a certain gas diversion role, but the existence of the gas buffering ring can also cause the gas flow to form a vortex near the annular baffle plate, so that the distribution stability of the gas flow is influenced, and the quality of an epitaxial part obtained in the reaction cavity is further influenced. The uniformity of the gas flow distribution and the uniformity of the temperature distribution in the reaction chamber are not ideal.

Disclosure of Invention

The embodiment of the disclosure provides metal organic chemical vapor deposition equipment and a using method thereof, which can improve the uniformity of gas flow distribution and the uniformity of temperature distribution in a reaction chamber. The technical scheme is as follows:

the embodiment of the disclosure provides a metal organic chemical vapor deposition device, which comprises a reaction chamber, a growth part, a heating part and a regulating part,

the growth part comprises an extension tray and a driving component, the extension tray is positioned in the reaction cavity, the driving component is connected with the extension tray and is used for driving the extension tray to rotate or axially move,

the heating component is connected with the reaction chamber and used for heating the epitaxial tray,

adjusting part includes ring baffle, ring baffle's one end with the top of reaction chamber links to each other, just ring baffle with the coaxial interval distribution of epitaxial tray, ring baffle's internal perisporium and periphery wall are smooth cylinder, the ring baffle cover is in outside the heater block, ring baffle is located epitaxial tray with between the heater block.

Optionally, the axial height of the annular baffle is 8cm to 10 cm.

Optionally, the adjusting part further includes an annular molybdenum cover coaxial with the annular baffle, one end of the annular molybdenum cover is connected to the bottom of the reaction chamber, the outer peripheral wall of the annular molybdenum cover is attached to the inner peripheral wall of the annular baffle, and the annular molybdenum cover is sleeved on the heating part.

Optionally, the heater block includes heater strip and heating support, heating support with the reaction chamber links to each other, the heater strip with heating support links to each other just the heater strip is located heating support with between the epitaxial tray, heating support with distance between the internal perisporium of annular molybdenum cover is 4 ~ 6 mm.

Optionally, the minimum distance between the epitaxial tray and the heating wire is 9mm to 10 mm.

Optionally, the adjusting part further comprises an exhaust ring, the inner peripheral wall of the exhaust ring is coaxially connected with the outer peripheral wall of the annular molybdenum cover, the exhaust ring is circumferentially provided with a plurality of exhaust holes, and the difference between the minimum distance between the exhaust holes and the axis of the exhaust ring and the outer diameter of the annular molybdenum cover is 2.5 mm-3.5 mm.

Optionally, the diameter of the exhaust hole is 25-35 mm.

Optionally, the exhaust holes are distributed at equal intervals along the circumferential direction of the exhaust ring, and the distance between two adjacent exhaust holes is 23 cm-26 cm.

The embodiment of the disclosure provides a using method of metal organic chemical vapor deposition equipment, and the using method comprises the following steps:

providing a metalorganic chemical vapor deposition apparatus as previously described;

placing an epitaxial substrate on an epitaxial tray of the metal organic chemical vapor deposition equipment;

introducing an organic metal source and reaction gas into a reaction cavity of the metal organic chemical vapor deposition equipment;

and growing an epitaxial structure on the surface of the epitaxial substrate.

Optionally, growing the epitaxial structure at a growth rotation speed of 0-1250.

The technical scheme provided by the embodiment of the disclosure has the following beneficial effects:

the metal organic vapor deposition equipment comprises a reaction chamber, a growth part, a heating part and a regulating part. The epitaxial tray that is arranged in the reaction chamber among the growth structure can be used for supporting the substrate, and drive assembly can be used for driving epitaxial tray normal rotation in order to realize growing. The heating component connected with the reaction chamber can heat the epitaxial tray to ensure that the epitaxial structure can effectively react and grow. The adjusting part is the annular baffle that one end links to each other with the top of reaction chamber, and annular baffle's internal perisporium is smooth cylinder with the periphery wall, has got rid of the existence of gas buffering ring at annular baffle's internal perisporium, and annular baffle itself can not influence the normal flow of air current, and gas buffering ring also can not influence the normal flow of air current, can improve the stability and the distribution uniformity of reaction intracavity gas field. Gaseous buffering ring has been got rid of to the internal perisporium at annular baffle, make the whole cover of annular baffle outside the heater block, and annular baffle is located between heater block and the epitaxial tray, annular baffle can be preserved the heat of heater block, make the heat can effectively transmit to the epitaxial tray on through annular baffle's inner space and reduce the heat transmission to the reaction chamber except the regional possibility outside the tray of extending, the heat of the gas in the reaction chamber mainly passes through the transmission of epitaxial tray, the heat of the gas in the reaction chamber also can be comparatively more even, the even transmission of temperature also can improve gaseous temperature field and smooth stability to gas, replace the water conservancy diversion effect of buffering ring. Finally, the uniformity of the gas flow distribution and the uniformity of the temperature distribution in the reaction cavity are effectively improved.

Drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present disclosure, and it is obvious for those skilled in the art to obtain other drawings based on the drawings without creative efforts.

FIG. 1 is a schematic structural diagram of a metal organic chemical vapor deposition apparatus provided by an embodiment of the present disclosure;

FIG. 2 is a schematic structural diagram of an annular baffle provided by an embodiment of the present disclosure;

FIG. 3 is a schematic structural diagram of a part of a metal organic chemical vapor deposition device provided by an embodiment of the disclosure;

FIG. 4 is a schematic structural diagram of an annular molybdenum shield provided by an embodiment of the present disclosure;

FIG. 5 is a schematic view of the annular molybdenum shield and the heating fixture provided by the disclosed embodiment;

FIG. 6 is a schematic structural diagram of a vent ring provided by an embodiment of the present disclosure;

fig. 7 is a flowchart of a method for using a metal organic chemical vapor deposition apparatus according to an embodiment of the disclosure.

Detailed Description

To make the objects, technical solutions and advantages of the present disclosure more apparent, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings.

Unless defined otherwise, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this disclosure belongs. The use of "first," "second," "third," and similar terms in the description and claims of the present disclosure are not intended to indicate any order, quantity, or importance, but rather are used to distinguish one element from another. Also, the use of the terms "a" or "an" and the like do not denote a limitation of quantity, but rather denote the presence of at least one. The word "comprise" or "comprises", and the like, means that the element or item listed before "comprises" or "comprising" covers the element or item listed after "comprising" or "comprises" and its equivalents, and does not exclude other elements or items. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", "top", "bottom", and the like are used merely to indicate relative positional relationships, which may also change accordingly when the absolute position of the object being described changes.

To facilitate understanding, fig. 1 is provided herein, and fig. 1 is a schematic structural diagram of a metal organic chemical vapor deposition apparatus provided in an embodiment of the present disclosure, and as can be seen from fig. 1, the embodiment of the present disclosure provides a metal organic chemical vapor deposition apparatus including a reaction chamber 1, a growth part 2, a heating part 3, and a conditioning part 4.

The growth part 2 comprises an epitaxial tray 21 and a driving assembly 22, wherein the epitaxial tray 21 is positioned in the reaction chamber 1, the driving assembly 22 is connected with the epitaxial tray 21, and the driving assembly 22 is used for driving the epitaxial tray 21 to rotate or move axially.

The heating member 3 is connected to the reaction chamber 1, and the heating member 3 is used for heating the epitaxial wafer 21.

The adjusting part 4 comprises an annular baffle plate 41, one end of the annular baffle plate 41 is connected with the top of the reaction chamber 1, the annular baffle plate 41 and the epitaxial tray 21 are distributed coaxially and at intervals, the inner peripheral wall and the outer peripheral wall of the annular baffle plate 41 are both smooth cylindrical surfaces, the annular baffle plate 41 is sleeved outside the heating part 3, and the annular baffle plate 41 is positioned between the epitaxial tray 21 and the heating part 3.

The metal organic vapor deposition equipment comprises a reaction chamber 1, a growth part 2, a heating part 3 and a regulating part 4. An epitaxial tray 21 in the growth structure within the reaction chamber 1 may be used to support the substrate, and a drive assembly 22 may be used to drive the epitaxial tray 21 to rotate normally to achieve growth. The heating component 3 connected with the reaction chamber 1 can heat the epitaxial tray 21 to ensure that the epitaxial structure can effectively react and grow. Adjusting part 4 is the annular baffle 41 that one end links to each other with the top of reaction chamber 1, and the internal perisporium and the periphery wall of annular baffle 41 are smooth cylinder, and the existence of gas cushion ring has been removed at the internal perisporium of annular baffle 41, and annular baffle 41 itself can not influence the normal flow of air current, and gas cushion ring can not influence the normal flow of air current yet, can improve the stability and the distribution uniformity of gas field in the reaction chamber 1. When gaseous buffering ring has been got rid of to the internal perisporium of annular baffle 41, make annular baffle 41 wholly overlap outside heating member 3, and annular baffle 41 is located between heating member 3 and the tray 21 that extends, annular baffle 41 can be preserved the heat of heating member 3, make the heat can effectively transmit to the tray 21 that extends on through annular baffle 41's inner space and reduce the heat transmission to reaction chamber 1 except that extend the regional possibility outside tray 21, the heat of the gas in reaction chamber 1 mainly transmits through the tray 21 that extends, the heat of the gas in reaction chamber 1 also can be comparatively more even, the even transmission of temperature can also improve gaseous temperature field and smooth stability to gas, replace the water conservancy diversion effect of buffering ring. Finally, the uniformity of the gas flow distribution and the uniformity of the temperature distribution in the reaction chamber 1 are effectively improved. The buffer ring is removed, so that the situation that the organic metal source carried by the airflow or the waste gas dust existing in the waste gas remains on the buffer ring to influence the flow of the airflow can be avoided, the smoothness of the airflow can be ensured, and the airflow blockage caused by the impurities or the organic metal source can be reduced. The removal of the buffer ring can also reduce the preparation cost of the MOCVD equipment and omit the maintenance cost required by the buffer ring, thereby effectively reducing the preparation cost and the maintenance cost of the MOCVD equipment.

It should be noted that, in normal use of the MOCVD equipment, the epitaxial tray 21 in the MOCVD equipment is generally horizontally placed, the axis of the epitaxial tray 21 is parallel to the gravity direction of the position of the epitaxial tray 21, and one end of the epitaxial tray 21 close to the top of the reaction chamber 1 is provided with a plurality of circular grooves for placing substrates. When the MOCVD equipment is used, the substrate can be placed in the circular groove and used for growing epitaxial materials. When the heating member 3 heats, the heat of the heating member 3 is transferred to the epitaxial tray 21 through gas, and then is sequentially transferred to the substrate in the circular groove and the epitaxial material on the substrate through the epitaxial tray 21, so that the normal temperature transfer is realized. The reaction chamber 1 of the MOCVD equipment is generally located in a housing of the MOCVD equipment, the housing of the MOCVD equipment comprises a base 100 and a sealing cover 200 hinged to the base 100, the base 100 is provided with a groove-shaped installation space, the sealing cover 200 is used for covering the installation space, and the installation space when the sealing cover 200 and the base 100 are closed forms the reaction chamber 1.

It should be noted that the reaction chamber 1 may be a cylindrical chamber.

In an implementation manner provided by the present disclosure, the driving assembly 22 includes a driving motor, a base of the driving motor is located outside the reaction chamber 1, an output shaft of the driving motor extends into the reaction chamber 1, a peripheral wall of the output shaft of the driving motor and the reaction chamber 1 are sealed in a sliding manner, and one end of the output shaft of the driving motor, which is far away from the base, is coaxially connected with the epitaxial tray 21.

The driving assembly 22 comprises a driving motor, a base of the driving motor is positioned outside the reaction chamber 1, and an output shaft of the driving motor extends into the reaction chamber 1 and then is connected with the extension tray 21, so that the service life of the driving motor can be prolonged, and the stable rotation of the extension tray 21 can be ensured.

It should be noted that, as the drive motor in the drive assembly 22 is located outside the reaction chamber 1, the housing of the MOCVD equipment may be supported on the ground or fixed on other fixed components, which is not limited by the present disclosure.

Optionally, the annular baffle 41 has an axial height of 8cm to 10 cm.

When the axial height of the annular baffle plate 41 is within the above range, it is applicable to the space of the reaction chamber 1 in most MOCVD equipment, and it is ensured that heat can be efficiently and stably transferred between the heating member 3 and the epitaxial tray 21. The annular baffle plate 41 is low in preparation cost, so that the preparation cost required by the whole MOCVD equipment can be effectively controlled, and the preparation cost required by the MOCVD equipment is reduced.

Illustratively, the annular baffle 41 may be fabricated from a stainless steel material. The obtained annular baffle plate 41 has better high temperature resistance and quality, and can effectively reduce the maintenance cost required by MOCVD equipment.

Illustratively, the inner peripheral wall of the annular baffle 41 may be a clearance fit with the outer peripheral wall of the epitaxial tray 21.

There is clearance fit between the internal perisporium of ring baffle 41 and the periphery wall of epitaxial tray 21, on the one hand can not influence the normal rotation of epitaxial tray 21 itself, on the other hand ring baffle 41 itself also can reduce reaction gas more than epitaxial tray 21 and get into ring baffle 41 in contact with heating member 3 and influence the possibility to epitaxial tray 21's heat transfer, can guarantee the stable heat transfer between epitaxial tray 21 and the heating member 3, reduce thermal dispersion, guarantee air current distribution homogeneity and temperature field stability in the reaction chamber 1, improve the quality of the epitaxial structure that finally obtains.

Fig. 2 is a schematic structural diagram of the annular baffle plate provided in the embodiment of the present disclosure, and as can be seen from fig. 2, the outer peripheral wall of the annular baffle plate 41 may have a small number of structures for connecting with other structures in the MOCVD equipment.

Fig. 3 is a schematic partial structural view of a metal organic chemical vapor deposition apparatus provided in an embodiment of the present disclosure, and as can be seen from fig. 3, the adjusting member 4 further includes an annular molybdenum cover 42 coaxial with the annular baffle 41, one end of the annular molybdenum cover 42 is connected to the bottom of the reaction chamber 1, an outer circumferential wall of the annular molybdenum cover 42 is attached to an inner circumferential wall of the annular baffle 41, and the annular molybdenum cover 42 is sleeved on the heating member 3.

The annular molybdenum cover 42 can be matched with the annular baffle plate 41 to control the stable flow of heat between the heating part 3 and the epitaxial tray 21, the heat transfer is not easy to disperse, and the stability of an air field and a temperature field in the reaction chamber 1 can be ensured to improve the crystal quality of the finally obtained epitaxial structure.

Alternatively, the outer peripheral wall of the annular molybdenum cap 42 may be directly clearance-fitted with the inner peripheral wall of the annular baffle 41. The movement of the annular baffle plate 41 and the annular molybdenum cover 42 is convenient, and the stability of the gas field and the temperature field inside the reaction chamber 1 can be ensured.

Illustratively, the minimum distance between the annular molybdenum cover 42 and the heating part 3 is 4-6 mm.

The minimum distance between the internal perisporium of control annular molybdenum cover 42 and the heater block 3 is 4 ~ 6mm, can reduce the short circuit risk, avoids the difference in temperature of the different positions of internal perisporium of annular molybdenum cover 42 great and influence the condition of heat transfer to appear, effectively guarantees that the heat transfer is even, can effectively improve the air current distribution degree of consistency and the temperature distribution degree of consistency in the reaction chamber 1 finally.

Fig. 4 is a schematic structural diagram of an annular molybdenum cover provided in an embodiment of the present disclosure, and referring to fig. 4, an outer circumferential wall of the annular molybdenum cover 42 has a plurality of circumferentially evenly spaced support ribs 421. The stability of use of the annular molybdenum shield 42 can be enhanced.

Illustratively, the annular molybdenum shield 42 and the bottom of the reaction chamber 1 can be connected through a lug plate and bolt structure. The annular molybdenum cover 42 is convenient to disassemble and assemble.

Optionally, the heating member 3 includes a heating wire 31 and a heating bracket 32, the heating bracket 32 is connected to the reaction chamber 1, the heating wire 31 is connected to the heating bracket 32 and the heating wire 31 is located between the heating bracket 32 and the epitaxial tray 21, and a distance between the heating bracket 32 and an inner peripheral wall of the annular molybdenum cover 42 is 4-6 mm.

The heating component 3 comprises a heating wire 31 and a heating part, the heating bracket 32 is connected with the reaction chamber 1, the heating wire 31 is connected with the heating bracket 32, and the heating wire 31 is positioned between the heating bracket 32 and the epitaxial tray 21. Stable heating of the heating wire 31 and the epitaxial tray 21 can be facilitated. And the distance between the heating support 32 and the inner peripheral wall of the annular molybdenum cover 42 is 4-6 mm, so that the temperature unevenness in the reaction chamber 1 caused by the high temperature at the contact position of the heating support 32 and the annular molybdenum cover 42 due to the contact between the heating support 32 and the annular molybdenum cover 42 can be avoided.

Illustratively, the heating fixture 32 is an annular cylindrical structure.

While the heating wire 31 can be effectively supported, the temperature of the heating bracket 32 can be uniformly distributed, which is beneficial to improving the uniformity of the gas field and the temperature field in the reaction chamber 1.

Fig. 5 is a schematic diagram of the annular molybdenum cover and the heating bracket provided in the embodiment of the present disclosure, and referring to fig. 5, a certain distance is provided between the heating bracket 32 and the inner peripheral wall of the annular molybdenum cover 42.

Optionally, the minimum distance between the heating wire 31 and the annular molybdenum shield 42 is also 4-6 mm.

The minimum distance between the heating wire 31 and the annular molybdenum shield 42 can be further controlled within the above range, and the possibility of temperature unevenness in the reaction chamber 1 can be further reduced.

It should be noted that the minimum distance between the heating wire 31 and the annular molybdenum cover 42 is the minimum distance between the inner peripheral wall of the annular molybdenum cover 42 and the heating wire 31 in the radial direction of the annular molybdenum cover 42.

Exemplarily, the outer contour of the projection of the heating wire 31 on the plane where the end face of the epitaxial tray 21 is located may be circular.

The heater wire 31 may facilitate heat transfer without the overall cost of the heater wire 31 being prohibitive.

Exemplarily, the outer contour of the projection of the heating wire 31 on the plane where the end surface of the extension bracket is located may be a circle, and the heating wire 31 may have a multiple bending manner inside the circle to fill the inner space of the circle.

In other implementations provided by the present disclosure, the heating wire 31 may also be a circular heating plate or a ring-shaped heating plate. The present disclosure is not so limited.

Optionally, the minimum distance between the epitaxial tray 21 and the heating wire 31 is 9mm to 10 mm.

When the minimum distance between the epitaxial tray 21 and the heater wire 31 is within the above range, stable heat transfer between the heater wire 31 and the epitaxial tray 21 can be ensured, and the heat transfer is also gentle.

The minimum distance between the heater wire 31 and the extension tray 21 is the minimum distance between the heater wire 31 and the extension tray 21 in the axial direction of the extension tray 21.

Optionally, the adjusting part 4 further comprises an exhaust ring 43, the inner circumferential wall of the exhaust ring 43 is coaxially connected with the outer circumferential wall of the annular molybdenum cover 42, the exhaust ring 43 has a plurality of exhaust holes 431 in the circumferential direction, and the difference between the minimum distance between the exhaust holes 431 and the axis of the exhaust ring 43 and the outer diameter of the annular molybdenum cover 42 is 2.5 mm-3.5 mm.

The exhaust ring 43 can guide and remove the waste gas produced in the reaction chamber 1, so that the purity of the gas environment in the reaction chamber 1 is ensured, and the quality of the finally obtained epitaxial structure is improved. When the difference between the minimum distance between the axes of the exhaust hole 431 and the exhaust ring 43 and the outer diameter of the annular molybdenum cover 42 is within the above range, the structure of the exhaust ring 43 is stable, the strength of the exhaust ring 43 is good, and the stable use of the MOCVD equipment can be ensured.

The exhaust ring 43 and the annular molybdenum cover 42 may be installed at the bottom of the reaction chamber 1, the bottom of the reaction chamber 1 may have a through hole 11 corresponding to the exhaust hole 431 on the exhaust ring 43, and the other end of the through hole 11 is connected to the exhaust gas treatment device 5. The stable transmission of the gas flow in the MOCVD equipment can be realized.

Fig. 6 is a schematic structural diagram of an exhaust ring according to an embodiment of the disclosure, and referring to fig. 6, the exhaust ring 43 has a plurality of exhaust holes 431.

Optionally, the diameter of the vent 431 is 25-35 mm.

The diameter of the exhaust hole 431 is within the range, so that waste gas deposited in the reaction cavity 1 can be effectively cleaned, the gas in the reaction cavity 1 flows more smoothly, and the ventilation efficiency in the reaction cavity 1 can be improved to improve the crystal quality of the finally obtained epitaxial structure.

Alternatively, the plurality of exhaust holes 431 are equidistantly distributed along the circumferential direction of the exhaust ring 43, and the distance between two adjacent exhaust holes 431 is 23 cm-26 cm.

The distance between two adjacent exhaust holes 431 is within the above range, so that the strength of the exhaust ring 43 can be ensured, meanwhile, the waste gas deposited in the reaction chamber 1 can be effectively cleaned, the gas in the reaction chamber 1 flows more smoothly, and the ventilation efficiency in the reaction chamber 1 can be improved so as to improve the crystal quality of the finally obtained epitaxial structure.

Fig. 7 is a flowchart illustrating a method for using a metal organic chemical vapor deposition apparatus according to an embodiment of the present disclosure, and referring to fig. 7, the embodiment of the present disclosure provides a method for using a metal organic chemical vapor deposition apparatus, the method includes:

s101: there is provided a metal organic chemical vapour deposition apparatus as hereinbefore described.

S102: and placing the epitaxial substrate on an epitaxial tray of the metal organic chemical vapor deposition equipment.

S103: and introducing an organic metal source and reaction gas into a reaction cavity of the metal organic chemical vapor deposition equipment.

S104: and growing an epitaxial structure on the surface of the epitaxial substrate.

The metal organic vapor deposition equipment comprises a reaction chamber, a growth part, a heating part and a regulating part. The epitaxial tray that is arranged in the reaction chamber among the growth structure can be used for supporting the substrate, and drive assembly can be used for driving epitaxial tray normal rotation in order to realize growing. The heating component connected with the reaction chamber can heat the epitaxial tray to ensure that the epitaxial structure can effectively react and grow. The adjusting part is the annular baffle that one end links to each other with the top of reaction chamber, and annular baffle's internal perisporium is smooth cylinder with the periphery wall, has got rid of the existence of gas buffering ring at annular baffle's internal perisporium, and annular baffle itself can not influence the normal flow of air current, and gas buffering ring also can not influence the normal flow of air current, can improve the stability and the distribution uniformity of reaction intracavity gas field. Gaseous buffering ring has been got rid of to the internal perisporium at annular baffle, make the whole cover of annular baffle outside the heater block, and annular baffle is located between heater block and the epitaxial tray, annular baffle can be preserved the heat of heater block, make the heat can effectively transmit to the epitaxial tray on through annular baffle's inner space and reduce the heat transmission to the reaction chamber except the regional possibility outside the tray of extending, the heat of the gas in the reaction chamber mainly passes through the transmission of epitaxial tray, the heat of the gas in the reaction chamber also can be comparatively more even, the even transmission of temperature also can improve gaseous temperature field and smooth stability to gas, replace the water conservancy diversion effect of buffering ring. Finally, the uniformity of the gas flow distribution and the uniformity of the temperature distribution in the reaction cavity are effectively improved. The buffer ring is removed, so that the situation that the organic metal source carried by the airflow or the waste gas dust existing in the waste gas remains on the buffer ring to influence the flow of the airflow can be avoided, the smoothness of the airflow can be ensured, and the airflow blockage caused by the impurities or the organic metal source can be reduced. The removal of the buffer ring can also reduce the preparation cost of the MOCVD equipment and omit the maintenance cost required by the buffer ring, thereby effectively reducing the preparation cost and the maintenance cost of the MOCVD equipment.

Optionally, step S104 includes: and growing the epitaxial structure at a growth rotation speed of 0-1250.

When the epitaxial tray grows the epitaxial structure at the growth rotating speed within the range, the growth rate of the epitaxial structure can be accelerated without influencing the quality of the finally obtained epitaxial structure on the premise that the gas fluency in the reaction cavity is improved, and the growth efficiency of the epitaxial structure is effectively improved.

Exemplarily, step S104 may further include: when the epitaxial structure provided by the present disclosure is a gallium nitride epitaxial structure, for example, when the epitaxial structure includes an n-type GaN layer, a multi-quantum well layer and a p-type GaN layer stacked on a substrate in sequence, the growth rotation speed of the n-type GaN layer may be 550 to 650r/min, the growth rotation speed of the multi-quantum well layer may be 550 to 650r/min, and the growth rotation speed of the p-type GaN layer may be 1150 to 1250 r/min.

The growth rotating speeds of the n-type GaN layer, the multi-quantum well layer and the p-type GaN layer are within the ranges, the growth rotating speed of the epitaxial structure is obviously improved compared with that of the epitaxial structure in the traditional growth mode, and the growth efficiency of the finally obtained epitaxial structure can be effectively improved on the premise of ensuring the quality of the epitaxial structure.

Although the present disclosure has been described with reference to specific embodiments, it will be understood by those skilled in the art that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the disclosure.

Claims

1. A metal organic chemical vapor deposition device is characterized by comprising a reaction chamber, a growth part, a heating part and a regulating part,

2. The metalorganic chemical vapor deposition apparatus of claim 1, wherein the annular baffle has an axial height of 8cm to 10 cm.

3. The mocvd apparatus according to claim 1, wherein the adjustment member further comprises an annular molybdenum shield coaxial with the annular baffle, one end of the annular molybdenum shield is connected to the bottom of the reaction chamber, an outer circumferential wall of the annular molybdenum shield is attached to an inner circumferential wall of the annular baffle, and the annular molybdenum shield is sleeved on the heating member.

4. The metal organic chemical vapor deposition device according to claim 3, wherein the heating member comprises a heating wire and a heating support, the heating support is connected with the reaction chamber, the heating wire is connected with the heating support and is located between the heating support and the epitaxial tray, and the distance between the heating support and the inner peripheral wall of the annular molybdenum cover is 4-6 mm.

5. The metal organic chemical vapor deposition apparatus according to claim 4, wherein a minimum distance between the epitaxial tray and the heating wire is 9mm to 10 mm.

6. The MOCVD apparatus according to any one of claims 3 to 5, wherein the adjustment unit further includes a gas discharge ring having an inner peripheral wall coaxially connected to an outer peripheral wall of the annular molybdenum cap, the gas discharge ring having a plurality of gas discharge holes in a circumferential direction, and a difference between a minimum distance between the gas discharge holes and an axis of the gas discharge ring and an outer diameter of the annular molybdenum cap is 2.5mm to 3.5 mm.

7. The MOCVD apparatus according to claim 6, wherein the diameter of the exhaust hole is 25 to 35 mm.

8. The MOCVD apparatus according to claim 6, wherein the plurality of exhaust holes are equally spaced along a circumferential direction of the exhaust ring, and a distance between adjacent two exhaust holes is 23cm to 26 cm.

9. A use method of a metal organic chemical vapor deposition device is characterized by comprising the following steps:

providing the metalorganic chemical vapor deposition apparatus of claim 1;

and growing an epitaxial structure on the surface of the epitaxial substrate.

10. The use method of the metal organic chemical vapor deposition apparatus according to claim 9, wherein the epitaxial structure is grown at a growth rotation speed of 500 to 1250.