CN113913781A - Diamond film processing method and device - Google Patents
Diamond film processing method and device Download PDFInfo
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- CN113913781A CN113913781A CN202111183392.6A CN202111183392A CN113913781A CN 113913781 A CN113913781 A CN 113913781A CN 202111183392 A CN202111183392 A CN 202111183392A CN 113913781 A CN113913781 A CN 113913781A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/271—Diamond only using hot filaments
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
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- Chemical & Material Sciences (AREA)
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- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a diamond film processing method and a device, wherein hot wires which are parallel to each other are arranged on two transverse sides of a workpiece, the hot wires are used for heating so as to deposit and process a diamond film in a region to be processed of the workpiece, in the deposition processing process, the workpiece rotates along the vertical direction, and the hot wires reciprocate along the height direction or the workpiece reciprocates along the height direction. The invention can enable the heat generated by the hot wire to uniformly cover the to-be-processed area of the workpiece, improve the uniform heating of the workpiece, ensure that each part of the to-be-processed area of the workpiece can be uniformly heated by the hot wire, ensure the generation quality of the diamond film, improve the thickness uniformity of the film and the binding force between the film and the substrate, prepare the diamond film with high wear resistance on the surface of the special-shaped workpiece or the large-size workpiece, and greatly improve the service life of the workpiece.
Description
Technical Field
The invention relates to the technical field of diamond coating processing, in particular to a method and a device for processing a diamond film.
Background
The surface treatment technology is characterized in that a special process method is utilized to prepare a protective coating with special chemical, mechanical, electrical, thermal and optical properties on the surface of a substrate, so that the product quality can be greatly improved, the surface compounding of materials is realized, and the problem which cannot be solved by a single material is solved, thereby prolonging the service life of the product, enhancing the surface wear resistance of the product, enhancing the corrosion resistance of the product and enhancing the market competitiveness of the product. One of the surface treatment techniques is chemical vapor deposition processing of diamond coatings, which utilizes various energy sources such as heating, plasma excitation or light radiation to react gaseous or vapor state chemical substances in a device at a solid interface to form a diamond film coating.
In various industries, special-shaped workpieces or large-size workpieces different from standard parts are commonly used, in order to enhance the surface performance of the special-shaped workpieces and the large-size workpieces, the special-shaped workpieces and the large-size workpieces are usually made of hard alloy materials or ceramic materials, but the hardness and the wear resistance of the materials are greatly different compared with diamond, and the diamond coating is difficult to process on the surfaces of the special-shaped workpieces and the large-size workpieces, so that the diamond coating is difficult to effectively and uniformly generate due to the influence of the surface shapes of the special-shaped workpieces and the large-size workpieces, and the service performance is influenced.
Disclosure of Invention
The invention aims to solve the technical problems and provide a diamond film processing method which aims to improve the prior art and solve the problems that the diamond film processing is difficult to be carried out on special-shaped workpieces or large-size workpieces and the processing quality of the diamond film is difficult to be ensured in the prior art.
In order to solve the technical problems, the technical scheme of the invention is as follows:
a diamond film processing method comprising:
arranging parallel hot wires on two transverse sides of the workpiece;
the hot wire is heated to deposit and process a diamond film in a region to be processed of the workpiece, in the deposition processing process, the workpiece rotates along the vertical direction, and the hot wire reciprocates along the height direction or the workpiece reciprocates along the height direction.
According to the diamond film processing method, the processing quality is improved through the rotation of the workpiece and the relative movement between the workpiece and the hot wire in the deposition processing process, so that the heat generated by the hot wire uniformly covers the area to be processed of the workpiece, the uniform heating of the workpiece is improved, and all parts of the area to be processed of the workpiece can be uniformly heated by the hot wire, so that the generation quality of the diamond film is guaranteed, the thickness uniformity of the film and the binding force between the film and a substrate are improved, the condition that the workpiece is burnt due to excessive local heating and even the workpiece is contacted with the hot wire is avoided, the damage rate is reduced, the yield is improved, and the yield is improved.
Further, the workpiece is pretreated before deposition processing, and the pretreatment comprises:
and soaking the workpiece in an alkaline solution to coarsen the region to be processed of the workpiece. After the to-be-processed area of the workpiece is subjected to roughening treatment, the bonding force between the diamond film and the surface of the to-be-processed area of the workpiece is improved, the diamond film is prevented from being stripped from the workpiece and falling off, the processing quality of the diamond film is improved, the durability is improved, and the service life of the workpiece is prolonged.
Further, the alkaline solution comprises 70-95 parts by weight of H2O, 3-25 parts of K3[Fe(CN)6]And 5-25 parts of NaOH or KOH by mass percentage, the roughening treatment efficiency on the to-be-processed area of the workpiece is high, the effect is good, and the bonding force between the diamond film and the surface of the to-be-processed area of the workpiece is ensured.
Furthermore, the deposition processing process comprises the stages of carbonization, nucleation, growth and temperature reduction,
in the carbonization stage, the temperature of the hot wire is 1600-1800 ℃ and the temperature of the hot wire is transferredIn CH4/H2The gas concentration is 3.0-5%, the deposition pressure is 2000-2500Pa, and the time lasts for 20-120 minutes, so that the hot wire is fully carbonized, the hot wire can stably and uniformly heat the workpiece, and the diamond film is uniformly generated;
in the nucleation stage, the temperature of the hot wire is 1800-4/H2The gas concentration is 2.0-6%, the deposition pressure is 1500-2500Pa, the time lasts 30-120 minutes, and the diamond film is a frame for depositing compact diamond film structure diamond crystals, thereby ensuring the processing quality of the diamond film.
Furthermore, in the growth stage, a micron crystal deposition process and/or a nanometer crystal deposition process are/is adopted,
the microcrystalline deposition process comprises the steps of heating the filament at 1800-2200 ℃ and inputting CH4/H2The gas concentration is 0.5-1.5%, the deposition pressure is 2000-4000Pa, and the time lasts 15-120 minutes;
the nanocrystal deposition process comprises the steps of heating the filament at 1800-2200 ℃, and inputting CH4/H2The gas concentration is 2.0-6%, the deposition pressure is 800-1800Pa, and the time lasts 15-120 minutes.
The micron-crystal deposition process is used for processing a micron-crystal diamond film, the nano-crystal deposition process is used for processing a nano-crystal diamond film, the micron-crystal deposition process and the nano-crystal deposition process are combined to process a micron-crystal diamond and nano-crystal diamond alternate composite film, and selection is performed according to actual needs.
Furthermore, in the cooling stage, the processing power of the hot wire is gradually reduced according to a preset amplitude until the hot wire is completely closed, and the slow cooling mode is adopted, so that the deposition processing quality is improved, and the quality of the diamond film is guaranteed.
Furthermore, the hot wires are arranged in parallel in the transverse direction at intervals, a plurality of workpieces are arranged between at least two adjacent hot wires at intervals, large-scale batch production is achieved, each workpiece is independently movably adjusted in the deposition processing process, the processing quality is guaranteed while the yield is improved, the yield is effectively improved, batch production is truly achieved, workpieces of different specifications and shapes can be simultaneously processed, and the diversity and flexible adaptability of product preparation are improved.
Furthermore, the hot wires are arranged in a plurality of layers at intervals in the height direction, more areas to be processed of the workpiece can be covered at the same time, the deposition efficiency is improved, the intervals of the hot wires in each layer in the height direction are equal or unequal, and the hot wires are flexibly arranged according to the processing requirements.
Furthermore, a plurality of workpieces are simultaneously processed by diamond films, in the deposition processing process, each workpiece independently rotates along the vertical direction, and each workpiece independently reciprocates along the height direction. Batch processing is realized, independent movable adjustment is carried out on each workpiece in the deposition processing process, the yield is improved, and the processing quality is guaranteed.
The utility model provides a diamond film processingequipment, includes workstation and heater subassembly, the workstation is used for the clamping work piece, be provided with slewing mechanism on the workstation in order to drive every work piece along vertical independent rotation, and be provided with elevating system on the workstation in order to drive every work piece independent up-and-down reciprocating motion, the heater subassembly includes the heater, arranges respectively in the horizontal both sides of work piece the heater to the heater is parallel to each other. The diamond film processing device drives the workpiece to rotate and reciprocate to lift through the workbench, so that heat generated by the hot wire uniformly covers the to-be-processed area of the workpiece, the uniform heating of the workpiece is improved, and all parts of the to-be-processed area of the workpiece can be uniformly heated by the hot wire, thereby ensuring the generation quality of the diamond film, improving the thickness uniformity of the film and the binding force between the film and a substrate, avoiding the situation that the workpiece is burnt due to excessive local heating and even the contact with the hot wire, reducing the damage rate, improving the yield and being beneficial to improving the productivity.
Furthermore, the hot wires are arranged in parallel along the transverse direction at intervals, a plurality of working tables distributed at intervals are arranged between at least two adjacent hot wires, large-scale batch production is realized, each workpiece is independently movably adjusted in the deposition processing process, the processing quality is guaranteed while the yield is improved, the yield is effectively improved, and the batch production is really realized.
Compared with the prior art, the invention has the advantages that:
the diamond film processing method and the diamond film processing device have the advantages that the workpiece rotates automatically and the workpiece and the hot wire move relatively in the deposition processing process, so that heat generated by the hot wire uniformly covers the to-be-processed area of the workpiece, the heating uniformity of the workpiece is improved, all parts of the to-be-processed area of the workpiece can be uniformly heated by the hot wire, the generation quality of the diamond film is guaranteed, the thickness uniformity of the film and the binding force between the film and a substrate are improved, the diamond film with high wear resistance can be prepared on the surface of a special-shaped workpiece or a large-size workpiece, and the service life of the workpiece is greatly prolonged.
Drawings
Fig. 1 is a schematic structural view of a diamond film processing apparatus according to the present invention.
In the figure:
a workpiece 1, a hot wire 2 and a workbench 3.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The diamond film processing method and the diamond film processing device disclosed by the embodiment of the invention are convenient and efficient to implement, can effectively ensure the processing quality of processing the diamond film on the special-shaped workpiece or the large-size workpiece, and improve the processing uniformity of the diamond film and the binding force between the diamond film and a substrate.
A diamond film processing method comprises the following steps:
the workpiece 1 is pretreated, firstly, the workpiece is cleaned, and then the workpiece 1 is placed into an alkaline solution to be soaked so as to treat the area to be processed of the workpiece 1Roughening treatment is carried out, and the alkaline solution comprises 70-95 parts by weight of H2O, 3-25 parts of K3[FeCN6]The mass percentage of the NaOH or KOH is 5-25 parts, only the area of the workpiece needing to generate the diamond film is coarsened, the area of the workpiece not to be processed with the diamond film is protected, the area to be processed of the workpiece is coarsened, the bonding force between the diamond film and the surface of the area to be processed of the workpiece can be improved, the diamond film is ensured to be stably attached and fixed on the workpiece, the durability of the diamond film is ensured, and the service life of the workpiece is prolonged;
during the diamond film deposition processing, a workpiece is placed in a chemical vapor deposition processing device, specifically, the chemical vapor deposition processing device mainly comprises a reaction chamber, the reaction chamber is provided with a vacuum component for pumping air and an inflation component for conveying reaction gas into the reaction chamber, the reaction chamber is also provided with a hot wire for heating, after the workpiece is placed in the reaction chamber, the workpiece is heated by the hot wire, so that the reaction gas chemically vapor-deposits a diamond film in a region to be processed of the workpiece, the workpiece is a special-shaped workpiece or a large-size workpiece, the traditional device for processing the diamond film on a wire drawing die is not applicable any more, in the embodiment, the hot wires 2 which are parallel to each other are arranged on two transverse sides of the workpiece 1, so that the workpiece is heated by the hot wires on two sides of the workpiece simultaneously, the heating uniformity is improved, and the heating efficiency is improved;
the hot wire 2 is heated to process a diamond film in a to-be-processed area of the workpiece 1 through chemical vapor deposition, in the deposition processing process, the workpiece 1 rotates vertically, so that the whole circumference of the workpiece 1 is effectively heated by the hot wires on two sides, the heating uniformity is improved, in addition, the hot wire 2 reciprocates along the height direction or the workpiece 1 reciprocates along the height direction, so that the hot wires can uniformly cover the whole height range of the workpiece, finally, the whole workpiece is uniformly heated, further, the diamond film is uniformly generated in the to-be-processed area of the workpiece, the film thickness uniformity and the bonding force of the film and a substrate are improved, whether the workpiece is in contact with the hot wires or not needs to be observed in the whole deposition processing process, and the situation that the workpiece is burnt due to excessive local heating and even contact with the hot wires needs to be avoided, the damage rate is reduced, the yield is improved, and the productivity is improved.
Specifically, the deposition processing process comprises the stages of carbonization, nucleation, growth and temperature reduction,
in the carbonization stage, the temperature of the hot wire is 1600-1800 ℃, and CH is input4/H2The gas concentration is 3.0-5%, the deposition pressure is 2000-2500Pa, the time lasts for 20-120 minutes, the power supply power of the hot wire is slowly increased, the hot wire is ensured to be fully carbonized, the temperature of the hot wire is ensured to be stable, so that the workpiece can be stably and uniformly heated, and the deposition uniformity of the diamond film is improved;
in the nucleation stage, the temperature of the hot wire is 1800-4/H2The gas concentration is 2.0-6%, the deposition pressure is 1500-2500Pa, the time lasts 30-120 minutes, in the nucleation stage, the workpiece 1 needs to be maintained to rotate vertically, and the workpiece 1 reciprocates along the height direction, so that the diamond film is uniformly deposited in the region to be processed of the workpiece;
in the growth stage, a micron crystal deposition process and/or a nano crystal deposition process are/is adopted,
the microcrystalline deposition process comprises the steps of heating the filament at 1800-2200 ℃ and inputting CH4/H2The gas concentration is 0.5-1.5%, the deposition pressure is 2000-4000Pa, and the time lasts 15-120 minutes;
the nanocrystal deposition process comprises the steps of heating the filament at 1800-2200 ℃, and inputting CH4/H2The gas concentration is 2.0-6%, the deposition pressure is 800-1800Pa, and the time lasts 15-120 minutes;
the method is characterized in that a micron-crystal diamond film is processed by a micron-crystal deposition process, a nano-crystal diamond film is processed by a nano-crystal deposition process, a micron-crystal diamond and nano-crystal diamond alternate composite film is processed by combining the micron-crystal deposition process and the nano-crystal deposition process, the three films are flexibly selected according to actual needs, and the total processing time is 240-640 minutes.
The stage of cooling adopts the slow cooling mode, reduces the processing power of heater 2 until closing completely according to predetermineeing the range gradually, predetermineeing the range and including power amplitude of drop and time interval, the process of control temperature drop avoids the situation that the fracture appears in the diamond film, ensures the quality of diamond film.
In order to improve the processing efficiency, the hot wires 2 are arranged in a plurality of layers at intervals along the height direction of the workpiece, more areas to be processed of the workpiece can be covered at the same time, the distance between every two layers of hot wires 2 in the height direction is equal or unequal, and flexible adjustment is carried out according to the actual situation; the hot wires 2 of each layer are parallel to each other, and the hot wires 2 can be adjusted along the horizontal plane or inclined to the horizontal plane according to the process requirements, and the hot wires can use high-temperature resistant hot wires with different diameters or high-temperature resistant hot wires made of different materials and are adjusted according to the process parameters;
in order to improve the overall processing efficiency and the productivity, the hot wires 2 are arranged in parallel at intervals in the transverse direction, a plurality of workpieces 1 are arranged between every two adjacent hot wires 2 at intervals, that is, the workpieces 1 are arranged in a line along a straight line, diamond film processing is performed on the workpieces simultaneously, and the workpieces 1 can be arranged in multiple lines, so that the productivity is further improved.
As shown in fig. 1, the diamond thin film processing device based on the diamond thin film processing method mainly comprises a workbench 3 and hot wire assemblies, wherein the workbench 3 and the hot wire assemblies are arranged in a reaction chamber of the chemical vapor deposition processing device, the workbench 3 is used for clamping workpieces 1, a plurality of the workbench 3 are arranged in the reaction chamber, each workbench 3 is provided with a rotating mechanism to drive each workpiece to rotate vertically and independently, each workbench 3 is also provided with a lifting mechanism to drive each workpiece 1 to reciprocate up and down independently, each hot wire assembly mainly comprises a hot wire 2, the hot wires 2 are respectively arranged on two transverse sides of each workpiece 1, and the hot wires 2 are parallel to each other;
in this embodiment, a plurality of hot wires 2 are arranged in parallel along the transverse direction at intervals, a plurality of work tables 3 distributed at intervals are arranged between two adjacent hot wires 2, and each work table 3 works independently and respectively drives a workpiece clamped on the work table to rotate and reciprocate up and down;
the hot wire component further comprises a positive electrode and a negative electrode, two ends of the hot wire 2 are respectively connected with the positive electrode and the negative electrode, the positive electrode and the negative electrode electrify the hot wire to heat the hot wire, the positive electrode and the negative electrode are detachably arranged in the reaction chamber, the heights of the positive electrode and the negative electrode are variable, the positive electrode is as high as the negative electrode, the positive electrode is higher than the negative electrode, or the negative electrode is higher than the positive electrode, so that the hot wire is distributed along a horizontal plane or inclined to the horizontal plane, and the hot wire is flexibly adjusted according to the process.
The above is only a preferred embodiment of the present invention, and it should be noted that the above preferred embodiment should not be considered as limiting the present invention, and the protection scope of the present invention should be subject to the scope defined by the claims. It will be apparent to those skilled in the art that various modifications and adaptations can be made without departing from the spirit and scope of the invention, and these modifications and adaptations should be considered within the scope of the invention.
Claims (11)
1. A diamond film processing method is characterized by comprising the following steps:
arranging parallel hot wires (2) on two transverse sides of the workpiece (1);
the hot wire (2) is heated to deposit and process a diamond film in a region to be processed of the workpiece (1), in the deposition processing process, the workpiece (1) rotates along the vertical direction, and the hot wire (2) reciprocates along the height direction or the workpiece (1) reciprocates along the height direction.
2. The diamond film machining method according to claim 1, wherein the work (1) is subjected to a pretreatment before the deposition process, the pretreatment comprising:
and the workpiece (1) is soaked in an alkaline solution to coarsen the region to be processed of the workpiece (1).
3. The diamond film processing method according to claim 2, wherein the composition of the alkaline solution comprises 70 to 95 parts by weight of H2O, 3-25 parts of K3[Fe(CN)6]5 to 25 weight percent of NaOH or KOH.
4. The diamond film processing method according to claim 1, wherein the deposition process comprises the stages of carbonization, nucleation, growth, and temperature reduction,
in the carbonization stage, the temperature of the hot wire is 1600-1800 ℃, and CH is input4/H2The gas concentration is 3.0-5%, the deposition pressure is 2000-2500Pa, and the time lasts 20-120 minutes;
in the nucleation stage, the temperature of the hot wire is 1800-4/H2The gas concentration is 2.0-6%, the deposition pressure is 1500-2500Pa, and the time lasts 30-120 minutes.
5. The diamond film processing method according to claim 4, wherein in the growth stage, a micron crystal deposition process and/or a nanometer crystal deposition process is adopted,
the microcrystalline deposition process comprises the steps of heating the filament at 1800-2200 ℃ and inputting CH4/H2The gas concentration is 0.5-1.5%, the deposition pressure is 2000-4000Pa, and the time lasts 15-120 minutes;
the nanocrystal deposition process comprises the steps of heating the filament at 1800-2200 ℃, and inputting CH4/H2The gas concentration is 2.0-6%, the deposition pressure is 800-1800Pa, and the time lasts 15-120 minutes.
6. The diamond film machining method according to claim 4, wherein in the stage of cooling down, the machining power of the hot wire (2) is gradually reduced by a preset magnitude until completely shut down.
7. The diamond film machining process according to any one of claims 1 to 6, wherein the hot wires (2) are arranged in parallel in a plurality of rows along the transverse direction, and wherein a plurality of workpieces (1) are arranged between at least two adjacent hot wires (2) in a spaced manner.
8. The diamond film processing technology according to any one of claims 1 to 6, wherein the hot wires (2) are arranged in a plurality of layers at intervals along the height direction, and the intervals of the hot wires (2) in each layer are equal or unequal in the height direction.
9. The diamond film machining process according to any one of claims 1 to 6, wherein a plurality of the work pieces (1) are subjected to diamond film machining simultaneously, each of the work pieces (1) is independently rotated in a vertical direction during the deposition machining, and each of the work pieces (1) is independently reciprocated in a height direction.
10. The utility model provides a diamond film processingequipment, its characterized in that, includes workstation (3) and heater subassembly, workstation (3) are used for clamping work piece (1), be provided with slewing mechanism on workstation (3) in order to drive every work piece (1) along vertical independent rotation, and be provided with elevating system on workstation (3) in order to drive every work piece (1) independent up-and-down reciprocating motion, the heater subassembly includes heater (2), arranges respectively in the horizontal both sides of work piece (1) heater (2) to heater (2) are parallel to each other.
11. The diamond film processing apparatus according to claim 10, wherein said hot wires (2) are arranged in parallel in a plurality of rows in the transverse direction, and wherein a plurality of stages (3) are arranged in a row in a spaced manner between at least two adjacent hot wires (2).
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| CN202111183392.6A CN113913781A (en) | 2021-10-11 | 2021-10-11 | Diamond film processing method and device |
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| CN206635408U (en) * | 2017-03-03 | 2017-11-14 | 深圳先进技术研究院 | Heated filament carrier and deposition of diamond thin films equipment |
| CN107513696A (en) * | 2017-09-12 | 2017-12-26 | 张家港市微纳新材料科技有限公司 | The method of diamond coatings brill/milling cutter grinding pretreatment |
| CN110468386A (en) * | 2018-05-11 | 2019-11-19 | 深圳先进技术研究院 | Heated filament fixture and hot filament deposit equipment are applied with it and the preparation method of cutter |
| CN109371380A (en) * | 2018-12-05 | 2019-02-22 | 中国科学院金属研究所 | A kind of hot-wire chemical gas-phase deposition device of Multifunctional diamond film |
| CN209522918U (en) * | 2018-12-05 | 2019-10-22 | 中国科学院金属研究所 | A kind of hot-wire chemical gas-phase deposition device of Multifunctional diamond film |
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