CN113903832B - Alkali polishing method for crystal silicon surface battery - Google Patents
Alkali polishing method for crystal silicon surface battery Download PDFInfo
- Publication number
- CN113903832B CN113903832B CN202111494449.4A CN202111494449A CN113903832B CN 113903832 B CN113903832 B CN 113903832B CN 202111494449 A CN202111494449 A CN 202111494449A CN 113903832 B CN113903832 B CN 113903832B
- Authority
- CN
- China
- Prior art keywords
- silicon wafer
- polycrystalline silicon
- polishing
- solution
- triazine derivative
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 117
- 238000000034 method Methods 0.000 title claims abstract description 63
- 239000003513 alkali Substances 0.000 title claims abstract description 51
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 32
- 229910052710 silicon Inorganic materials 0.000 title claims description 32
- 239000010703 silicon Substances 0.000 title claims description 32
- 239000013078 crystal Substances 0.000 title claims description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 104
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims abstract description 74
- 150000003918 triazines Chemical class 0.000 claims abstract description 55
- 238000004140 cleaning Methods 0.000 claims abstract description 54
- XUJNEKJLAYXESH-REOHCLBHSA-N L-Cysteine Chemical compound SC[C@H](N)C(O)=O XUJNEKJLAYXESH-REOHCLBHSA-N 0.000 claims abstract description 50
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims abstract description 48
- 239000004201 L-cysteine Substances 0.000 claims abstract description 26
- 235000013878 L-cysteine Nutrition 0.000 claims abstract description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 22
- MGNCLNQXLYJVJD-UHFFFAOYSA-N cyanuric chloride Chemical compound ClC1=NC(Cl)=NC(Cl)=N1 MGNCLNQXLYJVJD-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 12
- 239000000203 mixture Substances 0.000 claims abstract description 12
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 11
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 11
- 239000000460 chlorine Substances 0.000 claims abstract description 8
- 229910052801 chlorine Inorganic materials 0.000 claims abstract description 8
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims abstract description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 45
- 239000008367 deionised water Substances 0.000 claims description 42
- 229910021641 deionized water Inorganic materials 0.000 claims description 42
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 34
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 32
- 239000002253 acid Substances 0.000 claims description 18
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 16
- 239000007788 liquid Substances 0.000 claims description 15
- 238000002156 mixing Methods 0.000 claims description 15
- -1 5-nitrofuran-2-formylhydrazine Chemical compound 0.000 claims description 10
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 8
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 8
- 238000006243 chemical reaction Methods 0.000 abstract description 26
- 238000002310 reflectometry Methods 0.000 abstract description 21
- 238000002161 passivation Methods 0.000 abstract description 19
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 abstract description 15
- 230000002035 prolonged effect Effects 0.000 abstract description 4
- 239000000243 solution Substances 0.000 description 108
- 235000012431 wafers Nutrition 0.000 description 101
- 230000000052 comparative effect Effects 0.000 description 55
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 43
- 239000010408 film Substances 0.000 description 39
- 229920005591 polysilicon Polymers 0.000 description 24
- 238000012360 testing method Methods 0.000 description 16
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 15
- 239000010409 thin film Substances 0.000 description 15
- 238000002360 preparation method Methods 0.000 description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 11
- 239000005457 ice water Substances 0.000 description 9
- 238000000231 atomic layer deposition Methods 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- 238000001035 drying Methods 0.000 description 7
- 239000011259 mixed solution Substances 0.000 description 7
- HRYYAHKXNSUDFH-UHFFFAOYSA-N 5-nitrofuran-2-carbohydrazide Chemical compound NNC(=O)C1=CC=C([N+]([O-])=O)O1 HRYYAHKXNSUDFH-UHFFFAOYSA-N 0.000 description 6
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 4
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 4
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 238000004506 ultrasonic cleaning Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 230000002378 acidificating effect Effects 0.000 description 3
- 238000009472 formulation Methods 0.000 description 3
- 239000003208 petroleum Substances 0.000 description 3
- 239000002244 precipitate Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Natural products CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 125000000415 L-cysteinyl group Chemical group O=C([*])[C@@](N([H])[H])([H])C([H])([H])S[H] 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 125000001309 chloro group Chemical group Cl* 0.000 description 2
- 235000019441 ethanol Nutrition 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- OKKJLVBELUTLKV-UHFFFAOYSA-N methanol Natural products OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 125000001424 substituent group Chemical group 0.000 description 2
- 238000010301 surface-oxidation reaction Methods 0.000 description 2
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910000939 field's metal Inorganic materials 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000004298 light response Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/403—Oxides of aluminium, magnesium or beryllium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Manufacturing & Machinery (AREA)
- Sustainable Energy (AREA)
- Inorganic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Weting (AREA)
Abstract
The invention discloses an alkali polishing method for a cell on the surface of crystalline silicon, belongs to the technical field of crystalline silicon treatment, and particularly relates to a method for cleaning a polycrystalline silicon wafer to obtain a treated polycrystalline silicon wafer, wherein a silicon dioxide oxide layer is not formed on the polycrystalline silicon wafer; treating the treated polycrystalline silicon wafer in polishing solution to obtain a polished polycrystalline silicon wafer; the polishing solution contains tetramethylammonium hydroxide, isopropanol and a triazine derivative, wherein the triazine derivative is a mixture of substitutes of cyanuric chloride, chlorine of which is substituted by at least one L-cysteine. The reflectivity of the polished surface of the polycrystalline silicon wafer polished by the alkali polishing solution is improved by 6-15%; the minority carrier lifetime of the battery piece coated with the aluminum oxide passivation film is prolonged by 30-60%; the conversion efficiency of the cell coated with the aluminum oxide passivation film is improved by 0.1-0.7%.
Description
Technical Field
The invention belongs to the technical field of crystalline silicon processing, and particularly relates to an alkali polishing method for a cell on the surface of crystalline silicon.
Background
Solar photovoltaic power generation has great application prospect, the development trend of the current photovoltaic industry is to improve efficiency and reduce cost, the efficiency of a battery with a conventional structure has no great space, a high-efficiency crystalline silicon battery becomes the mainstream of market research and development, and only the back passivation technology can maximize the performance of the battery on the basis of keeping the cost flat by researching various P-type high-efficiency batteries existing in the current market. The technology has the advantages of high product efficiency, high voltage opening, low packaging loss and better weak light response, and is a strategic product for seizing the mainstream market.
The PERC battery back passivation technology is to deposit a layer of Al on the back surface of the battery2O3Film, mainlyBy Al2O3The film is rich in the characteristic of negative charge to realize good passivation effect on the back surface, then laser grooving is carried out on the back surface passivation laminated film, an electrode is printed on the grooved passivation film, and ohmic contact can be formed between the metal electrode and silicon through grooving, so that a photon-generated carrier is effectively collected. The contribution of the PERC battery back passivation technology to the electrical performance is mainly reflected in the great improvement of open-circuit voltage and short-circuit current, and the common efficiency of the single crystal PERC battery in the industry at present can reach 20.6-20.9%.
The current PERC battery process production flow is as follows: the method comprises the following steps of wet alkali texturing, low-pressure diffusion, etching and polishing, ALD (atomic layer deposition) aluminum oxide coating, PECVD (plasma enhanced chemical vapor deposition) forward/reverse silicon nitride coating, laser back grooving, printing and sintering, testing and sorting, and the working procedures of polishing, ALD aluminum oxide coating, PECVD (plasma enhanced chemical vapor deposition) back coating, back laser grooving and the like are added on the basis of the conventional crystalline silicon cell process. The back polishing process is a polishing treatment before film coating is carried out on the back of the silicon wafer, the surface of the polished back is flat, the reflection of light in a long-wave band in a solar spectrum on the back surface of the silicon wafer is increased, the transmitted light is increased and returns to the interior of the silicon wafer for secondary absorption, the IQE is improved, and the output current is increased; meanwhile, the specific surface area of the back surface of the polished silicon wafer is reduced, so that the composition of photon-generated carriers on the back surface is reduced, the minority carrier lifetime is prolonged, and the passivation effect is improved; the aluminum aggregate generated after printing and sintering the back surface field of the polished silicon wafer is more easily contacted with silicon, so that the effective area of the back surface field alloy layer is increased.
Disclosure of Invention
The invention aims to provide an alkali polishing method for a crystalline silicon surface battery of a polycrystalline silicon wafer with high reflectivity and high flatness.
The technical scheme adopted by the invention for realizing the purpose is as follows:
an alkali polishing method for a crystal silicon surface battery comprises the following steps:
cleaning the polycrystalline silicon wafer to obtain a processed polycrystalline silicon wafer, wherein the polycrystalline silicon wafer is free of a silicon dioxide oxide layer;
treating the treated polycrystalline silicon wafer in polishing solution to obtain a polished polycrystalline silicon wafer; the polishing solution contains tetramethylammonium hydroxide, isopropanol and a triazine derivative, wherein the triazine derivative is obtained by substituting chlorine on cyanuric chloride by at least one L-cysteine. In the production and preparation of taking a silicon wafer as a battery, the back of the silicon wafer needs to be polished, the flatness of the back of the silicon wafer is improved, the reflection of light in a long-wave band in a solar spectrum on the back surface of the silicon wafer can be increased, the transmitted light is increased and returned to the interior of the silicon wafer for secondary absorption, the IQE is improved, the output current is increased, when the back of the silicon wafer is polished by using alkali liquor, alkali liquor with high concentration is usually used, for example, the concentration of sodium hydroxide can be up to 30-40wt%, in order to reduce the use amount of the alkali, tetramethylammonium hydroxide can be used for polishing the silicon wafer instead of sodium hydroxide solution, but the tetramethylammonium hydroxide is not friendly to living and natural environments, the concentration of the actually used tetramethylammonium hydroxide is between 10 and 25wt%, the invention can further reduce the use amount of the tetramethylammonium hydroxide by combining the tetramethylammonium hydroxide, isopropanol and triazine derivatives, the obtained alkali polishing solution has good silicon wafer polishing treatment effect, can improve the reflectivity of a polished silicon surface, and improves the minority carrier lifetime and conversion efficiency of a battery piece after the battery piece is formed by coating aluminum oxide.
Preferably, the triazine derivative is a mixture of substituents derived from cyanuric chloride in which at least one chlorine is substituted by L-cysteine.
Preferably, the cleaning process removes the silicon dioxide oxide layer using a hydrofluoric acid solution.
Preferably, an alkali cleaning solution and an acid cleaning solution are used for cleaning the polycrystalline silicon wafer in the cleaning treatment; the alkali cleaning solution is formed by mixing ammonia water, hydrogen peroxide and deionized water, and the acid cleaning solution is formed by mixing hydrochloric acid, hydrogen peroxide and deionized water.
Preferably, in the silicon wafer cleaning, the polycrystalline silicon wafer is placed in an alkali cleaning solution, cleaned for 10-30min at the temperature of 70-90 ℃, rinsed by deionized water, then placed in an acid cleaning solution, ultrasonically cleaned for 10-30min at the temperature of 70-90 ℃, ultrasonically cleaned for 10-30min in deionized water, and dried by nitrogen gas to obtain the cleaned polycrystalline silicon wafer.
More preferably, in the silicon wafer cleaning, the alkali cleaning solution is formed by mixing ammonia water, hydrogen peroxide and deionized water, the usage amount of the ammonia water in the alkali cleaning solution is 10-25wt% of the deionized water, and the usage amount of the hydrogen peroxide in the alkali cleaning solution is 10-25wt% of the deionized water.
More preferably, in the silicon wafer cleaning, the acid cleaning solution is formed by mixing hydrochloric acid, hydrogen peroxide and deionized water, the usage amount of the hydrochloric acid in the acid cleaning solution is 10-20wt% of the deionized water, and the usage amount of the hydrogen peroxide in the acid cleaning solution is 10-20wt% of the deionized water.
Preferably, in the removal of the surface oxide layer, the cleaned polycrystalline silicon wafer is added into hydrofluoric acid solution for ultrasonic cleaning for 5-10min, then ultrasonic cleaning is carried out in deionized water for 5-30min, and nitrogen is blown dry to obtain the polycrystalline silicon wafer with the surface silicon dioxide oxide layer removed.
More preferably, in the removing of the surface oxide layer, the hydrofluoric acid solution is composed of hydrofluoric acid and deionized water, and the usage amount of hydrofluoric acid in the hydrofluoric acid solution is 20-30wt% of deionized water.
Preferably, the polishing solution contains 5-nitrofuran-2-formylhydrazine.
Preferably, the alkali polishing method of the crystalline silicon surface battery further comprises the preparation of the triazine derivative.
More preferably, in the preparation of the triazine derivative, cyanuric chloride is added into an alkaline ice water mixed solution, the mixture is stirred to be mixed into slurry, L-cysteine solution is dropwise added, after the dropwise addition is finished, the pH value is adjusted to be alkaline at the temperature of 30-50 ℃, the reaction lasts for 3-8h, the reaction lasts for 2-5h at the temperature of 50-70 ℃, after the reaction is finished, the pH value is adjusted to be acidic at the temperature of 1-3, precipitate is separated out, and the triazine derivative is obtained by washing with water and petroleum ether and drying.
Still more preferably, in the preparation of the triazine derivative, the amount of cyanuric chloride added is 3-9wt% of the ice-water mixed liquid.
Still more preferably, in the preparation of the triazine derivative, the L-cysteine solution is obtained by dissolving L-cysteine in 1 to 3wt% sodium hydroxide solution.
Still more preferably, the triazine derivative is prepared such that the L-cysteine solution has an L-cysteine content of 1 to 4 wt%.
Still more preferably, in the preparation of the triazine derivative, the amount of the L-cysteine solution used is 3 times the molar amount of cyanuric chloride in the ice-water mixture.
Preferably, in the preparation of the polishing solution, tetramethylammonium hydroxide is added into deionized water, isopropanol and triazine derivative are added, and the polishing solution is obtained after uniform mixing.
More preferably, the polishing solution is prepared such that the content of tetramethylammonium hydroxide in the polishing solution is 3 to 9 wt%.
More preferably, the polishing solution is formulated such that the isopropyl alcohol content of the polishing solution is 1.2 to 4.8 wt%.
More preferably, the polishing solution is formulated such that the triazine derivative is present in the polishing solution in an amount of 2 to 8 wt%.
More preferably, in the preparation of the polishing solution, 5-nitrofuran-2-formylhydrazine can be added in the preparation of the polishing solution, and the content of the 5-nitrofuran-2-formylhydrazine in the polishing solution is 2-8 wt%.
Preferably, in the polishing treatment of the silicon wafer, the polycrystalline silicon wafer with the surface silicon dioxide oxide layer removed is immersed into polishing liquid and treated for 60-300s at the temperature of 50-80 ℃ to obtain the polished polycrystalline silicon wafer.
The invention discloses a polycrystalline silicon wafer prepared by the method.
The polycrystalline silicon wafer disclosed by the invention can be used for preparing a battery piece. The cell piece is at least coated with an aluminum oxide passivation film, and further can be coated with a silicon nitride laminated passivation film.
Preferably, in the coating of the polished surface of the silicon wafer, an aluminum oxide passivation film is deposited on the polished surface of the polished polycrystalline silicon wafer by ALD, and then a silicon nitride laminated passivation film is deposited on the aluminum oxide passivation film by low-pressure tubular PECVD.
The invention discloses a polishing solution, which comprises: adding tetramethylammonium hydroxide into deionized water, adding isopropanol and triazine derivative, and uniformly mixing to obtain the final product.
Preferably, the polishing solution contains 5-nitrofuran-2-formylhydrazine. The invention discovers that after 5-nitrofuran-2-formhydrazide is added into an alkali polishing solution using tetramethylammonium hydroxide, isopropanol and triazine derivatives, the polishing effect of the alkali polishing solution on a polycrystalline silicon wafer can be improved, namely the flatness of the polycrystalline silicon wafer is improved, and the minority carrier lifetime and the conversion efficiency of the prepared battery plate coated with the aluminum oxide passivation film are improved.
The invention discloses an application of polishing solution containing tetramethylammonium hydroxide, isopropanol and triazine derivatives in polishing a polycrystalline silicon wafer, which comprises the following steps: the triazine derivative is obtained by substituting chlorine on cyanuric chloride by at least one L-cysteine.
Preferably, the triazine derivative is a mixture of substituents derived from cyanuric chloride in which at least one chlorine is substituted by L-cysteine.
Because the polishing solution containing tetramethyl ammonium hydroxide, isopropanol and triazine derivatives is adopted to polish the polycrystalline silicon wafer, and the polished silicon wafer is coated with aluminum oxide to prepare the cell, the invention has the following beneficial effects: the reflectivity of the polished surface of the polycrystalline silicon wafer polished by the alkali polishing solution is improved by 6-15%; the minority carrier lifetime of the battery piece coated with the aluminum oxide passivation film is prolonged by 30-60%; the conversion efficiency of the cell coated with the aluminum oxide passivation film is improved by 0.1-0.7%. Therefore, the alkali polishing method for the crystalline silicon surface battery of the polycrystalline silicon wafer is high in reflectivity and flatness.
Drawings
FIG. 1 is a graph of the reflectivity of an alkali polished surface of a polysilicon wafer;
FIG. 2 is a minority carrier lifetime map of a cell coated with an aluminum oxide passivation film;
fig. 3 is a graph of the conversion efficiency of a cell coated with an alumina passivation film.
Reference numerals: a is example 1, B is example 2, C is example 3, D is example 4, E is comparative example 1, F is comparative example 2, G is comparative example 3, and H is comparative example 4.
Detailed Description
The technical solution of the present invention is further described in detail below with reference to the following detailed description and the accompanying drawings:
the polycrystalline silicon wafer used in the implementation of the invention is a p-type polycrystalline silicon wafer.
Example 1:
an alkali polishing method for a battery on the surface of a crystal silicon,
cleaning a silicon wafer: and (2) placing the polycrystalline silicon wafer into an alkali cleaning solution, cleaning for 20min at the temperature of 80 ℃, rinsing with deionized water, then placing into an acid cleaning solution, ultrasonically cleaning for 20min at the temperature of 80 ℃, ultrasonically cleaning for 20min in the deionized water, and drying with nitrogen to obtain the cleaned polycrystalline silicon wafer. The alkali cleaning liquid is formed by mixing ammonia water, hydrogen peroxide and deionized water, wherein the usage amount of the ammonia water in the alkali cleaning liquid is 20wt% of the deionized water, and the usage amount of the hydrogen peroxide in the alkali cleaning liquid is 20wt% of the deionized water; the acid cleaning solution is formed by mixing hydrochloric acid, hydrogen peroxide and deionized water, wherein the usage amount of the hydrochloric acid in the acid cleaning solution is 20wt% of the deionized water, and the usage amount of the hydrogen peroxide in the acid cleaning solution is 20wt% of the deionized water.
And (3) removing a surface oxidation layer: and adding the cleaned polycrystalline silicon wafer into a hydrofluoric acid solution for ultrasonic cleaning for 10min, then ultrasonically cleaning in deionized water for 10min, and drying by nitrogen to obtain the polycrystalline silicon wafer with the surface silicon dioxide oxide layer removed. The hydrofluoric acid solution consists of hydrofluoric acid and deionized water, and the usage amount of the hydrofluoric acid in the hydrofluoric acid solution is 30wt% of the deionized water.
Preparation of triazine derivatives: adding cyanuric chloride into an alkaline ice water mixed solution, stirring to mix into slurry, dropwise adding an L-cysteine solution, adjusting the pH to be alkaline 12 at the temperature of 40 ℃ after the dropwise adding is finished, reacting for 5h, reacting for 3h at the temperature of 60 ℃, adjusting the pH to be acidic 2 after the reaction is finished, separating out a precipitate, washing with water and petroleum ether respectively, and drying to obtain the triazine derivative. The addition amount of the cyanuric chloride is 6wt% of the ice-water mixed solution, the L-cysteine solution is obtained by dissolving the L-cysteine in 2wt% of sodium hydroxide solution, the content of the L-cysteine in the L-cysteine solution is 3wt%, and the usage amount of the L-cysteine solution is based on 3 times of the molar amount of the cyanuric chloride in the ice-water mixed solution.
Preparing a polishing solution: adding tetramethylammonium hydroxide into deionized water, adding isopropanol and triazine derivative, and uniformly mixing to obtain the polishing solution. The content of tetramethylammonium hydroxide in the polishing solution was 5wt%, the content of isopropyl alcohol in the polishing solution was 3.6wt%, and the content of triazine derivative in the polishing solution was 3 wt%.
Polishing the silicon wafer: and (3) immersing the polycrystalline silicon wafer with the surface silicon dioxide oxide layer removed in polishing solution, and processing at 70 ℃ for 90s to obtain the polished polycrystalline silicon wafer.
Example 2:
this example is different from example 1 only in that the content of the triazine derivative in the polishing liquid is 6wt% in the preparation of the polishing liquid.
Example 3:
an alkali polishing method for a battery on the surface of a crystal silicon,
cleaning a silicon wafer: and (2) placing the polycrystalline silicon wafer into an alkali cleaning solution, cleaning for 20min at the temperature of 80 ℃, rinsing with deionized water, then placing into an acid cleaning solution, ultrasonically cleaning for 20min at the temperature of 80 ℃, ultrasonically cleaning for 20min in the deionized water, and drying with nitrogen to obtain the cleaned polycrystalline silicon wafer. The alkali cleaning liquid is formed by mixing ammonia water, hydrogen peroxide and deionized water, wherein the usage amount of the ammonia water in the alkali cleaning liquid is 20wt% of the deionized water, and the usage amount of the hydrogen peroxide in the alkali cleaning liquid is 20wt% of the deionized water; the acid cleaning solution is formed by mixing hydrochloric acid, hydrogen peroxide and deionized water, wherein the usage amount of the hydrochloric acid in the acid cleaning solution is 20wt% of the deionized water, and the usage amount of the hydrogen peroxide in the acid cleaning solution is 20wt% of the deionized water.
And (3) removing a surface oxidation layer: and adding the cleaned polycrystalline silicon wafer into a hydrofluoric acid solution for ultrasonic cleaning for 10min, then ultrasonically cleaning in deionized water for 10min, and drying by nitrogen to obtain the polycrystalline silicon wafer with the surface silicon dioxide oxide layer removed. The hydrofluoric acid solution consists of hydrofluoric acid and deionized water, and the usage amount of the hydrofluoric acid in the hydrofluoric acid solution is 30wt% of the deionized water.
Preparation of triazine derivatives: adding cyanuric chloride into an alkaline ice water mixed solution, stirring to mix into slurry, dropwise adding an L-cysteine solution, adjusting the pH to be alkaline 12 at the temperature of 40 ℃ after the dropwise adding is finished, reacting for 5h, reacting for 3h at the temperature of 60 ℃, adjusting the pH to be acidic 2 after the reaction is finished, separating out a precipitate, washing with water and petroleum ether respectively, and drying to obtain the triazine derivative. The addition amount of the cyanuric chloride is 6wt% of the ice-water mixed solution, the L-cysteine solution is obtained by dissolving the L-cysteine in 2wt% of sodium hydroxide solution, the content of the L-cysteine in the L-cysteine solution is 3wt%, and the usage amount of the L-cysteine solution is based on 3 times of the molar amount of the cyanuric chloride in the ice-water mixed solution.
Preparing a polishing solution: adding tetramethylammonium hydroxide into deionized water, adding isopropanol, triazine derivative and 5-nitrofuran-2-formhydrazide, and uniformly mixing to obtain the polishing solution. The content of tetramethylammonium hydroxide in the polishing solution was 5wt%, the content of isopropyl alcohol in the polishing solution was 3.6wt%, the content of triazine derivative in the polishing solution was 6wt%, and the content of 5-nitrofuran-2-formylhydrazine in the polishing solution was 3.2 wt%.
Polishing the silicon wafer: and (3) immersing the polycrystalline silicon wafer with the surface silicon dioxide oxide layer removed in polishing solution, and processing at 70 ℃ for 90s to obtain the polished polycrystalline silicon wafer.
Example 4:
this example is different from example 3 only in that the polishing solution was prepared such that the content of 5-nitrofuran-2-carbonyl hydrazine in the polishing solution was 6.8 wt%.
Comparative example 1:
this comparative example is different from example 2 only in that isopropanol was not used in the formulation of the polishing solution.
Comparative example 2:
this comparative example is different from example 2 only in that a triazine derivative is not used in the preparation of the polishing liquid.
Comparative example 3:
this comparative example is different from example 2 only in that isopropanol and triazine derivatives were not used in the formulation of the polishing liquid.
Comparative example 4:
this comparative example is different from example 4 only in that isopropanol and triazine derivatives were not used in the formulation of the polishing liquid.
Test example:
1. reflectance test
Test samples: the resulting polycrystalline silicon wafers were treated by the methods of the examples and comparative examples.
And testing the reflectivity of the polished surface of the sample by using a reflectivity tester, and representing the reflectivity of the polycrystalline silicon wafer by using light with the wavelength of 600 nm.
The reflectivity test is carried out between 400-1000nm, the reflectivity of the polycrystalline silicon wafer treated by the same method is changed between 400-1000nm, when the reflectivities of the polycrystalline silicon wafers treated by different methods are compared, the polycrystalline silicon wafer with higher reflectivity at any wavelength has higher reflectivity between 400-1000nm, and therefore the comparison is carried out according to the reflectivity of 600nm, the reflectivity test results of the polycrystalline silicon wafers treated by the methods of the embodiments and the comparative examples of the invention are shown in figure 1, the reflectivity of the polished surface of the polycrystalline silicon wafer treated by the method of the embodiment 1 is 46.19%, the reflectivity of the polished surface of the polycrystalline silicon wafer treated by the method of the embodiment 2 is 47.44%, the reflectivity of the polished surface of the polycrystalline silicon wafer treated by the method of the comparative example 1 is 39.84%, and the reflectivity of the polished surface of the polycrystalline silicon wafer treated by the method of the comparative example 2 is 39.89%, the reflectance of the polished surface of the polysilicon wafer obtained by the method of comparative example 3 was 39.82%, and the comparison between example 2 and comparative example 3 shows that the reflectance of the polysilicon wafer obtained by the alkali polishing treatment in the alkali polishing treatment of the polysilicon surface was improved by 8.62% in comparison with comparative example 3, using a tetramethylammonium hydroxide solution containing isopropanol and triazine derivatives as the polishing solution, and the comparison between comparative examples 1-2 and comparative example 3 shows that the reflectance of the polysilicon wafer obtained by the alkali polishing treatment was improved by 8.62% in comparison with that of the polysilicon wafer obtained by the alkali polishing treatment of example 2, and that the reflectance of the polysilicon surface after polishing with the polishing solution was substantially the same as that after the isopropanol and triazine derivatives were removed from the polishing solution, i.e., if the polishing solution did not contain isopropanol and/or triazine derivatives, the reflectance of the polysilicon after polishing was not changed, namely, the flatness of the polished polysilicon is consistent; the reflectance of the polished surface of the polysilicon wafer obtained by the treatment of example 3 was 50.62%, the reflectance of the polished surface of the polysilicon wafer obtained by the treatment of example 4 was 51.86%, and it was shown that, compared to example 2, example 4, when 5-nitrofuran-2-formylhydrazine was added to a polishing solution containing isopropyl alcohol and a triazine derivative, the reflectance of the polished surface of the polysilicon wafer obtained by the treatment of example 4 was improved, which indicates that the flatness of the polysilicon wafer obtained by the treatment of example 4 was improved, and the reflectance of the polished surface of the polysilicon wafer obtained by the treatment of example 4 was improved by 4.42% as compared to example 2; the reflectance of the polished surface of the polycrystalline silicon wafer obtained by the method of comparative example 4 is 39.85%, and the comparison between comparative example 3 and comparative example 4 shows that the treatment results of the method of comparative example 4 and the method of comparative example 3 are basically the same, and that 5-nitrofuran-2-formylhydrazine is required to improve the flatness of the surface of the polycrystalline silicon wafer after the alkali polishing treatment in the presence of isopropanol and triazine derivatives.
The reflectivity of the polished surface of the polycrystalline silicon wafer polished by the alkali polishing solution is improved by 6-15%.
2. Minority carrier lifetime test
Test samples: the front surface of the polysilicon is subjected to conventional acid texturing, the back surface of the polysilicon is subjected to alkali polishing by adopting the methods of various examples and comparative examples, and then Al with the same thickness is deposited on the back surface of the polished polysilicon chip by adopting ALD (atomic layer deposition)2O3And controlling the thickness of the film by controlling the cycle number, and performing rapid thermal annealing on the sample in a sintering annealing furnace after screen printing to obtain the cell piece coated with the alumina film.
And testing the minority carrier lifetime of the battery plate coated with the alumina film by adopting a minority carrier lifetime tester through a QSSPC quasi-steady-state photoconduction method.
The test results of the cell obtained by coating the obtained polysilicon wafer with alumina according to the methods of the examples and comparative examples of the present invention, and the alumina thin film-coated cell are shown in FIG. 2, wherein the minority carrier lifetime of the alumina thin film-coated cell prepared by the method of example 1 is 286.27 μ s, the minority carrier lifetime of the alumina thin film-coated cell prepared by the method of example 2 is 302.48 μ s, the minority carrier lifetime of the alumina thin film-coated cell prepared by the method of comparative example 1 is 221.67 μ s, the minority carrier lifetime of the alumina thin film-coated cell prepared by the method of comparative example 2 is 228.49 μ s, the minority carrier lifetime of the alumina thin film-coated cell prepared by the method of comparative example 3 is 217.21 μ s, and the result of the comparison between example 2 and comparative example 3 indicates that the alkaline polishing treatment of the polysilicon surface is carried out using the solution containing isopropanol, The tetramethylammonium hydroxide solution of triazine derivative is used as polishing solution, the minority carrier lifetime of the cell with the alumina film coated on the polycrystalline silicon wafer obtained by alkali polishing is improved, compared with the comparative example 3, the minority carrier lifetime of the cell with the alumina film coated on the polycrystalline silicon wafer obtained by alkali polishing in the embodiment 2 is improved by 39.25%, and compared with the comparative example 3, the cell with the alumina film coated on the polycrystalline silicon wafer treated by the polishing solution after removing isopropanol or triazine derivative in the polishing solution is slightly improved in the minority carrier lifetime of the cell with the alumina film coated on the polycrystalline silicon wafer obtained by polishing the polycrystalline silicon wafer by the polishing solution without isopropanol or triazine derivative in the comparative examples 1-2; the minority carrier lifetime of the cell sheet coated with the alumina thin film prepared after the treatment by the method of example 3 is 341.28 μ s, the minority carrier lifetime of the cell sheet coated with the alumina thin film prepared after the treatment by the method of example 4 is 353.42 μ s, and the minority carrier lifetime of the cell sheet coated with the alumina thin film is improved after the polycrystalline silicon wafer coated with the alumina thin film obtained by the method of example 4 is treated after 5-nitrofuran-2-formhydrazide is added into a polishing solution containing isopropanol and triazine derivatives compared with that of example 2 in example 4, and is improved by 16.84% compared with that of the cell sheet coated with the polycrystalline silicon wafer coated with the alumina thin film obtained by the method of example 4 in example 2; the minority carrier lifetime of the cell sheet of the polycrystalline silicon wafer-coated alumina thin film obtained by the treatment of the method of comparative example 4 was 217.37 μ s, and the treatment results of the method of comparative example 4 and the method of comparative example 3 were substantially the same as those of comparative example 3 as compared with comparative example 4 and example 4, indicating that 5-nitrofuran-2-carbonyl hydrazine was required in the presence of isopropanol and triazine derivative to improve the minority carrier lifetime of the cell sheet of the coated alumina thin film.
The minority carrier lifetime of the battery piece coated with the aluminum oxide passive film prepared by the invention is prolonged by 30-60%.
3. Electrical Performance testing
Test samples: the front surface of the polysilicon is subjected to conventional acid texturing, the back surface of the polysilicon is subjected to alkali polishing by adopting the methods of various examples and comparative examples, and then Al with the same thickness is deposited on the back surface of the polished polysilicon chip by adopting ALD (atomic layer deposition)2O3And controlling the thickness of the film by controlling the cycle number, and performing rapid thermal annealing on the sample in a sintering annealing furnace after screen printing to obtain the cell piece coated with the alumina film.
The electrical property of the battery piece coated with the alumina film is tested by adopting a Halm battery electrical property tester, and the electrical property is tested at 100mW/cm2The international standard light intensity simulation light source irradiates the surface of the sample to be tested for testing, and the conversion efficiency is calculated.
The test results of the cell sheets obtained by coating the obtained polysilicon wafers with alumina according to the methods of the present invention and comparative examples are shown in FIG. 3, the conversion efficiency of the cell sheets coated with alumina film prepared after the treatment by the method of example 1 is 19.43%, the conversion efficiency of the cell sheets coated with alumina film prepared after the treatment by the method of example 2 is 19.49%, the conversion efficiency of the cell sheets coated with alumina film prepared after the treatment by the method of comparative example 1 is 19.21%, the conversion efficiency of the cell sheets coated with alumina film prepared after the treatment by the method of comparative example 2 is 19.25%, the conversion efficiency of the cell sheets coated with alumina film prepared after the treatment by the method of comparative example 3 is 19.12%, and the results of the test results of example 2 in comparison with comparative example 3 show that in the alkali polishing treatment of the polysilicon surface, a polishing treatment using a polishing solution containing isopropyl alcohol, methyl ethyl alcohol, methyl alcohol, ethyl alcohol, the tetramethylammonium hydroxide solution of triazine derivative is used as polishing solution, the conversion efficiency of the cell with the alumina film coated on the polycrystalline silicon wafer obtained by alkali polishing treatment is improved, compared with comparative example 3, the conversion efficiency of the cell with the alumina film coated on the polycrystalline silicon wafer obtained by alkali polishing treatment in the embodiment 2 is improved by 0.37%, and the conversion efficiency of the cell with the alumina film coated on the polycrystalline silicon wafer obtained by alkali polishing treatment in the comparative example 1-2 is slightly improved compared with that of the cell with the alumina film coated on the polycrystalline silicon wafer obtained by polishing the polycrystalline silicon wafer with the polishing solution without using isopropanol and triazine derivative in the comparative examples 1-2 compared with that of the cell with the alumina film coated on the polycrystalline silicon wafer obtained by polishing the polishing solution without using isopropanol and triazine derivative in the comparative examples 3; the conversion efficiency of the alumina-coated cell sheet prepared after the treatment by the method of example 3 was 19.67%, the conversion efficiency of the alumina-coated cell sheet prepared after the treatment by the method of example 4 was 19.72%, and the conversion efficiency of the alumina-coated cell sheet obtained after the treatment by the method of example 4 was improved when the polycrystalline silicon wafer-coated alumina film obtained by the treatment by the method of example 4 was treated with an alumina film after 5-nitrofuran-2-formylhydrazine was added to a polishing solution containing isopropyl alcohol and a triazine derivative, as compared with example 2, and the conversion efficiency of the polycrystalline silicon wafer-coated alumina film obtained by the treatment by the method of example 4 was improved by 0.23% as compared with example 2; the conversion efficiency of the cell sheet of the polycrystalline silicon wafer-coated alumina thin film obtained by the process of comparative example 4 was 19.17%, and the comparison of comparative example 3 with comparative example 4 and example 4 showed that the process of comparative example 4 was substantially the same as that of comparative example 3, indicating that 5-nitrofuran-2-carbonyl hydrazine was required in the presence of isopropanol and triazine derivative to improve the conversion efficiency of the cell sheet of the coated alumina thin film.
The conversion efficiency of the battery piece coated with the aluminum oxide passive film prepared by the invention is improved by 0.1-0.7%.
The above embodiments are merely illustrative, and not restrictive, and those skilled in the art can make various changes and modifications without departing from the spirit and scope of the invention. Therefore, all equivalent technical solutions also belong to the scope of the present invention, and the protection scope of the present invention should be defined by the claims.
Claims (9)
1. An alkali polishing method for a crystal silicon surface battery comprises the following steps:
cleaning a polycrystalline silicon wafer to obtain a processed polycrystalline silicon wafer, wherein a silicon dioxide oxide layer is not formed on the polycrystalline silicon wafer;
treating the treated polycrystalline silicon wafer in polishing solution to obtain a polished polycrystalline silicon wafer; the polishing solution contains tetramethylammonium hydroxide, isopropanol and a triazine derivative, wherein the triazine derivative is a mixture of substitutes obtained by substituting at least one chlorine on cyanuric chloride by L-cysteine.
2. The alkaline polishing method for the crystalline silicon surface battery as claimed in claim 1, which is characterized in that: and in the cleaning treatment, a hydrofluoric acid solution is used for removing the silicon dioxide oxide layer.
3. The alkaline polishing method for the crystalline silicon surface battery as claimed in claim 1, which is characterized in that: in the cleaning treatment, an alkali cleaning solution and an acid cleaning solution are used for cleaning the polycrystalline silicon wafer; the alkali cleaning solution is formed by mixing ammonia water, hydrogen peroxide and deionized water, and the acid cleaning solution is formed by mixing hydrochloric acid, hydrogen peroxide and deionized water.
4. The alkaline polishing method for the crystalline silicon surface battery as claimed in claim 1, which is characterized in that: the polishing solution contains 5-nitrofuran-2-formylhydrazine.
5. A polycrystalline silicon wafer produced by the method of any one of claims 1 to 4.
6. A polishing liquid comprising: adding tetramethylammonium hydroxide into deionized water, adding isopropanol and a triazine derivative, and uniformly mixing to obtain the triazine derivative, wherein the triazine derivative is a mixture of substitutes obtained by substituting at least one chlorine on cyanuric chloride by L-cysteine.
7. The polishing solution according to claim 6, wherein: the polishing solution contains 5-nitrofuran-2-formylhydrazine.
8. The polishing solution according to claim 6, wherein: the content of the tetramethylammonium hydroxide in the polishing solution is 3-9 wt%.
9. Use of a polishing liquid comprising tetramethylammonium hydroxide, isopropanol and a triazine derivative for polishing a polycrystalline silicon wafer, comprising: the triazine derivative is a mixture of substitutes obtained by substituting at least one chlorine on cyanuric chloride by L-cysteine.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111494449.4A CN113903832B (en) | 2021-12-09 | 2021-12-09 | Alkali polishing method for crystal silicon surface battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111494449.4A CN113903832B (en) | 2021-12-09 | 2021-12-09 | Alkali polishing method for crystal silicon surface battery |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113903832A CN113903832A (en) | 2022-01-07 |
| CN113903832B true CN113903832B (en) | 2022-02-25 |
Family
ID=79025836
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111494449.4A Active CN113903832B (en) | 2021-12-09 | 2021-12-09 | Alkali polishing method for crystal silicon surface battery |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113903832B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115662877B (en) * | 2022-09-08 | 2023-08-04 | 东海县太阳光新能源有限公司 | Monocrystalline silicon surface cleaning method |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019030865A1 (en) * | 2017-08-09 | 2019-02-14 | 日立化成株式会社 | Polishing solution and polishing method |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3400558B2 (en) * | 1994-08-12 | 2003-04-28 | メック株式会社 | Copper and copper alloy etchant |
| CN102969392B (en) * | 2012-10-17 | 2015-09-16 | 横店集团东磁股份有限公司 | A kind of single-sided polishing technique of solar energy single crystal silion cell |
| JP6849595B2 (en) * | 2014-12-22 | 2021-03-24 | ビーエイエスエフ・ソシエタス・エウロパエアＢａｓｆ Ｓｅ | Use of Chemical Mechanical Polishing (CMP) Composition for Polishing Substrates Containing Cobalt and / or Cobalt Alloys |
| TWI794474B (en) * | 2019-04-15 | 2023-03-01 | 日商昭和電工材料股份有限公司 | Grinding fluid, grinding fluid set and grinding method |
-
2021
- 2021-12-09 CN CN202111494449.4A patent/CN113903832B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019030865A1 (en) * | 2017-08-09 | 2019-02-14 | 日立化成株式会社 | Polishing solution and polishing method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113903832A (en) | 2022-01-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110518088B (en) | Preparation method of SE solar cell | |
| CN109994553A (en) | Three layers of dielectric passivation film PERC solar cell of one kind and manufacture craft | |
| CN112309849B (en) | Method for etching and polishing single surface of silicon wafer | |
| TW201703277A (en) | Preparation method of localized back contact solar cell | |
| CN102185011A (en) | Texturing method for solar cell | |
| CN112542531B (en) | Silicon wafer pretreatment and heterojunction battery preparation method | |
| CN109346536A (en) | A kind of contact passivation crystal silicon solar energy battery structure and preparation method | |
| CN111509090B (en) | Battery edge passivation method | |
| CN102181935A (en) | Method and corrosive liquid for making texture surface of monocrystalline silicon | |
| CN113903832B (en) | Alkali polishing method for crystal silicon surface battery | |
| CN111584343A (en) | Preparation method of monocrystalline silicon wafer capable of simultaneously realizing polishing and texturing | |
| CN114256382A (en) | Texturing and cleaning method for silicon wafer and preparation method for crystalline silicon solar cell | |
| Jiang et al. | Optimization of a silicon wafer texturing process by modifying the texturing temperature for heterojunction solar cell applications | |
| Zhang et al. | A novel additive for rapid and uniform texturing on high-efficiency monocrystalline silicon solar cells | |
| CN113471311B (en) | Heterojunction battery and preparation method thereof | |
| Basu et al. | Impact of surface roughness on the electrical parameters of industrial high efficiency NaOH–NaOCl textured multicrystalline silicon solar cell | |
| CN112768534A (en) | Silicon oxide passivated PERC double-sided battery and preparation method thereof | |
| CN218160392U (en) | Solar cell | |
| CN107482081B (en) | Solar cell, preparation method thereof and solar cell | |
| CN113964215B (en) | Texturing method of TOPcon battery | |
| Han et al. | Wet-texturing process for a thin crystalline silicon solar cell at low cost with high efficiency | |
| CN109300999A (en) | A kind of efficient crystal silicon solar batteries preparation method and its battery of preparation | |
| Ji et al. | Improvement of the surface structure for the surface passivation of black silicon | |
| CN115020539A (en) | PERC battery back structure, preparation process and PERC battery | |
| Seiffe et al. | Multifunctional PECVD layers: dopant source, passivation, and optics |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Address after: 312000 workshop 13-1, building 8, 22 Sanjiang East Road, Doumen street, Yuecheng District, Shaoxing City, Zhejiang Province Applicant after: Shaoxing Tuobang new energy Co.,Ltd. Address before: 312000 workshop 13-1, building 8, 22 Sanjiang East Road, Doumen street, Yuecheng District, Shaoxing City, Zhejiang Province Applicant before: SHAOXING TUOBANG ELECTRONIC TECHNOLOGY Co.,Ltd. |