CN113894432A - Laser scribing method and solar cell - Google Patents
Laser scribing method and solar cell Download PDFInfo
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- CN113894432A CN113894432A CN202111472636.2A CN202111472636A CN113894432A CN 113894432 A CN113894432 A CN 113894432A CN 202111472636 A CN202111472636 A CN 202111472636A CN 113894432 A CN113894432 A CN 113894432A
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- 238000006243 chemical reaction Methods 0.000 claims abstract description 88
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 239000000463 material Substances 0.000 claims description 6
- 229910004613 CdTe Inorganic materials 0.000 claims 1
- 238000010521 absorption reaction Methods 0.000 description 4
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 2
- 230000001154 acute effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- -1 ITO Chemical compound 0.000 description 1
- MURCDOXDAHPNRQ-ZJKZPDEISA-N L-685,458 Chemical compound C([C@@H]([C@H](O)C[C@H](C(=O)N[C@@H](CC(C)C)C(=O)N[C@@H](CC=1C=CC=CC=1)C(N)=O)CC=1C=CC=CC=1)NC(=O)OC(C)(C)C)C1=CC=CC=C1 MURCDOXDAHPNRQ-ZJKZPDEISA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
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- 239000011787 zinc oxide Substances 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
- H01L31/0463—PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
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- H—ELECTRICITY
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
- H01L31/0465—PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising particular structures for the electrical interconnection of adjacent PV cells in the module
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- H—ELECTRICITY
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Abstract
The application provides a laser scribing method and a solar cell, wherein a first electrode layer and a photoelectric conversion layer located on the first electrode layer are arranged on a substrate, the first electrode layer is provided with a first laser scribing groove, then laser scribing is carried out on the photoelectric conversion layer to obtain a second laser scribing groove, and the second laser scribing groove is used for forming electrode contact between sub-electrodes later, so that series connection among the sub-electrodes is achieved. The first side wall of the second laser scribing groove close to the first laser scribing groove and the bottom of the second laser scribing groove form an obtuse angle, and therefore when a second electrode layer is formed on the photoelectric conversion layer, the first side wall of the second laser scribing groove and the bottom of the second laser scribing groove form the obtuse angle, the second electrode layer can uniformly cover the bottoms of the first side wall and the second laser scribing groove, the situation that the second electrode layer is discontinuous at the bottoms of the first side wall and the second laser scribing groove cannot occur, and the problem of open circuit among the sub-batteries cannot occur.
Description
Technical Field
The invention relates to the field of semiconductors, in particular to a laser scribing method and a solar cell.
Background
Currently, a semiconductor device of a stacked structure is rapidly developed, and for example, a solar cell of a stacked structure may be applied in real life.
In order to improve the application performance of the solar cell in actual life, laser scribing can be performed on a large-area solar electrode, so that the large-area solar cell can be divided into a plurality of sub-cells connected in series.
However, the existing laser scribing can cause that the formed laser scribing groove can not meet the requirement, and further, the open circuit occurs among the plurality of sub-batteries.
Disclosure of Invention
In view of the above, an object of the present invention is to provide a laser scribing method and a solar cell, which can solve the problem that a plurality of sub-cells are disconnected due to the fact that laser scribing grooves formed by laser scribing cannot meet requirements.
The embodiment of the application provides a laser scribing method, which comprises the following steps:
providing a substrate, wherein the substrate is provided with a first electrode layer and a photoelectric conversion layer positioned on the first electrode layer, and the first electrode layer is provided with a first laser scribing groove;
carrying out laser scribing on the photoelectric conversion layer to obtain a second laser scribing groove; the first side wall of the second laser scribing groove close to the first laser scribing groove and the bottom of the second laser scribing groove form an obtuse angle.
Optionally, laser scribing the photoelectric conversion layer to obtain a second laser scribing groove includes:
when the photoelectric conversion layer is subjected to laser scribing in a region close to the first laser scribing groove, the photoelectric conversion layer and laser form an obtuse angle, and the second laser scribing groove is obtained.
Optionally, the central wavelength of the laser is determined according to the material of the photoelectric conversion layer.
Optionally, the method further comprises:
and forming a second electrode layer on the photoelectric conversion layer, wherein the second electrode layer at least covers the first side wall and the bottom of the second laser scribing groove.
Optionally, the method further comprises:
and carrying out laser scribing on the second electrode layer in the area close to the second laser scribing groove to obtain a third laser scribing groove, wherein the depth of the third laser scribing groove is the sum of the thickness of the photoelectric conversion layer and the thickness of the second electrode layer.
Optionally, the depth of the first laser scribing groove is equal to the thickness of the first electrode layer, and the depth of the second laser scribing groove is equal to the thickness of the photoelectric conversion layer.
Optionally, the photoelectric conversion layer is an organic photoelectric conversion layer, a copper indium gallium selenide photoelectric conversion layer, a cadmium telluride photoelectric conversion layer, or a perovskite photoelectric conversion layer.
Optionally, the first sidewall makes an obtuse angle with the bottom of the second laser scribe less than 150 °.
An embodiment of the present application further provides a solar cell, including:
the photoelectric conversion device comprises a substrate, a first electrode layer and a photoelectric conversion layer, wherein the first electrode layer is arranged on the substrate and is provided with a first laser scribing groove;
the photoelectric conversion layer is provided with a second laser scribing groove; the first side wall of the second laser scribing groove close to the first laser scribing groove and the bottom of the second laser scribing groove form an obtuse angle.
Optionally, the method further comprises:
a second electrode layer is formed on the photoelectric conversion layer and at least covers the first side wall and the bottom of the second laser scribing groove;
the second electrode layer is provided with a third laser scribing groove, and the third laser scribing groove is close to the second laser scribing groove and far away from the first laser scribing groove.
The embodiment of the application provides a laser scribing method, which comprises the steps of providing a substrate, wherein a first electrode layer and a photoelectric conversion layer positioned on the first electrode layer are arranged on the substrate, the first electrode layer is provided with a first laser scribing groove, the first laser scribing groove is used for cutting a large-area solar cell into a plurality of sub-cells, then laser scribing is carried out on the photoelectric conversion layer to obtain a second laser scribing groove, and the second laser scribing groove is used for forming electrode contact among the sub-electrodes later, so that series connection among the sub-electrodes is realized. The first side wall of the second laser scribing groove close to the first laser scribing groove and the bottom of the second laser scribing groove form an obtuse angle, and therefore when a second electrode layer is formed on the photoelectric conversion layer, the first side wall of the second laser scribing groove and the bottom of the second laser scribing groove form the obtuse angle, the second electrode layer can uniformly cover the bottoms of the first side wall and the second laser scribing groove, the situation that the second electrode layer is discontinuous at the bottoms of the first side wall and the second laser scribing groove cannot occur, and the problem of open circuit among the sub-batteries cannot occur.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
FIG. 1 shows a schematic cross-sectional view of a laser scribed solar cell of the prior art;
FIG. 2 shows a schematic cross-sectional view of another laser scribed solar cell of the prior art;
FIG. 3 shows a schematic cross-sectional view of yet another prior art laser scribed solar cell;
FIG. 4 is a schematic flow chart illustrating a laser scribing method according to an embodiment of the present application;
fig. 5-8 show schematic cross-sectional views of a laser scribed solar cell according to an embodiment of the present application.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present application more comprehensible, embodiments accompanying the present application are described in detail below with reference to the accompanying drawings.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application, but the present application may be practiced in other ways than those described herein, and it will be apparent to those of ordinary skill in the art that the present application is not limited by the specific embodiments disclosed below.
Next, the present application will be described in detail with reference to the drawings, and in the detailed description of the embodiments of the present application, the cross-sectional views illustrating the structure of the device are not enlarged partially according to the general scale for convenience of illustration, and the drawings are only examples, which should not limit the scope of the protection of the present application. In addition, the three-dimensional dimensions of length, width and depth should be included in the actual fabrication.
As described in the background art, in order to improve the application performance of the solar cell in real life, laser scribing may be performed on a large-area solar electrode, so as to divide the large-area solar cell into a plurality of sub-cells connected in series.
The specific process is as follows:
referring to fig. 1, a schematic cross-sectional view of a solar cell scribed by a laser in the prior art is shown. The solar cell 100 in the prior art includes a substrate 110, a first electrode layer 120, a photoelectric conversion layer 130, and a second electrode layer 140, wherein the substrate 110, the first electrode layer 120, the photoelectric conversion layer 130, and the second electrode layer 140 are stacked.
The first electrode layer 120 has a first laser scribing groove 121 therein, and the first laser scribing groove 121 is used for dividing the first electrode layer 120 into a plurality of regions to cut a large-area solar cell into a plurality of sub-cells. In fig. 1, the first laser scribed groove 121 is shown dividing the solar cell into 2 regions, a first region 101 on which the first subcell is formed and a second region 102 on which the second subcell is formed.
The second laser scribing groove 131 is formed near the first laser scribing groove 121, and the second electrode layer 140 covers the side wall and the bottom of the second laser scribing groove 131, so that the second electrode layer 140 of the first region is connected with the first electrode layer 120 of the second region, and the series connection of the first sub-cell of the first region and the second sub-cell of the second region is realized.
The third laser scribing groove 141 is formed near the second laser scribing groove 131, and is used for dividing the second electrode layer into a plurality of regions, so as to avoid short circuit between the first sub-battery and the second sub-battery caused by connection between the second electrode layer of the first region 101 and the second electrode layer of the second region 102.
However, when the second electrode layer is formed on the second laser scribing groove obtained by the conventional laser scribing, the second electrode layer is often discontinuous, so that the second electrode layer 140 in the first region and the first electrode layer 120 in the second region cannot be connected, the first sub-battery in the first region and the second sub-battery in the second region cannot be connected in series, and the two sub-batteries are disconnected.
The inventor researches and discovers that the conventional second laser scribing groove obtained by laser scribing has a first side wall, the first side wall is a side wall of the second laser scribing groove close to the first laser scribing groove, and the first side wall and the bottom of the laser scribing groove form a right angle (shown in reference to fig. 2) or an acute angle (shown in reference to fig. 3), so that when a second electrode layer is formed in the second laser scribing groove, when the thickness of the second electrode layer is smaller than the depth of the second laser scribing groove, the second electrode layer cannot completely cover the first side wall and the bottom of the second laser scribing groove, the second electrode layer in the second laser scribing groove is discontinuous, and the sub-electrodes in different areas are disconnected.
Based on this, an embodiment of the present application provides a laser scribing method, which includes providing a substrate, and providing a first electrode layer and a photoelectric conversion layer located on the first electrode layer on the substrate, where the first electrode layer has a first laser scribing groove, the first laser scribing groove is used to cut a large-area solar cell into a plurality of sub-cells, and then laser scribing is performed on the photoelectric conversion layer to obtain a second laser scribing groove, and the second laser scribing groove is used to form electrode contacts between the sub-electrodes later, so as to implement series connection between the sub-electrodes. The first side wall of the second laser scribing groove close to the first laser scribing groove and the bottom of the second laser scribing groove form an obtuse angle, and therefore when a second electrode layer is formed on the photoelectric conversion layer, the first side wall of the second laser scribing groove and the bottom of the second laser scribing groove form the obtuse angle, the second electrode layer can uniformly cover the bottoms of the first side wall and the second laser scribing groove, the situation that the second electrode layer is discontinuous at the bottoms of the first side wall and the second laser scribing groove cannot occur, and the problem of open circuit among the sub-batteries cannot occur.
For a better understanding of the technical solutions and effects of the present application, specific embodiments will be described in detail below with reference to the accompanying drawings.
Referring to fig. 4, a schematic flow chart of a laser scribing method according to an embodiment of the present application is shown. The method comprises the following steps:
s401, providing a substrate 410, wherein the substrate has a first electrode layer 420 and a photoelectric conversion layer 430 on the first electrode layer, and the first electrode layer 420 has a first laser scribing groove 421, as shown in fig. 5.
In embodiments of the present application, the substrate may be glass or a similar transparent rigid substrate. The material of the first electrode layer may be a transparent metal oxide, such as indium tin oxide, ITO, fluorine doped tin oxide, FTO, or aluminum doped zinc oxide, AZO.
The first electrode layer has a first laser scribing groove 421, and the depth of the first laser scribing groove 421 is at least the thickness of the first electrode layer 420, so as to divide the first electrode layer 420 into a plurality of regions and cut the large-area solar cell into a plurality of sub-cells. In fig. 5, the first laser scribed groove 421 is shown dividing the solar cell into 2 regions, a first region 401 on which the first subcell is formed and a second region 402 on which the second subcell is formed.
A photoelectric conversion layer is formed on the first electrode layer, and the photoelectric conversion layer may be formed by a spin coating method or other processes, which is not particularly limited in this embodiment. The photoelectric conversion layer may be an organic photoelectric conversion layer, a copper indium gallium selenide photoelectric conversion layer, a cadmium telluride photoelectric conversion layer, or a perovskite photoelectric conversion layer. The thickness of the photoelectric conversion layer is greater than the depth of the first laser scribing groove, and therefore, the photoelectric conversion layer can completely fill the first laser scribing groove.
S402, performing laser scribing on the photoelectric conversion layer 430 to obtain a second laser scribing groove 431, as shown in fig. 6.
In the embodiment of the present application, the photoelectric conversion layer is laser-scribed at a region close to the first laser-scribed groove 421, resulting in the second laser-scribed groove 431. The depth of the second laser scribing groove is at least the thickness of the photoelectric conversion layer, so that the purpose of contacting the second electrode layer of the subsequent first area with the first electrode layer of the second area can be realized, but the depth of the second laser scribing groove cannot be larger than the sum of the thicknesses of the first electrode layer and the photoelectric conversion layer, and thus the second electrode layer of the first area cannot be contacted with the first electrode layer of the second area.
Referring to fig. 6, the second laser scribing groove has a first sidewall 431-1 and a second sidewall 431-2, and the first sidewall 431-1 is a sidewall adjacent to the first laser scribing groove 421. The first side wall and the bottom of the second laser scribing groove form an obtuse angle, namely the first side wall and the upper surface of the photoelectric conversion layer form a slope.
In practical applications, the obtuse angle formed by the first sidewall and the bottom of the second laser scribing groove is less than 150 °, because if the angle is too large, the efficiency of the laser scribing may be affected, which leads to an increase in the cost of the laser scribing.
As a possible way of forming the second laser scribed groove, when the photoelectric conversion layer is laser scribed in a region close to the first laser scribed groove, the photoelectric conversion layer forms an obtuse angle with the laser, resulting in the second laser scribed groove. That is, when the photoelectric conversion layer is laser scribed, the photoelectric conversion layer and the laser are not perpendicular, but form an obtuse angle, so that the second laser scribing groove in which the first side wall and the bottom of the second laser scribing groove form an obtuse angle is finally scribed.
In laser scribing the photoelectric conversion layer, the central wavelength of the laser light is determined according to the material of the photoelectric conversion layer, and in general, the central wavelength of the laser light may be determined as an absorption peak of the material of the photoelectric conversion layer. For example, the absorption peak of the perovskite photoelectric conversion layer may be 500 nm, and the central wavelength of the laser may be 500 nm, in which case the laser is green. In another example, if the absorption peak of the perovskite photoelectric conversion layer may be 500 nm, the central wavelength of the laser may be 550 nm, that is, laser scribing of the photoelectric conversion layer may be performed in the vicinity of the absorption peak of the perovskite photoelectric conversion layer.
In practical application, when the photoelectric conversion layer is subjected to laser scribing, since the first electrode layer is made of a transparent material, laser for performing laser scribing on the photoelectric conversion layer directly penetrates through the first electrode layer, and the first electrode layer is not damaged.
In practical applications, the second sidewall 431-2 of the second laser scribing groove may form an obtuse angle, a right angle, or an acute angle with the bottom of the second laser scribing groove, because the first sidewall 431-1 is a sidewall far from the first laser scribing groove 421, and does not need to form a slope with the upper surface of the photoelectric conversion layer, i.e., it is not necessary to ensure that the second electrode layer is continuous on the bottom of the second laser scribing groove and the second sidewall, and as long as the second electrode layer is continuous on the bottom of the second laser scribing groove and the first sidewall, the second electrode layer in the first region can be in contact with the first electrode layer in the second region, so as to implement series connection of the sub-cells.
In the embodiment of the present application, after the second laser scribing groove 431 is formed on the photoelectric conversion layer 430, a second electrode layer 440 may be further formed on the photoelectric conversion layer 430, and the second electrode layer 440 covers at least the first sidewall 431-1 and the bottom of the second laser scribing groove 431, as shown with reference to fig. 7. Since the first side wall 431-1 and the bottom of the second laser-scribed groove 431 form an obtuse angle, that is, a slope is formed on the upper surface and the first side wall of the photoelectric conversion layer 430, the second electrode layer easily forms a continuous film layer on the slope, and can be in good contact with the first electrode layer. The material of the second electrode layer may be a metal material.
In the embodiment of the present application, after the second electrode layer 440 is formed on the photoelectric conversion layer 430, the second electrode layer 440 may be also laser-scribed at a region close to the second laser-scribed groove 431, resulting in a third laser-scribed groove 441. Referring to fig. 8, the third laser scribing groove 441 is close to the second laser scribing groove 431 and is far from the first laser scribing groove 421, that is, the first laser scribing groove 421, the second laser scribing groove 431, and the third laser scribing groove 441 are sequentially arranged in the same direction. The third laser scribing groove 441 is used for dividing the second electrode layer 440 into a plurality of regions, so as to avoid short circuit of the first sub-cell and the second sub-cell caused by connection of the second electrode layer of the first region 401 and the second electrode layer of the second region 402.
In practical applications, the depth of the third laser scribing groove 441 is the sum of the thickness of the photoelectric conversion layer 430 and the thickness of the second electrode layer 440, so that the short circuit between the first sub-cell of the first region and the second sub-cell of the second region can be avoided.
The embodiment of the application provides a laser scribing method, which comprises the steps of providing a substrate, wherein a first electrode layer and a photoelectric conversion layer positioned on the first electrode layer are arranged on the substrate, the first electrode layer is provided with a first laser scribing groove, the first laser scribing groove is used for cutting a large-area solar cell into a plurality of sub-cells, then laser scribing is carried out on the photoelectric conversion layer to obtain a second laser scribing groove, and the second laser scribing groove is used for forming electrode contact among the sub-electrodes later, so that series connection among the sub-electrodes is realized. The first side wall of the second laser scribing groove close to the first laser scribing groove and the bottom of the second laser scribing groove form an obtuse angle, and therefore when a second electrode layer is formed on the photoelectric conversion layer, the first side wall of the second laser scribing groove and the bottom of the second laser scribing groove form the obtuse angle, the second electrode layer can uniformly cover the bottoms of the first side wall and the second laser scribing groove, the situation that the second electrode layer is discontinuous at the bottoms of the first side wall and the second laser scribing groove cannot occur, and the problem of open circuit among the sub-batteries cannot occur.
The laser scribing method provided in the embodiments of the present application is described in detail above, and in addition, the embodiments of the present application also provide a solar cell, which is shown with reference to fig. 8 and includes:
the photoelectric conversion device comprises a substrate, a first electrode layer and a photoelectric conversion layer, wherein the first electrode layer is arranged on the substrate and is provided with a first laser scribing groove;
the photoelectric conversion layer is provided with a second laser scribing groove; the first side wall of the second laser scribing groove close to the first laser scribing groove and the bottom of the second laser scribing groove form an obtuse angle.
Further comprising:
a second electrode layer is formed on the photoelectric conversion layer and at least covers the first side wall and the bottom of the second laser scribing groove;
the second electrode layer is provided with a third laser scribing groove, and the third laser scribing groove is close to the second laser scribing groove and far away from the first laser scribing groove.
The foregoing is merely a preferred embodiment of the present application and, although the present application discloses the foregoing preferred embodiments, the present application is not limited thereto. Those skilled in the art can now make numerous possible variations and modifications to the disclosed embodiments, or modify equivalent embodiments, using the methods and techniques disclosed above, without departing from the scope of the claimed embodiments. Therefore, any simple modification, equivalent change and modification made to the above embodiments according to the technical essence of the present application still fall within the protection scope of the technical solution of the present application without departing from the content of the technical solution of the present application.
Claims (10)
1. A laser scribing method, comprising:
providing a substrate, wherein the substrate is provided with a first electrode layer and a photoelectric conversion layer positioned on the first electrode layer, and the first electrode layer is provided with a first laser scribing groove;
carrying out laser scribing on the photoelectric conversion layer to obtain a second laser scribing groove; the first side wall of the second laser scribing groove close to the first laser scribing groove and the bottom of the second laser scribing groove form an obtuse angle.
2. The method of claim 1, wherein laser scribing the photoelectric conversion layer to obtain a second laser scribing groove comprises:
when the photoelectric conversion layer is subjected to laser scribing in a region close to the first laser scribing groove, the photoelectric conversion layer and laser form an obtuse angle, and the second laser scribing groove is obtained.
3. The method according to claim 2, wherein the central wavelength of the laser light is determined according to a material of the photoelectric conversion layer.
4. The method of claim 1, further comprising:
and forming a second electrode layer on the photoelectric conversion layer, wherein the second electrode layer at least covers the first side wall and the bottom of the second laser scribing groove.
5. The method of claim 4, further comprising:
and carrying out laser scribing on the second electrode layer in the area close to the second laser scribing groove to obtain a third laser scribing groove, wherein the depth of the third laser scribing groove is the sum of the thickness of the photoelectric conversion layer and the thickness of the second electrode layer.
6. The method of any one of claims 1-5, wherein the depth of the first laser scribe is the thickness of the first electrode layer, and the depth of the second laser scribe is the thickness of the photoelectric conversion layer.
7. The method according to any one of claims 1 to 5, wherein the photoelectric conversion layer is an organic photoelectric conversion layer, a CIGS photoelectric conversion layer, a CdTe photoelectric conversion layer, or a perovskite photoelectric conversion layer.
8. The method of any of claims 1-5, wherein the first sidewall makes an obtuse angle with the bottom of the second laser scribe of less than 150 °.
9. A solar cell, comprising:
the photoelectric conversion device comprises a substrate, a first electrode layer and a photoelectric conversion layer, wherein the first electrode layer is arranged on the substrate and is provided with a first laser scribing groove;
the photoelectric conversion layer is provided with a second laser scribing groove; the first side wall of the second laser scribing groove close to the first laser scribing groove and the bottom of the second laser scribing groove form an obtuse angle.
10. The solar cell of claim 9, further comprising:
a second electrode layer is formed on the photoelectric conversion layer and at least covers the first side wall and the bottom of the second laser scribing groove;
the second electrode layer is provided with a third laser scribing groove, and the third laser scribing groove is close to the second laser scribing groove and far away from the first laser scribing groove.
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