CN113889994A - IGBT overvoltage protection device - Google Patents
IGBT overvoltage protection device Download PDFInfo
- Publication number
- CN113889994A CN113889994A CN202111174249.0A CN202111174249A CN113889994A CN 113889994 A CN113889994 A CN 113889994A CN 202111174249 A CN202111174249 A CN 202111174249A CN 113889994 A CN113889994 A CN 113889994A
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- Prior art keywords
- igbt
- piezoresistor
- tvs
- resistor
- discharge resistor
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- 230000000087 stabilizing effect Effects 0.000 claims abstract description 14
- 230000002457 bidirectional effect Effects 0.000 claims description 3
- 230000008859 change Effects 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 6
- 230000001052 transient effect Effects 0.000 abstract description 4
- 230000001419 dependent effect Effects 0.000 description 7
- 238000007599 discharging Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
- H02H7/20—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment
- H02H7/205—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment for controlled semi-conductors which are not included in a specific circuit arrangement
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
- H02H9/044—Physical layout, materials not provided for elsewhere
Abstract
The invention belongs to the technical field of power electronics, and particularly relates to an IGBT overvoltage protection device which comprises a gate drive circuit, an IGBT, a first piezoresistor and a second piezoresistor, wherein the gate drive circuit is connected with a gate of the IGBT through a discharge resistor, the discharge resistor is connected with a source electrode of the IGBT through a first TVS (transient voltage suppressor), the gate drive circuit is connected with the gate of the IGBT through the discharge resistor, the discharge resistor is connected with the source electrode of the IGBT through the first TVS, and the discharge resistor is connected with the first piezoresistor through a first voltage stabilizing diode and a second voltage stabilizing diode which are arranged in a reverse direction. The invention can implement pre-stage overvoltage protection on the IGBT grid electrode, keep the IGBT in linear work, achieve the effect of reducing the overvoltage of the collector and the emitter, reduce the surge voltage along with the increase of the active clamp, and carry out voltage clamping when the nonlinear characteristic of the piezoresistor bears the overvoltage, thereby protecting the post-stage circuit.
Description
Technical Field
The invention relates to the technical field of power electronics, in particular to an IGBT overvoltage protection device.
Background
With the rapid development of power electronic technology, the application of the IGBT switching element is increasingly widespread. The IGBT, which is the most important power semiconductor device in power electronic systems, has durability and a service life related to the reliability of the entire system. The reliability of the IGBT, like other electronic devices, depends on the protection circuit in addition to the device performance that the IGBT can provide, and therefore how to design a reliable protection circuit is a difficult and critical issue for power electronic systems.
The IGBT has the advantages of both a power transistor and a power MOSFET, can work under the condition of high frequency, and is easy to drive and close. However, in practical applications, it can be easily damaged by electrostatic discharge (ESD), Electrical Fast Transient (EFT) or overvoltage caused by miller effect, so it is necessary to design a corresponding IGBT driving overvoltage protection circuit to ensure that the IGBT gate is not damaged by overvoltage.
Disclosure of Invention
Technical problem to be solved
Aiming at the defects of the prior art, the invention provides an IGBT overvoltage protection device, which solves the problem that in the practical application process of an IGBT, the IGBT can be easily damaged by electrostatic discharge, electric fast transient or overvoltage caused by Miller effect, so that a corresponding IGBT driving overvoltage protection circuit needs to be designed to ensure that an IGBT grid is not damaged by the overvoltage.
The second technical proposal.
The invention specifically adopts the following technical scheme for realizing the purpose:
an IGBT overvoltage protection device comprises a gate drive circuit, an IGBT, a first voltage dependent resistor and a second voltage dependent resistor, the gate drive circuit is connected with the gate of the IGBT through a discharge resistor, the discharge resistor is connected with the source stage of the IGBT through a first TVS tube, the first TVS tube is used for protecting the grid electrode of the IGBT, the discharge resistor is connected with the first piezoresistor through a first voltage stabilizing diode and a second voltage stabilizing diode which are arranged in reverse, the first and second zener diodes are used to stabilize the gate voltage of the IGBT, a plurality of second TVS tubes and first resistors are connected in series between the drain and the gate of the IGBT, the second TVS tube and the first resistor are used to slow down the rate of change of the IGBT collector current, one end of the first resistor, which is far away from the second TVS tube, is connected with the second piezoresistor, and the first piezoresistor and the second piezoresistor are grounded through the second resistor.
Further, the first TVS transistor is a bidirectional TVS diode.
Furthermore, the second TVS tube is a unidirectional diode, the anode of the second TVS tube is connected with the grid electrode of the IGBT through a first resistor, the cathode of the second TVS tube is connected with the drain electrode of the IGBT, and the number of the second TVS tubes is 4.
Further, the first piezoresistor and the second piezoresistor are both 10D121K piezoresistors.
(III) advantageous effects
Compared with the prior art, the invention provides an IGBT overvoltage protection device, which has the following beneficial effects:
the invention uses the discharge resistor, the first TVS tube, the reverse first voltage stabilizing diode and the second voltage stabilizing diode which are serially discharged to implement the pre-stage overvoltage protection on the IGBT grid electrode, a plurality of second TVS tubes and first resistors R1 are serially connected between the drain electrode and the grid electrode of the IGBT to keep the IGBT in linear work, thereby achieving the effect of reducing the overvoltage of the collector emitter, the surge voltage can be reduced along with the increase of the active clamp, the piezoresistors which are respectively serially discharged with the voltage stabilizing diode and the second TVS tubes are grounded through the second resistors, the voltage clamping is carried out when the nonlinear characteristic of the piezoresistors bears the overvoltage, the protection effect is achieved on the rear-stage circuit, and the stability of the IGBT work is ensured.
Drawings
Fig. 1 is a schematic diagram of an IGBT overvoltage protection circuit of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Examples
As shown in fig. 1, x and x, an IGBT overvoltage protection device according to an embodiment of the present invention includes a gate driving circuit, an IGBT, a first voltage dependent resistor RV1 and a second voltage dependent resistor RV2, the gate driving circuit is connected to a gate of the IGBT through a discharging resistor Rg, when the gate of the IGBT is driven by the gate driving circuit, it generates a high overvoltage which may damage the gate of the IGBT, in order to protect the gate during an overvoltage event, the discharging resistor Rg is connected to a source of the IGBT through a first TVS tube, the gate of the IGBT is protected by the first TVS tube, the discharging resistor Rg is connected to a first voltage dependent resistor RV1 through a first voltage dependent diode VS1 and a second voltage dependent diode VS2 which are oppositely arranged, in order to keep an overvoltage transient below a critical limit when the IGBT is turned off, a plurality of second TVS tubes and first resistors R1 are connected in series between a drain and the gate of the IGBT, and an active clamping technique is applied, the change rate of the IGBT collector current is slowed down by the second TVS tube and the first resistor R1, when the collector emitter voltage of the IGBT exceeds a preset threshold value, the IGBT is partially conducted, then the IGBT is kept in linear operation, the falling rate of the collector current is reduced, the collector emitter overvoltage is reduced, one end of the first resistor R1, which is far away from the second TVS tube, is connected with the second piezoresistor RV2, the first piezoresistor RV1 and the second piezoresistor RV2 are grounded through the second resistor R2, the grid voltage of the IGBT is stabilized by the first voltage stabilizing diode VS1 and the second voltage stabilizing diode VS2, and the IGBT tube is secondarily protected by voltage division through the first piezoresistor RV1 and the second piezoresistor RV2 in the later stage.
In some embodiments, the first TVS transistor is a bidirectional TVS diode.
In some embodiments, the second TVS tube is a unidirectional diode, an anode of the second TVS tube is connected to a gate of the IGBT through a first resistor R1, a cathode of the second TVS tube is connected to a drain of the IGBT, the number of the second TVS tubes is 4, when a collector emitter voltage of the IGBT exceeds a predetermined threshold, the IGBT is partially turned on, and then the IGBT is kept in linear operation, so that a rate of decrease in a collector current is reduced, so that a collector emitter overvoltage is reduced, that is, a surge voltage can be reduced as active clamping increases.
In some embodiments, the first varistor RV1 and the second varistor RV2 are both 10D121K varistors.
Finally, it should be noted that: although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that changes may be made in the embodiments and/or equivalents thereof without departing from the spirit and scope of the invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (4)
1. The utility model provides a IGBT overvoltage crowbar, includes gate drive circuit, IGBT, first piezo-resistor and second piezo-resistor, its characterized in that: the grid drive circuit is connected with the grid of the IGBT through a discharge resistor, the discharge resistor is connected with the source stage of the IGBT through a first TVS tube, the first TVS tube is used for protecting the grid of the IGBT, the discharge resistor is connected with a first piezoresistor through a first voltage stabilizing diode and a second voltage stabilizing diode which are reversely arranged, the first voltage stabilizing diode and the second voltage stabilizing diode are used for stabilizing the grid voltage of the IGBT, a plurality of second TVS tubes and a first resistor are connected in series between the drain electrode and the grid of the IGBT, the second TVS tubes and the first resistor are used for slowing down the change rate of the collector current of the IGBT, one end of the first resistor far away from the second TVS tube is connected with the second piezoresistor, and the first piezoresistor is grounded through the second piezoresistor.
2. The IGBT overvoltage protection device of claim 1, wherein: the first TVS tube is a bidirectional TVS diode.
3. The IGBT overvoltage protection device of claim 1, wherein: the second TVS tube is a one-way diode, the anode of the second TVS tube is connected with the grid electrode of the IGBT through a first resistor, the cathode of the second TVS tube is connected with the drain electrode of the IGBT, and the number of the second TVS tubes is 4.
4. The IGBT overvoltage protection device of claim 1, wherein: the first piezoresistor and the second piezoresistor are both 10D121K piezoresistors.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111174249.0A CN113889994B (en) | 2021-10-09 | 2021-10-09 | IGBT overvoltage protection device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111174249.0A CN113889994B (en) | 2021-10-09 | 2021-10-09 | IGBT overvoltage protection device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113889994A true CN113889994A (en) | 2022-01-04 |
| CN113889994B CN113889994B (en) | 2024-04-12 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111174249.0A Active CN113889994B (en) | 2021-10-09 | 2021-10-09 | IGBT overvoltage protection device |
Country Status (1)
| Country | Link |
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| CN (1) | CN113889994B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101819972A (en) * | 2009-02-09 | 2010-09-01 | 万国半导体有限公司 | Configuration of gate to drain (gd) clamp and ESD protection circuit for power device breakdown protection |
| US20160276921A1 (en) * | 2013-11-08 | 2016-09-22 | Meidensha Corporation | Protection circuit for semiconductor switching element, and power conversion device |
| CN110289601A (en) * | 2019-07-12 | 2019-09-27 | 西安电子科技大学 | For protecting the active clamp circuit for being built in driving IC of IGBT |
-
2021
- 2021-10-09 CN CN202111174249.0A patent/CN113889994B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101819972A (en) * | 2009-02-09 | 2010-09-01 | 万国半导体有限公司 | Configuration of gate to drain (gd) clamp and ESD protection circuit for power device breakdown protection |
| US20160276921A1 (en) * | 2013-11-08 | 2016-09-22 | Meidensha Corporation | Protection circuit for semiconductor switching element, and power conversion device |
| CN110289601A (en) * | 2019-07-12 | 2019-09-27 | 西安电子科技大学 | For protecting the active clamp circuit for being built in driving IC of IGBT |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113889994B (en) | 2024-04-12 |
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