CN113889541A - 一种空间用砷化镓太阳电池下电极 - Google Patents
一种空间用砷化镓太阳电池下电极 Download PDFInfo
- Publication number
- CN113889541A CN113889541A CN202111269933.7A CN202111269933A CN113889541A CN 113889541 A CN113889541 A CN 113889541A CN 202111269933 A CN202111269933 A CN 202111269933A CN 113889541 A CN113889541 A CN 113889541A
- Authority
- CN
- China
- Prior art keywords
- layer
- solar cell
- space
- gallium arsenide
- lower electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 title claims abstract description 14
- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 14
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 46
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 23
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 20
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 20
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052709 silver Inorganic materials 0.000 claims abstract description 13
- 239000004332 silver Substances 0.000 claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 description 16
- 239000002184 metal Substances 0.000 description 16
- 238000000034 method Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- VDUJLAVRFQNSIN-UHFFFAOYSA-N [Au].[Ge].[Ag] Chemical compound [Au].[Ge].[Ag] VDUJLAVRFQNSIN-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0735—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Sustainable Development (AREA)
- Photovoltaic Devices (AREA)
Abstract
本发明公开了一种空间用砷化镓太阳电池下电极，属于太阳电池技术领域，其特征在于，至少包括：位于电池背光面的镍层；所述镍层的厚度范围是20nm～150nm；位于镍层外表面的锗层；所述锗层的厚度范围是20nm～120nm；位于锗层外表面的银层；所述银层的厚度范围是2000nm～8000nm。
Description
技术领域
本发明属于太阳电池技术领域，具体涉及一种空间用砷化镓太阳电池下电极。
背景技术
现有的以三结砷化镓为代表的多结Ⅲ-Ⅴ族太阳电池，往往是通过化学气相沉积在圆形锗衬底上生长PN结的。对于晶格匹配正向生长的三结砷化镓太阳电池其外延片的下表面(即制备成太阳电池后的背光的表面)为p型锗衬底。目前国内外普遍采用的是金锗银电极体系，但是随着航天产业商业化进程的推进，金作为贵金属在电极材料中的成本占比很高，因此需要寻求可靠性好，成本较低，易于获得的材料进行电极体系的调整。
空间环境下使用的太阳电池的金属电极在电池工作的过程中起到电流的收集和导出的作用，是太阳电池最重要的组成部分之一。空间用太阳电池的电极除了导电性要求外，更重要的是经过地面储存和空间环境高低温交变后，仍具有高的电流收集能力，并且电极和半导体间以及各金属层间结合力高，无脱皮、分层等现象。因此，空间用太阳电池的金属电极，需要在保证欧姆接触同时，确保其经地面储存和多年空间环境后仍具有很高的牢固度。
金属镍是一种常见金属，地球上含量较高，易于获得并且价格低廉，并且在很多的航天器零部件上均有应用。因此，采用镍代替金作为p型锗接触层金属材料是一种可行的电极低成本化思路。
发明内容
本发明为解决公知技术中存在的技术问题，提供一种空间用砷化镓太阳电池下电极，能够满足空间应用的同时，降低了金属电极的材料成本，进而降低太阳电池的成本。
本发明的目的是提供一种空间用砷化镓太阳电池下电极，至少包括：
位于电池背光面的镍层；所述镍层的厚度范围是20nm～150nm；
位于镍层外表面的锗层；所述锗层的厚度范围是20nm～120nm；
位于锗层外表面的银层；所述银层的厚度范围是2000nm～8000nm。
优选地，所述镍层的厚度是20nm或80nm或150nm。
优选地，所述锗层的厚度是20nm或80nm或120nm。
优选地，所述银层的厚度是2000nm或3000nm或8000nm。
本发明具有的优点和积极效果是：
本发明利用金属镍替代了传统电极体系中的的金材料，能够实现电流收集的同时，牢固度满足空间使用要求，采用此电极后材料成本明显降低。
本发明电极采用的镍金属是工业上常用的金属材料，其低成本制备方法很多，可以进一步降低电池的工艺成本。
附图说明
图1为本发明优选实施例的结构示意图。
具体实施方式
为能进一步了解本发明的发明内容、特点及功效，兹例举以下实施例，并配合附图详细说明如下：
如图1所示，本发明的技术方案为：
一种空间用砷化镓太阳电池下电极，金属镍与外延片背光面基底接触，金属银位于最外层。自上而下依次为：
位于电池1背光面的镍层2；所述镍层的厚度范围是20nm～150nm；
位于镍层外表面的锗层3；所述锗层的厚度范围是20nm～120nm；
位于锗层外表面的银层4；所述银层的厚度范围是2000nm～8000nm。
上述空间用砷化镓太阳电池下电极的成型工艺为：
1、电极制备
多层金属电极采用电子束真空蒸镀的方式，将外延片放在夹具上待蒸镀表面朝下放入真空室中。将金属放入真空设备的坩埚中熔化平整待用，蒸镀过程对衬底无需加热，设定镍锗银的厚度分别为80nm、80nm、3000nm。在气压达到1×10-3Pa以下时开始依次蒸镀。
2、烧结加固
将制备完金属电极的样品放入真空烧结炉或惰性气体保护的气氛炉中，在330℃下进行烧结加固30min。待冷却至100℃以下后取出。
三层金属电极设计：与外延片下电极材料p型锗接触层为镍，镍层厚度(20nm—150nm)，锗层厚度(20nm—120nm)，银层厚度(2000nm—8000nm)。其中金属层可以是由真空蒸镀法、电镀法、化学镀或者磁控溅射法制备。热处理温度可以是280℃-380℃。
以上所述仅是对本发明的较佳实施例而已，并非对本发明作任何形式上的限制，凡是依据本发明的技术实质对以上实施例所做的任何简单修改，等同变化与修饰，均属于本发明技术方案的范围内。
Claims (4)
1.一种空间用砷化镓太阳电池下电极，其特征在于，至少包括：
位于电池背光面的镍层；所述镍层的厚度范围是20nm～150nm；
位于镍层外表面的锗层；所述锗层的厚度范围是20nm～120nm；
位于锗层外表面的银层；所述银层的厚度范围是2000nm～8000nm。
2.根据权利要求1所述的空间用砷化镓太阳电池下电极，其特征在于，所述镍层的厚度是20nm或80nm或150nm。
3.根据权利要求1所述的空间用砷化镓太阳电池下电极，其特征在于，所述锗层的厚度是20nm或80nm或120nm。
4.根据权利要求1所述的空间用砷化镓太阳电池下电极，其特征在于，所述银层的厚度是2000nm或3000nm或8000nm。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111269933.7A CN113889541A (zh) | 2021-10-29 | 2021-10-29 | 一种空间用砷化镓太阳电池下电极 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111269933.7A CN113889541A (zh) | 2021-10-29 | 2021-10-29 | 一种空间用砷化镓太阳电池下电极 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113889541A true CN113889541A (zh) | 2022-01-04 |
Family
ID=79014421
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111269933.7A Pending CN113889541A (zh) | 2021-10-29 | 2021-10-29 | 一种空间用砷化镓太阳电池下电极 |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113889541A (zh) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201041088A (en) * | 2009-05-07 | 2010-11-16 | Atomic Energy Council | Ohmic contact having silver material |
| CN106098818A (zh) * | 2016-08-26 | 2016-11-09 | 扬州乾照光电有限公司 | 一种锗基砷化镓多结柔性薄膜太阳电池及其制备方法 |
| CN106449791A (zh) * | 2016-12-09 | 2017-02-22 | 中国科学院微电子研究所 | 一种石墨烯/砷化镓太阳电池的制备方法 |
| CN106784068A (zh) * | 2016-12-09 | 2017-05-31 | 中国科学院微电子研究所 | 一种石墨烯/砷化镓太阳电池 |
-
2021
- 2021-10-29 CN CN202111269933.7A patent/CN113889541A/zh active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201041088A (en) * | 2009-05-07 | 2010-11-16 | Atomic Energy Council | Ohmic contact having silver material |
| CN106098818A (zh) * | 2016-08-26 | 2016-11-09 | 扬州乾照光电有限公司 | 一种锗基砷化镓多结柔性薄膜太阳电池及其制备方法 |
| CN106449791A (zh) * | 2016-12-09 | 2017-02-22 | 中国科学院微电子研究所 | 一种石墨烯/砷化镓太阳电池的制备方法 |
| CN106784068A (zh) * | 2016-12-09 | 2017-05-31 | 中国科学院微电子研究所 | 一种石墨烯/砷化镓太阳电池 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8927392B2 (en) | Methods for forming crystalline thin-film photovoltaic structures | |
| CN107994118B (zh) | 钙钛矿太阳能电池、双层金属电极及其制备方法 | |
| CN109148616B (zh) | 硅异质结太阳电池及其制备方法 | |
| CN110400854A (zh) | 异质结太阳能电池及其制备方法 | |
| WO2010124059A2 (en) | Crystalline thin-film photovoltaic structures and methods for forming the same | |
| CN107768453A (zh) | 一种具有复合背电极的碲化镉薄膜电池及其制备方法 | |
| CN108807675A (zh) | 一种表面钝化钙钛矿薄膜的太阳能电池制备方法 | |
| CN101615638A (zh) | 具有Te缓冲层的CdTe薄膜太阳电池 | |
| CN110085683A (zh) | 无掺杂晶体硅异质结太阳能电池及其制备方法 | |
| CN218788382U (zh) | 一种高效异质结太阳能电池 | |
| US4342879A (en) | Thin film photovoltaic device | |
| CN111524984A (zh) | 一种柔性砷化镓太阳能电池芯片及其制作方法 | |
| CN110649165B (zh) | 一种以四苯基联苯二胺衍生物为空穴传输材料的钙钛矿电池 | |
| CN114512508A (zh) | 一种基于钙钛矿/TOPCon的叠层太阳能电池及其制备方法 | |
| CN207398154U (zh) | 硅异质结太阳电池 | |
| CN113889541A (zh) | 一种空间用砷化镓太阳电池下电极 | |
| CN106409958B (zh) | 基于石墨衬底的倒装三结太阳电池及其制备方法 | |
| CN111128747A (zh) | 一种双梯度带隙cigs太阳能电池的叠层吸收层的制备方法 | |
| US20120288986A1 (en) | Electroplating method for depositing continuous thin layers of indium or gallium rich materials | |
| CN110416329A (zh) | 一种晶体硅太阳电池 | |
| CN104167472B (zh) | 一种异质结太阳能电池及其制备方法 | |
| CN112599613A (zh) | 一种与锗结合的空间用砷化镓太阳电池电极制备方法 | |
| CN207398153U (zh) | 硅异质结太阳电池 | |
| CN102412335B (zh) | 太阳能晶片及其制备方法 | |
| CN101222000A (zh) | 双层石墨导电膏作为CdTe电池的背电极过渡层结构 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20220104 |