CN113885103A - Novel infrared stealth material, preparation method and application - Google Patents

Novel infrared stealth material, preparation method and application Download PDF

Info

Publication number
CN113885103A
CN113885103A CN202111127984.6A CN202111127984A CN113885103A CN 113885103 A CN113885103 A CN 113885103A CN 202111127984 A CN202111127984 A CN 202111127984A CN 113885103 A CN113885103 A CN 113885103A
Authority
CN
China
Prior art keywords
gst
layer
infrared stealth
ge2sb2te5
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN202111127984.6A
Other languages
Chinese (zh)
Other versions
CN113885103B (en
Inventor
张检发
全聪
邹景岚
朱志宏
袁晓东
徐威
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National University of Defense Technology
Original Assignee
National University of Defense Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National University of Defense Technology filed Critical National University of Defense Technology
Priority to CN202111127984.6A priority Critical patent/CN113885103B/en
Publication of CN113885103A publication Critical patent/CN113885103A/en
Application granted granted Critical
Publication of CN113885103B publication Critical patent/CN113885103B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)

Abstract

The invention discloses a preparation method and application of a novel infrared stealth material, which comprises a first GST (Ge2Sb2Te5) phase change alloy layer, a Mo nano film, a second GST phase change alloy layer and a Mo film reflection layer, wherein the Mo nano film layer is arranged between the first GST phase change alloy layer and the second GST phase change alloy layer, and the Mo film reflection layer is positioned on one side of the second GST phase change layer, which is far away from the Mo nano film layer; the method comprises the following steps: step 1: the absorption rate, the refractive index and the transmittance of the multilayer film structure are theoretically calculated by utilizing a transmission matrix and simulation software such as Comsol; step 2: and changing the thickness of each layer of the multilayer film structure to obtain the optimized film structure and thickness. The invention allows selective radiation of the device to have two distinct states, a "stealth" state and a "non-stealth" state, by switching the GST between crystalline and amorphous states. The research is of great significance to the research on the infrared stealth aspect.

Description

Novel infrared stealth material, preparation method and application
Technical Field
The invention relates to the technical field of preparation of stealth materials, in particular to a preparation method and application of a novel infrared stealth material.
Background
Due to the rapid development of infrared detection systems and the significant improvement of detection accuracy, the safety of military equipment and facilities and the survivability on the battlefield are seriously threatened, wherein the most serious influence is military targets with high-power engines, such as tanks, fighters, ships and warships. Since they generate high temperatures when moving, this results in a large increase in the amount of infrared radiation of the target, which creates a large radiation contrast with the background, and ultimately increases the probability that the target will be detected. The infrared stealth material can weaken the infrared radiation heat of the target by coating the infrared stealth material on the surface of the target, and effectively reduce the probability of the target being detected and identified, thereby greatly improving the survival capacity of the military target on the battlefield. Therefore, the research on the infrared stealth materials draws wide attention of various military strong countries in the world, and a great amount of manpower, material resources and financial resources are invested.
The core of the target capable of realizing infrared stealth is infrared stealth material. By using infrared stealth materials, the target can control its own infrared radiation characteristics well, and in particular can greatly reduce the infrared radiance within the atmospheric window band. The Stefan-Boltzmann law shows that the infrared radiation quantity of the target and the emissivity of the surface of the target form a positive correlation and are in direct proportion to the fourth power of the absolute temperature of the surface of the target. Thus, we can reduce the amount of infrared radiation of the target from two aspects: firstly, controlling the temperature of the target surface; the second is to reduce the emissivity of the target surface. The former can be mainly achieved by adding heat absorbing materials, heat insulating materials, and the like, and the latter is mainly achieved by using films, paints, and the like.
However, the traditional infrared stealth material can achieve the purposes of stealth and camouflage by reducing the emissivity of the target in the infrared band range. However, this approach may reduce the infrared radiation and the likelihood of detection of the object to some extent. However, due to the reduction of the emissivity, the heat of the object is accumulated continuously, the temperature of the object is increased continuously, and the infrared radiation amount of the object is increased continuously, so that the infrared stealth is realized by simply changing the emissivity of the object at the infrared window, which is a great disadvantage, and the actual requirements of people cannot be met. On the other hand, once the traditional infrared stealth material is prepared, the infrared emission characteristic of the traditional infrared stealth material is fixed, and the infrared radiation and stealth characteristic of the traditional infrared stealth material cannot be dynamically adjusted according to needs.
Disclosure of Invention
1. Technical problem to be solved
The invention aims to solve the problems that in the prior art, (1) the temperature of an object is continuously increased due to the fact that the heat of the object is continuously accumulated due to the reduction of the emissivity, and the infrared radiation quantity of the object is continuously increased; (2) because the material characteristics are fixed, the traditional infrared stealth material cannot dynamically adjust the infrared radiation and the stealth characteristics according to the requirements, and the preparation method and the application of the novel infrared stealth material are provided.
2. Technical scheme
In order to achieve the purpose, the invention adopts the following technical scheme:
the application of a novel infrared stealth material combines a phase change material GST alloy and metal Mo to form a special multilayer film structure, the structure consists of four parts, a GST layer researched by us is arranged between two ultrathin Mo layers, and the structural parameters are as follows: the bottom and middle Mo layers were 50 and 10nm, respectively, and the top and middle GST layers were 340 and 600nm, respectively.
The novel infrared stealth material comprises a first GST (Ge2Sb2Te5) phase-change alloy layer, a Mo nano film, a second GST (Ge2Sb2Te5) phase-change alloy layer and a Mo film reflection layer, wherein the Mo nano film layer is arranged between the first GST (Ge2Sb2Te5) phase-change alloy layer and the second GST (Ge2Sb2Te5) phase-change alloy layer, and the Mo film reflection layer is positioned on one side, far away from the Mo nano film layer, of the second GST (Ge2Sb2Te5) phase-change alloy layer.
Preferably, the thickness of the first GST (Ge2Sb2Te5) phase-change alloy layer is 340 nm.
Preferably, the thickness of the second GST (Ge2Sb2Te5) phase-change alloy layer is 600 nm.
Preferably, the thickness of the Mo nano film layer is 10 nm.
Preferably, the thickness of the Mo thin film reflecting layer is 50 nm.
The invention also provides a preparation method of the novel infrared stealth material, which comprises the following steps:
step 1: theoretical calculation is carried out on the absorptivity, the refractive index and the transmittance of the multilayer film structure by utilizing a transmission matrix and simulation software such as Comsol and the like, and firstly, multilayer film reflection and absorption spectrums under the normal incidence condition are obtained;
step 2: and changing the thickness of each layer of the multilayer film structure to obtain the optimized film structure and thickness.
Preferably, the absorption rate in step 1 is determined, and at the same time, the absorption characteristics of the sample at oblique incidence are analyzed.
Preferably, the multilayer film structure in step 2 may be prepared by magnetron sputtering, electron beam evaporation, pulsed laser deposition, and the like.
3. Advantageous effects
Compared with the prior art, the invention has the advantages that:
(1) in the invention, aiming at the metal Mo which is researched at present and has excellent infrared characteristic, high temperature resistance and good thermal stability, a high temperature resistant perfect absorber structure based on Mo is provided. The structure is composed of a Mo/Ge multilayer film. Theoretical calculation is carried out on the absorptivity of the multilayer film structure through the transmission matrix, and the relation among the absorptivity, the transmissivity and the emissivity of the multilayer film structure, the wavelength of incident light and the incident angle is obtained. From the calculation results, the structure can be well matched with the atmospheric infrared window, has higher absorptivity in the atmospheric absorption band (5-8 microns), and the maximum absorption is close to 100%, and has lower absorptivity in the infrared window band with high atmospheric transmittance. This well meets the practical need for selective infrared stealth of a target. Meanwhile, the wavelength selection and the infrared stealth performance of the proposed multilayer film structure are obviously superior to those of a double-layer film structure.
(2) In the invention, a phase-change adjustable GST material is introduced, and an infrared heat radiator capable of being switched and selecting wavelength is designed based on the great change of the relative dielectric constant of the phase-change material along with the state of the material. Selective radiation of the device has two distinct states, a "stealth" state and a "non-stealth" state, by switching the GST between crystalline and amorphous states. The research is of great significance to the research on the infrared stealth aspect.
Drawings
FIG. 1 is a schematic diagram of the propagation of electromagnetic waves in a multilayer medium of a novel infrared stealth material according to the present invention;
FIG. 2 is a schematic diagram of the atomic arrangement of GST material in amorphous state (left) and crystalline state (right);
FIG. 3 is a graph of the relative dielectric constants of aGST and cGST at different wavelengths;
FIG. 4 is a schematic diagram of a bilayer membrane structure based on GST alloy and metallic Mo;
FIG. 5 is a graph of the absorption of a bilayer film structure at normal incidence versus the wavelength of the incident light;
FIG. 6 is a schematic view of a tunable infrared radiator structure, which is formed of multiple layers;
FIG. 7 is a graph of the absorbance versus wavelength of incident light for two morphologies at normal incidence.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments.
Example 1:
referring to fig. 1-7, a novel infrared stealth material comprises a first Ge dielectric layer, a Mo nano-film, a second Ge dielectric layer and a Mo film emission layer, wherein the Mo nano-film is arranged between the first Ge dielectric layer and the second Ge dielectric layer, the Mo film emission layer is positioned on one side of the second Ge dielectric layer away from the Mo nano-film, the thickness of the first Ge dielectric layer is 340nm, the thickness of the second Ge dielectric layer is 600nm, the thickness of the Mo nano-film is 340nm, and the thickness of the Mo film emission layer is 600 nm.
The invention discloses a preparation method of a novel infrared stealth material, which comprises the following steps:
step 1: the reflectivity and transmissivity of the material and the ratio and transmissivity are calculated by a transmission matrix method. The multilayer media are arranged along the propagation direction z, the dielectric constant and the magnetic permeability of the ith layer of media are respectively epsilon i and mu i, the thickness is d, and if planar monochromatic electromagnetic waves are incident on a plane z equal to 0, the incident plane is an xz plane, and the incident angle is theta 0. Assuming that each layer of the medium is uniformly linear, the field in the i-th layer of the medium should satisfy the stationary electromagnetic wave equation (3-1):
Figure BDA0003279367050000061
since the medium is infinitely uniform along the y-direction, the field distribution is independent of the y-coordinate, so the first equation in (3-1) can be converted into:
Figure BDA0003279367050000062
first, study is made of E → perpendicular to the incident surface, i.e. TE mode, where E → ═ Eiy ey →.
Considering that the wave in the i-th layer medium should be a transmitted wave at the z-zi-1 interface and z-zi, equation (3-2) is taken as:
Figure BDA0003279367050000063
the solution of (1). Wherein
Figure BDA0003279367050000064
The reason why the index i is not given to Kx is that Kx has the same value in all the medium regions, as can be found from the boundary value relationship on the interface. It can be seen that this solution satisfies the shear wave condition:
Figure BDA0003279367050000065
the ith layerThe magnetic field in the mass can be controlled by
Figure BDA0003279367050000066
The following are given:
Figure BDA0003279367050000067
the constants Ai, Bi in the above expression are determined by the amplitude of the incident wave, then we use Eiy, Hix in z ═ zi:
Figure BDA0003279367050000071
from this two equations are solved:
Figure BDA0003279367050000072
wherein
Figure BDA0003279367050000073
Is the reflection coefficient at the interface z ═ zi. Writing the equation (3-7) in matrix form:
Figure BDA0003279367050000074
wherein the content of the first and second substances,
Figure BDA0003279367050000075
for a transmission matrix in a medium, di +1 zi is the (i + 1) th layer thickness, it has to be noted that this formula only applies for the case of i < N, not for the case of i N, since in the medium there is only a transmitted wave and no reflected wave in the i N +1 (i.e. z > zN region). Applying a continuous condition of the electromagnetic field tangential component on the z-zN interface, and repeating the derivation to obtain:
Figure BDA0003279367050000076
wherein
Figure BDA0003279367050000077
In equation (3-11), t is the amplitude of the transmitted wave, i.e., the amplitude of the wave transmitted into the region z > zN at zN.
Kiz in the above equation is the z-component in the i-th layer of media, i.e.
Kiz＝Kicosθi (3-13)
Where θ i is the incident angle of the wave to the i-th layer medium, which can be obtained from the known incident angle θ to the z-0 plane, from the following recursive relationship, namely:
Figure BDA0003279367050000081
assuming that the amplitude of a plane wave incident on the plane z-0 is 1 and the amplitude of a reflected wave on the plane z-0 is r, the values are obtained from (3-9) and (3-11)
Figure BDA0003279367050000082
Wherein [ T01], [ T12], …, [ TN, N +1] can be calculated from (3-10). N is the total number of layers of the medium, order
Figure BDA0003279367050000083
Therefore, (3-15) can be simplified to
Figure BDA0003279367050000084
The transmitted wave amplitude t and the reflected wave amplitude r of the multilayer medium thus obtained are respectively:
Figure BDA0003279367050000091
for the structure we are studying, in the case of N-4, so substituting the above equation yields:
Figure BDA0003279367050000092
Figure BDA0003279367050000093
Figure BDA0003279367050000094
Figure BDA0003279367050000095
Figure BDA0003279367050000096
Figure BDA0003279367050000097
the transmission coefficient t and the reflection coefficient r can be obtained by taking the formula (3-18). Thus, the transmittance T, reflectance R and absorptance a can be obtained as follows:
Figure BDA0003279367050000098
therefore, according to the transmission matrix formula obtained by the derivation above, we first consider the incident light wave as normal incidence (i.e. the case where θ 0 is 0), and we obtain the relationship between the transmittance, reflectance and absorbance and wavelength of the multilayer film structure by calculation; it can be seen from the figure that, when the incident light is incident perpendicular to the multilayer film structure, the optical characteristics exhibited by the multilayer film structure completely conform to the design concept of the multilayer film structure, and the absorption rate in the infrared atmospheric window is low, while the absorption rate in the non-atmospheric window is high. Also, as can be seen from the figure, the transmittance of the multilayer film structure is almost zero in the infrared wavelength range.
Furthermore, there are two absorption peaks M1 and M2 in the non-infrared window band of 5 to 8 μ M, corresponding to wavelengths of 5.4 μ M and 6.4 μ M, respectively, and absorbances corresponding to the wavelengths of 0.8903 and 0.9935, respectively, which are much higher than their absorbances in the infrared window band.
In order to better study the optical characteristics of the multilayer film structure, the relationship between the absorption rate of the multilayer film structure in the TE mode and different incident angles and different wavelengths is studied, as shown in the figure; we can intuitively find that in TE mode, the absorption of incident light by the multilayer film structure mainly occurs in the wavelength band of 5 to 8 μm, which just meets the requirement of infrared stealth material, i.e. the absorption rate is lower in the infrared window band and higher in the non-infrared window band (5-8 μm). The yield was found. However, we can also find from the figure that in the 5-8 μm band, the absorption characteristic of the material is basically kept unchanged when the incident angle is less than 40 degrees, the absorption of the structure can be kept at a higher level, but beyond this range, the absorption of the structure starts to gradually decrease, and the absorption bandwidth becomes narrower.
For light in which the incident light is in the TM mode, i.e. the magnetic field direction is perpendicular to the plane of incidence, there is no component in the z direction. Similarly, we can calculate by using the method of the transmission matrix, and derive it, and we only need to perform the variable substitution on the result of the above equation for the light wave incident in the TM mode, E → → H →, H → → E →, μ → epsilon, epsilon → μ. In the same way, the relation between the absorption rate of the multilayer film structure and different incident angles and different wavelengths in the TM mode is calculated by using the transmission matrix, and the obtained result is shown as a graph;
in the invention, a phase change material GST alloy is combined with metal Mo to form a special multilayer film structure, the structure consists of four parts, a GST layer researched by us is arranged between two ultrathin Mo layers, and the structural parameters are as follows: the bottom and middle Mo layers were 50 and 10 nanometers, respectively, and the top and middle GST layers were 340 and 600 nanometers, respectively;
GST is a widely used phase change alloy material at present. In general, it can be used to make various data storage materials (such as optical disk). It has a very outstanding characteristic: the GST alloy can be switched between a crystalline state and an amorphous state by carrying out annealing operation at 160 ℃ and 640 ℃ on the GST material; when the GST alloy is in an amorphous state, the atomic arrangement of the GST alloy is disordered and has no fixed structure and arrangement sequence, and when the GST alloy is in a crystalline state, the GST alloy is arranged neatly, so that the GST alloy in different states has quite different optical properties in an infrared band due to different atomic arrangement modes. In general, the atomic arrangement of GST is stable at room temperature, and the GST can be maintained in an annealed state for a relatively long time. When the GST is in an amorphous state and a crystalline state, the atomic arrangement is different, so that the relative dielectric constant of the GST is also greatly different;
research shows that the current infrared radiator made of GST material can have very good infrared selective radiation switch performance by switching in the two different states. However, the emissivity peak value of the radiator in the non-infrared stealth window required by us is only close to 20%, and certain defects exist in practical application, so in order to further optimize the emissivity peak value, the assumption that a GST material and metal Mo are combined is proposed, and the assumed structure is tested;
first, we studied a simple bilayer structure. The study of Yurui Qu et al shows that a layer of GST film with a thickness of hundreds of nanometers is covered on the surface of the gold film, and dynamic thermal radiation regulation can be realized by changing the phase state of GST. Similarly, we replace the gold in the structure with metal Mo, and also propose a double-layer film structure infrared radiator with tunable function:
the structure consists of an upper GST alloy layer and a lower metal Mo layer, and the thicknesses of the upper GST alloy layer and the lower metal Mo layer are 350nm and 10nm respectively. Similarly, the infrared characteristics of the structure are researched through the transmission matrix, and the relation between the absorption rate of the double-layer film structure and the wavelength of incident light under the normal incidence condition is obtained;
as can be seen from the figure, when GST in the double-layer membrane structure is in an indeterminate form (aGST), the infrared characteristic of the GST is just matched with an atmospheric window, and the GST has an absorption rate close to 40% in a non-infrared window wave band, so that the purpose of infrared stealth can be well realized. When the structure is in a cGST state, the infrared characteristic of the structure cannot be matched with an atmospheric window, and the stealth function cannot be realized. The structure can realize the switching between the stealth state and the non-stealth state by switching between the two states. However, this structure has insufficient wavelength selectivity, and particularly, when GST is in an amorphous form (aGST), the absorption/emission of the resonance peak is low.
Further, we propose a multilayer film structure. The wavelength selectivity of the structure is obviously superior to that of a double-layer film structure. As can be seen from the figure, there is a certain wavelength selectivity in the absorption for the structure composed of GST in both forms. The wavelength selectivity of the GST alloy in an indefinite form is matched with an atmospheric window, the GST alloy has high absorptivity in a non-infrared window band and can realize perfect absorption, and the GST alloy has low absorptivity in an infrared window band and can well realize the infrared stealth purpose. For the crystalline GST alloy, the absorption rate of the structure formed by the GST alloy is higher in the infrared window wave band, and the absorption rate of the structure formed by the GST alloy is lower in the non-infrared window wave band, so that the infrared stealth purpose cannot be realized. Through an annealing process, switching between two states of the GST alloy can be realized, so that the target can be converted between a stealth state and a non-stealth state, and the method has important significance for self-adaption and intelligent infrared stealth.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be considered to be within the technical scope of the present invention, and the technical solutions and the inventive concepts thereof according to the present invention should be equivalent or changed within the scope of the present invention.

Claims (9)

1. The application of the novel infrared stealth material is characterized in that a phase change material GST alloy is combined with metal Mo to form a special multilayer film structure, the structure consists of four parts, a GST layer researched by us is arranged between two ultrathin Mo layers, and the structural parameters are as follows: the bottom and middle Mo layers were 50 and 10nm, respectively, and the top and middle GST layers were 340 and 600nm, respectively.
2. The novel infrared stealth material comprises a first GST (Ge2Sb2Te5) phase-change alloy layer, a Mo nano film, a second GST (Ge2Sb2Te5) phase-change alloy layer and a Mo film reflection layer, and is characterized in that the Mo nano film layer is arranged between the first GST (Ge2Sb2Te5) phase-change alloy layer and the second GST (Ge2Sb2Te5) phase-change alloy layer, and the Mo film reflection layer is positioned on one side, away from the Mo nano film layer, of the second GST (Ge2Sb2Te5) phase-change alloy layer.
3. A novel infrared stealth material as defined in claim 2, wherein said first GST (Ge2Sb2Te5) phase change alloy layer has a thickness of 340 nm.
4. The novel infrared stealth material of claim 2 wherein the second GST (Ge2Sb2Te5) phase change alloy layer has a thickness of 600 nm.
5. The novel infrared stealth material as claimed in claim 2, wherein the thickness of the Mo nano thin film layer is 10 nm.
6. The novel infrared stealth material as claimed in claim 2, wherein the thickness of the Mo thin film reflective layer is 50 nm.
7. A preparation method of a novel infrared stealth material is characterized by comprising the following steps:
step 1: theoretical calculation is carried out on the absorptivity, the refractive index and the transmittance of the multilayer film structure by utilizing a transmission matrix and simulation software such as Comsol and the like, and firstly, multilayer film reflection and absorption spectrums under the normal incidence condition are obtained;
step 2: and changing the thickness of each layer of the multilayer film structure to obtain the optimized film structure and thickness.
8. The method for preparing a novel infrared stealth material according to claim 7, wherein the absorbance in step 1 is analyzed, and the absorption characteristics at oblique incidence are analyzed.
9. The method for preparing a novel infrared stealth material as claimed in claim 7, wherein the multilayer film structure in step 2 can be prepared by magnetron sputtering, electron beam evaporation, pulsed laser deposition, and the like.
CN202111127984.6A 2021-09-26 2021-09-26 Novel infrared stealth material, preparation method and application Active CN113885103B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202111127984.6A CN113885103B (en) 2021-09-26 2021-09-26 Novel infrared stealth material, preparation method and application

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202111127984.6A CN113885103B (en) 2021-09-26 2021-09-26 Novel infrared stealth material, preparation method and application

Publications (2)

Publication Number Publication Date
CN113885103A true CN113885103A (en) 2022-01-04
CN113885103B CN113885103B (en) 2023-03-10

Family

ID=79006793

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202111127984.6A Active CN113885103B (en) 2021-09-26 2021-09-26 Novel infrared stealth material, preparation method and application

Country Status (1)

Country Link
CN (1) CN113885103B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114987004A (en) * 2022-05-16 2022-09-02 中国人民解放军国防科技大学 Gas-induced-change infrared emissivity device and preparation method and application thereof

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1812118A (en) * 2004-12-02 2006-08-02 三星电子株式会社 Phase change memory device and method of fabricating the same
TW200907400A (en) * 2007-03-28 2009-02-16 Konica Minolta Opto Inc Anti-reflection film, method for production of anti-reflection film, polarizing plate using the anti-reflection film, and display device
CN110656306A (en) * 2019-10-15 2020-01-07 北京理工大学 Metal @ GST medium heterogeneous nano core-shell structure and preparation method thereof
CN111416038A (en) * 2020-04-27 2020-07-14 广东石油化工学院 GeSbTe phase change material thin film device with strong binding capacity and low resistance value
CN113727603A (en) * 2019-04-03 2021-11-30 瑞泽恩制药公司 Methods and compositions for inserting antibody coding sequences into safe harbor loci

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1812118A (en) * 2004-12-02 2006-08-02 三星电子株式会社 Phase change memory device and method of fabricating the same
TW200907400A (en) * 2007-03-28 2009-02-16 Konica Minolta Opto Inc Anti-reflection film, method for production of anti-reflection film, polarizing plate using the anti-reflection film, and display device
CN113727603A (en) * 2019-04-03 2021-11-30 瑞泽恩制药公司 Methods and compositions for inserting antibody coding sequences into safe harbor loci
CN110656306A (en) * 2019-10-15 2020-01-07 北京理工大学 Metal @ GST medium heterogeneous nano core-shell structure and preparation method thereof
CN111416038A (en) * 2020-04-27 2020-07-14 广东石油化工学院 GeSbTe phase change material thin film device with strong binding capacity and low resistance value

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114987004A (en) * 2022-05-16 2022-09-02 中国人民解放军国防科技大学 Gas-induced-change infrared emissivity device and preparation method and application thereof

Also Published As

Publication number Publication date
CN113885103B (en) 2023-03-10

Similar Documents

Publication Publication Date Title
CA1139596A (en) Multilayer mirror with maximum reflectance
US4312915A (en) Cermet film selective black absorber
CA2833862C (en) Passively variable emittance device and method for making the same
Lampert Coatings for enhanced photothermal energy collection I. Selective absorbers
CA2084537A1 (en) Durable low-emissivity solar control thin film coating
US4721349A (en) Transparent heat-mirror
Farooq et al. High performance sputtered Ni: SiO2 composite solar absorber surfaces
CN113885103B (en) Novel infrared stealth material, preparation method and application
CN102249009A (en) Thermochromism emittance-variable thermal control device for spacecrafts
Kachan et al. High-absorbing gradient multilayer coatings with silver nanoparticles
Craighead et al. Optical properties of selectively absorbing metal insulator composite films
CN110895357A (en) Preparation scheme of novel high-transmittance vanadium dioxide thin film element
CN115508921A (en) Visible light compatible near-infrared laser stealth antireflection film
CN100489597C (en) One-dimensional metal photon dielectric crystal and its design method and application
CN108196332B (en) Medium wave infrared reflection filtering film capable of filtering carbon dioxide infrared absorption interference
Hovel Transparency of thin metal films on semiconductor substrates
Zhi-chang et al. A multilayer film based on thin-film interference and impedance matching for dual-laser and infrared stealth as well as thermal management
CN115826110A (en) Intermediate infrared detection structure and multiband adjustable wave-absorbing structure
CN114231922B (en) VO (volatile organic compound) 2 Method for preparing base multilayer film structure and product thereof
CN102848637A (en) Composite multilayer film infrared absorption layer
CN109457219A (en) A kind of middle low temperature coating for selective absorption of sunlight spectrum and preparation method thereof
US4294890A (en) Method for preventing reflection
CN218122284U (en) Intermediate infrared detection structure and multiband adjustable wave-absorbing structure
US3421811A (en) Coated optical devices
CN116088077A (en) Dual-wave dynamic heat camouflage structure and optimization method thereof

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant