CN113884849B - Method and device for testing light-emitting diode device - Google Patents
Method and device for testing light-emitting diode device Download PDFInfo
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- CN113884849B CN113884849B CN202010554619.2A CN202010554619A CN113884849B CN 113884849 B CN113884849 B CN 113884849B CN 202010554619 A CN202010554619 A CN 202010554619A CN 113884849 B CN113884849 B CN 113884849B
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Abstract
The application is applicable to the technical field of semiconductor photoelectricity, and provides a method and a device for testing a light emitting diode device, wherein the method comprises the following steps: inputting a test voltage to a light-emitting diode device, obtaining a light-emitting area of the light-emitting diode device based on the test voltage, and determining performance parameters of the light-emitting diode device based on the test voltage and the light-emitting area. The method and the device can improve the accuracy of testing the light-emitting diode device.
Description
Technical Field
The application belongs to the technical field of semiconductor photoelectricity, and particularly relates to a method and a device for testing a light-emitting diode device.
Background
With the continuous development of semiconductor photoelectric technology, various light emitting diode (Light Emitting Diode, LED) devices are also becoming more and more widely used. In order to ensure the reliability of the light emitting diode device, it is generally necessary to test the light emitting diode device.
In the prior art, a light emitting area of the light emitting diode device capable of emitting light may be preset based on a structure of the light emitting diode device, and then, in a test process, a performance parameter of the light emitting diode device is determined based on a test voltage provided to the light emitting diode device and the preset light emitting area.
However, since the light-emitting stability of different led devices may be different, and the factor of light-emitting stability is not considered in the process of presetting the light-emitting area, the accuracy of the performance parameter measured by the above test method is low.
Disclosure of Invention
The embodiment of the application provides a method and a device for testing a light-emitting diode device, which can solve the problem of low accuracy of measured performance parameters.
In a first aspect, an embodiment of the present application provides a method for testing a light emitting diode device, including:
inputting a test voltage to the light emitting diode device;
acquiring a light emitting area of the light emitting diode device based on the test voltage;
and determining a performance parameter of the light emitting diode device based on the test voltage and the light emitting area.
In a possible implementation manner of the first aspect, the acquiring a light emitting area of the light emitting diode device that emits light based on the test voltage includes:
acquiring a luminous image of the light-emitting diode device based on the test voltage;
the light emitting area is determined based on the light emitting image.
In a possible implementation manner of the first aspect, the determining the light emitting area based on the light emitting image includes:
performing binarization processing on the luminous image to obtain a binary image corresponding to the luminous image;
and determining the light-emitting area based on the number of pixels of the white area in the binary image and a preset mapping relation, wherein the preset mapping relation is used for indicating the area of the light-emitting diode device corresponding to each pixel in the light-emitting image.
In a possible implementation manner of the first aspect, the inputting the test voltage to the light emitting diode device includes:
inputting at least one test voltage to the light emitting diode devices respectively;
the obtaining the light emitting area of the light emitting diode device based on the test voltage includes:
respectively acquiring the light emitting areas of the light emitting diode devices which emit light under each test voltage;
the determining, based on the test voltage and the light emitting area, a performance parameter of the light emitting diode device includes:
based on at least one of the test voltages and at least one of the light emitting areas, performance parameters corresponding to each of the test voltages are determined, respectively.
In a possible implementation manner of the first aspect, before the inputting the test voltage to the light emitting diode device, the method further includes:
and presintering the light emitting diode device.
In a possible implementation manner of the first aspect, before the inputting the test voltage to the light emitting diode device, the method further includes:
acquiring a light emitting spectrum of the light emitting diode device;
and determining that the light emitting diode device emits light normally based on the light emitting spectrum.
In a possible implementation manner of the first aspect, the performance parameter includes at least one of a current density, a current efficiency and an external quantum efficiency.
In a second aspect, an embodiment of the present application provides a test apparatus for a light emitting diode device, including:
the input module is used for inputting a test voltage to the light-emitting diode device;
the first acquisition module is used for acquiring the light-emitting area of the light-emitting diode device which emits light based on the test voltage;
and the first determining module is used for determining the performance parameters of the light-emitting diode device based on the test voltage and the light-emitting area.
In a possible implementation manner of the second aspect, the first obtaining module is further configured to:
acquiring a luminous image of the light-emitting diode device based on the test voltage;
the light emitting area is determined based on the light emitting image.
In a possible implementation manner of the second aspect, the first obtaining module is further configured to:
performing binarization processing on the luminous image to obtain a binary image corresponding to the luminous image;
and determining the light-emitting area based on the number of pixels of the white area in the binary image and a preset mapping relation, wherein the preset mapping relation is used for indicating the area of the light-emitting diode device corresponding to each pixel in the light-emitting image.
In a possible implementation manner of the second aspect, the input module is further configured to input at least one of the test voltages to the light emitting diode devices respectively;
the first acquisition module is further used for respectively acquiring the light emitting areas of the light emitting diode devices which emit light under the test voltages;
the first determining module is further configured to determine performance parameters corresponding to the test voltages respectively based on at least one test voltage and at least one light emitting area.
In a possible implementation manner of the second aspect, the method further includes:
and the presintering module is used for presintering the light-emitting diode device.
In a possible implementation manner of the second aspect, the method further includes:
the second acquisition module is used for acquiring the light-emitting spectrum of the light-emitting diode device;
and the second determining module is used for determining that the light emitting diode device emits light normally based on the light emitting spectrum.
In a possible implementation manner of the second aspect, the performance parameter includes at least one of current density, current efficiency and external quantum efficiency.
In a third aspect, an embodiment of the present application provides a terminal device, including: a computing device comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor implements the method of any of the first aspects when the computer program is executed.
In a fourth aspect, embodiments of the present application provide a computer-readable storage medium, comprising: a computer readable storage medium storing a computer program, characterized in that the computer program when executed by a processor implements the method according to any of the first aspects.
In a fifth aspect, embodiments of the present application provide a computer program product for, when run on a terminal device, causing the terminal device to perform the method of any one of the first aspects.
Compared with the prior art, the embodiment of the application has the beneficial effects that: in the embodiment of the application, the test voltage can be input to the light emitting diode device, and the light emitting area of the light emitting diode device based on the test voltage can be obtained, so that the performance parameter of the light emitting diode device can be determined based on the test voltage and the light emitting area corresponding to the test voltage. Since the light emitting area is an accurate value obtained based on the provided test voltage, the accuracy of the light emitting area is not affected by the stability of the light emitting diode device, so the accuracy of the performance parameter determined based on the test voltage and the light emitting area is high.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are required for the embodiments or the description of the prior art will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a flow chart of a testing method of a light emitting diode device according to an embodiment of the present application;
fig. 2 is a schematic structural diagram of a quantum dot light emitting diode device according to an embodiment of the present disclosure;
FIG. 3 is a schematic structural diagram of a test device according to an embodiment of the present application;
FIG. 4 is a schematic view of a luminescent image according to an embodiment of the present application;
FIG. 5 is a schematic diagram of a binary image according to an embodiment of the present disclosure;
fig. 6 is a schematic functional block diagram of a testing apparatus for a light emitting diode device according to an embodiment of the present application.
Detailed Description
In the following description, for purposes of explanation and not limitation, specific details are set forth, such as particular system configurations, techniques, etc. in order to provide a thorough understanding of the embodiments of the present application. It will be apparent, however, to one skilled in the art that the present application may be practiced in other embodiments that depart from these specific details. In other instances, detailed descriptions of well-known systems, devices, circuits, and methods are omitted so as not to obscure the description of the present application with unnecessary detail.
Before explaining the present application in detail, an application scenario of the present application is described.
The Light Emitting Diode device may include a quantum dot Light Emitting Diode (Quantum Dot Light Emitting Diodes, QLED) device, an Organic Light-Emitting Diode (OLED) device, and the like, and in order to ensure the reliability of the Light Emitting Diode device, it is generally necessary to test the Light Emitting Diode device. In addition, since the stability of light emission of different light emitting diode devices may be different, for example, when the QLED emits light (especially blue light), the problem that the light emitting area is continuously changed may occur, so that the accuracy of the result tested by the test mode in the prior art is low.
To address this problem, the present application provides a test system for a light emitting diode device that includes a test device and a computing device communicatively coupled. The test device may be used to provide a hardware environment for testing the light emitting diode device, such as a recess for placement of the light emitting diode device, contact points for providing a test voltage to the light emitting diode device, etc., and may include an integrating sphere measurement device, a silicon diode measurement device, or other types of test devices. The computing device may be used to provide a software environment for testing the light emitting diode devices, such as setting test voltages and performing related data calculations, etc.
An image sensor, such as a Charge-coupled Device (CCD) or a complementary metal oxide semiconductor (Complementary Metal Oxide Semiconductor, CMOS), may be disposed in the test Device at a position opposite to the light emitting diode test Device, so that an image of the light emitting diode Device when light is emitted can be acquired, and a determination of a light emitting area of the light emitting diode Device and an area of the light emitting area can be performed. Of course, in practical applications, the light emitting area of the light emitting diode device may be determined in other manners.
It should be noted that, the computing device may include a mobile phone, a tablet computer, a wearable device, a vehicle-mounted device, a notebook computer, an Ultra-mobile personal computer (Ultra-Mobile Personal Computer, UMPC), a netbook, a personal digital assistant (Personal Digital Assistant, PDA), and the like, which have data computing capabilities, and the specific type of the computing device is not limited in the embodiments of the present application.
It should also be noted that in practical applications, the test device may also be integrated with the computing device.
The test method of the light-emitting diode device can be applied to the computing equipment, the computing equipment controls the test device to input the test voltage to the light-emitting diode device, and obtains the light-emitting area of the light-emitting diode device based on the test voltage, so that the performance parameters of the light-emitting diode device can be determined based on the test voltage and the light-emitting area corresponding to the test voltage. Since the light emitting area is an accurate value obtained based on the provided test voltage, the accuracy of the light emitting area is not affected by the stability of the light emitting diode device, so the accuracy of the performance parameter determined based on the test voltage and the light emitting area is high.
The present application will be specifically described below in conjunction with the above application scenario. The following embodiments may be combined with each other, and some embodiments may not be repeated for the same or similar concepts or processes.
Fig. 1 is a schematic flow chart of a testing method of a light emitting diode device provided by the present application. It should be noted that, the method for testing a light emitting diode device described in the present application is not limited to the specific order described in fig. 1 and the following description, and it should be understood that, in other embodiments, the sequence of part of the steps in the method for testing a light emitting diode device described in the present application may be interchanged according to actual needs, or part of the steps may be omitted or deleted. The flow shown in fig. 1 will be described in detail.
The light emitting diode device to be tested, the test device, and the computing device may be prepared, such as connecting the test device and the computing device, placing the light emitting diode device within the test device, opening a test interface in the computing device, and so forth.
For example, referring to fig. 2, a schematic structural diagram of a quantum dot light emitting diode device 100 provided in the present application includes a rectangular substrate 110 and 4T-shaped electrodes 120 disposed on the same surface of the substrate, wherein one end of each electrode 120 extends out of the substrate 110 and the other end extends into the substrate 110, wherein one end extending into the substrate 110 is provided with quantum dots so as to be capable of emitting light and form a light-emitting area, and the area of the light-emitting area is 0.004 square cm, and if the area does not emit light completely, the light-emitting area of the light-emitting area is less than 0.004 square cm. Referring to fig. 3, a schematic structural diagram of a test device 200 provided in the present application is shown, the test device 200 includes an upper cover 210 and a base 220, wherein the base 220 is provided with a groove for placing the quantum dot light emitting diode device 100, and the shape of the groove matches the shape of the quantum dot light emitting diode device 100, and the groove includes contact points contacting with the electrodes 120. The quantum dot light emitting diode device 100 as shown in fig. 2 may be placed with the electrode 220 facing down in the base of the test device 200 and then the upper cover 210 is closed.
In order to ensure that the light emitting diode device can emit light normally, the light emitting diode device may be pre-burned.
The burn-in may refer to an operation of inputting a first designated voltage or a designated current to the light emitting diode device for a first preset period of time before the light emitting diode device emits light normally.
It should be noted that, the first specified voltage and the first preset time period may be determined in advance based on the light emitting material of the tested light emitting diode device, and taking the blue light quantum dot device (i.e., the quantum dot light emitting diode device of the blue light emitting material) as shown in fig. 2 as an example, the first specified voltage may be 5 volts, and the first preset time period may be 3 seconds.
In order to ensure that the light emitting diode device can emit light normally, and in order to ensure that the test device can detect the light emitting diode device normally, the light emitting spectrum of the light emitting diode device can be obtained.
And when the light emitting spectrum is not smooth, the second designated voltage and the second preset duration can be adjusted until the light emitting spectrum is smooth. If the light emitting spectrum of the light emitting diode device can be detected through the test device, the light emitting spectrum is smooth, and the peak is in the preset peak range, the light emitting diode device can be determined to emit light normally, and meanwhile, the test device can be determined to detect the light emitting diode device normally.
It should be noted that, the second specified voltage, the second preset duration and the preset peak range may be determined in advance based on the tested light emitting diode device, for example, the quantum dot light emitting diode device shown in fig. 2 may be used as an example, the second specified voltage may be 4 v, the second preset duration may be 100 ms, and if the quantum dot light emitting diode device emits blue light, the preset peak range corresponding to the blue light may be between 450 and 480 nm.
It should be noted that, in practical applications, at least one of the steps 101 to 103 may be omitted, for example, after performing step 101 once, a plurality of tests of the led devices may be performed, where the same led device is continuously tested, step 102 may not be repeatedly performed to burn in, or step 103 may be omitted where it is determined that the led device and the test device are normal through other means.
To test the performance of the light emitting diode device, a voltage may be input to the light emitting diode device.
Wherein, according to different test modes, different test voltages can be input to the light emitting diode device in a corresponding manner. For example, in the constant current test mode, the current density of the light emitting diode device may be controlled to be constant, and the test voltage input to the light emitting diode device may be changed, so that a plurality of different test voltages set in sequence may be input; in the constant voltage test mode, the test voltage of the light emitting diode device may be controlled to be constant, and the test current input to the light emitting diode device may be changed, so that a preset test voltage may be input; in the constant brightness test mode, the brightness of the light emitting diode device can be kept constant by changing the test voltage input to the light emitting diode device, so that a plurality of different test voltages set in sequence can also be input.
It should be noted that, the magnitudes of the test voltages in the different test modes may be obtained by setting the test voltages according to the test requirements and the tested light emitting diode devices in advance, and the magnitudes of the test voltages in the embodiment of the present application are not specifically limited.
Alternatively, at least one test voltage may be input to the light emitting diode device, respectively, so that the performance parameters of the light emitting diode device under different test voltages are obtained through the subsequent step test.
The method comprises the steps of sequentially inputting test voltages to the light-emitting diode device in a voltage stepping mode by taking a third specific voltage as a starting point and a fourth specific voltage as a step length according to the specific step length, so that the performance parameters of the light-emitting diode device under a plurality of test voltages are obtained through subsequent steps. The LED device is tested in a voltage stepping mode, so that the variation condition of the performance parameters of the LED device along with the continuous increase of the test voltage can be obtained, and the accuracy of testing the LED device is further improved.
It should be noted that the third specific voltage, the fourth specific voltage, and the specific step size may be obtained by setting in advance, and by way of example, the third specific voltage may be-0.6 v, the specific step size may be 0.2 v, and the fourth specific voltage may be 6 v, so that the performance parameters of the light emitting diode device at 34 test voltages respectively can be measured.
Because the stability of the luminescence of different light emitting diode devices is different, the luminescence conditions of different light emitting diode devices can be different under the same test voltage, so that the luminescence area of the light emitting diode devices under the current test voltage can be obtained, and the accuracy of the subsequent determination of the performance parameters of the light emitting diode devices is improved.
Alternatively, a light emission image of the light emitting diode device emitting light based on the test voltage may be acquired, and the light emission area is determined based on the light emission image.
The light-emitting image may be an image obtained by photographing the light-emitting diode device, and the light-emitting image may illustrate the light-emitting condition of the light-emitting diode device.
The light emitting area may be an area of a region where the light emitting diode device actually emits light. Because of the influence of the light-emitting stability of the light-emitting diode device, the light-emitting area can be smaller than or equal to the total light-emitting area of the light-emitting diode device, taking the quantum dot light-emitting diode device as an example, when the test voltage is continuously increased, the light-emitting area of the quantum dot light-emitting diode device is also continuously increased, and the black spots (i.e. the black areas which do not emit light) are continuously reduced until the light-emitting area is equal to the total light-emitting area, i.e. the total light-emitting area of the quantum dot light-emitting diode device emits light.
From the foregoing, it is understood that an image sensor may be provided in the test device, and thus, when the light emitting diode device emits light based on the test voltage, a light emitting image of the light emitting diode device may be acquired by the image sensor.
The acquired light-emitting image may be sampled and quantized by an analog-to-digital converter, so that the light-emitting image is converted into a digital signal, which may then be stored in a storage medium such as an image memory.
Optionally, binarization processing may be performed on the light-emitting image to obtain a binary image corresponding to the light-emitting image, and the light-emitting area is determined based on the number of pixels of the white area in the binary image and a preset mapping relationship.
The preset mapping relation is used for indicating the area of the light-emitting diode device corresponding to each pixel in the luminous image.
It should be noted that the preset mapping relationship may be determined in advance. Since the distance between the image sensor and the light emitting diode device is fixed after the image sensor and the light emitting diode device are placed, the light emitting diode device is photographed by the image sensor, and for different images obtained by photographing, the actual area corresponding to each pixel in the image is a constant in the light emitting diode device. Thus, in an alternative embodiment, after the image sensor and the led device are placed, the image of the led device may be obtained by photographing the led device through the image sensor, and the ratio between the area of the led device and each pixel, that is, the size of the area corresponding to each pixel, may be determined by dividing the area of the led device by the pixels of the image of the led device. Accordingly, the preset mapping relationship may be expressed as y=ax, where y may represent a light emitting area, x may represent the number of pixels, and a may represent a ratio between an area of the light emitting diode device and each pixel.
For example, the area of the light emitting diode device is 0.004 square centimeter, the light emitting diode device is photographed, the obtained image includes 40 ten thousand pixels, the size of the area corresponding to each pixel can be 0.004/400000, and the preset mapping relationship can be expressed as y=x 0.004/400000. Then, if the white area in a certain binary image includes 20 ten thousand pixels, it may be determined that the light emitting area of the light emitting diode device is 0.002 square centimeter based on the preset mapping relationship.
The pixel gray value in the luminescent image may be obtained by an image processing program (such as a PictureBox control, a control for image processing), and then binarized and extracted to obtain a binary image, including comparing the pixel gray value with a preset gray value threshold, if the pixel gray value is smaller than or equal to the preset gray value threshold, updating the pixel gray value to 0, that is, converting the pixel gray value to black pixel, and if the pixel gray value is greater than the preset gray value threshold, updating the pixel gray value to 1, that is, converting the pixel gray value to white pixel. Wherein, black pixels in the binary image indicate that the light emitting diode device does not emit light at the corresponding position, and white pixels indicate that the light emitting diode device emits light at the corresponding position. When determining the area of a white area in a binary image, the number of pixels included in the white area may be determined according to the area of the white area (or the area of the white area may be represented by the number of pixels included in the white area), and then the number of pixels is multiplied by the preset area ratio, thereby obtaining a light emitting area.
It should be noted that the preset gray value threshold may be determined in advance.
For example, taking the quantum dot light emitting diode device shown in fig. 2 as an example, under a certain test voltage, the obtained light emitting image is shown in fig. 4, the obtained light emitting image is converted into a binary image in fig. 4, and the binary image is shown in fig. 5, and as can be seen from fig. 5, the current light emitting area is only about 30%.
Alternatively, as can be seen from the foregoing, at least one test voltage may be input to the light emitting diode device, and then the light emitting areas of the light emitting diode device that emit light at the respective test voltages may be obtained, so that the corresponding light emitting areas may be obtained for each test voltage.
When the test voltages and the corresponding light emitting areas are obtained, the performance parameters of the light emitting diode device can be determined through the subsequent steps, and it should be noted that, in practical application, each test voltage and the light emitting area corresponding to the test voltage can be determined, the performance parameters of the light emitting diode device corresponding to the test voltage can be determined through the subsequent steps, that is, the steps 104-106 are circularly executed, or, of course, a plurality of test voltages and the light emitting areas corresponding to the test voltages can be obtained, and then the performance parameters corresponding to the test voltages can be determined through the subsequent steps, that is, the steps 104-105 are circularly executed first, and then the step 106 is executed. That is, in practical application, each time a test voltage and a corresponding light emitting area are determined, a corresponding performance parameter may be determined, or a plurality of test voltages and corresponding light emitting areas may be continuously determined, and then the performance parameters corresponding to the test voltages may be determined.
And step 106, determining the performance parameters of the light-emitting diode device based on the test voltage and the light-emitting area.
Because the light-emitting area is the accurate area of the light-emitting diode device which emits light actually under the test voltage, the performance parameters of the light-emitting diode device can be accurately determined based on the test voltage and the light-emitting area.
The performance parameter may be used to account for the performance of the light emitting diode device, and may include at least one of current density, current efficiency, and external quantum efficiency.
The current density is a physical quantity of the current intensity and the flowing direction of a certain point in the circuit, and the current density of the light emitting diode device can be determined by the following formula 1:
J D =i/a (formula 1)
Wherein J is D Is the current density; i is the current flowing through the LED device and can be determined based on the test voltage; a is the light emitting area of the light emitting diode device.
The current efficiency may be a ratio of an amount of a substance actually deposited or dissolved on an electrode at the time of electrolysis to a precipitation or dissolution amount calculated by theory, and the current efficiency of the light emitting diode device may be determined by the following equation 2:
η A ＝L/J D (equation 2)
Wherein eta A Is current efficiency; l is the luminous brightness of the LED device and can be obtained through testing by a testing device.
The external quantum efficiency may be the ratio of the number of electrons collected to the number of all incident photons, when photons are incident on the surface of the photosensitive device, some of the photons excite the photosensitive material to generate electron-hole pairs to form a current. The current density of the light emitting diode device may be determined by the following equation 3:
wherein q is a basic charge; h is a Planck constant; c is the speed of light in vacuum; lambda is the wavelength; g (lambda) is the photopic vision function of the human eye; s (lambda) is the normalized electroluminescent spectrum.
Under any test voltage, the current flowing through the light emitting diode device is determined based on the test voltage, and the obtained light emitting area is substituted into the above formulas 1-3, so that the performance parameters such as the current density, the current efficiency, the external quantum efficiency and the like of the light emitting diode device can be determined, and the current density can be corrected in real time according to the determined light emitting area, so that the light emitting diode device is tested under the preset current density.
In the embodiment of the application, the test voltage can be input to the light emitting diode device, and the light emitting area of the light emitting diode device based on the test voltage can be obtained, so that the performance parameter of the light emitting diode device can be determined based on the test voltage and the light emitting area corresponding to the test voltage. Since the light emitting area is an accurate value obtained based on the provided test voltage, the accuracy of the light emitting area is not affected by the stability of the light emitting diode device, so the accuracy of the performance parameter determined based on the test voltage and the light emitting area is high.
Referring to fig. 6, a functional block diagram of a testing apparatus 600 for a light emitting diode device is provided. It should be noted that, in the testing apparatus 600 for a light emitting diode device according to the embodiment of the present application, the basic principle and the technical effects thereof are the same as those of the corresponding method embodiment, and for brevity, reference may be made to corresponding contents in the method embodiment for the parts not mentioned in the embodiment of the present application. The test apparatus 600 for a light emitting diode device includes an input module 610, a first acquisition module 620 and a first determination module 630.
An input module 610 for inputting a test voltage to the light emitting diode device;
a first obtaining module 620, configured to obtain a light emitting area of the light emitting diode device that emits light based on the test voltage;
a first determining module 630 is configured to determine a performance parameter of the light emitting diode device based on the test voltage and the light emitting area.
Optionally, the first obtaining module 620 is further configured to:
acquiring a luminous image of the light-emitting diode device based on the test voltage;
the light emitting area is determined based on the light emitting image.
Optionally, the first obtaining module 620 is further configured to:
performing binarization processing on the luminous image to obtain a binary image corresponding to the luminous image;
and determining the light-emitting area based on the number of pixels of the white area in the binary image and a preset mapping relation, wherein the preset mapping relation is used for indicating the area of the light-emitting diode device corresponding to each pixel in the light-emitting image.
Optionally, the input module is further configured to input at least one of the test voltages to the light emitting diode devices, respectively;
the first acquisition module is also used for respectively acquiring the light-emitting areas of the light-emitting diode device which emit light under each test voltage;
the first determining module is further configured to determine performance parameters corresponding to the test voltages, respectively, based on at least one of the test voltages and at least one of the light emitting areas.
Optionally, the test apparatus 600 for a light emitting diode device further includes:
and the presintering module is used for presintering the light-emitting diode device.
Optionally, the test apparatus 600 for a light emitting diode device further includes:
the second acquisition module is used for acquiring the light-emitting spectrum of the light-emitting diode device;
and the second determining module is used for determining that the light emitting diode device emits light normally based on the light emitting spectrum.
Optionally, the performance parameter includes at least one of current density, current efficiency, and external quantum efficiency.
It should be noted that, because the content of information interaction and execution process between the above devices/units is based on the same concept as the method embodiment of the present application, specific functions and technical effects thereof may be referred to in the method embodiment section, and will not be described herein again.
It will be apparent to those skilled in the art that, for convenience and brevity of description, only the above-described division of the functional units and modules is illustrated, and in practical application, the above-described functional distribution may be performed by different functional units and modules according to needs, i.e. the internal structure of the apparatus is divided into different functional units or modules to perform all or part of the above-described functions. The functional units and modules in the embodiment may be integrated in one processing unit, or each unit may exist alone physically, or two or more units may be integrated in one unit, where the integrated units may be implemented in a form of hardware or a form of a software functional unit. In addition, specific names of the functional units and modules are only for convenience of distinguishing from each other, and are not used for limiting the protection scope of the present application. The specific working process of the units and modules in the above system may refer to the corresponding process in the foregoing method embodiment, which is not described herein again.
Embodiments of the present application also provide a computing device, the computing device comprising: at least one processor, a memory, and a computer program stored in the memory and executable on the at least one processor, which when executed by the processor performs the steps of any of the various method embodiments described above.
Embodiments of the present application also provide a computer readable storage medium storing a computer program which, when executed by a processor, implements steps that may implement the various method embodiments described above.
Embodiments of the present application provide a computer program product that, when run on a computing device, causes the mobile computing device to perform steps that may be performed by the various method embodiments described above.
The integrated units, if implemented in the form of software functional units and sold or used as stand-alone products, may be stored in a computer readable storage medium. Based on such understanding, the present application implements all or part of the flow of the method of the above embodiments, and may be implemented by a computer program to instruct related hardware, where the computer program may be stored in a computer readable storage medium, where the computer program, when executed by a processor, may implement the steps of each of the method embodiments described above. Wherein the computer program comprises computer program code which may be in source code form, object code form, executable file or some intermediate form etc. The computer readable medium may include at least: any entity or device capable of carrying computer program code to a photographing device/terminal apparatus, recording medium, computer Memory, read-Only Memory (ROM), random access Memory (RAM, random Access Memory), electrical carrier signals, telecommunications signals, and software distribution media. Such as a U-disk, removable hard disk, magnetic or optical disk, etc. In some jurisdictions, computer readable media may not be electrical carrier signals and telecommunications signals in accordance with legislation and patent practice.
In the foregoing embodiments, the descriptions of the embodiments are emphasized, and in part, not described or illustrated in any particular embodiment, reference is made to the related descriptions of other embodiments.
Those of ordinary skill in the art will appreciate that the various illustrative elements and algorithm steps described in connection with the embodiments disclosed herein may be implemented as electronic hardware, or combinations of computer software and electronic hardware. Whether such functionality is implemented as hardware or software depends upon the particular application and design constraints imposed on the solution. Skilled artisans may implement the described functionality in varying ways for each particular application, but such implementation decisions should not be interpreted as causing a departure from the scope of the present application.
In the embodiments provided in the present application, it should be understood that the disclosed apparatus/network device and method may be implemented in other manners. For example, the apparatus/network device embodiments described above are merely illustrative, e.g., the division of the modules or units is merely a logical functional division, and there may be additional divisions in actual implementation, e.g., multiple units or components may be combined or integrated into another system, or some features may be omitted, or not performed. Alternatively, the coupling or direct coupling or communication connection shown or discussed may be an indirect coupling or communication connection via interfaces, devices or units, which may be in electrical, mechanical or other forms.
It should be understood that the terms "comprises" and/or "comprising," when used in this specification and the appended claims, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
It should also be understood that the term "and/or" as used in this specification and the appended claims refers to any and all possible combinations of one or more of the associated listed items, and includes such combinations.
As used in this specification and the appended claims, the term "if" may be interpreted as "when..once" or "in response to a determination" or "in response to detection" depending on the context. Similarly, the phrase "if a determination" or "if a [ described condition or event ] is detected" may be interpreted in the context of meaning "upon determination" or "in response to determination" or "upon detection of a [ described condition or event ]" or "in response to detection of a [ described condition or event ]".
In addition, in the description of the present application and the appended claims, the terms "first," "second," "third," and the like are used merely to distinguish between descriptions and are not to be construed as indicating or implying relative importance.
Reference in the specification to "one embodiment" or "some embodiments" or the like means that a particular feature, structure, or characteristic described in connection with the embodiment is included in one or more embodiments of the application. Thus, appearances of the phrases "in one embodiment," "in some embodiments," "in other embodiments," and the like in the specification are not necessarily all referring to the same embodiment, but mean "one or more but not all embodiments" unless expressly specified otherwise. The terms "comprising," "including," "having," and variations thereof mean "including but not limited to," unless expressly specified otherwise.
The above embodiments are only for illustrating the technical solution of the present application, and are not limiting; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present application, and are intended to be included in the scope of the present application.
Claims (10)
1. A method of testing a light emitting diode device, comprising:
inputting a test voltage to the light emitting diode device;
acquiring a light emitting area of the light emitting diode device based on the test voltage;
and determining a performance parameter of the light emitting diode device based on the test voltage and the light emitting area.
2. The method of claim 1, wherein the obtaining a light emitting area of the light emitting diode device that emits light based on the test voltage comprises:
acquiring a luminous image of the light-emitting diode device based on the test voltage;
the light emitting area is determined based on the light emitting image.
3. The method of claim 2, wherein the determining the light emitting area based on the light emitting image comprises:
performing binarization processing on the luminous image to obtain a binary image corresponding to the luminous image;
and determining the light-emitting area based on the number of pixels of the white area in the binary image and a preset mapping relation, wherein the preset mapping relation is used for indicating the area of the light-emitting diode device corresponding to each pixel in the light-emitting image.
4. The method of claim 1, wherein inputting a test voltage to the light emitting diode device comprises:
inputting at least one test voltage to the light emitting diode devices respectively;
the obtaining the light emitting area of the light emitting diode device based on the test voltage includes:
respectively acquiring the light emitting areas of the light emitting diode devices which emit light under each test voltage;
the determining, based on the test voltage and the light emitting area, a performance parameter of the light emitting diode device includes:
based on at least one of the test voltages and at least one of the light emitting areas, performance parameters corresponding to each of the test voltages are determined, respectively.
5. The method of claim 1, further comprising, prior to said inputting the test voltage to the light emitting diode device:
and presintering the light emitting diode device.
6. The method of claim 1, further comprising, prior to said inputting the test voltage to the light emitting diode device:
acquiring a light emitting spectrum of the light emitting diode device;
and determining that the light emitting diode device emits light normally based on the light emitting spectrum.
7. The method of any of claims 1-6, wherein the performance parameter comprises at least one of current density, current efficiency, and external quantum efficiency.
8. A test apparatus for a light emitting diode device, comprising:
the input module is used for inputting a test voltage to the light-emitting diode device;
the first acquisition module is used for acquiring the light-emitting area of the light-emitting diode device which emits light based on the test voltage;
and the first determining module is used for determining the performance parameters of the light-emitting diode device based on the test voltage and the light-emitting area.
9. A computing device comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor implements the method of any of claims 1 to 7 when the computer program is executed.
10. A computer readable storage medium storing a computer program, characterized in that the computer program when executed by a processor implements the method according to any one of claims 1 to 7.
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1825128A (en) * | 2005-02-22 | 2006-08-30 | 久元电子股份有限公司 | LED tester |
| JP2007101726A (en) * | 2005-09-30 | 2007-04-19 | Fujifilm Corp | Exposure device |
| CN101285869A (en) * | 2008-06-03 | 2008-10-15 | 张九六 | LED parameter test method |
| CN101852674A (en) * | 2009-04-03 | 2010-10-06 | 研晶光电股份有限公司 | Detecting equipment and method of luminous module |
| CN102486520A (en) * | 2010-12-04 | 2012-06-06 | 展晶科技(深圳)有限公司 | Light emitting diode (LED) light source test device |
| JP2012149946A (en) * | 2011-01-18 | 2012-08-09 | Sharp Corp | Inspection device, inspection method and program |
| CN104181450A (en) * | 2014-09-02 | 2014-12-03 | 中国科学院半导体研究所 | System and method for testing light-emitting diode response characteristics |
| CN110398344A (en) * | 2019-08-23 | 2019-11-01 | Tcl王牌电器(惠州)有限公司 | A kind of detection method, appliance arrangement and storage medium showing equipment backlight luminous board |
| CN111157225A (en) * | 2019-08-21 | 2020-05-15 | 南京理工大学 | Labview-based EMCCD chip full-performance parameter testing method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8687181B2 (en) * | 2012-02-03 | 2014-04-01 | Epistar Corporation | Method and apparatus for testing light-emitting device |
-
2020
- 2020-06-17 CN CN202010554619.2A patent/CN113884849B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1825128A (en) * | 2005-02-22 | 2006-08-30 | 久元电子股份有限公司 | LED tester |
| JP2007101726A (en) * | 2005-09-30 | 2007-04-19 | Fujifilm Corp | Exposure device |
| CN101285869A (en) * | 2008-06-03 | 2008-10-15 | 张九六 | LED parameter test method |
| CN101852674A (en) * | 2009-04-03 | 2010-10-06 | 研晶光电股份有限公司 | Detecting equipment and method of luminous module |
| CN102486520A (en) * | 2010-12-04 | 2012-06-06 | 展晶科技(深圳)有限公司 | Light emitting diode (LED) light source test device |
| JP2012149946A (en) * | 2011-01-18 | 2012-08-09 | Sharp Corp | Inspection device, inspection method and program |
| CN104181450A (en) * | 2014-09-02 | 2014-12-03 | 中国科学院半导体研究所 | System and method for testing light-emitting diode response characteristics |
| CN111157225A (en) * | 2019-08-21 | 2020-05-15 | 南京理工大学 | Labview-based EMCCD chip full-performance parameter testing method |
| CN110398344A (en) * | 2019-08-23 | 2019-11-01 | Tcl王牌电器(惠州)有限公司 | A kind of detection method, appliance arrangement and storage medium showing equipment backlight luminous board |
Non-Patent Citations (2)
| Title |
|---|
| LED发光二极管特性测试;王悦;李泽深;刘维;;物理实验(第02期);全文 * |
| 半导体发光二极管LED的测试方法;沈光地;;中国科技财富(第07期);全文 * |
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