CN113880574A - PZT-5 type ceramic wafer stacking and sintering method - Google Patents

PZT-5 type ceramic wafer stacking and sintering method Download PDF

Info

Publication number
CN113880574A
CN113880574A CN202111247489.9A CN202111247489A CN113880574A CN 113880574 A CN113880574 A CN 113880574A CN 202111247489 A CN202111247489 A CN 202111247489A CN 113880574 A CN113880574 A CN 113880574A
Authority
CN
China
Prior art keywords
ceramic
sintering
powder
pzt
piezoelectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202111247489.9A
Other languages
Chinese (zh)
Inventor
余健
唐燕民
李文好
张铮烨
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Haiying Enterprise Group Co Ltd
Original Assignee
Haiying Enterprise Group Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Haiying Enterprise Group Co Ltd filed Critical Haiying Enterprise Group Co Ltd
Priority to CN202111247489.9A priority Critical patent/CN113880574A/en
Publication of CN113880574A publication Critical patent/CN113880574A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/48Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates
    • C04B35/49Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates containing also titanium oxides or titanates
    • C04B35/491Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates containing also titanium oxides or titanates based on lead zirconates and lead titanates, e.g. PZT
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/64Burning or sintering processes
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/51Metallising, e.g. infiltration of sintered ceramic preforms with molten metal
    • C04B41/5116Ag or Au
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81Coating or impregnation
    • C04B41/85Coating or impregnation with inorganic materials
    • C04B41/88Metals

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Composite Materials (AREA)
  • Compositions Of Oxide Ceramics (AREA)

Abstract

The invention relates to a PZT-5 type ceramic wafer-based stacking and sintering method, which comprises the following steps: preparing materials; mixing materials; pre-burning; refining powder; plasticizing; molding and plastic removal; preparing a sintering pad, and mixing and grinding the particles of the ceramic green body and zirconium dioxide powder; sintering the ceramic; upper electrode and polarization treatment; and (4) measuring the piezoelectric performance. The invention introduces zirconium dioxide powder on the basis of PZT-5 type piezoelectric ceramic process. The novel sintering padding is prepared by ball milling and mixing the planetary ball mill and PZT-5 type piezoelectric ceramic clinker powder, and is spread on the surface of a green wafer to help to reduce the volatilization of PbO in the wafer, improve the electrical property of the ceramic and improve the phenomenon of wafer adhesion.

Description

PZT-5 type ceramic wafer stacking and sintering method
Technical Field
The invention relates to a ceramic substrate process technology, in particular to a stack sintering method based on PZT-5 type ceramic wafers,
background
The piezoelectric ceramic material is an extremely important electronic information functional device material, has been developed rapidly in recent years and has become one of indispensable modern industrial materials in the modern time due to the increasingly wide application. The piezoelectric effect is that when external stress is applied to the piezoelectric ceramic material, electric charges (positive piezoelectric property) are generated on the surface of the internal crystal of the piezoelectric ceramic material; if an external electric field is applied to the material, the internal crystal will deform (reverse piezoelectricity) under the action of the electric field. PbO in the piezoelectric ceramic raw material has higher saturated vapor pressure and can volatilize in a gas form at higher sintering temperature. If the Pb loss is too large, the performance of the piezoelectric ceramic material is drastically reduced.
At present, PZT series piezoelectric ceramics as ceramics widely applied to industry are sintered by embedding powder by clinker powder of the same kind of ceramics, although volatilization of PbO in a ceramic wafer can be reduced, the sintered ceramic wafer can generate adhesion phenomenon, and the subsequent processing difficulty is increased. How to reduce the volatilization of PbO during the sintering process and reduce the adhesion phenomenon of the sintered crystal plate has been the research focus of researchers in recent years.
Disclosure of Invention
Therefore, the technical problem to be solved by the invention is to overcome the problems that the sintered ceramic wafer in the prior art can generate adhesion, the subsequent processing difficulty is increased and PbO in the ceramic wafer volatilizes, thereby providing a PZT-5 type ceramic wafer-based stacking sintering method which is slightly influenced by sea conditions and can ensure the overall stability of the wind turbine generator to the greatest extent,
in order to solve the technical problem, the invention discloses a PZT-5 type ceramic wafer-based stacking and sintering method, which comprises the following steps:
step S1: preparing materials: calculating the proportion of each component according to the chemical formula of the ceramic formula;
step S2: mixing materials: ball-milling and mixing materials by adopting a traditional wet method, and adding ceramic powder and deionized water into a stirring barrel according to the mass ratio of 100: 47;
step S3: pre-burning: the process of forming piezoelectric ceramics is a typical chemical reaction process, and at a temperature lower than the melting point, Pb atoms can be diffused into crystals of other materials to form PbZrTiO3
Step S4: refining powder: weighing the ceramic powder after the pre-sintering treatment, pouring the ceramic powder into deionized water, and uniformly stirring to prepare mixed ceramic slurry;
step S5: plasticizing: taking the thinned ceramic slurry out of the charging barrel; ball-milling and stirring the ceramic slurry and PVA solution which accounts for about 6 percent of the weight of the material, uniformly mixing, then introducing the ceramic slurry into a spray granulator, and sieving the prepared powder by using a 120-mesh screen;
step S6: molding and plastic removal: pre-pressing and molding the powder, and plastic discharging: putting the ceramic green body into a muffle furnace, setting the maximum temperature to be 750 ℃, and further removing a forming agent in the ceramic green body;
step S7: preparing a sintering padding: placing PZT-5 type ceramic green body powder obtained by spray granulation in a crucible and covering the crucible with a cover plate, calcining at 1300 ℃ for 60min, taking out after cooling, putting the mixture into a high-efficiency crusher to be crushed into particles, and mixing and grinding the particles with zirconium dioxide powder;
step S8: and (3) sintering of ceramics: uniformly spreading a sintering padding on the ceramic wafer green body by using a 40-mesh screen, placing the next ceramic green body after uniformly covering, and circulating the operation; setting the sintering temperature to 1310-;
step S9: upper electrode and polarization process, upper electrode: carrying out silver impregnation treatment on the surface of the piezoelectric ceramic to form a metal film, and carrying out polarization treatment: applying a strong direct current electric field to the piezoelectric ceramic;
step S10: and (3) piezoelectric performance measurement: e.g. d33Dielectric loss tan delta and electromechanical coupling coefficient Kp
In an embodiment of the present invention, in the material mixing step, slurry needs to be stirred in a stirring barrel for 7min in advance, after the low-speed ball milling is performed for 45s, high-speed ball milling is started without abnormal conditions, the ball milling time is set to 3h, and after the ball milling is finished, the slurry is dried for standby.
In one embodiment of the invention, the powder material refining step is to fill the mixed ceramic slurry into a cylinder of a high-efficiency ball mill for secondary refining treatment for 24 hours.
In one embodiment of the invention, the molding and plastic-discharging steps set the wafer to a pre-press molding size of 20x1 mm.
In an embodiment of the invention, in the step of preparing the sintering pad, the calcined particles of the ceramic green body and the zirconium dioxide powder are ball-milled in a planetary ball mill for 2 hours according to a mass ratio of 1:1, the frequency is set to be 200Hz, and the ball-milling medium is 10mm zirconium oxide balls.
In an embodiment of the present invention, after the piezoelectric ceramic is subjected to the polarization treatment step, ferroelectric domains inside the material of the piezoelectric ceramic are turned, all the ferroelectric domains in the piezoelectric ceramic are arranged in the direction of an electric field, and only the piezoelectric ceramic subjected to the polarization treatment has a piezoelectric effect.
Compared with the prior art, the technical scheme of the invention has the following advantages: the invention relates to a PZT-5 type ceramic wafer-based stacking and sintering method, which introduces zirconium dioxide powder on the basis of a PZT-5 type piezoelectric ceramic process. The novel sintering padding is prepared by ball milling and mixing the planetary ball mill and PZT-5 type piezoelectric ceramic clinker powder, and is spread on the surface of a green wafer to help to reduce the volatilization of PbO in the wafer, improve the electrical property of the ceramic and improve the phenomenon of wafer adhesion.
Drawings
In order that the manner in which the present invention is made will be more readily understood, a more particular description of the invention, briefly summarized above, may be had by reference to the embodiments thereof which are illustrated in the appended drawings,
FIG. 1 is a flow chart of a sintering method based on PZT-5 type ceramic wafer stacking.
Detailed Description
As shown in fig. 1, the present embodiment provides a PZT-5 based ceramic wafer stack sintering method, comprising the steps of:
step S1: preparing materials: calculating the proportion of each component according to the chemical formula of the ceramic formula;
step S2: mixing materials: ball-milling and mixing materials by adopting a traditional wet method, and adding ceramic powder and deionized water into a stirring barrel according to the mass ratio of 100: 47;
step S3: pre-burning: generatingThe process of piezoelectric ceramics is a typical chemical reaction process, and Pb atoms can be diffused into crystals of other materials to generate PbZrTiO at a temperature lower than the melting point3
Step S4: refining powder: weighing the ceramic powder after the pre-sintering treatment, pouring the ceramic powder into deionized water, and uniformly stirring to prepare mixed ceramic slurry;
step S5: plasticizing: taking the thinned ceramic slurry out of the charging barrel; ball-milling and stirring the ceramic slurry and PVA solution which accounts for about 6 percent of the weight of the material, uniformly mixing, then introducing the ceramic slurry into a spray granulator, and sieving the prepared powder by using a 120-mesh screen;
step S6: molding and plastic removal: pre-pressing and molding the powder, and plastic discharging: placing the ceramic green body into a muffle furnace, setting the maximum temperature to be 750 ℃, further removing a forming agent in the ceramic green body, ensuring the sintering quality and improving the sintering density;
step S7: preparing a sintering padding: placing PZT-5 type ceramic green body powder obtained by spray granulation in a crucible and covering the crucible with a cover plate, calcining at 1300 ℃ for 60min, taking out after cooling, putting the mixture into a high-efficiency crusher to be crushed into particles, and mixing and grinding the particles with zirconium dioxide powder;
step S8: and (3) sintering of ceramics: uniformly spreading a sintering padding on the ceramic wafer green body by using a 40-mesh screen, placing the next ceramic green body after uniformly covering, and circulating the operation; setting the sintering temperature as 1340 ℃, preserving the heat for 2 hours, and cooling along with the furnace;
step S9: upper electrode and polarization process, upper electrode: carrying out silver impregnation treatment on the surface of the piezoelectric ceramic to form a metal film, and carrying out polarization treatment: applying a strong direct current electric field to the piezoelectric ceramic;
step S10: and (3) piezoelectric performance measurement: e.g. d33Dielectric loss tan delta and electromechanical coupling coefficient Kp
Wherein the experimental measurement results of the 20x1mm round wafer are as follows:
Figure BDA0003321335690000031
the performance parameters of the underwater acoustic material P-5 are as follows:
Figure BDA0003321335690000032
and (4) conclusion:
because the ceramic clinker powder and the zirconium dioxide powder are used as sintering padding, the phenomena of PbO volatilization and ceramic wafer adhesion of a ceramic green body in the sintering process are reduced during stacking and sintering. The working time of grinding the end face in the subsequent processing is reduced, and the yield is improved. The prepared PZT-5 ceramic material is d at normal temperature33A value of 580pC/N, k at room temperaturep67 percent, has higher performance parameters, and reaches the application standard of the underwater acoustic material.
And in the material mixing step, slurry is required to be stirred in a stirring barrel for 7min in advance, high-speed ball milling is started without abnormal operation after low-speed ball milling is carried out for 45s, the ball milling time is set to be 3h, and the slurry is dried for later use after the ball milling is finished.
In the step of powder material refinement, the mixed ceramic slurry is filled into a charging barrel of a high-efficiency ball mill for secondary refinement treatment for 24 hours.
In the molding and plastic discharging steps, the wafer is pre-pressed to form the wafer with the size of 20x1 mm.
Further, in the step of preparing the sintering padding, calcined particles of the ceramic green body and zirconium dioxide powder are subjected to ball milling for 2 hours in a planetary ball mill according to the mass ratio of 1:1, the frequency is set to be 200Hz, and the ball milling medium is 10mm zirconium oxide balls.
The method greatly reduces the phenomenon of adhesion after ceramic sintering by spreading the special sintering padding, reduces the working time of grinding the end face of the subsequent processing and improves the yield. And simultaneously, the phenomenon that the zirconium dioxide powder absorbs Pb atoms in a green body during sintering is reduced to the maximum extent. The prepared PZT-5 ceramic material has good performance at normal temperature.
After the piezoelectric ceramic is subjected to the polarization treatment step, ferroelectric domains in the piezoelectric ceramic are turned, all the ferroelectric domains in the piezoelectric ceramic are arranged in the direction of an electric field, and only the piezoelectric ceramic subjected to the polarization treatment has the piezoelectric effect.
It is obvious that the above-mentioned embodiments are given by way of example only, and are not limitative of the embodiments, and that, on the basis of the above description, many other variants and modifications are possible to those skilled in the art, which variants and modifications do not require exhaustive enumeration of all embodiments and are therefore obvious and are within the scope of the invention.

Claims (6)

1. A PZT-5 type ceramic wafer based stacking and sintering method is characterized by comprising the following steps:
step S1: preparing materials: calculating the proportion of each component according to the chemical formula of the ceramic formula;
step S2: mixing materials: ball-milling and mixing materials by adopting a traditional wet method, and adding ceramic powder and deionized water into a stirring barrel according to the mass ratio of 100: 47;
step S3: pre-burning: the process of forming piezoelectric ceramics is a typical chemical reaction process, and at a temperature lower than the melting point, Pb atoms can be diffused into crystals of other materials to form PbZrTiO3
Step S4: refining powder: weighing the ceramic powder after the pre-sintering treatment, pouring the ceramic powder into deionized water, and uniformly stirring to prepare mixed ceramic slurry;
step S5: plasticizing: taking the thinned ceramic slurry out of the charging barrel; ball-milling and stirring the ceramic slurry and PVA solution which accounts for about 6 percent of the weight of the material, uniformly mixing, then introducing the ceramic slurry into a spray granulator, and sieving the prepared powder by using a 120-mesh screen;
step S6: molding and plastic removal: pre-pressing and molding the powder, and plastic discharging: placing the ceramic green body into a muffle furnace, setting the maximum temperature to be 750 ℃, further removing a forming agent in the ceramic green body, ensuring the sintering quality and improving the sintering density;
step S7: preparing a sintering padding: placing PZT-5 type ceramic green body powder obtained by spray granulation in a crucible and covering the crucible with a cover plate, calcining at 1300 ℃ for 60min, taking out after cooling, putting the mixture into a high-efficiency crusher to be crushed into particles, and mixing and grinding the particles with zirconium dioxide powder;
step S8: and (3) sintering of ceramics: uniformly spreading a sintering padding on the ceramic wafer green body by using a 40-mesh screen, placing the next ceramic green body after uniformly covering, and circulating the operation; setting the sintering temperature to 1310-;
step S9: upper electrode and polarization process, upper electrode: carrying out silver impregnation treatment on the surface of the piezoelectric ceramic to form a metal film, and carrying out polarization treatment: applying a strong direct current electric field to the piezoelectric ceramic;
step S10: and (3) piezoelectric performance measurement: e.g. d33Dielectric loss tan delta and electromechanical coupling coefficient Kp
2. The sintering method for stacking ceramic wafers based on PZT-5 type according to claim 1, wherein: and in the material mixing step, slurry is required to be stirred in a stirring barrel for 7min in advance, high-speed ball milling is started without abnormal operation after low-speed ball milling is carried out for 45s, the ball milling time is set to be 3h, and the slurry is dried for later use after the ball milling is finished.
3. The sintering method for stacking ceramic wafers based on PZT-5 type according to claim 1, wherein: in the step of powder material refinement, the mixed ceramic slurry is filled into a charging barrel of a high-efficiency ball mill for secondary refinement treatment for 24 hours.
4. The sintering method for stacking ceramic wafers based on PZT-5 type according to claim 1, wherein: in the molding and plastic discharging steps, the wafer is pre-pressed to form the wafer with the size of 20x1 mm.
5. The sintering method for stacking ceramic wafers based on PZT-5 type according to claim 1, wherein: in the step of preparing the sintering padding, calcined particles of the ceramic green body and zirconium dioxide powder are subjected to ball milling for 2 hours in a planetary ball mill according to the mass ratio of 1:1, the frequency is set to be 200Hz, and the ball milling medium is 10mm zirconium oxide balls.
6. The sintering method for stacking ceramic wafers based on PZT-5 type according to claim 1, wherein: after the piezoelectric ceramic is subjected to the polarization treatment step, ferroelectric domains in the piezoelectric ceramic are turned, all the ferroelectric domains in the piezoelectric ceramic are arranged in the direction of an electric field, and only the piezoelectric ceramic subjected to the polarization treatment has the piezoelectric effect.
CN202111247489.9A 2021-10-26 2021-10-26 PZT-5 type ceramic wafer stacking and sintering method Pending CN113880574A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202111247489.9A CN113880574A (en) 2021-10-26 2021-10-26 PZT-5 type ceramic wafer stacking and sintering method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202111247489.9A CN113880574A (en) 2021-10-26 2021-10-26 PZT-5 type ceramic wafer stacking and sintering method

Publications (1)

Publication Number Publication Date
CN113880574A true CN113880574A (en) 2022-01-04

Family

ID=79014487

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202111247489.9A Pending CN113880574A (en) 2021-10-26 2021-10-26 PZT-5 type ceramic wafer stacking and sintering method

Country Status (1)

Country Link
CN (1) CN113880574A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117423549A (en) * 2023-10-18 2024-01-19 广东微容电子科技有限公司 MLCC and MLCC manufacturing method for improving raw inverted adhesive sheet

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104387097A (en) * 2014-11-03 2015-03-04 贵州振华红云电子有限公司 Isolation material capable of avoiding adhesion of green bodies of piezoelectric ceramic plates
US20150137667A1 (en) * 2013-11-15 2015-05-21 AAC Technologies Pte. Ltd. Ceramic material, sinter, ceramic device, piezoelectricity ceramic bimorph and gluing method thereof
CN106045501A (en) * 2016-06-01 2016-10-26 北京中科奥倍超声波技术研究院 Lead-free piezoelectric ceramic and preparation method thereof
CN106239701A (en) * 2016-07-26 2016-12-21 江苏省陶瓷研究所有限公司 A kind of thermal sensitive ceramics substrate forming method
CN106518069A (en) * 2016-09-29 2017-03-22 广东工业大学 Lanthanum-zirconium-doped lead titanate ferroelectric thick film ceramic material and preparation method thereof
CN110862262A (en) * 2019-12-05 2020-03-06 湖南嘉业达电子有限公司 High-performance piezoelectric ceramic applied to sound element and manufacturing method thereof
CN112341196A (en) * 2020-10-27 2021-02-09 海鹰企业集团有限责任公司 Novel piezoelectric ceramic powder refining method and piezoelectric ceramic

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150137667A1 (en) * 2013-11-15 2015-05-21 AAC Technologies Pte. Ltd. Ceramic material, sinter, ceramic device, piezoelectricity ceramic bimorph and gluing method thereof
CN104387097A (en) * 2014-11-03 2015-03-04 贵州振华红云电子有限公司 Isolation material capable of avoiding adhesion of green bodies of piezoelectric ceramic plates
CN106045501A (en) * 2016-06-01 2016-10-26 北京中科奥倍超声波技术研究院 Lead-free piezoelectric ceramic and preparation method thereof
CN106239701A (en) * 2016-07-26 2016-12-21 江苏省陶瓷研究所有限公司 A kind of thermal sensitive ceramics substrate forming method
CN106518069A (en) * 2016-09-29 2017-03-22 广东工业大学 Lanthanum-zirconium-doped lead titanate ferroelectric thick film ceramic material and preparation method thereof
CN110862262A (en) * 2019-12-05 2020-03-06 湖南嘉业达电子有限公司 High-performance piezoelectric ceramic applied to sound element and manufacturing method thereof
CN112341196A (en) * 2020-10-27 2021-02-09 海鹰企业集团有限责任公司 Novel piezoelectric ceramic powder refining method and piezoelectric ceramic

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117423549A (en) * 2023-10-18 2024-01-19 广东微容电子科技有限公司 MLCC and MLCC manufacturing method for improving raw inverted adhesive sheet
CN117423549B (en) * 2023-10-18 2024-05-14 广东微容电子科技有限公司 MLCC and MLCC manufacturing method for improving raw inverted adhesive sheet

Similar Documents

Publication Publication Date Title
CN110540423A (en) Sodium bismuth titanate-based ceramic with high energy storage density and power density, and preparation method and application thereof
CN111978082B (en) Strontium magnesium niobate doped modified sodium bismuth titanate based energy storage ceramic material and preparation method thereof
CN104291817A (en) High-Curie-temperature PZT piezoceramic material and preparation method thereof
CN112341196A (en) Novel piezoelectric ceramic powder refining method and piezoelectric ceramic
CN113773078A (en) High-power piezoelectric ceramic material and preparation method thereof
CN114409401A (en) Potassium-sodium niobate piezoelectric ceramic, preparation method thereof and electronic equipment
CN113880574A (en) PZT-5 type ceramic wafer stacking and sintering method
CN113321507B (en) Doped modified lead-based piezoelectric ceramic with excellent and stable piezoelectric performance
CN104725041A (en) La-doped lead zirconate stannate titanate anti-ferroelectric ceramics with high energy storage efficiency and preparation method thereof
CN113698204A (en) Potassium-sodium niobate-based lead-free piezoelectric textured ceramic with high piezoelectric response and high Curie temperature and preparation method thereof
CN106986629B (en) Preparation method of bismuth titanate-based bismuth laminated structure ferroelectric ceramic target material
CN112759390A (en) Has high kpPSN-PZT piezoelectric ceramic and preparation method thereof
CN113461422B (en) High-voltage anti-fatigue potassium-sodium niobate-based lead-free piezoelectric ceramic and preparation method thereof
CN106365632B (en) Lead-free piezoceramic material of ternary system and preparation method thereof
CN111704461B (en) Formula and preparation method of high Curie point low temperature co-fired piezoelectric ceramic
CN114591082A (en) PZT-PNN-PSN-PMN piezoelectric ceramic and preparation method thereof
CN114249592A (en) Preparation method of hard piezoelectric ceramic material
CN115536392A (en) Piezoelectric ceramic piece for high-temperature laminated electric driver and preparation method thereof
CN111217596B (en) Lead-free piezoelectric ceramic material with high Curie temperature and large electrostrictive strain and preparation method thereof
CN114478006A (en) KNNS-BNZ + CuO piezoceramic material and preparation method and application thereof
CN107488032A (en) A kind of additive Mn BNT BA Lead-free ferroelectric ceramics materials and preparation method thereof
CN106116573A (en) A kind of pulse power capacitor device antiferroelectric ceramics powder body and preparation method thereof
CN106116572B (en) Ceramic material with high piezoelectric coefficient and preparation method thereof
CN110563460A (en) Large-size preparation method of sensitive element material for pyroelectric sensor
KR102627416B1 (en) Method of fabricating ternary piezoeletric ceramics with improved piezoeletric properties

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication

Application publication date: 20220104

RJ01 Rejection of invention patent application after publication