CN113871445A

CN113871445A - Display panel, preparation method thereof and display device

Info

Publication number: CN113871445A
Application number: CN202111136512.7A
Authority: CN
Inventors: 谢锋
Original assignee: Xiamen Tianma Microelectronics Co Ltd
Current assignee: Xiamen Tianma Microelectronics Co Ltd
Priority date: 2021-09-27
Filing date: 2021-09-27
Publication date: 2021-12-31
Anticipated expiration: 2041-09-27
Also published as: CN113871445B

Abstract

The invention discloses a display panel, a preparation method thereof and a display device, wherein the display panel comprises a display area; the display panel further comprises a substrate and a pixel circuit, wherein the pixel circuit comprises a first film layer; at least part of the display area also comprises a conductive bridging part which is positioned on one side of the first film layer far away from the substrate, and the conductive bridging part comprises an oxide semiconductor material; along the first direction, the conductive bridging part is partially overlapped with the first film layer, and the conductive bridging part is electrically connected with part of the first film layer; the first direction is perpendicular to the plane of the substrate. The conductive bridging layer comprising the oxide semiconductor material is used as the connecting bridging layer of the first film layer and other film layers in the pixel circuit, so that the first film layer can be prevented from being electrically connected with other film layers through a deeper via hole, the preparation process of the display panel is simple, and the connection stability between the first film layer and other film layers is high; meanwhile, the transmittance of the conductive bridging layer made of the oxide semiconductor material is good, so that the light transmission effect of the display panel is improved.

Description

Display panel, preparation method thereof and display device

Technical Field

The embodiment of the invention relates to the technical field of display, in particular to a display panel, a preparation method of the display panel and a display device.

Background

With the development of display technology, the application of display devices is becoming more and more extensive, and the display devices become more and more indispensable electronic products used in daily work and life of people.

In the existing display panel technology, as the functions of the display panel are more and more comprehensive, the structure of the display panel is more and more complex, and different film layers are often electrically connected through via holes. The problem that the connection through hole is too deep exists in the existing display panel, the deep hole process is complex, and the connection stability is poor when the connection is carried out through the deep hole.

Disclosure of Invention

The invention provides a display panel, a preparation method thereof and a display device, and aims to solve the technical problems of complex process and poor connection stability caused by deep connection through holes in the prior art.

In a first aspect, an embodiment of the present invention provides a display panel, including a display area;

the display panel further includes:

a substrate;

the pixel circuit is positioned in the display area and on one side of the substrate and comprises a first film layer;

at least part of the display area further comprises a conductive bridging portion located on the side of the first film layer away from the substrate, wherein the conductive bridging portion comprises an oxide semiconductor material;

in a first direction, the conductive bridge portion partially overlaps the first film layer and is electrically connected with a part of the first film layer; the first direction is perpendicular to the plane of the substrate.

In a second aspect, an embodiment of the present invention further provides a method for manufacturing a display panel, which is used for manufacturing the display panel according to the first aspect.

In a third aspect, an embodiment of the present invention further provides a display device, including the display panel in the first direction.

The display panel provided by the embodiment of the invention comprises a display area and a pixel circuit positioned in the display area, wherein the pixel circuit comprises a first film layer, and a conductive bridging layer comprising an oxide semiconductor material is used as a connecting bridging layer of the first film layer and other film layers in the pixel circuit, so that the first film layer can be prevented from being electrically connected with other film layers through a deeper via hole, the preparation process of the display panel is simple, and meanwhile, the high connection stability between the first film layer and other film layers is ensured; simultaneously, because electrically conductive bridging portion includes oxide semiconductor material, its transmissivity is higher, consequently sets up along first direction, and electrically conductive bridging portion and first rete partially overlap can adopt electrically conductive bridging portion replacement part first rete in partial display area, are favorable to promoting display panel's luminousness, are applicable to display area or display panel that have higher requirement to the luminousness.

Drawings

FIG. 1 is a schematic diagram of a display panel according to the prior art;

fig. 2 is a schematic structural diagram of a display panel according to an embodiment of the present invention;

FIG. 3 is a schematic structural diagram of another display panel according to an embodiment of the present invention;

fig. 4 is a schematic diagram of a layout structure of a pixel circuit in the related art;

fig. 5 is a schematic diagram of a layout structure of a pixel circuit according to an embodiment of the present invention;

fig. 6 is a schematic diagram of a layout structure of another pixel circuit according to an embodiment of the present invention;

fig. 7 is a schematic diagram of a layout structure of another pixel circuit according to an embodiment of the present invention;

fig. 8 is a schematic flow chart of a method for manufacturing a display panel according to an embodiment of the present invention;

FIG. 9 is a schematic flow chart illustrating a method for fabricating a display panel according to another embodiment of the present invention;

fig. 10 is a schematic structural diagram of a display device according to an embodiment of the present invention.

Detailed Description

The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.

Fig. 1 is a schematic structural diagram of a display panel according to an embodiment of the present invention, and as shown in fig. 1, the display panel according to the embodiment of the present invention includes a pixel circuit 01, and the pixel circuit 01 includes a thin film transistor 011 in fig. 1. As shown in fig. 1, the pixel circuit 01 includes a first film layer 01-1, and the first film layer 01-1 is taken as an active layer in fig. 1 for illustration. In the thin film transistor, the active layer needs to be electrically connected with the source and the drain to form a signal transmission channel, and the active layer needs to be electrically connected with the source S and the drain D through the via hole K because the active layer is arranged separately from the source and the drain. The active layer is electrically connected with the source electrode and the drain electrode through deep holes due to the fact that the number of intermediate film layers between the active layer and the source electrode and between the active layer and the drain electrode is large. But the deep hole process is complicated and tends to make the connection unstable.

Based on the above technical problem, in the embodiment of the present invention, the display panel includes a display area, and the display panel further includes a substrate; the pixel circuit is positioned in the display area and on one side of the substrate and comprises a first film layer; at least part of the display area also comprises a conductive bridging part which is positioned on one side of the first film layer far away from the substrate, and the conductive bridging part comprises an oxide semiconductor material; along the first direction, the conductive bridging part is partially overlapped with the first film layer, and the conductive bridging part is electrically connected with part of the first film layer; the first direction is perpendicular to the plane of the substrate. By adopting the technical scheme, the conductive bridging layer comprising the oxide semiconductor material is used as the connecting bridging layer of the first film layer and other film layers in the pixel circuit, so that the first film layer can be prevented from being electrically connected with other film layers through a deeper via hole, the preparation process of the display panel is simple, and the high connection stability between the first film layer and other film layers is ensured; simultaneously, because electrically conductive bridging portion includes oxide semiconductor material, its transmissivity is higher, consequently sets up along first direction, and electrically conductive bridging portion and first rete partially overlap can adopt electrically conductive bridging portion replacement part first rete in partial display area, are favorable to promoting display panel's luminousness, are applicable to display area or display panel that have higher requirement to the luminousness.

The above is the core idea of the present invention, and the technical solution in the embodiment of the present invention will be clearly and completely described below with reference to the drawings in the embodiment of the present invention. All other embodiments obtained by a person of ordinary skill in the art based on the embodiments of the present invention without any creative work belong to the protection scope of the present invention.

Fig. 2 is a schematic structural diagram of a display panel according to an embodiment of the present invention, and as shown in fig. 2, a display panel 10 according to an embodiment of the present invention includes a display area AA, and the display panel 10 further includes a substrate 11; a pixel circuit 12 located in the display area AA and on one side of the substrate 11, the pixel circuit 12 including a first film layer 121; at least part of the display area AA further comprises a conductive bridge 13 located on a side of the first film layer 121 remote from the substrate 11, the conductive bridge 13 comprising an oxide semiconductor material; in a first direction (X direction as shown in the figure), the conductive bridge 13 partially overlaps the first film layer 121, and the conductive bridge 13 is electrically connected with a part of the first film layer 121; the first direction is perpendicular to the plane of the substrate 11.

Illustratively, as shown in fig. 2, the display panel 10 includes a display area AA, the display area AA includes sub-pixels (not shown) arranged in an array, the sub-pixels include a pixel circuit 12 and a light emitting element (not shown), and the pixel circuit 12 is configured to provide a light emitting signal, such as a data voltage signal or a power voltage signal, to the light emitting element to ensure that the light emitting element emits light normally. The pixel circuit 12 may include at least one thin film transistor, and may also include a plurality of thin film transistors and at least one storage capacitor, for example, a 7T1C pixel circuit, that is, the pixel circuit includes seven thin film transistors and one storage capacitor, and by cooperation of the plurality of thin film transistors and the at least one storage capacitor, the influence of the threshold voltage of the driving transistor in the pixel circuit on the display is reduced, and the display effect of the display panel is ensured. Further, the pixel circuit 12 includes a first film layer 121 and a conductive cross-stage portion 13, the conductive cross-stage portion 13 is located on a side of the first film layer 121 away from the substrate 11, and is configured to, along a first direction, i.e., the direction perpendicular to the plane of the substrate 11 (the X direction as shown in the figure), the conductive bridge 13 partially overlaps the first film layer 121, and the conductive bridge 13 is electrically connected to a portion of the first film layer 121, namely, the conductive bridging portion 13 serves as a connection transition layer between the first film layer 121 and the film layer located above the conductive bridging portion 13, so as to ensure the normal connection between the first film layer 121 and the film layer located above the conductive bridging portion 13, the first film layer 121 can be prevented from being electrically connected with the film layer positioned above the conductive bridging portion 13 through the deeper via hole, the preparation process of the display panel is ensured to be simple, meanwhile, the connection stability between the first film 121 and the film above the conductive bridging portion 13 is ensured to be high.

Further, the conductive crossover 13 includes an oxide semiconductor material, such as Indium Gallium Zinc Oxide (IGZO), and the conductive performance of the oxide semiconductor material is achieved by doping the oxide semiconductor material, so that the first film layer 121 can be normally connected to a film layer located above the conductive crossover 13 through the conductive crossover 13, and the normal operation of the display panel is ensured. Further, the conductive crossover 13 includes an oxide semiconductor material, and has a high transmittance, so that the conductive crossover 13 is partially overlapped with the first film layer 121 along a first direction (an X direction shown in the figure), and a part of the first film layer 121 can be replaced by the conductive crossover 13 in a part of the display area, thereby facilitating improvement of the light transmittance of the display panel and being suitable for the display area or the display panel with high requirements on the light transmittance.

It should be noted that the first film layer 121 may be an active layer in the pixel circuit 12, or may be other film layers, which is not limited in this embodiment of the present invention, and the following embodiments will describe in detail a specific arrangement manner of the first film layer 121.

In summary, in the display panel provided in the embodiment of the present invention, the conductive bridging layer including the oxide semiconductor material is used as a connecting bridging layer between the first film layer and other film layers in the pixel circuit, so that the first film layer can be prevented from being electrically connected to other film layers through the deeper via hole, the preparation process of the display panel is simple, and the high connection stability between the first film layer and other film layers is ensured; simultaneously, because electrically conductive bridging portion includes oxide semiconductor material, its transmissivity is higher, consequently sets up along first direction, and electrically conductive bridging portion and first rete partially overlap can adopt electrically conductive bridging portion replacement part first rete in partial display area, are favorable to promoting display panel's luminousness, are applicable to display area or display panel that have higher requirement to the luminousness.

Based on the above embodiment, with continued reference to fig. 2, the pixel circuit 12 includes a first transistor 12a, the first transistor 12a includes a polysilicon active layer, and the first film 121 includes the polysilicon active layer.

For example, the first film 121 may be a polysilicon active layer, correspondingly, the film above the conductive bridge 13 may be the source electrode 122 and the drain electrode 123, and the conductive bridge 13 including an oxide semiconductor material serves as a connection bridge between the polysilicon active layer and the source electrode 122 and the drain electrode 123, so as to ensure that the first transistor 12a operates normally.

Further, when the pixel circuit 12 includes a plurality of thin film transistors, the active layers of the plurality of thin film transistors are connected, and the light transmittance of the display panel is poor because the polysilicon active layer has poor transparency. However, at least a portion of the display area of the display panel needs to have a high light transmittance, such as a fingerprint recognition area or a camera installation area, so that the transmittance of the display panel in the prior art needs to be improved. Compared with the polysilicon material, the transmittance of the oxide semiconductor material is good, so that the conductive bridging layer 13 comprising the oxide semiconductor material is electrically connected with the polysilicon active layer, so that the conductive bridging layer 13 comprising the oxide semiconductor material can be used for replacing part of the polysilicon active layer, the transmittance of the display panel can be improved, and the light transmittance of the display panel can be improved.

Fig. 3 is a schematic structural diagram of another display panel according to an embodiment of the present invention, and as shown in fig. 3, the pixel circuit 12 further includes a second transistor 12b, and the second transistor 12b includes an oxide semiconductor active layer 12b 1; the conductive bridge 13 is disposed in the same layer as the oxide semiconductor active layer 12b 1.

Illustratively, referring to fig. 3, the display panel 10 according to the embodiment of the present invention may further include a second transistor 12b, where the second transistor 12b includes an oxide semiconductor active layer 12b1, that is, the second transistor 12b is an oxide semiconductor transistor. Compared with a polysilicon transistor, the drain current of the oxide semiconductor transistor is smaller, so that the performance of the pixel circuit 12 can be further optimized by arranging the pixel circuit 12 to include the oxide semiconductor transistor, and the good display effect of the display panel is ensured. For example, for the pixel circuit with the 7T1C structure, the initialization transistor and the threshold compensation transistor connected to the gate of the driving transistor can be provided as oxide semiconductor transistors, so that the drain currents of the initialization transistor and the threshold compensation transistor are small, the gate potential stability of the driving transistor is good, the driving capability of the driving transistor is good, and the display effect of the display panel is good.

Further, the conductive bridge portion 13 and the oxide semiconductor active layer 12b1 are disposed on the same layer, so as to ensure the structure of the display panel, which is beneficial to implementing the thin design of the display panel. Further, the conductive bridge portion 13 and the oxide semiconductor active layer 12b1 can be prepared in the same process, which ensures that the preparation process of the display panel is simple.

Next, taking the pixel circuit as an example of the first transistor and the second transistor, how to use a conductive bridging layer including an oxide semiconductor material to replace a portion of the polysilicon active layer to improve the transmittance of the display panel will be described.

Fig. 4 is a schematic diagram of a layout structure of a pixel circuit in the related art, fig. 5 is a schematic diagram of a layout structure of a pixel circuit provided in an embodiment of the present invention, and referring to fig. 4 and fig. 5, the first transistor 12a includes a signal transmission transistor; the conductive bridging portion 13 comprises a signal bridging portion 13X, and the signal bridging portion 13X is located between the film layer where the first signal transmission structure 14 is located and the film layer where the polysilicon active layer is located; along the first direction, the signal bridging portion 13X is at least partially overlapped with the polysilicon active layer of the signal transmission transistor and the first signal transmission structure 14, respectively, and the signal bridging portion is electrically connected with the signal input end of the polysilicon active layer of the signal transmission transistor and the first signal transmission structure 14, respectively.

In particular, a signal transfer transistor may be understood as a transistor that transfers a signal, such as a data voltage signal, a power supply voltage signal, or a reset voltage signal; correspondingly, the conductive bridge 13 may be a signal bridge 13X for transmitting a data voltage signal, a power voltage signal or a reset voltage signal to the signal transfer transistor; further, the first signal transfer structure 14 may be a structure that transfers a data voltage signal, a power supply voltage signal, or a reset voltage signal, such as a data voltage signal line, a power supply signal line, or a reset voltage signal line, to the signal transfer transistor through the signal bridging portion 13X. As shown in the layout structure of the pixel circuit in the prior art in fig. 4, in the prior art, a first signal transmission structure is directly and electrically connected to a polysilicon active layer of a signal transmission transistor through a deep hole, so that on one hand, the deep hole process is complex and poor connection is easily caused, and on the other hand, the polysilicon active layer of the signal transmission transistor has a large installation area and the transmittance of a display panel is poor. As shown in the layout structure of the pixel circuit provided in the embodiment of the present invention shown in fig. 5, the signal crossover 13X is at least partially overlapped with the polysilicon active layer of the signal transmission transistor and the first signal transmission structure 14, and the signal crossover 13X is electrically connected with the signal input end of the polysilicon active layer of the signal transmission transistor and the first signal transmission structure 14, respectively, and the signal crossover is used as a transmission bridge between the first signal transmission structure 14 and the signal transmission transistor, on one hand, the first signal transmission structure 14 and the signal crossover 13X are electrically connected with the polysilicon active layer of the signal transmission transistor through shallow holes, so as to ensure simple connection process and stable connection; on the other hand, the original region provided with the polycrystalline silicon active region can be replaced by the signal crossover part 13X, so that the arrangement area of the polycrystalline silicon active layer is reduced, the light transmittance of the display panel is improved, and the good light transmission effect of at least part of the display region of the display panel is ensured.

It should be noted that, the signal input terminal in the foregoing embodiment may be a source terminal or a drain terminal, i.e., a source or a drain, of the thin film transistor, which is not limited in this embodiment of the present invention. Correspondingly, when the source end is a signal input end, the drain end is a signal output end; or, when the drain terminal is a signal input terminal, the corresponding source terminal is a signal output terminal.

Next, the arrangement of the signal bridge portions corresponding to different signal transfer transistors will be described in detail with reference to fig. 4 and 5.

As shown in fig. 4 and 5, the signal transmission transistor includes a data signal transmission transistor M2, the signal crossover 13X further includes a data signal crossover 13X1, the first signal transmission structure 14 includes a data signal line 141, the data signal crossover 13X1 is located between a film layer where the data signal line 141 is located and a film layer where the polysilicon active layer is located, along a first direction, the data signal crossover 13X1 at least partially overlaps with the polysilicon active layer of the data signal transmission transistor M2 and the data signal line 141, and the data signal crossover 13X1 is electrically connected with a signal input terminal of the polysilicon active layer of the data signal transmission transistor M2 and the data signal line 141, respectively;

and/or, the signal transmission transistor includes a power signal transmission transistor M1, the signal crossover 13X further includes a power signal crossover 13X2, the first signal transmission structure 14 includes a power signal line 142, the power signal crossover 13X2 is located between a film layer where the power signal line 142 is located and a film layer where the polysilicon active layer is located, along the first direction, the power signal crossover 13X2 at least partially overlaps with the polysilicon active layer of the power signal transmission transistor M1 and the power signal line 142, respectively, and the power signal crossover 13X2 is electrically connected with a signal input end of the polysilicon active layer of the power signal transmission transistor M1 and the power signal line 142, respectively;

and/or, the signal transmission transistor includes a reset signal transmission transistor M7, the signal crossover 13X includes a reset signal crossover 13X3, the first signal transmission structure 14 includes a reset signal line 143 and a reset signal transmission structure 144 electrically connected to each other, the reset signal crossover 13X3 is located between a film layer where the reset signal transmission structure 144 is located and a film layer where a polysilicon active layer is located, along the first direction, the reset signal crossover 13X3 at least partially overlaps with the polysilicon active layer of the reset signal transmission transistor M7 and the reset signal transmission structure 144, and the reset signal crossover 13X3 is electrically connected with a signal input end of the polysilicon active layer of the reset signal transmission transistor M7 and the reset signal transmission structure 144, respectively.

Illustratively, as shown in conjunction with fig. 4 and 5, the signal transmission transistor includes a data signal transmission transistor M2, and the data signal transmission transistor M2 is used for transmitting a data signal to the gate of the driving transistor. As shown in fig. 4, in the prior art, the data signal line 141 ' is directly electrically connected to the signal input terminal of the polysilicon active layer of the data signal transmission transistor M2 ' through the via hole, on one hand, the connection via hole is deep, the via hole process is complex and the connection is easy to be unstable, and on the other hand, the polysilicon active layer of the data signal transmission transistor M2 ' has a large installation area, which is not favorable for realizing high light transmittance of the display panel. As shown in fig. 5, by adding the data signal bridging portion 13X1, and setting the data signal bridging portion 13X1 to be located between the film layer where the data signal line 141 is located and the film layer where the polysilicon active layer is located, along the first direction, the data signal bridging portion 13X1 is at least partially overlapped with the polysilicon active layer of the data signal transmission transistor M2 and the data signal line 141, respectively, and the data signal bridging portion 13X1 is electrically connected with the signal input terminal of the polysilicon active layer of the data signal transmission transistor M2 and the data signal line 141, respectively, the data signal line 141 is electrically connected with the polysilicon active layer of the data signal transmission transistor M2 through the data signal bridging portion 13X1, the connection via hole between the data signal line 141 and the data signal bridging portion 13X1 and the connection via hole between the data signal bridging portion 13X1 and the polysilicon active layer of the data signal transmission transistor M2 are shallow holes, on the one hand, a deep hole process can be avoided, the simple via hole process and high connection stability are ensured, and on the other hand, the light transmittance of the data signal bridging part 13X1 containing the oxide semiconductor material is good, so that part of the polysilicon active layer is replaced by the data signal bridging part 13X1, and the light transmittance effect of the display panel can be improved.

Further, as shown in fig. 4 and 5, the signal transmission transistor includes a power signal transmission transistor M1, and the power signal transmission transistor M1 is used for transmitting a power voltage signal to the anode of the light emitting diode. As shown in fig. 4, in the prior art, the power signal line 142 ' is directly electrically connected to the signal input terminal of the polysilicon active layer of the power signal transmission transistor M1 ' through the via hole, on one hand, the connection via hole is deep, the via hole process is complex and the connection is easy to be unstable, and on the other hand, the polysilicon active layer of the power signal transmission transistor M1 ' has a large installation area, which is not favorable for realizing high light transmittance of the display panel. As shown in fig. 5, by adding the power signal bridging portion 13X2, and setting the power signal bridging portion 13X2 to be located between the film layer where the power signal line 142 is located and the film layer where the polysilicon active layer is located, along the first direction, the power signal bridging portion 13X2 is at least partially overlapped with the polysilicon active layer of the power signal transmission transistor M1 and the power signal line 142, respectively, and the power signal bridging portion 13X2 is electrically connected with the signal input terminal of the polysilicon active layer of the power signal transmission transistor M1 and the power signal line 142, respectively, the electrical connection between the power signal line 142 and the polysilicon active layer of the power signal transmission transistor M1 is realized by the power signal bridging portion 13X2, the connection via hole between the power signal line 142 and the power signal bridging portion 13X2 and the connection via hole between the power signal bridging portion 13X2 and the polysilicon active layer of the power signal transmission transistor M1 are shallow holes, on the one hand, a deep hole process can be avoided, the simple via hole process and high connection stability are ensured, and on the other hand, the light transmittance of the power signal bridging part 13X2 containing the oxide semiconductor material is good, so that part of the polysilicon active layer is replaced by the power signal bridging part 13X2, and the light transmittance effect of the display panel can be improved.

Further, as shown in fig. 4 and 5, the signal transmission transistor includes a reset signal transmission transistor M7, and the reset signal transmission transistor M7 is used for transmitting a reset signal to the anode of the light emitting diode, so as to prevent the display signal residue of the previous frame from affecting the display effect of the current frame. As shown in fig. 4, in the prior art, the reset signal transmission structure 144 is directly electrically connected to the signal input end of the polysilicon active layer of the reset signal transmission transistor M7 'through the via hole, so that the connection via hole is deeper, the via hole process is complex and the connection is unstable, and the polysilicon active layer of the reset signal transmission transistor M7' has a larger area, which is not favorable for achieving high light transmittance of the display panel. As shown in fig. 5, by adding the reset signal crossover 13X3, and setting the reset signal crossover 13X3 between the film layer of the reset signal transmission structure 144 and the film layer of the polysilicon active layer, along the first direction, the reset signal crossover 13X3 is at least partially overlapped with the polysilicon active layer of the reset signal transmission transistor M7 and the reset signal transmission structure 144, respectively, and the reset signal crossover 13X3 is electrically connected with the signal input terminal of the polysilicon active layer of the reset signal transmission transistor M7 and the reset signal transmission structure 144, respectively, the electrical connection between the reset signal transmission structure 144 and the polysilicon active layer of the reset signal transmission transistor M7 is realized by the reset signal crossover 13X3, the connecting via between the reset signal transmission structure 144 and the reset signal crossover 13X3 and the connecting via between the reset signal crossover 13X3 and the polysilicon active layer of the reset signal transmission transistor M7 are shallow holes, on the one hand, a deep hole process can be avoided, the simple via hole process and high connection stability are ensured, and on the other hand, the light transmittance of the reset signal bridging part 13X3 containing the oxide semiconductor material is good, so that part of the polycrystalline silicon active layer is replaced by the reset signal bridging part 13X3, and the light transmittance effect of the display panel can be improved.

Further, as shown in fig. 5, the pixel circuit 12 according to the embodiment of the present invention may further include a first reset signal line Vref 1 and a second reset signal line Vref 2 (i.e., the reset signal line 143 in the above-mentioned embodiment), where the reset signal transmitted through the first reset signal line Vref 1 is used to reset the gate of the driving transistor M3, and the reset signal transmitted through the second reset signal line Vref 2 is used to reset the anode of the light-emitting element. Further, the pixel circuit 12 may further include a P-type scan signal line ScanP for supplying a scan signal to a P-type transistor (e.g., a first transistor) and an N-type scan signal line ScanN for supplying a scan signal to an N-type transistor (e.g., a second transistor). Further, the pixel circuit 12 may further include a light emission control signal line Emit for transmitting a light emission control signal to the light emission control transistors M1 and M6 to turn on or off the light emission control transistors M1 and M6 and control whether or not the power supply voltage signal is transmitted to the light emitting element.

In summary, by providing the signal bridging portion including the data signal bridging portion, the power signal bridging portion and/or the reset signal bridging portion, and transmitting the data signal, the power signal and/or the reset signal to the corresponding signal transmission transistor through the signal bridging portion, on one hand, a deep hole process can be avoided, a simple via hole process and high connection stability can be ensured, and on the other hand, due to the fact that the light transmittance of the signal bridging portion including the oxide semiconductor material is good, a part of the polysilicon active layer is replaced by the signal bridging portion, the light transmittance effect of the display panel can be improved.

It should be noted that fig. 5 only illustrates that the signal bridge portion includes the data signal bridge portion, the power signal bridge portion, and the reset signal bridge portion at the same time, that is, the data signal, the power signal, and the reset signal are transmitted to the corresponding signal transmission transistor through the corresponding signal bridge portion at the same time.

On the basis of the above embodiment, as shown with continued reference to fig. 4 and 5, the first transistor includes the driving transistor M3, and the second transistor includes the threshold compensation transistor M4; the conductive bridge 13 further includes an active layer bridge 13Y; the active layer bridge 13Y is provided integrally with the oxide semiconductor active layer of the threshold compensation transistor M4; in the first direction, the active layer bridge 13Y at least partially overlaps the signal output terminal of the polysilicon active layer of the driving transistor M3, and the active layer bridge 13Y is electrically connected to the signal output terminal of the polysilicon active layer of the driving transistor M3 and the signal input terminal of the oxide semiconductor active layer of the threshold compensation transistor M4, respectively.

As shown in fig. 4, in the prior art, the signal output terminal of the polysilicon active layer of the driving transistor M3 ' and the signal input terminal of the oxide semiconductor active layer of the threshold compensation transistor M4 ' are connected by a connection portion 012, and the connection portion 012 and the data signal line 141 ' are provided with the same material on the same layer, and may be metal, for example. Therefore, the connection via hole between the connection portion 012 and the signal output end of the polysilicon active layer of the driving transistor M3' is deep, and the connection portion 012 is opaque, which affects the light transmittance of the display panel. As shown in fig. 5, the conductive bridge 13 according to the embodiment of the present invention further includes an active layer bridge 13Y, the active layer bridge 13Y is integrally disposed with the oxide semiconductor active layer of the threshold compensation transistor M4, and the active layer bridge 13Y is electrically connected to the signal output terminal of the polysilicon active layer of the driving transistor M3 and the signal input terminal of the oxide semiconductor active layer of the threshold compensation transistor M4, so that the signal output terminal of the polysilicon active layer of the driving transistor M3 and the signal input terminal of the oxide semiconductor active layer of the threshold compensation transistor M4 can be connected by a shallow hole, which ensures simple connection process and good connection stability; further, since the light transmittance of the active layer crossover 13Y including the oxide semiconductor material is good, the connection portion 012 made of a metal material is replaced by the active layer crossover 13Y, so that the good light transmittance of the display panel can be ensured, and the light transmittance effect of the display panel is improved.

On the basis of the above embodiment, with continued reference to fig. 2, the first transistor 12a further includes a first source 122 and a first drain 123 disposed in the same layer; the conductive crossover 13 comprises an electrode crossover 13Z, and the electrode crossover 13Z is located between the film layer where the first source 122 is located and the film layer where the polysilicon active layer is located; in a first direction (X direction as shown in the figure), the electrode bridge 13Z at least partially overlaps the polysilicon active layer, the first source electrode 122 and the first drain electrode 123, respectively, and the electrode bridge 13Z is electrically connected to the polysilicon active layer, the first source electrode 122 and the first drain electrode 123, respectively.

Illustratively, the conductive bridge 13 includes an electrode bridge 13Z, that is, the electrode bridge is used as a bridge between the first source electrode 122 and the first drain electrode 123 and the polysilicon active layer, the electrode bridge 13Z is electrically connected to the polysilicon active layer and the first source electrode 122 and the first drain electrode 123 through shallow holes, so as to ensure normal connection between the polysilicon active layer and the first source electrode 122 and the first drain electrode 123, avoid electrical connection between the polysilicon active layer and the first source electrode and the first drain electrode through deep vias, ensure a simple manufacturing process of the display panel, and ensure high connection stability between the polysilicon active layer and the first source electrode 122 and the first drain electrode 123.

On the basis of the foregoing embodiment, fig. 6 is a schematic layout structure diagram of another pixel circuit provided in the embodiment of the present invention, as shown in fig. 6, the pixel circuit 12 includes a first transistor 12a, and the first transistor 12a includes a driving transistor M3; the first film layer 121 includes a gate of the driving transistor M3; the conductive bridge portion 13 includes a first connection bridge portion 13K, and the first connection bridge portion 13K is located between the film layer where the second signal transmission structure 15 is located and the film layer where the gate of the driving transistor M3 is located; in the first direction, the first connection bridge 13K at least partially overlaps the gate of the driving transistor M3 and the second signal transmission structure 15, respectively, and the first connection bridge 13K is electrically connected to the gate of the driving transistor M3 and the second signal transmission structure 15, respectively.

For example, in the pixel circuit, the gate of the driving transistor needs to be electrically connected to the signal output terminal of the initialization transistor, and as shown in fig. 6, the gate of the driving transistor M3 is electrically connected to the signal output terminal of the initialization transistor M5 through the second signal transmission structure 15 at the N1 node. As shown in fig. 4, in the prior art, the second signal transmission structure 15 'is electrically connected to the gate of the driving transistor M3' directly through the via hole, and since the second signal transmission structure 15 'is generally disposed on the same layer as the data signal line 141', the second signal transmission structure 15 'is electrically connected to the gate of the driving transistor M3' through a deep hole, which is complex in deep hole process and easily causes poor connection. As shown in fig. 6, the conductive bridging portion 13 creatively includes a first connection bridging portion 13K, the first connection bridging portion 13K is located between the film layer where the second signal transmission structure 15 is located and the film layer where the gate of the driving transistor M3 is located, and the first connection bridging portion 13K is electrically connected to the gate M3 of the driving transistor and the second signal transmission structure 15 through shallow holes, so as to ensure simple connection process and good connection stability. Furthermore, since the transmittance of the first connection bridge portion 13K including the oxide semiconductor material is good, the transmittance of the display panel is not affected when the first connection bridge portion 13K is electrically connected to the gate M3 of the driving transistor and the second signal transmission structure 15, respectively, and the transmittance of the display panel is ensured to be good.

On the basis of the foregoing embodiment, fig. 7 is a schematic diagram of a layout structure of another pixel circuit provided in the embodiment of the present invention, as shown in fig. 7, the pixel circuit 12 further includes a storage capacitor Cst, where the storage capacitor Cst includes a first capacitor plate Cst1 and a second capacitor plate Cst2, and the second capacitor plate Cst2 is located on a side of the first capacitor plate Cst1 away from the substrate; the first film layer 121 includes a second capacitive plate Cst 2; the conductive bridge 13 includes a second connection bridge 13Q, and the second connection bridge 13Q is located between the film layer where the third signal transmission structure 16 is located and the film layer where the second capacitance plate Cst2 is located; in the first direction, the second connection bridge 13Q at least partially overlaps the second capacitor plate Cst2 and the third signal transmission structure 16, respectively, and the second connection bridge 13Q is electrically connected to the second capacitor plate Cst2 and the third signal transmission structure 16, respectively.

Illustratively, the pixel circuit may further include a storage capacitor for keeping the gate potential of the driving transistor stable. Specifically, the storage capacitor includes a first capacitor plate and a second capacitor plate, the first capacitor plate can be reused as a gate of the driving transistor, and the second capacitor plate is located on a side of the first capacitor substrate away from the substrate. Furthermore, in order to ensure that the uniformity of the power supply voltage signal of the whole display panel is good, the second capacitor plate is transmitted with the power supply voltage signal, that is, the second capacitor plate is electrically connected with the power supply signal line, that is, the third signal transmission structure is the power supply signal line. As shown in fig. 4, in the prior art, the third signal transmission structure (power signal line) 16 ' is directly electrically connected to the second capacitor plate Cst2 ' of the storage capacitor Cst ' through a via hole, and since the third signal transmission structure 16 ' is generally disposed on the same layer as the data signal line 141 ', the third signal transmission structure 16 ' and the second capacitor plate Cst2 ' are electrically connected through a deep hole, which is complicated in deep hole process and easily causes poor connection. As shown in fig. 7, the conductive bridging portion 13 includes a second connection bridging portion 13Q, the second connection bridging portion 13Q is located between the film layer where the third signal transmission structure 16 (power signal line 142) is located and the film layer where the second capacitor plate Cst2 is located, and the second connection bridging portion 13Q is electrically connected to the second capacitor plate Cst2 and the third signal transmission structure 16 through shallow holes, so as to ensure simple connection process and good connection stability. Further, since the transmittance of the second connection bridge portion 13Q including the oxide semiconductor material is good, the transmittance of the display panel is not affected when the second connection bridge portion 13Q is electrically connected to the second capacitor plate Cst2 and the third signal transmission structure 16, respectively, so that the transmittance of the display panel is ensured to be good.

On the basis of the above-described embodiment, with continued reference to fig. 5, the first signal transfer structure 14 includes the data signal line 141, the power signal line 142, and the reset signal transfer structure 144; the signal bridging part 13X is electrically connected with the polysilicon active layer through a first type via hole K1, and is electrically connected with the first signal transmission structure 14 through a second type via hole K2; the first type of via hole K1 is staggered from the second type of via hole K2.

Illustratively, the signal bridging portion 13X is electrically connected to the polysilicon active layer through the first-type via hole K1, and is electrically connected to the first signal transmission structure 14 through the second-type via hole K2, both the first-type via hole K1 and the second-type via hole K2 are shallow holes, and the first-type via hole K1 and the second-type via hole K2 are simple in suvin punching process. Furthermore, the first type of via hole K1 and the second type of via hole K2 are arranged in a staggered manner, so that the design freedom of the first type of via hole K1 and the second type of via hole K2 is high, and the forming process is simple.

Further, the aperture of the second type via hole K2 is smaller than that of the first type via hole K1, that is, the size of the connection via hole between the signal bridging portion 13X and the polysilicon active layer is larger than that of the connection via hole between the signal bridging portion 13X and the first signal transmission structure 14, which is favorable for reducing the size of the first signal transmission structure 14 and improving the transmittance of the display panel.

On the basis of the above embodiment, the display area may comprise a fingerprint identification area, at least the fingerprint identification area comprising the conductive bridging portion; and/or, the display area may include an imaging element disposition area, at least the imaging element disposition area including a conductive crossover.

Because the fingerprint identification district need accept the fingerprint identification light of finger reflection, consequently the good luminousness is required in fingerprint identification district, consequently can set up at least fingerprint identification district and include electrically conductive bridging portion, replaces partial polycrystalline silicon through the electrically conductive bridging portion that contains oxide semiconductor material, promotes the printing opacity effect in fingerprint identification district at least. Further, because the imaging element sets up the district and need receive external light and carry out the formation of image, consequently the imaging element sets up the good luminousness of district requirement, consequently can set up at least the imaging element and set up the district including electrically conductive bridging portion, through the electrically conductive bridging portion replacement part polycrystalline silicon that contains oxide semiconductor material, promotes the printing opacity effect in imaging element sets up the district at least.

Based on the same inventive concept, the embodiment of the invention also provides a preparation method of the display panel, which is used for preparing the display panel in the embodiment. Specifically, fig. 8 is a schematic flow chart of a method for manufacturing a display panel according to an embodiment of the present invention, and as shown in fig. 8, the method for manufacturing a display panel according to an embodiment of the present invention includes:

and S110, providing a substrate.

The substrate may be a rigid substrate or a flexible substrate, which is not limited in the embodiment of the present invention.

And S120, preparing a pixel circuit on one side of the substrate in the display area, wherein the pixel circuit comprises a first film layer.

The pixel circuit is prepared in the display area and on the substrate side, and the pixel circuit may include at least one thin film transistor, and may also include a plurality of thin film transistors and at least one storage capacitor, for example, a 7T1C pixel circuit, that is, the pixel circuit includes seven thin film transistors and one storage capacitor, and through cooperation of the plurality of thin film transistors and the at least one storage capacitor, the influence of the threshold voltage of the driving transistor in the pixel circuit on the display is reduced, and the display effect of the display panel is ensured. Further, the pixel circuit includes a first film layer, which is a film layer, such as an active layer or other film layers, of the pixel circuit on a side close to the substrate.

S130, preparing a conductive bridging layer on at least part of the display area and on one side of the first film layer far away from the substrate, wherein the conductive bridging part comprises an oxide semiconductor material; along the first direction, the conductive bridging part is partially overlapped with the first film layer, and the conductive bridging part is electrically connected with part of the first film layer; the first direction is perpendicular to the plane of the substrate.

The conductive bridging portion is located on one side, far away from the substrate 11, of the first film layer, and along the first direction, namely, in the direction perpendicular to the plane where the substrate is located, the conductive bridging portion is partially overlapped with the first film layer, and the conductive bridging portion is electrically connected with part of the first film layer, namely, the conductive bridging portion serves as the first film layer and is located in a connection transition layer between the film layers above the conductive bridging portion, so that normal connection between the first film layer and the film layers above the conductive bridging portion is guaranteed, the first film layer can be prevented from being electrically connected with the film layers above the conductive bridging portion through deep via holes, the preparation process of the display panel is simple, and meanwhile, the high connection stability between the first film layer and the film layers above the conductive bridging portion is guaranteed.

Further, the conductive bridging portion comprises an oxide semiconductor material, such as Indium Gallium Zinc Oxide (IGZO), the conductive performance of the conductive bridging portion is achieved by doping the oxide semiconductor material, the first film layer can be normally connected with the film layer located above the conductive bridging portion through the conductive bridging portion, and the display panel is guaranteed to normally work. Further, electrically conductive bridging portion includes oxide semiconductor material, and its transmissivity is higher, consequently sets up along first direction, and electrically conductive bridging portion and first rete partially overlap can adopt electrically conductive bridging portion to replace partial first rete in partial display area, are favorable to promoting display panel's luminousness, are applicable to display area or display panel that have higher requirement to the luminousness.

In summary, in the preparation method provided by the embodiment of the invention, the conductive bridging layer including the oxide semiconductor material is used as the connecting bridging layer between the first film layer and the other film layers in the pixel circuit, so that the first film layer can be prevented from being electrically connected with the other film layers through the deeper via hole, the preparation process of the display panel is simple, and the high connection stability between the first film layer and the other film layers is ensured; simultaneously, because electrically conductive bridging portion includes oxide semiconductor material, its transmissivity is higher, consequently sets up along first direction, and electrically conductive bridging portion and first rete partially overlap can adopt electrically conductive bridging portion replacement part first rete in partial display area, are favorable to promoting display panel's luminousness, are applicable to display area or display panel that have higher requirement to the luminousness.

On the basis of the above embodiments, the display panel further includes a second transistor, where the second transistor includes an oxide semiconductor active layer and the conductive bridge portion is disposed on the same layer as the oxide semiconductor active layer. Corresponding to this structure, fig. 9 is a schematic flow chart of another method for manufacturing a display panel according to an embodiment of the present invention, and as shown in fig. 9, the method for manufacturing a display panel according to an embodiment of the present invention includes:

s210, providing a substrate.

S220, preparing a first film layer on the display area and one side of the substrate.

And S230, preparing a bridging part on the side, far away from the substrate, of the first film layer, wherein the bridging part is partially overlapped with the first film layer and is in contact with part of the first film layer through a via hole.

Illustratively, the crossover portion and the active layer of the second transistor are arranged on the same layer and are prepared in the same process, and the active layer of the second transistor is prepared at the same time when the crossover portion is prepared on the side, away from the substrate, of the first film layer. The material of the bridge portion and the active layer comprises oxide semiconductor material, and the oxide semiconductor material is generally in a semiconductor structure and is not conductive under the action of no electric field.

And S240, preparing a grid electrode of the second transistor on the side, far away from the substrate, of the bridging part and the oxide semiconductor active layer.

And preparing a grid electrode of the second transistor on the side of the bridging part and the oxide semiconductor active layer far away from the substrate, wherein the grid electrode of the second transistor at least partially overlaps with the active layer of the second transistor along a first direction, namely a direction vertical to the plane of the substrate, and a channel region is formed in the region of the active layer of the second transistor, which corresponds to the grid electrode.

And S250, doping the crossover part and the oxide semiconductor active layer by using the grid electrode of the second transistor as a doping mask of the oxide semiconductor active layer to form a conductive crossover part and a source region and a drain region of the second transistor, wherein a channel region of the second transistor is formed in a region corresponding to the grid electrode of the second transistor.

The gate electrode of the second transistor is used as a doping mask of the oxide semiconductor active layer, namely, along the first direction, the area covered by the gate electrode of the second transistor is used as a mask covering area and is not doped, the other areas form a conductive crossover part and a source area and a drain area of the second transistor through doping, the area corresponding to the gate electrode of the second transistor forms a channel area of the second transistor and needs to be conducted under the action of gate voltage, and the other areas can be directly conducted as conductive areas. Therefore, the conductive crossover part, the source region and the drain region of the second transistor are formed by using the grid electrode of the second transistor as a doping mask after the grid electrode of the second transistor is firstly prepared, so that the conduction can be realized by completing the doping of the crossover part and the source region and the drain electrode of the second transistor, the channel region of the second transistor can be formed, the channel control of the second transistor is realized, and the preparation processes of the conductive crossover part and the source region, the drain region and the channel region of the second transistor are simple.

Based on the same inventive concept, an embodiment of the present invention further provides a display device, fig. 10 is a schematic structural diagram of the display device provided in the embodiment of the present invention, and as shown in fig. 10, the display device 100 includes the display panel 10 according to any embodiment of the present invention, so that the display device 100 provided in the embodiment of the present invention has the technical effects of the technical solutions in any embodiment, and explanations of structures and terms that are the same as or corresponding to the embodiments are not repeated herein. The display device 100 provided in the embodiment of the present invention may be a mobile phone as shown in fig. 10, and may also be any electronic product with a display function, including but not limited to the following categories: the touch screen display system comprises a television, a notebook computer, a desktop display, a tablet computer, a digital camera, an intelligent bracelet, intelligent glasses, a vehicle-mounted display, medical equipment, industrial control equipment, a touch interaction terminal and the like, and the embodiment of the invention is not particularly limited in this respect.

It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious modifications, rearrangements, combinations and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.

Claims

1. A display panel includes a display area;

the display panel further includes:

a substrate;

2. The display panel according to claim 1, wherein the pixel circuit comprises a first transistor including a polysilicon active layer;

the first film layer comprises a polysilicon active layer.

3. The display panel according to claim 2, wherein the first transistor comprises a signal transmission transistor;

the conductive bridging part comprises a signal bridging part, and the signal bridging part is positioned between the film layer where the first signal transmission structure is positioned and the film layer where the polycrystalline silicon active layer is positioned; along the first direction, the signal bridging part is at least partially overlapped with the polysilicon active layer of the signal transmission transistor and the first signal transmission structure respectively, and the signal bridging part is electrically connected with the signal input end of the polysilicon active layer of the signal transmission transistor and the first signal transmission structure respectively.

4. The display panel according to claim 3, wherein the signal transmission transistor comprises a data signal transmission transistor, the signal crossover further comprises a data signal crossover, the first signal transmission structure comprises a data signal line, the data signal crossover is located between a film layer where the data signal line is located and a film layer where the polysilicon active layer is located, the data signal crossover at least partially overlaps with the polysilicon active layer of the data signal transmission transistor and the data signal line respectively along the first direction, and the data signal crossover is electrically connected with a signal input terminal of the polysilicon active layer of the data signal transmission transistor and the data signal line respectively;

and/or the signal transmission transistor comprises a power supply signal transmission transistor, the signal bridging part further comprises a power supply signal bridging part, the first signal transmission structure comprises a power supply signal wire, the power supply signal bridging part is positioned between a film layer where the power supply signal wire is positioned and a film layer where the polysilicon active layer is positioned, the power supply signal bridging part is at least partially overlapped with the polysilicon active layer of the power supply signal transmission transistor and the power supply signal wire respectively along the first direction, and the power supply signal bridging part is electrically connected with a signal input end of the polysilicon active layer of the power supply signal transmission transistor and the power supply signal wire respectively;

and/or the signal transmission transistor comprises a reset signal transmission transistor, the signal crossover part comprises a reset signal crossover part, the first signal transmission structure comprises a reset signal line and a reset signal transmission structure which are electrically connected with each other, the reset signal crossover part is positioned between a film layer where the reset signal transmission structure is positioned and a film layer where the polysilicon active layer is positioned, along the first direction, the reset signal crossover part is at least partially overlapped with the polysilicon active layer of the reset signal transmission transistor and the reset signal transmission structure respectively, and the reset signal crossover part is electrically connected with a signal input end of the polysilicon active layer of the reset signal transmission transistor and the reset signal transmission structure respectively.

5. The display panel according to claim 2, wherein the pixel circuit further comprises a second transistor including an oxide semiconductor active layer;

the conductive bridging part and the oxide semiconductor active layer are arranged on the same layer.

6. The display panel according to claim 5, wherein the first transistor comprises a driving transistor, and wherein the second transistor comprises a threshold compensation transistor;

the conductive bridge further comprises an active layer bridge;

the active layer crossover is integrally arranged with an oxide semiconductor active layer of the threshold compensation transistor; along the first direction, the active layer bridging part is at least partially overlapped with a signal output end of a polycrystalline silicon active layer of the driving transistor, and the active layer bridging part is respectively and electrically connected with the signal output end of the polycrystalline silicon active layer of the driving transistor and a signal input end of an oxide semiconductor active layer of the threshold compensation transistor.

7. The display panel according to claim 2, wherein the first transistor further comprises a first source and a first drain provided in the same layer;

the conductive bridging part comprises an electrode bridging part, and the electrode bridging part is positioned between the film layer where the first source electrode is positioned and the film layer where the polycrystalline silicon active layer is positioned; along the first direction, the electrode bridging portions are at least partially overlapped with the polysilicon active layer, the first source electrode and the first drain electrode respectively, and the electrode bridging portions are electrically connected with the polysilicon active layer, the first source electrode and the first drain electrode respectively.

8. The display panel according to claim 1, wherein the pixel circuit comprises a first transistor including a driving transistor;

the first film layer comprises a gate of the driving transistor;

the conductive bridging part comprises a first connecting bridging part which is positioned between the film layer where the second signal transmission structure is positioned and the film layer where the gate of the driving transistor is positioned; along the first direction, the first connection bridging part is at least partially overlapped with the gate electrode of the driving transistor and the second signal transmission structure respectively, and the first connection bridging part is electrically connected with the gate electrode of the driving transistor and the second signal transmission structure respectively.

9. The display panel of claim 1, wherein the pixel circuit further comprises a storage capacitor comprising a first capacitor plate and a second capacitor plate, the second capacitor plate being located on a side of the first capacitor plate away from the substrate;

the first film layer comprises the second capacitor plate;

the conductive bridging part comprises a second connecting bridging part, and the second connecting bridging part is positioned between the film layer where the third signal transmission structure is positioned and the film layer where the second capacitance plate is positioned; along the first direction, the second connection bridging portion is at least partially overlapped with the second capacitor plate and the third signal transmission structure respectively, and the second connection bridging portion is electrically connected with the second capacitor plate and the third signal transmission structure respectively.

10. The display panel according to claim 3, wherein the first signal transfer structure includes a data signal line, a power signal line, and a reset signal transfer structure;

the signal bridging part is electrically connected with the polycrystalline silicon active layer through a first type of via hole and is electrically connected with the first signal transmission structure through a second type of via hole;

the first type of via holes and the second type of via holes are arranged in a staggered mode.

11. The display panel according to claim 10, wherein the aperture of the second type of via is smaller than the aperture of the first type of via.

12. The display panel of claim 1, wherein the display area comprises a fingerprint identification area, at least the fingerprint identification area comprising the conductive bridge;

and/or the display area comprises an imaging element arrangement area, and at least the imaging element arrangement area comprises the conductive bridging part.

13. A method for producing a display panel for producing the display panel according to any one of claims 1 to 12, the display panel comprising a display region;

the preparation method is characterized by comprising the following steps:

providing a substrate;

preparing a pixel circuit on the display area and on one side of the substrate, wherein the pixel circuit comprises a first film layer;

preparing a conductive bridging layer on at least part of the display area and on the side of the first film layer far away from the substrate, wherein the conductive bridging part comprises an oxide semiconductor material; in a first direction, the conductive bridge portion partially overlaps the first film layer and is electrically connected with a part of the first film layer; the first direction is perpendicular to the plane of the substrate.

14. The manufacturing method according to claim 13, wherein manufacturing a pixel circuit in the display region and on the substrate side includes:

preparing a first film layer on the display area and one side of the substrate;

preparing a bridging part on the side of the first film layer far away from the substrate, wherein the bridging part is partially overlapped with the first film layer and is in contact with part of the first film layer through a via hole;

and doping the bridging part to form a conductive bridging part, wherein the conductive bridging part is electrically connected with part of the first film layer.

15. The method of manufacturing according to claim 14, further comprising manufacturing a second transistor on the substrate side, the second transistor including an oxide semiconductor active layer and the conductive bridge being disposed on a same layer as the oxide semiconductor active layer;

carrying out doping treatment on the bridging part to form a conductive bridging part, and comprising the following steps:

preparing a gate electrode of the second transistor on a side of the bridge portion and the oxide semiconductor active layer away from the substrate;

and doping the crossover part and the oxide semiconductor active layer by using the grid electrode of the second transistor as a doping mask of the oxide semiconductor active layer to form a conductive crossover part and a source region and a drain region of the second transistor, wherein a region corresponding to the grid electrode of the second transistor forms a channel region of the second transistor.

16. A display device characterized by comprising the display panel according to any one of claims 1 to 12.