CN113866811A - Improved processing method of silicon-based micro-dosimeter - Google Patents
Improved processing method of silicon-based micro-dosimeter Download PDFInfo
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- CN113866811A CN113866811A CN202110924367.2A CN202110924367A CN113866811A CN 113866811 A CN113866811 A CN 113866811A CN 202110924367 A CN202110924367 A CN 202110924367A CN 113866811 A CN113866811 A CN 113866811A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 36
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 36
- 239000010703 silicon Substances 0.000 title claims abstract description 36
- 238000003672 processing method Methods 0.000 title claims abstract description 20
- 238000005530 etching Methods 0.000 claims abstract description 26
- 239000002184 metal Substances 0.000 claims abstract description 22
- 238000000151 deposition Methods 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims abstract description 8
- 238000012545 processing Methods 0.000 claims abstract description 6
- -1 boron ions Chemical class 0.000 claims description 12
- 229910052698 phosphorus Inorganic materials 0.000 claims description 6
- 239000011574 phosphorus Substances 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
- 238000001514 detection method Methods 0.000 claims description 5
- 239000004698 Polyethylene Substances 0.000 claims description 4
- 230000001590 oxidative effect Effects 0.000 claims description 4
- 229920003023 plastic Polymers 0.000 claims description 4
- 239000004033 plastic Substances 0.000 claims description 4
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 4
- 229920000573 polyethylene Polymers 0.000 claims description 4
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 238000002347 injection Methods 0.000 claims description 2
- 239000007924 injection Substances 0.000 claims description 2
- 229910052681 coesite Inorganic materials 0.000 claims 1
- 229910052906 cristobalite Inorganic materials 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 229910052682 stishovite Inorganic materials 0.000 claims 1
- 229910052905 tridymite Inorganic materials 0.000 claims 1
- 238000005259 measurement Methods 0.000 abstract description 9
- 230000003647 oxidation Effects 0.000 abstract description 6
- 238000007254 oxidation reaction Methods 0.000 abstract description 6
- 238000002955 isolation Methods 0.000 abstract description 5
- 239000000463 material Substances 0.000 abstract description 3
- 230000008569 process Effects 0.000 abstract description 3
- 230000004071 biological effect Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000004980 dosimetry Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000005865 ionizing radiation Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 235000001674 Agaricus brunnescens Nutrition 0.000 description 1
- 231100000987 absorbed dose Toxicity 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000031018 biological processes and functions Effects 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/02—Dosimeters
- G01T1/026—Semiconductor dose-rate meters
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Measurement Of Radiation (AREA)
Abstract
The invention relates to an improved processing method of a silicon-based micro-dosimeter. By adopting the method provided by the invention, the P electrode can be injected into the inner wall of the concentric circular groove formed by etching on the wafer and oxidation protection is carried out, and the N electrode is injected into the center of the concentric circular groove and oxidation protection is carried out, so that the isolation protection of the P electrode and the N electrode in the processing process of the silicon-based micro-dosimeter is realized; then silicon outside the concentric circular groove is removed through etching, and equivalent materials of human tissues are refilled so as to improve the measurement accuracy of the silicon-based micro-dosimeter; and finally, etching and depositing metal on the oxide layer of the electrode part, and removing redundant deposited metal to only reserve the part for connecting the leads on the same electrode, thereby realizing the complete isolation of the N + electrode lead and the P + electrode lead. By adopting the method provided by the invention, the potential doubling hazard in the prior art can be avoided, and the measurement accuracy and stability of the silicon-based micro-dosimeter are improved.
Description
Technical Field
The invention belongs to the technical field of micro-dose measurement, and relates to an improved processing method of a silicon-based micro-dose meter.
Background
The radiation biological effect depends on the distribution of the energy deposited by ionizing radiation at the microscopic scale in the biological tissue and the complex biological processes caused thereby, and therefore, the energy deposition micro-distribution of ionizing radiation is very important in the research of biological effect. The macroscopic dose can only give the average value of the absorbed dose of the biological tissue on a macroscopic large scale, and the randomness of microscopic action cannot be reflected. Therefore, macro-dosimetry is not applicable when revealing the microscopic nature of the radiation biological effect, and it is important to develop micro-dosimetry studies on a cellular or even sub-cellular scale.
One of the rings essential in microdosing studies is microdosing. To date, two major micro-dosimeters have been developed: a tissue equivalent proportional counter and a silicon-based semiconductor micro-dose meter. The tissue equivalent proportional counter has long development time and mature measurement technology, but has the defects of low spatial resolution, capability of simulating a single cell only by compressed gas, obvious wall effect, complicated gas supply device, high-pressure bias requirement and the like in micro-dose measurement. The silicon-based micro-dosimeter developed later has the advantages of high spatial resolution, fast response, strong output signal, capability of truly simulating cell scale from the physical level and the like.
The silicon-based micro-dosimeter is developed for more than twenty years, five improvements are made on the aspect of physical structure, but the silicon-based micro-dosimeter is very easy to generate doubling faults in the process of preparing the silicon-based micro-dosimeter by adopting the existing processing technique. Therefore, there is a need for an improved processing method to eliminate the potential for merging during the preparation of silicon-based micro-dosimeters, so as to ensure the measurement accuracy and stability of the silicon-based micro-dosimeters.
Disclosure of Invention
Aiming at the defects in the prior art, the invention aims to provide an improved processing method of a silicon-based micro-dosimeter, which can realize the complete isolation of metal connecting wires of an N + electrode and a P + electrode and solve the hidden wire doubling danger in the prior processing technology, thereby ensuring the measurement accuracy and stability of the silicon-based micro-dosimeter.
To achieve the object, the present invention provides an improved silicon-based micro-dosimeter processing method, comprising the steps of:
(1) preparing an SOI wafer, and etching a plurality of concentric circular grooves on an Si layer of the SOI wafer;
(2) forming P + electrodes on the inner cylindrical side surface and the outer cylindrical side surface of each concentric circular ring-shaped groove, and injecting polycrystalline silicon into the concentric circular ring-shaped grooves to isolate the electrodes;
(3) oxidizing the upper surface of the SOI wafer to form an oxide layer to protect the electrode; etching the oxide layer at the center of the concentric circular ring-shaped groove, forming a groove exposing the wafer at the center of the concentric circular ring-shaped groove, forming an N + electrode in the groove, and oxidizing the surface of the N + electrode;
(4) removing redundant oxide layers outside the concentric circular grooves on the SOI wafer through etching; removing redundant Si outside the concentric circular groove on the SOI wafer by etching, and filling hydrogen-containing plastic flush with the oxide layer outside the concentric circular groove;
(5) removing the oxide layers on the surfaces of the N + electrode and the P + electrode by etching;
(6) depositing metal Al on the upper surface of the SOI wafer, and simultaneously filling the oxide layer part removed by etching in the step (5) with the metal Al to be in complete contact with the exposed N + electrode and the exposed P + electrode;
(7) and reserving a part of the deposited metal Al connected with the same electrode, and removing the deposited metal Al on other parts of the upper surface of the SOI wafer by etching to form the processing and forming detection array.
Furthermore, the cross section of the SOI wafer is a square with the side length of 1cm, the thickness of the Si layer is 10 mu m, and the SiO layer is buried in the oxide layer2The thickness was 2 μm.
Furthermore, the plurality of concentric circular grooves are arranged in a square grid array, the inner cylinder size of each concentric circular groove is phi 10 microns multiplied by 10 microns, the outer cylinder size is phi 11 microns multiplied by 10 microns, and the center distance between two adjacent concentric circular grooves is 40 microns.
Further, the P + electrode is formed by implanting trivalent boron ions into the inner cylindrical side surface and the outer cylindrical side surface of each concentric circular groove.
Furthermore, the concentric circular grooves are filled with the polycrystalline silicon and are flush with the upper surface of the SOI wafer.
Further, the thickness of the oxide layer is 1 μm.
Further, the groove is a cylindrical groove with the diameter of 1 μm and the depth of 1 μm.
Further, the N + electrode is formed by implanting pentavalent phosphorus ions into the groove, the implantation depth of the pentavalent phosphorus ions being 1 μm.
Further, the plastic is polymethyl methacrylate or polyethylene.
Further, the deposition thickness of the metal Al on the upper surface of the SOI wafer sheet is 1 μm.
The improved silicon-based micro-dosimeter processing method has the advantages that the P electrode is injected into the inner wall of a concentric circular groove formed by etching on an SOI wafer and is subjected to oxidation protection, and the N electrode is injected into the center of the concentric circular groove and is subjected to oxidation protection at the same time, so that the isolation protection of the P electrode and the N electrode in the silicon-based micro-dosimeter processing process is realized; then, silicon outside the concentric circular groove is removed through etching to form an independent mushroom-shaped detection unit, and equivalent materials of human tissues are filled in the detection unit so as to improve the measurement accuracy of the silicon-based micro-dosimeter; and finally, etching and depositing metal on the oxide layer of the electrode part, removing redundant deposited metal, and only reserving a lead part connected with the same electrode, thereby realizing the complete isolation of the metal connecting wire of the N + electrode and the metal connecting wire of the P + electrode. By adopting the method provided by the invention, the potential doubling hazard in the prior art can be avoided, and the measurement accuracy and stability of the silicon-based micro-dosimeter can be improved.
Drawings
Fig. 1 is a schematic flow chart of a processing method of an improved silicon-based micro-dosimeter according to an embodiment of the invention.
FIG. 2 is a partial top view of a machined detector array according to the present invention.
Detailed Description
The invention is further described with reference to the following figures and detailed description.
As shown in fig. 1, the improved silicon-based micro-dosimeter processing method of the invention comprises the following steps:
(1) an SOI (silicon on insulator) wafer having a square cross section with a side length of 1cm and a thickness of 10 μm of an Si layer and an embedded oxide layer of SiO was prepared2The thickness was 2 μm.
(2) A plurality of concentric circular grooves are etched in a Si layer of an SOI wafer and are arranged in a square grid array, the size of an inner cylinder of each concentric circular groove is phi 10 microns multiplied by 10 microns, the size of an outer cylinder of each concentric circular groove is phi 11 microns multiplied by 10 microns, and the distance between the centers of two adjacent concentric circular grooves is 40 microns.
(3) And trivalent boron ions are implanted into the inner cylindrical side surface and the outer cylindrical side surface of each concentric circular ring-shaped groove to form a P + electrode.
(4) And injecting polysilicon into the concentric circular grooves to isolate the electrodes, wherein the polysilicon is filled in the grooves and is flush with the upper surface of the SOI wafer.
(5) And carrying out oxidation treatment on the upper surface of the SOI wafer to protect the P + electrode, wherein the thickness of the formed oxide layer is controlled to be 1 mu m.
(6) And etching the circle center of the concentric circular groove to form a cylindrical groove exposing the wafer at the circle center of the concentric circular groove, wherein the diameter of the groove is 1 micrometer, and the depth of the groove is 1 micrometer.
(7) And injecting pentavalent phosphorus ions into the groove to form an N + electrode, wherein the injection depth of the pentavalent phosphorus ions is controlled to be about 1 mu m.
(8) And carrying out oxidation treatment on the surface of the N + electrode to protect the N + electrode.
(9) The excess oxide layer outside each concentric circular groove is removed by etching.
(10) Excess Si outside each concentric circular ring-shaped trench is removed by etching to form individual "mushroom" shaped array structures.
(11) Filling the etched part in the step (10) with polymethyl methacrylate (PMMA), Polyethylene (PE) or other hydrogen-containing materials equivalent to or close to human tissues, and making the part flush with the oxide layer.
(12) And removing the oxide layers on the surfaces of the N + electrode and the P + electrode by etching to expose the N + electrode and the P + electrode.
(13) And (3) depositing metal Al with the thickness of about 1 mu m on the upper surface of the SOI wafer, and enabling the parts of the surface oxidation layers of the N + electrode and the P + electrode, which are removed by etching in the step (12), of the metal Al to be in complete contact with the exposed N + electrode and the exposed P + electrode.
(14) And reserving a part for connecting the deposited metal Al on the same kind of electrode, and removing the deposited metal Al on other parts of the upper surface of the SOI wafer by etching, so that the metal connecting wire 1 of the N + electrode and the metal connecting wire 2 of the P + electrode shown in the figure 2 are completely isolated, the parallel condition is not generated, and the detection array processed and molded as shown in the figure 2 is formed.
The above-described embodiments are merely illustrative of the present invention, and those skilled in the art can make various changes and modifications to the present invention without departing from the spirit and scope of the present invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (10)
1. An improved silicon-based micro-dosimeter processing method, characterized in that the method comprises the following steps:
(1) preparing an SOI wafer, and etching a plurality of concentric circular grooves on an Si layer of the SOI wafer;
(2) forming P + electrodes on the inner cylindrical side surface and the outer cylindrical side surface of each concentric circular ring-shaped groove, and injecting polycrystalline silicon into the concentric circular ring-shaped grooves to isolate the electrodes;
(3) oxidizing the upper surface of the SOI wafer to form an oxide layer to protect the electrode; etching the oxide layer at the center of the concentric circular ring-shaped groove, forming a groove exposing the wafer at the center of the concentric circular ring-shaped groove, forming an N + electrode in the groove, and oxidizing the surface of the N + electrode;
(4) removing redundant oxide layers outside the concentric circular grooves on the SOI wafer through etching; removing redundant Si outside the concentric circular groove on the SOI wafer by etching, and filling hydrogen-containing plastic flush with the oxide layer outside the concentric circular groove;
(5) removing the oxide layers on the surfaces of the N + electrode and the P + electrode by etching;
(6) depositing metal Al on the upper surface of the SOI wafer, and simultaneously filling the oxide layer part removed by etching in the step (5) with the metal Al to be in complete contact with the exposed N + electrode and the exposed P + electrode;
(7) and reserving a part of the deposited metal Al connected with the same electrode, and removing the deposited metal Al on other parts of the upper surface of the SOI wafer by etching to form the processing and forming detection array.
2. The improved silicon-based micro-dosimeter processing method as claimed in claim 1, wherein the cross section of the SOI wafer is a square with 1cm side length, the thickness of the Si layer is 10 μm, and the buried oxide layer is SiO2The thickness was 2 μm.
3. The improved silicon-based micro-dosimeter processing method according to claim 1, wherein the plurality of concentric circular ring-shaped grooves are arranged in a square grid array, an inner cylinder size of each concentric circular ring-shaped groove is Φ 10 μm × 10 μm, an outer cylinder size of each concentric circular ring-shaped groove is Φ 11 μm × 10 μm, and a center distance between two adjacent concentric circular ring-shaped grooves is 40 μm.
4. The improved silicon-based micro-dosimeter processing method of claim 1, wherein the P + electrode is formed by implanting trivalent boron ions into the inner cylindrical side and the outer cylindrical side of each concentric circular groove.
5. The improved silicon-based micro-dosimeter processing method of claim 1, wherein the polysilicon fills the concentric circular grooves and is flush with the upper surface of the SOI wafer.
6. The improved silicon-based micro-dosimeter processing method of claim 1, wherein the thickness of the oxide layer is 1 μm.
7. An improved silicon-based micro-dosimeter processing method according to any one of claims 1 to 6, wherein the grooves are cylindrical grooves with a diameter of 1 μm and a depth of 1 μm.
8. The improved silicon-based micro-dosimeter processing method of claim 7, wherein the N + electrode is formed by injecting pentavalent phosphorus ions into the groove, and the injection depth of the pentavalent phosphorus ions is 1 μm.
9. The improved silicon-based micro-dosimeter processing method of claim 8, wherein the plastic is polymethyl methacrylate or polyethylene.
10. An improved silicon-based micro-dosimeter processing method according to claim 8 or 9, wherein the deposition thickness of metallic Al on the upper surface of the SOI wafer is 1 μm.
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| CN202110924367.2A CN113866811B (en) | 2021-08-12 | 2021-08-12 | Improved silicon-based micro-dosimeter processing technique |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2629322A2 (en) * | 2012-02-20 | 2013-08-21 | Ixys Corporation | Power device manufacture on the recessed side of a thinned wafer |
| US20150123240A1 (en) * | 2013-11-07 | 2015-05-07 | Addison R. Crockett | Semiconductor Device and Method of Forming Shallow P-N Junction with Sealed Trench Termination |
| CN104749605A (en) * | 2013-12-30 | 2015-07-01 | 中国辐射防护研究院 | Mentoring method and device for measuring effective dose on real time |
| CN105513971A (en) * | 2015-12-25 | 2016-04-20 | 上海华虹宏力半导体制造有限公司 | Manufacturing method of trench gate power device with shield gate |
| CN106783600A (en) * | 2016-12-20 | 2017-05-31 | 西安电子科技大学 | A kind of solid state plasma PiN diodes and preparation method thereof |
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2021
- 2021-08-12 CN CN202110924367.2A patent/CN113866811B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2629322A2 (en) * | 2012-02-20 | 2013-08-21 | Ixys Corporation | Power device manufacture on the recessed side of a thinned wafer |
| US20150123240A1 (en) * | 2013-11-07 | 2015-05-07 | Addison R. Crockett | Semiconductor Device and Method of Forming Shallow P-N Junction with Sealed Trench Termination |
| CN104749605A (en) * | 2013-12-30 | 2015-07-01 | 中国辐射防护研究院 | Mentoring method and device for measuring effective dose on real time |
| CN105513971A (en) * | 2015-12-25 | 2016-04-20 | 上海华虹宏力半导体制造有限公司 | Manufacturing method of trench gate power device with shield gate |
| CN106783600A (en) * | 2016-12-20 | 2017-05-31 | 西安电子科技大学 | A kind of solid state plasma PiN diodes and preparation method thereof |
Non-Patent Citations (3)
| Title |
|---|
| LINH T. TRAN 等: "Thin Silicon Microdosimeter Utilizing 3-D MEMS Fabrication Technology: Charge Collection Study and Its Application in Mixed Radiation Fields", IEEE TRANSACTIONS ON NUCLEAR SCIENCE, vol. 65, no. 1, pages 467 - 472, XP011675935, DOI: 10.1109/TNS.2017.2768062 * |
| S. PERACCHI 等: "Modelling of the Silicon-On-Insulator microdosimeter response within the International Space Station for astronauts’ radiation protection", RADIATION MEASUREMENTS, pages 1 - 7 * |
| 张正元,徐学良,税国华,曾莉,刘玉奎: "SOI电路窄沟槽隔离技术研究", 微电子学, no. 04, pages 364 - 366 * |
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