CN113862626A - Material processing method and equipment - Google Patents
Material processing method and equipment Download PDFInfo
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- CN113862626A CN113862626A CN202111074839.6A CN202111074839A CN113862626A CN 113862626 A CN113862626 A CN 113862626A CN 202111074839 A CN202111074839 A CN 202111074839A CN 113862626 A CN113862626 A CN 113862626A
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- heating
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- cooling
- material processing
- vacuum cavity
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
Abstract
The invention discloses a material processing method and equipment, and relates to the technical field of materials. The material processing method comprises the following steps: moving a material to be processed in a vacuum chamber to a first preset position; heating the material to be processed by adopting the heating device, wherein the heating device is positioned in the vacuum cavity; moving the heated material to be treated to a second preset position; and cooling the material to be processed after heating by adopting the cooling device, wherein the cooling device is positioned in the vacuum cavity. The invention can realize the heat treatment and the cold treatment of the material in the same vacuum chamber, and can quickly cool the heat-treated material so as to ensure the film-forming quality of magnetron sputtering.
Description
Technical Field
The invention relates to the technical field of materials, in particular to a material processing method and equipment.
Background
In the prior art, before magnetron sputtering of physical vapor deposition is performed on a material, surface heat treatment needs to be performed on the material to remove impure gases on the surface of the material, so that the quality and the adhesiveness of a magnetron sputtering film are improved.
Generally, the heat treatment of the material is performed in a high vacuum environment, and the heating temperature is usually higher in order to completely remove the miscellaneous gases, so that the material after the heat treatment cannot be rapidly and naturally cooled. In some fields with higher process requirements, for example, the crystal grain of magnetron sputtering is required to be smaller or the film forming stress is required to meet specific conditions, and the magnetron sputtering is performed after the temperature of the material surface is lower than a certain value to meet the requirements. The existing material surface heat treatment equipment does not have the function of cooling the material, and cannot meet the actual requirement.
In summary, how to implement the heat treatment and the cold treatment of the material in the same vacuum chamber, and rapidly cool the heat-treated material to ensure the film-forming quality of the magnetron sputtering is a technical problem to be solved by those skilled in the art.
Disclosure of Invention
The invention provides a material processing method and equipment, which can realize heat treatment and cold treatment on a material in the same vacuum chamber and can quickly cool the heat-treated material so as to ensure the film-forming quality of magnetron sputtering.
The invention provides the following scheme:
in one aspect, the present invention provides a material processing method for processing a material before magnetron sputtering, including:
moving a material to be processed in a vacuum chamber to a first preset position;
heating the material to be processed by adopting the heating device, wherein the heating device is positioned in the vacuum cavity;
moving the heated material to be treated to a second preset position;
and cooling the material to be processed after heating by adopting the cooling device, wherein the cooling device is positioned in the vacuum cavity.
Optionally, the heating the material to be processed by using the heating device includes:
and adjusting the heating rate, the heating time and the heating power of the heating device according to the heating requirement of the material to be processed.
Optionally, after moving the material to be treated after the heating to the second preset position, the method further includes:
and introducing a preset volume of inert gas into the vacuum cavity to accelerate the heat transfer between the material to be processed and the cooling device.
Optionally, the heating the material to be processed by using the heating device further includes:
acquiring a first current temperature of the material to be processed in real time;
and judging whether the first current temperature is greater than or equal to a first preset temperature or not, and if so, stopping heating the material to be processed.
Optionally, the cooling the heated material to be processed by using the cooling device includes:
acquiring a second current temperature of the material to be processed in real time;
and judging whether the second current temperature is less than or equal to a second preset temperature or not, and if so, stopping cooling the material to be processed.
In another aspect, the present invention provides a material processing apparatus for use in the material processing method, the material processing apparatus comprising:
a vacuum chamber;
the carrying platform is arranged in the vacuum cavity and used for placing a material to be processed;
the heating device is arranged in the vacuum cavity and used for heating the material to be treated;
the cooling device is arranged in the vacuum cavity and used for cooling the material to be treated;
and the transfer device is connected with the carrying platform and is used for moving the carrying platform and the material to be processed to a first preset position or a second preset position.
Optionally, the material processing apparatus further comprises:
the heating controller is connected with the heating device and used for adjusting the heating rate, the heating time and the heating power of the heating device according to the heating requirement of the material to be processed;
and the cooling controller is connected with the cooling device and is used for controlling the temperature of the cooling device.
Optionally, the material processing apparatus further comprises:
and the inert gas source is communicated with the vacuum cavity and used for introducing a preset volume of inert gas into the vacuum cavity before the material to be processed is cooled so as to accelerate the heat transfer between the material to be processed and the cooling device.
Optionally, the material processing apparatus further comprises:
and the temperature sensor is arranged in the vacuum cavity and is used for acquiring the current temperature of the material to be processed in real time.
Optionally, the heating device comprises an infrared heating lamp;
the material processing apparatus further comprises:
the quartz glass sheet is arranged between the infrared heating lamp and the carrying platform and is close to the infrared heating lamp;
the heating controller includes a silicon controlled rectifier and the cooling controller includes a heat exchanger.
According to the specific embodiment provided by the invention, the invention discloses the following technical effects:
the material processing method provided by the invention is used for processing the material before magnetron sputtering, so as to realize the integration of heat treatment and cold treatment of the material, and quickly cool the material after heat treatment, so as to ensure the film forming quality of magnetron sputtering. Specifically, firstly, in the material treatment method provided by the invention, the heating and cooling of the material to be treated are carried out in the same vacuum chamber, so that the integration of heat treatment and cold treatment of the material is realized, and the material pollution caused by heat treatment and cold treatment transfer places is avoided; secondly, after the material to be treated is heated, the material to be treated is cooled by a cooling device, so that the material to be treated can be rapidly cooled. Therefore, the material processing method provided by the invention can realize the heat treatment and cold treatment of the material in the same vacuum chamber, and can quickly cool the heat-treated material so as to ensure the film-forming quality of magnetron sputtering.
Further, in order to lower the temperature of the material to be processed to the second preset temperature, it is necessary to acquire the current temperature of the material to be processed in real time during the cooling process, and this current temperature is generally the temperature of the surface of the material to be processed. The second preset temperature can be set according to the actual requirement of magnetron sputtering, and in one embodiment, the second preset temperature is [10-80] ° c.
Of course, embodiments of the invention need not achieve all of the above-described advantages at the same time.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.
FIG. 1 is a block flow diagram of a method of material processing provided by one embodiment of the present invention;
fig. 2 is a schematic structural diagram of a material processing apparatus according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments that can be derived by one of ordinary skill in the art from the embodiments given herein are intended to be within the scope of the present invention.
It should be noted that the descriptions of the present invention with respect to the directions of "left", "right", "upper", "lower", "top", "bottom", etc. are defined based on the relationship of the orientation or position shown in the drawings, and are only for convenience of describing the present invention and simplifying the description, but do not indicate or imply that the structure described must be constructed and operated in a specific orientation, and therefore, should not be construed as limiting the present invention. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In the description of the present invention, unless otherwise expressly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning a fixed connection, a removable connection, or an integral connection; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Fig. 1 is a block flow diagram of a material processing method according to an embodiment of the present invention. As shown in fig. 1, the present invention provides a material processing method for processing a material before magnetron sputtering, including:
s10: moving a material to be processed in a vacuum chamber to a first preset position;
s20: heating the material to be processed by a heating device, wherein the heating device is positioned in the vacuum cavity;
s30: moving the heated material to be treated to a second preset position;
s40: and cooling the heated material to be processed by adopting a cooling device, wherein the cooling device is positioned in the vacuum cavity.
Wherein, the first predetermined position is a position close to the heating device, the second predetermined position is a position close to the cooling device, preferably, a certain distance is set between the heating device and the cooling device to avoid mutual influence.
The material processing method provided by the embodiment is used for processing the material before magnetron sputtering, so as to realize integration of heat treatment and cold treatment of the material, and quickly cool the material after heat treatment, so as to ensure the film forming quality of magnetron sputtering. Specifically, firstly, in the material treatment method provided by the invention, the heating and cooling of the material to be treated are carried out in the same vacuum chamber, so that the integration of heat treatment and cold treatment of the material is realized, and the material pollution caused by heat treatment and cold treatment transfer places is avoided; secondly, after the material to be treated is heated, the material to be treated is cooled by a cooling device, so that the material to be treated can be rapidly cooled. Therefore, the material processing method provided by the invention can realize the integration of heat treatment and cold treatment on the material in the same vacuum chamber, and can quickly cool the heat-treated material so as to ensure the film-forming quality of magnetron sputtering.
In a specific embodiment, S20 includes:
and adjusting the heating rate, the heating time and the heating power of the heating device according to the heating requirement of the material to be treated.
The material processing method provided by the embodiment can further adjust the heating rate, the heating time and the heating power of the heating device according to the heating requirement of the material to be processed, so that the heating temperature of the heating device can be adjusted as required, the flexibility is high, the actual heating requirement of the material to be processed is met, the problem that degassing is not thorough due to too low temperature is avoided, and the material to be processed is not damaged due to too high temperature is avoided.
In a specific embodiment, after moving the heated material to be processed to the second preset position, the material processing method further includes:
and introducing inert gas with preset volume into the vacuum cavity to accelerate the heat transfer between the material to be processed and the cooling device.
In this embodiment, before the material to be processed is cooled, a certain amount of inert gas, such as argon, is introduced into the vacuum chamber to maintain a certain pressure, so as to facilitate heat transfer between the material to be processed and the cooling device.
The cooling device comprises a cooling source, and the inert gas is introduced to accelerate the heat transfer between the material to be processed and the cooling liquid, so that the material to be processed is rapidly cooled.
In a specific embodiment, heating the material to be treated with the heating device further comprises:
acquiring a first current temperature of a material to be processed in real time;
and judging whether the first current temperature is greater than or equal to a first preset temperature, if so, stopping heating the material to be processed, and finishing heating.
In the embodiment, in order to avoid damage to the material to be processed due to too high heating temperature, a first current temperature of the material to be processed is acquired in real time during the heating process, and the first current temperature is generally the temperature of the surface of the material to be processed. Wherein the first preset temperature can be set according to the actual condition of the material to be processed, and in one embodiment, the first preset temperature is 300 ℃.
In a specific embodiment, the cooling the heated material to be treated by the cooling device comprises:
acquiring a second current temperature of the material to be processed in real time;
and judging whether the second current temperature is less than or equal to a second preset temperature, if so, stopping cooling the material to be processed, and finishing cooling.
In this embodiment, in order to lower the temperature of the material to be processed to the second preset temperature, it is also necessary to acquire the current temperature of the material to be processed in real time during the cooling process, and this current temperature is generally the temperature of the surface of the material to be processed. The second preset temperature can be set according to the actual requirement of magnetron sputtering, and in one embodiment, the second preset temperature is [10-80] ° c.
Fig. 2 is a schematic structural diagram of a material processing apparatus according to an embodiment of the present invention. As shown in fig. 2, the present invention also provides a material processing apparatus for performing the material processing method provided in any one of the above embodiments, the material processing apparatus including a vacuum chamber 10, a heating device 20, a cooling device 40, and a transfer device 50. The vacuum chamber 10 is a closed chamber, and it is preferably a high vacuum chamber 10. The carrier 30 is disposed in the vacuum chamber 10 and is used for placing the material 80 to be processed. The heating device 20 is disposed in the vacuum chamber 10 for heating the material 80 to be processed. The cooling device 40 is disposed in the vacuum chamber 10 for cooling the material 80 to be processed. The transfer device 50 is connected to the stage 30 and is configured to move the stage 30 and the material 80 to be processed to a first predetermined position or a second predetermined position. Wherein the first preset position is a position close to the heating device 20, and the second preset position is a position close to the cooling device 40, and preferably, a certain distance is set between the heating device 20 and the cooling device 40 to avoid mutual influence.
The material processing equipment provided by the embodiment is used for processing the material before magnetron sputtering so as to realize the integration of heat treatment and cold treatment of the material, and quickly cooling the material after heat treatment so as to ensure the film forming quality of magnetron sputtering. Specifically, firstly, the material processing apparatus provided by the present invention heats and cools the material 80 to be processed in the same vacuum chamber 10, that is, the integration of the heat treatment and the cold treatment of the material is realized, and the material pollution caused by the transfer places of the heat treatment and the cold treatment is avoided; secondly, after the heating of the material to be processed 80 is completed, the material to be processed 80 is cooled by the cooling device 40, so that the material to be processed 80 can be rapidly cooled. Therefore, the material processing equipment provided by the invention can realize the integration of heat treatment and cold treatment on the material in the same vacuum chamber, and can quickly cool the heat-treated material so as to ensure the film-forming quality of magnetron sputtering.
In a specific embodiment, the material processing apparatus further comprises a heating controller connected to the heating device 20 for adjusting the heating rate, the heating time and the heating power of the heating device 20 according to the heating requirement of the material 80 to be processed. Can further adjust heating device 20's rate of rise, programming time and heating power according to pending material 80's heating demand through heating controller for heating device 20's heating temperature can be adjusted as required, and the flexibility is higher, satisfies pending material 80's actual heating demand, can not lead to the fact the degasification thoroughly because the temperature is low excessively, also can not lead to the fact pending material 80 to damage because the temperature is too high.
In a specific embodiment, the material processing apparatus further comprises an inert gas source in communication with the vacuum chamber 10 for introducing a predetermined volume of inert gas into the vacuum chamber 10 prior to cooling the material 80 to be processed to accelerate the heat transfer between the material 80 to be processed and the cooling liquid. Before the material 80 to be processed is cooled, a certain amount of inert gas, such as argon, is introduced into the vacuum chamber 10 to maintain a certain pressure, so as to facilitate heat transfer between the material 80 to be processed and the cooling device 40.
In a specific embodiment, the material processing apparatus further comprises a temperature sensor 60 disposed in the vacuum chamber 10 for acquiring a current temperature of the material 80 to be processed in real time. Further, the temperature sensor 60 may feed back the current temperature to the heating controller or the cooling controller. In the heating process, the heating controller adjusts the heating rate, the heating time and the heating power of the heating device 20 according to the current temperature fed back by the temperature sensor 60, and stops heating the material 80 to be processed when the current temperature is greater than or equal to the first preset temperature; in the cooling process, the cooling controller stops cooling the material to be processed 80 when the current temperature is equal to or lower than the second preset temperature.
In a specific embodiment, the heating device 20 comprises an infrared heating lamp, and the material processing apparatus further comprises a quartz glass plate 70 disposed between the infrared heating lamp and the stage 30 and adjacent to the infrared heating lamp, and heat from the infrared heating lamp is transferred to the material to be processed 80 through the quartz glass plate 70 having high conductivity to raise the surface temperature thereof. The heating controller includes a Silicon Controlled Rectifier (SCR) and the cooling controller includes a heat exchanger.
In a specific embodiment, the material to be processed 80 includes a silicon wafer, a iii-v compound semiconductor substrate, a glass plate, and the like.
In a specific embodiment, the heating device 20 is located above the vacuum chamber 10, the cooling device 40 is located below the vacuum chamber 10, and the transfer device 50 raises the stage 30 to be close to the heating device 20 when heating is necessary, and lowers the stage 30 to be close to the cooling device 40 when cooling is necessary.
In one particular embodiment, the cooling device 40 includes: a cooling water path and a cooling base, the transfer device 50 places the stage 30 on the cooling base after the stage 30 is dropped, and the cooling water path located below the cooling base cools the material 80 to be processed.
It should be noted that the heating device 20 and the cooling device 40 may be operated independently, that is, only the material 80 to be processed may be heated, or only the material 80 to be processed may be cooled.
In one particular embodiment, the temperature sensor 60 is an infrared temperature probe that is disposed in the cooling device 40.
The technical solutions provided by the present invention are described in detail above, and specific examples are applied in this document to explain the structure and the implementation of the present invention, and the descriptions of the above examples are only used to help understanding the method and the core ideas of the present invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, the specific embodiments and the application range may be changed. In view of the above, the present disclosure should not be construed as limiting the invention.
Claims (10)
1. A material processing method is used for processing materials before magnetron sputtering, and is characterized by comprising the following steps:
moving a material to be processed in a vacuum chamber to a first preset position;
heating the material to be processed by adopting a heating device, wherein the heating device is positioned in the vacuum cavity;
moving the heated material to be treated to a second preset position;
and cooling the material to be treated after heating by adopting a cooling device, wherein the cooling device is positioned in the vacuum cavity.
2. The material processing method according to claim 1, wherein said heating the material to be processed with the heating device includes:
and adjusting the heating rate, the heating time and the heating power of the heating device according to the heating requirement of the material to be processed.
3. The material processing method according to claim 1, wherein after the moving the material to be processed after the heating to a second preset position, the method further comprises:
and introducing a preset volume of inert gas into the vacuum cavity to accelerate the heat transfer between the material to be processed and the cooling device.
4. The material processing method as claimed in claim 1, wherein said heating the material to be processed using the heating device further comprises:
acquiring a first current temperature of the material to be processed in real time;
and judging whether the first current temperature is greater than or equal to a first preset temperature or not, and if so, stopping heating the material to be processed.
5. The material processing method according to claim 1, wherein said cooling the material to be processed after completion of heating with the cooling device comprises:
acquiring a second current temperature of the material to be processed in real time;
and judging whether the second current temperature is less than or equal to a second preset temperature or not, and if so, stopping cooling the material to be processed.
6. A material processing apparatus for carrying out the material processing method according to any one of claims 1 to 5, characterized by comprising:
a vacuum chamber;
the carrying platform is arranged in the vacuum cavity and used for placing a material to be processed;
the heating device is arranged in the vacuum cavity and used for heating the material to be treated;
the cooling device is arranged in the vacuum cavity and used for cooling the material to be treated;
and the transfer device is connected with the carrying platform and is used for moving the carrying platform and the material to be processed to a first preset position or a second preset position.
7. The material processing apparatus of claim 6, further comprising:
the heating controller is connected with the heating device and used for adjusting the heating rate, the heating time and the heating power of the heating device according to the heating requirement of the material to be processed;
and the cooling controller is connected with the cooling device and is used for controlling the temperature of the cooling device.
8. The material processing apparatus of claim 6, further comprising:
and the inert gas source is communicated with the vacuum cavity and used for introducing a preset volume of inert gas into the vacuum cavity before the material to be processed is cooled so as to accelerate the heat transfer between the material to be processed and the cooling device.
9. The material processing apparatus of claim 6, further comprising:
and the temperature sensor is arranged in the vacuum cavity and is used for acquiring the current temperature of the material to be processed in real time.
10. The material processing apparatus of claim 6, wherein the heating device comprises an infrared heating lamp;
the material processing apparatus further comprises:
the quartz glass sheet is arranged between the infrared heating lamp and the carrying platform and is close to the infrared heating lamp;
the heating controller includes a silicon controlled rectifier and the cooling controller includes a heat exchanger.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111074839.6A CN113862626A (en) | 2021-09-14 | 2021-09-14 | Material processing method and equipment |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202111074839.6A CN113862626A (en) | 2021-09-14 | 2021-09-14 | Material processing method and equipment |
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| CN113862626A true CN113862626A (en) | 2021-12-31 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000040698A (en) * | 1998-07-23 | 2000-02-08 | Dainippon Screen Mfg Co Ltd | Substrate heat treatment method and its device |
| CN108711556A (en) * | 2018-05-25 | 2018-10-26 | 北京北方华创微电子装备有限公司 | It goes to gas chamber and removes gas method |
| CN110911320A (en) * | 2019-12-09 | 2020-03-24 | 北京北方华创微电子装备有限公司 | Cooling device, control method thereof and semiconductor processing equipment |
-
2021
- 2021-09-14 CN CN202111074839.6A patent/CN113862626A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000040698A (en) * | 1998-07-23 | 2000-02-08 | Dainippon Screen Mfg Co Ltd | Substrate heat treatment method and its device |
| CN108711556A (en) * | 2018-05-25 | 2018-10-26 | 北京北方华创微电子装备有限公司 | It goes to gas chamber and removes gas method |
| CN110911320A (en) * | 2019-12-09 | 2020-03-24 | 北京北方华创微电子装备有限公司 | Cooling device, control method thereof and semiconductor processing equipment |
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