CN113858462A - Material receiving box, multi-wire cutting equipment and cutting process of multi-wire cutting equipment - Google Patents

Material receiving box, multi-wire cutting equipment and cutting process of multi-wire cutting equipment Download PDF

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Publication number
CN113858462A
CN113858462A CN202111226165.7A CN202111226165A CN113858462A CN 113858462 A CN113858462 A CN 113858462A CN 202111226165 A CN202111226165 A CN 202111226165A CN 113858462 A CN113858462 A CN 113858462A
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China
Prior art keywords
overflow
cutting
shell
receiving box
outlet
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CN202111226165.7A
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Chinese (zh)
Inventor
柳国伟
荆新杰
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Jingao Solar Co Ltd
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Ja Solar Co Ltd
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Priority to CN202111226165.7A priority Critical patent/CN113858462A/en
Publication of CN113858462A publication Critical patent/CN113858462A/en
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/04Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
    • B28D5/045Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0076Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for removing dust, e.g. by spraying liquids; for lubricating, cooling or cleaning tool or work
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0082Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)

Abstract

The invention discloses a material receiving box, multi-wire cutting equipment and a cutting process of the multi-wire cutting equipment. The specific embodiment comprises a material receiving box, which comprises: the overflow device comprises a shell, an overflow baffle and an overflow outlet arranged on at least one side of the shell, wherein one surface of the shell, which is opposite to the bottom of the shell, is provided with an opening; the overflow baffle is fixed at least one end in the shell, and the height of the overflow baffle is lower than that of the shell; the overflow baffle is a shell and is divided into a soaking cavity and an overflow cavity; the soaking cavity is used for receiving cutting liquid and cutting silicon wafers; the overflow cavity is communicated with the overflow outlet and is used for discharging the cutting fluid overflowing the soaking cavity through the overflow outlet. By adding the overflow baffle in the material receiving box, the outflow speed of the cutting liquid can be controlled in the cutting process, the cut crystalline silicon part can be soaked in the cutting liquid, the heat conduction of the silicon wafer in the cutting process is effectively improved, and the cutting temperature of the cutting part is reduced.

Description

Material receiving box, multi-wire cutting equipment and cutting process of multi-wire cutting equipment
Technical Field
The invention belongs to the field of crystalline silicon processing, and particularly relates to a material receiving box, multi-wire cutting equipment and a cutting process of the multi-wire cutting equipment.
Background
In the production process of the photovoltaic module, the silicon rod is inevitably required to be cut so as to obtain the silicon wafer required by the photovoltaic module. When the silicon rod is cut by adopting the multi-wire cutting assembly at present, a material receiving box is generally needed to receive materials.
In the existing material receiving box, a shell is generally of a simple hollow rectangular structure, pollution discharge structures are arranged on two sides of the bottom of the shell, and cutting fluid used for cooling a silicon wafer is directly discharged through the pollution discharge structures on the two sides of the bottom in the material receiving process, so that the existing material receiving box has the problems that line marks are easily generated on the surface of the silicon wafer in the using process, the heat conductivity is poor, and the silicon wafer is difficult to clean.
Disclosure of Invention
In view of the above, the technical problem to be solved by the present invention is to provide a material receiving box, a multi-wire cutting device and a cutting process thereof, wherein an overflow baffle is added in the material receiving box, so that part of the cutting liquid can enter an overflow cavity through the overflow baffle and be discharged from the overflow cavity, and the cut crystalline silicon part can be soaked in the cutting liquid, thereby effectively improving the heat conduction of the silicon wafer in the cutting process, reducing the cutting temperature at the cutting position, and simultaneously reducing the wire mark probability.
In order to solve the technical problems, the invention provides the following technical scheme:
in a first aspect, the present invention provides a receiving box comprising: the overflow device comprises a shell, an overflow baffle and an overflow outlet arranged on at least one side of the shell, wherein one surface of the shell, which is opposite to the bottom of the shell, is provided with an opening; the overflow baffle is fixed at least at one end in the shell, and the height of the overflow baffle is lower than that of the shell; the overflow baffle divides the shell into a soaking cavity and an overflow cavity; the soaking cavity is used for receiving cutting liquid and cutting silicon wafers; the overflow cavity is communicated with the overflow outlet and is used for discharging the cutting liquid overflowing the soaking cavity and the cut silicon wafer through the overflow outlet.
In a second aspect, the present invention provides a multi-wire sawing device comprising: the cutting fluid feeding device comprises a workbench, a left main roller, a lower main roller, a right main roller, a cutting fluid spray pipe, a wire mesh and the material receiving box; the left main roller and the right main roller are symmetrically arranged on two sides of the workbench, and the lower main roller is arranged below the workbench; the wire net is sleeved on the outer sides of the left main roller, the lower main roller and the right main roller for a circle; the cutting fluid spray pipe is arranged on at least one side of the workbench and used for spraying cutting fluid to the wire mesh; the material receiving box is arranged below the workbench and above the lower main roller, and the open end of the material receiving box faces the workbench.
In a third aspect, the present invention provides a cutting process of a multi-wire cutting apparatus, comprising:
cutting the to-be-cut crystal silicon, wherein the wire mesh brings cutting liquid into a cutting area, and the cutting liquid flowing out of the cutting area flows into a soaking cavity;
and (b) adjusting the flow of the cutting fluid sprayed by the cutting fluid spray pipe, so that a part of the cutting fluid flowing out of the cutting area flows out of the sewage discharge structure at the bottom of the soaking cavity, and a part of the cutting fluid overflows to the overflow cavity and flows out of the overflow outlet.
One embodiment of the above invention has the following advantages or benefits: according to the material receiving box provided by the embodiment of the invention, the inner part of the shell is divided into the overflow cavity and the soaking cavity by adding the overflow baffle, and the cutting liquid can overflow to the overflow cavity through the overflow baffle, so that the cut crystalline silicon part can be soaked in the cutting liquid in the soaking cavity all the time in the cutting process, the heat conduction of a silicon wafer in the cutting process is effectively improved, and the cutting temperature at the cutting position is reduced. By adopting the material receiving box, the multi-wire cutting equipment provided by the embodiment of the invention can realize that the cut crystalline silicon part can be always soaked in the cutting liquid in the soaking cavity, and the cutting effect is better.
Drawings
Figure 1 is a schematic view of a multi-wire cutting apparatus of the prior art;
FIG. 2 is a schematic view of a conventional receiving cartridge of the prior art;
figure 3 is a schematic view of a multi-wire sawing device according to an embodiment of the present invention;
FIG. 4 is a schematic cross-sectional view of an end of a pod according to another embodiment of the present invention;
FIG. 5 is a schematic view of a receiver bottom waste adjustment plate according to an embodiment of the invention;
figure 6 is a schematic view of a multi-wire sawing device according to an embodiment of the present invention;
figure 7 is a flow diagram of a multi-wire saw apparatus cutting process in accordance with an embodiment of the present invention.
The reference numbers are as follows:
10-shell
20-overflow baffle 21-soaking cavity 22-overflow cavity 221-low liquid level sensor
30-sewage discharging structure 31-sewage discharging inlet 32-sewage discharging channel 33-sewage discharging outlet 34-sewage discharging adjusting plate 35-separating plate
40-overflow outlet 50-ultrasonic transducer 60-sound intensity tester 70-workbench 80-left main roller 90-lower main roller 100-right main roller 110-cutting fluid spray pipe 120-wire mesh 130-detachable filter screen 140-mounting bracket
Detailed Description
Exemplary embodiments of the present invention are described below with reference to the accompanying drawings, in which various details of embodiments of the invention are included to assist understanding, and which are to be considered as merely exemplary. Accordingly, those of ordinary skill in the art will recognize that various changes and modifications of the embodiments described herein can be made without departing from the scope and spirit of the invention. Also, descriptions of well-known functions and constructions are omitted in the following description for clarity and conciseness.
The traditional material receiving box is adopted in the existing multi-wire cutting equipment for receiving materials, as shown in figure 1, the traditional material receiving box is arranged in the middle positions of the left main roller, the right main roller and the lower main roller, and the structure of the material receiving box and the flow direction of cutting fluid are as shown in figure 2. As can be seen from figures 1 and 2, the traditional material receiving box is of a hollow cuboid structure, the bottom parts of two ends of the traditional material receiving box are provided with sewage discharge outlets, and after cutting liquid enters the traditional material receiving box, the cut silicon wafer is not directly contacted with the cutting liquid in the material receiving box. And as the cutting time is increased, the length of the cutting area is increased, and the heat conduction is gradually worsened because the cut silicon wafer is not directly contacted with the cutting liquid in the material receiving box. In addition, the silicon wafers are mutually attracted due to the surface tension of the liquid, so that the probability of generating line marks is high. Meanwhile, the temperature of the silicon wafer is increased under the action of cutting heat, and residual silicon powder has a drying tendency, so that the silicon wafer is easily polluted, and the silicon wafer is difficult to clean. Therefore, although the traditional material receiving box can also achieve the purpose of timely discharging sewage, heat exchange cannot be increased in the crystal silicon cutting process, and the cutting effect is not good.
According to a first aspect of embodiments of the present invention there is provided a pod. Wherein, fig. 3 and fig. 4 respectively show the front view of the material receiving box provided by the embodiment of the invention. As can be seen from fig. 3 and 4, the receiving box may comprise: a shell 10, an overflow baffle 20 and an overflow outlet 40 arranged at least at one side of said shell 10.
In the housing 10, one surface opposite to the bottom of the housing 10 is open so as to receive cutting fluid flowing down from the crystal silicon to be cut. The overflow baffle 20 is fixed at least at one end of the interior of the shell 10, and the height of the overflow baffle 20 is lower than that of the shell 10; the overflow baffle 20 divides the housing 10 into a soaking cavity 21 and an overflow cavity 22, and the overflow cavity 22 is communicated with an overflow outlet 40 and is used for discharging the cutting fluid overflowing the soaking cavity (21) through the overflow outlet (40); the soaking cavity 21 is used for receiving cutting liquid and cutting silicon wafers.
The length of the soaking cavity 21 is greater than that of the crystalline silicon to be cut, and the width of the shell 10 is greater than that of the crystalline silicon to be cut, so that the cut flaky crystalline silicon can be soaked in the soaking cavity 21.
It is worth mentioning that, in the present invention, the housing is a rectangular parallelepiped structure, at least one side of the housing is at least one side surface of the rectangular parallelepiped, and at most four side surfaces, and the side of the housing opposite to the short side of the rectangular parallelepiped is referred to as one end of the housing, and at most two ends are only provided. The overflow baffle 20 is fixed at least one end inside the shell, so that the fluid dispersibility is ensured, the material is saved, the structure is simplified, and if the overflow baffle 20 is arranged on four sides inside the shell, although the overflow is more sufficient, the distances between the lower main roller 8 and the left and right main rollers 7 and 9 shown in fig. 6 are increased, and the cutting effect is influenced.
The height of the overflow baffle 20 is lower than that of the shell 10, so that the cutting fluid in the soaking cavity 21 can overflow to the overflow cavity 22 after reaching the height of the overflow baffle 20, and cannot directly overflow out of the shell, thereby ensuring that the cutting fluid cannot spill on the outer wire mesh 120.
In an alternative embodiment, the receiving box further comprises: and the pollution discharge structure 30 is arranged at the bottom of the shell 10, wherein the pollution discharge structure 30 is communicated with the soaking cavity 21, and the pollution discharge structure 30 is used for discharging the cutting fluid from the bottom of the shell 10.
Further, the soaking chamber 21 and the overflow chamber 22 are communicated with different discharge channels, which can facilitate different post-treatment steps. Because the crystal silicon powder after cutting can subside to steeping chamber 21 bottom, consequently the cutting liquid crystal silicon concentration that flows out from the blowdown structure 30 of steeping chamber 21 intercommunication is higher, and impurity content is also higher, need handle according to the blowdown standard in the practical application process. The concentration of the crystal silicon of the cutting liquid flowing out of the overflow outlet 40 communicated with the overflow cavity 22 is low, and the subsequent post-treatment step is generally not needed.
In an alternative embodiment, the drain structure 30 includes: a waste inlet 31, a waste channel 32 and a waste outlet 33 arranged at the bottom of the housing 10, the waste outlet 33 being arranged at one or both ends of the housing, the waste channel extending towards the end or ends of the housing at which the waste outlet 33 is arranged, as shown in fig. 4 and 5. Wherein, the sewage inlet 31 is arranged at the bottom of the shell 10, and can smoothly discharge the waste cutting fluid containing silicon powder into the sewage channel 32, and the sewage channel 32 is discharged to the sewage outlet 33. In a further preferred embodiment, the sewage inlet 31 may be composed of a plurality of sewage holes, the number and arrangement of the sewage holes are set according to actual needs, for example, the sewage inlet 31 may be set as two rows of sewage holes to better discharge the waste cutting fluid.
Wherein the cross-section of the trapway 32 can be of various shapes, in an alternative embodiment, as shown in fig. 5, the cross-section of the trapway 32 is triangular, that is, two baffles inclined towards the inside of the housing are arranged on the bottom surface of the housing 10, and the bottom surface of the housing 10 and the inclined baffles enclose the trapway with the triangular cross-section, that is, the bottom of the steeping chamber 21 is an inclined surface. The blowdown inlet 31 is arranged on the inclined plane of the blowdown channel 32, the arrangement of the blowdown inlet 31 on the inclined plane can effectively prevent deposited silicon powder from being accumulated at the bottom of the soaking cavity 21, and the silicon powder can be smoothly discharged to the blowdown channel 32 in the process of sliding down along the inclined plane.
In an alternative embodiment, the drain structure 30 further includes: a sewage adjusting plate 34 covering above the sewage inlet 31; a blowdown adjustment plate 34 is detachably connected to the bottom of the housing for adjusting the flow rate of the cutting fluid entering the blowdown inlet 31.
To reduce the silicon powder concentration in the soaking zone due to the silicon powder produced by the cutting, in an alternative embodiment, the blowdown flow holes 34 include a plurality of blowdown flow holes corresponding to the blowdown inlet 31. Under the condition that a plurality of sewage discharging holes are formed in the sewage discharging inlet 31, when the sewage discharging flow hole of the sewage discharging adjusting plate 34 is opposite to the sewage discharging inlet 31, the sewage discharging flow is the largest at the moment, and when the sewage discharging flow hole of the sewage discharging adjusting plate 34 and the sewage discharging inlet 31 are in staggered coverage, the sewage discharging flow changes along with different staggered distances, so that the aim of controlling the sewage discharging flow is fulfilled, as shown in fig. 5. The pollution discharge adjusting plate 34 is connected with the pollution discharge inlet 31 through a bolt and a nut, in a preferred embodiment, an adjusting groove-shaped hole and a pressing bolt are selected, and the effect of staggered covering of the pollution discharge flow hole of the pollution discharge adjusting plate 34 and the pollution discharge inlet 31 is achieved by changing the position of the bolt in the adjusting groove-shaped hole. According to the invention, by controlling the sewage discharge flow, the cutting liquid in the soaking cavity can be ensured to be in an overflowing state all the time, namely, the crystal silicon to be cut can be ensured to be soaked in the cutting liquid all the time, and the purpose of heat exchange is achieved.
In the embodiment of the present invention, the overflow outlet 40 and the soil discharge outlet 33 are disposed at the end of the casing 10, and the cross-section of the end of the casing 10 has a herringbone structure. In a preferred embodiment, the overflow outlet 40 and the blow-off outlet 33 are respectively arranged at both sides of the herringbone structure, i.e. the overflow cutting fluid and the blow-off outlet outflow cutting fluid respectively flow out from both ends of the housing 10. In another preferred embodiment, the herringbone structure is provided with an overflow outlet 40 and a sewage discharge outlet 33 on both sides, and a partition plate 35 is provided between the overflow outlet 40 and the sewage discharge outlet 33, as shown in fig. 2, wherein the arrow direction is the flow direction of the cutting fluid.
Wherein, the cavity thickness of overflow outlet 40 and blowdown export 33 can be set for according to actual flow demand, and in an optional embodiment, the cavity thickness of overflow outlet 40 and blowdown export 33 is 5 ~ 10mm, both can guarantee the smooth outflow of cutting fluid, saves the usable floor area of whole casing 10 simultaneously, can not cause the waste in the cost.
In an alternative embodiment, when the number of the overflow baffles 20 is two, the two overflow baffles 20 are respectively arranged at two ends of the shell 10; two overflow baffles 20 separate an overflow chamber 22 at each end of the housing; the overflow chamber 22 is located at the same end as the communicating overflow outlet 40, as shown in fig. 2. By providing overflow chambers at both ends, it can be ensured that the overflowing cutting fluid does not spill onto the wire mesh 120. In a further preferred embodiment, the height difference between the overflow baffle 20 and the housing 10 is in the range of 10-20 mm (e.g. 11mm, 12mm, 13mm, 14mm, 15mm, 16mm, 17mm, 18mm, 19mm, etc.). If the height of the overflow baffle 20 is too low, the height of the soaking cavity 21 is limited, and the cut crystal silicon can not achieve the purpose of soaking heat exchange; if the height of the overflow baffle 20 is too high, the height difference between the overflow baffle 20 and the housing 10 is too small, and the cutting fluid which is liable to overflow directly flows out of the housing 10 and is sprinkled on the wire mesh 120, so that the height difference between the overflow baffle 20 and the housing 10 needs to be within a range of 10 to 20 mm.
In an alternative embodiment of the present invention, a detachable filter screen 130 is disposed above the pollution discharge adjustment plate 34, and the aperture of the detachable filter screen 130 is 50-300 meshes. The filter screen can intercept the great impurity of granule, and sets up to dismantling, is convenient for regularly take out the clearance piece disintegrating slag.
In an alternative embodiment, one or more ultrasonic transducers 50 are disposed below at least one side of the bottom of the housing 10 and function to increase the energy exchange between the cutting fluid and the cut crystal silicon by means of ultrasonic waves. In a preferred embodiment, the ultrasonic transducers 50 are oriented at a 45 ° angle to the horizontal. Because crystal silicon is vertical slice after the cutting, if ultrasonic transducer sets up perpendicularly in the below, the supersound area is limited only to the crystal silicon downside, consequently is 45 jiaos with ultrasonic transducer 50 setting direction and horizontal direction, can guarantee that the area of supersound is the biggest, covers the side and the bottom surface of crystal silicon simultaneously.
In the present invention, the ultrasonic frequency and the number of the ultrasonic transducers 50 can be determined according to the length of the actual housing 10, in a preferred embodiment, the number of the ultrasonic transducers 50 is 5 to 10, and the ultrasonic frequency of the ultrasonic transducers 50 is 28 to 40 KHz.
In practical application, it is difficult to avoid a small amount of cutting fluid from spilling out of the housing 10, so in an alternative embodiment, a transparent shell may be disposed outside the ultrasonic transducer 50, so as to protect the continuous and stable operation of the ultrasonic transducer 50, and to observe the working condition of the ultrasonic transducer 50, so as to maintain the ultrasonic transducer in time when a problem occurs.
In an alternative embodiment, in order to cooperate with the ultrasonic transducer 50, the present invention provides an acoustic intensity tester 60 between the ultrasonic transducer 50 and the housing 10, and the acoustic intensity of the ultrasonic transducer 50 is monitored by the acoustic intensity tester 60. And an online sound intensity tester is adopted, and the working number of the ultrasonic transducers is adjusted by a PLC (programmable logic controller), so that the working number of the ultrasonic transducers 50 is reduced when the sound intensity is too strong.
It should be noted that, since heat is generated during the operation of the ultrasonic transducer 50, in a preferred embodiment, a low level sensor 221 is further disposed inside the overflow chamber 22 for monitoring the liquid level inside the overflow chamber 22, i.e. the fluid inside the overflow chamber 22 can be determined by the low level sensor 221. Redundancy is taken and the transducer is not operated when the level of the overflowing cutting fluid is lower than the level of the low level sensor 221.
In the invention, the sound intensity tester 60 and the ultrasonic transducer 50 are controlled by the PLC control system, and the PLC control system introduces a microelectronic technology, a computer technology and the like on the basis of a traditional controller, so that the device has the characteristics of strong universality, convenience in use, wide application range, high reliability, strong anti-interference capability, simplicity in programming and the like. The PLC control system can reasonably control the number of the ultrasonic transducers 50 which are started after the sound intensity detector 60 monitors that the sound intensity of the ultrasonic transducers 50 exceeds a set value, so that low noise and running stability of the whole system during running are ensured.
In an alternative embodiment, the material receiving box is made of carbon steel or stainless steel, and the structure is in full welding or partially in a bolt sealing gasket mode. The ultrasonic transducer 5, the low level sensor 221 and other cable connection wires are led out of the material receiving box in a penetrating and sealing mode, and the operation of the main roller and the wire mesh 120 is not affected generally from the position close to the end head.
According to the technical scheme provided by each embodiment, the overflow baffle is additionally arranged in the material receiving box, the inner part of the shell is divided into the overflow cavity and the soaking cavity, so that the cut crystalline silicon part can be soaked in the cutting liquid of the soaking cavity all the time in the cutting process, the heat conduction of the silicon wafer in the cutting process is effectively improved, and the cutting temperature of the cutting part is reduced.
According to a second aspect of embodiments of the present invention, a multi-wire sawing device is provided.
As shown in fig. 6, the multi-wire cutting apparatus provided in the embodiment of the present invention includes: a workbench 70, a left main roller 80, a lower main roller 90, a right main roller 100, a cutting fluid spray pipe 110, a wire mesh 120 and the material receiving box; the material receiving box is arranged below the workbench 70 and above the lower main roller 90, and the open end of the material receiving box faces the workbench 70.
Wherein, the left main roller 80 and the right main roller 100 are symmetrically arranged at two sides of the workbench 70, and the lower main roller 90 is arranged below the workbench 70; the wire net 120 is fitted around the outer sides of the left main roller 80, the lower main roller 90, and the right main roller 100. Through the linkage effect of three main rollers, drive the gauze 120 of cover in three main roller outsides and rotate, and then treat to cut the crystal silicon and cut.
Wherein a cutting fluid spray pipe 110 is provided at least one side of the table 70 for spraying a cutting fluid onto the wire mesh 120. In an alternative embodiment, the cutting fluid nozzles 110 are symmetrically disposed at both sides of the table 70, and are not disposed at a distance from the table 70, so that the cutting fluid sprayed from the cutting fluid nozzles 110 is timely brought into the cutting zone by the wire mesh 120. The cutting fluid nozzles 110 are disposed at both sides of the table 70, so that the spraying area of the cutting fluid can be increased, which helps to reduce the cutting temperature of the cutting area. In a further preferred embodiment, the distance between the cutting fluid spray pipe 110 and the wire mesh 120 is 4-6 mm, the distance between the cutting fluid spray pipe 110 and the crystalline silicon to be cut is 30-50 mm, and the distance between the upper edge of the material receiving box and the wire mesh 120 is 30-40 mm.
In an alternative embodiment, mounting brackets 140 are provided at both ends of the outside of the housing 10, as shown in FIG. 3, for mounting the entire material receiving cassette on the table 70.
Fig. 7 is a flow chart of a manufacturing process of a multi-wire cutting heat dissipation assembly according to a third aspect of the present invention. The preparation process of the multi-wire cutting radiating assembly can comprise the following steps:
step S701: cutting the crystal silicon to be cut, bringing the cutting liquid into a cutting area by the wire mesh 120, and enabling the cutting liquid flowing out from the cutting area to flow into the soaking cavity 21;
in the step, cutting fluid is sprayed on the wire mesh 120 through the cutting fluid spray pipe 110, the wire mesh 120 brings the cutting fluid sprayed on the wire mesh 120 into a cutting area in the process of moving towards the direction with the cut crystalline silicon, a part of the cutting fluid falls into the soaking cavity 21 of the material receiving box under the action of gravity in the gap of the crystalline silicon slices, and the other part of the cutting fluid flows to two ends of the crystalline silicon to be cut along the side surface of the crystalline silicon to be cut and then flows into the soaking cavity 21 of the material receiving box from the two ends.
Step S702: adjusting the flow rate of the cutting fluid sprayed by the cutting fluid spray pipe 110 to enable a part of the cutting fluid flowing out of the cutting area to flow out of the drainage structure 30 at the bottom of the soaking cavity 21, and a part of the cutting fluid to overflow the overflow cavity 22 and flow out of the overflow outlet 40; wherein, the ultrasonic transducer 50 and the sound intensity tester 60 are controlled by a PLC control system.
In this step, as the cutting fluid continuously flows into the soaking cavity 21 of the material receiving box, the cut part of the crystal silicon is immersed and discharged from the overflow cavities 21 at the two ends. When the cutting fluid in the material receiving box does not pass through the low liquid level sensor 221, the ultrasonic transducer 50 and the acoustic energy detector 6 are started, and the starting number of the ultrasonic transducer 50 is controlled through the PLC control system according to the detection value of the acoustic energy detector 6.
In an alternative embodiment, after cutting is complete, both the ultrasonic transducer 50 and the sonic probe 6 are turned off, and the cutting fluid nozzle 110 is turned off. After the cutting fluid in the soaking cavity 21 completely flows out through the sewage discharge outlet 33, the filter screen is cleaned and replaced for the next use.
If improper flow is found during the cutting process, in an alternative embodiment, the cutting operation is resumed after the equipment is shut down and the cutting fluid is completely drained from the drainage outlet 33 at the bottom of the soaking chamber 21, by changing the coverage area of the drainage flow holes and the drainage inlet 31 on the drainage adjusting plate 34.
In an alternative embodiment, the cutting fluid injection flow rate of the cutting fluid nozzle 110, the blowdown flow rate of the blowdown structure 30, and the overflow flow rate of the overflow chamber 22 may have the following relationship: the blowdown flow rate is 20% to 30% of the injection flow rate (e.g., 22%, 24%, 25%, 26%, 28%, etc.), and the overflow flow rate is 70% to 80% of the injection flow rate (e.g., 72%, 74%, 75%, 76%, 78%, etc.).
The following description is given with reference to a specific embodiment.
The cutting fluid spraying injection flow rate of the cutting fluid spraying pipe 110 is 200 liters/minute, the sewage discharge flow rate of the sewage discharge structure 30 is 50 liters/minute, 50 sewage discharge flow rate holes are arranged on the sewage discharge adjusting plate 34, the diameter of each sewage discharge flow rate hole is 8mm, and the corresponding offset between each sewage discharge flow rate hole and the corresponding sewage discharge inlet 31 is 6.05 mm; the overflow flow rate of the overflow chamber 22 is 150L/min, the buffer amount of the overflow chamber 22 does not exceed 0.48L, and the total accommodating capacity of the overflow chamber 22 is 2.4L.
The application provides the following technical scheme:
technical scheme 1. a material receiving box, its characterized in that includes: a housing 10, an overflow baffle 20 and an overflow outlet 40 provided at least at one side of said housing 10, wherein,
in the shell 10, one surface opposite to the bottom of the shell 10 is open;
the overflow baffle 20 is fixed at least at one end inside the shell 10, and the height of the overflow baffle 20 is lower than that of the shell 10;
the overflow baffle 20 separates the housing 10 into a soaking chamber 21 and an overflow chamber 22,
the soaking cavity 21 is used for receiving cutting liquid and cutting silicon wafers;
the overflow cavity 22 is communicated with the overflow outlet 40 and is used for discharging the cutting fluid overflowing the soaking cavity 21 through the overflow outlet 40.
Technical solution 2. the material receiving box according to technical solution 1, characterized in that the material receiving box further comprises: a drainage structure 30 provided at the bottom of the housing 10, wherein,
the drainage structure 30 is communicated with the soaking cavity 21, and the drainage structure 30 is used for draining the cutting fluid from the bottom of the shell 10.
Technical solution 3. the material receiving box according to the technical solution 2, wherein the drain structure 30 includes: a trapway inlet 31, a trapway passage 32, and a trapway outlet 33 disposed at the bottom of the housing 10.
Technical solution 4. the material receiving box according to technical solution 3, wherein the drainage structure 30 further comprises: a sewage adjusting plate 34 covering above the sewage inlet 31;
the pollution discharge adjusting plate 34 is detachably connected to the bottom of the housing, and is used for adjusting the flow of the cutting fluid entering the pollution discharge inlet 31.
The material receiving box according to claim 5 or 3, wherein the overflow outlet 40 and the drain outlet 33 are disposed at an end of the housing 10.
Technical solution 6. the material receiving box according to the technical solution 5, wherein the cross-section of the end of the housing 10 is a herringbone structure;
the overflow outlet 40 and the sewage discharge outlet 33 are respectively arranged at two sides of the herringbone structure;
alternatively, the first and second electrodes may be,
the overflow outlet 40 and the sewage discharge outlet 33 are arranged on two sides of the herringbone structure, and a partition plate 35 is arranged between the overflow outlet 40 and the sewage discharge outlet 33.
Claim 7. the material receiving box according to any one of claims 1 to 6,
in the case where the number of the overflow barriers 20 is two,
the two overflow baffles 20 are respectively arranged at two ends of the shell 10;
the two overflow baffles 20 divide an overflow chamber 22 at both ends of the housing;
the overflow chamber 22 is located at the same end as the overflow outlet 40 to which it communicates.
Technical means 8. the material receiving box according to the technical means 1, characterized in that,
the height difference between the overflow baffle 20 and the shell 10 is within the range of 10-20 mm.
The material receiving box according to claim 9 and claim 4, wherein the blowdown regulating plate 34 includes a plurality of blowdown flow holes, wherein,
the plurality of blowdown flow holes correspond to the blowdown inlet 31.
Claim 10. the material receiving box according to claim 1, wherein,
a detachable filter screen 130 is arranged above the pollution discharge adjusting plate 34, and the aperture of the detachable filter screen 130 is 50-300 meshes.
Claim 11. the material receiving box according to claim 1, wherein,
one or more ultrasonic transducers 50 are disposed below at least one side of the bottom of the housing 10.
Claim 12. the material receiving box according to claim 1, wherein,
a low liquid level sensor 221 is arranged in the overflow cavity 22 and used for monitoring the liquid level condition in the overflow cavity 22.
Claim 13. the material receiving box according to claim 11, wherein,
the arrangement direction of the ultrasonic transducer 50 forms an angle of 45 degrees with the horizontal direction;
and/or the presence of a gas in the gas,
the number of the ultrasonic transducers 50 is 5-10;
and/or the presence of a gas in the gas,
the ultrasonic frequency of the ultrasonic transducer 50 is 28-40 KHz.
Claim 14. the material receiving box according to claim 13, wherein,
an acoustic intensity tester 60 is arranged between the ultrasonic transducer 50 and the shell 10, wherein the acoustic intensity tester 60 and the ultrasonic transducer 50 are both controlled by a PLC control system; the sound intensity tester 60 is used for monitoring the sound intensity of the ultrasonic transducer 50.
Technical solution 15 a multi-wire cutting apparatus, characterized by comprising: a worktable 70, a left main roller 80, a lower main roller 90, a right main roller 100, a cutting fluid spray pipe 110, a wire mesh 120 and the material receiving box of any one of claims 1 to 13;
the left main roller 80 and the right main roller 100 are symmetrically arranged on both sides of the workbench 70, and the lower main roller 90 is arranged below the workbench 70;
the wire mesh 120 is sleeved on the outer sides of the left main roller 80, the lower main roller 90 and the right main roller 100 for a circle;
the cutting fluid spray pipe 110 is arranged on at least one side of the worktable 70 and is used for spraying cutting fluid onto the wire mesh 120;
the material receiving box is arranged below the workbench 70 and above the lower main roller 90, and the open end of the material receiving box faces the workbench 70.
Technical solution 16. a cutting process of the multi-wire cutting apparatus according to the technical solution 15, comprising:
cutting the to-be-cut crystalline silicon, wherein the wire mesh 120 brings cutting liquid into a cutting area, and the cutting liquid flowing out from the cutting area flows into the soaking cavity 21;
and (b) adjusting the flow of the cutting fluid sprayed by the cutting fluid spray pipe 110, so that a part of the cutting fluid flowing out of the cutting area flows out of the drainage structure 30 at the bottom of the soaking cavity 21, and a part of the cutting fluid overflows to the overflow cavity 22 and flows out of the overflow outlet 40.
The above steps are provided only for helping to understand the method, structure and core idea of the present invention. It will be apparent to those skilled in the art that various changes and modifications can be made without departing from the principles of the invention, and these changes and modifications also fall within the scope of the appended claims.

Claims (10)

1. A pod, comprising: a housing (10), an overflow baffle (20) and an overflow outlet (40) arranged at least on one side of the housing (10), wherein,
in the shell (10), one surface opposite to the bottom of the shell (10) is arranged in an open manner;
the overflow baffle (20) is fixed at least at one end of the inner part of the shell (10), and the height of the overflow baffle (20) is lower than that of the shell (10);
the overflow baffle (20) divides the shell (10) into a soaking cavity (21) and an overflow cavity (22),
the soaking cavity (21) is used for receiving cutting liquid and cutting silicon wafers;
the overflow cavity (22) is communicated with the overflow outlet (40) and is used for discharging the cutting fluid overflowing the soaking cavity (21) through the overflow outlet (40).
2. The pod of claim 1, further comprising: a drainage structure (30) arranged at the bottom of the housing (10), wherein,
the pollution discharge structure (30) is communicated with the soaking cavity (21), and the pollution discharge structure (30) is used for discharging the cutting fluid from the bottom of the shell (10).
3. The receiving box according to claim 2, characterized in that said draining structure (30) comprises: a sewage inlet (31), a sewage channel (32) and a sewage outlet (33) which are arranged at the bottom of the shell (10).
4. The receiving box according to claim 3, wherein the draining structure (30) further comprises: a pollution discharge adjusting plate (34) covering the upper part of the pollution discharge inlet (31);
the pollution discharge adjusting plate (34) is detachably connected to the bottom of the shell and used for adjusting the flow of the cutting fluid entering the pollution discharge inlet (31).
5. The receiving box according to claim 3, wherein the overflow outlet (40) and the blowdown outlet (33) are provided at an end of the housing (10).
6. The receiving box according to claim 5, characterized in that the cross section of the end of the casing (10) is of a herringbone structure;
the overflow outlet (40) and the sewage discharge outlet (33) are respectively arranged on two sides of the herringbone structure;
alternatively, the first and second electrodes may be,
the overflow outlet (40) and the sewage discharge outlet (33) are arranged on two sides of the herringbone structure, and a partition plate (35) is arranged between the overflow outlet (40) and the sewage discharge outlet (33).
7. The receiving box according to any one of claims 1 to 6,
when the number of the overflow baffles (20) is two,
the two overflow baffles (20) are respectively arranged at two ends of the shell (10);
the two overflow baffles (20) divide an overflow cavity (22) at two ends of the shell;
the overflow cavity (22) is located at the same end as the overflow outlet (40).
8. The receiving box according to claim 1,
the height difference between the overflow baffle (20) and the shell (10) is within the range of 10-20 mm.
9. A multi-wire sawing apparatus comprising: a workbench (70), a left main roller (80), a lower main roller (90), a right main roller (100), a cutting fluid spray pipe (110), a wire mesh (120) and the material receiving box of any one of claims 1 to 13;
the left main roller (80) and the right main roller (100) are symmetrically arranged on two sides of the workbench (70), and the lower main roller (90) is arranged below the workbench (70);
the wire mesh (120) is sleeved on the outer sides of the left main roller (80), the lower main roller (90) and the right main roller (100) for a circle;
the cutting fluid spray pipe (110) is arranged on at least one side of the workbench (70) and is used for spraying cutting fluid on the wire mesh (120);
the material receiving box is arranged below the workbench (70) and above the lower main roller (90), and the open end of the material receiving box faces the workbench (70).
10. A process for cutting a multi-wire sawing device according to claim 9, comprising:
step (a), cutting the crystalline silicon to be cut, wherein the wire mesh (120) brings cutting liquid into a cutting area, and the cutting liquid flowing out of the cutting area flows into a soaking cavity (21);
and (b) adjusting the flow of the cutting fluid sprayed by the cutting fluid spray pipe (110), so that a part of the cutting fluid flowing out of the cutting area flows out of the sewage discharge structure (30) at the bottom of the soaking cavity (21), and a part of the cutting fluid overflows to the overflow cavity (22) and flows out of the overflow outlet (40).
CN202111226165.7A 2021-10-21 2021-10-21 Material receiving box, multi-wire cutting equipment and cutting process of multi-wire cutting equipment Pending CN113858462A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202111226165.7A CN113858462A (en) 2021-10-21 2021-10-21 Material receiving box, multi-wire cutting equipment and cutting process of multi-wire cutting equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202111226165.7A CN113858462A (en) 2021-10-21 2021-10-21 Material receiving box, multi-wire cutting equipment and cutting process of multi-wire cutting equipment

Publications (1)

Publication Number Publication Date
CN113858462A true CN113858462A (en) 2021-12-31

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Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Link
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114434664A (en) * 2022-03-07 2022-05-06 广东高景太阳能科技有限公司 Device for reducing wire jumper rate of silicon rod cutting and cutting method
CN114851413A (en) * 2022-03-25 2022-08-05 河南科技大学 Connecting piece groove, diamond wire slicing machine and cutting method of large-size silicon rod
CN115283875A (en) * 2022-09-06 2022-11-04 三一集团有限公司 Breakpoint welding method for wire mesh cutting line

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114434664A (en) * 2022-03-07 2022-05-06 广东高景太阳能科技有限公司 Device for reducing wire jumper rate of silicon rod cutting and cutting method
CN114851413A (en) * 2022-03-25 2022-08-05 河南科技大学 Connecting piece groove, diamond wire slicing machine and cutting method of large-size silicon rod
CN115283875A (en) * 2022-09-06 2022-11-04 三一集团有限公司 Breakpoint welding method for wire mesh cutting line
CN115283875B (en) * 2022-09-06 2024-01-23 三一硅能(朔州)有限公司 Breakpoint welding method of wire mesh cutting wire

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