CN113846317A - Ionization chamber, radio frequency ion source and control method thereof - Google Patents
Ionization chamber, radio frequency ion source and control method thereof Download PDFInfo
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- CN113846317A CN113846317A CN202111125541.3A CN202111125541A CN113846317A CN 113846317 A CN113846317 A CN 113846317A CN 202111125541 A CN202111125541 A CN 202111125541A CN 113846317 A CN113846317 A CN 113846317A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/46—Sputtering by ion beam produced by an external ion source
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- Chemical & Material Sciences (AREA)
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- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
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- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Plasma Technology (AREA)
Abstract
The present application relates to an ionization chamber, a radio frequency ion source and a method of controlling the same, the ionization chamber comprising: the bottom is connected with a gas supply pipeline, and the front end of the bottom is provided with a grid mesh of a radio frequency ion source; the gas introduced into the gas supply pipeline is ionized in the ionization chamber under the action of radio frequency electricity to generate plasma; the side wall is also provided with a shielding cover made of a conductive material, and the shielding cover is connected with the positive terminal of a power supply; the shielding cover is used for generating an electric field from the side wall to the center direction in the ionization chamber, the plasma deflects under the action of the electric field, and the emergence position of the plasma from the grid mesh is controlled; the technical scheme can improve the distribution condition of the plasma in the ionization chamber, thereby reducing the serious etching condition of the grid position caused by the uneven distribution of the plasma and prolonging the service life of the grid.
Description
Technical Field
The application relates to the technical field of ion sources, in particular to an ionization chamber, a radio frequency ion source and a control method thereof.
Background
In the field of optical coating, a radio frequency ion source generates plasma through radio frequency ionization, and then the plasma is accelerated through a grid electric field, so that positive ions are accelerated to generate ion beams; the radio frequency ion source ionizes gas through radio frequency, generally the continuous working time can reach more than 1000 hours, and the radio frequency ion source has the advantages of no consumable material, long service time and small heat productivity.
However, in the commonly used radio frequency ion source, the uniformity of ions in the ionization chamber is not good, the periphery of the grid mesh is seriously etched, the service life of the grid mesh is reduced, and the film coating using effect of the radio frequency ion source equipment is influenced.
Disclosure of Invention
Accordingly, it is desirable to provide an ionization chamber, an rf ion source and a control method thereof to improve the lifetime of the grid and enhance the usage of the rf ion source.
An ionization chamber is applied to a radio frequency ion source and comprises a bottom and a side wall, wherein the bottom is connected with a gas supply pipeline, and the front end of the ionization chamber is provided with a grid mesh of the radio frequency ion source; the gas introduced into the gas supply pipeline is ionized in the ionization chamber under the action of radio frequency electricity to generate plasma; the side wall is also provided with a shielding cover made of a conductive material, and the shielding cover is connected with the positive terminal of a power supply;
the shielding cover is used for generating an electric field from the side wall to the center direction in the ionization chamber, the plasma deflects under the action of the electric field, and the emergence position of the plasma from the grid mesh is controlled.
In one embodiment, the shield includes at least one shroud; wherein, each sub-cover ring is respectively connected with a power supply to form an independent unit.
In one embodiment, the ionization chamber is an integrated cavity structure consisting of a bottom and side walls made of quartz material;
the shielding cover is embedded in the side face, or the shielding cover is sleeved outside the side wall, or the shielding cover wraps the inside of the side wall.
In one embodiment, the shielding case forms a side wall of an ionization chamber, and the ionization chamber is formed by the bottom and the shielding case, wherein the bottom is fixedly connected with the shielding case, and the shielding case is connected with the grid in an insulating mode.
In one embodiment, the bottom comprises a circular plate of quartz material and the shield comprises a cylindrical sheet metal part; wherein, the plectane is fixed with the sheet metal component bonding.
In one embodiment, the circular plate and the sheet metal part are fixedly connected together by brazing or screws, and the shielding cover and the grid mesh are insulated and isolated by insulating ceramic.
In one embodiment, the ionization chamber further comprises: and the controller is connected with the power supply and is used for adjusting and controlling the output voltage of the power supply according to the monitoring parameters and adjusting the electric field distribution of the shielding case.
A radio frequency ion source comprises the ionization chamber, an air supply pipeline connected with the bottom of the ionization chamber, a grid mesh arranged at the front end of the ionization chamber, and a radio frequency coil arranged outside the ionization chamber; the radio frequency coil is connected with a radio frequency power supply through a matching network.
The ionization chamber and the radio frequency ion source are provided with a shielding cover connected with the positive terminal of a power supply on the side wall, different parameter potentials are input into the shielding cover, an electric field from the side wall to the center direction is generated in the ionization chamber, and the plasmas are concentrated and offset towards the center of the ionization chamber under the action of the electric field, so that the emergence position of the plasmas from the grid mesh is adjusted; the technical scheme can improve the distribution condition of the plasma in the ionization chamber, thereby reducing the serious etching condition of the grid position caused by the uneven distribution of the plasma and prolonging the service life of the grid.
In addition, different parameter potentials are input through adjusting the shielding cover, so that the size of the plasma covering diameter required by a user is obtained, the coverage is controllable, the use efficiency of the ion source is improved, and the deposition uniformity is better.
Moreover, the ionization chamber is formed by the integrated design of the quartz bottom and the metal shielding cover, so that the complex processing procedures of the quartz chamber are reduced, and the equipment cost of the ion source is reduced.
A method for controlling an rf ion source, comprising:
the controller receives control parameters sent by an industrial personal computer of the film plating machine;
calculating a target voltage according to the control parameters;
controlling the power supply to output the target voltage;
and enabling the shielding cover to generate a corresponding electric field to act on the plasma in the ionization chamber through the target voltage, and controlling the emergent direction of the plasma so as to control the coverage range of the radio frequency ion source.
In one embodiment, the control parameter is film thickness data detected by an industrial personal computer through a film thickness monitoring system of the vacuum coating machine.
According to the control method of the radio frequency ion source, the controller is used for controlling and receiving control parameters such as film thickness data sent by an industrial personal computer of the film plating machine; the shielding cover is controlled to generate a corresponding electric field to act on the plasma in the ionization chamber, and the emergent direction of the plasma is controlled, so that the aim of controlling the coverage area of the radio frequency ion source is fulfilled; according to the technical scheme, on one hand, the distribution condition of the plasma in the ionization chamber can be improved, the etching of the grid due to the uneven distribution of the plasma is reduced, the service life of the grid is prolonged, meanwhile, the coverage of the radio frequency ion source is controllable, the radio frequency ion source is adjusted in real time according to the coating process, and the coating efficiency of the ion source is greatly improved.
Additional aspects and advantages of the present application will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the present application.
Drawings
FIG. 1 is a schematic diagram of the structure of an ionization chamber of one embodiment;
FIG. 2 is a schematic view of the plasma distribution inside a conventional ionization chamber;
FIG. 3 is a schematic view of the plasma distribution inside the ionization chamber of the present application
FIG. 4 is a schematic view of a shield configuration according to one embodiment;
FIG. 5 is a schematic diagram of the structure of an ionization chamber of another embodiment;
FIG. 6 is a schematic structural view of an ionization chamber of yet another embodiment;
FIG. 7 is a schematic view of an ionization chamber according to yet another embodiment;
FIG. 8 is a pictorial illustration of an exemplary ionization chamber;
FIG. 9 is a schematic diagram of an RF ion source;
FIG. 10 is a flow chart of a method of controlling the RF ion source;
FIG. 11 is a graph of coverage diameter versus voltage.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.
The application provides an ionization chamber, the ionization chamber 10 can be applied to a radio frequency ion source, and the space density distribution of plasma of the radio frequency ion source in the ionization chamber 10 is improved; referring to fig. 1, fig. 1 is a schematic structural diagram of an ionization chamber according to an embodiment, which is a cross-sectional view, the ionization chamber 10 includes a bottom 11 and a side wall 12, the bottom 11 is connected to a gas supply duct 20, a grid 30 of a radio frequency ion source is arranged at a front end, and gas introduced into the gas supply duct 20 is ionized in the ionization chamber 10 under the action of radio frequency electricity to generate plasma; a shielding cover 13 made of conductive material is further disposed on the side wall 12 (shown as the outer side of the side wall 12), the shielding cover 13 is connected to the positive terminal of the power source 131, the shielding cover 13 generates an electric field in the ionization chamber 10 from the side wall 12 toward the center, the plasma deflects under the action of the electric field, and the emission position of the plasma from the grid 30 is controlled. Further, the power source 131 is further connected to the controller 132, and is configured to adjust and control an output voltage of the power source 131 according to the monitoring parameter, and adjust the electric field distribution of the shielding case 13.
In the above technical scheme, since the plasma is positively charged, the plasma will be concentrated near the center before passing through the grid 30, so that the plasma distribution in the ionization chamber 10 is more uniform, a large amount of plasma is prevented from impacting the grid 30 from the periphery of the grid 30, and the etching of the grid 30 is reduced.
Further, the controller 132 controls the control parameters sent by the industrial personal computer of the film plating machine to control the shielding cover 13 to generate a corresponding electric field to act on the plasma in the ionization chamber 10, and controls the emergent direction of the plasma, thereby achieving the purpose of controlling the coverage of the radio frequency ion source.
Referring to fig. 2-3, fig. 2 is a schematic view of a plasma distribution inside a conventional ionization chamber, and fig. 3 is a schematic view of a plasma distribution inside an ionization chamber of the present application; as can be seen from fig. 2, a large amount of plasma is concentrated at the peripheral position of the ionization chamber 10 and passes through the edge of the grid 30 densely; in fig. 3, under the effect of the shielding cover 13, part of the plasma is shifted toward the center direction, so that the plasma in the whole ionization chamber 10 is respectively more uniform, and the plasma can penetrate through the grid 30 in a relatively uniform state, thereby reducing the etching on the edge of the grid 30 and delaying the service life of the grid 30.
In one embodiment, as shown in FIG. 4, FIG. 4 is a schematic diagram of a shield configuration of one embodiment; the shielding case 13 may be composed of a plurality of cover rings, for example, two cover rings in the figure, and each sub-cover ring is connected to a power source 131 to form an independent unit; for the power supply 131, different power supplies 131 can be used for supplying power to the cover rings, and different output channels of one power supply 131 can also be used for supplying power; as shown, the cover ring a and the cover ring B are respectively connected to the power supply a and the power supply B, and the controller 132 is connected to the power supply a and the power supply B to respectively control the output voltages thereof to the cover ring a and the cover ring B, so that the distribution state of the plasma in the ionization chamber 10 can be accurately controlled according to the corresponding control scheme, and the coverage of the rf ion source can be controlled.
Referring to fig. 5, fig. 5 is a schematic structural view of an ionization chamber according to another embodiment, and a shield 13 as described in the figure may be provided inside the ionization chamber 10; referring to fig. 6, fig. 6 is a schematic structural view of an ionization chamber according to yet another embodiment, in which a shield 13 may be embedded inside the sidewall 12 of the ionization chamber 10.
As described above, the ionization chamber 10 of the present application may be designed as an integrated cavity structure composed of the bottom 11 and the sidewall 12 made of quartz material; the shielding cover 13 may be sleeved outside the side wall 12 (as shown in fig. 1), wrapped inside the side wall 12 (as shown in fig. 4), or embedded inside the side surface (as shown in fig. 5), and its design structure may be selected according to actual requirements.
In order to reduce the equipment cost of the rf ion source, in an embodiment, referring to fig. 7, fig. 7 is a schematic structural diagram of an ionization chamber of another embodiment, the ionization chamber 10 may directly form the sidewall 12 by the shielding cover 13, accordingly, the ionization chamber 10 is formed by the bottom 11 and the shielding cover 13, the bottom 11 and the shielding cover 13 are fixedly connected, and the shielding cover 13 and the grid 30 are connected in an insulating manner; preferably, the bottom 11 of the ionization chamber 10 may include a circular plate made of quartz material, and the shield 13 includes a cylindrical sheet metal part, and the circular plate is bonded and fixed with the sheet metal part; with respect to the shape of the ionization chamber 10, and with reference to fig. 8, fig. 8 is a schematic illustration of an exemplary ionization chamber, the base 11 and the metal shield 13 are designed as an integral whole. Preferably, the circular plate and the sheet metal part can be connected together by soldering or screw fastening, the shielding case 13 and the grid 30 are insulated and isolated by the insulating ceramic 14, and the power source 131 is connected by the terminal 15 arranged on the shielding case 13.
In the scheme of the embodiment, the ionization chamber is formed by integrally designing the quartz bottom and the metal shielding cover, so that the complex processing procedures of the quartz chamber are reduced, and the equipment cost of the ion source is reduced. In addition, the ionization chamber is composed of a sheet metal part and a circular quartz plate, and the sheet metal part and the circular quartz plate can be matched and fixedly connected together by brazing or screws, so that the problem of difficulty in processing polyhedral quartz is solved, and the problem of ion beam shielding is also solved; and the shielding cover and the grid mesh are separated by the ceramic insulating part, so that the shielding cover can be independently controlled, the parameter setting of the radio frequency ion source is not influenced, and the radio frequency ion source is more flexible.
Embodiments of an rf ion source are provided below.
Referring to fig. 9, fig. 9 is a schematic structural diagram of an rf ion source provided in the present application, the rf ion source includes an ionization chamber 10 according to any of the above embodiments, a housing 50, a gas supply duct 20 connected to a bottom 11 of the ionization chamber 10, a grid 30 disposed at a front end of the ionization chamber 10, and an rf coil 40 disposed outside the ionization chamber 10; wherein the radio frequency coil 40 is connected to a radio frequency power supply 42 via a matching network 41.
Based on the structural design of the ionization chamber, the radio frequency ion source of the embodiment can improve the distribution condition of plasma in the ionization chamber, reduce the serious etching condition of the grid position caused by the uneven distribution of the plasma, and prolong the service life of the grid. Different parameter potentials are input through adjusting the shielding cover, so that the size of the plasma covering diameter required by a user is obtained, the coverage is controllable, the use efficiency of the ion source is improved, and the deposition uniformity is better. The ionization chamber is formed by the integrated design of the quartz bottom and the metal shielding cover, so that the complex processing procedures of the quartz chamber are reduced, and the equipment cost is reduced.
An embodiment of a method of controlling an rf ion source is described below.
The control method of the rf ion source of the present application may be used to control the rf ion source of the above embodiments, referring to fig. 10, where fig. 10 is a flowchart of a control method of the rf ion source, the method mainly includes the following steps:
s1, the controller receives control parameters sent by an industrial personal computer of the film plating machine; for example, the control parameter is film thickness data detected by an industrial personal computer through a film thickness monitoring system of a vacuum coating machine, wherein the film thickness monitoring system can be a crystal control system or an optical control system.
S2, calculating a target voltage according to the control parameters; specifically, the applied target voltage may be calculated to produce the desired electric field according to the control parameter requirements.
And S3, controlling the power supply to output the target voltage.
And S4, enabling the shielding case to generate a corresponding electric field to act on the plasma in the ionization chamber through the target voltage, and controlling the emergent direction of the plasma so as to control the coverage of the radio frequency ion source.
For the coverage adjustment case, referring to fig. 11, fig. 11 is a diagram illustrating the relationship between the coverage diameter and the voltage; as illustrated, the larger the low voltage coverage diameter, the smaller the high voltage coverage diameter; the actual coverage range can be set according to requirements, and the corresponding target voltage is calculated, so that accurate control is realized.
According to the technical scheme of the embodiment, on one hand, the distribution condition of the plasma in the ionization chamber can be improved, the etching of the grid due to the uneven distribution of the plasma is reduced, the service life of the grid is prolonged, meanwhile, the coverage of the radio frequency ion source is controllable, the radio frequency ion source is adjusted in real time according to the coating process, and the coating efficiency of the ion source is greatly improved.
The above-mentioned embodiments only express several embodiments of the present application, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the concept of the present application, which falls within the scope of protection of the present application. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (10)
1. An ionization chamber is applied to a radio frequency ion source and comprises a bottom and a side wall, wherein the bottom is connected with a gas supply pipeline, and the front end of the ionization chamber is provided with a grid mesh of the radio frequency ion source; the gas introduced into the gas supply pipeline is ionized in the ionization chamber under the action of radio frequency electricity to generate plasma; the power supply is characterized in that a shielding cover made of a conductive material is further arranged on the side wall, and the shielding cover is connected with a positive electrode end of a power supply;
the shielding cover is used for generating an electric field from the side wall to the center direction in the ionization chamber, the plasma deflects under the action of the electric field, and the emergence position of the plasma from the grid mesh is controlled.
2. The ionization chamber of claim 1, wherein the shield comprises at least one shield ring; wherein, each sub-cover ring is respectively connected with a power supply to form an independent unit.
3. The ionization chamber of claim 1, wherein the ionization chamber is a unitary cavity structure comprised of a bottom and sidewalls made of quartz material;
the shielding cover is embedded in the side face, or the shielding cover is sleeved outside the side wall, or the shielding cover wraps the inside of the side wall.
4. The ionization chamber of claim 1, wherein the shield forms a sidewall of the ionization chamber, the ionization chamber being formed by the bottom and the shield, wherein the bottom and the shield are fixedly connected, and the shield is connected to the grid in an insulating manner.
5. The ionization chamber of claim 4, wherein the bottom comprises a circular plate of quartz material and the shield comprises a cylindrical sheet metal member; wherein, the plectane is fixed with the sheet metal component bonding.
6. The ionization chamber of claim 5, wherein the circular plate and the sheet metal part are fixedly connected together by brazing or screws, and the shielding case and the grid mesh are insulated and isolated by insulating ceramic.
7. The ionization chamber of any one of claims 1-6, further comprising: and the controller is connected with the power supply and is used for adjusting and controlling the output voltage of the power supply according to the monitoring parameters and adjusting the electric field distribution of the shielding case.
8. A radio frequency ion source, characterized by comprising the ionization chamber of any one of claims 1 to 7, a gas supply pipeline connected with the bottom of the ionization chamber, a grid arranged at the front end of the ionization chamber, and a radio frequency coil arranged outside the ionization chamber; the radio frequency coil is connected with a radio frequency power supply through a matching network.
9. A method of controlling the rf ion source of claim 8, comprising:
the controller receives control parameters sent by an industrial personal computer of the film plating machine;
calculating a target voltage according to the control parameters;
controlling the power supply to output the target voltage;
and enabling the shielding cover to generate a corresponding electric field to act on the plasma in the ionization chamber through the target voltage, and controlling the emergent direction of the plasma so as to control the coverage range of the radio frequency ion source.
10. The method of claim 9, wherein the control parameter is a film thickness data detected by an industrial personal computer through a film thickness monitoring system of a vacuum coater.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111125541.3A CN113846317A (en) | 2021-09-24 | 2021-09-24 | Ionization chamber, radio frequency ion source and control method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202111125541.3A CN113846317A (en) | 2021-09-24 | 2021-09-24 | Ionization chamber, radio frequency ion source and control method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023124182A1 (en) * | 2021-12-31 | 2023-07-06 | 中山市博顿光电科技有限公司 | Radio-frequency ionization device, and radio-frequency neutralizer and control method therefor |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106847661A (en) * | 2017-01-24 | 2017-06-13 | 北京丹华科技发展有限公司 | A kind of plasma source and coating machine |
| CN110996487A (en) * | 2019-11-08 | 2020-04-10 | 上海工程技术大学 | Plasma jet device and method for controlling power supply through feedback link |
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2021
- 2021-09-24 CN CN202111125541.3A patent/CN113846317A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106847661A (en) * | 2017-01-24 | 2017-06-13 | 北京丹华科技发展有限公司 | A kind of plasma source and coating machine |
| CN110996487A (en) * | 2019-11-08 | 2020-04-10 | 上海工程技术大学 | Plasma jet device and method for controlling power supply through feedback link |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023124182A1 (en) * | 2021-12-31 | 2023-07-06 | 中山市博顿光电科技有限公司 | Radio-frequency ionization device, and radio-frequency neutralizer and control method therefor |
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