CN113839162A - Three-dimensional stacked cross-coupled cavity filter based on TSV - Google Patents
Three-dimensional stacked cross-coupled cavity filter based on TSV Download PDFInfo
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- CN113839162A CN113839162A CN202111135048.XA CN202111135048A CN113839162A CN 113839162 A CN113839162 A CN 113839162A CN 202111135048 A CN202111135048 A CN 202111135048A CN 113839162 A CN113839162 A CN 113839162A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 35
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 35
- 239000010703 silicon Substances 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 230000008878 coupling Effects 0.000 claims description 12
- 238000010168 coupling process Methods 0.000 claims description 12
- 238000005859 coupling reaction Methods 0.000 claims description 12
- 230000005540 biological transmission Effects 0.000 abstract description 7
- 238000006880 cross-coupling reaction Methods 0.000 abstract description 5
- 241000724291 Tobacco streak virus Species 0.000 description 18
- 238000005516 engineering process Methods 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 238000004088 simulation Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/207—Hollow waveguide filters
- H01P1/208—Cascaded cavities; Cascaded resonators inside a hollow waveguide structure
- H01P1/2088—Integrated in a substrate
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Abstract
The invention discloses a three-dimensional stacked cross-coupled cavity filter based on TSV (through silicon vias), which comprises a top layer RDL, a middle layer RDL and a bottom layer RDL which are sequentially arranged in parallel from top to bottom, wherein a silicon substrate I is arranged between the top layer RDL and the middle layer RDL, a silicon substrate II is arranged between the middle layer RDL and the bottom layer RDL, and two resonant cavities formed by the TSV are respectively distributed in the silicon substrate I and the silicon substrate II; and the opposite two sides of the top layer RDL are respectively provided with an input RDL port and an output RDL port. The feeder line in the invention adopts the mode of combining the microstrip line and the coplanar waveguide, and generates out-of-band transmission zero by utilizing the cross coupling between the resonant cavities, thereby accelerating the speed of reducing the out-of-band transmission coefficient of the filter and further improving the selectivity of the filter.
Description
Technical Field
The invention belongs to the technical field of three-dimensional integrated circuits, and relates to a three-dimensional stacked cross-coupled cavity filter based on TSV.
Background
SIW filters have been widely used in various practical projects in recent years because of their advantages of high Q value, low loss, small size, easy integration, etc. Meanwhile, with the development of wireless communication systems, W-band filters have been widely paid attention to because of their ultra-wide band resources, and the W-band pass filters play an important role in W-band radio frequency systems, and their structures and performances directly affect the performance of the whole radio frequency system. In rf applications where the W-band is more delicate, the size and performance of the filter are more demanding. Therefore, the realization of the W-band-pass filter which is smaller in size, higher in performance and easier to integrate based on the existing technical means has important significance. In the W band, the main implementation of the bandpass filter is a metal rectangular waveguide. The traditional waveguide filter has the advantages of high quality factor, small insertion loss and mature process. However, the disadvantages of large size, weight, and difficulty of integration are not applicable in higher rf applications.
Disclosure of Invention
The invention aims to provide a TSV (through silicon via) -based three-dimensional stacked cross-coupled cavity filter, wherein a feeder line in the filter adopts a mode of combining a microstrip line and a coplanar waveguide, and an out-of-band transmission zero point is generated by utilizing cross coupling between resonant cavities, so that the speed of reducing the out-of-band transmission coefficient of the filter is increased, and the selectivity of the filter is improved.
The technical scheme adopted by the invention is that the three-dimensional stacked cross-coupled cavity filter based on the TSV comprises a top layer RDL, a middle layer RDL and a bottom layer RDL which are sequentially arranged in parallel from top to bottom, wherein a silicon substrate I is arranged between the top layer RDL and the middle layer RDL, a silicon substrate II is arranged between the middle layer RDL and the bottom layer RDL, and two resonant cavities formed by the TSV are respectively distributed in the silicon substrate I and the silicon substrate II; and the opposite two sides of the top layer RDL are respectively provided with an input RDL port and an output RDL port.
The invention is also characterized in that:
the two resonant cavities distributed in the silicon substrate I are respectively a first resonant cavity and a second resonant cavity, and the two resonant cavities distributed in the silicon substrate II are respectively a third resonant cavity and a fourth resonant cavity; an inductance positive coupling structure is adopted between the first resonant cavity and the second resonant cavity and between the third resonant cavity and the fourth resonant cavity;
and a capacitance negative coupling structure is adopted between the first resonant cavity and the third resonant cavity and between the second resonant cavity and the fourth resonant cavity.
The coupling structure between the input RDL port and the first resonant cavity is the same as that between the output RDL port and the second resonant cavity, and both the input RDL port and the first resonant cavity adopt a mode of combining a microstrip line and a coplanar waveguide for feeding.
Coplanar waveguide grooves are respectively arranged on two opposite sides of the input RDL port and two opposite sides of the output RDL port.
The first resonant cavity and the second resonant cavity are symmetrically arranged in the silicon substrate I; and the third resonant cavity and the fourth resonant cavity are symmetrically arranged in the silicon substrate II.
The invention has the beneficial effects that: according to the three-dimensional stacked cross-coupled cavity filter based on the TSV, a stacked form is adopted, and compared with a cavity filter with a planar structure, the area of a chip is saved. The feeder line adopts a mode of combining a microstrip line and a coplanar waveguide, and generates an out-of-band transmission zero point by utilizing a cross-coupling structure, and the out-of-band rejection capability is strong. And the bandwidth is narrower, and the selectivity is better. And compared with the planar cavity filter, the insertion loss and the return loss are reduced. By combining the TSV technology and the substrate integrated waveguide technology, the W-band-pass filter which is smaller in size, higher in performance and easier to integrate is achieved. The filter has the advantages of excellent performance, compact structure, small size and easy integration with other devices of a radio frequency system.
Drawings
Fig. 1 is a perspective view of a three-dimensional stacked cross-coupled cavity filter based on TSVs according to the present invention;
fig. 2 is a top view of a three-dimensional stacked cross-coupled cavity filter based on TSVs, viewed from the top to the bottom according to the present invention;
fig. 3 is a top view of a three-dimensional stacked cross-coupled filter based on TSVs according to the present invention from bottom to top;
FIG. 4 is a front view of a three-dimensional stacked cross-coupled cavity filter based on TSVs according to the present invention;
fig. 5 is a final simulation curve of S-parameters of a three-dimensional stacked cross-coupled cavity filter based on TSVs in HFSS (High Frequency Structure simulation).
In the figure, 1 is an input RDL port, 2 is an output RDL port, 3 is a central opening I, 4 is a central opening II, 5 is a first resonant cavity, 6 is a second resonant cavity, 7 is a coplanar waveguide groove, 8 is a top RDL, 9 is a silicon substrate I, 10 is a bottom RDL, 11 is a TSV, 12 is an intermediate RDL, 13 is a silicon substrate II, 14 is a third resonant cavity, and 15 is a fourth resonant cavity.
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings and specific embodiments.
The invention discloses a TSV (through silicon via) -based three-dimensional stacked cross-coupled cavity filter, which comprises a top layer RDL (RDL is a rewiring layer) 8, a bottom layer RDL10 and a middle layer RDL12 which are arranged in parallel, wherein the top layer RDL8, the bottom layer RDL10 and the middle layer RDL12 are made of copper, and the top layer RDL8 and the bottom layer RDL10 correspond to high-level and low-level areas in a filter circuit respectively. TSV (through silicon via) technology is adopted among the top layer RDL8, the middle layer RDL12, the bottom layer RDL10 and the middle layer RDL12, and an input RDL port 1 and an output RDL port 2 are respectively arranged on two opposite sides of the top layer RDL 8; the filter is of a fourth-order structure and is provided with four resonant cavities, namely a first resonant cavity 5, a second resonant cavity 6, a third resonant cavity 14 and a fourth resonant cavity 15; a silicon substrate I9 is arranged between the top layer RDL8 and the middle layer RDL 12. 2 resonant cavities consisting of TSV are distributed in the silicon substrate I9; a silicon substrate II13 is arranged between the middle layer RDL12 and the bottom layer RDL10, and another two resonant cavities are arranged in the silicon substrate II 13. And an inductive positive coupling structure is sequentially adopted between two resonant cavities in the same silicon substrate, and a capacitive negative coupling structure is adopted between the resonant cavities in different silicon substrates. The coupling structure between the input RDL port 1 and the first resonant cavity 5 is the same as that between the output RDL port 2 and the second resonant cavity 6, and both feed in a mode of combining a microstrip line and a coplanar waveguide. Coplanar waveguide grooves 7 are respectively arranged on two opposite sides of the input RDL port 1 and two opposite sides of the output RDL port 2. The resonators located in different silicon substrates are apertured with intermediate layer RDL12 to create negative coupling and thereby create transmission zeros out of band. The middle layer RDL12 is respectively provided with a central opening I3 and a central opening II 4; the fourth-order filter is symmetrical in structure, the input RDL ports 1 and the output RDL ports 2 are in one-to-one correspondence, the first resonant cavity 5 is symmetrical to the second resonant cavity 6, and the third resonant cavity 14 is symmetrical to the fourth resonant cavity 15.
The invention relates to a TSV (through silicon via) -based three-dimensional stacked cross-coupled cavity filter, which adopts RDL (remote data link) structures of an upper copper layer and a lower copper layer as high and low level areas of a filter circuit respectively to generate negative coupling for punching a middle layer; and the TSV arrangement is adopted between the upper RDL8 and the middle RDL12, and the coupling between the resonant cavities is realized together with the TSV arrangement structure between the middle RDL12 and the lower RDL 10.
In fig. 2, in the region I, a total of 15 TSVs 11 from left to right form the upper side arms of the first resonant cavity 5 and the second resonant cavity 6 in sequence; in the region II, 7 TSVs 11 from top to bottom form the right side arm of the second resonant cavity 6, and in the region III, 15 TSVs 11 from left to right form the lower side arms 6 of the first resonant cavity 5 and the second resonant cavity; in the region IV, a total of 7 TSVs 11 from top to bottom sequentially form a left side arm of the first resonant cavity 5; in the region V, 6 TSVs 11 from top to bottom form a common edge of the first resonant cavity 5 and the second resonant cavity 6;
in fig. 3, in region VI, a total of 13 TSVs 11 from left to right constitute the upper arms of the third resonant cavity 14 and the fourth resonant cavity 15; in the region VII, seven TSVs 11 form a left side arm of the third resonant cavity 14 from top to bottom; in the region viii, a total of 13 TSVs 11 from left to right constitute a lower arm of the third resonant cavity 14 (lower arm) and a lower arm of the fourth resonant cavity 15 (upper arm); in the region IX, a total of 7 TSVs 11 form a right side arm of the fourth resonant cavity 15 from top to bottom; in region X, four TSVs 11 from top to bottom form common sides of the third cavity 14 and the fourth cavity 15.
The size of input RDL port 1 is: the length is 192 μm and the width is 50 μm.
The dimensions of TSV11 are: diameter 20 μm and height 100. mu.m.
The dimensions of the upper layer RDL8 were: 1148.4 μm long, 702.8 μm wide and 5 μm thick.
The dimensions of the lower layer RDL10 were: 1242.8 μm long, 702.8 μm wide and 0.5 μm thick.
The dimensions of the middle layer RDL12 were: 1242.8um long, 702.8um wide and 0.5um thick.
And adjacent resonant cavities are magnetically coupled through the windows, and are electrically coupled through the grooves beside the feeder lines and the openings of the intermediate layer RDL.
And the distance between two adjacent resonant cavities is the distance of the central axes of the TSV at two sides. The distance of the window between two adjacent resonant cavities is the distance of the central axes of two TSVs in the middle of the collinear position.
Examples
The window between the first resonator 5 and the second resonator 6 is: and in the 6 TSVs of the V region, the region between the 3 rd TSV and the 4 th TSV is from top to bottom.
The window between the third resonant cavity 14 and the fourth resonant cavity 15 is: the area between the 2 nd TSV and the 3 rd TSV from the top to the bottom of the 4 TSVs in the X area;
the dimensions of the first resonant cavity 5 are: 554.4 μm long and 178.2 μm wide.
The dimensions of the second cavity 6 are: 554.4 μm long and 178.2 μm wide.
The dimensions of the third resonant cavity 14 are: 554.4 μm in length and 198 μm in width.
The dimensions of the fourth cavity 15 are: 554.4 μm long and 198 μm wide.
The window distance between the first resonant cavity 1 and the second resonant cavity 2 is 160 μm.
The window distance between the second resonant cavity 3 and the third resonant cavity 4 is 240 μm.
The four coplanar waveguide slot 11 notches have the same size and are: the length is 40 μm and the width is 20 μm.
The feeder line adopts a mode of combining a microstrip line and a coplanar waveguide, and a three-dimensional stacking structure saves the chip area, and improves the out-of-band rejection performance by adopting cross coupling.
The abscissa of fig. 5 represents frequency and the ordinate represents S-parameter, and it can be seen from fig. 5 that at a center frequency of 107GHZ, the insertion loss is-1.58 dB, the 3dB bandwidth is 3GHZ, the return loss is greater than 20dB, and the out-of-band rejection is greater than 25dB at a center frequency ± 5 GHZ. And at 104GHz, an out-of-band transmission zero is generated.
The three-dimensional stacked cross-coupled cavity filter based on the TSV is characterized in that the high-performance band-pass filter which meets requirements better is realized by combining a Substrate Integrated Waveguide (SIW) structure and a Through Silicon Via (TSV) technology, and frequency spectrum resources are reasonably utilized. The invention realizes a four-order cross coupling filter by utilizing the SIW filter based on the TSV. Compared with other filters, the filter designed by the invention has the characteristics of excellent performance, compact structure, small size and easy integration with other devices of a radio frequency system.
Claims (5)
1. The three-dimensional stacked cross-coupled cavity filter based on the TSV is characterized in that: the dielectric resonator comprises a top layer RDL, a middle layer RDL and a bottom layer RDL which are sequentially arranged in parallel from top to bottom, wherein a silicon substrate I is arranged between the top layer RDL and the middle layer RDL, a silicon substrate II is arranged between the middle layer RDL and the bottom layer RDL, and two resonant cavities formed by TSV are respectively distributed in the silicon substrate I and the silicon substrate II; and the opposite two sides of the top layer RDL are respectively provided with an input RDL port and an output RDL port.
2. The three-dimensional stacked cross-coupled cavity filter based on TSV according to claim 1, wherein: the two resonant cavities distributed in the silicon substrate I are respectively a first resonant cavity and a second resonant cavity, and the two resonant cavities distributed in the silicon substrate II are respectively a third resonant cavity and a fourth resonant cavity; an inductance positive coupling structure is adopted between the first resonant cavity and the second resonant cavity and between the third resonant cavity and the fourth resonant cavity;
and a capacitance negative coupling structure is adopted between the first resonant cavity and the third resonant cavity and between the second resonant cavity and the fourth resonant cavity.
3. The three-dimensional stacked cross-coupled cavity filter based on TSV according to claim 2, wherein: the coupling structure between the input RDL port and the first resonant cavity is the same as that between the output RDL port and the second resonant cavity, and both the input RDL port and the first resonant cavity adopt a mode of combining a microstrip line and a coplanar waveguide for feeding.
4. The TSV-based three-dimensional stacked cross-coupled cavity filter of claim 3, wherein: coplanar waveguide grooves are respectively formed in the two opposite sides of the input RDL port and the two opposite sides of the output RDL port.
5. The TSV-based three-dimensional stacked cross-coupled cavity filter of claim 4, wherein: the first resonant cavity and the second resonant cavity are symmetrically arranged in the silicon substrate I; and the third resonant cavity and the fourth resonant cavity are symmetrically arranged in the silicon substrate II.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202111135048.XA CN113839162A (en) | 2021-09-27 | 2021-09-27 | Three-dimensional stacked cross-coupled cavity filter based on TSV |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202111135048.XA CN113839162A (en) | 2021-09-27 | 2021-09-27 | Three-dimensional stacked cross-coupled cavity filter based on TSV |
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| CN113839162A true CN113839162A (en) | 2021-12-24 |
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Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106025464A (en) * | 2016-06-03 | 2016-10-12 | 电子科技大学 | Substrate integrated waveguide-type cavity filter |
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- 2021-09-27 CN CN202111135048.XA patent/CN113839162A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106025464A (en) * | 2016-06-03 | 2016-10-12 | 电子科技大学 | Substrate integrated waveguide-type cavity filter |
Non-Patent Citations (1)
| Title |
|---|
| 王松松: ""基于TSV的微波滤波器设计"", 《中国优秀硕士学位论文全文数据库（电子期刊）》 * |
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