CN113838942A - Ultralow noise photoelectric detector - Google Patents
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- CN113838942A CN113838942A CN202110893871.0A CN202110893871A CN113838942A CN 113838942 A CN113838942 A CN 113838942A CN 202110893871 A CN202110893871 A CN 202110893871A CN 113838942 A CN113838942 A CN 113838942A
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Abstract
The embodiment of the application provides an ultralow-noise photoelectric detector. The ultra-low noise photoelectric detector comprises a detector body and an ultra-surface micro-nano structure, wherein the ultra-surface micro-nano structure is coupled with a photosensitive surface of the detector body and is used for converting a large light spot size of target incident light into a small light spot size matched with the photosensitive surface of the detector body. According to the scheme provided by the embodiment of the application, the size of target incident light is reduced through the super-surface micro-nano structure, so that the volume of an electric field in a detector is reduced, and therefore, noise can be greatly reduced on the premise of ensuring the flux of the incident light. Due to the small size and light weight of the super-surface micro-nano structure, the integration with other semiconductor optoelectronic devices can be very conveniently realized.
Description
Technical Field
The application relates to the technical field of semiconductor optoelectronic devices, in particular to an ultra-low noise photoelectric detector.
Background
The semiconductor photoelectric detector is a key component for converting optical signals into electric signals in an information system due to the advantages of high efficiency, small volume, strong impact resistance and the like. The performance of the system directly affects the whole detection system. The sensitivity is a core technical index for measuring the photoelectric detector and marks the minimum optical power which can be measured. Therefore, a low-noise photodetector is important in order to avoid its being annihilated by noise signals. Therefore, it is necessary to develop a low noise photodetector.
The noise source of the photodetector is complex, and dark current is generally used to measure the noise of the photodetector. The dark current is positively correlated with the photosensitive area of the photodetector, and noise can be reduced by reducing the photosensitive area. However, reducing the photosensitive area also reduces the light collection efficiency, resulting in a reduction in the overall detection efficiency of the system. In the related art, an external focusing device is provided in a photodetector to focus incident light, so that noise of the photodetector can be reduced on the basis of ensuring light collection efficiency. However, the external focusing device uses a large number of lenses, and has the problems of large volume, heavy weight and difficulty in integrating with other optoelectronic devices.
Disclosure of Invention
An object of the embodiment of this application is to provide an ultra-low noise photoelectric detector, through with the super surface micro-structure integration of light beam size transform function, under the prerequisite of guaranteeing incident luminous flux, realize ultra-low noise photoelectric detection to solve the outside focusing device that current semiconductor photoelectric detector adopted and have bulky, heavy, be difficult to with the integrated problem of other optoelectronic devices. The specific technical scheme is as follows:
the embodiment of the application provides an ultralow noise photoelectric detector, includes:
a probe body;
the super-surface micro-nano structure is coupled with the photosensitive surface of the detector body and used for converting the large light spot size of target incident light into a small light spot size matched with the photosensitive surface of the detector body.
According to the scheme provided by the embodiment of the application, the size of target incident light is reduced through the super-surface micro-nano structure, so that the volume of an electric field in a detector is reduced, and therefore, noise can be greatly reduced on the premise of ensuring the flux of the incident light. Due to the small size and light weight of the super-surface micro-nano structure, the integration with other optoelectronic devices can be very conveniently realized.
In some embodiments of the present application, the super-surface micro-nano structure includes:
the top mirror and the bottom mirror are arranged at intervals; the top mirror is used for focusing the target incident light to the focal point of the top mirror by performing phase modulation on the target incident light;
the bottom mirror is coupled with the photosensitive surface of the detector body and used for collimating and emitting the focused target incident light to the photosensitive surface by performing phase demodulation on the target incident light.
In some embodiments of the present application, the top mirror and the bottom mirror are separated by a preset distance equal to the sum of the focal length of the bottom mirror and the focal length of the top mirror;
the diameter of the top mirror is larger than that of the bottom mirror, and the diameter of the bottom mirror is the same as that of the photosensitive surface; the ratio of the diameter of the top mirror to the diameter of the bottom mirror is equal to the ratio of the focal length of the top mirror to the focal length of the bottom mirror;
the numerical apertures of the top mirror and the bottom mirror are the same.
In some embodiments of the present application, the top mirror and the bottom mirror each comprise a plurality of nanopillars arranged in a multi-layer concentric annular array.
In some embodiments of the present application, the heights of the plurality of nanopillars are the same, and the height ranges from 400nm to 1000 nm;
the radiuses of the nano columns are sequentially reduced from the center of the annular array to the outside, and the value range of the radiuses is 50 nm-95 nm.
In some embodiments of the present application, the top mirror and the bottom mirror satisfy a target phase
Wherein,
x and y are the coordinates of the circle center of the nano-column on the top mirror or the bottom mirror; f is the focal length of the top mirror or the bottom mirror; λ is the wavelength of the target incident light.
In some embodiments of the present application, the super-surface micro-nano structure further includes: a transparent support layer;
the transparent support layer is disposed between the top mirror and the bottom mirror; the thickness of the transparent support layer is equal to the preset distance.
In some embodiments of the present application, the transparent support layer is a quartz layer, SiO2A layer, a SiN layer, a GaO layer, or a sapphire layer.
In some embodiments of the present application, the super-surface micro-nano structure further includes: a connecting layer;
the bottom mirror is coupled with the photosensitive surface of the detector body through the connecting layer.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art that other embodiments can be obtained by using the drawings without creative efforts.
Fig. 1 is a schematic structural diagram of an ultra-low noise photodetector provided in an embodiment of the present application;
FIG. 2 is a diagram of an x-z plane electric field distribution of an ultra-low noise photodetector provided by an embodiment of the present application;
fig. 3 is an enlarged view of an electric field of the ultra-surface micro-nano structure of the ultra-low noise photodetector provided in the embodiment of the present application at a junction with a detector body in an x-z plane.
The reference numerals in the drawings are explained as follows:
1-a probe body;
2-super surface micro-nano structure, 21-top mirror, 22-transparent supporting layer, 23-bottom mirror, 24-connecting layer.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments.
In order to solve the problems that an external focusing device adopted by the conventional semiconductor photoelectric detector is large in size, heavy and difficult to integrate with other optoelectronic devices, the embodiment of the application provides an ultralow-noise photoelectric detector. By integrating with the super-surface microstructure with the beam size conversion function, the ultra-low noise photoelectric detection is realized on the premise of ensuring the incident light flux.
As shown in fig. 1, an ultra-low noise photodetector provided in an embodiment of the present application includes a detector body 1 and a super-surface micro-nano structure 2.
The super-surface micro-nano structure 2 is coupled with the photosensitive surface of the detector body 1 and used for converting the large light spot size of target incident light into a small light spot size matched with the photosensitive surface of the detector body 1.
In fig. 1, the direction indicated by the arrow is the propagation direction of the target incident light. In the embodiment of the present application, the probe body 1 may be a semiconductor probe. The material of the detector body 1 can be Si, GaN, SiC, InGaAs, InP, GaO, GaAs, graphene, MnS2And the like. The electrical structure of the detector body 1 may be a pn junction, PIN, avalanche, schottky, photovoltaic or photoconductive type structure, etc. The detector body 1 can adopt a preparation structure with the same surface, different surfaces and the like.
According to the scheme provided by the embodiment of the application, the size of target incident light is reduced through the super-surface micro-nano structure 2, so that the volume of an electric field in a detector is reduced, and therefore, noise can be greatly reduced on the premise of ensuring the flux of the incident light. Due to the small size and light weight of the super-surface micro-nano structure 2, the integration with other optoelectronic devices can be very conveniently realized.
In some embodiments of the present application, as shown in fig. 1, the super-surface micro-nano structure 2 includes a top mirror 21 and a bottom mirror 23 arranged at intervals. The top mirror 21 is used for focusing the target incident light to the focal point of the top mirror 21 by performing phase modulation on the target incident light; the bottom mirror 23 is coupled to the photosensitive surface of the detector body 1, and is configured to collimate and emit the focused target incident light onto the photosensitive surface by performing phase demodulation on the target incident light.
It should be noted that the super-surface micro-nano structure 2 as a secondary wave source radiates different phases, so as to excite spherical waves with different radii and form a new electromagnetic wave front. In the ultralow noise photoelectric detector provided by the embodiment of the application, target incident light irradiates the top mirror 21, and then converges to a focus through the phase modulation of the top mirror 21, and then continuously diverges to spherical waves, the spherical waves are demodulated to plane waves through the bottom mirror 23 and emitted, and the incident light is focused and collimated through the top mirror 21 and the bottom mirror 23 successively, so that the size of the light beam is reduced according to the focal length proportion.
Because the electric field volume can reduce along with the spot size reduction of incidenting in the detector, consequently, the ultralow noise photoelectric detector that this application embodiment provided can effectively reduce device noise through reducing spot size.
In some embodiments of the present application, in order to keep the target incident light exiting in parallel, as shown in fig. 1, the top mirror 21 and the bottom mirror 23 are spaced apart by a preset distance equal to the sum of the focal length of the bottom mirror 23 and the focal length of the top mirror 21. The diameter of the top mirror 21 is larger than that of the bottom mirror 23, and the diameter of the bottom mirror 23 is the same as that of the light inlet end; the ratio of the diameter of the top mirror 21 to the diameter of the bottom mirror 23 is equal to the ratio of the focal length of the top mirror 21 to the focal length of the bottom mirror 23; the numerical apertures of the top mirror 21 and the bottom mirror 23 are the same.
In some embodiments of the present application, the top mirror 21 and the bottom mirror 23 each comprise a plurality of nanopillars arranged in a multi-layer concentric annular array.
Because the ultra-low noise photodetector provided by the embodiment of the present application is generally polarization independent, the nanopillar in the embodiment of the present application is in a symmetrical shape, for example, a cylindrical structure with a circular or rectangular cross section may be adopted. When the polarization is related, the cross section of the nano-pillar can be in a shape which is not any axisymmetric, such as a rectangle, an ellipse and the like.
In some embodiments of the present application, the heights of the plurality of nanopillars are the same, and the heights range from 400nm to 1000 nm. The radiuses of the nano columns are sequentially reduced from the center of the annular array to the outside, and the value range of the radiuses is 50 nm-95 nm.
It should be noted that, due to the multi-dipole interference, the forward scattered light is cancelled, the transmittance curve may have a valley, and a large amount of resonance may cause a sudden change in the phase curve. Thus, the nanopillar height of the top mirror 21 and the bottom mirror 23 may be 400nm to 1000nm with a radius range of 50nm to 95 nm.
In some embodiments of the present application, the top mirror 21 and the bottom mirror 23 meet the target phase in order to achieve focusing of the top mirror 21 and collimation of the bottom mirror 23
Wherein,
x and y are the coordinates of the center of a circle of the nano-column on the top mirror 21 or the bottom mirror 23;
f is the focal length of the top mirror 21 or the bottom mirror 23;
λ is the wavelength of the target incident light.
The above condition is a phase condition that must be satisfied by the lens to achieve focusing, that is, all light rays generate constructive interference at the focal point.
The phase distribution on the top mirror 21 or the bottom mirror 23 is
The rays interfering constructively at the focus, i.e.
Considering only the relative phase:
thus, can obtain
In some embodiments of the present application, as shown in fig. 1, the super-surface micro-nano structure 2 further comprises a transparent support layer 22. A transparent support layer 22 is disposed between the top mirror 21 and the bottom mirror 23; the thickness of the transparent support layer 22 is equal to a predetermined distance.
By arranging the transparent support layer 22, the embodiment of the application can use the transparent support layer 22 as a support basis, and the top mirror 21 and the bottom mirror 23 with periodically arranged nano-columns are conveniently generated on two sides of the transparent support layer 22 respectively.
In some embodiments of the present application, the transparent support layer 22 is a quartz layer, SiO2A layer, a SiN layer, a GaO layer, or a sapphire layer.
In some embodiments of the present application, as shown in fig. 1, the super-surface micro-nano structure 2 further includes: a connecting layer 24. The bottom mirror 23 is coupled to the photosensitive surface of the detector body 1 via a connecting layer 24.
The embodiment of the application can realize the coupling of the photosensitive surface of the detector body 1 of the bottom mirror 23 through the connecting layer 24.
In some embodiments of the present application, the connecting layer 24 is SiO2A layer, a layer of clear glue or a layer of metallic copper.
The ultra-low noise photodetector provided in the embodiment of the present application can be prepared by growing high refractive index thin films such as polysilicon on the front and back surfaces of the transparent support layer 22 by a CVD (Chemical Vapor Deposition) method, and then respectively generating the top mirror 21 and the bottom mirror 23 having the periodically arranged nano-pillars by photolithography and etching processes.
In order to better understand the ultra-low noise photodetector provided by the present application, a specific method for manufacturing the ultra-low noise photodetector is described below, and the electric field distribution of the ultra-low noise photodetector manufactured by the method is simulated.
In the ultra-low noise photodetector, as shown in FIG. 1, the diameter D of the top mirror 211Is 40 μm, focal length f 140 μm, diameter D of the bottom mirror 232Is 10 μm, focal length f 210 μm, and the numerical apertures of both the top mirror 21 and the bottom mirror 23 are 0.65. The preparation method of the ultralow-noise photoelectric detector comprises the following steps:
step 3, forming TiO on the front surface and the back surface of the transparent supporting layer 22 respectively through electron beam lithography and dry etching2And the super-surface micro-nano structure 2 is a top mirror 21 and a bottom mirror 23 in which nano columns are periodically arranged. The size of the bottom mirror 23 is equal to the size of the light sensitive surface of the detector body 1.
And 4, forming a bonding structure between the detector body 1 and the bottom mirror 23 in a transparent adhesive tape or Cu-Cu bonding mode.
The results of the simulation of the ultra-low noise photodetector using finite time domain difference software FDTD Solutions are shown in fig. 2 and 3. Fig. 2 is a simulation result of an electric field distribution diagram of the ultra-low noise photodetector in an x-z plane, and fig. 3 is an electric field amplification schematic diagram of the ultra-surface micro-nano structure 2 in the ultra-low noise photodetector, which is at the x-z plane where the ultra-surface micro-nano structure 2 is connected with the detector body 1, that is, the electric field distribution diagram at the position of a dashed frame in fig. 2. Where the x-z plane is a plane perpendicular to the surface of the top mirror 21 or the bottom mirror 23. The horizontal axis x and the left vertical axis z represent the position coordinates of the structures of the respective portions of the ultra-low noise photodetector, and the numerical value of the right vertical axis (Color bar, Color column) represents the normalized electric field magnitude.
It can be seen from the figure that the incident light passes through the top mirror 21 and the bottom mirror 23, and after undergoing vertical incidence, the incident light is focused, then diverged and then collimated to exit, and meanwhile, the size of the emergent light spot is well matched with that of the bottom mirror 23, so that the purpose of reducing the diameter of the light beam is achieved. According to simulation results, the ultralow-noise photoelectric detector provided by the embodiment of the application can greatly reduce noise on the premise of ensuring the incident light flux.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
All the embodiments in the present specification are described in a related manner, and the same and similar parts among the embodiments may be referred to each other, and each embodiment focuses on the differences from the other embodiments.
The above description is only for the preferred embodiment of the present application, and is not intended to limit the scope of the present application. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application are included in the protection scope of the present application.
Claims (9)
1. An ultra-low noise photodetector, comprising:
a probe body (1);
the super-surface micro-nano structure (2) is coupled with the photosensitive surface of the detector body (1) and used for converting the large light spot size of target incident light into a small light spot size matched with the photosensitive surface of the detector body (1).
2. Ultra low noise photodetector according to claim 1, characterized in that said ultra-surface micro-nano-structure (2) comprises:
a top mirror (21) and a bottom mirror (23) which are arranged at intervals; the top mirror (21) is used for focusing the target incident light to a focal point of the top mirror (21) by performing phase modulation on the target incident light;
the bottom mirror (23) is coupled with a photosensitive surface of the detector body (1) and used for collimating and emitting the focused target incident light to the photosensitive surface by performing phase demodulation on the target incident light.
3. Ultra low noise photodetector according to claim 2, characterized in that said top mirror (21) and said bottom mirror (23) are separated by a preset distance equal to the sum of the focal length of said bottom mirror (23) and the focal length of said top mirror (21);
the diameter of the top mirror (21) is larger than that of the bottom mirror (23), and the diameter of the bottom mirror (23) is the same as that of the photosensitive surface; the ratio of the diameter of the top mirror (21) to the diameter of the bottom mirror (23) is equal to the ratio of the focal length of the top mirror (21) to the focal length of the bottom mirror (23);
the numerical apertures of the top mirror (21) and the bottom mirror (23) are the same.
4. Ultra low noise photodetector according to claim 3, characterized in that said top mirror (21) and bottom mirror (23) each comprise a plurality of nanopillars arranged in a multilayer concentric annular array.
5. The ultra-low noise photodetector of claim 4, wherein the heights of the plurality of nanopillars are the same, and the range of the heights is 400nm to 1000 nm;
the radiuses of the nano columns are sequentially reduced from the center of the annular array to the outside, and the value range of the radiuses is 50 nm-95 nm.
6. Ultra low noise photodetector according to claim 5, characterized in that said top mirror (21) and said bottom mirror (23) satisfy a target phase
Wherein,
x and y are the coordinates of the center of a circle of the nano column on the top mirror (21) or the bottom mirror (23); f is the focal length of the top mirror (21) or the bottom mirror (23); λ is the wavelength of the target incident light.
7. An ultra low noise photodetector according to any of claims 3 to 6, characterized in that said ultra-surface micro-nano structure (2) further comprises: a transparent support layer (22);
the transparent support layer (22) is arranged between the top mirror (21) and the bottom mirror (23); the thickness of the transparent support layer (22) is equal to the preset distance.
8. Ultra low noise photodetector according to claim 7, characterized in that said transparent supporting layer (22) is a quartz layer, SiO2A layer, a SiN layer, a GaO layer, or a sapphire layer.
9. An ultra low noise photodetector according to any of claims 2 to 6, characterized in that said ultra-surface micro-nano structure (2) further comprises: a connecting layer (24);
the bottom mirror (23) is coupled with the photosensitive surface of the detector body (1) through the connecting layer (24).
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| US20190044003A1 (en) * | 2018-03-21 | 2019-02-07 | Intel Corporation | Optical receiver employing a metasurface collection lens |
| CN111477703A (en) * | 2020-04-14 | 2020-07-31 | 北京工业大学 | Large-aperture high-speed photoelectric detector |
| CN112558293A (en) * | 2020-11-26 | 2021-03-26 | 中国科学院上海微系统与信息技术研究所 | Compact common-path confocal infrared dual-waveband optical system and manufacturing method thereof |
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