CN113836059A - 一种应用于eeprom存储器的控制系统 - Google Patents
一种应用于eeprom存储器的控制系统 Download PDFInfo
- Publication number
- CN113836059A CN113836059A CN202111417377.3A CN202111417377A CN113836059A CN 113836059 A CN113836059 A CN 113836059A CN 202111417377 A CN202111417377 A CN 202111417377A CN 113836059 A CN113836059 A CN 113836059A
- Authority
- CN
- China
- Prior art keywords
- eeprom
- module
- eeprom memory
- read
- control
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000015654 memory Effects 0.000 title claims abstract description 160
- 238000001514 detection method Methods 0.000 claims description 17
- 238000010586 diagram Methods 0.000 description 16
- PWPJGUXAGUPAHP-UHFFFAOYSA-N lufenuron Chemical compound C1=C(Cl)C(OC(F)(F)C(C(F)(F)F)F)=CC(Cl)=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F PWPJGUXAGUPAHP-UHFFFAOYSA-N 0.000 description 4
- 230000006870 function Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008570 general process Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
- G06F13/14—Handling requests for interconnection or transfer
- G06F13/16—Handling requests for interconnection or transfer for access to memory bus
- G06F13/1668—Details of memory controller
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
Abstract
Description
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202111417377.3A CN113836059B (zh) | 2021-11-26 | 2021-11-26 | 一种应用于eeprom存储器的控制系统 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202111417377.3A CN113836059B (zh) | 2021-11-26 | 2021-11-26 | 一种应用于eeprom存储器的控制系统 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN113836059A true CN113836059A (zh) | 2021-12-24 |
CN113836059B CN113836059B (zh) | 2022-03-29 |
Family
ID=78971503
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202111417377.3A Active CN113836059B (zh) | 2021-11-26 | 2021-11-26 | 一种应用于eeprom存储器的控制系统 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN113836059B (zh) |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5361228A (en) * | 1992-04-30 | 1994-11-01 | Fuji Photo Film Co., Ltd. | IC memory card system having a common data and address bus |
US5603001A (en) * | 1994-05-09 | 1997-02-11 | Kabushiki Kaisha Toshiba | Semiconductor disk system having a plurality of flash memories |
US6839774B1 (en) * | 1999-10-21 | 2005-01-04 | Samsung Electronics Co., Ltd. | Single-chip data processing apparatus incorporating an electrically rewritable nonvolatile memory and method of operating the same |
US7190190B1 (en) * | 2004-01-09 | 2007-03-13 | Altera Corporation | Programmable logic device with on-chip nonvolatile user memory |
CN102999453A (zh) * | 2012-10-12 | 2013-03-27 | 杭州中天微系统有限公司 | 用于系统芯片集成的通用非易失性存储器控制装置 |
CN103116551A (zh) * | 2013-01-31 | 2013-05-22 | 苏州国芯科技有限公司 | 应用于CLB总线的NorFLASH存储接口模块 |
CN103309824A (zh) * | 2012-03-12 | 2013-09-18 | 海尔集团公司 | Eeprom数据通用读写系统 |
CN103677742A (zh) * | 2013-12-13 | 2014-03-26 | 广西科技大学 | 多浮点操作数加/减运算控制器 |
CN105117236A (zh) * | 2015-06-30 | 2015-12-02 | 无锡华润矽科微电子有限公司 | 一种自动校验的编程烧写方法 |
CN106158032A (zh) * | 2016-06-30 | 2016-11-23 | 深圳市航顺芯片技术研发有限公司 | 用于eeprom存储器的擦除和写入电路及其方法 |
CN107422982A (zh) * | 2016-04-14 | 2017-12-01 | 三星电子株式会社 | 包括非易失性存储器和控制器的存储装置及其操作方法 |
-
2021
- 2021-11-26 CN CN202111417377.3A patent/CN113836059B/zh active Active
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5361228A (en) * | 1992-04-30 | 1994-11-01 | Fuji Photo Film Co., Ltd. | IC memory card system having a common data and address bus |
US5603001A (en) * | 1994-05-09 | 1997-02-11 | Kabushiki Kaisha Toshiba | Semiconductor disk system having a plurality of flash memories |
US6839774B1 (en) * | 1999-10-21 | 2005-01-04 | Samsung Electronics Co., Ltd. | Single-chip data processing apparatus incorporating an electrically rewritable nonvolatile memory and method of operating the same |
US7190190B1 (en) * | 2004-01-09 | 2007-03-13 | Altera Corporation | Programmable logic device with on-chip nonvolatile user memory |
CN103309824A (zh) * | 2012-03-12 | 2013-09-18 | 海尔集团公司 | Eeprom数据通用读写系统 |
CN102999453A (zh) * | 2012-10-12 | 2013-03-27 | 杭州中天微系统有限公司 | 用于系统芯片集成的通用非易失性存储器控制装置 |
CN103116551A (zh) * | 2013-01-31 | 2013-05-22 | 苏州国芯科技有限公司 | 应用于CLB总线的NorFLASH存储接口模块 |
CN103677742A (zh) * | 2013-12-13 | 2014-03-26 | 广西科技大学 | 多浮点操作数加/减运算控制器 |
CN105117236A (zh) * | 2015-06-30 | 2015-12-02 | 无锡华润矽科微电子有限公司 | 一种自动校验的编程烧写方法 |
CN107422982A (zh) * | 2016-04-14 | 2017-12-01 | 三星电子株式会社 | 包括非易失性存储器和控制器的存储装置及其操作方法 |
CN106158032A (zh) * | 2016-06-30 | 2016-11-23 | 深圳市航顺芯片技术研发有限公司 | 用于eeprom存储器的擦除和写入电路及其方法 |
Also Published As
Publication number | Publication date |
---|---|
CN113836059B (zh) | 2022-03-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100858756B1 (ko) | 저장 디바이스 및 호스트 장치 | |
CN101719103B (zh) | 基于存储设备的信息处理方法以及存储设备 | |
US7555629B2 (en) | Memory card providing hardware acceleration for read operations | |
EP1242868B1 (en) | Organization of blocks within a nonvolatile memory unit to effectively decrease sector write operation time | |
US5974499A (en) | Memory system having read modify write function and method | |
EP2428962A2 (en) | Nonvolatile memory system, and data read/write method for nonvolatile memory system | |
US8732385B2 (en) | Non-volatile memory, controller controlling next access | |
EP0929075A1 (en) | Synchronous type semiconductor memory device | |
CN108733578A (zh) | 快闪存储器的垃圾回收断电回复方法及使用该方法的装置 | |
US9437264B2 (en) | Memory operation latency control | |
KR19990029196A (ko) | 반도체 기억 장치 및 그 데이터 관리 방법 | |
US8489780B2 (en) | Power saving in NAND flash memory | |
CN112259142B (zh) | 用于自容式仪器的超低功耗的大容量数据存储方法 | |
JP2004185273A (ja) | メモリカード及び電子デバイス | |
WO2014090406A1 (en) | Method, device, and system including configurable bit-per-cell capability | |
US6442068B1 (en) | Non-volatile memory with functional capability of burst mode read and page mode read during suspension of an operation of electrical alteration | |
CN113836059B (zh) | 一种应用于eeprom存储器的控制系统 | |
CN112256203B (zh) | Flash存储器的写入方法、装置、设备、介质及系统 | |
US20230259307A1 (en) | Memory system | |
JP2001512614A (ja) | 可変ページサイズを有する再プログラム可能メモリデバイス | |
TWI553642B (zh) | 資料存取命令執行方法以及使用該方法的快閃記憶體裝置 | |
CN110209433B (zh) | 一种识别不同型号集中器的方法 | |
WO2006038068A1 (en) | Method for improving programming speed in memory devices | |
US8166228B2 (en) | Non-volatile memory system and method for reading and storing sub-data during partially overlapping periods | |
CN109614046A (zh) | 一种用以连续快速产生闪存接口讯号序列的方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20221026 Address after: 510800 No.1, Yinsong 6th Street, No.3, Yingbin Avenue, Huadu District, Guangzhou City, Guangdong Province Patentee after: DEVELOPMENT Research Institute OF GUANGZHOU SMART CITY Patentee after: GUANGZHOU ZHONGDA DIGITAL SCIENCE & TECHNOLOGY CO.,LTD. Patentee after: Guangzhou Zhongke Integrated Circuit Design Co.,Ltd. Address before: 510800 No.1, Yinsong 6th Street, No.3, Yingbin Avenue, Huadu District, Guangzhou City, Guangdong Province Patentee before: DEVELOPMENT Research Institute OF GUANGZHOU SMART CITY Patentee before: GUANGZHOU ZHONGDA DIGITAL SCIENCE & TECHNOLOGY CO.,LTD. |
|
CB03 | Change of inventor or designer information | ||
CB03 | Change of inventor or designer information |
Inventor after: Qin Junrui Inventor after: Chen Zhuorong Inventor after: Wu Jin Inventor after: Ding Yanyu Inventor after: Duan Zhikui Inventor before: Qin Junrui Inventor before: Chen Zhuorong Inventor before: Hu Jianguo Inventor before: Wu Jin Inventor before: Wang Deming Inventor before: Ding Yanyu Inventor before: Duan Zhikui |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20231115 Address after: 510800 No. 3, Yingbin Avenue, Huadu District, Guangzhou, Guangdong Patentee after: DEVELOPMENT Research Institute OF GUANGZHOU SMART CITY Patentee after: GUANGZHOU ZHONGDA DIGITAL SCIENCE & TECHNOLOGY CO.,LTD. Address before: 510800 No.1, Yinsong 6th Street, No.3, Yingbin Avenue, Huadu District, Guangzhou City, Guangdong Province Patentee before: DEVELOPMENT Research Institute OF GUANGZHOU SMART CITY Patentee before: GUANGZHOU ZHONGDA DIGITAL SCIENCE & TECHNOLOGY CO.,LTD. Patentee before: Guangzhou Zhongke Integrated Circuit Design Co.,Ltd. |