CN113824439A - Switch tube assembly, radio frequency switch circuit, numerical control attenuator circuit and numerical control phase shifter circuit - Google Patents
Switch tube assembly, radio frequency switch circuit, numerical control attenuator circuit and numerical control phase shifter circuit Download PDFInfo
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- CN113824439A CN113824439A CN202111052769.4A CN202111052769A CN113824439A CN 113824439 A CN113824439 A CN 113824439A CN 202111052769 A CN202111052769 A CN 202111052769A CN 113824439 A CN113824439 A CN 113824439A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H17/00—Networks using digital techniques
- H03H17/0054—Attenuators
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H17/00—Networks using digital techniques
- H03H17/08—Networks for phase shifting
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
- H04B1/401—Circuits for selecting or indicating operating mode
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Abstract
The application discloses switch tube subassembly, radio frequency switch circuit, numerical control attenuator circuit and numerical control phase shifter circuit, wherein, the switch tube subassembly includes: a switching tube and a gate resistor; the grid end of the switching tube is connected with the second end of the grid resistor; the first terminal of the gate resistor is connected to a control voltage. The invention analyzes the low-frequency equivalent circuit of the GaAs pHEMT tube, and provides a method for improving the low-frequency power capacity and linearity of a radio frequency switch, a numerical control attenuator and a numerical control phase shifter. The method can improve the low-frequency power capacity and linearity of the radio frequency switch, the numerical control attenuator and the numerical control phase shifter, and has obvious effect.
Description
Technical Field
The application belongs to the technical field of communication, and in particular relates to a switch tube assembly, a radio frequency switch circuit, a numerical control attenuator circuit and a numerical control phase shifter circuit.
Background
The radio frequency switch is a circuit for controlling the on-off of signals and selecting transmission channels, is widely applied to the fields of microwave communication, radar systems, phased arrays, electronic warfare, automatic test equipment and the like, is also commonly applied to control circuits such as attenuators, phase shifters and the like, and realizes the attenuation or phase shift of signals by selecting different signal transmission paths through the on-off of the radio frequency switch. The GaAs pseudomorphic high electron mobility transistor (pHEMT) switch has the characteristics of low conduction loss, high switching speed, high reliability and the like, and is widely applied to practical engineering. Recent studies have found that there is a problem of a steep drop in power capacity and linearity when the radio frequency switch is applied at low frequencies (below 100 MHz). This phenomenon seriously affects the application of radio frequency switches and control circuits such as attenuators and phase shifters formed by switching tubes in low frequency. Therefore, the research on improving the low-frequency power capacity and the linearity of the radio frequency switch, the numerical control attenuator and the numerical control phase shifter has very important value and practical significance.
Disclosure of Invention
An object of the present application is to solve at least the above problems and/or disadvantages and to provide at least the advantages described hereinafter.
The application provides a switch tube assembly, the switch tube assembly includes: a switching tube and a gate resistor; the grid end of the switching tube is connected with the second end of the grid resistor; the first terminal of the gate resistor is connected to a control voltage.
Optionally, in this embodiment of the application, the gate voltage of the switching tube when operating at a low frequency is: resistance value R according to gate resistancebiasAnd gate-source equivalent impedance.
The application provides a numerical control attenuator circuit, includes at least one above-mentioned switch tube subassembly.
Optionally, in this embodiment of the present application, a single attenuator unit of the digitally controlled attenuator circuit includes two of the switching tube assemblies; wherein, the first switch tube M of the first switch tube assembly1Source terminal and first capacitor C1First terminal, first resistor R1Second terminal, third resistor R3Second terminal, fourth resistor R4Is connected with the second end of the first switch tube M1Drain terminal and second capacitor C2Second terminal, third resistor R3First terminal, fifth resistor R5Is connected with the first end of the first connecting pipe; a fourth resistor R4First terminal and fifth resistor R5Second terminal, sixth resistor R6Is connected with the first end of the first connecting pipe; the first switch tubeSecond gate resistance R of the component2The first end of the first control end A is connected with the first control end A; second switching tube M of second switching tube assembly2And the drain terminal of the resistor and the sixth resistor R6Is connected with the second end of the first end; the second switch tube M2Source terminal and third capacitor C3Is connected with the first end of the first connecting pipe; a seventh gate resistance R of the second switching tube assembly7Is connected to the second control terminal B.
The application provides a numerical control phase shifter circuit, includes at least one above-mentioned switch tube subassembly.
Optionally, in this embodiment of the present application, a single phase shift unit of the digitally controlled phase shifter circuit includes four of the switch tube assemblies; wherein, the third switching tube M of the third switching tube component1Source terminal of and fifth switching tube component of fifth switching tube component3The source end of the transformer is connected; the third switch tube M1Drain terminal and fourth capacitor C1Is connected to the second terminal of the fourth capacitor C1First terminal and first inductor L1Second terminal, fifth capacitor C2Is connected to the second terminal of the fifth capacitor C2First end of and fourth switch tube assembly2Source terminal of (3) is connected, the fourth switching tube M2Drain terminal of and a sixth switching tube M of the sixth switching tube assembly4The drain end of the first transistor is connected; the sixth switching tube M4Source terminal and second inductor L2First terminal, seventh capacitance C4Is connected to the first terminal of the seventh capacitor C4Second terminal and sixth capacitor C3Is connected to the sixth capacitor C3First terminal and second inductor L2Second terminal of, the fifth switching tube M3The drain end of the first transistor is connected; a third gate resistance R of the third switching tube component1And a fourth gate resistance R of the fourth switching tube component2Is connected with the third control end A; a fifth gate resistance R of the fifth switching tube component3And a sixth gate resistance R of a sixth switching tube component4Is connected with the fourth control terminal B.
The radio frequency switch circuit provided by the application comprises at least one switch tube component.
Optionally, in this embodiment of the present application, the radio frequency switching circuit includes four switching tube assemblies; wherein a seventh gate resistance R of the seventh switching tube component1And a tenth gate resistor R of a tenth switching tube component4Is connected with the fifth control end A, and a seventh switching tube M of the seventh switching tube piece1Source terminal and eighth capacitor C2And a ninth switching tube M of the ninth switching tube assembly3Is connected with the drain end of the seventh switching tube M1Drain terminal and ninth capacitor C1And an eighth switching tube M of the eighth switching tube assembly2Source end of the eighth switching tube M2Drain terminal of and tenth capacitor C3And a tenth switching tube M of a tenth switching tube assembly4The drain end of the first transistor is connected; an eighth gate resistance R of the eighth switching tube component2And a ninth gate resistor R of a ninth switching tube component3Is connected with the sixth control terminal B, a ninth switching tube M of the ninth switching tube assembly3Source terminal and eleventh capacitor C4Is connected with the second end of the first end; the tenth switch tube M4Source terminal and twelfth capacitor C5Is connected to the second end of the first housing.
Compared with the prior art, the method has the following beneficial effects:
the utility model provides a switch tube subassembly, its characterized in that, the switch tube includes: a switching tube and a gate resistor; the grid end of the switching tube is connected with the second end of the grid resistor; the first terminal of the gate resistor is connected to a control voltage. The invention analyzes the low-frequency equivalent circuit of the GaAs pHEMT tube, and provides a method for improving the low-frequency power capacity and linearity of a radio frequency switch, a numerical control attenuator and a numerical control phase shifter. The method can improve the low-frequency power capacity and linearity of the radio frequency switch, the numerical control attenuator and the numerical control phase shifter, and has obvious effect.
Additional advantages, objects, and features of the application will be set forth in part in the description which follows and in part will become apparent to those having ordinary skill in the art upon examination of the following or may be learned from practice of the application.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic diagram of a switching tube assembly and an equivalent circuit diagram.
Fig. 2 is a circuit diagram of the rf switch.
FIG. 3 is a comparison graph of simulation results of the low-frequency IP1dB of the radio-frequency switch and the low-frequency IP1dB of the single-pole double-throw switch with the gate resistance and the size of the switching tube increased simultaneously.
FIG. 4 is a graph comparing simulation results of the low-frequency IIP3 of the RF switch and the low-frequency IIP3 of the single-pole double-throw switch with the increased gate resistance and the increased size of the switch tube.
Fig. 5 is a circuit configuration diagram of a single attenuation unit.
FIG. 6 is a circuit diagram of a single phase shift unit.
Detailed Description
The present application will now be described in further detail with reference to the accompanying drawings, whereby one skilled in the art can, with reference to the description, make an implementation.
It will be understood that terms such as "having," "including," and "comprising," as used herein, do not preclude the presence or addition of one or more other elements or groups thereof.
The technical solution of the present application will be described in detail below with reference to the accompanying drawings and specific embodiments.
As shown in fig. 1, a switching tube assembly, the switching tube assembly comprising: switching tube and gate resistor Rbias(ii) a Wherein, the gate terminal of the switch tube and the gate resistor RbiasIs connected with the second end of the first end; the gate resistor RbiasFirst terminal and control voltage VaAnd (4) connecting.
Optionally, in the embodiments of the present application, theThe gate voltage when the switch operates at low frequency is: resistance value R according to gate resistancebiasAnd gate-source equivalent impedance.
Specifically, FIG. 1(a) is a schematic view of a GaAs pHEMT switch tube assembly, in which V isaFor the control voltage of the switching tube, RbiasIs a gate resistance. Fig. 1(b) is an equivalent circuit diagram of a GaAs pHEMT switch tube assembly. FIG. 1(c) shows the value when VaAnd (5) 0V, and an equivalent circuit when the switching tube is conducted. At this time, the gate voltage of the switching tube is:
wherein the content of the first and second substances,
when the working frequency omega of the switch is reduced, the equivalent impedance Z of the grid sourcegsIncrease the gate voltage VgAnd thus reduced, resulting in reduced low frequency power capability and linearity of the switch. As can be derived from the above equation, the gate resistance R can be increasedbiasAnd increasing the size of the switching tube (increasing the equivalent capacitance C) to cause the gate voltage VgAnd increased, thereby improving the power capability and linearity of the switch at low frequencies.
The utility model provides a switch tube subassembly, its characterized in that, switch tube subassembly includes: a switching tube and a gate resistor; the grid end of the switching tube is connected with the second end of the grid resistor; the first terminal of the gate resistor is connected to a control voltage. The invention analyzes the low-frequency equivalent circuit of the GaAs pHEMT tube, and provides a method for improving the low-frequency power capacity and linearity of a radio frequency switch, a numerical control attenuator and a numerical control phase shifter. The method can improve the low-frequency power capacity and linearity of the radio frequency switch, the numerical control attenuator and the numerical control phase shifter, and has obvious effect.
The following will be exemplified by fig. 2 to 6.
The radio frequency switch circuit provided by the application comprises: at least one of the switch tube assemblies of the above embodiments.
Optionally, in the embodiments of the present applicationIn the radio frequency switching circuit, the rf switching circuit includes four switching tube assemblies, as shown in fig. 2, and a seventh gate resistor R of a seventh switching tube assembly1And a tenth gate resistor R of a tenth switching tube component4Is connected with the fifth control end A, and a seventh switching tube M of the seventh switching tube piece1Source terminal and eighth capacitor C2And a ninth switching tube M of the ninth switching tube assembly3Is connected with the drain end of the seventh switching tube M1Drain terminal and ninth capacitor C1And an eighth switching tube M of the eighth switching tube assembly2Source end of the eighth switching tube M2Drain terminal of and tenth capacitor C3And a tenth switching tube M of a tenth switching tube assembly4The drain end of the first transistor is connected; an eighth gate resistance R of the eighth switching tube component2And a ninth gate resistor R of a ninth switching tube component3Is connected with the sixth control terminal B, a ninth switching tube M of the ninth switching tube assembly3Source terminal and eleventh capacitor C4Is connected with the second end of the first end; the tenth switch tube M4Source terminal and twelfth capacitor C5Is connected to the second end of the first housing.
The application provides a numerical control attenuator circuit, includes at least one above-mentioned switch tube subassembly.
Optionally, in an embodiment of the present application, a single attenuation unit of the digitally controlled attenuator circuit includes two of the switching tube assemblies; as shown in fig. 5, wherein the first switch tube M of the first switch tube assembly1Source terminal and first capacitor C1First terminal, first resistor R1Second terminal, third resistor R3Second terminal, fourth resistor R4Is connected with the second end of the first switch tube M1Drain terminal and second capacitor C2Second terminal, third resistor R3First terminal, fifth resistor R5Is connected with the first end of the first connecting pipe; a fourth resistor R4First terminal and fifth resistor R5Second terminal, sixth resistor R6Is connected with the first end of the first connecting pipe; second switching tube M of second switching tube assembly2And the drain terminal of the resistor and the sixth resistor R6Is connected with the second end of the first end; the secondSwitch tube M2Source terminal and third capacitor C3Is connected to the first end of the first housing.
The application provides a numerical control phase shifter circuit, includes at least one above-mentioned switch tube subassembly.
Optionally, in this embodiment of the present application, a single phase shift unit of the digitally controlled phase shifter circuit includes four of the switch tube assemblies; as shown in fig. 6, wherein the third switching tube M of the third switching tube assembly1Source terminal of and fifth switching tube component of fifth switching tube component3The source end of the transformer is connected; the third switch tube M1Drain terminal and fourth capacitor C1Is connected to the second terminal of the fourth capacitor C1First terminal and first inductor L1Second terminal, fifth capacitor C2Is connected to the second terminal of the fifth capacitor C2First end of and fourth switch tube assembly2Source terminal of (3) is connected, the fourth switching tube M2Drain terminal of and a sixth switching tube M of the sixth switching tube assembly4The drain end of the first transistor is connected; the sixth switching tube M4Source terminal and second inductor L2First terminal, seventh capacitance C4Is connected to the first terminal of the seventh capacitor C4Second terminal and sixth capacitor C3Is connected to the sixth capacitor C3First terminal and second inductor L2Second terminal of, the fifth switching tube M3The drain end of the first transistor is connected; a third gate resistance R of the third switching tube component1And a fourth gate resistance R of the fourth switching tube component2Is connected with the first end of the first connecting pipe; a fifth gate resistance R of the fifth switching tube component3And a sixth gate resistance R of a sixth switching tube component4Is connected to the second end of the first housing.
In the embodiment of the present application, as shown in fig. 3, the low-frequency IP1dB of the conventional single-pole double-throw switch and the low-frequency IP1dB simulation results of the single-pole double-throw switch with the gate resistance and the size of the switch tube increased are compared. From simulation results, the switch low-frequency IP1dB of the invention is obviously improved.
As shown in fig. 4, the simulation results of the conventional single-pole double-throw switch low-frequency IIP3 and the single-pole double-throw switch low-frequency IIP3 with the gate resistance and the size of the switching tube increased are compared. From simulation results, the switch low-frequency IIP3 of the invention is obviously improved.
The digital control attenuator circuit and the digital control phase shifter circuit are mainly composed of a switch tube, an attenuation network and a phase shift network. Similarly, the method for improving the power capacity and linearity of the digitally controlled attenuator and digitally controlled phase shifter at low frequencies is to increase the gate resistance RbiasAnd increasing the size of the switching tube.
While embodiments of the invention have been disclosed above, it is not limited to the applications listed in the description and the embodiments. It can be applied to all kinds of fields suitable for the present invention. Additional modifications will readily occur to those skilled in the art. The single-pole double-throw switch can be changed into a single-pole triple-throw switch, a single-pole four-throw switch and a single-pole N-throw switch (N is more than or equal to 5) in the embodiment. Any increase of the gate resistance or the size of the switching tube in the rf serial branch and the rf parallel branch is considered as an extension of the present invention. In the embodiment, the single attenuation unit circuit and the single phase shift unit circuit can be changed into a numerical control attenuator circuit or a numerical control phase shifter circuit which is formed by connecting two, three or N (N is more than or equal to 4) attenuation units or phase shift units in series. Any method for increasing the gate resistance or increasing the size of the switching tube in the attenuation unit or the phase shift unit described in the embodiments is considered as an extension of the application of the present invention. It is therefore intended that the invention not be limited to the exact details and illustrations described and illustrated herein, but fall within the scope of the appended claims and equivalents thereof.
Although the embodiments of the present application have been disclosed above, they are not limited to the applications listed in the description and the embodiments. It can be applied in all kinds of fields suitable for the present application. Additional modifications will readily occur to those skilled in the art. Therefore, the application is not limited to the specific details and illustrations shown and described herein, without departing from the general concept defined by the claims and their equivalents.
Claims (8)
1. A switchgear assembly, comprising: a switching tube and a gate resistor;
the grid end of the switching tube is connected with the second end of the grid resistor; the first terminal of the gate resistor is connected to a control voltage.
2. The switching tube assembly of claim 1, wherein the gate voltage at low frequencies of operation of the switching tube is: resistance value R according to gate resistancebiasAnd gate-source equivalent impedance.
3. A digital controlled attenuator circuit comprising at least one switching tube assembly as claimed in claim 1 or 2.
4. The digitally controlled attenuator circuit of claim 3, wherein a single attenuation unit of the digitally controlled attenuator circuit includes two of the switch tube assemblies;
wherein, the first switch tube M of the first switch tube assembly1Source terminal and first capacitor C1First terminal, first resistor R1Second terminal, third resistor R3Second terminal, fourth resistor R4Is connected with the second end of the first end; the first switch tube M1Drain terminal and second capacitor C2Second terminal, third resistor R3First terminal, fifth resistor R5Is connected with the first end of the first connecting pipe; a fourth resistor R4First terminal and fifth resistor R5Second terminal, sixth resistor R6Is connected with the first end of the first connecting pipe; a second gate resistance R of the first switching tube assembly2The first end of the first control end A is connected with the first control end A;
second switching tube M of second switching tube assembly2And the drain terminal of the resistor and the sixth resistor R6Is connected with the second end of the first end; the second switch tube M2Source terminal and third capacitor C3Is connected with the first end of the first connecting pipe; a seventh gate resistance R of the second switching tube assembly7Is connected to the second control terminal B.
5. A digitally controlled phase shifter circuit comprising at least one switching tube assembly as claimed in claim 1 or 2.
6. The digitally controlled phase shifter circuit of claim 5, wherein a single phase shifting unit of the digitally controlled phase shifter circuit comprises four of the switch tube assemblies;
wherein, the third switching tube M of the third switching tube component1Source terminal of and fifth switching tube component of fifth switching tube component3The source end of the transformer is connected; the third switch tube M1Drain terminal and fourth capacitor C1Is connected to the second terminal of the fourth capacitor C1First terminal and first inductor L1Second terminal, fifth capacitor C2Is connected to the second terminal of the fifth capacitor C2First end of and fourth switch tube assembly2Source terminal of (3) is connected, the fourth switching tube M2Drain terminal of and a sixth switching tube M of the sixth switching tube assembly4The drain end of the first transistor is connected; the sixth switching tube M4Source terminal and second inductor L2First terminal, seventh capacitance C4Is connected to the first terminal of the seventh capacitor C4Second terminal and sixth capacitor C3Is connected to the sixth capacitor C3First terminal and second inductor L2Second terminal of, the fifth switching tube M3The drain end of the first transistor is connected;
a third gate resistance R of the third switching tube component1And a fourth gate resistance R of the fourth switching tube component2Is connected with the third control end A;
a fifth gate resistance R of the fifth switching tube component3And a sixth gate resistance R of a sixth switching tube component4Is connected to the fourth control terminal B.
7. A radio frequency switch circuit, the radio frequency switch circuit comprising: at least one switchgear assembly as claimed in claim 1 or 2.
8. The radio frequency switch circuit according to claim 7, wherein the radio frequency switch circuit comprises: four switch tube assemblies;
wherein a seventh gate resistance R of the seventh switching tube component1And a tenth gate resistor R of a tenth switching tube component4Is connected with the fifth control end A, and a seventh switching tube M of the seventh switching tube piece1Source terminal and eighth capacitor C2And a ninth switching tube M of the ninth switching tube assembly3Is connected with the drain end of the seventh switching tube M1Drain terminal and ninth capacitor C1And an eighth switching tube M of the eighth switching tube assembly2Source end of the eighth switching tube M2Drain terminal of and tenth capacitor C3And a tenth switching tube M of a tenth switching tube assembly4The drain end of the first transistor is connected; an eighth gate resistance R of the eighth switching tube component2And a ninth gate resistor R of a ninth switching tube component3Is connected with the sixth control terminal B, a ninth switching tube M of the ninth switching tube assembly3Source terminal and eleventh capacitor C4Is connected with the second end of the first end; the tenth switch tube M4Source terminal and twelfth capacitor C5Is connected to the second end of the first housing.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111052769.4A CN113824439A (en) | 2021-09-08 | 2021-09-08 | Switch tube assembly, radio frequency switch circuit, numerical control attenuator circuit and numerical control phase shifter circuit |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202111052769.4A CN113824439A (en) | 2021-09-08 | 2021-09-08 | Switch tube assembly, radio frequency switch circuit, numerical control attenuator circuit and numerical control phase shifter circuit |
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