CN113819847B - Double-grating structure three-dimensional micro-displacement sensor based on dislocation two-dimensional grating array - Google Patents
Double-grating structure three-dimensional micro-displacement sensor based on dislocation two-dimensional grating array Download PDFInfo
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Abstract
The invention belongs to the technical field of three-dimensional micro-displacement sensors, and particularly relates to a double-grating structure three-dimensional micro-displacement sensor based on a dislocation two-dimensional grating array. According to the invention, a double-layer grating structure is adopted, the self-imaging effect of the two-dimensional grating in a near field region is utilized, the change of transmitted light intensity along with displacement is realized, photoelectric conversion is realized by the four-quadrant detector, and then the accurate three-dimensional displacement measurement is performed through the thinned electrical signal output by the integral structure, so that the accuracy of the integral structure is improved. Meanwhile, the four-quadrant structure is utilized to realize the high integration of the whole system.
Description
Technical Field
The invention belongs to the technical field of three-dimensional micro-displacement sensors, and particularly relates to a double-grating structure three-dimensional micro-displacement sensor based on a dislocation two-dimensional grating array.
Background
The ultra-precise positioning detection technology is an important technical field of modern precise manufacturing, and the nano-scale multi-dimensional displacement measurement technology is one of key problems restricting the development of the ultra-precise positioning technology. The nano grating detection method has been widely used because of its high resolution, small volume and electromagnetic interference resistance. At present, the multi-dimensional micro-displacement detection method based on the grating displacement detection technology is mostly based on the Doppler frequency shift principle, and an integrated system is formed by a plurality of one-dimensional displacement detection unit structures or a multi-dimensional displacement measurement system is formed by a multi-light path interference structure so as to realize multi-dimensional displacement measurement. However, the above method has problems of complicated optical path, large volume, low integration, high cost, and the like. The problems limit the application of the tool bit in the aspects of multi-dimensional displacement detection, positioning and the like of the integrated numerical control machine tool bit.
Disclosure of Invention
Aiming at the technical problems of complex light path, large volume, low integration and high cost of the method, the invention provides the dislocation two-dimensional grating array-based double-grating structure three-dimensional micro-displacement sensor with high integration, high measurement precision and small volume.
In order to solve the technical problems, the invention adopts the following technical scheme:
the utility model provides a three-dimensional micro-displacement sensor of double grating structure based on dislocation two-dimensional grating array, includes laser instrument, collimation beam expander, upper layer two-dimensional grating, lower floor dislocation grating, four-quadrant detector, the top of laser instrument is provided with the collimation beam expander, be provided with upper layer two-dimensional grating on the collimation beam expander, be provided with lower floor dislocation grating on the upper layer two-dimensional grating, be provided with four-quadrant detector on the lower floor dislocation grating.
The lower dislocation type grating comprises a first lower dislocation type two-dimensional grating, a second lower dislocation type two-dimensional grating, a third lower dislocation type two-dimensional grating and a fourth lower dislocation type two-dimensional grating, wherein the first lower dislocation type two-dimensional grating and the second lower dislocation type two-dimensional grating are arranged in parallel, the third lower dislocation type two-dimensional grating and the fourth lower dislocation type two-dimensional grating are arranged in parallel, the directions of the first lower dislocation type two-dimensional grating and the second lower dislocation type two-dimensional grating are defined as X axes, an XYZ space coordinate system is established according to a right-hand screw rule, the first lower dislocation type two-dimensional grating and the second lower dislocation type two-dimensional grating are staggered by a quarter grating period in the X axis direction, the first lower dislocation type two-dimensional grating and the third lower dislocation type two-dimensional grating are staggered by a quarter grating period in the Y axis direction, and the first lower dislocation type two-dimensional grating and the fourth lower dislocation type two-dimensional grating are staggered by a quarter self-imaging period in the Z axis direction.
The grating period of the upper layer two-dimensional grating is 100nm-1 mu m, the thickness of the upper layer two-dimensional grating and the lower layer staggered grating is 50nm-1 mu m, and the duty ratio of the upper layer two-dimensional grating and the lower layer staggered grating is 0.5.
The upper layer two-dimensional grating is provided with a material with good light blocking property at the incident wavelength, the material with good light blocking property adopts a semiconductor or metal with low transmittance, and the transmittance of a non-etched area of the upper layer two-dimensional grating at the incident wavelength is not higher than 50%.
Four quadrants of the four-quadrant detector are in one-to-one correspondence with the first lower dislocation type two-dimensional grating, the second lower dislocation type two-dimensional grating, the third lower dislocation type two-dimensional grating and the fourth lower dislocation type two-dimensional grating.
The distance between the upper surface of the lower dislocation type grating and the upper surface of the upper two-dimensional grating is an integral multiple of T, the T is the period of self-imaging in the out-of-plane direction, theAnd d is a grating period, and lambda is the wavelength of the laser.
Light emitted by the laser is collimated and expanded by the collimating and beam expanding lens and then vertically enters the upper two-dimensional grating, the light is diffracted by the upper two-dimensional grating and then is generated to be imaged, a lower dislocation type grating is placed in a self-imaging area, light beams transmitted by the lower dislocation type grating are received by a four-quadrant detector, the first lower dislocation type two-dimensional grating and the second lower dislocation type two-dimensional grating are staggered by one quarter grating period in the X-axis direction, the first lower dislocation type two-dimensional grating and the third lower dislocation type two-dimensional grating are staggered by one quarter grating period in the Y-axis direction, the light intensity received by the first lower dislocation type two-dimensional grating and the fourth lower dislocation type two-dimensional grating are staggered by one quarter self-imaging period in the Z-axis direction, the light intensity received by the four-quadrant detector is a four-way sine curve, finally, four quadrants of the four-quadrant detector are respectively output four-way voltage signals, the output signals of the four-quadrant detector are the reference signals, the output signals of the four quadrants are the four-quadrant voltage signals under the condition that the input by displacement of the corresponding directions, the output signals of the four quadrants are 90 degrees in addition, and the output signals of the output by the corresponding voltage measurement signals of the four quadrants are further output by corresponding to the output signals, and the output by the output voltage signal of the output by the corresponding to the output by A, B.
Compared with the prior art, the invention has the beneficial effects that:
according to the invention, a double-layer grating structure is adopted, the self-imaging effect of the two-dimensional grating in a near field region is utilized, the change of transmitted light intensity along with displacement is realized, photoelectric conversion is realized by the four-quadrant detector, and then the accurate three-dimensional displacement measurement is performed through the thinned electrical signal output by the integral structure, so that the accuracy of the integral structure is improved. Meanwhile, the four-quadrant structure is utilized to realize the high integration of the whole system.
Drawings
FIG. 1 is a schematic diagram of the structure of the present invention;
FIG. 2 is a schematic diagram of the structure of an upper two-dimensional grating according to the present invention;
FIG. 3 is a schematic diagram of the structure of the underlying dislocation grating of the present invention;
FIG. 4 is a side view of an underlying dislocation grating according to the present invention;
FIG. 5 is a graph of simulation results of the X-Y plane self-imaging of the present invention;
FIG. 6 is a graph showing the intensity profile of self-imaging light in the X direction according to the present invention;
FIG. 7 is a graph showing the intensity profile of self-imaging light in the Y direction in accordance with the present invention;
FIG. 8 is a graph showing the results of the simulation of the X-Z plane self-imaging and the intensity distribution on the Z axis of the present invention;
FIG. 9 is a graph showing the variation of the transmitted light intensity with the displacement of the same grating region according to the present invention;
FIG. 10 is a graph showing the variation of the phase difference of transmitted light intensity in adjacent grating regions according to the present invention.
Wherein: 1 is a laser, 2 is a collimation beam expander, 3 is an upper layer two-dimensional grating, 4 is a lower layer dislocation type grating, 5 is a four-quadrant detector, 401 is a first lower layer dislocation type two-dimensional grating, 402 is a second lower layer dislocation type two-dimensional grating, 403 is a third lower layer dislocation type two-dimensional grating, and 404 is a fourth lower layer dislocation type two-dimensional grating.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the description of the present invention, it should be noted that, unless explicitly specified and limited otherwise, the terms "connected," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
The double-grating structure three-dimensional micro-displacement sensor based on the dislocation two-dimensional grating array is shown in fig. 1 and 2, and comprises a laser 1, a collimation beam expander 2, an upper layer two-dimensional grating 3, a lower layer dislocation grating 4 and a four-quadrant detector 5, wherein the collimation beam expander 2 is arranged above the laser 1, the upper layer two-dimensional grating 3 is arranged on the collimation beam expander 2, the lower layer dislocation grating 4 is arranged on the upper layer two-dimensional grating 3, and the four-quadrant detector 5 is arranged on the lower layer dislocation grating 4.
Further, as shown in fig. 3 and 4, the lower dislocation type grating 4 includes a first lower dislocation type two-dimensional grating 401, a second lower dislocation type two-dimensional grating 402, a third lower dislocation type two-dimensional grating 403, and a fourth lower dislocation type two-dimensional grating 404, the first lower dislocation type two-dimensional grating 401 and the second lower dislocation type two-dimensional grating 402 are arranged in parallel, the third lower dislocation type two-dimensional grating 403 and the fourth lower dislocation type two-dimensional grating 404 are arranged in parallel, the directions of the first lower dislocation type two-dimensional grating 401 and the second lower dislocation type two-dimensional grating 402 are defined as X axes, an XYZ space coordinate system is established according to a right-hand screw rule, the first lower dislocation type two-dimensional grating 401 and the second lower dislocation type two-dimensional grating 402 are staggered by one quarter grating period in the X axis direction, the first lower dislocation type two-dimensional grating 401 and the third lower dislocation type two-dimensional grating 403 are staggered by one quarter grating period in the Y axis direction, and the fourth lower dislocation type two-dimensional grating 404 are staggered by one self-imaging period in the Z axis direction.
Further, in order to ensure a good sinusoidal response of the output signal to displacement, the grating periods of the upper two-dimensional grating 3 and the lower dislocation type grating 4 are the same, the grating periods of the upper two-dimensional grating 3 and the lower dislocation type grating 4 are 100nm-1 μm, the thicknesses of the upper two-dimensional grating 3 and the lower dislocation type grating 4 are 50nm-1 μm, and the duty ratio of the upper two-dimensional grating 3 and the lower dislocation type grating 4 is 0.5.
Further, in order to achieve good self-imaging light intensity distribution, the upper layer two-dimensional grating 3 is provided with a material with good light blocking characteristics at the incident wavelength, the material with good light blocking characteristics adopts a semiconductor or metal with low transmittance, and the transmittance of the non-etched area of the upper layer two-dimensional grating 3 at the incident wavelength is not higher than 50%.
Further, in order to realize good four-quadrant signal output, four quadrants of the four-quadrant detector 5 are in one-to-one correspondence with the first lower dislocation type two-dimensional grating 401, the second lower dislocation type two-dimensional grating 402, the third lower dislocation type two-dimensional grating 403, and the fourth lower dislocation type two-dimensional grating 404.
Further, to ensure a good sinusoidal response of the output signal to displacement, the distance between the upper surface of the lower dislocation grating 4 and the upper surface of the upper two-dimensional grating 3 is an integer multiple of T, T being the period of the self-imaging in the out-of-plane direction,d is the grating period and λ is the laser wavelength.
The working flow of the invention is as follows: light emitted by the laser 1 is collimated and expanded by the collimating and beam expanding lens 2 and then vertically enters the upper layer two-dimensional grating 3, self-imaging is generated after the light is diffracted by the upper layer two-dimensional grating 3, the lower layer dislocation type grating 4 is placed in a self-imaging area, light beams transmitted by the lower layer dislocation type grating 4 are received by the four-quadrant detector 5, the first lower layer dislocation type two-dimensional grating 401 and the second lower layer dislocation type two-dimensional grating 402 are staggered by one quarter grating period in the X axis direction, the first lower layer dislocation type two-dimensional grating 401 and the third lower layer dislocation type two-dimensional grating 403 are staggered by one quarter grating period in the Y axis direction, the first lower layer dislocation type two-dimensional grating 401 and the fourth lower layer dislocation type two-dimensional grating 404 are staggered by one quarter self-imaging period in the Z axis direction, the light intensity received by the four-way sinusoidal curve is finally, four-way voltage signals are respectively output by the four-quadrant detector 5, the output signals of the four-quadrant detector are reference signals, the output signals of the first quadrant signals are the output signals of the four-way sinusoidal signals, the output signals of the four-quadrant detector output signals under the condition that the corresponding direction displacement input is the corresponding to the output signals of the first quadrant signals, the output signals of the four-quadrant signals, and the output signals of the four-quadrant signals are output signals are corresponding to the output signals of the four-phase signals and output signals, and A, B signals are respectively.
The parameters of the specific implementation mode are as follows:
laser wavelength: λ=0.635 μm;
laser power: 1.2mW;
grating period: d=1 μm;
grating duty cycle: 0.5;
grating material: al.
The specific analysis is as follows:
when a black-and-white grating made of Al material is used, the thickness of the grating is set to be 150nm, and an inverted triangle self-imaging area exists in the light beam transmission direction of the grating. Wherein, there is an image of the grating at each self-imaging period position in the out-of-plane direction, the light intensity distribution is the same as the structure of the grating, i.e. the intensity distribution of the light intensity corresponds to the grating slit and the grating line of the grating, so there will be a self-imaging plane at a position which is an integer multiple of the self-imaging out-of-plane period from the grating plane, as shown in fig. 5. The light intensity is detected in the X direction and the Y direction of the plane, and a sinusoidal light intensity signal can be obtained, as shown in fig. 6 and 7. In the in-plane direction, the self-imaging period is the same size as the grating period. In the self-imaging space, the intensity of light is detected along the Z-axis, and a sinusoidal intensity signal is obtained, as shown in fig. 8. Therefore, the lower dislocation type two-dimensional grating with the same parameters is placed in the self-imaging area of the upper two-dimensional grating, and when the upper two-dimensional grating has displacement in the X axis and the Y axis of the in-plane direction and the Z axis of the out-of-plane direction of the lower dislocation type two-dimensional grating, the light intensity of transmitted light of each quadrant of the lower dislocation type grating generates sinusoidal change along with the displacement.
Wherein the period of the self-imaging in the out-of-plane direction is
Where d is the grating period, λ is the laser wavelength, and T is the period of the self-imaging in the out-of-plane direction, where z=2.79 μm is obtained from the above equation when the grating period is 1 μm and the laser wavelength is 0.635 μm, i.e., the period of the self-imaging in the out-of-plane direction is 2.79 μm.
When the distance between the first quadrant grating region and the adjacent two grating regions is changed, the first quadrant grating region is taken as a reference, the phase of the transmitted light intensity of the other grating region, which changes along with the relative displacement, is also changed, as shown in fig. 9, and when and only when the distance between the two grating regions is nd+d/2, the phase difference of the transmitted light intensity of the two grating regions, which changes along with the displacement, is 90 degrees, as shown in fig. 10.
From the above, when the upper layer two-dimensional grating structure moves in the in-plane X, Y direction and the out-of-plane Z direction, the four paths of output signals of the detector 5 can obtain displacement in three directions, and when the signals are connected to the subdivision circuit, the displacement detection resolution can be subdivided to nano-scale, so that the measurement accuracy of the whole structure is improved.
Meanwhile, due to the adoption of the high-integration two-dimensional grating and the dislocation type two-dimensional grating array, three-dimensional displacement detection is realized in a single optical axis direction through a small number of devices such as a light source, a double-layer grating and a detector, the measurement structure is remarkably simplified, and the system integration level is improved.
The preferred embodiments of the present invention have been described in detail, but the present invention is not limited to the above embodiments, and various changes can be made within the knowledge of those skilled in the art without departing from the spirit of the present invention, and the various changes are included in the scope of the present invention.
Claims (5)
1. The double-grating structure three-dimensional micro-displacement sensor based on dislocation two-dimensional grating array is characterized in that: the laser comprises a laser (1), a collimation beam expander (2), an upper two-dimensional grating (3), a lower dislocation grating (4) and a four-quadrant detector (5), wherein the collimation beam expander (2) is arranged above the laser (1), the upper two-dimensional grating (3) is arranged on the collimation beam expander (2), the lower dislocation grating (4) is arranged on the upper two-dimensional grating (3), and the four-quadrant detector (5) is arranged on the lower dislocation grating (4); the lower dislocation type grating (4) comprises a first lower dislocation type two-dimensional grating (401), a second lower dislocation type two-dimensional grating (402), a third lower dislocation type two-dimensional grating (403) and a fourth lower dislocation type two-dimensional grating (404), wherein the first lower dislocation type two-dimensional grating (401) and the second lower dislocation type two-dimensional grating (402) are arranged in parallel, the third lower dislocation type two-dimensional grating (403) and the fourth lower dislocation type two-dimensional grating (404) are arranged in parallel, the directions of the first lower dislocation type two-dimensional grating (401) and the second lower dislocation type two-dimensional grating (402) are defined to be X-axis, an XYZ space coordinate system is established according to a right-hand screw rule, the first lower dislocation type two-dimensional grating (401) and the second lower dislocation type two-dimensional grating (402) are staggered by one quarter grating period in the X-axis direction, the first lower dislocation type two-dimensional grating (401) and the third lower dislocation type two-dimensional grating (403) are staggered by one quarter of a period in the Y-axis direction, and the first lower dislocation type two-dimensional grating (401) and the fourth lower dislocation type two-dimensional grating (404) are imaged by one quarter of the dislocation period in the Z direction;
the control method of the double-grating structure three-dimensional micro-displacement sensor based on the dislocation two-dimensional grating array comprises the following steps: light emitted by the laser (1) is vertically incident to the upper layer two-dimensional grating (3) after being collimated and expanded by the collimating and beam expanding lens (2), is diffracted by the upper layer two-dimensional grating (3) and then is generated to be imaged, a lower layer dislocation type grating (4) is placed in a self-imaging area, light beams transmitted by the lower layer dislocation type grating (4) are received by the four-quadrant detector (5), the first lower layer dislocation type two-dimensional grating (401) and the second lower layer dislocation type two-dimensional grating (402) are staggered by a quarter grating period in the X-axis direction, the first lower layer dislocation type two-dimensional grating (401) and the third lower layer dislocation type two-dimensional grating (403) are staggered by a quarter grating period in the Y-axis direction, the first lower layer dislocation type two-dimensional grating (401) and the fourth lower layer dislocation type two-dimensional grating (404) are staggered by a quarter self-imaging period in the Z-axis direction, the light intensity received by the four-quadrant detector (5) is a four-way sine curve, finally, the four-way quadrant detector (5) and the corresponding three-dimensional displacement signal is output, wherein the four-phase displacement signal and the three-dimensional displacement signal is output in the corresponding direction, and the three-dimensional displacement signal is output in the corresponding direction, and the three-dimensional displacement signal has the output signal and the three-dimensional displacement signal and the phase signal has the output signal and the phase displacement signal and the phase.
2. The dislocation two-dimensional grating array-based dual-grating structure three-dimensional micro-displacement sensor according to claim 1, wherein: the grating period of the upper layer two-dimensional grating (3) is the same as that of the lower layer staggered grating (4), the grating period of the upper layer two-dimensional grating (3) and the lower layer staggered grating (4) is 100nm-1 mu m, the thickness of the upper layer two-dimensional grating (3) and the lower layer staggered grating (4) is 50nm-1 mu m, and the duty ratio of the upper layer two-dimensional grating (3) and the lower layer staggered grating (4) is 0.5.
3. The dislocation two-dimensional grating array-based dual-grating structure three-dimensional micro-displacement sensor according to claim 1, wherein: the upper layer two-dimensional grating (3) is provided with a material with good light blocking property at the incident wavelength, the material with good light blocking property adopts a semiconductor or metal with low transmittance, and the transmittance of a non-etched area of the upper layer two-dimensional grating (3) at the incident wavelength is not higher than 50%.
4. The dislocation two-dimensional grating array-based dual-grating structure three-dimensional micro-displacement sensor according to claim 1, wherein: four quadrants of the four-quadrant detector (5) are in one-to-one correspondence with the first lower dislocation type two-dimensional grating (401), the second lower dislocation type two-dimensional grating (402), the third lower dislocation type two-dimensional grating (403) and the fourth lower dislocation type two-dimensional grating (404).
5. The dislocation two-dimensional grating array-based dual-grating structure three-dimensional micro-displacement sensor according to claim 1, wherein: the distance between the upper surface of the lower dislocation type grating (4) and the upper surface of the upper two-dimensional grating (3) is an integer multiple of T, wherein T is the period of self-imaging in the out-of-plane direction, and theAnd d is a grating period, and lambda is the wavelength of the laser.
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