CN113809255A - Quantum dot light-emitting diode doped with charge transport layer and preparation method - Google Patents
Quantum dot light-emitting diode doped with charge transport layer and preparation method Download PDFInfo
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- CN113809255A CN113809255A CN202111093129.8A CN202111093129A CN113809255A CN 113809255 A CN113809255 A CN 113809255A CN 202111093129 A CN202111093129 A CN 202111093129A CN 113809255 A CN113809255 A CN 113809255A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
- H10K50/165—Electron transporting layers comprising dopants
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
Abstract
The invention discloses a quantum dot light-emitting diode doped with a charge transport layer, which comprises: the anode layer, the hole injection layer, the hole transport layer, the quantum dot light emitting layer, the electron transport layer and the cathode layer are arranged from bottom to top in sequence; the material of the hole transport layer is a mixture of two hole transport materials; the material of the electron transport layer is a polymer doped electron transport material. According to the invention, two hole transport materials are mixed to serve as the hole transport layer, so that the hole injection efficiency is improved, the polymer-doped electron transport material serves as the electron transport layer to reduce electron injection, the hole injection is improved, and the electron injection is reduced at the same time, so that carriers in the quantum dot light emitting layer are more balanced, and the device performance is improved.
Description
Technical Field
The invention relates to the technical field of light emitting diodes, in particular to a quantum dot light emitting diode doped with a charge transport layer and a preparation method thereof.
Background
Due to the advantages of adjustable quantum dot size and composition, high color saturation, solution processing technology of quantum dot light emitting diodes (QLEDs) prepared therefrom, low manufacturing cost, and the like, the quantum dot light emitting diodes attract extensive attention in academia and industry. QLEDs have become competitors to the next generation of high performance display technology.
The QLED device mainly comprises an anode, a hole injection layer, a hole transport layer, a quantum dot light emitting layer, an electron transport layer, a metal cathode and the like. Since the first appearance of QLEDs in 1994, the performance of QLEDs has been greatly improved, even comparable to Organic Light Emitting Diodes (OLEDs), by continued optimization of quantum dots, charge transport materials, and device structures. The performance of the blue light QLEDs is far lower than that of the green light QLEDs and the red light QLEDs, the deep valence band of the blue light quantum dots makes hole injection difficult, so that carrier injection is unbalanced, the possibility of Auger recombination is increased, and the performance of the device is poor.
In order to reduce the hole injection barrier, the hole mobility of the currently commonly used deep HOMO level hole transport material such as PVK (HOMO level 5.8eV) is lower by 2.5 × 106cm2v-1s-1Thus, hole injection is still low, and hole transport materials with high hole mobility such as TFB (hole mobility 1.0 x 102 cm) are commonly used2v-1s-1) The HOMO energy level of the material is shallow, and the material has a large transmission barrier with quantum dots, so that hole injection is difficult, and the commonly used electron transmission material ZnO has a small transmission barrier with the quantum dots and high electron mobility, so that carrier injection in the device is unbalanced.
Disclosure of Invention
The invention aims to provide a charge transport layer doped quantum dot light-emitting diode and a preparation method thereof.
In order to achieve the purpose, the invention provides the following scheme:
a charge transport layer doped quantum dot light emitting diode comprising: the anode layer, the hole injection layer, the hole transport layer, the quantum dot light emitting layer, the electron transport layer and the cathode layer are arranged from bottom to top in sequence; the material of the hole transport layer is a mixture of two hole transport materials; the material of the electron transport layer is a polymer doped electron transport material.
Optionally, the anode layer is made of ITO or IZO.
Optionally, the material of the hole injection layer is PEDOT: PSS, MoO3PMA or TPA.
Optionally, the material of the hole transport layer is a mixture of a hole transport material with a deep HOMO energy level and a hole transport material with a high hole mobility; the hole transport material of the deep HOMO energy level is CBP-V, CBP or PVK; the hole transport material with high hole mobility is poly-TPD or TFB.
Optionally, the material of the quantum dot light emitting layer is CdS or CdSe.
Optionally, the electron transport material is ZnO or ZnMgO; the polymer is polyvinylpyrrolidone or polyethylene glycol.
Optionally, the material of the cathode layer is Al, Ag or Au.
The invention also provides a preparation method of the quantum dot light-emitting diode doped with the charge transport layer, which comprises the following steps:
coating a hole injection layer on the anode, and annealing and forming;
dispersing two hole-transporting materials by using the same solvent, mixing according to different proportions, spin-coating the mixed material on a hole injection layer, and annealing and forming;
spin-coating a quantum dot film on the hole transport layer, and annealing and forming;
dispersing an electron transport material and a polymer by using the same solvent, doping according to different proportions, spin-coating an electron transport layer on the quantum dot film, and annealing and forming;
and evaporating a cathode layer on the electron transmission layer to obtain the quantum dot light-emitting diode.
According to the specific embodiment provided by the invention, the invention discloses the following technical effects:
according to the invention, two hole transport materials are mixed to serve as the hole transport layer, so that the hole injection efficiency is improved, the polymer-doped electron transport material serves as the electron transport layer to reduce electron injection, the hole injection is improved, and the electron injection is reduced at the same time, so that carriers in the quantum dot light emitting layer are more balanced, and the device performance is improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without inventive exercise.
FIG. 1 is a schematic diagram of a quantum dot light emitting diode doped with a charge transport layer according to an embodiment of the present invention;
fig. 2 is a flowchart of a method for manufacturing a quantum dot light emitting diode doped with a charge transport layer according to an embodiment of the invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention aims to provide a charge transport layer doped quantum dot light-emitting diode and a preparation method thereof.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.
As shown in fig. 1, a quantum dot light emitting diode includes, from bottom to top, an anode layer 1, a hole injection layer 2, a hole transport layer 3, a quantum dot light emitting layer 4, an electron transport layer 5, and a cathode layer 6. The two hole transport materials are mixed to form the hole transport layer 3, the polymerization doped electron transport material is used as the electron transport layer 5, and the method for improving the hole transport and reducing the electron transport achieves carrier balance and improves the performance of the device.
As an alternative embodiment, the anode layer 1 uses ITO or IZO.
As an alternative embodiment, the hole injection layer 2 is made of PEDOT: PSS, MoO3PMA and TPA.
As an alternative embodiment, the hole transport layer 3 employs two hole transport materials, including but not limited to, a deep HOMO level hole transport material including but not limited to one of CBP-V, CBP, PVK, and a high hole mobility hole transport material including but not limited to one of poly-TPD, TFB.
As an alternative embodiment, the quantum dot light emitting layer 4 is made of CdS or CdSe.
As an alternative embodiment, the material adopted by the electron transport layer 5 is a polymer doped electron transport material, the electron transport material includes but is not limited to one of ZnO and ZnMgO, and the polymer includes but is not limited to one of polyvinylpyrrolidone, polyethylene glycol, and the like.
As an alternative embodiment, the cathode layer 6 is made of one of Al, Ag, and Au.
The preparation method of the quantum dot light-emitting diode comprises the following steps:
step 101: spin-coating a hole injection layer on the anode, and annealing and forming;
step 102: dispersing two hole-transporting materials by using the same solvent, mixing according to different proportions, spin-coating the mixed material on a hole injection layer, and annealing and forming;
step 103: spin-coating a quantum dot film on the hole transport layer, and annealing and forming;
step 104: dispersing an electron transport material and a polymer by using the same solvent, doping according to different proportions, spin-coating an electron transport layer on the quantum dot film, and annealing and forming;
step 105: and evaporating a cathode layer on the electron transmission layer to obtain the quantum dot light-emitting diode.
The hole injection efficiency is improved by mixing two hole transport materials as a hole transport layer, the electron injection is reduced by using the polyvinylpyrrolidone doped ZnO as an electron transport layer, the hole injection is improved, and the electron injection is reduced at the same time, so that current carriers in the light emitting layer are more balanced, and the performance of the device is improved.
The specific embodiment is as follows:
the anode layer is made of ITO
The hole injection layer is made of PEDOT: PSS. The hole transport layer adopts CBP-V and TFB as materials. The quantum dot film is made of ZnCdS/ZnS. The electron transport layer is made of ZnO and polyvinylpyrrolidone. The cathode layer is made of Al.
The preparation method of the quantum dot light-emitting diode comprises the following steps:
step 1: spin-coating a hole injection layer PEDOT: PSS is arranged on the anode ITO, and then annealing is carried out for 15min at 140 ℃ for forming;
step 2: dispersing CBP-V and TFB by toluene, mixing the mixture with CBP-V according to the proportion of TFB of 10%, 20%, 30% and 40%, spin-coating the mixture on the hole injection layer, and annealing in a glove box at 240 ℃ for 30min for molding;
and step 3: spin-coating a quantum dot film on the hole transport layer in a glove box, and annealing at 100 ℃ for 5min for forming;
and 4, step 4: dispersing electron transport materials ZnO and polyvinylpyrrolidone by using ethanol, doping according to different proportions, spin-coating an electron transport layer on a quantum dot film in a glove box, and annealing at 120 ℃ for 20min for forming;
and 5: at a vacuum degree of 6 x 10-4And pa, evaporating a cathode layer on the electron transport layer.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other.
The principles and embodiments of the present invention have been described herein using specific examples, which are provided only to help understand the method and the core concept of the present invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, the specific embodiments and the application range may be changed. In view of the above, the present disclosure should not be construed as limiting the invention.
Claims (8)
1. A charge transport layer doped quantum dot light emitting diode comprising: the anode layer, the hole injection layer, the hole transport layer, the quantum dot light emitting layer, the electron transport layer and the cathode layer are arranged from bottom to top in sequence; the material of the hole transport layer is a mixture of two hole transport materials; the material of the electron transport layer is a polymer doped electron transport material.
2. The charge transport layer doped quantum dot light emitting diode of claim 1, wherein the material of the anode is ITO or IZO.
3. The charge transport layer doped quantum dot light emitting diode of claim 1, wherein the material of the hole injection layer is PEDOT: PSS, MoO3PMA or TPA.
4. The charge transport layer doped quantum dot light emitting diode of claim 1, wherein the material of the hole transport layer is a mixture of a hole transport material of deep HOMO level and a hole transport material of high hole mobility; the hole transport material of the deep HOMO energy level is CBP-V, CBP or PVK; the hole transport material with high hole mobility is poly-TPD or TFB.
5. The charge transport layer doped quantum dot light emitting diode of claim 1, wherein the material of the quantum dot light emitting layer is CdS or CdSe.
6. The charge transport layer doped quantum dot light emitting diode of claim 1, wherein the electron transport material is ZnO or ZnMgO; the polymer is polyvinylpyrrolidone or polyethylene glycol.
7. The charge transport layer doped quantum dot light emitting diode of claim 1, wherein the material of the cathode layer is Al, Ag or Au.
8. A preparation method of a quantum dot light-emitting diode doped with a charge transport layer is characterized by comprising the following steps:
coating a hole injection layer on the anode, and annealing and forming;
dispersing two hole-transporting materials by using the same solvent, mixing according to different proportions, spin-coating the mixed material on a hole injection layer, and annealing and forming;
spin-coating a quantum dot film on the hole transport layer, and annealing and forming;
dispersing an electron transport material and a polymer by using the same solvent, doping according to different proportions, spin-coating an electron transport layer on the quantum dot film, and annealing and forming;
and evaporating a cathode layer on the electron transmission layer to obtain the quantum dot light-emitting diode.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024000517A1 (en) * | 2022-06-30 | 2024-01-04 | 京东方科技集团股份有限公司 | Light-emitting device and preparation method therefor, display panel and display device |
Citations (2)
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| CN105244451A (en) * | 2015-10-16 | 2016-01-13 | Tcl集团股份有限公司 | Quantum dot light-emitting diode with mixed HTL and preparation method of quantum dot light-emitting diode |
| CN109509842A (en) * | 2019-01-08 | 2019-03-22 | 京东方科技集团股份有限公司 | Light emitting diode with quantum dots and preparation method thereof, display panel |
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- 2021-09-17 CN CN202111093129.8A patent/CN113809255A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105244451A (en) * | 2015-10-16 | 2016-01-13 | Tcl集团股份有限公司 | Quantum dot light-emitting diode with mixed HTL and preparation method of quantum dot light-emitting diode |
| CN109509842A (en) * | 2019-01-08 | 2019-03-22 | 京东方科技集团股份有限公司 | Light emitting diode with quantum dots and preparation method thereof, display panel |
Non-Patent Citations (2)
| Title |
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| HENG ZHANG 等: "An ZnMgO:PVP inorganic–organic hybrid electron transport layer: towards efficient bottom-emission and transparent quantum dot light-emitting diodes", 《JOURNAL OF MATERIALS CHEMISTRY C》 * |
| KAI SUN等: "Blue quantum dot light emitting diodes with polyvinylpyrrolidone-doped electron transport layer", 《ORGANIC ELECTRONICS》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2024000517A1 (en) * | 2022-06-30 | 2024-01-04 | 京东方科技集团股份有限公司 | Light-emitting device and preparation method therefor, display panel and display device |
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Application publication date: 20211217 |