CN114220928A - Organic light emitting device and display screen - Google Patents
Organic light emitting device and display screen Download PDFInfo
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- CN114220928A CN114220928A CN202111525288.0A CN202111525288A CN114220928A CN 114220928 A CN114220928 A CN 114220928A CN 202111525288 A CN202111525288 A CN 202111525288A CN 114220928 A CN114220928 A CN 114220928A
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- H—ELECTRICITY
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- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
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- H10K30/865—Intermediate layers comprising a mixture of materials of the adjoining active layers
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/12—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
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Abstract
The application provides an organic light-emitting device and a display screen, and solves the problem that the light-emitting efficiency of the organic light-emitting device is low in the prior art. The organic light-emitting device comprises a light-emitting layer, wherein the light-emitting layer comprises a host material and a guest material, the host material and part of the guest material are mixed to form at least one mixed material layer, and the other part of the guest material forms at least one guest material layer.
Description
Technical Field
The application relates to the technical field of semiconductor devices, in particular to an organic light-emitting device and a display screen.
Background
Organic Light-Emitting diodes (OLEDs) are gradually coming into the field of vision as a new generation of flat panel display technology. At present, in order to meet different requirements, OLEDs have multiple structures, and two technical means, namely a multilayer structure and a host-guest doping system, are commonly adopted. The multilayer structure includes, for example, an anode, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer, and a cathode. The host-guest doping system is formed by mixing a host material and a guest material doped into the host material as a dopant, namely, the periphery of each guest material molecule is surrounded by the host material, holes injected from an anode and electrons injected from a cathode are compounded on the host material to form triplet-state and singlet-state excitons, the excitons transfer energy to the guest material, after the guest material is excited, the triplet state or the singlet state of the guest material is unstable, and the excitons return to the ground state from the excited state and release photons for light emission. The performance of OLEDs of this structure is significantly improved, however, how to further increase the luminous efficiency of OLEDs is always one of the problems that are constantly being explored by the skilled person.
Disclosure of Invention
In view of this, embodiments of the present application provide an organic light emitting device and a display screen to solve the problem of low light emitting efficiency of an OLED in the prior art.
In a first aspect, the present disclosure provides an organic light emitting device, including a light emitting layer, where the light emitting layer includes a host material and a guest material, where the host material is mixed with a part of the guest material to form at least one mixed material layer, and another part of the guest material constitutes at least one guest material layer.
In one embodiment, the light emitting layer includes a recombination region having a relative concentration of excitons that is not less than 20% of the highest relative concentration of excitons in the light emitting layer, and the at least one guest material layer includes a first guest material layer located within the recombination region.
In one embodiment, the at least one mixed material layer includes a first mixed material layer and a second mixed material layer, the first guest material layer, and the second mixed material layer are sequentially stacked, and a ratio of thicknesses of the first mixed material layer and the second mixed material layer is greater than or equal to 3:7 and less than or equal to 7: 3.
In one embodiment, the host material comprises a first and a second different host material, the first host material being located in a first mixed material layer and the second host material being located in a second mixed material layer.
In one embodiment, the thickness of the first guest material layer is less than or equal to 1/80 of the sum of the thicknesses of the first mixed material layer and the second mixed material layer.
In one embodiment, a sum of thicknesses of the first mixture material layer and the second mixture material layer is greater than or equal to 300 angstroms and less than or equal to 500 angstroms, and a thickness of the guest material layer is greater than or equal to 1 angstrom and less than or equal to 5 angstroms.
In one embodiment, the at least one guest material layer further includes a second guest material layer disposed at an interval from the first guest material layer, and the second guest material layer and the first guest material layer are respectively located at two side edge regions of the composite region.
In one embodiment, the at least one mixed material layer includes a first mixed material layer, a second mixed material layer, and a third mixed material layer, and the first mixed material layer, the first guest material layer, the second mixed material layer, the second guest material layer, and the third mixed material layer are sequentially stacked.
In one embodiment, the host material is a pre-mixed material of a P-type organic material and an N-type organic material, and the guest material is a phosphorescent material.
In a second aspect, a display screen is provided, which includes the organic light emitting device provided in any of the above embodiments.
According to the organic light-emitting device and the display screen provided by the application, by implementing part of the guest material in the light-emitting layer as at least one guest material layer, the molecular concentration of the guest material at the position of the guest material layer in the light-emitting layer is improved, so that the higher energy conversion efficiency at the position of the guest material layer is ensured, the energy conversion position is more concentrated, the energy transferred by the host material can be converted into light energy by the guest material as much as possible, and the light-emitting efficiency of the organic light-emitting device is improved.
Drawings
Fig. 1 is a schematic structural diagram of an organic light emitting device provided in a first embodiment of the present application.
Fig. 2 is a graph of luminous efficiency of the organic light emitting device shown in fig. 1 according to an embodiment of the present application.
Fig. 3 is a life-time graph of the organic light emitting device shown in fig. 1 according to an embodiment of the present application.
Fig. 4 is a schematic structural diagram of an organic light emitting device according to a second embodiment of the present application.
Fig. 5 is a flowchart of a method for manufacturing an organic light emitting device according to an embodiment of the present disclosure.
Detailed Description
As described in the background art, the light emitting efficiency of the OLED adopting the multi-layer structure and the host-guest doping system in the prior art is to be further improved. The inventors have found that the light emitting efficiency of the OLED can be further improved by optimizing the position of the guest material in the light emitting layer, and implementing a part of the guest material in the light emitting layer as a guest material layer. Based on this, the present application provides an organic light emitting device and a display screen using the same, in which at least a part of the guest material in the light emitting layer is implemented as a guest material layer, that is, a guest material layer is disposed in the light emitting layer, rather than a mixed material layer formed by all the guest material and the host material, so that the technical effect of improving the light emitting efficiency of the OLED is achieved.
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
Fig. 1 is a schematic structural diagram of an organic light emitting device provided in a first embodiment of the present application. As shown in fig. 1, the organic light emitting device 10 includes a first electrode layer, a hole injection layer, a hole transport layer, a light emitting layer 11, an electron transport layer, an electron injection layer, and a second electrode layer, which are sequentially stacked. The first electrode layer is, for example, an anode, and the second electrode layer is, for example, a cathode. The light-emitting layer 11 includes a host material and a guest material, where the host material and a part of the guest material are mixed to form at least one mixed material layer, and the other part of the guest material constitutes at least one guest material layer 111. In this case, the light-emitting layer 11 includes a guest material layer 111 and a mixed material layer 112 composed of a host material and a guest material, and the number of each film layer and the positional relationship between the film layers can be set appropriately according to actual needs. The guest material layer 111 is a film layer formed of a guest material, the host material layer is a film layer formed of a host material, and the mixed material layer 112 is a mixed material film layer formed by doping a guest material with a host material in the form of impurities.
For example, as shown in fig. 1, the organic light emitting device 10 includes a first guest material layer 111, a first mixture material layer 1121, and a second mixture material layer 1122, and the first mixture material layer 1121, the first guest material layer 111, and the second mixture material layer 1122 are stacked in this order, that is, the light emitting layer 11 includes 1 guest material layer 111 and 2 mixture material layers 112, and both side surfaces of the guest material layer 111 are covered with the mixture material layers 112.
The energy level of the host material is greater than the energy level of the guest material, so that singlet and triplet exciton energies of the host material can be efficiently transferred to the guest material. Meanwhile, the emission spectrum of the host material is greatly overlapped with the absorption spectrum of the guest material, so that the quenching effect of the host material on the exciton energy of the guest material is reduced. The guest material is used for receiving the energy of the host material and converting the energy into light energy. The host material and the guest material may be respectively selected from any one of a phosphorescent material, a fluorescent material, or a thermally delayed fluorescent material.
The host material comprises one material or a plurality of materials. When the host material comprises multiple materials, the multiple materials may be arranged in layers, i.e., different host materials are located in different layers, with the same layer containing only one host material; the plurality of materials may also form a hybrid material.
The guest material comprises one material or a plurality of materials. When the guest material comprises a plurality of materials, the plurality of materials may be arranged in layers, i.e., different guest materials are located in different layers, and the same layer contains only one guest material; the plurality of materials may also form a hybrid material.
According to the organic light emitting device provided by this embodiment, by implementing a part of the guest material in the light emitting layer 11 as at least one guest material layer 111, the molecular concentration of the guest material at the position of the guest material layer 111 in the light emitting layer is increased, thereby ensuring that the position of the guest material layer 111 has higher energy conversion efficiency, and the energy conversion position is more concentrated, so that the guest material can convert the energy of the host material into light energy as much as possible, thereby increasing the light emitting efficiency of the organic light emitting device, increasing the light emitting efficiency, i.e., reducing the current density under corresponding luminance, increasing the lifetime of the device, and reducing the power consumption of the OLED.
As shown in fig. 1, the light-emitting layer 11 includes a recombination region Q having a relative exciton concentration of not less than 20% of the highest relative exciton concentration in the light-emitting layer 11, i.e., exciton energy is mainly concentrated in the recombination region Q. The recombination region Q is located at any position of the light-emitting layer 11, for example, within the first mixed material layer 1121, within the second mixed material layer 1122, within the first guest material layer, partially within the first mixed material layer 1121 and the rest within the first guest material layer, partially within the second mixed material layer 1122 and the rest within the first guest material layer, and the like. In one embodiment, the guest material layer 111 is located in the recombination region Q. Since the exciton energy is mainly concentrated in the recombination region Q, by disposing the guest material layer 111 in the recombination region Q, it is ensured that more energy is transferred to the guest material, and the conversion efficiency of energy is further improved, thereby improving the light emitting efficiency of the organic light emitting device.
Fig. 2 is a graph of luminous efficiency of the organic light emitting device shown in fig. 1 according to an embodiment of the present application. Fig. 3 is a life-time graph of the organic light emitting device shown in fig. 1 according to an embodiment of the present application. Among them, the life span of the organic light emitting device is measured by a percentage of the luminance decay within the same time. In the test process, the selected host material is a premixed material of a P-type organic material and an N-type organic material, the selected guest material is a green phosphorescent material, and the doping ratio is 6-14%. In this case, the light-emitting layer 11 is divided into 10 equal parts in the direction from the first electrode layer to the second electrode layer, and positions 0, 1, 3, 5, 7, 9, and 10 are selected as insertion positions of the guest material layer 111, thereby obtaining seven types of OLEDs. Test results show that the luminous efficiencies of the seven types of OLEDs are about 100%, 102.5%, 109%, 110.4%, 111.3%, 105.9% and 105.6% in sequence; the device lifetimes are, in order, about 96%, 95.5%, 97.8%, 97.2%, 97.9%.
It can be seen that under the above test conditions, the OLED corresponding to the insertion positions of the positions 3, 5, and 7 as the guest material layers 111 has high light emission efficiency and lifetime, the ratio of the thicknesses of the first mixture material layer 1121 and the second mixture material layer 1122 is greater than or equal to 3:7 and less than or equal to 7:3, for example, the ratio of the thicknesses of the first mixture material layer 1121 and the second mixture material layer 1122 is 7:3, 6:4, 5:5, or the like. The thickness referred to herein means a width in a direction from the first mixed material layer 1121 toward the second mixed material layer 1122 (the same applies hereinafter).
In one embodiment, as shown in fig. 1, the host material includes a first host material and a second host material that are different, the first host material is located on the first hybrid material layer 1121, and the second host material is located on the second hybrid material layer 1122. For example, when the host material is a pre-mixed material, the N-type organic material in the first host material and the N-type organic material in the second host material are different, or the P-type organic material in the first host material and the P-type organic material in the second host material are different, or both the N-type organic material and the P-type organic material in the first host material and the N-type organic material and the P-type organic material in the second host material are different.
In one embodiment, the thickness of the guest material layer 111 is less than or equal to 1/80 of the sum of the thicknesses of the first hybrid material layer 1121 and the second hybrid material layer 1122. For example, the sum of the thicknesses of the first mixture material layer 1121 and the second mixture material layer 1122 is greater than or equal to 300 angstroms and less than or equal to 400 angstroms, and the thickness of the guest material layer 111 is greater than or equal to 1 angstrom and less than or equal to 5 angstroms. In one embodiment, the sum of the thicknesses of the first mixed material layer 1121 and the second mixed material layer 1122 is any one of 350 angstroms, 360 angstroms, 365 angstroms, and 370 angstroms, and the thickness of the guest material layer 111 is any one of 1 angstrom, 2 angstroms, 3 angstroms, 3.5 angstroms, and 4 angstroms. Thus, the guest material in the guest material layer 111 has less influence on the volume percentage of the guest material in the light-emitting layer 11, and thus the problem of quenching due to an excessively high doping concentration does not occur.
Fig. 4 is a schematic structural diagram of an organic light emitting device according to a second embodiment of the present application. As shown in fig. 4, the organic light emitting device 20 is different from the organic light emitting device 10 shown in fig. 1 in that, in the present embodiment, the number of guest material layers is two, and the two guest material layers are spaced apart and located at two side edge regions of the composite region Q, respectively.
Specifically, a part of the guest material is distributed in the structure of the first guest material layer 2111 and the second guest material layer 2112, and the rest of the guest material and the host material are distributed in the structure of the first mixed material layer 1121, the second mixed material layer 1122, and the third mixed material layer 1123. A first mixture material layer 1121, a first guest material layer 2111, a second mixture material layer 1122, a second guest material layer 2112, and a third mixture material layer 1123 are sequentially stacked. The composite region Q is formed of the first guest material layer 2111, the second mixed material layer 1122, and the second guest material layer 2112. In other examples, the composite region Q may also include a portion of the first mixed material layer 1121 and/or a portion of the third mixed material layer 1123.
In one embodiment, the spacing between the first guest material layer 2111 and the second guest material layer 2112, i.e., the thickness of the second mixed material layer 1122 is less than 70% and greater than or equal to 30% of the sum of the thicknesses of the first mixed material layer 1121, the second mixed material layer 1122, and the third mixed material layer 1123. For example, the thickness of the second mixed material layer 1122 is 30 angstroms, 40 angstroms, 50 angstroms, or the like.
The thicknesses of the first guest material layer 2111 and the second guest material layer 2112 may be equal or different. In one embodiment, the sum of the thicknesses of the first guest material layer 2111 and the second guest material layer 2112 is greater than or equal to 1 angstrom and less than or equal to 5 angstroms. In one embodiment, a ratio of thicknesses of the first guest material layer 2111 and the second guest material layer 2112 is greater than or equal to 1:4 and less than or equal to 4: 1.
According to the organic light emitting device provided by the embodiment, the two guest material layers are arranged in the light emitting layer and are respectively arranged in the two side edge regions of the recombination region, so that the contact probability of excitons and the guest material layers can be increased, and the light emitting efficiency of the organic light emitting device is further improved.
To more clearly describe the technical solution of the present application, fig. 5 is a main flow chart of a manufacturing method of the organic light emitting device 10 in fig. 1. The preparation method comprises the following steps:
step S510, a first mixed material layer is formed on the pre-substrate.
The pre-substrate comprises a first electrode layer, for example an anode. In one embodiment, the pre-substrate further includes a substrate stacked with the first electrode layer, and a hole injection layer, a hole transport layer, and an electron blocking layer sequentially stacked on a side of the first electrode layer away from the substrate.
The first mixed material layer refers to a film layer formed of a host material and a guest material doped as a dopant. The host material is, for example, a premixed material of a P-type organic material and an N-type organic material, and the guest material is, for example, a green phosphorescent material. In one embodiment, a first mixed material layer is formed on a pre-substrate using a doping evaporation process.
Step S520, forming a guest material layer on the first mixed material layer.
The guest material layer refers to a film layer formed of a guest material. For example, a guest material layer is formed on the first mixed material layer using an evaporation process.
Step S530 is to form a second mixed material layer on the guest material layer. For example, a second mixed material layer is formed on the guest material layer using an evaporation process.
In step S540, a second electrode layer is formed on the second mixed material layer to obtain an organic light emitting device. A second electrode layer, such as a cathode. In one embodiment, before forming the second electrode layer, an electron transport layer, an electron injection layer, and a hole blocking layer are sequentially formed on the second mixed material layer, and then the second electrode layer is formed on the hole blocking layer.
The application also provides a display screen comprising the organic light-emitting device provided by any one of the above embodiments.
The foregoing description has been presented for purposes of illustration and description. Furthermore, the description is not intended to limit embodiments of the application to the form disclosed herein. While a number of example aspects and embodiments have been discussed above, those of skill in the art will recognize certain variations, modifications, alterations, additions and sub-combinations thereof.
Claims (10)
1. An organic light-emitting device is characterized by comprising a light-emitting layer, wherein the light-emitting layer comprises a host material and a guest material, the host material and part of the guest material are mixed to form at least one mixed material layer, and the other part of the guest material forms at least one guest material layer.
2. The organic light-emitting device according to claim 1, wherein the light-emitting layer comprises a recombination region having a relative exciton concentration of not less than 20% of the highest relative exciton concentration in the light-emitting layer, and wherein the at least one guest material layer comprises a first guest material layer, the first guest material layer being located in the recombination region.
3. The organic light-emitting device according to claim 2, wherein the at least one mixed material layer comprises a first mixed material layer and a second mixed material layer, the first guest material layer, and the second mixed material layer are stacked in this order, and a ratio of thicknesses of the first mixed material layer and the second mixed material layer is greater than or equal to 3:7 and less than or equal to 7: 3.
4. The organic light-emitting device of claim 3, wherein the host material comprises a first host material and a second host material that are different, the first host material being located in the first mixed material layer and the second host material being located in the second mixed material layer.
5. The organic light-emitting device according to claim 3, wherein a thickness of the first guest material layer is less than or equal to 1/80 of a sum of thicknesses of the first mixture material layer and the second mixture material layer.
6. The organic light-emitting device according to claim 2, wherein the overall thickness of the light-emitting layer is greater than or equal to 300 angstroms and less than or equal to 500 angstroms; the first guest material layer has a thickness greater than or equal to 1 angstrom and less than or equal to 5 angstroms.
7. The organic light-emitting device according to claim 2, wherein the at least one guest material layer further comprises a second guest material layer disposed at an interval from the first guest material layer, and the second guest material layer and the first guest material layer are respectively located at two side edge regions of the recombination region.
8. The organic light-emitting device according to claim 7, wherein the at least one mixture material layer comprises a first mixture material layer, a second mixture material layer, and a third mixture material layer, and wherein the first mixture material layer, the first guest material layer, the second mixture material layer, the second guest material layer, and the third mixture material layer are stacked in this order.
9. The organic light-emitting device according to any one of claims 1 to 8, wherein the host material is a pre-mixed material of a P-type organic material and an N-type organic material, and the guest material is a phosphorescent material.
10. A display panel comprising the organic light-emitting device according to any one of claims 1 to 9.
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| CN202111525288.0A CN114220928A (en) | 2021-12-14 | 2021-12-14 | Organic light emitting device and display screen |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2023206674A1 (en) * | 2022-04-28 | 2023-11-02 | 武汉华星光电半导体显示技术有限公司 | Organic light-emitting display panel and organic light-emitting display device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2023206674A1 (en) * | 2022-04-28 | 2023-11-02 | 武汉华星光电半导体显示技术有限公司 | Organic light-emitting display panel and organic light-emitting display device |
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