CN113809229A - Spin orbit torque magnetic memory and preparation method thereof - Google Patents
Spin orbit torque magnetic memory and preparation method thereof Download PDFInfo
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Abstract
The invention discloses an SOT-MRAM and a preparation method thereof, relating to the field of tunneling magnetoresistance, wherein the spin orbit torque magnetic memory comprises: the bottom electrode layer and set up in the magnetic tunnel junction on the bottom electrode layer, wherein, the bottom electrode layer includes substrate and heavy metal layer, heavy metal layer set up in the substrate upper surface, the magnetic tunnel junction includes the free layer, the free layer is provided with the inner chamber, free layer inner chamber parcel heavy metal layer. Therefore, according to the technical scheme, the SOT-MRAM heavy metal layer and the free layer are in wrapped design, the free layer is in contact with at least two end faces of the heavy metal layer, and then when the heavy metal layer is electrified, the end faces, in contact with the heavy metal layer and the free layer, of the heavy metal layer can generate spin currents, so that the multi-directional spin currents can be generated, and the SOT critical overturning current density can be reduced.
Description
Technical Field
The embodiment of the invention relates to the field of electronics, in particular to a spin-orbit torque magnetic memory and a preparation method thereof.
Background
With the continuous development and maturity of the development process of emerging memories, the market puts higher requirements on the memories, especially higher requirements on the storage density and the speed. Magnetic Random Access Memories (MRAMs), including Spin Orbit Torque Magnetic Random Access memories (SOT-MRAMs), have become the most potential Memory for replacing embedded storage (eFlash) due to their advantages of high storage density, low energy consumption, non-volatility, and the like.
In general, in the SOT-MRAM, a heavy metal layer structure is added below a free layer in an original three-layer film structure of a free layer, an oxide layer and a fixed layer to form a basic structure of a heavy metal layer/a free layer/an oxide layer (a nonmagnetic barrier layer). When in-plane current is introduced into the heavy metal layer, unbalanced spin accumulation is induced by utilizing the interaction between electron spin and an orbit, so that spin current perpendicular to the current direction is formed. Spin-polarized current entering the Free Layer (FL) rapidly interacts with the local magnetic moment to generate a spin-orbit torque, which induces the magnetic moment to flip if a critical current is reached.
In the conventional SOT-MRAM structure, since only one side of the free layer is in contact with the heavy metal layer, only one direction of spin of the heavy metal layer can be utilized in the spin current generation process. The structure has low current utilization rate in the overturning process, and the overturning free layer can be realized only by applying larger current in the heavy metal layer. Therefore, the power consumption generated by the device in the process is larger, which is contrary to the requirement of reducing the critical inversion current density in practice.
Disclosure of Invention
The embodiment of the invention provides an SOT-MRAM and a preparation method thereof, which can improve the spin utilization rate of the SOT-MRAM when spin current is generated, thereby reducing the density of the switching current.
In order to solve the above-described problems, a first aspect of the present invention proposes a spin orbit torque magnetic memory including: a bottom electrode layer and a magnetic tunnel junction 4 arranged above said bottom electrode layer,
wherein, the bottom electrode layer contains substrate 1 and heavy metal layer 2, heavy metal layer 2 set up in the upper surface of substrate 1, magnetic tunnel junction 4 includes free layer 3, free layer 3 is provided with the inner chamber, 3 inner chambers of free layer parcel heavy metal layer 2, so that heavy metal layer 2 have two contact surfaces at least with the inner wall contact of 3 inner chambers of free layer.
In some embodiments, at least two end faces of the heavy metal layer 2 perpendicular to the substrate have a lateral length of less than 100 nanometers (nm).
In some embodiments, the magnetic tunnel junction 4 further comprises a non-magnetic barrier layer, a fixed layer and a capping layer, wherein the free layer 3 wraps the outer surface of the metal layer 2 and is disposed on the substrate 1, the non-magnetic barrier layer is disposed on the free layer 3, and the capping layer is disposed on the top layer of the magnetic tunnel junction 4.
In some embodiments, the magnetic tunnel junction 4 further comprises: a pinned layer and an antiferromagnetic layer, the pinned layer being located above the fixed layer, the antiferromagnetic layer being located above the pinned layer, and the capping layer being located below the capping layer, wherein the fixed layer, the pinned layer and the antiferromagnetic layer serve as an artificial antiferromagnetic coupling layer 5.
In some embodiments, the heavy metal layer 2 comprises two opposing cross sections in a direction perpendicular to the substrate, wherein current flows from one cross section to the other.
In some embodiments, the heavy metal layer 2 material category selection includes: heavy metal simple substance, heavy metal oxide, heavy metal nitride, alloy, antiferromagnetic magnetic material, crystal film, polycrystalline film, amorphous film, foreign semimetal, two-dimensional electron gas and non-magnetic metal simple substance, heavy metal simple substance and non-magnetic metal simple substance include at least: ta (tantalum), W (tungsten), Pt (platinum), Pd (palladium), Hf (hafnium), Au (gold), Mo (molybdenum), and Ti (titanium);
the material of the heavy metal layer 2 can also be selected from oxide or nitride which can generate metal with a self-selected Hall angle, and the oxide or nitride which can generate metal with a self-selected Hall angle comprises: WO (tungsten oxide), WN (tungsten nitride) and mixed layer structure WO/WN, the thickness is 1 to 10 nm;
the material of the heavy metal layer 2 can also be selected from alloys of metals with different atomic ratios, which can generate self-selected Hall angles, and at least comprises Au0.93W0.07、Au0.9Ta0.1、AuxPt100-x1 to 10nm thick;
the top heavy metal layer 2 material can also select the anti-ferromagnetic magnetic material for use, and the anti-ferromagnetic magnetic material includes: IrMn, PtMn, FeMn, PdMn, L10-IrMn、poly-IrMn；
The material of the top heavy metal layer 2 can also be selected from a crystal film, a polycrystalline film, an amorphous film, a peril semimetal or other structures capable of generating spin current, and at least comprises: bi2Se3、Bi2Te3、Sb2Te3、(BixSb1-x)2Te3、BixSe1-x、WTe2、MoTe2、MoxW1-xTe2And a two-dimensional electron gas having a thickness of 0.5 to 10 nm.
In a second aspect of the present application, there is also provided a method of manufacturing a spin orbit torque magnetic memory, the steps including:
building a heavy metal layer on the bottom electrode layer;
etching a heavy metal layer on the upper surface of the substrate;
constructing a magnetic tunnel junction film layer structure on the surfaces of the substrate and the heavy metal layer;
and etching a complete magnetic tunnel junction on the surface of the free layer.
In some embodiments, building the bottom heavy metal layer over the bottom electrode layer includes building the heavy metal layer over the bottom electrode layer using sputtering.
In some embodiments, the step of forming the magnetic tunnel junction film layer on the surfaces of the substrate and the heavy metal layer includes forming the magnetic tunnel junction film layer on the surfaces of the substrate and the heavy metal layer by sputtering.
In some embodiments, the free layer may be formed by sputtering, and the free layer is provided with a cavity inside, and the nanowire-shaped heavy metal layer is placed in the cavity and completely attached to the cavity.
In some embodiments, the process of processing the magnetic tunnel junction film layer structure into a magnetic tunnel junction can be implemented by the following three ways: gluing, developing and etching.
The embodiment of the invention provides an SOT-MRAM with a multi-layer heavy metal layer structure and a preparation method thereof. And current is introduced into two ends of the nanowire heavy metal layer, and the heavy metal layer and the free layer are in a semi-surrounding state, so that multidirectional spin current can be generated at the interface of the heavy metal layer and the free layer in the electrifying process, SOT (spin on temperature) overturning is facilitated, and the SOT critical overturning current density is reduced.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the description of the embodiments of the present invention will be briefly introduced below. It is to be understood that the drawings in the following description are of some embodiments of the application only.
FIG. 1a is a schematic diagram of an exemplary SOT-MRAM architecture according to the present invention;
FIG. 1b is a schematic diagram of spin current generation based on the SOT-MRAM illustrated in FIG. 1 a;
FIG. 2a is a schematic diagram of a magnetic tunnel junction structure of a nanowire-type heavy metal layer structure according to an embodiment of the present invention;
FIG. 2b is a schematic diagram illustrating the spin current direction after the nanowire-type heavy metal layer structure is powered on according to an embodiment of the invention;
FIG. 2c is a schematic diagram illustrating the spin flow direction after the magnetic tunnel junction of the nanowire-type heavy metal layer structure is powered on according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a SOT-MRAM substrate structure according to an embodiment of the invention;
FIG. 4 is a schematic diagram of a nanowire-type heavy metal structure according to an embodiment of the present invention;
FIG. 5 is a schematic view of a magnetic tunnel junction film layer profile according to one embodiment of the present invention;
FIG. 6 is a schematic diagram of a magnetic tunnel junction silicon dioxide fill structure according to an embodiment of the present invention;
FIG. 7 is a schematic diagram of a magnetic tunnel junction structure after etching according to an embodiment of the invention.
Detailed Description
In order to make the objects, features and advantages of the present invention more apparent and understandable, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is apparent that the described embodiments are only a part of the embodiments of the present application, and not all the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
It will be understood by those within the art that the terms "first", "second", etc. in this application are used only to distinguish one device, module, parameter, etc., from another, and do not denote any particular technical meaning or necessary order therebetween.
As shown in FIG. 1a, a typical SOT-MRAM core structure includes: heavy metal layer from bottom to top, free layer, non-magnetic barrier layer, fixed layer, antiferromagnetically coupled layer, pinned layer and cover layer. Wherein the heavy metal layer generates a spin hall effect. Spin (Spin) is an inherent angular momentum of electrons, Spin hall effect means that under the condition of no external magnetic field, an electric field is applied, a non-polarized current is injected, electrons which Spin up and Spin down move in opposite directions as shown in fig. 1b, however, the number of charges which move up and down are equal, and therefore no net current flows, the main cause of Spin hall effect is based on the interaction result of Spin Orbit Coupling (SOC) of electrons in the material, namely the "Spin angular momentum" and the "Orbit angular momentum" of electrons, and therefore, the strength of the Spin hall effect result degree has a strong correlation with the selection of the used sample material. In the application of SOT-MRAM field, SOT-MRAM passes an in-plane current in the heavy metal layer, and utilizes the interaction between electron spin and orbit to generate unbalanced spin accumulation, so as to form spin current perpendicular to the current direction. The spin-polarized current entering the free layer rapidly interacts with the local magnetic moment to generate a spin-orbit torque (or a field) that induces a magnetic moment to flip if a critical current is reached. SOT-MRAM is capable of producing strong Spin-orbit coupling due to the Spin-orbit torque effect of heavy metal layers, the Spin source often having a certain Spin-to-charge conversion efficiency, i.e., Spin Hall Angle (SHA).
Generally, the pinned layer is not easily changed by an external stimulus because the magnetic moment is fixed in one direction, and the direction of the magnetic moment of the free layer can be changed by spin current excitation induced by an SOT current, thereby being switched in two directions of the easy magnetization axis. The change in direction is characterized by the high and low resistance states of the MTJ, which can be used to represent the state of a stored data "1" or "0" in the magnetic memory field.
In general, in the SOT-MRAM structure shown in FIG. 1a, since the free layer and the heavy metal layer are in contact with each other on only one side, only one direction of spin of the heavy metal layer can be used in the spin current generation process, as shown in FIG. 1 b. The structure has low current utilization rate in the overturning process, and the overturning free layer can be realized only by applying larger current in the heavy metal layer. Therefore, the process generates more power consumption for the device, and generates more thermal effect, which is contrary to the actual demand of reducing the critical inversion current density.
In one embodiment of the present application, in order to ensure that the current utilization rate of the magnetic tunnel junction is improved during the power-on switching process, the SOT-MRAM is constructed by using a wrapped heavy metal layer.
The structure of the nanowire-type heavy metal layer SOT-MRAM shown in FIG. 2a is schematic, and the SOT-MRAM comprises: a bottom electrode layer and a magnetic tunnel junction 4 arranged above said bottom electrode layer,
the bottom electrode layer comprises a substrate 1 and a heavy metal layer 2, the heavy metal layer 2 is arranged on the upper surface of the substrate 1, the magnetic tunnel junction 4 comprises a free layer 3, the free layer 3 is provided with an inner cavity, the free layer 3 is wrapped by the inner cavity of the heavy metal layer 2, and therefore at least two contact surfaces of the heavy metal layer 2 are in contact with the inner wall of the inner cavity of the free layer 3.
Optionally, at least two end faces of the heavy metal layer 2 perpendicular to the substrate have a lateral length smaller than 100 nanometers (nm).
Optionally, the inner cavities of the heavy metal layer 2 and the free layer 3 are completely attached.
Alternatively, the heavy metal layer 2 comprises two opposite cross sections in a direction perpendicular to the substrate, wherein current flows from one cross section to the other.
In the application, due to the introduction of the nanowire-type heavy metal layer structure and the free layer structure containing the inner cavity, the heavy metal layer 2 and the free layer 3 have more contact surfaces with angles, and therefore have more angular spin current forming directions. The spin current formation direction is as shown in FIG. 2b, so that the spin current has a spin orbit torque of more angles. Therefore, the nanowire heavy metal layer structure has the possibility of multi-angle application to the spin-orbit torque, so that the overall SOT-MRAM structure is more favorable for realizing the flipping action, for example, as shown in FIG. 2 c. Thus, the spin utilization rate of the heavy metal layer 2 is improved, and the switching current density is reduced.
In one embodiment of the present application, in order to ensure that the nanowire-type heavy metal layer can realize effective turning action in the power-on process, the construction material of the nanowire-type heavy metal layer is screened and limited.
Optionally, the selecting of the material type of the heavy metal layer 2 includes: heavy metal simple substance, heavy metal oxide, heavy metal nitride, alloy, antiferromagnetic magnetic material, crystal film, polycrystalline film, amorphous film, peril semimetal, two-dimensional electron gas and non-magnetic metal simple substance.
Optionally, the heavy metal simple substance includes: ta (tantalum), W (tungsten), Pt (platinum), Pd (palladium), Hf (hafnium), Au (gold), Mo (molybdenum), and Ti (titanium).
Optionally, the oxide or nitride capable of generating the self-selected hall angle metal comprises: WO (tungsten oxide), WN (tungsten nitride) and mixed layer structure WO/WN, with a thickness of 1 to 10 nm.
Optionally, the alloy of different atomic ratios of the metals capable of generating the self-selected Hall angle at least comprises Au0.93W0.07、Au0.9Ta0.1、AuxPt100-xAnd the thickness is 1 to 10 nm.
Optionally, the antiferromagnetic magnetic material includes: IrMn, PtMn, FeMn, PdMn, Ll0-IrMn、poly-IrMn。
Optionally, the crystalline thin film, polycrystalline thin film, amorphous thin film, epi-semimetal or other spin-current generating structure includes: bi2Se3、Bi2Te3、Sb2Te3、(BixSb1-x)2Te3、BixSe1-x、WTe2、MoTe2、MoxW1-xTe2And a two-dimensional electron gas having a thickness of 0.5 to 10 nm.
Optionally, the heavy metal layer 2 may be formed by sputtering.
Further, a magnetic tunnel junction 4 is disposed on the heavy metal layer 2, the magnetic tunnel junction 4 includes the free layer 3, a non-magnetic barrier layer, a fixed layer and a capping layer, wherein the free layer 3 wraps the outer surface of the metal layer 2 and is disposed on the substrate 1, the non-magnetic barrier layer is disposed on the free layer and the fixed layer, the free layer is a non-magnetic barrier layer, and the capping layer is disposed on the top layer of the magnetic tunnel junction.
In other embodiments, as shown in fig. 2a, the film layer structure of the magnetic tunnel junction 4 includes, from bottom to top: free Layer (FL), nonmagnetic barrier Layer (MgO, magnesium oxide), Synthetic antiferromagnetically coupled Layer (SAF) 5, and capping Layer (Top, Mental). The structure of the artificial antiferromagnetic coupling Layer 5 is shown in fig. 2a, and includes a fixed Layer (RL), an antiferromagnetic Layer and a pinning Layer.
Optionally, the ferromagnetic material of the free layer or the fixed layer may be CoFeB, CoFe, Co, or a combination of different components of the foregoing three materials, and at least includes: co20Fe60B20、Co40Fe40B20、Co60Fe20B20、Co70Fe30、Co75Fe25Or Co85Fe15。
Optionally, the nonmagnetic barrier layer material at least comprises: MgO and Al2O3。
In one embodiment of the present application, there is provided a method for fabricating a SOT-MRAM of a nanowire-type heavy metal layer structure, comprising the steps of:
a heavy metal layer is built on top of the bottom electrode layer.
The bottom heavy metal layer can be constructed by adopting a sputtering process, and the effect after sputtering is shown in fig. 3. The sputtering process is a process of bombarding the surface of a solid with particles (particles or neutral atoms, molecules) with certain energy to make the atoms or molecules near the surface of the solid obtain enough energy to finally escape from the surface of the solid, and the sputtering process can be performed only under a certain vacuum state, and the growth of the mixed heavy metal layer here constitutes an optional sputtering process, but is not limited to this scheme, and other modes are also applicable.
Optionally, the sputtering process for growing and constructing the mixed heavy metal layer includes, but is not limited to, two-stage sputtering, three-stage sputtering or four-stage sputtering, magnetron sputtering, target sputtering, radio frequency sputtering, bias sputtering, asymmetric alternating current radio frequency sputtering, ion beam sputtering, reactive sputtering, and the like;
optionally, the metal material with a spin hall angle at least includes: w, Pt, Ta;
optionally, the bottom metal layer 1 may be formed by sputtering, and N may be introduced during sputtering2To obtain an amorphous material of the sputtered metal. Optionally, the selecting of the material type of the heavy metal layer 2 includes: elemental heavy metals, heavy metal oxides, heavy metalsMetal nitrides, alloys, antiferromagnetic magnetic materials, crystalline thin films, polycrystalline thin films, amorphous thin films, peril semimetals, two-dimensional electron gases, and non-magnetic elemental metals.
Optionally, the heavy metal simple substance includes: ta (tantalum), W (tungsten), Pt (platinum), Pd (palladium), Hf (hafnium), Au (gold), Mo (molybdenum), and Ti (titanium).
Optionally, the oxide or nitride capable of generating the self-selected hall angle metal comprises: WO (tungsten oxide), WN (tungsten nitride) and mixed layer structure WO/WN, with a thickness of 1 to 10 nm.
Optionally, the alloy of different atomic ratios of the metals capable of generating the self-selected Hall angle at least comprises Au0.93W0.07、Au0.9Ta0.1、AuxPt100-xAnd the thickness is 1 to 10 nm.
Optionally, the antiferromagnetic magnetic material includes: IrMn, PtMn, FeMn, PdMn, Ll0-IrMn、poly-IrMn。
Optionally, the crystalline thin film, polycrystalline thin film, amorphous thin film, epi-semimetal or other spin-current generating structure includes: bi2Se3、Bi2Te3、Sb2Te3、(BixSb1-x)2Te3、BixSe1-x、WTe2、MoTe2、MoxW1-xTe2And a two-dimensional electron gas having a thickness of 0.5 to 10 nm.
And etching the heavy metal layer on the upper surface of the substrate.
The nano heavy metal layer structure constructed by the heavy metal layer can be obtained by adopting photoetching or etching process.
Constructing a magnetic tunnel junction film layer structure on the surfaces of the substrate and the heavy metal layer;
optionally, the free layer may be formed by sputtering, where the sputtering process is a process of bombarding a solid surface with particles (particles or neutral atoms, molecules) with a certain energy, so that the atoms or molecules near the solid surface obtain a sufficiently large energy and finally escape from the solid surface, and the sputtering process may be performed only in a certain vacuum state, where the mixed heavy metal layer growth forms the optional sputtering process, but is not limited to this scheme, and other modes may also be applicable.
Optionally, the sputtering process for growing and constructing the hybrid heavy metal layer includes, but is not limited to, two-stage sputtering, three-stage sputtering or four-stage sputtering, magnetron sputtering, target sputtering, radio frequency sputtering, bias sputtering, asymmetric alternating current radio frequency sputtering, ion beam sputtering, reactive sputtering, and the like.
And etching a complete magnetic tunnel junction on the surface of the free layer.
And etching the free layer to the substrate through the operations of gluing, developing, etching and the like in a plurality of steps, and keeping the free layer to wrap the heavy metal layer structure.
Optionally, the etching process fills silicon dioxide into two different magnetic tunnel junctions of the same substrate to manufacture the magnetic tunnel junctions and ensure the magnetic tunnel junctions to be insulated from each other, and the effect is shown in fig. 6.
In an alternative embodiment of the present application, a CMOS wafer of a ready-made BEOL is selected as a substrate, and the heavy metal layer 2 is sputtered thereon, wherein the material of the heavy metal layer 2 is W (tungsten), and the film thickness is 5 nm.
And etching the heavy metal layer to a nanowire structure by a photoetching/etching process.
Optionally, the width dimension of the heavy metal layer is kept between 10 and 20nm, and the length dimension is kept between 50 and 200 nm.
And completing the construction of the complete magnetic tunnel junction film layer by a sputtering mode, as shown in figure 5.
And etching the magnetic tunnel junction film layer structure to the free layer through gluing, developing and etching operations, and filling silicon dioxide at the magnetic tunnel junction interval, wherein the effect after filling is as shown in figure 6.
And etching the free layer to the substrate through the operations of gluing, developing and etching, wherein the free layer is kept to wrap the heavy metal layer structure in the period, and the effect after etching is shown in figure 7.
The embodiment of the invention provides an SOT-MRAM with a multi-layer heavy metal layer structure and a preparation method thereof. And current is introduced into two ends of the nanowire heavy metal layer, and the heavy metal layer and the free layer are in a semi-surrounding state, so that multidirectional spin current can be generated at the interface of the heavy metal layer and the free layer in the electrifying process, SOT (spin on temperature) overturning is facilitated, and the SOT critical overturning current density is reduced.
The above description is only exemplary of the present invention and should not be taken as limiting the scope of the present invention, and any modifications, equivalents, improvements, etc. that are within the spirit and principle of the present invention should be included in the present invention.
Claims (10)
1. A spin orbit torque magnetic memory, comprising: a bottom electrode layer and a magnetic tunnel junction (4) arranged above said bottom electrode layer,
the bottom electrode layer comprises a substrate (1) and a heavy metal layer (2), the heavy metal layer (2) is arranged on the upper surface of the substrate (1), the magnetic tunnel junction (4) comprises a free layer (3), the free layer (3) is provided with an inner cavity, the free layer (3) is wrapped by the inner cavity of the heavy metal layer (2), and therefore at least two contact surfaces of the heavy metal layer (2) are in contact with the inner wall of the inner cavity of the free layer (3).
2. The spin-orbit torque magnetic memory according to claim 1, wherein the length of at least two end faces of the heavy metal layer (2) perpendicular to the substrate in a direction parallel to the substrate is less than 100 nm.
3. The spin-orbit torque magnetic memory according to claim 1, wherein the magnetic tunnel junction (4) further comprises a nonmagnetic barrier layer, a fixed layer and a capping layer,
wherein, the free layer (3) is wrapped on the outer surface of the heavy metal layer (2) and is arranged on the substrate (1), the nonmagnetic barrier layer is arranged on the free layer (3), and the covering layer is arranged on the nonmagnetic barrier layer.
4. Spin-orbit torque magnetic memory according to claim 1, characterized in that the heavy metal layer (2) comprises two opposite cross sections in the direction perpendicular to the substrate, wherein the current flows from one cross section to the other.
5. The spin-orbit torque magnetic memory of claim 1, wherein the class of heavy metal layer (2) materials includes at least one of: heavy metal simple substance, heavy metal oxide, heavy metal nitride, alloy, antiferromagnetic magnetic material, crystal film, polycrystalline film, amorphous film, peril semimetal, two-dimensional electron gas and non-magnetic metal simple substance.
6. A method of fabricating a spin-orbit torque magnetic memory, the method comprising:
building a heavy metal layer on the bottom electrode layer;
etching a heavy metal layer on the upper surface of the substrate;
constructing a magnetic tunnel junction film layer structure on the surfaces of the substrate and the heavy metal layer;
and etching a complete magnetic tunnel junction on the surface of the free layer.
7. The method of claim 6, wherein forming the bottom heavy metal layer over the bottom electrode layer comprises forming a heavy metal layer over the bottom electrode by sputtering.
8. The method of claim 7, wherein forming the magnetic tunnel junction layer on the surfaces of the substrate and the heavy metal layer comprises forming the magnetic tunnel junction film layer on the surfaces of the substrate and the heavy metal layer by sputtering.
9. The method of claim 7, wherein the free layer is formed by sputtering and has a cavity inside, and the nanowire-type heavy metal layer is disposed in and completely attached to the cavity.
10. The method of claim 7, wherein the magnetic tunnel junction is constructed by three ways: gluing, developing and etching.
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