CN112397638A - Memory cell, preparation method thereof and memory - Google Patents
Memory cell, preparation method thereof and memory Download PDFInfo
- Publication number
- CN112397638A CN112397638A CN201910745488.3A CN201910745488A CN112397638A CN 112397638 A CN112397638 A CN 112397638A CN 201910745488 A CN201910745488 A CN 201910745488A CN 112397638 A CN112397638 A CN 112397638A
- Authority
- CN
- China
- Prior art keywords
- layer
- connecting surface
- hall effect
- spin hall
- memory cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/101—Semiconductor Hall-effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/01—Manufacture or treatment
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D10/00—Energy efficient computing, e.g. low power processors, power management or thermal management
Abstract
The invention discloses a storage unit, a preparation method thereof and a storage. Wherein, this memory cell includes: the spin Hall effect layer comprises a body and a boss, the boss is provided with a boss connecting surface, the body is provided with a body connecting surface, and the boss connecting surface is connected with the body connecting surface; the magnetic tunnel junction is arranged on the spin Hall effect layer and comprises a free layer, and the free layer is arranged on the surface of the spin Hall effect layer and at least covers part of the protruding connection surface; and the electrode is arranged on the surface of the magnetic tunnel junction, which is far away from the spin Hall effect layer, wherein the magnetization directions of the free layer of the convex connection surface and the body connection surface are different, and a bias magnetic field is formed in the magnetization direction of the free layer of the body connection surface. The invention solves the technical problems that the memory in the related art can realize magnetic moment overturning only by destroying space inversion symmetry through an external magnetic field, and has complex operation and larger power consumption.
Description
Technical Field
The invention relates to the field of memories, in particular to a storage unit, a preparation method thereof and a memory.
Background
Magnetic Random Access Memory (MRAM), which is referred to as MRAM, has the advantages of long lifetime, low power consumption, and non-volatility, and is mainly switched between different resistances by flipping the magnetization direction of the free layer to be parallel or anti-parallel to the magnetization direction of the reference layer.
The current third generation magnetic random access memory MRAM is a spin orbit torque magnetic memory (SOT-MRAM for short), has all the advantages of a spin transfer torque magnetic random access memory (STT-MRAM) and improves the writing speed and reduces the power consumption, and the spin orbit torque magnetic memory adopts the principle that the spin Hall effect is utilized to complete the magnetic moment overturning, thereby completing the reading and writing of data files and realizing the near infinite erasing and writing.
The spin orbit torque magnetic memory designed at present only utilizes the spin hall effect, cannot completely flip the magnetic moment of a free layer in the memory, and needs extra torque to destroy the space inversion symmetry, for example, a bias magnetic field is applied through an external electric field, so that the complete flip of the magnetic moment of the free layer is completed.
In view of the above problems, no effective solution has been proposed.
Disclosure of Invention
The embodiment of the application provides a storage unit, a preparation method thereof and a storage, and aims to at least solve the technical problems that in the related art, the storage needs an external magnetic field to destroy the space inversion symmetry to realize magnetic moment overturning, the operation is complex and the power consumption is large.
According to an aspect of an embodiment of the present application, there is provided a memory cell including at least: the spin Hall effect layer comprises a body and a boss, the boss is provided with a boss connecting surface, the body is provided with a body connecting surface, and the boss connecting surface is connected with the body connecting surface; the magnetic tunnel junction is arranged on the spin Hall effect layer and comprises a free layer, and the free layer is arranged on the surface of the spin Hall effect layer and at least covers part of the raised connecting surface; and the electrode is arranged on the surface of the magnetic tunnel junction, which is far away from the spin Hall effect layer, wherein the magnetization directions of the free layers of the convex connection surface and the body connection surface are different, and a bias magnetic field is formed in the magnetization direction of the free layer of the body connection surface.
Optionally, an included angle between at least one of the protrusion connecting surface and the body connecting surface is greater than 90 ° and less than 180 °.
Optionally, the magnetic tunnel junction comprises at least a free layer, a barrier layer, and a fixed layer stacked in order along a direction away from the spin hall effect layer.
Optionally, the free layer includes a first free portion and a second free portion, the first free portion covers the convex connection face, and the barrier layer includes a first barrier portion and a second barrier portion connected to each other, wherein the first barrier portion is located on a surface of the first free portion away from the convex connection face, and the fixed layer covers both the first barrier portion and the second barrier portion, or the fixed layer covers only the second barrier portion.
Optionally, the free layer and the fixed layer are in a perpendicular magnetization structure; or the free layer and the fixed layer are in-plane magnetization structures, wherein the magnetization direction of the perpendicular magnetization structure is parallel to the thickness direction of the memory cell, and the magnetization direction of the in-plane magnetization structure is perpendicular to the thickness direction of the memory cell.
Optionally, the magnetic tunnel junction MTJ further includes a coupling layer and a pinning layer stacked in this order in a direction away from the fixed layer, wherein the coupling layer is disposed on a surface of the fixed layer away from the barrier layer.
Optionally, the spin hall effect layer is provided as a trench structure, and portions of the magnetic tunnel junction are provided at the bottom and edges of the trench.
According to another aspect of the embodiments of the present application, there is also provided a method for manufacturing a memory, including: carrying out first deposition treatment on nonmagnetic metal on a substrate, and etching the spin Hall effect layer of the nonmagnetic metal by a preset etching technology to obtain a boss and a body, wherein the boss is provided with a boss connecting surface, the body is provided with a body connecting surface, and the boss connecting surface is connected with the body connecting surface; carrying out secondary deposition treatment on each layer of material and electrode of the magnetic tunnel junction, and grinding each layer of material and electrode of the magnetic tunnel junction to enable the electrode to be flat, wherein the magnetic tunnel junction is arranged on the spin Hall effect layer; and removing the material on the upper part of the connecting surface of the body by a preset etching technology, and reserving the material right above the upper surface of the spin Hall effect layer and the convex connecting surface to obtain the target storage unit.
According to another aspect of the embodiments of the present application, there is also provided a memory, including a storage unit, where the storage unit is any one of the storage units described above.
Optionally, the memory is a magnetic random access memory.
According to another aspect of the embodiments of the present application, there is also provided an operating method of a memory, which is applied to the above memory, the operating method including: performing a write data operation and/or a read data operation using the memory, wherein the write data operation comprises: the current passes through the spin Hall effect layer and does not pass through the magnetic tunnel junction; the magnetization directions of a convex connecting surface of a spin Hall effect layer of the memory and a free layer of a body connecting surface are different, and a bias magnetic field is formed in the magnetization direction of the free layer of the body connecting surface, wherein the spin Hall effect layer comprises a body and a convex part, the convex part is provided with a convex connecting surface, the body is provided with a body connecting surface, and the convex connecting surface is connected with the body connecting surface; based on the bias magnetic field, the magnetic moment can be turned over by introducing current, and data writing is completed; the read data operation includes: passing a current through the magnetic tunnel junction; and finishing reading data according to the high and low of the resistance.
In the embodiment of the invention, the irregular shape formed by the body and the protruding part of the spin Hall effect layer is utilized to prepare the magnetic tunnel junction on the upper surface and the protruding connecting surface of the spin Hall effect layer, the magnetization directions of the free layers of the protruding connecting surface and the body connecting surface are different, a bias magnetic field is formed in the magnetization direction of the free layer of the body connecting surface, an external magnetic field is not needed (namely external torque is not needed to destroy the space inversion symmetry), the current direction is perpendicular to the paper surface, the magnetic moment overturning of the free layer can be realized by flowing through the spin Hall effect layer, the operation is simple, the power consumption is low, and the technical problems that the magnetic moment overturning can be realized only by destroying the space inversion symmetry by the external magnetic field in a memory in the related technology, the operation is.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the invention and together with the description serve to explain the invention without limiting the invention. In the drawings:
FIG. 1 is a schematic diagram of a memory cell according to an alternative embodiment of the present application;
FIG. 2 is a first schematic diagram illustrating a structure of a memory cell according to an alternative embodiment of the present application;
FIG. 3 is a schematic diagram of a second structure for providing a memory cell according to an alternative embodiment of the present application;
FIG. 4 is a flow chart of a method of fabricating a memory according to an alternative embodiment of the present application;
FIG. 5 is a schematic diagram of one embodiment of a memory cell of the present application;
fig. 6 is a flowchart of an operating method of a memory provided according to an embodiment of the present application.
Detailed Description
In order to make the technical solutions of the present invention better understood, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of example embodiments according to the present application. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, and it should be understood that when the terms "comprises" and/or "comprising" are used in this specification, they specify the presence of stated features, steps, operations, devices, components, and/or combinations thereof, unless the context clearly indicates otherwise.
It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" another element, it can be directly on the other element or intervening elements may also be present. Also, in the description and claims that follow, when an element is described as being "connected" to another element, the element may be "directly connected" to the other element or "electrically connected" to the other element through a third element.
To facilitate the understanding of the present invention by the user, some terms or nouns referred to in the embodiments of the present application are explained below:
magnetic random access memory, abbreviated MRAM, refers to a random access memory that stores data with magnetoresistive properties, and records 0 and 1 using different magnetoresistance caused by different magnetization directions, and the magnetization directions do not change as long as an external magnetic field does not change.
Spin Orbit Torque magnetic memory (STT-MRAM) is a third generation magnetic memory that uses Spin Orbit Torque (SOT) effect to flip the magnetic moment of the free layer in a Magnetic Tunnel Junction (MTJ).
The spin hall effect, SHE for short, is a bulk effect derived from heavy metals. When in-plane current is injected into the heavy metal, strong spin-orbit coupling causes electrons with spin-up and spin-down to collect equally on both sides of the vertical direction, with no net charge flow, but spin imbalance. The following provides a detailed description of various embodiments of the invention.
Memories to which the memory cells of the following embodiments may be applied include, but are not limited to: STT-MRAM, SOT-MRAM.
In an exemplary embodiment of the present application, a memory cell is provided.
Fig. 1 is a schematic structural diagram of a memory cell provided according to an alternative embodiment of the present application, as shown in fig. 1, the memory cell at least includes: the spin Hall effect layer (10)/SHE layer (10) comprises a body (101) and a boss (102), wherein the boss is provided with a boss connecting surface, the body is provided with a body connecting surface, and the boss connecting surface is connected with the body connecting surface; the magnetic tunnel junction (11) is arranged on the spin Hall effect layer and comprises a free layer (111), wherein the free layer is arranged on the surface of the spin Hall effect layer and at least covers part of the protruding connection surface; and the electrode (12) is arranged on the surface of the magnetic tunnel junction, which is far away from the spin Hall effect layer, wherein the magnetization directions of the free layer of the convex connection surface and the body connection surface are different, and a bias magnetic field is formed in the magnetization direction of the free layer of the body connection surface.
In the embodiment of the application, the irregular shape formed by the body and the convex part of the spin Hall effect layer (10) is utilized, the magnetic tunnel junction is prepared on the upper surface and the convex connecting surface of the spin Hall effect layer (10) to form a bias magnetic field vertical to the magnetization direction of the free layer on the upper surface, an external magnetic field is not needed (namely, external torque is not needed to destroy the space inversion symmetry), in FIG. 1, black arrows indicate the magnetization direction of the free layer, the magnetization direction of the free layer at the bump-connected surface is different from that at the body-connected surface, a bias magnetic field is formed in the magnetization direction of the free layer of the connection surface of the body, the current direction is vertical to the paper surface and flows through the spin Hall effect layer (10), the magnetic moment upset of free layer can be realized, easy operation and consumption are lower to solve the memory and need outside magnetic field destruction space inversion symmetry among the correlation technique, could realize the magnetic moment upset, operate complicated and the great technical problem of consumption.
In the embodiment of the present application, there may be one or two protrusion connecting surfaces, and an included angle between at least one protrusion connecting surface and the body connecting surface is greater than 90 ° and less than 180 °. When only one convex connecting surface is arranged, the included angle between the convex connecting surface and the connecting surface of the body is more than 90 degrees and less than 180 degrees; when more than two boss connecting surfaces are arranged, the included angle between at least one boss connecting surface and the body connecting surface is more than 90 degrees and less than 180 degrees; as shown in fig. 1, the convex connection surface is illustrated as one, that is, a convex connection surface is disposed on the left side of the spin hall effect layer (10), and the connection manner of the convex connection surface and the body connection surface may be not only outward connection shown in fig. 1 (that is, the included angle between the convex connection surface and the body connection surface is greater than 90 ° and less than 180 °). In addition, the spin Hall effect layer can be also arranged into a groove structure, the magnetic tunnel junction is arranged at the bottom and the edge of the groove, a bias magnetic field can be realized through the groove structure, and the magnetic moment overturning without an external magnetic field is realized. When the number of the protruding connection surfaces is two, one protruding connection surface is arranged on each of the left side and the right side of the spin Hall effect layer (10), and the positions formed by the two protruding connection surfaces can be asymmetrically arranged, so that the wedge-shaped structures formed by the body and the protruding parts are asymmetric on the two sides, the formed gradient is slow, and Magnetic Tunnel Junction (MTJ) materials are deposited when the Magnetic Tunnel Junction (MTJ) is prepared subsequently. The wedge-shaped structural units can also be repeatedly prepared into arrays.
The body and the protruding part of the spin Hall effect layer (10) form a wedge-shaped structure, a bias magnetic field perpendicular to the magnetization direction of the free layer is formed, an external magnetic field is not needed, and magnetic moment overturning is achieved.
In the embodiment of the application, the total thickness of the spin hall effect layer (10) can be larger than that of the free layer, so that a protruding part and a body can be firstly etched on the spin hall effect layer (10) to form a wedge-shaped structure, and during subsequent preparation, a Magnetic Tunnel Junction (MTJ) material to be prepared (mainly deposited on a protruding connecting surface and a part of the upper surface) is deposited on the spin hall effect layer (10) to form a bias magnetic field perpendicular to the magnetization direction of the free layer, thereby completing the development of the memory unit.
Optionally, the material of the spin hall effect layer comprises at least one of a non-magnetic metal material and a topological insulator material, the non-magnetic metal comprising at least one of: ta, Pt, Pd, W, the topological insulator material comprising at least one of: bi2Se3, Sb2Te3 and Bi2Te 3.
As an optional implementation manner of the embodiment of the application, the magnetic tunnel junction at least comprises a free layer, a barrier layer and a fixed layer which are sequentially stacked along the direction far away from the spin Hall effect layer. Optionally, the magnetic tunnel junction MTJ further includes a coupling layer and a pinning layer stacked in this order in a direction away from the fixed layer, wherein the coupling layer is disposed on a surface of the fixed layer away from the barrier layer.
FIG. 2 is a schematic diagram of a memory cell according to an alternative embodiment of the present application, where as shown in FIG. 2, the magnetic tunnel junction (11) comprises, stacked in sequence: a free layer (111), a barrier layer (112), a fixed layer (113), a coupling layer (114), and a pinning layer (115).
The thicknesses of the free layer (111) and the fixed layer (113) can be different, bias magnetic field deflection angles generated at the positions of the convex connection surfaces are different, each layer (111, 112, 113, 114, 115) of the magnetic tunnel junction can be combined with the electrode (12) to form a trapezoidal structure (such as a regular trapezoidal structure), the structure can be a vertical magnetization structure, a black arrow 2 in the figure is the magnetization direction of the free layer, the magnetization direction of the free layer is perpendicular to the surface of the spin hall effect layer (SHE layer), a slope is formed by the convex connection surface part in the figure 2, the slope has a certain angle, the magnetic moment is turned through the angle formed by the slope in the figure 2, and the larger the included angle of the magnetization direction of the free layer is, the easier the magnetic moment turning is.
The ratio of the widths of the body and the convex part of the spin Hall effect layer (10) and the ratio of the width of the wedge-shaped part to the total width of the free layer can be adjusted adaptively, in a feasible embodiment, the left included angle formed by the body connecting surface and the convex connecting surface is 170 degrees, and the ratio of the width of the wedge-shaped part to the total width of the free layer is 1:5, for example, the width of the part of the convex connecting surface is 10nm, and the width of the rest part is 40 nm.
As an optional implementation manner of this embodiment, the free layer may include a first free portion and a second free portion, the first free portion covers the protrusion connection surface, and the barrier layer includes a first barrier portion and a second barrier portion connected to each other, where the first barrier portion is located on a surface of the first free portion away from the protrusion connection surface, and the fixed layer covers both the first barrier portion and the second barrier portion, or the fixed layer covers only the second barrier portion.
FIG. 3 is a second structural schematic diagram of a memory cell provided in accordance with an alternative embodiment of the present application, as shown in FIG. 3, the free layer (111) includes a second free portion on the upper surface of the spin Hall effect (10) and a first free portion over the bump attach face, the first free portion overlying the bump attach face. Similarly to the free layer (111), a first barrier portion and a second barrier portion are correspondingly arranged on the barrier layer (112) to form a wedge-shaped structure. The fixed layer (113) and the coupling layer (114) above, the pinning layer (115) and the electrode (12) are partially removed at the convex connecting surface, and only the middle parallel fixed layer is remained, so that the initial deflection included angle of a bias magnetic field is larger (shown in figure 3), the influence of the fixed layer and the pinning layer on the deflection angle is reduced, and the magnetic moment overturning is accelerated.
As an optional implementation manner of this embodiment, the free layer and the fixed layer are perpendicular magnetization structures; or the free layer and the fixed layer are in-plane magnetization structures, wherein the magnetization direction of the perpendicular magnetization structure is parallel to the thickness direction of the memory cell, and the magnetization direction of the in-plane magnetization structure is perpendicular to the thickness direction of the memory cell.
The shape of the projection of the memory cell on the reference plane (such as the bottom plane of the spin hall effect layer) comprises at least one of the following: circular, oval, square, diamond, and rectangular.
The storage unit is of a three-terminal structure, the read-write path is separated (the read operation is carried out through the spin Hall effect layer 10, the magnetic tunnel junction 11 and the electrode 12, and the storage operation is realized through the independent spin Hall effect layer 10), the read-write speed is high, the power consumption is low, and the reliability is higher. Wherein the write data operation comprises: the current passes through the spin Hall effect layer (10) and does not pass through the magnetic tunnel junction (11); the magnetization direction of a convex connecting surface of a spin Hall effect layer (10) of the memory is different from the magnetization direction of a free layer of a body connecting surface, and a bias magnetic field is formed in the magnetization direction of the free layer of the body connecting surface, wherein the spin Hall effect layer comprises a body and a convex part, the convex part is provided with a convex connecting surface, the body is provided with a body connecting surface, and the convex connecting surface is connected with the body connecting surface; based on the bias magnetic field, the magnetic moment can be turned over by introducing current, and data writing is completed;
and when reading data, the method comprises the following steps: the current passes through the magnetic tunnel junction (11) and sequentially passes through the pinning layer (115), the coupling layer (114), the fixed layer (113), the barrier layer (112) and the free layer (111), and when the current passes through the magnetic tunnel junction (11), data reading is completed according to the resistance.
In the specific preparation of the memory cell, fig. 4 is a flowchart of a preparation method of a memory according to an alternative embodiment of the present application, and as shown in fig. 4, the method includes:
step S401, performing first deposition treatment on nonmagnetic metal on a substrate, and etching the spin Hall effect layer of the nonmagnetic metal by a preset etching technology to obtain a boss and a body, wherein the boss is provided with a boss connecting surface, the body is provided with a body connecting surface, and the boss connecting surface is connected with the body connecting surface;
step S403, carrying out secondary deposition treatment on each layer of material and electrode of the magnetic tunnel junction, and grinding each layer of material and electrode of the magnetic tunnel junction to flatten the electrode, wherein the magnetic tunnel junction is arranged on the spin Hall effect layer;
step S405, removing the material on the upper part of the connecting surface of the body through a preset etching technology, and reserving the material right above the upper surface of the spin Hall effect layer and the convex connecting surface to obtain the target storage unit.
FIG. 5 is a schematic diagram of a memory cell of the present application, first step: as shown in the left side of fig. 5, a non-magnetic metal (which may be a heavy metal such as Ta, Pt, Pd, W) or a topological insulator (such as Bi2Se3, Sb2Te3, Bi2Te3) may be deposited on the substrate by magnetron sputtering, etc., and then a gas such as SF6, Cl2, etc. may be introduced into the spin hall effect layer (at the position indicated by the non-magnetic metal) by photolithography and reactive ion etching, etc., to obtain the protrusions and the body at the incident angle of the ion beam; the second step is that: as shown in the right side of fig. 5, each layer of material and electrode of the MTJ may be deposited by magnetron sputtering or the like, and then ground to flatten the electrode; thirdly, after depositing materials and electrodes of each layer of the magnetic tunnel junction MTJ, removing the material on the upper portion of the body connection surface (i.e., the MTJ material on the upper portion of the left body connection surface) by photolithography, reactive ion etching, and the like, and retaining the material on the upper surface and directly above the protruding connection surface (i.e., on the slope), thereby preparing the memory cell structure shown in fig. 1.
In addition, on the basis of the first three steps, a fourth step can be added, and then photoetching and etching are carried out to expose the corresponding surface of the slope, reactive ion etching is carried out to remove the material above the corresponding fixed layer right above the convex connecting surface, and the storage unit with the trapezoidal structure as shown in fig. 3 is obtained.
Through the preparation method, the memory unit with the asymmetric structure can be obtained, the magnetic moment overturning is realized through the asymmetric structure, the thickness of the spin Hall effect layer can be set to be larger than that of the free layer, so that the wedge-shaped structure (namely, the structure with the slope or the protruding connecting surface) can be etched on the spin Hall effect layer easily, the free layer is protected, the free layer and the MTJ material of the Magnetic Tunnel Junction (MTJ) above are prevented from being oxidized, and the preparation method is more reliable.
According to another aspect of the embodiments of the present invention, there is also provided a memory, including a storage unit, where the storage unit is any one of the storage units described above.
The storage units in the memory are sequentially from bottom to top: spin Hall effect layers (e.g., Ta, Pt, etc.), free layers (e.g., CoFeB), barrier layers (e.g., MgO), fixed layers (e.g., CoFeB), coupling layers (e.g., Ru, Rh, Ir, etc.), pinned layers (Co), electrodes (e.g., Ru, Rh, etc.).
The spin Hall effect layer can be etched into a wedge-shaped structure, MTJ (including a free layer, a barrier layer, a fixed layer, a coupling layer and a pinning layer) materials are deposited on a convex connecting surface (such as an inclined surface) and an upper surface of the spin Hall effect layer to form a bias magnetic field which is vertical to the magnetization direction of the free layer on the upper surface, a certain deflection angle is generated between the total magnetic moment and the vertical direction, an external magnetic field is not needed, and the magnetic moment is turned over.
In accordance with an embodiment of the present invention, there is provided an embodiment of a method of operation of a memory, it being noted that the steps illustrated in the flowchart of the figure may be performed in a computer system such as a set of computer-executable instructions, and that while a logical order is illustrated in the flowchart, in some cases the steps illustrated or described may be performed in an order different than here.
Fig. 6 is a flowchart of an operation method of a memory according to an embodiment of the present application, applied to the memory, as shown in fig. 6, the operation method includes:
performing a write data operation and/or a read data operation using the memory, wherein,
in step S601, the write data operation includes: the current passes through the spin Hall effect layer and does not pass through the magnetic tunnel junction; the magnetization direction of a convex connecting surface of a spin Hall effect layer of the memory is different from the magnetization direction of a free layer of a body connecting surface, and a bias magnetic field is formed in the magnetization direction of the free layer of the body connecting surface, wherein the spin Hall effect layer comprises a body and a convex part, the convex part is provided with a convex connecting surface, the body is provided with a body connecting surface, and the convex connecting surface is connected with the body connecting surface; based on the bias magnetic field, the magnetic moment can be turned over by introducing current, and data writing is completed;
in step S603, the data reading operation includes: passing a current through the magnetic tunnel junction; and finishing reading data according to the high and low of the resistance.
In the above operation manner, the memory may be used to perform a write data operation and/or a read data operation, where the write data operation includes: the current passes through the spin Hall effect layer and does not pass through the magnetic tunnel junction; the magnetization direction of a convex connecting surface of a spin Hall effect layer of the memory is different from the magnetization direction of a free layer of a body connecting surface, and a bias magnetic field is formed in the magnetization direction of the free layer of the body connecting surface, wherein the spin Hall effect layer comprises a body and a convex part, the convex part is provided with a convex connecting surface, the body is provided with a body connecting surface, and the convex connecting surface is connected with the body connecting surface; based on the bias magnetic field, the magnetic moment can be turned over by introducing current, and data writing is completed; the read data operation includes: passing a current through the magnetic tunnel junction; and finishing reading data according to the high and low of the resistance. In this embodiment, the protruding connection face is inequality with the free layer magnetization direction of body connection face, forms bias magnetic field in the free layer magnetization direction of body connection face, need not external magnetic field and can accomplish the magnetic moment upset of free layer, and easy operation and consumption are lower to solve the memory among the correlation technique and need external magnetic field destruction space inversion symmetry, could realize the magnetic moment upset, the complicated and great technical problem of consumption of operation.
The above-mentioned serial numbers of the embodiments of the present invention are merely for description and do not represent the merits of the embodiments. In the above embodiments of the present invention, the descriptions of the respective embodiments have respective emphasis, and for parts that are not described in detail in a certain embodiment, reference may be made to related descriptions of other embodiments.
In the embodiments provided in the present application, it should be understood that the disclosed technology can be implemented in other ways. The above-described embodiments of the apparatus are merely illustrative, and for example, the division of the units may be a logical division, and in actual implementation, there may be another division, for example, multiple units or components may be combined or integrated into another system, or some features may be omitted, or not executed. In addition, the shown or discussed mutual coupling or direct coupling or communication connection may be an indirect coupling or communication connection through some interfaces, units or modules, and may be in an electrical or other form.
The units described as separate parts may or may not be physically separate, and parts displayed as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of units. Some or all of the units can be selected according to actual needs to achieve the purpose of the solution of the embodiment.
The integrated unit, if implemented in the form of a software functional unit and sold or used as a stand-alone product, may be stored in a computer readable storage medium. Based on such understanding, the technical solution of the present invention may be embodied in the form of a software product, which is stored in a storage medium and includes instructions for causing a computer device (which may be a personal computer, a server, or a network device) to execute all or part of the steps of the method according to the embodiments of the present invention. And the aforementioned storage medium includes: a U-disk, a Read-Only Memory (ROM), a Random Access Memory (RAM), a removable hard disk, a magnetic or optical disk, and other various media capable of storing program codes.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (10)
1. A memory cell, comprising at least:
the spin Hall effect layer comprises a body and a boss, the boss is provided with a boss connecting surface, the body is provided with a body connecting surface, and the boss connecting surface is connected with the body connecting surface;
the magnetic tunnel junction is arranged on the spin Hall effect layer and comprises a free layer, and the free layer is arranged on the surface of the spin Hall effect layer and at least covers part of the raised connecting surface;
an electrode arranged on the surface of the magnetic tunnel junction far away from the spin Hall effect layer,
the free layer magnetization direction of the protrusion connecting surface is different from that of the body connecting surface, and a bias magnetic field is formed in the free layer magnetization direction of the body connecting surface.
2. A storage unit according to claim 1, wherein the angle between at least one of said convex connection surfaces and said body connection surface is greater than 90 ° and less than 180 °.
3. The memory cell of claim 1, wherein the magnetic tunnel junction comprises at least a free layer, a barrier layer, and a fixed layer stacked in order along and away from the spin hall effect layer.
4. The memory cell of claim 3, wherein the free layer comprises a first free portion and a second free portion, the first free portion overlying the raised connection surface, and the barrier layer comprises an interconnecting first barrier portion and a second barrier portion, wherein the first barrier portion is located on a surface of the first free portion distal from the raised connection surface, and wherein the pinned layer overlies both the first barrier portion and the second barrier portion, or wherein the pinned layer overlies only the second barrier portion.
5. The memory cell of claim 3, wherein the free layer and the fixed layer are perpendicular magnetization structures; or the free layer and the fixed layer are in-plane magnetization structures, wherein the magnetization direction of the perpendicular magnetization structure is parallel to the thickness direction of the memory cell, and the magnetization direction of the in-plane magnetization structure is perpendicular to the thickness direction of the memory cell.
6. The memory cell of claim 3, wherein the magnetic tunnel junction further comprises a coupling layer and a pinning layer stacked in sequence in a direction away from the fixed layer, wherein the coupling layer is disposed on a surface of the fixed layer away from the barrier layer.
7. The memory cell of claim 1, wherein the spin hall effect layer is arranged in a trench structure, and wherein portions of the magnetic tunnel junction are arranged at trench bottoms and edges.
8. A method of making a memory cell, comprising:
carrying out first deposition treatment on nonmagnetic metal on a substrate, and etching the spin Hall effect layer of the nonmagnetic metal by a preset etching technology to obtain a boss and a body, wherein the boss is provided with a boss connecting surface, the body is provided with a body connecting surface, and the boss connecting surface is connected with the body connecting surface;
carrying out secondary deposition treatment on each layer of material and electrode of the magnetic tunnel junction, and grinding each layer of material and electrode of the magnetic tunnel junction to enable the electrode to be flat, wherein the magnetic tunnel junction is arranged on the spin Hall effect layer;
and removing the material on the upper part of the connecting surface of the body by a preset etching technology, and reserving the material right above the upper surface of the spin Hall effect layer and the convex connecting surface to obtain the target storage unit.
9. A memory comprising a memory cell, characterized in that the memory cell is a memory cell according to any one of claims 1 to 7.
10. The memory of claim 9, wherein the memory is a magnetic random access memory.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910745488.3A CN112397638B (en) | 2019-08-13 | 2019-08-13 | Memory cell, preparation method thereof and memory |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910745488.3A CN112397638B (en) | 2019-08-13 | 2019-08-13 | Memory cell, preparation method thereof and memory |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112397638A true CN112397638A (en) | 2021-02-23 |
| CN112397638B CN112397638B (en) | 2023-04-07 |
Family
ID=74601178
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910745488.3A Active CN112397638B (en) | 2019-08-13 | 2019-08-13 | Memory cell, preparation method thereof and memory |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112397638B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113809229A (en) * | 2021-09-01 | 2021-12-17 | 致真存储(北京)科技有限公司 | Spin orbit torque magnetic memory and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150129995A1 (en) * | 2013-10-30 | 2015-05-14 | The Regents Of The University Of California | Magnetic memory bits with perpendicular magnetization switched by current-induced spin-orbit torques |
| US20170082697A1 (en) * | 2015-09-18 | 2017-03-23 | Regents Of The University Of Minnesota | Spin hall effect magnetic structures |
| US20180123021A1 (en) * | 2016-10-27 | 2018-05-03 | Tdk Corporation | Spin-orbit torque type magnetization reversal element, magnetic memory, and high frequency magnetic device |
| WO2019139025A1 (en) * | 2018-01-10 | 2019-07-18 | Tdk株式会社 | Spin orbital torque-type magnetization rotation element, spin orbital torque-type magneto-resistive effect element, and magnetic memory |
-
2019
- 2019-08-13 CN CN201910745488.3A patent/CN112397638B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150129995A1 (en) * | 2013-10-30 | 2015-05-14 | The Regents Of The University Of California | Magnetic memory bits with perpendicular magnetization switched by current-induced spin-orbit torques |
| US20170082697A1 (en) * | 2015-09-18 | 2017-03-23 | Regents Of The University Of Minnesota | Spin hall effect magnetic structures |
| US20180123021A1 (en) * | 2016-10-27 | 2018-05-03 | Tdk Corporation | Spin-orbit torque type magnetization reversal element, magnetic memory, and high frequency magnetic device |
| WO2019139025A1 (en) * | 2018-01-10 | 2019-07-18 | Tdk株式会社 | Spin orbital torque-type magnetization rotation element, spin orbital torque-type magneto-resistive effect element, and magnetic memory |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113809229A (en) * | 2021-09-01 | 2021-12-17 | 致真存储(北京)科技有限公司 | Spin orbit torque magnetic memory and preparation method thereof |
| CN113809229B (en) * | 2021-09-01 | 2023-10-03 | 致真存储(北京)科技有限公司 | Spin orbit moment magnetic memory and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112397638B (en) | 2023-04-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6909633B2 (en) | MRAM architecture with a flux closed data storage layer | |
| JP6088167B2 (en) | Method and system for providing a magnetic junction using a semi-metallic ferromagnet | |
| US8287944B2 (en) | Magnetic memory cell construction | |
| KR102264836B1 (en) | Method and system for providing magnetic junctions including a package structure usable in spin transfer torque memories | |
| KR101893908B1 (en) | Method and system for providing hybrid magnetic tunneling junction elements with improved switching | |
| TWI455300B (en) | Stt-mram cell structures | |
| US7588945B2 (en) | Multi-state thermally assisted storage | |
| US8039913B2 (en) | Magnetic stack with laminated layer | |
| US7622784B2 (en) | MRAM device with improved stack structure and offset field for low-power toggle mode writing | |
| KR102363995B1 (en) | Semiconductor device and method for fabricating the same | |
| US11223010B2 (en) | Thin reference layer for STT MRAM | |
| US20080277703A1 (en) | Magnetoresistive random access memory and method of manufacturing the same | |
| KR102441692B1 (en) | Method and system for providing a magnetic junction usable in spin transfer torque applications using multiple stack depositions | |
| US9472753B1 (en) | Method for fabricating MRAM bits on a tight pitch | |
| JP2002540594A (en) | Memory cell device and method of manufacturing the same | |
| JP4834404B2 (en) | MRAM cell having a magnetic write line with a stable magnetic state in the end region | |
| TWI235371B (en) | Magnetic random access memory, magnetic cell therein, and associated method therefor | |
| JP2015179844A (en) | Method for providing perpendicular magnetic anisotropy magnetic junction usable in spin transfer torque magnetic device using sacrificial insertion layer | |
| CN112397638B (en) | Memory cell, preparation method thereof and memory | |
| US6927075B2 (en) | Magnetic memory with self-aligned magnetic keeper structure | |
| US20150200357A1 (en) | Method and system for providing multiple self-aligned logic cells in a single stack | |
| TW201246459A (en) | Confined cell structures and methods of forming confined cell structures | |
| CN113690367A (en) | SOT-MRAM memory cell and preparation method thereof | |
| JP2008294056A (en) | Magnetic recording device | |
| CN116782664B (en) | Semiconductor memory unit, array and device and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |