CN113809140A

CN113809140A - Array substrate, display device and manufacturing method of array substrate

Info

Publication number: CN113809140A
Application number: CN202111217922.4A
Authority: CN
Inventors: 刘金贵; 唐正韵; 王明晖
Original assignee: Hefei Visionox Technology Co Ltd
Current assignee: Hefei Visionox Technology Co Ltd
Priority date: 2021-10-19
Filing date: 2021-10-19
Publication date: 2021-12-17

Abstract

The application discloses array substrate, display device and array substrate's manufacturing method, array substrate includes: a substrate; an optical adjustment layer disposed on the substrate; the active layer is arranged on one side, away from the substrate, of the light adjusting layer; the light adjusting layer is provided with a refraction part, the orthographic projection of at least part of the active layer on the substrate is positioned in the orthographic projection of the refraction part on the substrate, the refraction part is used for changing the path of light rays incident from the substrate so as to reduce the light quantity incident to the active layer, and the light rays entering the refraction part can be deflected through the refraction part, so that the light rays are dispersed, the light quantity actually irradiated to the active layer is less, the phenomenon that the characteristics of the TFT deviate due to a photon-generated carrier can be relieved, and the working accuracy of the TFT is improved.

Description

Array substrate, display device and manufacturing method of array substrate

Technical Field

The application relates to the technical field of display, in particular to an array substrate, a display device and a manufacturing method of the array substrate.

Background

With the rapid development of display technology, Organic Light Emitting diodes (Organic Light Emitting diodes) are used_，OLED) has become a research hotspot in the field of display technology, and has been widely applied to display devices such as mobile phones and flat panelsThe application is as follows. Thin Film Transistors (TFTs) are used as the core component of OLEDs, and their performance directly influences the display effect of the display device. However, in the manufacturing and using processes of the display device, the TFT is easily subjected to internal or external light irradiation to cause electrical characteristic shift, which causes defects and cannot ensure a normal display effect.

Disclosure of Invention

The application provides an array substrate, a display device and a manufacturing method of the array substrate, which can improve the stability of a thin film transistor and improve the display effect.

An embodiment of a first aspect of the present application provides an array substrate, including: a substrate; an optical adjustment layer disposed on the substrate; the active layer is arranged on one side, away from the substrate, of the light adjusting layer; the light adjusting layer is provided with a refraction part, at least partial orthographic projection of the active layer on the substrate is positioned in the orthographic projection of the refraction part on the substrate along the thickness direction of the array substrate, and the refraction part is used for changing the path of light incident from the substrate so as to reduce the light quantity incident to the active layer.

According to an embodiment of the first aspect of the present application, the refractive portion has two opposite surfaces in a thickness direction of the array substrate, at least one of the two surfaces being curved toward the other.

According to any of the previous embodiments of the first aspect of the present application, the active layer comprises a channel region and source and drain regions located on both sides of the channel region; in the thickness direction, an orthographic projection of at least one of the channel region, the source region and the drain region on the substrate and an orthographic projection of the refraction part on the substrate are at least partially overlapped.

According to any of the preceding embodiments of the first aspect of the present application, an orthographic projection of the channel region on the substrate is located within an orthographic projection of the refracted portion on the substrate.

According to any of the preceding embodiments of the first aspect of the present application, an orthographic projection of at least part of the source and/or drain region on the substrate in the thickness direction is within an orthographic projection of the refractive portion on the substrate.

According to any of the previous embodiments of the first aspect of the present application, the refraction portion comprises a first portion corresponding to the channel region and a second portion corresponding to the source region and/or the drain region; the thickness of the refraction portion has a tendency to gradually increase in a direction from the first portion to the second portion.

In accordance with any of the preceding embodiments of the first aspect of the present application, the light transmittance of the first portion is less than the light transmittance of the second portion.

According to any of the embodiments of the first aspect of the present application, the light adjusting layer further includes a light shielding portion, an orthographic projection of the refraction portion on the substrate at least partially surrounds an outer periphery of the orthographic projection of the light shielding portion on the substrate; the orthographic projection of the channel region on the substrate is positioned within the orthographic projection of the light shielding portion on the substrate.

According to any of the preceding embodiments of the first aspect of the present application, the two surfaces comprise a first surface facing the active layer, the first surface being shaped concave towards the substrate.

According to any one of the preceding embodiments of the first aspect of the present application, the material of the refractive portion comprises: AL, MO, amorphous silicon, black resin.

According to any one of the embodiments of the first aspect of the present application, the refractive index of the refractive portion is 1.5 to 3.5.

According to any of the preceding embodiments of the first aspect of the present application, the two surfaces further comprise a second surface facing the substrate, the second surface being formed convex towards the substrate.

According to any one of the embodiments of the first aspect of the present application, the array substrate further includes a first buffer layer disposed between the substrate and the optical adjustment layer, the first buffer layer includes a support portion for supporting the refraction portion, and the support portion is disposed to protrude toward a surface of the refraction portion.

According to any of the preceding embodiments of the first aspect of the present application, the refractive index of the first buffer layer is less than or equal to the refractive index of the refractive portion.

According to any of the foregoing embodiments of the first aspect of the present application, the optical adjustment layer includes a plurality of sub-optical adjustment layers stacked in a thickness direction of the substrate, at least a part of the sub-optical adjustment layers having the refraction portion; at least part of the refraction parts of the sub-optical adjusting layers are arranged corresponding to the channel regions along the thickness direction of the substrate.

Embodiments of the second aspect of the present application further provide a display device, which includes the display panel of any of the embodiments of the first aspect.

Embodiments of the third aspect of the present application further provide a method for manufacturing an array substrate, where the method includes:

forming a refraction material layer on a substrate, and patterning the refraction material layer to form a refraction part; the refraction part has two opposite surfaces in the thickness direction of the array substrate, and at least one of the two surfaces is bent towards the other surface;

forming a semiconductor material layer on the refraction part, and patterning the semiconductor material layer to form an active layer with a channel region; in the thickness direction of the array substrate, the orthographic projection of at least part of the active layer on the substrate is positioned in the orthographic projection of the refraction part on the substrate.

According to the array substrate, the display device and the manufacturing method of the array substrate, the light adjusting layer with the refraction portion is arranged, and the refraction portion is used for changing the path of light incident from the substrate so as to reduce the light quantity incident to the active layer. The light entering the refraction part can be deflected by the refraction part, so that the light is diffused, the light quantity actually irradiated to the active layer is less, the phenomenon that the property of the TFT deviates due to the photo-generated carriers can be relieved, and the working accuracy of the TFT is improved.

Drawings

Other features, objects, and advantages of the present application will become apparent from the following detailed description of non-limiting embodiments thereof, when read in conjunction with the accompanying drawings, in which like reference characters designate the same or similar parts throughout the figures thereof, and which are not to scale.

Fig. 1 is a schematic structural diagram of an array substrate according to an embodiment of the present disclosure;

FIG. 2 shows a schematic enlarged view of a portion of the TFT element of FIG. 1;

FIG. 3 is a schematic diagram of an optical path of the refraction portion of FIG. 1;

fig. 4 is a schematic structural diagram of an array substrate according to another embodiment of the present disclosure;

FIG. 5 is a schematic diagram of an optical path of the refraction portion of FIG. 4;

fig. 6 is a schematic structural diagram of an array substrate according to yet another embodiment of the present disclosure;

fig. 7 is a schematic structural diagram of an array substrate according to still another embodiment of the present disclosure;

FIG. 8 is a schematic illustration of an optical path of the light adjusting layer of FIG. 7;

fig. 9 is a schematic structural diagram of an array substrate according to still another embodiment of the present disclosure;

fig. 10 is a schematic structural diagram of an array substrate according to still another embodiment of the present disclosure;

fig. 11 is a schematic structural diagram of an array substrate according to still another embodiment of the present disclosure;

fig. 12 is a schematic flow chart illustrating a method for manufacturing an array substrate according to an embodiment of the present disclosure;

fig. 13 is a flowchart of a manufacturing method of an array substrate according to an embodiment of the third aspect of the present application.

Description of reference numerals:

1. an array substrate;

11. a substrate; 12. an optical adjustment layer; 120. a sub-light adjusting layer; 121. a refraction section; 121a, a first portion; 121b, a second portion; 122. a light shielding portion; 13. a TFT element; 131. an active layer; 131a, a channel region; 131b, a source region; 131c, a drain region; 132. a first buffer layer; 132a, a support portion; 133. a second buffer layer; 134. a gate layer; 135. a source drain layer; 135a, a source electrode; 135b, a drain electrode; 136. an insulating layer;

p1, first surface; p2, second surface.

Detailed Description

Features and exemplary embodiments of various aspects of the present invention will be described in detail below. In the following detailed description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without some of these specific details. The following description of the embodiments is merely intended to provide a better understanding of the present invention by illustrating examples of the present invention. In the drawings and the following description, at least some well-known structures and techniques have not been shown in detail in order to avoid unnecessarily obscuring the present invention; also, the dimensions of some of the structures may be exaggerated for clarity. Furthermore, the described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments.

In the description of the present invention, it is to be noted that, unless otherwise specified, "a plurality" means two or more; the terms "upper," "lower," "left," "right," "inner," "outer," and the like, as used herein, refer to an orientation or positional relationship indicated for convenience in describing the invention and to simplify description, but do not indicate or imply that the referenced device or element must have a particular orientation, be constructed and operated in a particular orientation, and thus should not be construed as limiting the invention. Furthermore, the terms "first," "second," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.

The directional terms appearing in the following description are intended to be illustrative in all directions, and are not intended to limit the specific construction of embodiments of the present invention. In the description of the present invention, it should also be noted that, unless otherwise explicitly specified or limited, the terms "mounted" and "connected" are to be interpreted broadly, e.g., as either a fixed connection, a removable connection, or an integral connection; can be directly connected or indirectly connected. The specific meaning of the above terms in the present invention can be understood as appropriate to those of ordinary skill in the art.

With the rapid development of Display technology, Display devices have experienced changes from Liquid Crystal Displays (LCDs), Organic Light Emitting diodes (Organic Light Emitting diodes)_，OLED), Quantum-dot Light Emitting Diode (QLED), Micro Light Emitting Diode (Micro LED), and other display technologies, and Thin Film Transistor (TFT), hereinafter referred to as TFT element, is generally disposed in an array substrate of these display devices.

The inventors of the present application have found and recognized that since a TFT has a semiconductor element, when light is irradiated to the semiconductor element, the semiconductor element is caused to generate photogenerated carriers, i.e. the semiconductor material is subjected to photoexcitation, and the electron excited transition results in the generation of electron-hole pairs. The photo-generated carriers adversely affect the electrical stability of the TFT, resulting in poor display effects such as display unevenness, image sticking, color shift, and the like. For example, in a display device, when a driving TFT is illuminated, a material of a conductive channel of the driving TFT is excited by light irradiation to form a photo-generated carrier, which affects the off-state stability of the driving TFT, and may cause poor display effects such as image sticking, display unevenness, and low gray scale color cast.

Particularly, in the currently mainstream display technology, an Active-Matrix Organic Light-Emitting Diode (AMOLED) display panel generally adopts a Low Temperature Polysilicon (LTPS) process, which greatly improves carrier mobility compared to a conventional Amorphous Silicon (a-Si) TFT, but also makes the influence caused by the photo-generated carriers more prominent.

Furthermore, some processes in the manufacturing process of the display panel, such as a Mark alignment process, require positioning by light, or due to the influence of factors such as the structure of the display device and the external environment, it is difficult to completely avoid the light from irradiating the TFT.

The present application is therefore directed to alleviating or solving, at least to some extent, the above-mentioned problems.

For better understanding of the present application, the array substrate, the display device and the method for manufacturing the array substrate according to the embodiments of the present application are described in detail below with reference to fig. 1 to 13.

Referring to fig. 1, fig. 1 is a schematic structural diagram of an array substrate 1 according to an embodiment of the present disclosure.

As shown in fig. 1, an embodiment of the present application provides an array substrate 1, including: a substrate 11, an optical modifier layer 12 and an active layer 131. The optical modifier layer 12 is disposed on the substrate 11, and the active layer 131 is disposed on a side of the optical modifier layer 12 away from the substrate 11. The optical adjustment layer 12 has a refraction portion 121, and an orthographic projection of at least a part of the active layer 131 on the substrate 11 is located within an orthographic projection of the refraction portion 121 on the substrate 11 along the thickness direction of the array substrate 1, and the refraction portion is used for changing the path of light incident from the substrate to reduce the amount of light incident to the active layer. The light entering the refraction portion is deflected by the refraction portion, so that the light is diffused to reduce the light quantity actually irradiated to the active layer 131, the phenomenon of TFT characteristic deviation caused by photo-generated carriers can be reduced, and the working accuracy of the TFT is improved.

In particular, the refractive portion may include a high refractive index material, where the high refractive index is relative to the refractive index of the adjacent film layer of the refractive portion, that is, the refractive index of the refractive portion is greater than the refractive index of the adjacent film layer of the refractive portion.

Optionally, with reference to fig. 1, the refraction portion 121 has two opposite surfaces in the thickness direction of the array substrate 1, and at least one of the two surfaces is curved toward the other surface. Under the effect of the bending structure, the light irradiated onto the active layer 131 through the refraction portion 121 is diffused, so that the light quantity actually irradiated onto the active layer 131 can be reduced, the light entering the active layer 131 is reduced, the phenomenon that the characteristics of the TFT are shifted due to the photo-generated carriers is reduced, the working accuracy of the TFT is improved, and the display effect of the display panel and the reliability of the product are also improved.

Referring to fig. 2, fig. 2 is a partially enlarged view of the TFT device 13 in fig. 1.

In some embodiments, the structure and the location of the TFT element 13 are as shown in fig. 2, the TFT element 13 is disposed on one side of the substrate 11, and the TFT element 13 includes a gate layer 134, a source/drain layer 135 and an insulating layer 136. The gate layer 134 includes a plurality of gates spaced apart from each other, the source drain layer 135 includes a plurality of source electrodes 135a and drain electrodes 135b spaced apart from each other, and the source electrodes 135a and the drain electrodes 135b are respectively connected to two ends of the active layer 131. It is understood that a plurality of TFT elements 13 are formed on the substrate 11. The gate may be or may include a metallic material such as copper, gold, silver, iron, and the like. The source electrode 135a and the drain electrode 135b may be made of a metal material similar to the gate electrode; and may also be or may include a doped semiconductor material. An insulating layer 136 is disposed between the gate layer 134 and the source and drain layers 135 and the active layer 131, respectively. The material of the insulating layer 136 may be or may include a transparent and insulating material such as silicon oxide or silicon nitride.

Specifically, the light is incident from below the substrate 11, but the incident mode is not limited to this. Referring to fig. 3, fig. 3 is a schematic diagram illustrating an optical path of the refraction portion 121 in fig. 1.

As shown in fig. 3, when light is vertically incident from below the substrate 11, if the refraction portion 121 is not provided, the light vertically irradiates the active layer 131, which causes a large amount of photo-generated carriers to be generated, thereby deteriorating the stability of the TFT characteristics. Since the refractive portion 121 is provided, the light emitted from the curved surface of the refractive portion 121 is deflected and dispersed by the curved structure of the refractive portion 121, so that the light intensity actually irradiated onto the active layer 131 is low, and the generation of photo-generated carriers is slowed down.

Note that, at least one of the two surfaces of the refraction portion 121 is formed to be concave toward the other, and the formed structure can be regarded as a structure similar to a concave lens. The concave lens structure referred to herein may be either a plano-concave structure, such as one of two surfaces being concave and the other being planar; the concave lens structure may also be a biconcave structure, such as where both surfaces are concave toward each other. Technical personnel can select specific structure according to actual need and the technology degree of difficulty to realize better light dispersion effect, namely, the light irradiated to the active layer 131 through the refraction part 121 is dispersed, the light entering amount of the light irradiated to the active layer 131 is reduced, the phenomenon that photogenerated carriers are generated on the active layer 131 is slowed down to at least a certain extent, the characteristic deviation of the TFT is avoided, and the accuracy of the characteristic of the TFT is improved.

Alternatively, the material of the substrate 11 may be or include an inorganic material such as quartz or glass, and may also be or include an organic material such as Polyimide (PI) or polyethylene terephthalate (PET).

The material of the refraction portion 121 may include a semiconductor material, such as amorphous silicon, and may adjust the adhesion of the upper and lower film layers.

Optionally, the optical adjustment layer 12 has the refraction portions 121 and the hollow areas located between the refraction portions 121, and the setting of the hollow areas can prevent the orthographic projection of the optical adjustment layer 12 on the substrate 11 from completely covering the substrate 11, prevent the setting of the adjustment surface of the optical adjustment layer 12, reduce the shading area of the optical adjustment layer 12, and improve the light transmittance of the optical adjustment layer 12.

Furthermore, along the thickness direction of the array substrate 1, the refraction portion 121 of the optical adjustment layer 12 is disposed corresponding to the area where the driving TFT is located, so that the intensity of light which is incident from the lower side of the substrate 11 and irradiates on the driving TFT is reduced, the stability of the driving TFT is improved, the characteristic deviation of the TFT is slowed down, and the display effect of the display device is improved.

Illustratively, the display panel includes a transparent region and a non-transparent region, and the light-adjusting layer 12 in the transparent region is provided with the above-mentioned hollowed-out region, which can improve transmittance, increase the light-transmitting performance of the transparent region, and also improve the light-sensing performance of the light-sensing element disposed above the light-adjusting layer 12.

Referring to fig. 4, fig. 4 is a schematic structural diagram of an array substrate 1 according to another embodiment of the present disclosure.

In some embodiments, as shown in fig. 4, the active layer 131 includes a channel region 131a and source and drain

regions

131b and 131c located at both sides of the channel region 131 a. In the thickness direction of the array substrate 1, an orthogonal projection of at least one of the channel region 131a, the source region 131b, and the drain region 131c on the substrate 11 at least partially overlaps with an orthogonal projection of the refraction portion 121 on the substrate 11. The refraction portions 121 are disposed in different regions, so as to reduce the irradiation degree of light to different regions, thereby reducing the phenomenon that light irradiates the active layer 131 to generate photo-generated carriers.

Illustratively, in the thickness direction of the array substrate 1, an orthographic projection of the channel region 131a on the substrate 11 at least partially overlaps with an orthographic projection of the refraction portion 121 on the substrate 11. Since the light irradiation has a large influence on the channel region 131a, the arrangement of the refraction portion 121 corresponding to the channel region 131a can effectively alleviate the phenomenon that the light irradiates the channel region 131a to generate photo-generated carriers.

Illustratively, in the thickness direction of the array substrate 1, the orthographic projections of the source region 131b and the drain region 131c on the substrate 11 at least partially overlap with the orthographic projection of the refraction portion 121 on the substrate 11. The source region 131b and the drain region 131c are located at two sides of the channel region 131a and adjacent to the channel region 131a, so that light irradiated to the source region 131b and the drain region 131c may also affect the channel region 131a, and therefore, the refractive portion 121 is disposed in the source region 131b and the drain region 131c, which can slow down irradiation of the source region 131b and the drain region 131c by the light on one hand, and slow down irradiation of the channel region 131a by the light on the other hand, thereby slowing down generation of photo-generated carriers and improving accuracy of characteristics of the TFT.

Referring to fig. 5, fig. 5 is a schematic diagram illustrating an optical path of the refraction portion 121 in fig. 4.

In some embodiments, as shown in fig. 5, an orthographic projection of the channel region 131a on the substrate 11 is located within an orthographic projection of the refractive portion 121 on the substrate 11. That is, the refraction portion 121 completely covers the channel region 131a, so as to maximally reduce the intensity of light incident into the channel region 131a from below the substrate 11, reduce the direct incidence of light on the channel region 131a, and avoid the influence of photo-carriers on the TFT characteristics.

Optionally, an orthographic projection of at least a part of the source region 131b and/or the drain region 131c on the substrate 11 in the thickness direction is within an orthographic projection of the refraction portion 121 on the substrate 11. That is, the orthographic projection of the refraction portion 121 completely covers the channel region 131a and a portion of the source region 131b and/or the drain region 131c connected to the channel region 131a, and since the source region 131b and the drain region 131c are located at both sides of the channel region 131a and connected to the channel region 131a, the source region 131b and/or the drain region 131c may be irradiated with light to affect the channel region 131 a. Covering the channel region 131a and the partial region connected to the channel region 131a with the refraction portion 121 can prevent light from directly irradiating the channel region 131a from the lower side of the substrate 11, and can prevent the light from irradiating the region connected to the channel region 131a to affect the channel region 131a, thereby preventing the light from directly or indirectly acting on the channel region 131a to generate a photo-generated carrier in the channel region 131a, and effectively improving the operating reliability of the TFT.

Referring to fig. 6, fig. 6 is a schematic structural diagram of an array substrate 1 according to another embodiment of the present disclosure.

In some embodiments, as shown in fig. 6, the refraction portion 121 includes a first portion 121a corresponding to the channel region 131a and a second portion 121b corresponding to the source region 131b and/or the drain region 131 c. And the orthographic projection of the channel region 131a on the substrate 11 is located within the orthographic projection of the first portion 121a on the substrate 11, and the orthographic projection of the source region 131b and/or the drain region 131c on the substrate 11 is located within the orthographic projection of the second portion 121b on the substrate 11. The thickness of the refractive part 121 has a tendency to gradually increase in a direction from the first part 121a to the second part 121 b. The first and

second portions

121a and 121b may be integrally provided or may be separately provided. The first portion 121a and the second portion 121b are integrally connected to each other, but the present invention is not limited thereto. The thickness of the refraction portion 121 tends to increase gradually along the direction from the first portion 121a to the second portion 121b, and the light passing through the refraction portion 121 is deflected toward the direction of the larger thickness of the refraction portion 121. It is understood that the light rays are deflected in a direction away from the first portion 121a or in a direction away from the center of the first portion 121a, i.e., the light rays are deflected in a direction away from the channel region 131a or in a direction away from the center of the channel region 131 a. Therefore, this structure can disperse the irradiation of light to the channel region 131a, and reduce the phenomenon of TFT characteristic shift due to photogenerated carriers.

The materials and optical properties of the first portion 121a and the second portion 121b may be the same or different. Illustratively, the first portion 121a and the second portion 121b are made of the same material, and can be fabricated simultaneously, thereby simplifying the process steps. Optionally, the light transmittance of the first portion 121a is smaller than that of the second portion 121 b. The light transmittance of the first portion 121a is smaller, and the light transmittance of the second portion 121b is larger, so that the irradiation of light to the channel region 131a can be slowed down, and particularly the direct irradiation of light to the channel region 131a can be avoided; the second aspect can slow down the light from irradiating the region connected to the channel region 131a, thereby indirectly affecting the channel region 131 a; the third aspect can improve the transmittance of the optical adjustment layer 12.

Referring to fig. 7 and 8, fig. 7 is a schematic structural diagram of an array substrate 1 according to still another embodiment of the present disclosure; FIG. 8 shows a schematic diagram of an optical path of the light adjusting layer of FIG. 7.

In some embodiments, as shown in fig. 7, the light adjusting layer 12 further includes a light shielding portion 122, an orthographic projection of the refraction portion 121 on the substrate 11 at least partially surrounds a periphery of an orthographic projection of the light shielding portion 22 on the substrate 11; an orthogonal projection of the channel region 131a on the substrate 11 is located within an orthogonal projection of the light shielding portion 122 on the substrate 11. As shown in fig. 8, the light shielding portion 122 can completely shield light incident on the channel region 131a from below the substrate 11, thereby maximally preventing the light from directly irradiating the channel region 131a and improving the stability of TFT characteristics. Further, the refraction portion 121 corresponds to the source region 131b and the drain region 131c, and light passing through the refraction portion 121 is deflected and dispersed, so that external light does not irradiate the peripheral side of the channel region 131a, and the channel region 131a is protected from light in all directions.

Alternatively, the material of the light shielding portion 122 may be or may include a material that is opaque to light, such as a metal material.

Alternatively, the material of the light shielding portion 122 may also be or may also include a light absorbing material, such as a black resin.

Referring to fig. 9, fig. 9 is a schematic structural diagram of an array substrate 1 according to still another embodiment of the present disclosure.

In some embodiments, the refraction portion 121 has two opposite surfaces in the thickness direction of the array substrate 1, and the two surfaces include a first surface P1 facing the active layer, and the first surface is concavely shaped facing away from the active layer. Specifically, as shown in fig. 9, the refraction part 121 has a first surface P1 and a second surface P2 opposite to each other in the thickness direction of the array substrate 1, wherein the first surface P1 faces the active layer 131, and the second surface P2 faces the substrate 11. Alternatively, the first surface P1 is concavely shaped toward the second surface P2, i.e., the first surface P1 is concavely shaped toward a direction away from the active layer 131. The light rays below the substrate 11 are incident through the second surface P2 and then exit through the first surface P1, and since the first surface P1 is a concave structure, the light rays can be deflected through the concave structure to form divergent light rays, so that the intensity of the light rays incident on the active layer 131 is reduced, the phenomenon of generating photo-generated carriers on the active layer 131 is reduced, and the accuracy of the TFT characteristics is improved.

Optionally, the material of the refraction portion 121 includes: AL, MO, amorphous silicon, black resin.

Optionally, the refractive index of the refraction portion 121 is 1.5-3.5. Within this range, the light is refracted by the refraction portion 121 and then is in a divergent state, the intensity of the light irradiation on the channel region 131a corresponding to the refraction portion 121 is weak, and the scattered light does not affect the channel regions 131a of the adjacent TFTs.

Referring to fig. 10, fig. 10 is a schematic structural diagram of an array substrate 1 according to another embodiment of the present disclosure.

In some embodiments, as shown in fig. 10, the second surface P2 is recessed toward a direction away from the substrate 11. The light passing through the second surface P2 is deflected and dispersed, so that the light irradiated to the channel region 131a is reduced, the light intensity is reduced, and the formation of photo-generated carriers is slowed down.

Optionally, with reference to fig. 10, the array substrate 1 further includes a first buffer layer 132 disposed between the substrate 11 and the optical adjustment layer 12, the first buffer layer 132 includes a supporting portion 132a for supporting the refraction portion 121, and the supporting portion 132a protrudes toward the surface of the refraction portion 121 to improve the stability of the refraction portion 121.

In some embodiments, as shown in fig. 10, the array substrate 1 further includes a second buffer layer 133, the light shielding layer or the refraction portion 121 may be disposed inside the second buffer layer 133 to reduce the thickness of the array substrate 1, and the second buffer layer 133 may be reused as a planarization layer to facilitate the manufacturing of subsequent films.

Furthermore, the refractive index of the supporting portion 132a is smaller than or equal to the refractive index of the refraction portion 121, so as to prevent the light from being deflected by the refraction portion 121 due to an excessively large deflection angle of the light passing through the supporting portion 132a, reduce the influence of the supporting portion 132a on the deflection effect of the refraction portion 121, and improve the reliability of the refraction portion 121. For the same or similar reasons, the convexity of the supporting portion 132a is smaller than the concavity of the refracting portion 121, that is, the convergence degree of the convex structure of the supporting portion 132a to the light is smaller than the divergence degree of the concave structure of the refracting portion 121 to the light, so that the arrangement can reduce the influence of the convex arrangement of the supporting portion 132a on the deflection effect of the refracting portion 121 to the light.

Referring to fig. 11, fig. 11 is a schematic structural diagram of an array substrate 1 according to another embodiment of the present disclosure.

In some embodiments, as shown in fig. 11, the optical adjustment layer 12 includes a plurality of sub optical adjustment layers 120 stacked in the thickness direction of the substrate 11, at least a part of the sub optical adjustment layers 120 having a refraction portion 121; the refraction portion 121 of at least a part of the sub-optical adjustment layer 120 is disposed corresponding to the channel region 131a in the thickness direction of the substrate 11. The plurality of sub-light adjusting layers 120 are arranged, and because the sub-light adjusting layers 120 are provided with the refraction parts 121, the refraction parts 121 on the sub-adjusting layers can deflect light for many times, the light is more diffused, namely, the light intensity emitted to the channel region 131a after being deflected for many times is reduced, the phenomenon that the channel region 131a generates photon-generated carriers after being illuminated is relieved, the accuracy of the characteristics of the TFT is improved, and the display effect is also improved.

The skilled person can adjust the optical characteristics of each sub-optical adjustment layer 120, such as transmittance, reflectivity, refractive index, etc., according to the actual requirement, so that each sub-optical adjustment layer 120 has the same or different optical characteristics, so as to improve the deflection effect of the light, i.e. reduce the irradiation of the light to the channel region 131a, and slow down the generation of the photo-generated carriers.

An embodiment of a second aspect of the present application provides a display device, including the array substrate 1 provided in any one of the above embodiments.

The display device provided by the embodiment of the application can slow down light irradiation to the active layer 131 to at least a certain extent to cause generation of photon-generated carriers, ensure the accuracy of the characteristics of the TFT, and improve the display effect of the display device. In addition, the display device provided in the embodiment of the present application adopts the array substrate 1 provided in any one of the above embodiments, so that the effect of the array substrate 1 of the above embodiments is achieved, and details are not repeated herein.

It can be understood that the display device provided in the embodiments of the present application may be any product or component having a display function, such as a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a door access, a console, an intelligent fixed-line phone, a navigator, and the like.

The embodiment of the third aspect of the present application provides a manufacturing method of an array substrate 1.

Referring to fig. 12 and 13, fig. 12 is a schematic flow chart illustrating a manufacturing method of an array substrate 1 according to an embodiment of the third aspect of the present application, and fig. 13 is a flow chart illustrating a manufacturing method of an array substrate 1 according to an embodiment of the third aspect of the present application. The array substrate 1 may be the array substrate 1 provided in any of the embodiments of the first aspect.

As shown in fig. 12 and 13, an embodiment of the present application provides a method for manufacturing an array substrate 1, including:

step S01: a refractive material layer is formed on the substrate 11, and the refractive material is patterned to form the optical adjustment layer 12, and the optical adjustment layer 12 includes the refractive portion 121. The refraction portion 121 has two opposite surfaces in the thickness direction of the array substrate 1, and at least one of the two surfaces is bent toward the substrate 11.

Step S02: a semiconductor material layer is formed on the refraction portion 121, and the semiconductor material layer is patterned to form an active layer 131 having a channel region 131 a. Wherein, along the thickness direction of the array substrate 1, an orthographic projection of at least a part of the active layer 131 on the substrate 11 is located within an orthographic projection of the refraction part 121 on the substrate 11.

Under the effect of the bending structure formed through the above steps, the light irradiated onto the active layer 131 through the refraction portion 121 is diffused, so that the amount of light actually irradiated onto the active layer 131 can be reduced, the light entering the active layer 131 is reduced, the phenomenon that the characteristics of the TFT are shifted due to the photo-generated carriers is reduced, the operation accuracy of the TFT is improved, and the display effect of the display panel and the reliability of the product are also improved.

As described above, the refraction part 121 has two opposite surfaces in the thickness direction of the array substrate 1, the two surfaces including the first surface P1 facing the active layer 131 and the second surface P2 facing the substrate 11. Optionally, the first surface P1 is a plane or a curved surface formed by being recessed towards the second surface P2; optionally, the second surface P2 is a plane or a curved surface formed by being recessed toward the first surface P1.

In step S01, a Half Tone Mask (HTM) process may be used to bend the first surface P1 toward the second surface P2 by controlling the exposure degree of the different regions.

Optionally, in step S01, a plurality of optical adjustment layers 120 are stacked on the substrate, at least a portion of the optical adjustment layers 120 has a refraction portion 121, and the light passing through the optical adjustment layers 120 is deflected and dispersed for a plurality of times, so that the amount of light actually irradiated onto the active layer 131 is less, or the light is dispersed and irradiated onto other regions without being irradiated onto the channel region 131a, thereby reducing the generation of photo-generated carriers.

Before step S01, the method further includes:

step S011: a substrate 11 is provided.

Step S012: a first buffer layer 132 is formed on the substrate 11.

Optionally, in step S012, the first buffer layer 132 with the supporting portion 132a is formed on the substrate 11, so that in a subsequent step, the refractive portion 131 structure in which the second surface P2 is recessed toward the first surface P1 can be manufactured.

Before step S02, the method further includes:

step S21: a second buffer layer 133 is formed on the optical adjustment layer 12. The second buffer layer is reused as a planarization layer, so that the subsequent film layer structure is convenient to manufacture.

Optionally, in step S21, the optical modifier layer 12 is located inside the second buffer layer 133, so as to reduce the thickness of the array substrate 1 and simplify the process.

The manufacturing method is simple, the process is mature, the array substrate 1 manufactured by the method can deflect light to slow down irradiation of the light to the active layer 131, photogenerated carriers generated on the active layer 131 are slowed down to at least a certain degree, the accuracy of the TFT characteristics is improved, and normal display is guaranteed.

While the application has been described with reference to a preferred embodiment, various modifications may be made and equivalents may be substituted for elements thereof without departing from the scope of the application. In particular, the technical features mentioned in the embodiments can be combined in any way as long as there is no structural conflict. The present application is not intended to be limited to the particular embodiments disclosed herein but is to cover all embodiments that may fall within the scope of the appended claims.

Claims

1. An array substrate, comprising:

a substrate;

an optical adjustment layer disposed on the substrate;

the active layer is arranged on one side, away from the substrate, of the light adjusting layer;

wherein, the light adjustment layer has refraction portion, and at least part the active layer is in orthographic projection on the substrate is located the refraction portion is in orthographic projection on the substrate, refraction portion be used for changing by the light ray path that the substrate is incited to reduce incidenting to the light quantity of active layer.

2. The array substrate of claim 1, wherein the refraction portion has two opposite surfaces in a thickness direction of the array substrate, at least one of the two surfaces being curved toward the other;

preferably, the active layer includes a channel region and a source region and a drain region located at both sides of the channel region;

an orthographic projection of at least one of the channel region, the source region and the drain region on the substrate is at least partially overlapped with an orthographic projection of the refraction part on the substrate.

3. The array substrate of claim 2, wherein an orthographic projection of the channel region on the substrate is located within an orthographic projection of the refraction portion on the substrate;

preferably, an orthographic projection of at least a part of the source region and/or the drain region on the substrate is within an orthographic projection of the refraction portion on the substrate.

4. The array substrate of claim 3, wherein the refraction portion comprises a first portion corresponding to the channel region and a second portion corresponding to the source and/or drain region;

the thickness of the refraction part has a gradually increasing trend along the direction from the first part to the second part;

preferably, the light transmittance of the first portion is smaller than that of the second portion.

5. The array substrate of claim 2, wherein the light adjusting layer further comprises a light shielding portion, and an orthographic projection of the refraction portion on the substrate at least partially surrounds a periphery of the orthographic projection of the light shielding portion on the substrate;

the orthographic projection of the channel region on the substrate is positioned in the orthographic projection of the light shielding part on the substrate.

6. The array substrate of claim 2, the two surfaces comprising a first surface facing the active layer, the first surface being recessed away from the active layer;

preferably, the material of the refraction portion includes: at least one of AL, MO, amorphous silicon, and black resin;

preferably, the refractive index of the refraction part is 1.5-3.5.

7. The array substrate of claim 2, the two surfaces comprising a second surface facing the substrate, the second surface being recessed away from the substrate;

preferably, the optical modulator further comprises a first buffer layer disposed between the substrate and the optical adjusting layer, wherein the first buffer layer comprises a supporting portion for supporting the refraction portion, and the supporting portion is disposed to protrude toward a surface of the refraction portion;

preferably, the refractive index of the support portion is less than or equal to the refractive index of the refraction portion.

8. The array substrate of claim 2, wherein the optical adjustment layer comprises a plurality of sub-optical adjustment layers stacked in a thickness direction of the substrate, at least a part of the sub-optical adjustment layers having the refraction portion;

and along the thickness direction of the substrate, at least part of the refraction part of the sub-light adjusting layer is correspondingly arranged with the channel region.

9. A display device, comprising: the display panel of any one of claims 1 to 8.

10. A manufacturing method of an array substrate is characterized by comprising the following steps:

forming a refractive material layer on a substrate, and patterning the refractive material layer to form a refractive part having two opposite surfaces in a thickness direction of the array substrate, at least one of the two surfaces being curved toward the other;

forming a semiconductor material layer on the refraction part, patterning the semiconductor material layer to form an active layer with a channel region, wherein the orthographic projection of at least part of the active layer on the substrate is positioned in the orthographic projection of the refraction part on the substrate along the thickness direction of the array substrate.