CN113809062A - Light receiving device with light amplification function - Google Patents
Light receiving device with light amplification function Download PDFInfo
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- CN113809062A CN113809062A CN202111064735.7A CN202111064735A CN113809062A CN 113809062 A CN113809062 A CN 113809062A CN 202111064735 A CN202111064735 A CN 202111064735A CN 113809062 A CN113809062 A CN 113809062A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/024—Arrangements for cooling, heating, ventilating or temperature compensation
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- Light Receiving Elements (AREA)
Abstract
The invention discloses a light receiving device with a light amplification function, which is applied to the field of light devices and aims at solving the problem that the conventional light receiving device is difficult to meet the requirement of long-distance transmission; the optical receiving device adopts the receiving TO of the integrated semiconductor optical amplifier; the receiving TO is internally integrated with the SOA chip, the SOA chip can effectively amplify optical signals with the wavelength range of 1270-1330 nm, the amplification factor can reach 20db, namely, the energy of the optical signals coupled TO the PD chip is increased, the sensitivity cannot be improved by 20db due TO the noise problem of the SOA chip, the error-free sensitivity can reach-26 dbm through testing, the 5E-5 bit error rate sensitivity can reach-31 dbm through testing, and the optical receiving device can completely meet the requirements of transmission distances of 40km and 80 km.
Description
Technical Field
The invention belongs to the field of optical devices, and particularly relates to a light receiving device technology.
Background
The existing light receiving device has single function and cannot meet the requirements of high-speed and long-distance transmission. Taking a 25G optical device as an example, the sensitivity of the optical receiving device using the PIN PD is about-12 dbm (error-free) and can meet the transmission requirement of 10km distance, the sensitivity of the optical receiving device using the APD is about-19 dbm (error-free) and can meet the transmission requirement of 30km distance, the sensitivity requirement of 40km distance transmission in a communication protocol is lower than-23.5 dbm (error-free), the sensitivity requirement of 80km distance transmission is lower than-28 dbm (error rate of 5E-5), and the two requirements are difficult to achieve by the current optical receiving device.
Disclosure of Invention
In order TO solve the technical problem, the invention provides an optical receiving device with an optical amplification function, which is integrated with a Semiconductor Optical Amplifier (SOA) TO receive light TO.
The technical scheme adopted by the invention is as follows: a light receiving device with light amplification function adopts the receiving TO of an integrated semiconductor optical amplifier;
the method specifically comprises the following steps: the optical port adapter, the coupling adjusting ring, the focusing lens and the metal base; the optical port adapter is used for connecting an external standard jumper, and the coupling adjusting ring is used for connecting the optical port adapter and the metal base when in optical coupling; the focusing lens is used for converting light coming from the light port adapter into a collimated light beam; the metal seat is used for bearing the receiving TO of the focusing lens and the integrated semiconductor optical amplifier.
The optical fiber end face of the optical port adapter, which is close to the focusing lens end, is an inclined angle.
The integrated semiconductor optical amplifier further comprises an optical isolator which is arranged between the focusing lens and the receiving TO of the integrated semiconductor optical amplifier.
The optical isolator is a polarization independent isolator.
When the receiving TO of the integrated semiconductor optical amplifier is not provided with a lens, an external lens is arranged between the optical isolator and the receiving TO of the integrated semiconductor optical amplifier.
The receiving TO of the integrated semiconductor optical amplifier includes: the device comprises a semiconductor optical amplifier chip 3, an SOA chip substrate 5, a heat sink 6, a focusing lens 7, a photoelectric detector 8, a transimpedance amplifier 9 and a TO base 11; the SOA chip substrate 5 is used for bearing the semiconductor optical amplifier chip 3; the heat sink 6 is used for supporting the SOA chip substrate 5, the focusing lens 7, the photoelectric detector 8 and the transimpedance amplifier 9;
the semiconductor optical amplifier chip 3, the focusing lens 7, the photoelectric detector 8 and the transimpedance amplifier 9 are located on a main light path, an optical signal is coupled to enter the semiconductor optical amplifier chip 3 for amplification, the amplified optical signal is coupled to the photoelectric detector 8 through the focusing lens 7, the photoelectric detector 8 converts the received optical signal into an electric signal and inputs the electric signal to the transimpedance amplifier 9 for processing, and the transimpedance amplifier 9 outputs a voltage signal.
The receiving TO of the integrated semiconductor optical amplifier further comprises: the chip comprises a thermistor 4 and a semiconductor refrigerator 10, wherein the thermistor 4 is arranged on an SOA chip substrate 5, and the semiconductor refrigerator 10 is arranged below a transimpedance amplifier 9.
The receiving TO of the integrated semiconductor optical amplifier further includes a metal cap 1 for sealing the elements inside the entire optical receiving TO.
The receiving TO of the integrated semiconductor optical amplifier further comprises a sealing glass plate or lens 2 as an optical signal transmission window and a sealing metal cap.
The invention has the beneficial effects that: the optical receiving device is internally integrated with the SOA chip, the SOA chip can effectively amplify optical signals with the wavelength range of 1270-1330 nm, the amplification factor can reach 20db, namely, the energy of the optical signals coupled to the PD chip is increased, the sensitivity can not be improved by 20db due to the noise problem of the SOA chip, the error-free sensitivity can reach-26 dbm through testing, the 5E-5 bit error rate sensitivity can reach-31 dbm through testing, and the requirements on transmission distances of 40km and 80km are completely met.
Drawings
Fig. 1 is a cross-sectional view of a light receiving device of the present invention;
FIG. 2 is a view showing an optical path inside the light receiving device of the present invention;
fig. 3 is a front view of a light receiving TO of the present invention;
wherein, 1 is a metal pipe cap; 2 is a sealing glass sheet or a lens; 3 is semiconductor optical amplifier Chip (SOA Chip); 4 is a thermistor; 5 is an SOA chip substrate; 6 is a heat sink; 7 is a focusing lens; 8 is a Photodetector (PD); 9 is a transimpedance amplifier (TIA); 10 is a semiconductor cooler (TEC); and 11 is a TO base.
Detailed Description
In order to facilitate the understanding of the technical contents of the present invention by those skilled in the art, the present invention will be further explained with reference to the accompanying drawings.
As shown in fig. 1, the light receiving device of the present invention includes: the optical interface adapter, the coupling adjusting ring, the focusing lens, the optical isolator, the metal base and the receiving TO (SOA + PIN PD TO) of the integrated semiconductor optical amplifier.
Light mouth adapter: and the standard optical port is used for connecting an external standard jumper.
Coupling and adjusting ring: when optical coupling is performed, the optical port adapter is connected with the metal seat.
Lens: the light beam from the adapter is converted into a collimated light beam.
An optical isolator: the optical fiber coupler is used for isolating spontaneous emission light of a Semiconductor Optical Amplifier (SOA), and only a polarization-independent isolator can be used due to uncertainty of the spontaneous emission light of the SOA and polarization states of optical signals output by the optical port adapter.
A metal base: it functions TO carry the lens, opto-isolator and TO.
Reception TO of integrated semiconductor optical amplifier: amplifying the optical signal and converting the optical signal into an electrical signal for output.
The integrated semiconductor optical amplifier in the figure 1 receives TO and can directly converge optical signals into the waveguide of the SOA through the focusing lens, the scheme can also support the SOA + PIN PD TO without the lens, and only a proper external lens needs TO be added between the optical isolator and the TO.
The invention uses a polarization independent isolator which has no requirement on the polarization state of incident light, and the spontaneous radiation of the SOA and the output light of the optical port adapter have uncertain polarization states, so the polarization independent isolator is required to be used.
The optical path between the lenses in the invention is a parallel optical path, as shown in fig. 2, because the polarization-independent isolator needs to be placed in the parallel optical path when working normally, otherwise, both the insertion loss and the isolation degree can not meet the requirements.
The optical fiber end face of the optical port adapter close to the lens end is provided with an inclined angle, so that the light energy of the SOA spontaneous emission light which is re-coupled into the SOA after being reflected can be reduced, and the influence of the reflected light on the receiving performance is reduced. The angle of inclination of the end face of the optical fiber can be set to any angle, and is generally 4 °, 5 °, and 6 °.
The light energy emitted from and then returned to the SOA corresponds to one thousandth (-30db) of the SOA spontaneous emission when the fiber end face is 0 deg., and is two millionths (-56db) when the fiber angle is 5 deg..
The packaging process of the optical device comprises the following steps: the lens and the optical isolator are fixed on the metal base by using optical glue, the TO is fixed with the metal base in a sliding or press-fitting mode, and then the TO is reinforced by laser penetration welding. During coupling, set up suitable electric current and temperature and make TO normal work, input external light source input light and receive on the light mouthful adapter, read the photocurrent value of PD from the mirror image current monitoring of TO, adjust the position of light mouthful adapter and make the photocurrent value maximum, use fixed light mouthful adapter of laser welding, coupling adjustable ring and metal base.
As shown in fig. 3, the light receiving TO of the present invention includes: the device comprises a metal tube cap 1, a sealing glass sheet or lens 2, a semiconductor optical amplifier chip 3, a thermistor 4, an SOA chip substrate 5, a heat sink 6, a focusing lens 7, a photoelectric detector 8, a transimpedance amplifier 9, a semiconductor refrigerator 10 and a TO base 11;
and the metal pipe cap 1 is used for sealing elements inside the whole light receiving TO and preventing water vapor dust and other pollutants from entering.
A glass plate or lens 2 is sealed as an optical signal transmission window and the TO cap is sealed.
And a semiconductor optical amplifier Chip (SOA Chip)3 for amplifying the optical signal.
And the thermistor 4 is used for monitoring the temperature and providing a reference temperature for the TEC, is attached to the SOA chip substrate and is close to the SOA chip.
And the SOA chip substrate 5 is used for bearing the SOA chip and the thermistor.
And the heat sink 6 is used for supporting the SOA chip, the SOA chip substrate, the thermistor and the focusing lens and conducting the heat generated by the heat sink to the TEC.
And the focusing lens 7 is used for focusing and coupling the optical signal amplified by the SOA onto the PD chip.
And a Photodetector (PD)8 that converts the optical signal into a current signal.
A transimpedance amplifier (TIA)9 that converts the current signal of the photodetector into a voltage signal and outputs the voltage signal.
A semiconductor cooler (TEC)10, which needs to be temperature controlled by a TEC because a semiconductor optical amplifier needs a stable working temperature, specifically: the micro control unit of the external TO driving chip can read the temperature of the thermistor, compare the temperature with the set temperature, and control the current flowing TO the TEC so as TO control heating or cooling, so that the temperature of the thermistor is consistent with the set temperature.
The TO base 11, provides a support platform for internal components and provides an electrical interface TO external connections. The electrical interfaces are identified in fig. 2, the TEC control interfaces (TEC + and TEC-), the thermistor interfaces (Rth + and GND), the SOA control interfaces (SOA + and GND), the TIA power supply interfaces (VCC and GND), the differential signal output interfaces (OUTP and OUTN), and the monitor interface (RSSI).
The working principle of the optical receiving TO of the invention is as follows: optical signals enter the SOA chip through the external lens or the lens coupling of the TO pipe cap, the SOA chip is set at proper current and temperature, the SOA can amplify the optical signals, the amplified optical signals are coupled into the PD chip 8 through the focusing lens 7, the PD chip 8 converts the received optical signals into electric signals, and the electric signals are input into the TIA 9 TO be processed and output as voltage signals.
The specific packaging process of the optical receiving TO of the invention is as follows:
1, mounting the TIA on a cold surface of the TEC, and fixing by using silver adhesive;
2, mounting the PD chip on the TIA surface, and fixing by using silver adhesive;
3, mounting the TEC with the TIA and the PD on the TO base, and fixing the TEC with silver adhesive;
4, connecting a bonding pad required TO be used on the TIA and the PD TO a binding post corresponding TO the TO base in a routing mode;
5, mounting the SOA chip and the thermistor on the SOA chip substrate, and fixing by using silver adhesive;
6, mounting the substrate with the mounted SOA chip and the thermistor on a heat sink, and fixing the substrate with silver adhesive;
7, fixing the heat sink on the cold surface of the TEC;
8, connecting the SOA chip and the thermistor TO a binding post corresponding TO the TO base in a routing mode;
9, fixing the TO base on the jig, and connecting the TO base with an external driving circuit board through pins of the TO base;
setting 100mA current for the SOA + pin on the driving board to enable the SOA to work, wherein the SOA can emit a certain amount of spontaneous emission light at the moment, the VCC pin is set to be 3.3V voltage, and the RSSI pin is connected to a high-precision ammeter;
moving a focusing lens, coupling the spontaneous amplitude emission light of the SOA chip onto the PD chip as much as possible, monitoring the reading of an ammeter, and fixing the focusing lens on a heat sink through UV glue when the reading is maximum;
and 12, resistance welding the metal pipe cap TO the TO base under the vacuum or the environment filled with the protective gas.
The SOA and the PD are integrated and packaged in one TO, so that the size of a packaged device can be greatly reduced, and the stability of the device is improved.
The invention uses PIN PD as the photoelectric detector, because the optical signal has very big noise after SOA amplification, after APD amplifies again, the signal-to-noise ratio drops seriously, the performance is not as excellent as using PIN PD.
The TEC is used for stabilizing the working temperature of the SOA, and the device can be used at different environmental temperatures.
The optical signal amplified by the SOA is coupled into the PD by using the lens, and the optical signal can be coupled into the PD as much as possible by proper lens selection.
The TO tube cap can be a flat window glass type, and can also be an aspheric surface or other collimating lens tube caps, and the flat window glass tube caps are matched with external collimating lenses for use.
In the common optical receiving TO, only a PIN photoelectric detector (PIN PD) or an avalanche type photoelectric detector (APD) is arranged inside, the PIN photoelectric detector can meet the transmission of 25G signals in a distance of about 10km, the avalanche effect can amplify photo-generated current by about 10 times and can meet the transmission of 25G signals in a distance of 40km, an SOA chip can provide optical signal gain of about 100 times and can increase the transmission distance TO 80 km.
It will be appreciated by those of ordinary skill in the art that the embodiments described herein are intended to assist the reader in understanding the principles of the invention and are to be construed as being without limitation to such specifically recited embodiments and examples. Various modifications and alterations to this invention will become apparent to those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the claims of the present invention.
Claims (9)
1. A light receiving device with light amplification function is characterized in that the TO is received by adopting an integrated semiconductor optical amplifier; the light receiving device further includes: the optical port adapter, the coupling adjusting ring, the focusing lens and the metal base; the optical port adapter is used for connecting an external standard jumper, and the coupling adjusting ring is used for connecting the optical port adapter and the metal base when in optical coupling; the focusing lens is used for converting light coming from the light port adapter into a collimated light beam; the metal seat is used for bearing the receiving TO of the focusing lens and the integrated semiconductor optical amplifier.
2. A light receiving device with light amplification function as claimed in claim 1, wherein the end face of the optical fiber of the optical port adapter near the focusing lens end is at an inclined angle.
3. A light receiving device with a light amplification function as claimed in claim 1, further comprising an optical isolator provided between the focusing lens and the receiving TO of the integrated semiconductor optical amplifier.
4. A light receiving device with light amplification function as set forth in claim 3, wherein said optical isolator is a polarization-independent isolator.
5. A light-receiving device with a light amplification function as claimed in claim 3, further comprising an external lens provided between the optical isolator and the receiving TO of the integrated semiconductor optical amplifier when the receiving TO of the integrated semiconductor optical amplifier is not provided with the lens.
6. A light receiving device with a light amplification function as set forth in any one of claims 1 to 5,
the receiving TO of the integrated semiconductor optical amplifier includes: the device comprises a semiconductor optical amplifier chip (3), an SOA chip substrate (5), a heat sink (6), a focusing lens (7), a photoelectric detector (8), a transimpedance amplifier (9) and a TO base (11); the SOA chip substrate (5) is used for bearing a semiconductor optical amplifier chip (3); the heat sink (6) is used for supporting the SOA chip substrate 5, the focusing lens (7), the photoelectric detector (8) and the transimpedance amplifier (9);
the semiconductor optical amplifier chip (3), the focusing lens (7), the photoelectric detector (8) and the transimpedance amplifier (9) are located on a main light path, optical signals are coupled to enter the semiconductor optical amplifier chip (3) for amplification, the amplified optical signals are coupled to the photoelectric detector (8) through the focusing lens (7), the photoelectric detector (8) converts the received optical signals into electric signals, the electric signals are input to the transimpedance amplifier (9) for processing, and the transimpedance amplifier (9) outputs voltage signals.
7. A light receiving device with an optical amplifying function as claimed in claim 6, wherein the receiving TO of the integrated semiconductor optical amplifier further comprises: the semiconductor chip comprises a thermistor (4) and a semiconductor refrigerator (10), wherein the thermistor (4) is arranged on an SOA chip substrate (5), and the semiconductor refrigerator (10) is arranged below a transimpedance amplifier (9).
8. A light receiving device with light amplification function as claimed in claim 7, wherein the receiving TO of the integrated semiconductor optical amplifier further comprises a metal cap (1) for sealing the elements inside the whole light receiving TO.
9. A light receiving device with light amplification function as claimed in claim 8, wherein the receiving TO of the integrated semiconductor optical amplifier further comprises a sealing glass plate or lens (2) as a light signal transmission window and a sealing metal cap.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111064735.7A CN113809062A (en) | 2021-09-10 | 2021-09-10 | Light receiving device with light amplification function |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202111064735.7A CN113809062A (en) | 2021-09-10 | 2021-09-10 | Light receiving device with light amplification function |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114690341A (en) * | 2022-03-18 | 2022-07-01 | 武汉光迅科技股份有限公司 | TO packaging structure with light incoming detection function and manufacturing method thereof |
| CN115911139A (en) * | 2022-11-29 | 2023-04-04 | 山东中科际联光电集成技术研究院有限公司 | Overload-resistant light receiving module |
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- 2021-09-10 CN CN202111064735.7A patent/CN113809062A/en active Pending
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| CN114690341A (en) * | 2022-03-18 | 2022-07-01 | 武汉光迅科技股份有限公司 | TO packaging structure with light incoming detection function and manufacturing method thereof |
| CN115911139A (en) * | 2022-11-29 | 2023-04-04 | 山东中科际联光电集成技术研究院有限公司 | Overload-resistant light receiving module |
| CN115911139B (en) * | 2022-11-29 | 2023-10-27 | 山东中科际联光电集成技术研究院有限公司 | Overload-resistant light receiving assembly |
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