CN113805371A - Display panel - Google Patents
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- CN113805371A CN113805371A CN202010544150.4A CN202010544150A CN113805371A CN 113805371 A CN113805371 A CN 113805371A CN 202010544150 A CN202010544150 A CN 202010544150A CN 113805371 A CN113805371 A CN 113805371A
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- 239000000758 substrate Substances 0.000 claims abstract description 62
- 229910052751 metal Inorganic materials 0.000 claims abstract description 37
- 239000002184 metal Substances 0.000 claims abstract description 37
- 239000000463 material Substances 0.000 claims description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 9
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 6
- 229910000484 niobium oxide Inorganic materials 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Inorganic materials O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 239000012528 membrane Substances 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 149
- 239000010408 film Substances 0.000 description 14
- 239000004065 semiconductor Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000004973 liquid crystal related substance Substances 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 238000002310 reflectometry Methods 0.000 description 4
- 239000007769 metal material Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002355 dual-layer Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- NJWNEWQMQCGRDO-UHFFFAOYSA-N indium zinc Chemical compound [Zn].[In] NJWNEWQMQCGRDO-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The present invention provides a display panel, comprising: the display device comprises a first substrate, a plurality of pixel structures, a flat layer, a compensation layer, a second substrate and a display medium layer. The pixel structures are arranged on the first substrate and respectively comprise an active element, a reflective electrode and a metal layer. The reflective electrode is electrically connected with the active element, and the thickness of the reflective electrode is between 100 nanometers and 150 nanometers. The metal layer is arranged between the active element and the reflective electrode, and the thickness of the metal layer is between 20 nanometers and 50 nanometers. The flat layer is arranged between the first substrate and the reflective electrode. The metal layer is connected between the flat layer and the reflective electrode. The compensation layer covers the reflective electrode, and the thickness of the compensation layer is between 7 nanometers and 147 nanometers. The second substrate is arranged opposite to the first substrate. The display medium layer is arranged between the compensation layer and the second substrate.
Description
Technical Field
The present disclosure relates to display technologies, and particularly to a display panel.
Background
General thin film transistor liquid crystal display panels (TFT-LCDs) can be classified into three major categories, i.e., transmissive, reflective, and transflective, according to the use of light sources and the difference between thin film transistor array substrates (TFT arrays). The reflective TFT-LCD panel mainly uses a front-light source or an external light source as a light source, and a pixel electrode on the TFT array substrate is a reflective electrode made of metal or other materials with good reflective properties, and is suitable for reflecting the front light source or the external light source. In order to increase adhesion (adhesion) between the reflective electrode and the planarization layer, a transparent conductive film, such as Indium Tin Oxide (ITO), is usually disposed between the reflective electrode and the planarization layer. However, the provision of such a layer adds additional process steps and process variations. In other words, the yield is reduced and the production cost is increased.
Disclosure of Invention
The invention provides a display panel with larger process margin and higher production yield.
The display panel comprises a first substrate, a plurality of pixel structures, a flat layer, a compensation layer, a second substrate and a display medium layer. The pixel structures are arranged on the first substrate and respectively comprise an active element, a reflective electrode and a metal layer. The reflective electrode is electrically connected to the active device. The metal layer is arranged between the active element and the reflective electrode. The flat layer is arranged between the first substrate and the reflective electrode. The metal layer is connected between the flat layer and the reflective electrode. The compensation layer covers the reflective electrode, and the thickness of the compensation layer is between 7 nanometers and 147 nanometers. The second substrate is arranged opposite to the first substrate. The display medium layer is arranged between the compensation layer and the second substrate.
In an embodiment of the invention, a material of the reflective electrode of the display panel includes silver or a silver alloy, and a material of the metal layer includes aluminum, molybdenum, tungsten, copper, titanium, tantalum, or an alloy thereof.
In an embodiment of the invention, the display panel further includes a plurality of data lines. The data lines are respectively electrically connected with the active elements of the pixel structures, and the metal layer and the data lines are the same film layer.
In an embodiment of the invention, the display panel further includes a reflective film disposed on a surface of the first substrate opposite to the pixel structures, and the reflective film overlaps regions between the reflective electrodes of the pixel structures in a normal direction of the first substrate.
In an embodiment of the invention, the display panel further includes a dielectric layer disposed between the active device and the first substrate, and the dielectric layer overlaps with regions between the reflective electrodes of the pixel structures in a normal direction of the first substrate. The thickness of the dielectric layer is between 50 nanometers and 70 nanometers, and the refractive index of the dielectric layer is between 2.1 and 2.35.
In an embodiment of the invention, the compensation layer of the display panel includes a first sub-compensation layer and a second sub-compensation layer. The first sub-compensation layer is arranged between the second sub-compensation layer and the reflective electrode, and the refractive index of the first sub-compensation layer is larger than that of the second sub-compensation layer.
In an embodiment of the invention, a thickness of the first sub-compensation layer of the display panel is not greater than a thickness of the second sub-compensation layer.
In an embodiment of the invention, a material of the first sub-compensation layer of the display panel includes indium tin oxide or niobium oxide, and a material of the second sub-compensation layer includes silicon dioxide.
In an embodiment of the invention, a refractive index of the first sub-compensation layer of the display panel is between 1.8 and 2.35, and a refractive index of the second sub-compensation layer is between 1.3 and 1.55.
In an embodiment of the invention, a material of the compensation layer of the display panel includes niobium pentoxide or aluminum oxide.
In view of the above, in the display panel according to the embodiment of the invention, the metal layer interposed between the reflective electrode and the planarization layer can ensure the connection relationship between the reflective electrode and the planarization layer, which is beneficial to improving the production yield of the display panel. On the other hand, the provision of the metal layer not only simplifies the process steps of the display panel, but also further reduces the film thickness of the reflective electrode without reducing the reflectance of the display panel, thereby contributing to the reduction of the production cost of the display panel.
Drawings
Fig. 1 is a schematic top view of a display panel according to a first embodiment of the present invention;
FIG. 2 is a schematic cross-sectional view of the display panel of FIG. 1;
FIG. 3 is a schematic cross-sectional view of a display panel of a second embodiment of the present invention;
FIG. 4 is an enlarged schematic view of a partial area of the display panel of FIG. 3;
fig. 5 is a schematic cross-sectional view of a display panel of a third embodiment of the present invention;
fig. 6 is a schematic cross-sectional view of a display panel of a fourth embodiment of the present invention;
fig. 7 is a schematic cross-sectional view of a display panel of a fifth embodiment of the present invention.
Description of the reference numerals
10. 11, 12, 13, 14: a display panel;
101: a first substrate;
101a, 101b, 130 s: a surface;
102: a second substrate;
110: a gate insulating layer;
120: an insulating layer;
130. 130A: a planarization layer;
130 r: an opening;
135: an optical microstructure;
140: a metal layer;
150. 150A, 160: a compensation layer;
151: a first sub-compensation layer;
152: a second sub-compensation layer;
170: a reflective membrane;
180: a dielectric layer;
D. d': a drain electrode;
DL: a data line;
DML: a display medium layer;
G. g': a gate electrode;
GL: scanning a line;
LB1, LB 2: light rays;
PA: a pixel region;
PE: a reflective electrode;
PX, PX-A: a pixel structure;
s, S': a source electrode;
SC, SC': a semiconductor pattern;
t, T': an active element;
t1, t 1', t2, t3, t4, t5, t6, t 7: thickness;
x, Y: direction;
A-A': and (6) cutting lines.
Detailed Description
The foregoing and other technical matters, features and effects of the present invention will be apparent from the following detailed description of a preferred embodiment, which is to be read in connection with the accompanying drawings. Directional terms as referred to in the following examples, for example: up, down, left, right, front or rear, etc., are simply directions with reference to the drawings. Accordingly, the directional terminology is used for purposes of illustration and is in no way limiting. Some examples of the invention are set forth below to illustrate the disclosure in detail. Wherever possible, the same reference numbers will be used throughout the drawings and the description to refer to the same or like parts.
Fig. 1 is a schematic top view of a display panel according to a first embodiment of the invention. Fig. 2 is a schematic cross-sectional view of the display panel of fig. 1. Specifically, for the sake of clarity, fig. 1 only shows the scan lines GL, the data lines DL, and the first substrate 101 and the reflective electrodes PE of fig. 2. Referring to fig. 1 and fig. 2, the display panel 10 includes a first substrate 101, a second substrate 102, a display medium layer DML, and a plurality of pixel structures PX. The first substrate 101 and the second substrate 102 are disposed opposite to each other. The display medium layer DML is disposed between the first substrate 101 and the second substrate 102. The pixel structures PX are disposed on the first substrate 101 and located between the display medium layer DML and the first substrate 101. In the present embodiment, the display medium layer DML includes, for example, a plurality of liquid crystal molecules (not shown). That is, the display panel 10 is, for example, a liquid crystal display panel.
More specifically, the display panel 10 of the present embodiment is a reflective liquid crystal display panel. For example, the display panel 10 further includes a plurality of scan lines GL and a plurality of data lines DL. These scanning lines GL are arranged along the direction Y and extend in the direction X. These data lines DL are arranged along the direction X and extend in the direction Y. That is, the scan lines GL intersect the data lines DL and define a plurality of pixel areas PA of the display panel 10. The pixel structures PX are respectively disposed in the pixel areas PA, and each of the pixel structures PX includes a reflective electrode PE and an active device T electrically connected to each other. For example, the active device T of each pixel structure PX may be electrically connected to a corresponding scan line GL and a corresponding data line DL, but not limited thereto. The reflective electrode PE may be used to reflect light from the surrounding environment or the front light source, in addition to driving liquid crystal molecules (not shown) of the display medium layer DML, so as to achieve the display effect. In the present embodiment, the material of the reflective electrode PE may include a metal (e.g., silver), an alloy (e.g., silver alloy), a nitride of a metal material, an oxide of a metal material, an oxynitride of a metal material, or other suitable materials.
For example, In the embodiment, the display medium layer DML may be driven In an In-Plane Switching (IPS) mode or a Fringe Field Switching (FFS) mode, but the invention is not limited thereto. In other embodiments, the display dielectric layer DML may be driven in an Electrically Controlled Birefringence (ECB), Twisted Nematic (TN), Super Twisted Nematic (STN), Vertical Alignment (VA), or Optically Compensated Bend (OCB) mode. It should be understood that, under different driving modes, a conductive layer (e.g., a common electrode layer) may be further disposed on the second substrate 102 of the display panel, and an electric field formed between the conductive layer and the reflective electrode PE of the pixel structure PX may drive a plurality of liquid crystal molecules of the display medium layer DML to rotate to form an arrangement distribution corresponding to the magnitude of the electric field.
In this embodiment, the method for forming the active device T may include the following steps: the gate electrode G, the gate insulating layer 110, the semiconductor pattern SC, the source electrode S, the drain electrode D, and the insulating layer 120 are sequentially formed on the first substrate 101, but not limited thereto. The semiconductor pattern SC overlaps the gate electrode G in the normal direction of the first substrate 101. The source S and the drain D are overlapped with the semiconductor pattern SC and electrically connected to two different regions (e.g., a source region and a drain region) of the semiconductor pattern SC. For example, in the present embodiment, the gate G of the active device T is optionally disposed below the semiconductor pattern SC to form a bottom-gate thin film transistor (bottom-gate TFT), but the invention is not limited thereto. In other embodiments, the gate of the active device is also optionally disposed over the semiconductor pattern to form a top-gate thin film transistor (top-gate TFT). In the present embodiment, the source S, the drain D and the data line DL of the active device T are optionally the same layer, and the gate G and the scan line GL are optionally the same layer, but not limited thereto.
It should be noted that the gate G, the source S, the drain D, the semiconductor pattern SC, the gate insulating layer 110 and the insulating layer 120 may be respectively implemented by any gate, any source, any drain, any semiconductor pattern, any gate insulating layer and any insulating layer for a display panel, which are well known to those skilled in the art, and the gate G, the source S, the drain D, the semiconductor pattern SC, the gate insulating layer 110 and the insulating layer 120 may be respectively formed by any method known to those skilled in the art, which is not described herein again.
In this embodiment, the display panel 10 may further include a planarization layer 130 disposed on the insulating layer 120. The planarization layer 130 has an opening 130r exposing the drain D of the active device T. The reflective electrode PE is disposed on the planarization layer 130 and extends into the opening 130r to electrically connect to the drain D of the active device T. It should be noted that the pixel structure PX of the display panel 10 further includes a metal layer 140 disposed between the reflective electrode PE and the planarization layer 130 (or the active device T). In detail, the metal layer 140 covers the planarization layer 130 and extends into the opening 130r of the planarization layer 130 to be directly electrically connected to the drain D of the active device T, and the reflective electrode PE directly covers the metal layer 140 to be electrically connected to the drain D of the active device T. In the embodiment, the surface 130s of the planarization layer 130 may be provided with a plurality of optical microstructures 135 to increase the uniformity of the light emitted from the external light source after being reflected by the reflective electrode PE, but the invention is not limited thereto.
It should be noted that the metal layer 140 is connected between the flat layer 130 and the reflective electrode PE, so as to effectively increase the adhesion between the reflective electrode PE and the flat layer 130 to prevent the reflective electrode PE from being peeled off from the flat layer 130, which is helpful to improve the production yield of the display panel 10. On the other hand, in the present embodiment, the reflective electrode PE of the pixel structure PX and the metal layer 140 may be aligned with each other in the normal direction of the surface 101a of the first substrate 101. That is, the reflective electrode PE and the metal layer 140 of the pixel structure PX can share the same mask and be formed in the same etching step, and no additional process step is required to form the metal layer 140. Accordingly, the process of the pixel structure PX can be simplified.
On the other hand, the metal layer 140 and the reflective electrode PE have a thickness t1 and a thickness t2, respectively, in the normal direction of the surface 101a of the first substrate 101. For example, the thickness t1 of the metal layer 140 is between 20 nm and 50 nm, and the thickness t2 of the reflective electrode PE is between 100 nm and 150 nm. In the present embodiment, the material of the metal layer 140 may include, but is not limited to, aluminum, molybdenum, tungsten, copper, titanium, tantalum, or alloys thereof. Specifically, since the material used for the metal layer 140 has a reflectance greater than a certain value (for example, a reflectance greater than 75% in the visible light band), the film thickness of the reflective electrode PE can be further reduced by disposing the metal layer 140 without reducing the reflectance of the pixel structure PX, which is helpful for reducing the production cost of the display panel 10.
Furthermore, in order to prevent the reflective electrode PE from being oxidized in the subsequent process to decrease its reflectivity, the display panel 10 may further include a compensation layer 150 covering the reflective electrode PE. In the present embodiment, the thickness t3 of the compensation layer 150 in the normal direction of the surface 101a of the first substrate 101 may be between 7 nm and 147 nm. For example, in the present embodiment, the compensation layer 150 may be a single layer structure, and the material thereof may include Indium Tin Oxide (ITO), indium zinc oxide (ind)indium zinc oxide, IZO), aluminum oxide (Al)2O3) Niobium pentoxide (Nb)2O5) Or other materials having a high refractive index (e.g., a refractive index between 1.8 and 2.35). However, the invention is not limited thereto, and according to other embodiments, the compensation layer covering the reflective electrode PE may be a stacked structure of multiple layers of materials, such as a stacked structure of a material layer with a high refractive index and a material layer with a low refractive index, and the material of the compensation layer may include niobium oxide (NbO), silicon dioxide (SiO), or the like2) Indium Tin Oxide (ITO), or combinations thereof.
It should be noted that, by selecting the material and the film thickness of the compensation layer 150, the optical performance (e.g., white balance, reflectivity) of the pixel structure PX (or the display panel 10) can also be improved. In this embodiment, the display panel 10 may further include a compensation layer 160 disposed on the second substrate 102. For example, a plurality of color filter patterns (not shown) and a light blocking pattern layer (not shown) may be disposed between the compensation layer 160 and the second substrate 102, but not limited thereto. The material of the compensation layer 160 may include an inorganic insulating material (e.g., silicon oxide or silicon nitride) or an organic insulating material (e.g., organic resin).
The present disclosure will be described in detail below with reference to other embodiments, wherein like components are denoted by like reference numerals, and descriptions of the same technical content are omitted, and reference is made to the foregoing embodiments for omitting details.
Fig. 3 is a schematic cross-sectional view of a display panel of a second embodiment of the present invention. Fig. 4 is an enlarged schematic view of a partial region of the display panel of fig. 3. Referring to fig. 3 and 4, the difference between the display panel 11 of the present embodiment and the display panel 10 of fig. 2 is: the composition of the compensation layer covering the reflective electrode is different. Specifically, the compensation layer 150A of the display panel 11 includes a first sub-compensation layer 151 and a second sub-compensation layer 152. The first sub-compensation layer 151 is disposed between the reflective electrode PE and the second sub-compensation layer 152.
Note that, in the present embodiment, the refractive index of the first sub compensation layer 151 is greater than the refractive index of the second sub compensation layer 152. For example, the refractive index of the first sub-compensation layer 151 may be between 18 to 2.35, and the refractive index of the second sub-compensation layer 152 may be between 1.3 to 1.55, but not limited thereto. On the other hand, a thickness t4 of the first sub compensation layer 151 in the normal direction of the surface 101a of the first substrate 101 may be less than a thickness t5 of the second sub compensation layer 152 in the normal direction of the surface 101a of the first substrate 101. However, the present invention is not limited thereto, and according to other embodiments, the thickness of the first sub compensation layer may also be equal to the thickness of the second sub compensation layer. For example, in the present embodiment, the material of the first sub-compensation layer 151 may include Indium Tin Oxide (ITO) or niobium oxide (NbO), and the material of the second sub-compensation layer 152 may include silicon dioxide (SiO)2) And the thickness t4 of the first sub-compensation layer 151 may be between 16 nm and 22 nm, and the thickness t5 of the second sub-compensation layer 152 may be between 30 nm and 150 nm, but not limited thereto.
Particularly, since the compensation layer 150A of the present embodiment is a dual-layer stacked structure, the optical design margin of the display panel 11 can be increased by matching the material and the film thickness of the two sub-compensation layers.
Fig. 5 is a schematic cross-sectional view of a display panel of a third embodiment of the present invention. Referring to fig. 5, the difference between the display panel 12 of the present embodiment and the display panel 10 of fig. 2 is: the active elements of the pixel structure have different structures. In the present embodiment, the gate electrode G ' of the active device T ' of the pixel structure PX-a is disposed above the semiconductor pattern SC ' to form a top gate type thin film transistor (top-gate TFT). In detail, the source S 'and the drain D' of the active device T 'are disposed on the planarization layer 130A, and sequentially penetrate through the planarization layer 130A, the insulating layer 120 and the gate insulating layer 110 to electrically connect two different regions (e.g., a source region and a drain region) of the semiconductor pattern SC'.
On the other hand, in the present embodiment, the metal layer 140A of the pixel structure PX-a and the source S ' and the drain D ' of the active device T ' are optionally the same film layer. That is, a portion of the metal layer 140A of the present embodiment can be used as the drain D 'of the active device T'. Accordingly, the process steps of the pixel structure PX-A can be simplified. It should be understood that, similar to the display panel 10 of fig. 1 and fig. 2, the source S ' and the drain D ', the metal layer 140A, and the plurality of data lines (not shown) of the active device T ' of the present embodiment may belong to the same film layer, but not limited thereto. It is noted that, in the present embodiment, the thickness T1 ' of the metal layer 140A in the normal direction of the surface 101a of the first substrate 101 may be smaller than the thickness T6 of the source S ' of the active device T ' in the normal direction of the surface 101a of the first substrate 101. However, the invention is not limited thereto, and according to other embodiments, the thickness of the metal layer may be equal to the thickness of the source (or drain) of the active device.
Fig. 6 is a schematic cross-sectional view of a display panel of a fourth embodiment of the present invention. Referring to fig. 6, the main differences between the display panel 13 of the present embodiment and the display panel 10 of fig. 2 are: the composition of the display panel is different. Specifically, the display panel 13 further includes a reflective film 170 disposed on a side surface 101b of the first substrate 101 facing away from the pixel structure PX. Generally, light from the outside (e.g., the light beam LB1) can be transmitted toward the second substrate 102 (i.e., the light-emitting direction of the display panel 13) by reflection of the reflective electrode PE. By overlapping the reflection film 170 with the regions between the reflective electrodes PE of the pixel structures PX in the normal direction of the surface 101a of the first substrate 101, the light (for example, light LB2) not irradiated on the reflective electrodes PE of the pixel structures PX can be reflected back to the display medium layer DML, so as to improve the overall reflectivity of the display panel 13. In the embodiment, the reflective film 170 is disposed on the surface 101b of the first substrate 101 in a whole surface, but the invention is not limited thereto.
Fig. 7 is a schematic cross-sectional view of a display panel of a fifth embodiment of the present invention. Referring to fig. 7, the main differences between the display panel 14 of the present embodiment and the display panel 10 of fig. 2 are: the composition of the display panel is different. Specifically, the display panel 14 further includes a dielectric layer 180 disposed between the first substrate 101 and the active device T. Generally, light from the outside (e.g., the light ray LB1) can be transmitted toward the second substrate 102 (i.e., the light-emitting direction of the display panel 14) by reflection of the reflective electrode PE. By overlapping the dielectric layer 180 with the regions between the reflective electrodes PE of the pixel structures PX in the normal direction of the surface 101a of the first substrate 101, the light (e.g., light LB2) not irradiated on the reflective electrodes PE of the pixel structures PX can be reflected back to the display dielectric layer DML, so as to improve the overall reflectivity of the display panel 14.
For example, the thickness t7 of the dielectric layer 180 in the normal direction of the surface 101a of the first substrate 101 may be between 50 nm and 70 nm, and the refractive index of the dielectric layer 180 may be between 2.1 and 2.35, but not limited thereto. The material of dielectric layer 180 includes niobium pentoxide (Nb2O5), or other material with a high refractive index. In the embodiment, the dielectric layer 180 is disposed on the surface 101b of the first substrate 101 in a whole surface, but the invention is not limited thereto. In other embodiments, the dielectric layer may also be a plurality of optical patterns separated from each other, and the optical patterns are respectively overlapped on the areas between the reflective electrodes PE of the pixel structures PX.
As described above, in the display panel according to an embodiment of the invention, the metal layer interposed between the reflective electrode and the planarization layer can ensure the connection relationship between the reflective electrode and the planarization layer, which is helpful for improving the production yield of the display panel. On the other hand, the provision of the metal layer not only simplifies the process steps of the display panel, but also further reduces the film thickness of the reflective electrode without reducing the reflectance of the display panel, thereby contributing to the reduction of the production cost of the display panel.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (10)
1. A display panel, comprising:
a first substrate;
a plurality of pixel structures disposed on the first substrate, each pixel structure comprising:
an active element;
the reflective electrode is electrically connected with the active element;
the metal layer is arranged between the active element and the reflective electrode;
a planar layer disposed between the first substrate and the reflective electrode, wherein the metal layer is connected between the planar layer and the reflective electrode;
a compensation layer covering the reflective electrode;
a second substrate disposed opposite to the first substrate; and
and the display medium layer is arranged between the compensation layer and the second substrate.
2. The display panel of claim 1, wherein the material of the reflective electrode comprises silver or silver alloy, and the material of the metal layer comprises aluminum, molybdenum, tungsten, copper, titanium, tantalum or the alloy thereof.
3. The display panel of claim 1, further comprising a plurality of data lines electrically connected to the plurality of active devices of the plurality of pixel structures, respectively, wherein the metal layer and the plurality of data lines are the same film layer.
4. The display panel according to claim 1, further comprising:
and the reflecting membrane is arranged on one side surface of the first substrate, which is deviated from the pixel structures, and the reflecting membrane is overlapped with the areas among the plurality of reflecting electrodes of the plurality of pixel structures in the normal direction of the first substrate.
5. The display panel according to claim 1, further comprising:
and the dielectric layer is arranged between the active element and the first substrate and is overlapped with the areas among the plurality of reflective electrodes of the plurality of pixel structures in the normal direction of the first substrate, wherein the thickness of the dielectric layer is between 50 nanometers and 70 nanometers, and the refractive index of the dielectric layer is between 2.1 and 2.35.
6. The display panel according to claim 1, wherein the compensation layer comprises:
the first sub-compensation layer is arranged between the second sub-compensation layer and the reflective electrode, and the refractive index of the first sub-compensation layer is larger than that of the second sub-compensation layer.
7. The display panel according to claim 6, wherein the thickness of the first sub-compensation layer is not greater than the thickness of the second sub-compensation layer.
8. The display panel according to claim 6, wherein the material of the first sub-compensation layer comprises indium tin oxide or niobium oxide, and the material of the second sub-compensation layer comprises silicon dioxide.
9. The display panel according to claim 6, wherein the refractive index of the first sub-compensation layer is between 1.8 and 2.35, and the refractive index of the second sub-compensation layer is between 1.3 and 1.55.
10. The display panel according to claim 1, wherein the material of the compensation layer comprises niobium pentoxide or aluminum oxide.
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| CN202010544150.4A CN113805371A (en) | 2020-06-15 | 2020-06-15 | Display panel |
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| CN202010544150.4A CN113805371A (en) | 2020-06-15 | 2020-06-15 | Display panel |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI843535B (en) * | 2022-07-25 | 2024-05-21 | 瀚宇彩晶股份有限公司 | Display panel |
| TWI847680B (en) * | 2022-10-26 | 2024-07-01 | 瀚宇彩晶股份有限公司 | Display panel |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6600536B1 (en) * | 1999-03-31 | 2003-07-29 | Hitachi, Ltd. | Reflection type liquid crystal display apparatus with insulating film between electrodes and reflection layer |
| JP2004145024A (en) * | 2002-10-24 | 2004-05-20 | Advanced Display Inc | Tft array substrate, semi-transmissive or reflective liquid crystal display using the same, and method of manufacturing tft array substrate |
| US20040233359A1 (en) * | 2003-05-23 | 2004-11-25 | Lg. Philips Lcd Co., Ltd. | Transflective liquid crystal display device and fabricating method thereof |
| JP2006276357A (en) * | 2005-03-29 | 2006-10-12 | Sanyo Epson Imaging Devices Corp | Liquid crystal apparatus and electronic equipment |
| KR20130010339A (en) * | 2011-07-18 | 2013-01-28 | 엘지디스플레이 주식회사 | Organic electro-luminescence display and manufacturing method thereof |
| CN109683385A (en) * | 2019-02-18 | 2019-04-26 | 京东方科技集团股份有限公司 | A kind of reflective display screen and preparation method thereof and display device |
-
2020
- 2020-06-15 CN CN202010544150.4A patent/CN113805371A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6600536B1 (en) * | 1999-03-31 | 2003-07-29 | Hitachi, Ltd. | Reflection type liquid crystal display apparatus with insulating film between electrodes and reflection layer |
| JP2004145024A (en) * | 2002-10-24 | 2004-05-20 | Advanced Display Inc | Tft array substrate, semi-transmissive or reflective liquid crystal display using the same, and method of manufacturing tft array substrate |
| US20040233359A1 (en) * | 2003-05-23 | 2004-11-25 | Lg. Philips Lcd Co., Ltd. | Transflective liquid crystal display device and fabricating method thereof |
| JP2006276357A (en) * | 2005-03-29 | 2006-10-12 | Sanyo Epson Imaging Devices Corp | Liquid crystal apparatus and electronic equipment |
| KR20130010339A (en) * | 2011-07-18 | 2013-01-28 | 엘지디스플레이 주식회사 | Organic electro-luminescence display and manufacturing method thereof |
| CN109683385A (en) * | 2019-02-18 | 2019-04-26 | 京东方科技集团股份有限公司 | A kind of reflective display screen and preparation method thereof and display device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI843535B (en) * | 2022-07-25 | 2024-05-21 | 瀚宇彩晶股份有限公司 | Display panel |
| TWI847680B (en) * | 2022-10-26 | 2024-07-01 | 瀚宇彩晶股份有限公司 | Display panel |
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