CN113794086B - Terahertz generation device based on diamond film and generation method thereof - Google Patents
Terahertz generation device based on diamond film and generation method thereof Download PDFInfo
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Abstract
The application discloses a terahertz generation device based on a diamond film and a generation method thereof. The terahertz generation device comprises a diamond film and a pumping light source, wherein the diamond film is a nanocrystalline diamond film, and the surface of the diamond film generates a light traction effect under the excitation of pumping light emitted by the pumping light source so as to radiate terahertz waves. The intensity of the terahertz waves generated by the diamond film can be optimized by changing the incident angle of the pump light, the energy density of the pump light and the polarization angle of the pump light. And the diamond film can also effectively radiate the elliptically polarized terahertz waves. The terahertz generation device disclosed by the application has high threshold power and high-efficiency stability, and has a wide application prospect in the field of terahertz functional devices.
Description
Technical Field
The invention belongs to the technical field of terahertz waveband devices, and particularly relates to a terahertz generation device based on a diamond film and a generation method thereof.
Background
Terahertz radiation refers to electromagnetic radiation with the frequency ranging from 0.1 to 10THz, is between microwave and infrared wave bands, and is a bridge for connecting electronics and photonics. The terahertz radiation has the characteristics of penetrability to various dielectric materials and nonpolar substances, low photon energy, excellent spectral resolution capability and the like, so that the terahertz radiation has important research value and wide development prospect in the fields of biomedicine, safety detection, substance property detection, high-speed communication and the like.
With the development of terahertz generation technology, detection technology and application technologies including time domain spectroscopy technology, imaging technology, radar and communication technology, the gap of terahertz is gradually filled up, and the application of terahertz in various fields is promoted.
The development of terahertz generation technology is closely related to the progress of terahertz technology. Therefore, there is a need for an apparatus and method for reliably and efficiently generating terahertz waves.
Disclosure of Invention
In order to solve the above technical problem, embodiments of the present disclosure provide a terahertz generation device based on a nanocrystalline diamond film and a generation method thereof to reliably and efficiently generate terahertz waves.
According to an aspect of the present disclosure, there is provided a terahertz generation device based on a diamond film, including a diamond film and a pump light source, wherein the diamond film is excited by pump light emitted from the pump light source and radiates terahertz waves, and the diamond film is a nanocrystalline diamond film having a grain size on the order of nanometers, preferably at least 50 nanometers.
In one embodiment of the present disclosure, the diamond film is an intrinsic, N-type or P-type doped nanocrystalline diamond film.
In one embodiment of the present disclosure, the diamond film-based terahertz generation device further includes a substrate on which the diamond film is laid. The substrate is made of a material that does not radiate and does not absorb terahertz waves. Such as quartz, sapphire, mica or high-resistivity silicon. Alternatively, the diamond film may also be present as being self-supporting, i.e., without the need for a substrate as described above.
In one embodiment of the disclosure, the pump light emitted by the pump light source to excite the diamond film is a laser with a center frequency of 600-1000nm, a pulse width of 20-50fs, and a repetition frequency of 1-100KHz, and preferably, the pump light is a laser with a center frequency of 800nm, a pulse width of 35fs, and a repetition frequency of 1 KHz.
According to another aspect of the present disclosure, there is provided a diamond film-based terahertz generation method including:
preparing a diamond film;
the pumping light source emits pumping light to irradiate the diamond film to generate transmitted or reflected terahertz waves,
wherein the diamond film is a nanocrystalline diamond film having a grain size on the order of nanometers, preferably at least 50 nanometers.
In one embodiment of the present disclosure, the terahertz generation method further includes: the intensity of the terahertz wave radiated by the diamond film is optimized by changing the incidence angle of the pump light or the energy density of the pump light or the polarization angle of the pump light.
In one embodiment of the present disclosure, the terahertz generating method further includes: and the diamond film radiates elliptically polarized terahertz waves by changing the polarization state of the pump light.
Compared with the prior art, the terahertz generation device based on the diamond film and the excitation method thereof have the following beneficial effects:
(1) According to the terahertz radiation source, the diamond film is used as the terahertz radiation source, so that the generated terahertz radiation intensity is high, and the radiation performance is stable.
(2) The present disclosure can generate elliptically polarized terahertz waves by using a diamond film as a terahertz radiation source, which is of great significance in polarization detection, chiral analysis, terahertz spintronics, and the like.
(3) The terahertz radiation source is easy to prepare, simple in structure and high in repeatability by using the diamond film as the terahertz radiation source, so that the terahertz radiation source becomes a miniaturized terahertz source, and optionally, the traditional semiconductor silicon can be used as a substrate, so that the terahertz radiation source can be integrated in traditional photoelectric functional devices and integrated terahertz systems.
Drawings
The above and other objects, features and advantages of the present disclosure will become more apparent from the following detailed description of the embodiments of the present disclosure when taken in conjunction with the accompanying drawings. The accompanying drawings are included to provide a further understanding of the embodiments of the disclosure and are incorporated in and constitute a part of this specification, illustrate embodiments of the disclosure and together with the description serve to explain the principles of the disclosure and not to limit the disclosure. In the drawings, like reference numbers generally represent like parts or steps.
Fig. 1 is a schematic structural view of a diamond film-based terahertz wave generating apparatus according to one embodiment of the present disclosure.
Fig. 2 is a schematic view of the terahertz wave generating apparatus shown in fig. 1 generating terahertz waves by transmission and reflection.
FIG. 3 shows 2.12mJ/cm based on the generation of transmission type terahertz wave 2 And pumping the time domain spectrum of the terahertz wave generated by pumping the nanocrystalline diamond film by the femtosecond laser with the energy density of the pump light.
FIG. 4 shows 2.12mJ/cm based on the generation of a reflection type terahertz wave 2 And pumping the time domain spectrum of the terahertz wave generated by pumping the nanocrystalline diamond film by the femtosecond laser with the energy density of the pump light.
FIG. 5 shows 2.12mJ/cm based on the generation of a transmission type terahertz wave 2 And the dependence graph of the amplitude of the terahertz wave generated by pumping the nanocrystalline diamond film by the femtosecond laser with the pump light energy density on the polarization angle of the pump light.
FIG. 6 shows 2.12mJ/cm based on the generation of a reflection type terahertz wave 2 And (3) a dependence relation graph of the amplitude of the terahertz waves generated by pumping the nanocrystalline diamond film by the femtosecond laser of the pump light energy density on the polarization angle of the pump light.
FIG. 7 shows 2.12mJ/cm based on the generation of transmission type terahertz waves 2 The femtosecond laser pumping nanocrystalline diamond film of the pumping light energy density generates a relation graph of the amplitude of the terahertz wave changing along with the polarization state of the pumping light.
FIG. 8 shows 2.12mJ/cm based on the generation of a reflection type terahertz wave 2 The femtosecond laser pumping nanocrystalline diamond film of the pumping light energy density generates a relational graph of the amplitude of terahertz waves relative to the polarization state change of the pumping light.
FIG. 9 is a graph showing the dependence of the amplitude of terahertz waves generated by a nanocrystalline diamond film on the energy density of pump light in the case of transmission-type terahertz wave generation.
FIG. 10 is a graph showing the dependence of the amplitude of terahertz waves generated by a nanocrystalline diamond film on the energy density of pump light in the case of generation of a reflection-type terahertz wave.
Detailed Description
Hereinafter, example embodiments according to the present disclosure will be described in detail with reference to the accompanying drawings. It should be understood that the described embodiments are only some of the embodiments of the present disclosure, and not all of the embodiments of the present disclosure, and it is to be understood that the present disclosure is not limited by the example embodiments described herein.
SUMMARY
There are two main important research directions for terahertz generation technology: (1) researching a high-efficiency terahertz source. Research on a narrow-band terahertz source that can be applied to communication technology and fine spectrum has mainly focused on the application of a nonlinear optical mixing method and a semiconductor laser technology, such as a quantum cascade laser. The research on the broadband terahertz source mainly utilizes femtosecond laser to excite a material to generate instantaneous polarization intensity or quick change of instantaneous current in a short time, so that terahertz pulses are radiated. The materials can be traditional semiconductor materials such as GaAs, inAs, znTe and the like, and can also be novel photoelectric materials such as graphene, transition metal chalcogenide, topological insulators, hybrid perovskites and the like. (2) And characterizing the surface and interface characteristics of the material by utilizing terahertz emission spectrum. The surface and interface of a material involve many physicochemical processes such as carrier kinetic processes, charge transfer, and chemical bond formation. When the material is pumped by ultrafast laser, the terahertz radiation signal generated by the material can provide rich spectral information such as amplitude, phase and polarization. The spectral information is very sensitive to physical quantities such as doping, carrier concentration, nonlinear polarizability and the like of the material, so that the material surface interface characteristics such as crystal surface symmetry, carrier distribution, surface energy band bending and the like can be further deduced. Such as the surface depletion electric field of GaAs, the transient photocurrent of graphite, and the dynamic photo-pulling effect of graphene. Therefore, the terahertz emission spectrum is a method capable of nondestructively detecting the surface and interface characteristics of the material, and meanwhile, the deep research on the material characteristics is also beneficial to finding more novel terahertz sources. Therefore, due to the excellent characteristics of high electron mobility, high photoelectric conversion rate, correlation between physicochemical characteristics and surface and interface states of the layered material and the like, novel photoelectric materials such as graphene, transition metal chalcogenide, topological insulator and hybrid perovskite become research hotspots in the field of terahertz emission. However, when high-intensity terahertz pulses are required, femtosecond lasers are prone to damage materials when focused on these layered materials. And it is difficult to efficiently radiate an elliptically polarized terahertz wave when a sample is excited by circularly polarized pump light.
Diamond, as an allotrope of graphene, has excellent characteristics of high carrier mobility, highest thermal conductivity, strongest mechanical hardness, transparency in a wavelength range from far ultraviolet to infrared and the like, so that the diamond has the potential of becoming a high-strength and stable terahertz source. At present, the inventor finds that the single crystal intrinsic diamond film and the single crystal nitrogen-doped diamond film cannot radiate terahertz waves due to low surface carrier concentration in research work; the bulk material of the polycrystalline diamond can radiate terahertz waves, but the radiation efficiency is limited due to the fact that the material is thick and has strong absorption on terahertz radiation, and when the bulk material of the polycrystalline diamond is excited by the elliptically polarized pump light, the elliptically polarized terahertz waves cannot be radiated. These problems limit the development of diamond as a terahertz source and future applications in related terahertz functional devices.
Aiming at the defects and the shortcomings, the inventor provides the terahertz radiation device and the excitation method thereof to solve the problems that the terahertz radiation efficiency of single crystals and bulk diamond is low, and the elliptically polarized terahertz waves cannot be effectively radiated.
The inventor provides a terahertz wave generating device and a terahertz wave generating method based on a diamond film, wherein the terahertz wave generating device and the terahertz wave generating method utilize an intrinsic, N-type or P-type doped nanocrystalline diamond film as a terahertz wave source, the nanocrystalline diamond film is a three-dimensional material, the arrangement among crystal grains is disordered, and SP (phase position) is formed on or among crystal grain interfaces 2 Bonds, there are a large number of free carriers. When the nanocrystalline diamond film is irradiated by pump light emitted by a pump light source, a large number of free carriers on the surface of the nanocrystalline diamond film accelerate under the drive of the pump light to generate a light traction effect, and terahertz waves with high emission intensity and stable radiation performance are radiated.
Exemplary devices
Fig. 1 shows a diamond film-based terahertz wave generating apparatus 10 according to one embodiment of the present disclosure. As shown in FIG. 1, the present embodiment is based onThe terahertz wave generating apparatus 10 for a diamond film includes a diamond film 1 and a pump light source 2. In the present embodiment, the grain size of the diamond film 1 is on the order of nanometers, preferably at least 50 nanometers, and the diamond film 1 exists self-supporting; the pump light emitted by the pump light source 2 has a center frequency of 800nm, a pulse width of 35fs, a repetition frequency of 1KHz, and a power density of 2.12mJ/cm 2 Is a femtosecond laser.
The diamond film may be supported by a substrate made of a material that does not radiate and absorb terahertz waves, such as quartz, sapphire, mica, or high-resistance silicon, or may exist as a self-supporting film without using the substrate for support.
The thickness of the diamond film may be 50nm to 1mm. The terahertz of 1mm diamond generates diamond with intensity larger than nanometer level because more free carriers exist on the surface. Therefore, in the examples provided in fig. 2 to 10, 1mm diamond was used as the subject of investigation.
Exemplary method
Illustrative examples of the terahertz generation method based on a diamond film of the present disclosure are:
preparing a diamond film, wherein the diamond film is a nanocrystalline diamond film with a grain size of nanometer scale;
the pumping light emitted by the pumping light source irradiates the diamond film and generates terahertz waves through transmission or reflection;
optimizing the intensity of terahertz waves generated by the diamond film by changing the incident angle of the pump light, the polarization angle of the pump light, the energy density of the pump light, and the incident angle of the pump light (including the incident from the surface of the diamond film and the incident from the back/basal surface of the diamond film);
the diamond film radiates the elliptically polarized terahertz waves by changing the polarization state of the pump light.
Fig. 2 shows a schematic diagram of a terahertz-wave generating apparatus generating a terahertz wave by transmission and reflection.
The following describes an exemplary method of the present disclosure in terms of changing the incident angle, the polarization state, and the energy density of the pump light.
Example 1
In the present example, as shown in fig. 2, when pump light is incident at an angle of-45 ° to 45 ° and pumps and excites the surface of the diamond film 1, zinc telluride is used as a detection crystal to detect terahertz waves radiated by the diamond film 1 on a transmission plane of-45 ° to 45 °;
when the pumping light is incident at an angle of-45 degrees or 45 degrees and pumps and excites the surface of the diamond film 1, the zinc telluride is used as a detection crystal to correspondingly detect the terahertz waves radiated by the diamond film 1 on a reflecting surface of-45 degrees or 45 degrees.
FIG. 3 shows that in the case of transmissive terahertz generation, the energy density is 2.12mJ/cm 2 The femtosecond laser pulse of horizontal polarization is used as a pumping light source, the femtosecond laser pulse is incident to the surface of the nanocrystalline diamond at an angle of 45 degrees, and zinc telluride is used as a detection crystal to detect a time domain spectrogram of a horizontal component and a vertical component of terahertz wave on a transmission plane of 45 degrees. As can be seen from fig. 3, under the excitation of the horizontally polarized pump light, there exist horizontal and vertical component terahertz waves, and the intensity of the horizontal component terahertz waves is large.
FIG. 4 shows that in the case of reflective terahertz generation, the energy density is 2.12mJ/cm 2 The femtosecond laser pulse of horizontal polarization is used as a pumping light source, the femtosecond laser pulse of the horizontal polarization is incident to the surface of the nanocrystalline diamond film at 45 degrees, and zinc telluride is used as a detection crystal to detect a time domain spectrogram of a horizontal component and a vertical component of terahertz waves on a reflecting surface at 45 degrees.
Example 2
This example differs from example 1 in that: under the condition of generating the transmission terahertz, the change relationship of the radiation intensity of the horizontal and vertical terahertz components of the nanocrystalline diamond film along with the polarization angle of the pump light is obtained by changing the polarization angle of the pump light, and the result is shown in fig. 5.
FIG. 5 shows the measured data at an energy density of 2.12mJ/cm 2 Under the excitation of the femtosecond laser, the radiation intensity of the horizontal and vertical terahertz components of the nano-scale diamond film is in a change relation with the polarization angle of the pump light. From the figure5 it can be seen that the horizontal and vertical terahertz component intensities show the change with the polarization angle of the pump light incident on the nanocrystalline diamond film
Wherein the radiation intensity of the horizontal and vertical terahertz components is substantially uniform in intensity value with the change in the polarization angle of the pump light, but the trend of change differs by pi/2 in phase.
Example 3
The present example differs from example 2 in that: under the condition of generating the reflection terahertz, the change relationship of the radiation intensity of the horizontal and vertical terahertz components of the nanocrystalline diamond film along with the polarization angle of the pump light is obtained by changing the polarization angle of the pump light, and the result is shown in fig. 6.
FIG. 6 shows the measured data at an energy density of 2.12mJ/cm 2 Under the excitation of the femtosecond laser, the radiation intensity of the horizontal and vertical terahertz components of the nanocrystalline diamond film is in a relation of change along with the polarization angle of the pumping light. It can be seen that the horizontal and vertical terahertz component intensities show up with the change of the pump polarization angle
Wherein the radiation intensity of the horizontal terahertz component is about half of that of the vertical terahertz component in intensity as a function of the polarization angle of the pump light, and the variation trends are different by pi/2 in phase.
Example 4
The present example differs from example 1 in that: in the case of terahertz generation by transmission, by changing the polarization state of the incident pump light, an elliptically polarized terahertz wave radiated by the nanocrystalline diamond film is obtained, and the result is shown in fig. 7.
FIG. 7 shows the measured data at an energy density of 2.12mJ/cm 2 The femtosecond laser pumps the horizontal and vertical radiated on the surface of the nanocrystalline diamond film by pumping light with different polarization states (including linear polarization state, elliptical polarization state and circular polarization state) through rotating the angle of the quarter-wave plateThe terahertz wave intensity of the direct component changes with the polarization state of the incident pump light. As can be seen from fig. 7, the intensity of the horizontal and vertical terahertz components appears as a change in the polarization state of the incident pump light
Wherein the radiation intensities of the horizontal and vertical terahertz components are substantially uniform in intensity with the change in the polarization angle of the pump light, but the variation trends are different by pi/2 in phase. Each point in fig. 7 is the terahertz electric field intensity extracted through the corresponding time domain signal, and thus by synthesizing horizontal and vertical terahertz components, time domain waveforms of terahertz waves of different polarization states, including linearly polarized, left-handed polarized, and right-handed polarized terahertz wave time domain waveforms, can be obtained.
Example 5
The present example differs from example 4 in that: in the case of generation of reflected terahertz, by changing the polarization state of the incident pump light, an elliptically polarized terahertz wave radiated by the nanocrystalline diamond film is obtained, and the result is shown in fig. 8.
FIG. 8 shows an energy density of 2.12mJ/cm 2 The femtosecond laser pumps terahertz wave intensities of horizontal and vertical components radiated on the surface of the nanocrystalline diamond film by pump light (including linear polarization state, elliptical polarization state and circular polarization state) with different polarization states through rotating the angle of the quarter wave plate, and the terahertz wave intensities are changed along with the polarization state of the incident pump light. It can be seen that the intensity of the horizontal terahertz component appears with the polarization state of the incident pump light
The intensity of the vertical terahertz component shows a special dependency relationship along with the polarization state of incident pump light.
Example 6
This example differs from example 1 in that: under the condition of generating the transmission terahertz, the pump light energy density is changed to obtain the change relationship between the radiation intensity of the horizontal and vertical terahertz components of the nanocrystalline diamond film and the pump light energy density, and the result is shown in fig. 9.
FIG. 9 is a graph showing the dependence of the amplitude of terahertz waves generated by a nanocrystalline diamond film on the energy density of pump light in the case of terahertz wave generation based on transmission. As can be seen from fig. 9, the horizontal and vertical terahertz component intensities increase linearly with pump light energy density. The energy density of the pump light reaches 4.25mJ/cm 2 The threshold power of the nanocrystalline diamond film is still not reached and the nanocrystalline diamond film is not damaged, which shows that diamond has the advantage of high threshold power as a terahertz source.
Example 7
The present example differs from example 6 in that: under the condition of generating the reflection terahertz, the energy density of the pump light is changed to obtain the change relationship between the radiation intensity of the horizontal and vertical terahertz components of the nanocrystalline diamond film and the energy density of the pump light, and the result is shown in fig. 10.
FIG. 10 shows 2.12mJ/cm based on the generation of a reflection type terahertz wave 2 The femtosecond laser pumping nanocrystalline diamond film of the pump light energy density generates a dependence graph of the amplitude of the terahertz wave on the pump light energy density. In fig. 10, the vertical terahertz component being a negative number indicates that the polarity of the time-domain signal thereof is opposite to the polarity of the horizontal terahertz component time-domain signal. As can be seen from fig. 10, the horizontal and vertical terahertz component intensities increase linearly with the pump optical energy density. As in example 6, the energy density of the pump light reached the maximum value that the inventors could provide at the time of the experiment, and the diamond film was not damaged.
The foregoing describes the general principles of the present disclosure in conjunction with specific embodiments, however, it is noted that the advantages, effects, etc. mentioned in the present disclosure are merely examples and are not limiting, and they should not be considered essential to the various embodiments of the present disclosure. Furthermore, the foregoing disclosure of specific details is for the purpose of illustration and description and is not intended to be limiting, since the disclosure will be described in detail with reference to specific details.
The previous description of the disclosed aspects is provided to enable any person skilled in the art to make or use the present disclosure. Various modifications to these aspects will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other aspects without departing from the scope of the disclosure. Thus, the present disclosure is not intended to be limited to the aspects shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
The foregoing description has been presented for purposes of illustration and description. Furthermore, the description is not intended to limit embodiments of the disclosure to the form disclosed herein. While a number of example aspects and embodiments have been discussed above, those of skill in the art will recognize certain variations, modifications, alterations, additions and sub-combinations thereof.
Claims (9)
1. A terahertz generation device based on a diamond film, characterized by comprising a diamond film (1) and a pump light source (2);
wherein the diamond film (1) is excited by the pump light emitted by the pump light source (2) and radiates a transmission or reflection type terahertz wave,
wherein the diamond film is a nanocrystalline diamond film having a grain size of at least 50nm,
the pump light emitted by the pump light source (2) is laser with the central wavelength of 600-1000nm, the pulse width of 20-50fs and the repetition frequency of 1-100 KHz.
2. The diamond film-based terahertz generation device according to claim 1, wherein the diamond film (1) is an intrinsic, N-type or P-type doped nanocrystalline diamond film.
3. The diamond film-based terahertz generating device according to claim 1, further comprising a substrate on which the diamond film is laid.
4. The diamond film-based terahertz generation device according to claim 3, wherein the substrate is made of a material that does not radiate and absorb terahertz waves, the material being quartz, sapphire, mica, or high-resistance silicon.
5. The diamond film-based terahertz generation device according to claim 1, wherein the diamond film (1) can exist in a self-supporting manner.
6. The diamond film-based terahertz generation device according to claim 1, wherein the pump light emitted by the pump light source (2) is a femtosecond laser having a center wavelength of 800nm, a pulse width of 35fs, and a repetition frequency of 1 KHz.
7. A terahertz generation method based on a diamond film is characterized by comprising the following steps:
preparing a diamond film;
the pumping light source emits pumping light to irradiate the diamond film to generate transmission or reflection type terahertz waves,
wherein the diamond film is a nanocrystalline diamond film having a grain size of at least 50nm,
the pump light emitted by the pump light source (2) is laser with the central wavelength of 600-1000nm, the pulse width of 20-50fs and the repetition frequency of 1-100 KHz.
8. The diamond film-based terahertz generation method according to claim 7,
the terahertz generation method further includes: the intensity of the terahertz pulse radiated by the diamond film is optimized by changing the incidence angle of the pump light, the energy density of the pump light or the polarization angle of the pump light.
9. The diamond film-based terahertz generation method according to claim 7, further comprising:
an elliptically polarized terahertz wave can be radiated by changing the polarization state of the pump light.
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