CN111082287B - MoSe2Ferromagnetic metal terahertz radiation source, preparation method and terahertz wave excitation method - Google Patents

MoSe2Ferromagnetic metal terahertz radiation source, preparation method and terahertz wave excitation method Download PDF

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CN111082287B
CN111082287B CN201911317239.0A CN201911317239A CN111082287B CN 111082287 B CN111082287 B CN 111082287B CN 201911317239 A CN201911317239 A CN 201911317239A CN 111082287 B CN111082287 B CN 111082287B
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mose
ferromagnetic metal
terahertz
radiation source
terahertz radiation
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周译玄
徐新龙
范泽宇
黄媛媛
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Northwest University
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S1/00—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range
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Abstract

The invention discloses MoSe2Terahertz radiation source of ferromagnetic metal, preparation method and terahertz wave excitation method, wherein the terahertz radiation source comprises a substrateMoSe deposited on a substrate2And deposited on MoSe2A ferromagnetic metal as described above. MoSe according to the invention2The terahertz radiation source of the ferromagnetic metal applies a magnetic field, and then pumping light is incident on the ferromagnetic metal of the terahertz radiation source to generate terahertz waves. The invention uses MoSe2The terahertz radiation source is a heterojunction formed by the terahertz radiation source and ferromagnetic metal, and under the action of an external magnetic field, the intensity of the generated terahertz radiation is obviously improved compared with that of a single material, so that the terahertz radiation source has high radiation efficiency; due to MoSe in comparison with non-ferromagnetic metallic materials2Relatively transparent in the terahertz band, using MoSe2And the material and the ferromagnetic metal form a heterojunction, so that the attenuation of the material to the generated terahertz radiation can be reduced.

Description

MoSe2Ferromagnetic metal terahertz radiation source, preparation method and terahertz wave excitation method
Technical Field
The invention belongs to the technical field of terahertz waveband devices, and particularly relates to MoSe2Ferromagnetic metal terahertz radiation source, preparation and terahertz wave excitation method.
Background
The terahertz radiation is 0.1-10 THz electromagnetic radiation and is between radio waves and light waves in frequency; energetically, between electrons and photons. In the electromagnetic spectrum, infrared and microwave technologies on both sides of the terahertz waveband are very mature, but the terahertz technology is still a blank basically because the terahertz technology is not completely suitable for optical theory processing nor microwave theory research on the frequency band. The terahertz spectrum technology is widely applied to the fields of properties of semiconductor materials and high-temperature superconducting materials, imaging for researching cell level, examination of chemistry and biological molecules, broadband communication, microwave orientation and the like.
For the surface terahertz emission spectroscopy technology, people find out various methods for generating terahertz waves in the process of continuous research. In the terahertz wave generation method, an electronic method (such as an electronic nonlinear transmission line) and an optical method (such as an optical rectification effect, an optical traction effect, a photovoltaic effect and the like which utilize second-order nonlinearity) are used separately to generate terahertz waves. While the related art of using femtosecond laser pulses to excite the surface of a material to generate terahertz electromagnetic radiation was demonstrated in the beginning of the 90 s of the 20 th century, research work on terahertz electromagnetic radiation in this respect has been remarkably developed in a period thereafter. At present, terahertz waves are excited and radiated on the surface of a material by femtosecond laser pulses, and three schemes are generally adopted: (1) radiating terahertz electromagnetic pulses through a nonlinear optical light rectification effect; (2) by the action of an external bias electric field, instantaneous photocurrent which changes very fast and is parallel to the surface of the material is formed on the surface of the material of the photoconductive antenna, so that terahertz electromagnetic radiation is excited; (3) the photon-generated carriers excited in the material by the laser pulses do instantaneous accelerated motion vertical to the surface of the material under the action of a surface built-in electric field, so that terahertz radiation is generated.
In early studies, terahertz radiation was generated by combining terahertz radiation with conventional semiconductor materials, irradiating GaAs, ZnTe, InAs, etc. with femtosecond laser. With the development of new functional materials, the layered transition metal sulfur compound has the potential of being developed into a high-efficiency and ultrathin terahertz emission source due to the excellent characteristics of high electron mobility, high photoelectric conversion rate and the like. As representative of transition metal sulfides, MoSe2Having all the characteristics mentioned above. Previous work by the inventors has found that the use of a single layer of MoSe is useful2The film can generate terahertz radiation, but due to the limitation of a single-layer structure, the carrier mobility is low, the generated terahertz radiation is weak in strength, and the stability is poor. While using layered bulk MoSe2The material with a certain thickness can absorb terahertz radiation strongly, and the carrier shielding in the material can saturate the terahertz signal intensity. This set of problems limits the MoSe2The terahertz radiation source is applied to being used as a terahertz radiation source and applied to future integrated terahertz systems.
Disclosure of Invention
Aiming at the technical problem, the invention provides MoSe2Ferromagnetic metal terahertz radiation source, preparation and terahertz radiation sourceHertz wave excitation method for overcoming the defects of the conventional MoSe2The film terahertz radiation efficiency is generally low, and signals are unstable.
In order to achieve the purpose, the invention adopts the following technical scheme:
MoSe2Ferromagnetic metal terahertz radiation source comprising a substrate, MoSe deposited on the substrate2And deposited on MoSe2A ferromagnetic metal as described above.
Specifically, MoSe2The thickness of the layer is 0.72-8 nm; the thickness of the ferromagnetic metal layer is 3-20 nm.
In particular, the MoSe2MoSe doped p-type or n-type2。
Specifically, the ferromagnetic metal is cobalt metal or cobalt-iron-boron alloy.
Specifically, the ferromagnetic metal is deposited on the MoSe by a vacuum evaporation or magnetron sputtering method2Of (2) is provided.
In particular, the MoSe2Deposited on the substrate by chemical vapor deposition, liquid phase lift-off, epitaxial growth or redox processes.
Specifically, the substrate is quartz, sapphire or mica.
The invention also discloses MoSe2A preparation method of a ferromagnetic metal terahertz radiation source comprises the following steps: firstly, cleaning the surface of a substrate, and then depositing MoSe on the substrate by using a chemical vapor phase method, a liquid phase stripping method, an epitaxial growth method or a redox method2Layer, finally on MoSe by vacuum evaporation or magnetron sputtering2Depositing a ferromagnetic metal layer on the surface of the layer to obtain MoSe2Ferromagnetic metal terahertz radiation source.
The invention also discloses a terahertz wave excitation method, which comprises the following steps: MoSe according to the invention2The terahertz radiation source of the ferromagnetic metal applies a magnetic field, and then pumping light is incident on the ferromagnetic metal of the terahertz radiation source to generate terahertz waves.
Specifically, the pump light adopts femtosecond laser with the central wavelength of 400-800 nm, the pulse width of 10-100 fs and the repetition frequency of 1-100 kHz.
Compared with the prior art, the invention has the beneficial effects that:
(1) the invention uses MoSe2The terahertz radiation source is a heterojunction formed by the terahertz radiation source and ferromagnetic metal, and under the action of an external magnetic field, the intensity of the generated terahertz radiation is obviously improved compared with that of a single material, so that the terahertz radiation source has high radiation efficiency; due to MoSe in comparison with non-ferromagnetic metallic materials2Relatively transparent in the terahertz band, using MoSe2The film and the ferromagnetic metal form a heterojunction, and the attenuation of the material to the generated terahertz radiation can be reduced.
(2) The invention uses MoSe2The terahertz radiation source and ferromagnetic metal form a heterojunction to be used as a terahertz radiation source, so that the terahertz radiation source can be integrated in a traditional photoelectric functional device and can also be applied to a future integrated terahertz system. The terahertz source device is low in cost, easy to prepare and high in repeatability.
Drawings
FIG. 1 is a schematic diagram of the principle of terahertz wave generation by transmission of a terahertz radiation source of the present invention.
FIG. 2 is 2.14mJ/cm2At a pump light energy density of2The terahertz radiation time-domain spectrum generated by the cobalt heterojunction and the corresponding frequency-domain spectrum.
FIG. 3 shows MoSe under different pumping flux excitations2The terahertz time-domain waveform generated by the cobalt heterojunction under the action of an external magnetic field and the dependence of the terahertz radiation intensity along with the energy density of the pump light.
FIG. 4 shows 2.14mJ/cm2At a pump light energy density of2The dependence graph of the amplitude of the terahertz wave generated by the cobalt heterojunction under the action of an external magnetic field along with the polarization angle of incident pump light is shown.
FIG. 5 shows 2.14mJ/cm2At a pump light energy density of2The dependence graph of the amplitude of the terahertz wave generated by the cobalt heterojunction under the action of the external magnetic field and the azimuth angle of the external magnetic field is shown.
FIG. 6 shows 2.14mJ/cm2Pump light energy density ofLower, MoSe2Thin film, cobalt metal thin film and MoSe2The terahertz radiation time-domain spectrum and the corresponding frequency-domain spectrum are generated by the cobalt metal heterojunction under the action of an external magnetic field.
The reference numerals in the drawings mean: 1-ferromagnetic metals, 2-MoSe23-substrate, 4-pump light source.
The invention is described in detail below with reference to the drawings and the detailed description.
Detailed Description
As shown in FIG. 1, the invention provides a MoSe2A ferromagnetic metal terahertz radiation source comprises a ferromagnetic metal layer 1 and MoSe2 A layer 2 and a substrate 3, wherein MoSe is deposited on the surface of the substrate 3 with a certain thickness2Formation of MoSe2Layer 2, then in MoSe2The ferromagnetic metal layer 1 is formed by depositing a certain thickness of ferromagnetic metal on the surface of the layer 2. MoSe of the invention2The thickness of the layer is 0.72-8 nm, and the thickness of the ferromagnetic metal is 3-20 nm.
MoSe used in the invention2MoSe doped p-type or n-type2(ii) a The ferromagnetic metal is cobalt metal or cobalt-iron-boron alloy.
MoSe of the invention2Deposited on the substrate by chemical vapor deposition, liquid phase lift-off, epitaxial growth or redox methods. The ferromagnetic metal is deposited on the MoSe by a vacuum evaporation or magnetron sputtering method2The surface of the layer.
The substrate material of the invention is a material which does not absorb terahertz waves, and quartz, sapphire or mica are preferred in the invention.
In the preparation of the MoSe of the invention2When the terahertz radiation source is used as a ferromagnetic metal, firstly, a substrate is cleaned, and then MoSe is deposited on the substrate by using a chemical vapor method, a liquid phase stripping method, an epitaxial growth method or a redox method2Layer, finally on MoSe by vacuum evaporation or magnetron sputtering2Depositing a ferromagnetic metal layer on the surface of the substrate to obtain the MoSe2Ferromagnetic metal terahertz radiation source.
The MoSe of the invention2The ferromagnetic metal heterojunction is used as a terahertz radiation source to generate terahertz wavesThe process is as follows:
first, the MoSe-based method of the invention2The terahertz radiation source of the ferromagnetic metal heterojunction applies a magnetic field, and then pump light is incident on the ferromagnetic metal of the terahertz radiation source, the terahertz radiation source is preferably normally incident on the ferromagnetic metal at an inclination angle of 0 degrees, and terahertz waves are radiated due to the inverse spin Hall effect at the heterojunction interface. The pump light 4 of the invention adopts femtosecond laser with the central wavelength of 400-800 nm, the pulse width of 10-100 fs and the repetition frequency of 1-100 kHz.
The terahertz intensity can be adjusted by changing parameters such as the incident angle of pump light, the pump flux and the like.
The following embodiments of the present invention are provided, and it should be noted that the present invention is not limited to the following embodiments, and all equivalent changes based on the technical solutions of the present invention are within the protection scope of the present invention.
Example 1
Cleaning the substrate, and then depositing MoSe on the substrate 1 by any one of chemical vapor phase method, liquid phase lift-off method, epitaxial growth method or oxidation reduction method2Layer 2, vacuum evaporation or magnetron sputtering on MoSe2Depositing ferromagnetic metal on the surface. The obtained MoSe2A ferromagnetic metal terahertz radiation source comprises a ferromagnetic metal layer 1 and MoSe2 Layer 2 and substrate 3. Wherein, MoSe2The thickness of the layer is 1.2nm, the ferromagnetic metal is cobalt metal, and the thickness of the ferromagnetic metal layer is 3 nm; the substrate is a quartz substrate.
In this embodiment, a femtosecond laser with a frequency of 800nm, a pulse width of 60fs and a repetition frequency of 1kHz is used as a pump light source, and the energy density of the pump light is 2.14mJ/cm2. The femtosecond laser pulse excites the surface of the heterojunction with a 0-degree normal incidence pump to generate terahertz waves.
The terahertz waves are detected on a transmission surface of 0 degrees by taking zinc telluride as a detection crystal, and the result is shown in fig. 2 and is a terahertz time-domain spectrum and a corresponding frequency-domain spectrum thereof respectively.
Example 2
This example differs from example 1 in that: the ferromagnetic metal is cobalt iron boron alloy.
The process of exciting the surface of the heterojunction to generate terahertz radiation in the present embodiment is the same as that in embodiment 1, and the result is similar to that in embodiment 1, but the intensity of the terahertz wave is slightly changed.
Example 3
This example differs from example 1 in that: MoSe2The thickness of the film is 0.72nm, and the thickness of the ferromagnetic metal layer is 3 nm.
The process of exciting the surface of the heterojunction to generate terahertz radiation in the present embodiment is the same as that in embodiment 1, and the result is similar to that in embodiment 1, but the intensity of the terahertz wave is slightly changed.
Example 4
This example differs from example 1 in that: MoSe2The thickness of the film is 8nm, and the thickness of the ferromagnetic metal layer is 20 nm.
The process of exciting the surface of the heterojunction to generate terahertz radiation in the present embodiment is the same as that in embodiment 1, and the result is similar to that in embodiment 1, but the intensity of the terahertz wave is slightly changed.
Example 5
This example differs from example 1 in that: the MoSe is obtained by changing the energy density of the pump light2The terahertz radiation intensity of the ferromagnetic metal heterojunction varies with the pump light energy density, and the result is shown in fig. 3:
FIG. 3 shows MoSe of pump light at 0 degree incidence2The terahertz radiation intensity of the ferromagnetic metal heterojunction is related to the change of the energy density of the pump light. It can be seen that the terahertz intensity initially increases linearly with the pump light flux, and as the pump light flux continues to increase, the change in terahertz intensity deviates from linearity and gradually approaches saturation.
Example 6
This example differs from example 1 in that: the polarization angle of the pump light is changed to obtain MoSe2The terahertz radiation waveform of the ferromagnetic metal heterojunction is related to the change of the polarization angle of the incident pump light, and the result is shown in fig. 4:
FIG. 4 shows MoSe with pump light incident at 0 °2Ferromagnetic metalThe terahertz radiation intensity of the heterojunction is related to the change of the polarization angle of the incident pump light. It can be seen that the terahertz intensity does not change with the change of the polarization angle of the pump light, and shows an isotropic response.
Example 7
This example differs from example 1 in that: changing the azimuth angle of the external magnetic field, and rotating the direction of the external magnetic field for a circle around the sample to obtain MoSe2The terahertz radiation waveform of the ferromagnetic metal heterojunction changes along with the direction of the magnetic field, and the result is shown in fig. 5:
FIG. 5 shows MoSe with pump light incident at 0 °2The terahertz radiation intensity of the ferromagnetic metal heterojunction is related to the change of the magnetic field direction. It can be seen that the terahertz intensity shows along with the change of the magnetic field direction
Figure BDA0002326167200000081
The terahertz waveform is also reversed when the magnetic field direction is reversed.
Comparative example 1
This comparative example differs from example 1 in that: using MoSe2Film instead of MoSe2The/ferromagnetic metal heterojunction is used as a terahertz radiation source.
The comparative example excites the surface of the heterojunction to generate terahertz radiation in the same way as example 1, and the result is shown in fig. 6.
Comparative example 2
This comparative example differs from example 1 in that: replacement of MoSe with cobalt metal thin films2The/ferromagnetic metal heterojunction is used as a terahertz radiation source.
The comparative example excites the surface of the heterojunction to generate terahertz radiation in the same way as example 1, and the result is shown in fig. 6.
FIG. 6 shows MoSe heterojunction of molybdenum selenide/ferromagnetic metal with pump light incident at 0 deg2The terahertz time-domain spectrum generated by the film and the cobalt film and the corresponding frequency-domain spectrum thereof. It can be seen that, relative to MoSe2Thin films and thin films of cobalt, MoSe2The terahertz intensity of the ferromagnetic metal heterojunction is obviously enhanced, and the frequency domain spectrum bandwidth is also obviously widened.

Claims (8)

1. MoSe2The terahertz radiation source is characterized by comprising a substrate and MoSe deposited on the substrate2And deposited on MoSe2A ferromagnetic metal as above;
MoSe2the thickness of the layer is 0.72-8 nm; the thickness of the ferromagnetic metal layer is 3-20 nm;
the ferromagnetic metal is cobalt metal or cobalt-iron-boron alloy.
2. The MoSe of claim 12Ferromagnetic metal terahertz radiation source, characterized in that the MoSe2MoSe doped p-type or n-type2。
3. The MoSe of claim 12The terahertz radiation source is characterized in that the ferromagnetic metal is deposited on the MoSe by a vacuum evaporation or magnetron sputtering method2Of (2) is provided.
4. The MoSe of claim 12Ferromagnetic metal terahertz radiation source, characterized in that the MoSe2Deposited on the substrate by chemical vapor deposition, liquid phase lift-off, epitaxial growth or redox processes.
5. The MoSe of claim 12The ferromagnetic metal terahertz radiation source is characterized in that the substrate is quartz, sapphire or mica.
6. MoSe of any of claims 1 to 52The preparation method of the ferromagnetic metal terahertz radiation source is characterized by comprising the following steps: firstly, cleaning the surface of a substrate, and then depositing MoSe on the substrate by using a chemical vapor phase method, a liquid phase stripping method, an epitaxial growth method or a redox method2Layer, finally on MoSe by vacuum evaporation or magnetron sputtering2Depositing a ferromagnetic metal layer on the surface of the layer to obtain MoSe2Ferromagnetic metal terahertzA radiation source.
7. A terahertz wave excitation method, comprising: MoSe according to any of claims 1 to 52The terahertz radiation source of the ferromagnetic metal applies a magnetic field, and then pumping light is incident on the ferromagnetic metal of the terahertz radiation source to generate terahertz waves.
8. The terahertz wave excitation method according to claim 7, wherein the pump light is a femtosecond laser having a center wavelength of 400 to 800nm, a pulse width of 10 to 100fs, and a repetition frequency of 1 to 100 kHz.
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Publication number Priority date Publication date Assignee Title
CN105914564A (en) * 2016-06-14 2016-08-31 西南交通大学 High-strength broadband terahertz wave generator
CN108919587A (en) * 2018-06-12 2018-11-30 西北大学 One kind being based on transition metal chalcogenide terahertz sources source and exciting method
CN108963724A (en) * 2018-08-01 2018-12-07 中国工程物理研究院电子工程研究所 Dielectric-metal photonic crystal, preparation method and terahertz pulse generator
CN110416862A (en) * 2019-06-18 2019-11-05 西北大学 A kind of terahertz emission source based on Van der Waals hetero-junctions

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105914564A (en) * 2016-06-14 2016-08-31 西南交通大学 High-strength broadband terahertz wave generator
CN108919587A (en) * 2018-06-12 2018-11-30 西北大学 One kind being based on transition metal chalcogenide terahertz sources source and exciting method
CN108963724A (en) * 2018-08-01 2018-12-07 中国工程物理研究院电子工程研究所 Dielectric-metal photonic crystal, preparation method and terahertz pulse generator
CN110416862A (en) * 2019-06-18 2019-11-05 西北大学 A kind of terahertz emission source based on Van der Waals hetero-junctions

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