CN113793884A - Preparation method of Mini-LED display module - Google Patents
Preparation method of Mini-LED display module Download PDFInfo
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- CN113793884A CN113793884A CN202111084506.1A CN202111084506A CN113793884A CN 113793884 A CN113793884 A CN 113793884A CN 202111084506 A CN202111084506 A CN 202111084506A CN 113793884 A CN113793884 A CN 113793884A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 239000007771 core particle Substances 0.000 claims abstract description 94
- 239000000758 substrate Substances 0.000 claims abstract description 79
- 238000012546 transfer Methods 0.000 claims abstract description 54
- 238000003466 welding Methods 0.000 claims abstract description 41
- 239000000463 material Substances 0.000 claims abstract description 38
- 238000004519 manufacturing process Methods 0.000 claims abstract description 22
- 238000002955 isolation Methods 0.000 claims abstract description 20
- 238000011049 filling Methods 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 14
- 239000002202 Polyethylene glycol Substances 0.000 claims description 6
- 229920001223 polyethylene glycol Polymers 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 5
- 239000012790 adhesive layer Substances 0.000 claims description 4
- 229920001721 polyimide Polymers 0.000 claims description 4
- 239000002243 precursor Substances 0.000 claims description 4
- 239000004593 Epoxy Substances 0.000 claims description 2
- 239000004642 Polyimide Substances 0.000 claims description 2
- 239000002904 solvent Substances 0.000 claims description 2
- 238000004090 dissolution Methods 0.000 claims 1
- 238000004806 packaging method and process Methods 0.000 abstract description 18
- 238000005516 engineering process Methods 0.000 abstract description 10
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 238000012545 processing Methods 0.000 abstract description 4
- 239000004205 dimethyl polysiloxane Substances 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 239000010410 layer Substances 0.000 description 6
- 239000012528 membrane Substances 0.000 description 6
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 6
- 239000002184 metal Substances 0.000 description 5
- -1 polydimethylsiloxane Polymers 0.000 description 5
- 230000007547 defect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a preparation method of a Mini-LED display module, which comprises the following steps: transferring the Mini-LED core particle array to a second transfer substrate by using a first transfer substrate, fixing the Mini-LED core particle array on the surface of the second transfer substrate by using a sacrificial material, and enabling the first surface of each core particle with an electrode to be far away from the second transfer substrate; filling an isolation material at least between the core particles; exposing the electrodes of the core particles, and manufacturing a first conductive circuit electrically connected with the electrodes of the core particles so as to connect the core particles in series and/or in parallel; manufacturing a first welding point matched with the first conductive circuit; and bonding the Mini-LED core particle array fixed on the second transfer substrate with a target substrate by using the first welding points, and removing the sacrificial material to remove the second transfer substrate. According to the invention, the subsequent large-batch Mini-LED chip packaging is transferred to the previous semiconductor processing technology, so that the packaging cost is reduced and the packaging efficiency is improved.
Description
Technical Field
The invention belongs to the technical field of semiconductor illumination, and particularly relates to a preparation method of a Mini-LED display module.
Background
The Mini-LED technology based on semiconductor technology is a new type of high brightness and high resolution display technology. The Mini-LED has the size of 50-200 mu m, can be used as an array pixel display and a backlight source of an LCD, and has wide market prospect in the fields of televisions, display screens, notebooks and the like. Mini-LEDs have many advantages compared to LCD and OLED displays, such as: high brightness, low power, long service life and high thermal stability. However, Mini-LEDs are much smaller and have a relatively higher density than conventional LED devices, which brings many technical and physical challenges, such as mass transfer technology, full color display, etc.
At present, the Mini-LED display technology adopts schemes such as COB (chip on board) small-distance packaging and all-in-one integrated packaging, the cost of large-amount core particle pasting and packaging is high, and the industrialization cost of Mini-LED display needs to be reduced.
Disclosure of Invention
The invention mainly aims to provide a preparation method of a Mini-LED display module to overcome the defects of the prior art.
In order to achieve the purpose, the technical scheme adopted by the invention comprises the following steps:
the embodiment of the invention provides a preparation method of a Mini-LED display module, which comprises the following steps:
transferring the Mini-LED core particle array to a second transfer substrate by using a first transfer substrate, fixing the Mini-LED core particle array on the surface of the second transfer substrate by using a sacrificial material, and enabling the first surface, provided with an electrode, of each Mini-LED core particle to be far away from the second transfer substrate;
filling an isolation material at least between the core particles of the Mini-LED core particle array;
exposing the electrodes of the core particles, and manufacturing a first conductive circuit electrically connected with the electrodes of the core particles so as to connect the core particles in series and/or in parallel;
manufacturing a first welding point matched with the first conductive circuit;
and bonding the Mini-LED core particle array fixed on the second transfer substrate with a target substrate by using the first welding points, and removing the sacrificial material to remove the second transfer substrate.
The embodiment of the invention also provides the Mini-LED display module prepared by the method.
The embodiment of the invention also provides application of the Mini-LED display module, such as application in preparing lighting equipment and display equipment, but not limited to the application.
Compared with the prior art, the invention has the beneficial effects that:
according to the invention, the subsequent large-batch packaging of the Mini-LED chips is transferred to the previous semiconductor processing technology, so that the packaging technology difficulty is degraded, the packaging cost is reduced, the packaging efficiency is improved, the overall yield and reliability of the product are improved, and the commercialization and industrialization of the Mini-LED large-size display screen are facilitated.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments described in the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a flowchart of a method for manufacturing a Mini-LED display module according to an embodiment of the present invention.
Description of reference numerals: 1-Mini-LED core particles, 2-blue films, 3-polydimethylsiloxane films, 4-glass substrates, 5-polyethylene glycol, 6-first insulating isolation layers, 7-second insulating isolation layers, 8-p-type welding bumps, 9-n-type welding bumps and 10-packaging substrates.
Detailed Description
In view of the defects of the prior art, the inventor of the present invention has long studied and largely practiced to propose the technical solution of the present invention, which will be clearly and completely described below, and it is obvious that the described embodiments are a part of the embodiments of the present invention, but not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The embodiment of the invention provides a preparation method of a Mini-LED display module, which comprises the following steps:
transferring the Mini-LED core particle array to a second transfer substrate by using a first transfer substrate, fixing the Mini-LED core particle array on the surface of the second transfer substrate by using a sacrificial material, and enabling the first surface, provided with an electrode, of each Mini-LED core particle to be far away from the second transfer substrate;
filling an isolation material at least between the core particles of the Mini-LED core particle array;
exposing the electrodes of the core particles, and manufacturing a first conductive circuit electrically connected with the electrodes of the core particles so as to connect the core particles in series and/or in parallel;
manufacturing a first welding point matched with the first conductive circuit;
and bonding the Mini-LED core particle array fixed on the second transfer substrate with a target substrate by using the first welding points, and removing the sacrificial material to remove the second transfer substrate.
Further, the first transfer substrate comprises an ultraviolet film or a flexible film with an array of grooves matching the array of Mini-LED core particles.
Wherein the flexible membrane may be a polydimethylsiloxane membrane.
Specifically, the Mini-LED core particle array can be grasped by a polydimethylsiloxane film with a groove array or attached to an ultraviolet film, and the Mini-LED core particle array is transferred to a second transfer substrate by utilizing the characteristic that the viscosity of the ultraviolet film is reduced or eliminated under the action of ultraviolet light or heat, and the position of each core particle can be kept not to be deviated.
Further, the second transfer base includes a hard substrate, which may be a glass substrate, for example.
Further, before transferring the Mini-LED core particle array with a first transfer substrate having a groove array, the Mini-LED core particle array is disposed on a temporary substrate, and a first surface of each core particle having an electrode is away from the temporary substrate, and then the Mini-LED core particle array distributed on the temporary substrate is transferred onto the first transfer substrate, and each core particle is at least partially embedded in a corresponding groove on the first transfer substrate, and a second surface of each core particle is disposed away from the first transfer substrate, the second surface being opposite to the first surface.
Preferably, the temporary substrate comprises a blue film.
Further, the Mini-LED core particle array is transferred onto any one of the first transfer substrate and the second transfer substrate without a shift in the position of each core particle.
Further, the preparation method also comprises the following steps:
an adhesive layer formed by a precursor of a sacrificial material is arranged on the surface of a second transfer substrate in advance, the Mini-LED core particle array is transferred from the first transfer substrate to the second transfer substrate, the second surface of each core particle is attached to the adhesive layer, and then the precursor of the sacrificial material is solidified to form the sacrificial material, so that the Mini-LED core particle array is fixed on the surface of the second transfer substrate.
Further, covering a separation material on the surface of the Mini-LED core particle array transferred to the second transfer substrate, and filling at least part of the separation material into gaps among the core particles;
at least removing part of isolation materials on the surface of the Mini-LED core particle array to expose the p electrode and the n electrode of each core particle, and then manufacturing a first conductive circuit to arrange the core particles in series and/or in parallel, wherein the first conductive circuit comprises a p electrode interconnection conductive circuit and an n electrode interconnection conductive circuit.
Further, after the first conductive circuit is manufactured, an isolation material is coated on the surface of the Mini-LED core particle array again, then part of the isolation material on the surface of the Mini-LED core particle array is removed again to expose the position for manufacturing the first welding point, and then the first welding point is manufactured.
Furthermore, the first welding point comprises a plurality of n-type welding bumps and a plurality of p-type welding bumps, and the n-type welding bumps and the p-type welding bumps are distributed in a staggered and scattered mode.
Further, the isolation material on the surface of the Mini-LED core particle array is removed by adopting a photoetching process.
Furthermore, a second conductive circuit and a second welding point are formed on the target substrate in advance, and the second conductive circuit and the second welding point are respectively matched with the first conductive circuit and the first welding point.
Further, the sacrificial material is dissolved and removed by a solvent to remove the second transfer substrate.
Further, the sacrificial material comprises polyethylene glycol.
Further, the isolation material includes polyimide or epoxy.
The technical solutions of the present invention will be further described in detail with reference to the accompanying drawings, and the present embodiment is implemented on the premise of the technical solutions of the present invention, and a detailed implementation manner and a specific operation process are given, but the scope of the present invention is not limited to the following embodiments.
Example 1
As shown in fig. 1, a method for manufacturing a Mini-LED display module according to this embodiment includes:
step S1: uniformly attaching a Mini-LED core particle array consisting of a plurality of Mini-LED core particles 1 to a blue film 2, enabling one surface with an electrode to be far away from the blue film 2, grabbing the Mini-LED core particle array from the blue film 2 by using a polydimethylsiloxane film 3 with a groove array, or attaching one surface with an electrode of the Mini-LED core particle array to an ultraviolet film (not shown in the figure), transferring the Mini-LED core particles 1 by utilizing the characteristic that the viscosity of the Mini-LED core particle array can be reduced or disappeared under the action of ultraviolet light or heat, and keeping the positions of the core particles from deviating;
step S2: coating a layer of polyethylene glycol 5 on a glass substrate 4, transferring a Mini-LED core particle array captured by a polydimethylsiloxane membrane 3 or a Mini-LED core particle array adhered to a UV membrane onto the glass substrate 4, curing the polyethylene glycol 5, and then tearing off the polydimethylsiloxane membrane 3 or an ultraviolet membrane;
step S3: filling gaps among the Mini-LED core particles 1 with materials such as polyimide or epoxy resin, and forming a first insulating isolation layer 6 on the surface of the Mini-LED core particle array, wherein in order to prevent bubbles and gaps, the ideal isolation effect can be achieved by filling the gaps twice or more in a vacuum state;
step S4: photoetching the first insulating isolation layer 6 to expose the positions of the n electrode and the p electrode of the Mini-LED core particle, and evaporating metal to form a p electrode metal interconnection line and an n electrode metal interconnection line so as to realize row and column interconnection of the Mini-LED core particle array;
step S5: forming a second insulating isolation layer 7 on the Mini-LED core particle array by using polyimide or epoxy resin and other materials, photoetching to expose the positions of a p-type welding salient point 8 and an n-type welding salient point 9 which are preset, and evaporating metal to manufacture the welding salient points, wherein the p-type welding salient points and the n-type welding salient points are arranged in a staggered and dispersed mode on the positions to improve the space utilization rate, so that the welding salient points with larger sizes can be designed, and alignment of the welding salient points and welding points on a packaging substrate 10 is facilitated;
step S6: performing circuit design matched with the chip structure design on the packaging substrate 10, and manufacturing required metal connecting wires and welding spots on the packaging substrate 10 by photoetching and etching technologies;
step S7: carrying out low-temperature welding on the glass substrate 4 fixed with the Mini-LED core particle array and the packaging substrate 10 according to the corresponding positions of welding spots to obtain a line and row scanning driving Mini-LED display module electrically connected with the packaging substrate 10;
step S8: and adding deionized water solution to remove the polyethylene glycol 5 so as to remove the glass substrate 4, and finishing the preparation of the Mini-LED display module.
The Mini-LED display module processing technology adopted in this embodiment transfers the next large batch of Mini-LED chip packages to the previous semiconductor processing technology. The method of modularizing the chip and packaging the chip in the previous process reduces the packaging cost and improves the packaging efficiency.
In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "connected" and "connected" are to be interpreted broadly, e.g., as being fixed or detachable or integrally connected; the connection can be mechanical connection or electrical connection; the two elements may be directly connected or indirectly connected through an intermediate medium, or may be communicated with each other inside the two elements, or may be wirelessly connected or wired connected. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
It should be understood that the technical solution of the present invention is not limited to the above-mentioned specific embodiments, and all technical modifications made according to the technical solution of the present invention fall within the protection scope of the present invention without departing from the spirit of the present invention and the protection scope of the claims.
Claims (12)
1. A preparation method of a Mini-LED display module is characterized by comprising the following steps:
transferring the Mini-LED core particle array to a second transfer substrate by using a first transfer substrate, fixing the Mini-LED core particle array on the surface of the second transfer substrate by using a sacrificial material, and enabling the first surface, provided with an electrode, of each Mini-LED core particle to be far away from the second transfer substrate;
filling an isolation material at least between the core particles of the Mini-LED core particle array;
exposing the electrodes of the core particles, and manufacturing a first conductive circuit electrically connected with the electrodes of the core particles so as to connect the core particles in series and/or in parallel;
manufacturing a first welding point matched with the first conductive circuit;
and bonding the Mini-LED core particle array fixed on the second transfer substrate with a target substrate by using the first welding points, and removing the sacrificial material to remove the second transfer substrate.
2. The method of claim 1, wherein the first transfer substrate comprises an ultraviolet film or a flexible film with an array of grooves matching a Mini-LED core array; and/or the second transfer substrate comprises a rigid substrate.
3. The production method according to claim 1 or 2, characterized by further comprising:
before transferring the Mini-LED core particle array by using a first transfer substrate with a groove array, firstly arranging the Mini-LED core particle array on a temporary substrate, enabling a first surface of each core particle with an electrode to be far away from the temporary substrate, then transferring the Mini-LED core particle array distributed on the temporary substrate onto the first transfer substrate, enabling each core particle to be at least partially embedded into a corresponding groove on the first transfer substrate, enabling a second surface of each core particle to be far away from the first transfer substrate, and enabling the second surface to be opposite to the first surface;
preferably, the temporary substrate comprises a blue film.
4. The production method according to claim 3, characterized in that: the Mini-LED array of core particles is transferred onto either one of the first and second transfer substrates with no offset in the position of each core particle.
5. The method of claim 1, further comprising:
an adhesive layer formed by a precursor of a sacrificial material is arranged on the surface of a second transfer substrate in advance, the Mini-LED core particle array is transferred from the first transfer substrate to the second transfer substrate, the second surface of each core particle is attached to the adhesive layer, and then the precursor of the sacrificial material is solidified to form the sacrificial material, so that the Mini-LED core particle array is fixed on the surface of the second transfer substrate.
6. The method of claim 5, further comprising:
covering the surface of the Mini-LED core particle array transferred to the second transfer substrate with an isolation material, and filling at least part of the isolation material into gaps among the core particles;
at least removing part of isolation materials on the surface of the Mini-LED core particle array to expose the p electrode and the n electrode of each core particle, and then manufacturing a first conductive circuit to arrange the core particles in series and/or in parallel, wherein the first conductive circuit comprises a p electrode interconnection conductive circuit and an n electrode interconnection conductive circuit.
7. The method of claim 6, further comprising: after the first conducting circuit is manufactured, covering an isolating material on the surface of the Mini-LED core particle array again, removing part of the isolating material on the surface of the Mini-LED core particle array again to expose the position for manufacturing the first welding point, and manufacturing the first welding point.
8. The method of claim 7, wherein: the first welding point comprises a plurality of n-type welding salient points and a plurality of p-type welding salient points, and the n-type welding salient points and the p-type welding salient points are distributed in a staggered and dispersed mode.
9. The production method according to any one of claims 6 to 8, characterized by comprising: and removing the isolation material on the surface of the Mini-LED core particle array by adopting a photoetching process.
10. The method of claim 1, wherein: and a second conductive circuit and a second welding point are formed on the target substrate in advance, and the second conductive circuit and the second welding point are respectively matched with the first conductive circuit and the first welding point.
11. The production method according to claim 1, characterized by comprising: removing the sacrificial material using solvent dissolution to remove the second transfer substrate.
12. The production method according to claim 1 or 11, characterized in that: the sacrificial material comprises polyethylene glycol; and/or the isolation material comprises polyimide or epoxy.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111084506.1A CN113793884A (en) | 2021-09-15 | 2021-09-15 | Preparation method of Mini-LED display module |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111084506.1A CN113793884A (en) | 2021-09-15 | 2021-09-15 | Preparation method of Mini-LED display module |
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| CN113793884A true CN113793884A (en) | 2021-12-14 |
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| CN202111084506.1A Pending CN113793884A (en) | 2021-09-15 | 2021-09-15 | Preparation method of Mini-LED display module |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116936554A (en) * | 2023-07-19 | 2023-10-24 | 深圳市鸿展光电有限公司 | Method for preparing Mini LED array by using mechanical transfer technology |
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2021
- 2021-09-15 CN CN202111084506.1A patent/CN113793884A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116936554A (en) * | 2023-07-19 | 2023-10-24 | 深圳市鸿展光电有限公司 | Method for preparing Mini LED array by using mechanical transfer technology |
| CN116936554B (en) * | 2023-07-19 | 2024-04-16 | 深圳市鸿展光电有限公司 | Method for preparing Mini LED array by using mechanical transfer technology |
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