CN113793718A - Thin film electrode and preparation method and application thereof - Google Patents
Thin film electrode and preparation method and application thereof Download PDFInfo
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- CN113793718A CN113793718A CN202110968887.3A CN202110968887A CN113793718A CN 113793718 A CN113793718 A CN 113793718A CN 202110968887 A CN202110968887 A CN 202110968887A CN 113793718 A CN113793718 A CN 113793718A
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
- H01B13/0026—Apparatus for manufacturing conducting or semi-conducting layers, e.g. deposition of metal
Abstract
The invention provides a film electrode and a preparation method and application thereof, wherein the film electrode comprises a substrate layer and an electrode layer, and nano metal wires or ITO (indium tin oxide) are distributed in the electrode layer, wherein the nano metal wires are mutually connected to form a whole in the electrode layer corresponding to a conductive area; cracks exist among the nano metal wires in the electrode layer corresponding to the insulation region. According to the preparation method of the thin film electrode, the specific line electrode can be manufactured only by coating twice, and compared with the laser etching or yellow light etching mode in the prior art, the preparation method of the thin film electrode is simpler and more convenient in process, higher in efficiency, lower in cost and better in stability; the conductive area and the non-conductive area in the film electrode are flat in appearance and have no obvious protrusion or recess, and the film electrode is used as an electrode for a touch screen and a display screen, has good shadow eliminating effect and good ageing resistance, and can obviously improve the display effect of the touch screen and the display screen.
Description
Technical Field
The invention relates to the technical field of transparent film electrodes, in particular to a film electrode and a preparation method and application thereof.
Background
The conductive film is a conductive film, such as a nano metal wire conductive film and an ITO film, and is widely used in the fields of displays, touch screens, and the like.
However, the conductive film is made of a nano metal wire or an ITO (Indium tin oxide) material, and the conductive film is made by laser etching or yellow etching, but both etching methods have disadvantages: the laser etching mode requires high cost of laser equipment, low production efficiency and low productivity; the etching solution used in the yellow light etching mode has certain harm to human bodies after long-term use, the environmental pollution is serious, the process is complex, and the yield of final products is low. In addition, the electrode prepared by the etching method has poor shadow eliminating effect, because the conductive substance in the etched area is etched away, the area is not conductive, and the nano metal wire or ITO in the non-etched area is reserved to be a conductive area, which causes the content of the nano conductive substance in the two areas to have great difference, directly causes the difference of light transmittance and haze, causes the poor shadow eliminating effect of the conductive electrode prepared by the etching method, and has poor display effect of a display or a touch screen.
In view of the above, a new technical solution is needed to solve the above technical problems.
Disclosure of Invention
The invention aims to solve the technical problems that in the prior art, due to the fact that the etching technology is adopted to manufacture the thin film electrode, the substance content difference between a conductive area and a non-conductive area is large, and further the product shadow eliminating effect is poor, the manufacturing process is complex, the cost is high, and the harm is large.
In order to achieve the purpose, the invention adopts the following technical means:
a first aspect of the present invention provides a thin film electrode comprising a substrate layer;
an electrode layer is arranged on the surface of the substrate layer, and nano metal wires or ITO are distributed in the electrode layer; the electrode layer is divided into a conductive area and an insulating area, and the conductive area is distributed according to a preset circuit;
in the electrode layer corresponding to the conductive area, the nano metal wires are connected with each other to form a whole; cracks exist among the nano metal wires in the electrode layer corresponding to the insulation area, so that the area is not conductive.
As a further improvement, the substrate layer comprises a flexible substrate layer or a rigid substrate layer;
the flexible base material layer is made of PET, PEN or PI;
the rigid substrate layer is made of glass, PMMA or quartz plate;
the nano metal wire comprises a nano silver wire, a nano copper wire or a nano gold wire.
As a further improvement, the electrode structure further comprises a protective layer, and the protective layer is paved on the surface of the electrode layer or arranged in the surface of the electrode layer.
As a further improvement, the material of the protective layer comprises at least one of thermosetting resin and light-cured resin;
the thermosetting resin comprises one or more of phenolic resin, epoxy resin, unsaturated polyester, amino resin, silicon ether resin, furan resin, polybutadiene resin and organic silicon resin;
the light-cured resin comprises one or more of epoxy acrylic resin, polyurethane acrylic resin, polyester acrylic resin, polyether acrylic resin, pure acrylic resin and vinyl resin.
The second aspect of the present invention provides a method for preparing a thin film electrode, comprising the following steps:
s1, preparing a conductive layer material: the conducting layer material comprises a nano metal wire, a solvent and a dispersing agent;
s2, preparing a sol layer material: the sol layer material comprises one or more of zirconia sol, titanium dioxide sol, zinc oxide sol and silicon dioxide sol;
s3, coating the conducting layer material on the surface of the base material layer, and drying to form a conducting layer; coating the sol layer material on the surface of the conductive layer according to a preset pattern to form a sol layer;
s4, baking the substrate layer to enable the conducting layer and the sol layer to be solidified to form an electrode layer, and accordingly obtaining a film electrode;
the steps S1 and S2 can be switched in sequence or performed simultaneously.
As a further improvement, the method also comprises the following steps:
s5, preparing a protective layer material;
the step S5 is provided before the step S3, and the sequence of the steps S1, S2 and S5 can be arbitrarily exchanged or performed simultaneously;
the protective layer material can be coated on the outer surface of the sol layer, and can also be coated between the conductive layer and the sol layer.
As a further improvement, the surface drying temperature does not exceed 60 ℃;
the temperature for baking and curing is 120-150 ℃.
As a further improvement, the nano metal wire comprises a nano silver wire, a nano copper wire or a nano gold wire;
the solvent comprises one or more of alcohols, ethers, esters, ketones and hydrocarbons;
the dispersant comprises diammonium silver hydroxide, tetraammonium copper hydroxide or imines gold complex.
As a further improvement, the method for preparing the sol layer material in step S2 includes:
alkoxide, an acid catalyst and alcohol are mixed according to the mass ratio of 1: 0.1-0.5: 8-25, and stirring for 1-3 hours to prepare a solution A;
mixing and stirring deionized water, alcohol and an inhibitor for 1-3 hours according to the mass ratio of 1: 15-30: 0.03-0.06 to obtain a solution B;
and dropwise adding the solution B into the solution A while continuously stirring, continuously stirring for 2-5 h after dropwise adding is finished, and finally aging the obtained solution at room temperature for 24-48h to obtain the sol layer material.
The third aspect of the invention provides an application of the thin film electrode, wherein the thin film electrode is used as an electrode of a touch screen, a solar cell, a liquid crystal writing pad, an electronic curtain, a heating film or an LED display screen.
Compared with the prior art, the invention has the following technical effects:
according to the preparation method of the thin film electrode, the specific line electrode can be manufactured only by coating twice, the coating processes such as silk screen printing, ink jet printing and the like are relatively mature in technology, and compared with laser etching or yellow light etching, the preparation method is simpler and more convenient in process, higher in efficiency, lower in cost, better in stability and beneficial to improvement of the qualified rate; the conductive area and the non-conductive area in the film electrode are flat in appearance and have no obvious bulge or recess, and the film electrode is used as an electrode for a touch screen and a display screen, has good shadow eliminating effect and good ageing resistance, and can obviously improve the display effect of the touch screen and the display screen; in addition, because the laser etching or yellow light etching process is omitted, the production equipment matched with the method is relatively simple, the cost is lower, and the method is favorable for industrial popularization.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
FIG. 1 is a schematic structural diagram of a thin film electrode according to a preferred embodiment of the present invention;
FIG. 2 is a schematic structural diagram of a thin film electrode according to another preferred embodiment of the present invention;
FIG. 3 shows an electron micrograph of the conductive area of the thin film electrode of the present invention;
FIG. 4 shows an electron micrograph of the insulating region of the thin film electrode of the present invention.
Description of the main element symbols:
a substrate layer-11; a conductive layer-12; sol layer-13; an electrode layer-20; protective layer-14.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention, and are not to be construed as limiting the present invention.
In the description of the present invention, it is to be understood that the terms "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, are not to be construed as limiting the present invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In the present invention, unless otherwise expressly stated or limited, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through an intermediate. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.
Example one
Referring to fig. 1, the present invention discloses a thin film electrode, which includes a substrate layer 11, and an electrode layer 20 and a protection layer 14 disposed on the surface of the substrate layer 11.
The substrate layer 11 may be a flexible substrate layer 11, such as PET, PEN or PI; the substrate layer 11 may also be a rigid substrate layer 11, such as a glass, PMMA or quartz plate; the specific material is selected according to the specific application scene of the film electrode.
The electrode layer 20 is coated on the surface of the substrate layer 11, and nano metal wires are distributed in the electrode layer 20; the electrode layer 20 is macroscopically divided into a conductive area and an insulating area, and the conductive area is distributed according to a preset circuit, that is, the electrode layer 20 has a certain pattern from the appearance, the pattern is formed by a conductive circuit and a non-conductive area, and the specific shape of the pattern is determined according to the functional requirement of a specific circuit.
Wherein, in the electrode layer 20 corresponding to the conductive region, the nano metal wires are connected with each other to form a whole, thereby realizing the conductive function; and cracks exist among the nano metal wires in the electrode layer 20 corresponding to the insulation region, and the depth of the cracks penetrates through the upper surface and the lower surface of the electrode layer 20 or the depth of the cracks accounts for most of the thickness of the whole electrode layer 20, so that the region is not conductive.
It should be noted that the above-mentioned electrical conduction and electrical non-conduction are relative concepts in the art, and in general, the electrical conduction means that the sheet resistance of the thin film electrode is less than 103Ohmic, the non-conducting means that the sheet resistance of the thin film electrode is more than 106Ohm.
Referring to fig. 4, the cracks are microscopically observable structures, invisible to the naked eye, and typically not smaller than 0.1 μm in size; the size of the crack is large enough compared to the distance separating the nano-metal lines and the nano-metal lines to affect the conductivity of certain regions of the electrode layer 20.
The nano metal wire comprises a nano silver wire, a nano copper wire or a nano gold wire, and the size, the characteristics and the manufacturing method of the nano metal wire are the prior art in the field and are not the key points of the invention, so that the details are not repeated.
The protective layer 14 may be laid on the surface of the electrode layer 20 (as shown in fig. 1) or disposed within the surface of the electrode layer 20 (as shown in fig. 2). The location of the protective layer 14, whether it is disposed on the surface of the electrode layer 20 or within the surface of the electrode layer 20, is determined by the particular manufacturing process, which will be described in detail below.
The protective layer 14 is mainly used for physically protecting the electrode layer 20, preventing the surface of the electrode layer 20 from being scratched, and enabling the surface of the electrode layer 20 to be in an isolated state from the external environment, so as to prevent the conductive substance of the electrode layer 20 from contacting with air, effectively overcome the problem that the electrode layer 20 is electrically corroded and oxidized to cause poor chemical stability, and finally shorten the service life of the electrode.
The material of the protective layer 14 is at least one of thermosetting resin and light-cured resin with high light transmittance, and the protective layer 14 obtained from the material is ultrathin and insulated, and has no obvious influence on the conductivity, the light transmittance and the haze of the electrode layer 20.
Specifically, the thermosetting resin comprises one or more of phenolic resin, epoxy resin, unsaturated polyester, amino resin, silicon ether resin, furan resin, polybutadiene resin and organic silicon resin; the light-cured resin comprises one or more of epoxy acrylic resin, polyurethane acrylic resin, polyester acrylic resin, polyether acrylic resin, pure acrylic resin and vinyl resin.
The preparation method of the film electrode comprises the following steps:
s1, preparing a conductive layer 12 material: the conductive layer 12 material includes a nano metal wire, a solvent and a dispersant.
In some embodiments, the nano-metal wire comprises a nano-silver wire, a nano-copper wire, or a nano-gold wire; the solvent comprises one or more of alcohols, ethers, esters, ketones and hydrocarbons; the dispersant comprises diammonium silver hydroxide, tetraammonium copper hydroxide or imines gold complex.
It should be noted that the conductive layer 12 is made of a material conventionally used in the art, and the description of the present invention is omitted.
S2, preparing a sol layer 13 material: the sol layer 13 material comprises one or more of zirconia sol, titania sol, zinc oxide sol and silica sol.
Specifically, taking carbon dioxide sol as an example, the steps for preparing the sol layer 13 are as follows:
titanium metal alkoxide, an acid catalyst and alcohol are mixed according to the mass ratio of 1: 0.1-0.5: 8-25, and stirring for 1-3 hours to prepare a solution A;
mixing and stirring deionized water, alcohol and an inhibitor for 1-3 hours according to the mass ratio of 1: 15-30: 0.03-0.06 to obtain a solution B;
and dropwise adding the solution B into the solution A while continuously stirring, continuously stirring for 2-5 h after dropwise adding is finished, and finally aging the obtained solution at room temperature for 24-48h to obtain the titanium dioxide sol.
The other sol layer 13 materials are prepared by similar steps, except that the alkoxide is replaced by the corresponding metal alkoxide or silicon alkoxide, and the corresponding sol can be obtained after the steps.
And S5, preparing a protective layer 14 material.
The preparation process of the protective layer 14 material is realized by adopting the conventional operation means in the field, and generally, the protective layer 14 material is prepared by at least one of thermosetting resin and light-cured resin with high light transmittance. For example, in some of these embodiments, the thermosetting resin comprises one or more of a phenolic resin, an epoxy resin, an unsaturated polyester, an amino resin, a siloxane resin, a furan resin, a polybutadiene resin, a silicone resin; the light-cured resin comprises one or more of epoxy acrylic resin, polyurethane acrylic resin, polyester acrylic resin, polyether acrylic resin, pure acrylic resin and vinyl resin.
The sequence of the steps S1, S2, and S5 may be arbitrarily changed or performed simultaneously. The three materials are preparation materials for manufacturing the thin film electrode, and the preparation is not orderly divided.
S3, coating the conducting layer 12 material on the surface of the base material layer 11, and drying to form the conducting layer 12; then coating the material of the sol layer 13 on the surface of the conductive layer 12 according to a preset pattern to form the sol layer 13; finally, the protective layer 14 is coated on the surface of the sol layer 13 (as shown in fig. 1).
In some other embodiments, the method of step S3 may be replaced by:
coating the material of the conductive layer 12 on the surface of the base material layer 11 to form the conductive layer 12; then coating the protective layer 14 on the surface of the conductive layer 12, and drying the conductive layer 12 and the protective layer 14; finally, coating the sol layer 13 material on the surface of the protective layer 14 according to a preset pattern to form the sol layer 13 (as shown in fig. 2).
The three-layer material has certain fluidity in the preparation process, and the shape is not completely fixed, so that the three-layer material can be mutually infiltrated and penetrated after being coated.
The coating process comprises spraying, silk-screen printing and ink-jet printing.
The surface drying is low-temperature drying, and the temperature is generally not more than 60 ℃; preferably from 35 ℃ to 60 ℃.
And S4, baking the substrate layer 11 to enable the conductive layer 12, the sol layer 13 and the protective layer 14 to be fused and solidified, thereby obtaining the film electrode.
In general, both the conductive layer 12 and the sol layer 13, which play a major role in conductivity, are defined as electrode layers 20.
Specifically, the baking and curing temperature is 120-150 ℃.
When the thin film electrode obtained by the preparation method is observed under an electron microscope, cracks can be found in the thin film area coated with the sol layer 13, and further, the depth of the cracks penetrates through the upper surface and the lower surface of the electrode layer 20 or the depth of the cracks accounts for the majority of the thickness of the whole electrode layer 20; while the film areas not coated with the sol layer 13 exhibit a dense continuous structure. The area coated with the sol layer 13 has a sheet resistance exceeding 10 by an impedance test6Ohmic, which is considered in the art as non-conductive, while the areal sheet resistance of the uncoated sol layer 13 is less than 103Ohm, this is known in the artAre considered to be electrically conductive. The region where the electrode layer 20 is conductive is defined as a conductive region, and the region where the electrode layer 20 is not conductive is defined as an insulating region.
By purposefully applying the sol layer 13 to the set positions of the conductive layer 12, a circuit pattern satisfying a certain circuit function, that is, a circuit pattern in which conductive regions are distributed according to a predetermined line, can be finally obtained.
As can be seen from the above, the electrode layer 20 is actually obtained by fusing and interacting two material layers, and the specific formation principle is as follows:
the sol layer 13 has a low surface tension and has permeability. The sol layer 13 is selectively coated on the upper surface of the conductive layer 12 or on the upper surface of the protective layer 14, so that the region not coated with the sol layer 13 forms a circuit. Before the sol layer 13 is coated, the conductive layer 12 and the transparent protective layer 14 are surface-dried in a low-temperature drying manner, then the sol layer 13 is coated and then cured by high-temperature baking, cracks are generated after the film of the area coated with the sol layer 13 is cured at high temperature (as shown in fig. 4), so that the area is not conductive, and the film of the other area not coated with the sol layer 13 is cured at high temperature to form a conductive film with a dense structure (as shown in fig. 3), namely a conductive circuit in an electrode structure. The phenomenon of this process is explained: the conductive layer 12 and the transparent protective layer 14 before the sol layer 13 is coated are both formed into a conductive film layer with a loose structure without being completely cured by adopting a low-temperature surface drying mode, and then the sol layer 13 selectively coated on the surface of the conductive film layer can permeate into the conductive film layer due to low surface tension and permeability. Because the material of the sol layer 13 has the characteristic of thermodynamic instability, then in the process of high-temperature solidification, the sol layer 13 and the conductive layer 12 can generate polycondensation (dehydration polycondensation M-OH + HO-M → M-O-M + HOH OR alcohol-loss polycondensation M-OR + HO-M → M-O-M + HOR) reaction under the high-temperature condition; as the solvent (i.e. the solvent remaining in the surface drying process and not completely volatilized) volatilizes during the high temperature process, the film layer has a tendency of freely shrinking, and a biaxial plane tensile stress is generated during the cooling process, and in the process, due to the mismatch of the thermal and mechanical properties of the interface formed between the sol layer 13 and the conductive layer 12, a large residual thermal stress is generated, so that cracks (as shown in fig. 4) start to be generated in the interface layer between the two and extend through the conductive layer 12, and therefore, the continuous structure of the conductive layer 12 in the area is broken, so that the conductive layer is not conductive; and the conductive film formed by curing the areas not coated with the sol layer 13 has a dense structure (as shown in fig. 3), so that the conductivity is not affected. Because the generated cracks are stable and the process is irreversible, the cracks cannot be repaired by heating at high temperature, and the prepared thin film electrode has extremely high stability.
In conclusion, the thin film electrode preparation method provided by the invention can realize the manufacture of the specific line electrode only by coating twice, and the coating processes such as spraying, silk-screen printing, ink-jet printing and the like are relatively mature in technology, and compared with laser etching or yellow light etching, the thin film electrode preparation method is simpler and more convenient in process, higher in efficiency, lower in cost, better in stability and beneficial to improving the product qualification rate; the conductive area and the non-conductive area in the film electrode are flat in appearance and have no obvious bulge or recess, and the film electrode is used as an electrode for a touch screen and a display screen, has good shadow eliminating effect and good ageing resistance, and can obviously improve the display effect of the touch screen and the display screen; in addition, because the laser etching or yellow light etching process is omitted, the production equipment matched with the method is relatively simple, the cost is lower, and the method is favorable for industrial popularization.
The invention also discloses the application of the film electrode, for example, the film electrode is used as an electrode of a touch screen, a solar cell, a liquid crystal writing pad, an electronic curtain, a heating film or an LED display screen, has good shadow eliminating effect and good ageing resistance, and can obviously improve the display effect of the touch screen and the display screen.
Example two
The embodiment discloses a film electrode, which comprises a substrate layer 11, and an electrode layer 20 and a protective layer 14 which are arranged on the surface of the substrate layer 11.
The structure and the preparation process of the substrate layer 11 and the protective layer 14 in this embodiment are the same as those in the first embodiment, except that: the material of the conductive layer 12 for forming the electrode layer 20 is different from that of the first embodiment, the conductive layer 12 of the present embodiment is made of ITO (Indium tin oxide, ITO for short), the formula and the preparation method of the sol layer 13 still use the same material as those of the first embodiment, and the final process for manufacturing the thin film electrode is also consistent with that of the first embodiment.
The material ITO of the conductive layer 12 of this embodiment is prepared by the prior art or is directly purchased from the market, and the formulation and the specific preparation method thereof are not described in detail in the present invention.
As the same functional principle as in the first embodiment, in the area of the ITO conductive layer 12 coated with the sol layer 13, since the material of the sol layer 13 has a thermodynamically unstable characteristic, then cracks are initiated at the interface layer of the conductive layer 12 and the sol layer 13 during the high temperature curing process (as shown in fig. 4), and the cracks propagate through the conductive layer 12, so that the continuous structure of the conductive layer 12 in the area is broken, and therefore, the conductive layer is not conductive; and the conductive film formed by curing the areas not coated with the sol layer 13 has a dense structure (as shown in fig. 3), so that the conductivity is not affected. The cracks are stable and irreversible, and the cracks cannot be repaired even after being heated at high temperature, so that the prepared film electrode has extremely high stability.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.
Claims (10)
1. A thin film electrode, characterized by:
comprises a substrate layer;
an electrode layer is arranged on the surface of the substrate layer, and nano metal wires or ITO are distributed in the electrode layer; the electrode layer is divided into a conductive area and an insulating area, and the conductive area is distributed according to a preset circuit;
in the electrode layer corresponding to the conductive area, the nano metal wires are connected with each other to form a whole; cracks exist among the nano metal wires in the electrode layer corresponding to the insulation area, so that the area is not conductive.
2. The thin film electrode of claim 1, wherein:
the substrate layer comprises a flexible substrate layer or a rigid substrate layer;
the flexible base material layer is made of PET, PEN or PI;
the rigid substrate layer is made of glass, PMMA or quartz plate;
the nano metal wire comprises a nano silver wire, a nano copper wire or a nano gold wire.
3. The thin film electrode of claim 1, wherein:
the protective layer is paved on the surface of the electrode layer or arranged in the surface layer of the electrode layer.
4. The thin film electrode of claim 3, wherein:
the material of the protective layer comprises at least one of thermosetting resin and light-cured resin;
the thermosetting resin comprises one or more of phenolic resin, epoxy resin, unsaturated polyester, amino resin, silicon ether resin, furan resin, polybutadiene resin and organic silicon resin;
the light-cured resin comprises one or more of epoxy acrylic resin, polyurethane acrylic resin, polyester acrylic resin, polyether acrylic resin, pure acrylic resin and vinyl resin.
5. A method for preparing a thin film electrode according to any one of claims 1 to 4, comprising the steps of:
s1, preparing a conductive layer material: the conducting layer material comprises a nano metal wire, a solvent and a dispersing agent;
s2, preparing a sol layer material: the sol layer material comprises one or more of zirconia sol, titanium dioxide sol, zinc oxide sol and silicon dioxide sol;
s3, coating the conducting layer material on the surface of the base material layer, and drying to form a conducting layer; coating the sol layer material on the surface of the conductive layer according to a preset pattern to form a sol layer;
s4, baking the substrate layer to enable the conducting layer and the sol layer to be solidified to form an electrode layer, and accordingly obtaining a film electrode;
the steps S1 and S2 can be switched in sequence or performed simultaneously.
6. The method of claim 5, further comprising the steps of:
s5, preparing a protective layer material;
the step S5 is provided before the step S3, and the sequence of the steps S1, S2 and S5 can be arbitrarily exchanged or performed simultaneously;
the protective layer material can be coated on the outer surface of the sol layer, and can also be coated between the conductive layer and the sol layer.
7. The method according to claim 5 or 6,
the surface drying temperature is not more than 60 ℃;
the temperature for baking and curing is 120-150 ℃.
8. The method according to claim 5,
the nano metal wire comprises a nano silver wire, a nano copper wire or a nano gold wire;
the solvent comprises one or more of alcohols, ethers, esters, ketones and hydrocarbons;
the dispersant comprises diammonium silver hydroxide, tetraammonium copper hydroxide or imines gold complex.
9. The method of claim 5, wherein the step S2 is a method for preparing a sol layer material, comprising:
alkoxide, an acid catalyst and alcohol are mixed according to the mass ratio of 1: 0.1-0.5: 8-25, and stirring for 1-3 hours to prepare a solution A;
mixing and stirring deionized water, alcohol and an inhibitor for 1-3 hours according to the mass ratio of 1: 15-30: 0.03-0.06 to obtain a solution B;
and dropwise adding the solution B into the solution A while continuously stirring, continuously stirring for 2-5 h after dropwise adding is finished, and finally aging the obtained solution at room temperature for 24-48h to obtain the sol layer material.
10. Use of a thin film electrode according to any of claims 1 to 4, wherein:
the thin film electrode is used as an electrode of a touch screen, a solar cell, a liquid crystal writing pad, an electronic curtain, a heating film or an LED display screen.
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