CN109830327A - A kind of preparation method of transparent conductive electrode - Google Patents
A kind of preparation method of transparent conductive electrode Download PDFInfo
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Abstract
The present invention relates to conductive electrode technical fields, and in particular to a kind of preparation method of transparent conductive electrode.The preparation method of transparent conductive electrode of the invention, comprising the following steps: 1) lay nano metal conductive layer in transparent substrate surface；2) masking is patterned to form barrier layer in the nano metal conductive layer surface to the nano metal conductive layer in step 1), not shielded nano metal conductive layer forms conversion zone；3) gas or implanting impurity ion containing doping etchant are imported to conversion zone, make the gas reaction of the nano metal conductive layer of the conversion zone and the etchant containing doping or is doped with foreign ion, non-conductive region is formed, reaction terminates up to transparent conductive electrode.The preparation method of transparent conductive electrode of the invention has the characteristics that the easy adsorbing contaminant of bigger serface, easy fracture using nano metal material, easily loses electric conductivity, and orientation doping forms patterned transparent electrode, preparation method is simple, at low cost.
Description
Technical field
The present invention relates to conductive electrode technical fields, and in particular to a kind of preparation method of transparent conductive electrode.
Background technique
Currently, the material of transparent electrode mainly include transparent conductive oxide film, it is carbon nanotube, graphene, conductive poly-
Close object, metal grill, metal nanometer line etc..Ito transparent electrode has occupied most by its high grade of transparency and high conductivity
The market share.But ITO electrode need using vacuum vapor deposition method prepare, and contain rare element indium, thus cost compared with
Height, and ITO enbrittles, and can not use in flexible device.Thus people begin look for other transparent electrode materials, nanogold
Belong to line due to its lower cost, higher performance, gain great popularity to the adaptability of flexible device, becomes market receiving
Spend highest product.And nano metal line conductive material cooperates graphene, carbon nanotube, conducting polymer, metal oxide
Semiconductor material can obtain better applicability.
In the practical application in the fields such as liquid crystal display, OLED (organic electroluminescent), touch screen, solar battery, often
Need patterned transparent conductive electrode often to complete various functions.For existing transparent conductive material, the prior art is existing
Multiple patterns method, including laser ablation, the chemical etching method of yellow light technique, the chemical etching of silk-screen etching paste, ink-jet
Print the methods of etching solution.Above method can all lead to etching region and non-etched area, and there are larger optical property difference, Er Qieyou
There is larger pollution to environment, preparation flow is complicated, the higher disadvantage of preparation cost.
Application publication number is the manufacturing method and its touch of the Chinese invention patent conductive film of CN103187118A, conductive film
Screen, provides a kind of preparation method of conductive film, opens up groove in substrate using the method for nano impression first, inserts nanogold
The nano pulp that metal particles, nano metal line are formed obtains 5-10um wide by being sintered, the metal grill of 0.5-2um thickness, at this time
Nano-Ag particles or line have been converted into the material of micron order scale its chemical activity and are greatly reduced, and are similar to silver-colored block materials, institute
Needed using initial oxidation with its etching into silver oxide, after the mode that vulcanizes in hydrogen sulfide gas carry out；Wherein oxidation uses
It is that hydrogen peroxide or acid solution are impregnated or are coated with and formed, belongs to the liquid-solid reaction in solution；Although second step has used gas to do instead
Object is answered, obtains nonconducting metallic compound with the oxidation silver reaction in metal grill, but be not using gas directly and receive
Rice metal directly reacts, nor big using nano material specific surface, the characteristics of the high easily doping of nano metal line chemical activity, and
Its preparation process is complicated, also not can guarantee yields.
Authorization Notice No. is a kind of method for preparing transparent conductive electrode of Chinese invention patent of CN 105788760B, is mentioned
A kind of transparent conductive material has been supplied to react the method to form patterned electrodes by gas etch, the method is to come using template
Reaction gas is stopped to enter other parts, after etching, template can be removed easily, but in production, be needed using saturating
Bright conductive electrode processing unit (plant) carries out, and preparation process is cumbersome and speed is slower.
Summary of the invention
The purpose of the present invention is to provide a kind of preparation method of transparent conductive electrode, this method preparation process is more simple
It is single, the preparation rate of transparent conductive electrode can be effectively improved, and have the superior shadow effect that disappears.
To achieve the above object, the technical scheme is that
A kind of preparation method of transparent conductive electrode, comprising the following steps:
1) nano metal conductive layer is laid in transparent substrate surface；
2) masking is patterned in the nano metal conductive layer surface to the nano metal conductive layer in step 1)
Barrier layer is formed, not shielded nano metal conductive layer forms conversion zone；
3) gas doping etchant or implanting impurity ion are imported to the conversion zone in step 2), makes the conversion zone
Nano metal conductive layer and the etchant containing doping gas reaction or be doped with the foreign ion, formation is not led
Electric region, reaction terminate up to transparent conductive electrode.
The gas containing doping etchant includes carrier gas and doping etchant, and the carrier gas is air, nitrogen, oxygen
One or more of gas, inert gas；The doping etchant is ozone, water vapour, hydrogen peroxide, organic amine, ammonia, two
Carbonoxide, organic acid, nitrogen oxides, inorganic volatile acid, in sulphur steam, hydrogen sulfide, sulfur oxide, sulfur-containing compound steam
Any one or a few.
Above-mentioned carrier gas is common gaseous state or plasma-state gas state.
Above-mentioned doping etchant is common gaseous state or plasma-state gas state.
The foreign ion is carbon, nitrogen, oxygen, boron, helium, phosphorus, iron, aluminium, zinc, cobalt, tin, any one or a few in nickel.
The transparent substrate is transparent pet film, clear polyimides resin film, poly- carbon
Acid esters, glass, any one in polymethacrylate resin.
The method for laying nano metal conductive layer in transparent substrate surface in step 1) are as follows: pass through nano-metal dispersion
Coating or spray deposited overlap joint mutual over the transparent substrate form latticed conductive layer.
The nano-metal dispersion be simple-substance nano silvery, nickel, copper, palladium, platinum, gold, cobalt, iron, in aluminium any one or
Several dispersion liquids.
The nano metal that the nano-metal dispersion uses is in nano metal line, nano metal stick, nano metal band
Any one.The diameter of the nano metal is 1-200nm, length 1-200um.
Preferably, the nano-metal dispersion is the dispersion liquid of nano-silver thread, and the diameter of the nano-silver thread is 10-
100nm, 5-100 μm of length.The nano metal silver wire is mono-crystalline structures, has splendid electric conductivity.
Barrier layer in step 2) is the inharmonious adhesive tape of ultraviolet light, peelable glue, easy-to-draw glue, appointing in single side pressure sensitive adhesive tape
Meaning is one or more of.Above-mentioned barrier layer itself has preferable anti-gas-premeable, it is not necessary that filler or impermeabilisation agent is added i.e.
Preferable barriering effect can be played.
Barrier layer in step 2) includes barrier, and the barrier is that can remove ink, transparent resin or photoresist.
The barrier layer further includes auxiliary agent, and the auxiliary agent is impermeabilisation filler, any one or two kinds in anti-etching dose；
The impermeabilisation filler is metal powder, metal oxide, carbon material, nano silica, boron nitride, any one in calcium carbonate
Kind is several, and described anti-etching dose is glucose or vitamin C.
The metal powder is one or more of aluminium powder, copper powder, iron powder, zinc powder, nickel powder；The metal oxide is three
One or more of Al 2 O, manganese dioxide, titanium dioxide, indium tin oxide；The carbon material be graphene, graphite,
One or more of carbon black, carbon fiber.
Ink, transparent resin and photoresist, which can be removed, has certain permeability to gas, mixes in barrier layer when necessary
Enter impermeabilisation filler, one side filler itself is fine and close, has high barrier to gas, and the gas of the etchant containing doping can be prevented to seep
Through barrier layer etching conductive layer；On the other hand, a part of filler can play the role of catalyst, such as manganese dioxide, when
When gaseous etchant agent is ozone, but its catalytic decomposition of manganese dioxide is the oxygen for being unable to doping reaction, further prevents erosion containing doping
The gas for carving agent penetrates barrier layer etching conductive layer.Described anti-etching dose is glucose or vitamin C, is a kind of reducing agent,
Oxidisability etching gas and glucose or the vitamin C reaction penetrated into is consumed, and prevents it from etching below barrier layer
Conductive layer.
The generation type of the barrier layer is that silk-screen printing, bat printing, intaglio printing, offset printing, letterpress, ink-jet are beaten
Print, thermoprint, thermal transfer, spraying, brushing, coating, patterning dispensing, patterned exposure development, fitting in any one.
Barrier layer in step 2) is removed after the completion of prepared by transparent conductive electrode by modes such as heating or part removes
Or retain.
The gas reaction of the nano metal conductive layer of the conversion zone in step 3) and the etchant containing doping
Temperature is 0~300 DEG C.
The nano metal conductive layer of step 3) conversion zone and it is described containing doping etchant gas reaction, or and impurity from
Son is doped, conversion zone be doped into the hetero atoms such as oxygen, sulphur, phosphorus, boron, nitrogen, fluorine, chlorine, bromine, iodine or carbon, nitrogen, oxygen, boron,
The foreign ions such as helium, phosphorus, iron, aluminium, zinc, cobalt, tin, nickel, destroy the crystal structure of nano metal line, and the continuity of energy band is broken
It is bad, increase the resistance of single nano metal line；Or foreign atom destroys the mechanical structure of nano metal line, nano metal
Line is broken, and is formed and is dispersed discontinuous stub；Macroscopic view shows as non-conductive or little.
Implanting impurity ion in step 3) is injected using ion implantation technique in the prior art and equipment.
The present invention is first patterned masking to conductive nano layer to form barrier layer and conversion zone, directly passes through later
The gas or implanting impurity ion of the etchant containing doping are reacted with the nano metal line of conversion zone, make the activity of nano metal line
Doping reaction occurs for point, and the nano metal line after reaction loses excellent electric conductivity, macroscopically shows as conversion zone and not instead
Regional channel resistance value difference is answered to be greater than 1000 times or more, to obtain available patterned electrode.
The preparation method of transparent conductive electrode of the invention, without other transparent conductive electrode processing dresses such as template
It sets, masking is patterned to conductive layer using barrier layer, using nano metal material there is bigger serface easily to adsorb
The characteristics of impurity, easily forfeiture electric conductivity, orientation doping form patterned metal grill；Transparent conductive electrode of the invention
Preparation method is simple, at low cost, and conversion zone and barrier region optical property are close, transparent conductive electrode optical property obtained
Well.
Detailed description of the invention
Fig. 1 is the flow diagram of the preparation method of the transparent conductive electrode in the embodiment of the present invention 1；
(a) is the scanning electron microscope (SEM) photograph that the region of oxygen doping does not occur in embodiment 1 in Fig. 2；(b) oxygen doping post-reaction zone
Scanning electron microscope (SEM) photograph；
(a) is the scanning electron microscope (SEM) photograph that the region of sulfur doping does not occur in embodiment 2 in Fig. 3；(b) sulfur doping post-reaction zone
Scanning electron microscope (SEM) photograph.
Specific embodiment
Embodiment 1
The preparation method of the transparent conductive electrode of the present embodiment, as shown in Figure 1, comprising the following steps:
1) on transparent PET (polyethylene terephthalate) film silk stick blade coating nano-silver thread, modified cellulose and
Nano-silver thread conductive layer is made in the mixed dispersion liquid of surfactant after drying；The diameter of the nano-silver thread be 10~
100nm；The sheet resistance of the nano-silver thread conductive layer is 50ohm/sq；
2) the silk-screen halftone of fabricating patterned: in the barrier layer of nano-silver thread conductive layer surface screen printing pattern, the resistance
Interlayer is made of the transparent UV resin of barrier and impermeabilisation filler nanometer silica, manganese dioxide, is formed by curing by UV lamp
Barrier layer, and the protection of single side pressure sensitive adhesive tape is sticked in electrode outlet line position, not shielded nano-silver thread conductive layer is formed instead
Answer region；
3) it is put into the gas unit of temperature controllable, air-flow, reacting gas concentration, is imported using air as carrier gas smelly
Oxygen is doped with the nano-silver thread conductive layer of above-mentioned conversion zone to react, and the temperature of doping reaction is 60 DEG C, due to oxygen atom
Doping reaction, nano-silver thread portion is converted into silver oxide, and whole electric conductivity is greatly reduced, and due in nano-silver thread
The stress in portion, silver wire can be broken in reflecting point position, and (a) is the scanning electron microscope (SEM) photograph that the region of oxygen doping does not occur in Fig. 2, (b)
For the scanning electron microscope (SEM) photograph of oxygen doping post-reaction zone, compared by Fig. 2 (a) and (b) it is found that being shown as among silver wire after oxygen doping dark
Point (is oxidized to silver oxide), and silver wire can be broken in reflecting point position；Macro manifestations are conversion zone and barrier region resistance value
Ratio is greater than 1000；There is the protection of barrier layer in the region that do not adulterate, and the nano silica in barrier layer can be improved
The air-tightness of bright UV resin prevents the gas ozone of the subsequent etchant containing doping from penetrating transparent UV resin；Even if having a small amount of
Ozone infiltration, manganese dioxide filler can be used as catalyst and ozone are decomposed into the oxygen for being unable to doping reaction, to below barrier layer
Conductive layer play the role of further protection, guarantee that the conductive layer below barrier layer has good electric conductivity；
4) it takes out after reaction, takes single side pressure sensitive adhesive tape off to get patterned transparent conductive electrode.
Embodiment 2
The preparation method of the transparent conductive electrode of the present embodiment, comprising the following steps:
1) the extrusion coated nano-silver thread of slit, modified fibre on clear, colorless PI (polyimide resin) film after corona
The mixed dispersion liquid of dimension element and surfactant, is made nano-silver thread film conductive layer after drying；The diameter of the nano-silver thread
For 10~100nm；
2) contain the photoresist film of copper nanoparticle and silica filler in nano-silver thread film conductive layer surface recombination, lead to
Overexposure photodevelopment, forms photoresist barrier layer, and not shielded nano-silver thread conductive layer forms conversion zone；
3) it is put into the gas unit of temperature controllable, air-flow, reacting gas concentration, is led by carrier gas of pressure-air
Enter micro-hydrogen sulfide gas, on the nano-silver thread surface of conversion zone, the concerted reaction of hydrogen sulfide, oxygen, nano silver occurs, mixes
Miscellaneous temperature is 120 DEG C, and reaction zone nano-silver thread part high activity point position is converted into silver sulfide；Pass through hydroxide after reaction
Sodium solution removes photoresist layer to get patterned transparent conductive electrode.Due to silver wire and sulfur doping, electric conductivity further under
Drop, the nano-silver thread of doped region lose electric conductivity, shown in the scanning electron microscope (SEM) photograph of the conversion zone after sulfur doping such as Fig. 3 (b), not
Occur sulfur doping reaction region scanning electron microscope (SEM) photograph such as Fig. 3 (a) shown in, comparison it is found that doping after nano-silver thread be broken,
It is formed and disperses discontinuous stub, macroscopic view shows as non-conductive or little.
Embodiment 3
The preparation method of the transparent conductive electrode of the present embodiment, comprising the following steps:
1) the extrusion coated painting nano-silver thread of slit, modified cellulose and surface-active on the clear PET film after corona
Nano-silver thread film conductive layer is made in the mixed dispersion liquid of agent after drying；
2) in the compound photoresist film containing nano silica of nano-silver thread conductive layer surface, pass through exposure development, shape
At photoresist barrier layer, not shielded region forms conversion zone；
3) it puts it into ion implantation device, ion source is boron trifluoride, phosphine and arsine etc., forms boron by ionization
B ion and heteroion, purify through magnetic analyzer, allow required boron ion through electric field acceleration, obtain kinetic energy, and pass through electromagnetic field
Deflection is molded into nano-silver thread Thin film conductive layer surface, the conductive layer generation doping reaction of boron element and conversion zone, boron element
Doping directly affect the continuity structure of silver-colored monocrystalline, electric conductivity decline removes photoresist layer by sodium hydroxide solution,
Obtain patterned transparent conductive electrode.
Embodiment 4
The preparation method of the transparent conductive electrode of the present embodiment, comprising the following steps:
1) silk stick blade coating nano-silver thread, modified cellulose and surfactant on transparent polymethacrylate resin film
Mixed dispersion liquid, nano-silver thread conductive layer is made after drying；The diameter of the nano-silver thread is 10~100nm；
2) the silk-screen halftone of fabricating patterned: in the barrier layer of nano-silver thread conductive layer surface screen printing pattern, the resistance
Interlayer is by the transparent UV resin of barrier, anti-etching dose of glucose group at being formed by curing barrier layer by UV lamp, and draw in electrode
Line position sticks the protection of single side pressure sensitive adhesive tape, and not shielded nano-silver thread conductive layer forms conversion zone；
3) it is put into the gas unit of temperature controllable, air-flow, reacting gas concentration, with nitrogen and oxygen mixture
It imports ozone for carrier gas and is doped with the nano-silver thread conductive layer of above-mentioned conversion zone and react, the temperature of doping reaction is 80
DEG C, due to the doping reaction of oxygen atom, nano-silver thread portion is converted into silver oxide, and whole electric conductivity is greatly reduced, and
Due to the stress inside nano-silver thread, silver wire can be broken in reflecting point position；Due to the protective effect of barrier layer, barrier layer lower section
Conductive layer it is not aerobic atom doped, have good electric conductivity；Even if there is a small amount of ozone to penetrate UV resin, in barrier layer
Glucose can react with ozone and consume the ozone of infiltration, avoid influence of the ozone infiltration to conductive layer；
4) it is taken out after doping reaction, takes single side pressure sensitive adhesive tape off to get patterned transparent conductive electrode.
Embodiment 5
The preparation method of the transparent conductive electrode of the present embodiment, comprising the following steps:
1) silk stick blade coating nano-silver thread, modified cellulose and surfactant on transparent polymethacrylate resin film
Mixed dispersion liquid, nano-silver thread conductive layer is made after drying；The diameter of the nano-silver thread is 10~100nm；
2) the silk-screen halftone of fabricating patterned: in the barrier layer of nano-silver thread conductive layer surface screen printing pattern, the resistance
Interlayer is made of the transparent UV resin of barrier, is formed by curing barrier layer by UV lamp, and stick single side in electrode outlet line position
Pressure sensitive adhesive tape protection, not shielded nano-silver thread conductive layer form conversion zone；
3) using pressure-air as carrier gas, mixing hydrogen sulfide gas, using jet plasma spray gun, carrier gas and doping are imported
Agent is converted into plasma-state gas, purges conductive film surface, the temperature of doping reaction is 80 DEG C, since the doping of sulphur atom is anti-
It answers, nano-silver thread portion is converted into silver sulfide, and whole electric conductivity is greatly reduced, and due to answering inside nano-silver thread
Power, silver wire can be broken in reflecting point position；Due to the protective effect of barrier layer, the conductive layer below barrier layer is not adulterated,
With good electric conductivity；
4) it is taken out after doping reaction, takes single side pressure sensitive adhesive tape off to get patterned transparent conductive electrode.
Embodiment 6
The preparation method of the transparent conductive electrode of the present embodiment, comprising the following steps:
1) silk stick blade coating nano-silver thread, modified cellulose and surfactant on transparent polymethacrylate resin film
Mixed dispersion liquid, nano-silver thread conductive layer is made after drying；The diameter of the nano-silver thread is 10~100nm；
2) the silk-screen halftone of fabricating patterned: in the barrier layer of nano-silver thread conductive layer surface screen printing pattern, the resistance
Interlayer is made of the transparent UV resin of barrier, is formed by curing barrier layer by UV lamp, and stick single side in electrode outlet line position
Pressure sensitive adhesive tape protection, not shielded nano-silver thread conductive layer form conversion zone；
3) using pressure-air as carrier gas, mixing ozone gas is imported, heats mixed gas using heater blower gun, purging is conductive
Film surface, the temperature of doping reaction are 50 DEG C, and since Oxidation Doping reacts, whole electric conductivity is greatly reduced, and due to receiving
Stress inside rice silver wire, silver wire can be broken in reflecting point position；Conduction due to the protective effect of barrier layer, below barrier layer
Layer does not adulterate, has good electric conductivity；
4) it is taken out after doping reaction, takes single side pressure sensitive adhesive tape off to get patterned transparent conductive electrode.
It will be apparent to those skilled in the art that can make various other according to the above description of the technical scheme and ideas
Corresponding change and deformation, and all these changes and deformation all should belong to the protection scope of the claims in the present invention
Within.
Claims (10)
1. a kind of preparation method of transparent conductive electrode, which comprises the following steps:
1) nano metal conductive layer is laid in transparent substrate surface；
2) masking is patterned to be formed in the nano metal conductive layer surface to the nano metal conductive layer in step 1)
Barrier layer, not shielded nano metal conductive layer form conversion zone；
3) gas or implanting impurity ion that the etchant containing doping is imported to the conversion zone in step 2), make the conversion zone
Nano metal conductive layer and the etchant containing doping gas reaction or be doped with the foreign ion, formation is not led
Electric region, reaction terminate up to transparent conductive electrode.
2. the preparation method of transparent conductive electrode according to claim 1, which is characterized in that described to contain doping etchant
Gas include carrier gas and doping etchant, the carrier gas be one or more of air, nitrogen, oxygen, inert gas；Institute
State doping etchant be ozone, it is water vapour, hydrogen peroxide, organic amine, ammonia, carbon dioxide, organic acid, nitrogen oxides, inorganic
Any one or a few in volatile acid, sulphur steam, hydrogen sulfide, sulfur oxide, sulfur-containing compound steam.
3. the preparation method of transparent conductive electrode according to claim 1, which is characterized in that the foreign ion be carbon,
Nitrogen, oxygen, boron, helium, phosphorus, iron, aluminium, zinc, cobalt, tin, any one or a few in nickel.
4. the preparation method of transparent conductive electrode according to claim 1, which is characterized in that in transparent substrate in step 1)
Surface laying nano metal conductive layer method are as follows: by nano-metal dispersion by coating or it is spray deposited over the transparent substrate
Mutually overlap joint forms latticed conductive layer.
5. the preparation method of transparent conductive electrode according to claim 4, which is characterized in that the nano-metal dispersion
For any one or a few the dispersion liquid in simple-substance nano silvery, nickel, copper, palladium, platinum, gold, cobalt, iron, aluminium.
6. the preparation method of transparent conductive electrode according to claim 4, which is characterized in that the nano-metal dispersion
For the dispersion liquid of nano-silver thread, the diameter of the nano-silver thread is 10-100nm, 5-100 μm of length.
7. the preparation method of transparent conductive electrode according to claim 1, which is characterized in that the barrier layer in step 2) is
The inharmonious adhesive tape of ultraviolet light, peelable glue, easy-to-draw glue, any one or a few in single side pressure sensitive adhesive tape.
8. the preparation method of transparent conductive electrode according to claim 1, which is characterized in that the barrier layer packet in step 2)
Barrier is included, the barrier is that can remove ink, transparent resin or photoresist.
9. the preparation method of transparent conductive electrode according to claim 8, which is characterized in that the barrier layer further includes helping
Agent, the auxiliary agent are impermeabilisation filler, any one or two kinds in anti-etching dose；The impermeabilisation filler is metal powder, gold
Belong to oxide, carbon material, nano silica, boron nitride, any one or a few in calcium carbonate, described anti-etching dose is Portugal
Grape sugar or vitamin C.
10. the preparation method of transparent conductive electrode according to claim 1, which is characterized in that the formation of the barrier layer
Mode is silk-screen printing, bat printing, intaglio printing, offset printing, letterpress, inkjet printing, thermoprint, thermal transfer, spraying, brush
Apply, coating, patterning dispensing, patterned exposure development, fitting in any one.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110828066A (en) * | 2019-11-04 | 2020-02-21 | 惠州达祺光电科技有限公司 | Method for manufacturing transparent conductive film |
| CN112191847A (en) * | 2020-09-22 | 2021-01-08 | 燕山大学 | Steel sample sintering forming method for artificially implanting inclusions |
| CN113793718A (en) * | 2021-08-23 | 2021-12-14 | 湖南兴威新材料有限公司 | Thin film electrode and preparation method and application thereof |
| CN113808781A (en) * | 2021-08-23 | 2021-12-17 | 湖南兴威新材料有限公司 | Thin film electrode and preparation method and application thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7399703B2 (en) * | 2004-06-01 | 2008-07-15 | Canon Kabushiki Kaisha | Process for patterning nanocarbon material, semiconductor device, and method for manufacturing semiconductor device |
| CN105788760A (en) * | 2016-04-22 | 2016-07-20 | 陈初群 | Method of manufacturing transparent conductive electrode |
| CN107093500A (en) * | 2017-03-30 | 2017-08-25 | 华南理工大学 | A kind of graphic method of nano silver wire flexible transparent conductive film |
| CN108597648A (en) * | 2018-01-03 | 2018-09-28 | 京东方科技集团股份有限公司 | A kind of patterned electrode layer, the patterning method of electrode layer, display device |
| CN208477494U (en) * | 2018-06-30 | 2019-02-05 | 云谷（固安）科技有限公司 | Patterning device |
-
2019
- 2019-02-22 CN CN201910131907.4A patent/CN109830327B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7399703B2 (en) * | 2004-06-01 | 2008-07-15 | Canon Kabushiki Kaisha | Process for patterning nanocarbon material, semiconductor device, and method for manufacturing semiconductor device |
| CN105788760A (en) * | 2016-04-22 | 2016-07-20 | 陈初群 | Method of manufacturing transparent conductive electrode |
| CN107093500A (en) * | 2017-03-30 | 2017-08-25 | 华南理工大学 | A kind of graphic method of nano silver wire flexible transparent conductive film |
| CN108597648A (en) * | 2018-01-03 | 2018-09-28 | 京东方科技集团股份有限公司 | A kind of patterned electrode layer, the patterning method of electrode layer, display device |
| CN208477494U (en) * | 2018-06-30 | 2019-02-05 | 云谷（固安）科技有限公司 | Patterning device |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110828066A (en) * | 2019-11-04 | 2020-02-21 | 惠州达祺光电科技有限公司 | Method for manufacturing transparent conductive film |
| CN112191847A (en) * | 2020-09-22 | 2021-01-08 | 燕山大学 | Steel sample sintering forming method for artificially implanting inclusions |
| CN113793718A (en) * | 2021-08-23 | 2021-12-14 | 湖南兴威新材料有限公司 | Thin film electrode and preparation method and application thereof |
| CN113808781A (en) * | 2021-08-23 | 2021-12-17 | 湖南兴威新材料有限公司 | Thin film electrode and preparation method and application thereof |
| CN113808781B (en) * | 2021-08-23 | 2023-11-21 | 湖南兴威新材料有限公司 | Thin film electrode and preparation method and application thereof |
| CN113793718B (en) * | 2021-08-23 | 2024-01-09 | 湖南兴威新材料有限公司 | Thin film electrode and preparation method and application thereof |
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