CN113791076A - Dark field imaging detection system - Google Patents
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- CN113791076A CN113791076A CN202110976103.1A CN202110976103A CN113791076A CN 113791076 A CN113791076 A CN 113791076A CN 202110976103 A CN202110976103 A CN 202110976103A CN 113791076 A CN113791076 A CN 113791076A
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- 238000003384 imaging method Methods 0.000 title claims abstract description 54
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- 238000000034 method Methods 0.000 description 10
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- 238000001900 extreme ultraviolet lithography Methods 0.000 description 4
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
- G01N2021/8822—Dark field detection
Abstract
The invention discloses a dark field imaging detection system which comprises a vacuum chamber, a light source, an optical assembly and an image acquisition device, wherein a detection position is arranged in the vacuum chamber and used for placing an extreme ultraviolet mask, the light source is arranged in the vacuum chamber and used for emitting ultraviolet light beams to the extreme ultraviolet mask, the optical assembly is arranged in the vacuum chamber and used for receiving scattered light emitted by the extreme ultraviolet mask and forming the scattered light into an optical image, and the image acquisition device is used for acquiring the optical image. When the dark field imaging detection system is used for detection, the light source emits extreme ultraviolet light beams, the extreme ultraviolet light beams irradiate on the extreme ultraviolet mask, if the extreme ultraviolet mask has defects, scattered light can be generated, the optical assembly absorbs the scattered light and forms the scattered light into an optical image, and the image acquisition device acquires the optical image to realize dark field imaging. The dark field imaging detection system is simple in structure, low in manufacturing cost and high in sensitivity.
Description
Technical Field
The invention relates to the technical field of electronic manufacturing, in particular to a dark field imaging detection system.
Background
This section provides background information related to the present disclosure only and is not necessarily prior art.
Extreme ultraviolet lithography is the mainstream lithography technology for nodes below 7nm, and in the process of extreme ultraviolet lithography, an extreme ultraviolet mask serves as a 'mold' in the process of extreme ultraviolet lithography.
The extreme ultraviolet mask is prepared by first plating a Mo/Si (molybdenum/silicon) multilayer film on a substrate with a low thermal expansion coefficient, then plating an absorbing layer, and then patterning the absorbing layer by electron beam lithography. However, the low cte substrate may cause dishing, protrusion, and scratching during cmp and subsequent cleaning. In the process of Mo/Si multilayer film deposition and cover layer plating on the multilayer film, new defects are generated, so the quality of the extreme ultraviolet mask directly determines the yield of the extreme ultraviolet photoetching chip.
In order to ensure the quality of the extreme ultraviolet mask, the extreme ultraviolet mask needs to be subjected to photochemical detection, and in the prior art, an extreme ultraviolet mask detection system has a complex structure, high manufacturing cost and low sensitivity.
Disclosure of Invention
The invention aims to at least solve the problems of complex structure, high manufacturing cost and low sensitivity of an extreme ultraviolet mask detection system. The purpose is realized by the following technical scheme:
the invention provides a dark field imaging detection system, which comprises:
a detection position is arranged in the vacuum chamber and used for placing an extreme ultraviolet mask;
the light source is arranged in the vacuum chamber and is used for emitting ultraviolet light beams to the extreme ultraviolet mask;
the optical assembly is arranged in the vacuum cavity and is used for receiving scattered light rays emitted by the extreme ultraviolet mask and forming an optical image by the scattered light rays;
an image capture device for capturing the optical image.
According to the dark field imaging detection system, when the extreme ultraviolet mask needs to be detected, the extreme ultraviolet mask is placed on a detection position, the dark field imaging detection system is started, the light source emits extreme ultraviolet light beams, the extreme ultraviolet light beams irradiate on the extreme ultraviolet mask, if the extreme ultraviolet mask has defects, the extreme ultraviolet light beams irradiating on the extreme ultraviolet mask can generate scattered light, the optical assembly absorbs the scattered light and forms the scattered light into an optical image, and the image acquisition device acquires the optical image, so that dark field imaging is achieved, and further detection of the extreme ultraviolet mask is achieved. The dark field imaging detection system is simple in structure, low in manufacturing cost and high in sensitivity.
In addition, the dark field imaging detection system according to the invention can also have the following additional technical characteristics:
in some embodiments of the invention, the optical assembly includes a zone plate spaced above the euv mask for forming the optical image.
In some embodiments of the present invention, the optical assembly further comprises a light blocking member for blocking reflected light emitted through the extreme ultraviolet mask.
In some embodiments of the present invention, the light blocking member is disposed between the extreme ultraviolet mask and the zone plate and serves to block the reflected light.
In some embodiments of the present invention, the light blocking member is disposed on the zone plate and is used to block the reflected light.
In some embodiments of the invention, the zone plate is provided with a light-transmitting hole, and the light-transmitting hole is configured to allow the reflected light emitted by the extreme ultraviolet mask to pass through.
In some embodiments of the invention, the dark field imaging detection system further comprises a detector for detecting the reflected light passing through the light-transmissive hole.
In some embodiments of the present invention, the optical assembly further comprises a reflector through which the extreme ultraviolet light beam is reflected onto the extreme ultraviolet mask.
In some embodiments of the present invention, the reflector is spaced above the zone plate, and an angle between an incident direction of the extreme ultraviolet light beam on the reflector and a reflection direction of the extreme ultraviolet light beam on the reflector is greater than 90 ° and less than 180 °;
or the reflecting pieces are arranged between the zone plate and the extreme ultraviolet mask at intervals, and the included angle between the incident direction of the extreme ultraviolet light beam on the reflecting piece and the reflecting direction of the extreme ultraviolet light beam on the reflecting piece is equal to 90 degrees.
In some embodiments of the invention, the optical assembly further comprises a loading stage having a first adjustment mechanism, the zone plate being disposed on the loading stage, the first adjustment mechanism being for adjusting a degree of freedom of the loading stage;
and/or the dark field imaging detection system further comprises a placing table with a second adjusting mechanism, the detection position is formed on the placing table, and the second adjusting mechanism is used for adjusting the degree of freedom of the placing table;
and/or the dark field imaging detection system further comprises an isolation assembly disposed outside the vacuum chamber, the isolation assembly comprising thermal insulation, acoustic insulation, and vibration isolation.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention. Also, like parts are designated by like reference numerals throughout the drawings. In the drawings:
fig. 1 schematically shows a schematic configuration diagram (partial configuration) of a first embodiment of a dark field imaging detection system according to an embodiment of the present invention;
fig. 2 schematically shows a schematic structural diagram (partial structure) of a second embodiment of a dark field imaging detection system according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of the zone plate configuration of the dark field imaging detection system shown in FIG. 2;
fig. 4 schematically shows a schematic configuration diagram (partial configuration) of a third embodiment of a dark field imaging detection system according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of the zone plate configuration of the dark field imaging detection system shown in FIG. 4;
fig. 6 schematically shows a schematic configuration diagram (partial configuration) of a fourth embodiment of a dark field imaging detection system according to an embodiment of the present invention.
The reference numbers are as follows:
100 is a dark field imaging detection system;
10 is an optical component;
11 is a zone plate, 111 is a light hole, 12 is a light blocking piece, 13 is a reflecting piece, 14 is a loading platform, and 141 is a transmission hole;
20 is an image acquisition device;
30 is a light source;
31 is an extreme ultraviolet beam, 32 is a reflected light, 33 is a scattered light, and 34 is an optical image;
40 is a detecting piece;
200 is an extreme ultraviolet mask.
Detailed Description
Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
It is to be understood that the terminology used herein is for the purpose of describing particular example embodiments only, and is not intended to be limiting. As used herein, the singular forms "a", "an" and "the" may be intended to include the plural forms as well, unless the context clearly indicates otherwise. The terms "comprises," "comprising," "including," and "having" are inclusive and therefore specify the presence of stated features, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, steps, operations, elements, components, and/or groups thereof. The method steps, processes, and operations described herein are not to be construed as necessarily requiring their performance in the particular order described or illustrated, unless specifically identified as an order of performance. It should also be understood that additional or alternative steps may be used.
Although the terms first, second, third, etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms may be only used to distinguish one element, component, region, layer or section from another region, layer or section. Terms such as "first," "second," and other numerical terms when used herein do not imply a sequence or order unless clearly indicated by the context. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the example embodiments.
For convenience of description, spatially relative terms, such as "inner", "outer", "lower", "below", "upper", "above", and the like, may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. Such spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as "below" or "beneath" other elements or features would then be oriented "above" or "over" the other elements or features. Thus, the example term "below … …" can include both an orientation of above and below. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.
As shown in fig. 1 to 6, according to an embodiment of the present invention, a dark field imaging detection system 100 is provided, the dark field imaging detection system 100 includes a vacuum chamber, a light source 30, an optical assembly 10, and an image acquisition device 20, the vacuum chamber is provided with a detection position for placing an euv mask 200, the light source 30 is disposed in the vacuum chamber and is used for emitting an euv light beam 31 to the euv mask 200, the optical assembly 10 is disposed in the vacuum chamber, the optical assembly 10 is used for receiving a scattered light 33 emitted from the euv mask 200 and forming the scattered light 33 into an optical image 34, and the image acquisition device 20 is used for acquiring the optical image 34.
Specifically, when the euv mask 200 needs to be detected, the euv mask 200 is placed on a detection position, the dark-field imaging detection system 100 is started, the light source 30 emits an euv light beam 31, the euv light beam 31 irradiates the euv mask 200, if the euv mask 20 has a defect, the euv light beam 31 irradiating the euv mask 20 generates a scattered light 33, the optical assembly 10 receives the scattered light 33 and forms the scattered light 33 into an optical image 34, and the image acquisition device 20 acquires the optical image 34, so that dark-field imaging is realized, and further, the euv mask 200 is detected. The dark field imaging detection system 100 has the advantages of simple structure, low manufacturing cost and high sensitivity.
It should be understood that the optical image 34 means that the scattered light 33 is transmitted outward through the optical assembly 10, the transmitted light irradiates the image capturing device 20 to present an image, and the image capturing device 20 captures the optical image 34 to detect the euv mask 200.
In addition, the extreme ultraviolet light beam 31 emitted by the light source 30 is irradiated on the extreme ultraviolet mask 20, only the reflected light ray 32 is generated if the extreme ultraviolet mask 20 has no defect, the reflected light ray 32 and the scattered light ray 33 are generated if the extreme ultraviolet mask 20 has a defect, and the scattered light ray 33 is received and processed by the optical assembly 10, so that an image is formed on the image acquisition device 20.
It should be noted that the image capturing device 20 is an euv camera, so as to effectively ensure the quality of captured images, and further ensure the detection accuracy of the euv mask 200.
In addition, in the detection process, air and impurities may affect the extreme ultraviolet light beam 31, so the optical assembly 10, the light source 30 and the image acquisition device 20 need to be disposed in the vacuum chamber, and a vacuum and ultra-clean environment is ensured in the vacuum chamber, and the material used in the vacuum chamber needs to meet the requirement of extreme ultraviolet lithography.
It is further understood that, as shown in fig. 1-6, the optical assembly 10 includes a zone plate 11, the zone plate 11 being spaced above the euv mask 200 and used to form the optical image 34. Specifically, the zone plate 11 is disposed above the detection position where the euv mask 200 is disposed at an interval, the euv light beam 31 emitted from the light source 30 is irradiated on the euv mask 200, the euv mask 200 having defects scatters the euv light beam 31 to form scattered light 33, the scattered light 33 is irradiated on the zone plate 11, and the zone plate 11 receives the scattered light 33 and images the scattered light 33 on the image acquisition device 20 to realize the effect of dark field imaging.
The scattered light 33 processed by the zone plate 11 has a simple structure and low manufacturing cost, and can effectively improve the sensitivity of detection.
Further, the optical module 10 further includes a loading table 14 having a first adjustment mechanism for adjusting the degree of freedom of the loading table 14, and the zone plate 11 is disposed on the loading table 14. Specifically, the loading platform 14 is arranged above the detection position with the extreme ultraviolet mask 200 at intervals, the zone plate 11 is arranged on the loading platform 14, and the distance between the zone plate 11 and the extreme ultraviolet mask 200 can be adjusted by adjusting the first adjusting mechanism, so that the zone plate 11 can cover the completely scattered light 33, and the detection precision of the extreme ultraviolet mask 200 is further ensured.
It should be noted that the first adjusting mechanism includes a plurality of first power members (for example, air cylinders or motors, etc.), the plurality of first power members are respectively in transmission connection with the loading platform 14, and the adjustment of multiple degrees of freedom of the loading platform 14 is realized through the cooperation of the plurality of first power members, so that the position of the zone plate 11 on the loading platform 14 meets the requirement of detection, and the detection accuracy is further improved.
It should be noted that the first adjustment mechanism has nanometer-scale adjustment capability (in the X-axis, Y-axis, and Z-axis directions), thereby further improving the sensitivity of the euv mask 200 detection.
Further, the dark field imaging detection system 100 further includes a placing table having a second adjusting mechanism, the detection position is formed on the placing table, and the second adjusting mechanism is used for adjusting the degree of freedom of the placing table. Specifically, the detection position is formed on the object placing table, and the second adjusting mechanism is used for adjusting the degree of freedom of the object placing table, so that the position of the extreme ultraviolet mask 200 arranged on the detection position meets the detection requirement.
It should be understood that, the first adjusting mechanism and the second adjusting mechanism cooperate with each other, so as to achieve full coverage of the detection position of the euv mask 200, and further meet the detection requirement of the euv mask 200.
It should be noted that the second adjusting mechanism includes a plurality of second power components (for example, an air cylinder or a motor, etc.), the plurality of second power components are respectively in transmission connection with the object placing table, and the adjustment of multiple degrees of freedom of the object placing table is realized through the synergistic effect of the plurality of second power components, so that the position of the extreme ultraviolet mask 200 on the object placing table meets the detection requirement, and the detection precision is further improved.
It should be noted that the second adjustment mechanism has nanometer-scale adjustment capability (in the X-axis, Y-axis, and Z-axis directions), thereby further improving the sensitivity of the euv mask 200 detection.
Further, the dark field imaging detection system 100 further includes an isolation assembly disposed outside the vacuum chamber, the isolation assembly including a thermal insulation member, a sound insulation member, and a vibration isolation member. Specifically, the heat insulating member and the sound insulating member may be one member or two members, and taking the two members as an example, the heat insulating member and the sound insulating member may be provided as a sound insulating and heat insulating cover, and the sound insulating and heat insulating cover is provided outside the vacuum chamber, so as to realize heat insulation and sound insulation of the vacuum chamber, thereby avoiding the influence of the external temperature and noise on the inside of the vacuum chamber, and further ensuring the detection accuracy.
In addition, in the invention, the vibration isolation piece comprises a supporting platform and a buffer mechanism arranged on the supporting platform, the vacuum chamber (including each component in the vacuum chamber) is arranged on the supporting platform, and the buffer mechanism is used for absorbing vibration so as to realize vibration isolation of the vacuum chamber (including each component in the vacuum chamber), thereby avoiding the influence of the vibration of the surrounding environment on the detection and further ensuring the detection precision.
Further, as shown in fig. 1 to 6, the optical assembly 10 further includes a reflector 13, and the euv light beam 31 is reflected by the reflector 13 onto the euv mask 200. Specifically, in the present invention, the extreme ultraviolet light beam 31 emitted by the light source 30 is transmitted in a horizontal direction, and the reflection member 13 is disposed to change the transmission direction of the extreme ultraviolet light beam 31, so as to ensure that the extreme ultraviolet light beam 31 can effectively irradiate on the extreme ultraviolet mask 200, thereby ensuring effective detection.
It should be noted that the reflector 13 may also be connected to a driving element (such as a motor), and the driving element is used to adjust the reflection angle of the reflector 13, so as to increase the adjustment range of the irradiation angle of the euv light beam 31, thereby further meeting the detection requirement of the euv mask 200.
The reflector 13 may be an optical member having a reflecting property such as a mirror.
In some embodiments of the present invention, as shown in fig. 1 to 5, the optical assembly 10 further includes a light barrier 12, and the light barrier 12 is used for blocking the reflected light 32 emitted through the euv mask 200. Specifically, when the euv mask 200 is inspected, the euv mask 200 is placed on an inspection position, the dark-field imaging inspection system 100 is started, the light source 30 emits an euv light beam 31, the euv light beam 31 irradiates the euv mask 200, if the euv mask 200 has a defect, a scattered light 33 is generated, the light blocking member 12 blocks the reflected light 32, the zone plate 11 receives the scattered light 33 and forms an optical image 34 with the scattered light 33, and the image acquisition device 20 acquires the optical image 34, thereby implementing dark-field imaging. By arranging the light blocking member 12, the influence of the reflected light 32 on the detection process is effectively avoided, so that the detection precision of the extreme ultraviolet mask 200 is further improved.
It should be noted that, if the euv mask 200 has a defect, the scattering angle of the scattered light 33 generated by the euv light beam 31 irradiated on the euv mask 200 is large, and the light blocking member 12 is disposed at a position that does not block the scattered light 33, thereby further ensuring the detection accuracy of the euv mask 200.
In some examples of the present embodiment, as shown in fig. 1, the light blocking member 12 is disposed between the euv mask 200 and the zone plate 11 and serves to block the reflected light 32. Specifically, reflected light 32 is generated on the euv mask 200 irradiated by the euv light beam 31, the generated reflected light 32 is blocked by the light blocking member 12 disposed between the euv mask 200 and the zone plate 11, if the euv mask 200 has a defect, scattered light 33 is generated, the generated scattered light 33 is not blocked by the light blocking member 12 and illuminates the zone plate 11, and the scattered light 33 is diffracted by the zone plate 11 to form an optical image 34 and is acquired by the image acquisition device 20, thereby implementing dark field imaging.
It is to be understood that by disposing the light blocking member 12 between the euv mask 200 and the zone plate 11, blocking of the reflected light rays 32 can be effectively achieved, thereby avoiding the influence of the reflected light rays 32 on the detection process.
It should be noted that the light-blocking member 12 may be a light-absorbing member, and the reflected light 32 is absorbed by the light-absorbing member, so as to further avoid the influence of the reflected light 32 on the detection process.
In some examples of the present embodiment, as shown in fig. 2 and 3, the light blocking member 12 is provided on the zone plate 11 and serves to absorb the reflected light 32. Specifically, the light blocking member 12 is disposed at the center of the zone plate 11, the euv mask 200 irradiated by the euv light beam 31 generates the reflected light 32, the generated reflected light 32 is irradiated on the zone plate 11, if the euv mask 200 has a defect, the scattered light 33 is generated, the generated scattered light 33 is irradiated on the zone plate 11, the light blocking member 12 on the zone plate 11 blocks the reflected light 32, the generated scattered light 33 is not blocked by the light blocking member 12, the scattered light 33 is diffracted by the zone plate 11 to form the optical image 34 and is acquired by the image acquisition device 20, thereby implementing dark-field imaging. The structure of the dark field imaging detection system 100 is further simplified by disposing the light blocking member 12 on the zone plate 11.
It is noted that, in the present example, the light blocking member 12 is an absorbing film that is coated on the illumination area of the zone plate 11 that reflects the light 32 (the body of the zone plate 11 that is outside the illumination area of the reflected light 32 is not coated) to block the reflected light 32.
In some examples of the present embodiment, as shown in fig. 4 and 5, the zone plate 11 is provided with a light-transmitting hole 111, and the light-transmitting hole 111 is provided to pass the reflected light 32 emitted from the euv mask 200. Specifically, the light transmission hole 111 is arranged at the middle position of the zone plate 11, the euv mask 200 irradiated by the euv light beam 31 generates reflected light 32, if the euv mask 200 has a defect, scattered light 33 is generated, the generated reflected light 32 and scattered light 33 are both irradiated on the zone plate 11, the reflected light 32 passes through the light transmission hole 111, the generated scattered light 33 is irradiated on a region of the zone plate 11 outside the light transmission hole 111, and the scattered light 33 is diffracted by the zone plate 11 to form an optical image 34 and is acquired by the image acquisition device 20, so that dark-field imaging is realized.
It should be understood that, in the present example, the transmission direction of the reflected light 32 through the light hole 111 is at an angle to the transmission direction of the scattered light 33 after passing through the zone plate 11, so as to avoid the influence of the reflected light 32 on the detection process.
In this example, the dark field imaging detection system 100 further comprises a detector 40, the detector 40 being configured to detect the reflected light rays 32 passing through the light-transmissive hole 111. Specifically, the detecting member 40 is a detector, which receives the reflected light 32 emitted through the light-transmitting hole 111 and can perform the bright field detection function.
In some examples of the present embodiment, the reflector 13 is disposed above the zone plate 11 at an interval, and an angle between an incident direction of the extreme ultraviolet light beam 31 on the reflector 13 and a reflection direction of the extreme ultraviolet light beam 31 on the reflector 13 is greater than 90 ° and less than 180 °. Specifically, the reflector 13 is arranged above the loading platform 14 with the zone plate 11 at an interval, the loading platform 14 is provided with a transmission hole 141, the extreme ultraviolet light beam 31 reflected by the reflector 13 passes through the transmission hole 141 and then irradiates on the extreme ultraviolet mask 200, and by the arrangement mode of the reflector 13, the extreme ultraviolet light beam 31 is ensured to irradiate on the extreme ultraviolet mask 200, and meanwhile, the mutual influence between the extreme ultraviolet light beam 31 and the reflected light ray 32 and the scattered light ray 33 can be effectively avoided.
In some examples of the present embodiment, as shown in fig. 6, the reflector 13 is disposed at an interval between the zone plate 11 and the euv mask 200, and an angle between an incident direction of the euv light beam 31 on the reflector 13 and a reflection direction of the euv light beam 31 on the reflector 13 is equal to 90 °. Specifically, after the light source 30 emits the extreme ultraviolet light beam 31, the extreme ultraviolet light beam 31 irradiates on the reflector 13, the reflector 13 emits the extreme ultraviolet light beam 31 onto the extreme ultraviolet mask 200, the reflector 13 is arranged between the zone plate 11 and the extreme ultraviolet mask 200 at intervals, the reflector 13 is arranged such that an included angle between an incident direction of the extreme ultraviolet light beam 31 on the reflector 13 and a reflection direction of the extreme ultraviolet light beam 31 on the reflector 13 is equal to 90 °, the extreme ultraviolet mask 200 generates the reflected light ray 32, the generated reflected light ray 32 is reflected back along an optical path of the extreme ultraviolet light beam 31, if the extreme ultraviolet mask 20 has a defect, the generated reflected light ray 33 is generated, and the generated scattered light ray 33 is diffracted by the zone plate 11 to form an optical image 34 and is acquired by the image acquisition device 20, so as to realize dark field imaging. The structure of the whole system can be further simplified by the arrangement of the reflecting member 13.
Compared with the prior art, the dark field imaging detection system provided by the invention has the following beneficial effects:
(1) the manufacturing cost is low.
(2) The light path adopts reflection and diffraction elements, and is simpler than the prior multiple reflectors.
(3) The dark field detection method is more sensitive than the bright field detection method.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (10)
1. A dark field imaging inspection system, characterized in that the dark field imaging inspection system comprises:
a detection position is arranged in the vacuum chamber and used for placing an extreme ultraviolet mask;
the light source is arranged in the vacuum chamber and is used for emitting ultraviolet light beams to the extreme ultraviolet mask;
the optical assembly is arranged in the vacuum cavity and is used for receiving scattered light rays emitted by the extreme ultraviolet mask and forming an optical image by the scattered light rays;
an image capture device for capturing the optical image.
2. The dark field imaging detection system of claim 1, wherein the optical assembly includes a zone plate spaced above the euv mask for imaging.
3. The dark field imaging detection system of claim 2, wherein the optical assembly further comprises a light barrier for blocking reflected light rays through the extreme ultraviolet mask.
4. The dark field imaging detection system of claim 3, wherein the flag is disposed between the extreme ultraviolet mask and the zone plate and is configured to block the reflected light rays.
5. The dark field imaging detection system of claim 3, wherein the flag is disposed on the zone plate and configured to receive the reflected light.
6. The dark field imaging detection system of claim 2, wherein the zone plate is provided with light holes configured to allow light reflected from the euv mask to pass through.
7. The dark field imaging detection system of claim 6, further comprising a detector for detecting the reflected light passing through the light transmissive aperture.
8. The dark field imaging detection system of claim 2, wherein the optical assembly further comprises a reflector through which the extreme ultraviolet beam is reflected onto the extreme ultraviolet mask.
9. The dark field imaging detection system of claim 8, wherein the reflector is spaced above the zone plate, and an angle between an incident direction of the extreme ultraviolet beam on the reflector and a reflected direction of the extreme ultraviolet beam on the reflector is greater than 90 ° and less than 180 °;
or the reflecting pieces are arranged between the zone plate and the extreme ultraviolet mask at intervals, and the included angle between the incident direction of the extreme ultraviolet light beam on the reflecting piece and the reflecting direction of the extreme ultraviolet light beam on the reflecting piece is equal to 90 degrees.
10. The dark field imaging detection system of any one of claims 2 to 9, wherein the optical assembly further comprises a loading table having a first adjustment mechanism, the zone plate being disposed on the loading table, the first adjustment mechanism being for adjusting a degree of freedom of the loading table;
and/or the dark field imaging detection system further comprises a placing table with a second adjusting mechanism, the detection position is formed on the placing table, and the second adjusting mechanism is used for adjusting the degree of freedom of the placing table;
and/or the dark field imaging detection system further comprises an isolation assembly disposed outside the vacuum chamber, the isolation assembly comprising thermal insulation, acoustic insulation, and vibration isolation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110976103.1A CN113791076A (en) | 2021-08-24 | 2021-08-24 | Dark field imaging detection system |
Applications Claiming Priority (1)
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