CN113779650A - Micro-impact transient self-destruction chip for nonvolatile memory and self-destruction method thereof - Google Patents
Micro-impact transient self-destruction chip for nonvolatile memory and self-destruction method thereof Download PDFInfo
- Publication number
- CN113779650A CN113779650A CN202111087409.8A CN202111087409A CN113779650A CN 113779650 A CN113779650 A CN 113779650A CN 202111087409 A CN202111087409 A CN 202111087409A CN 113779650 A CN113779650 A CN 113779650A
- Authority
- CN
- China
- Prior art keywords
- self
- destruction
- chip
- micro
- module
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F21/00—Security arrangements for protecting computers, components thereof, programs or data against unauthorised activity
- G06F21/70—Protecting specific internal or peripheral components, in which the protection of a component leads to protection of the entire computer
- G06F21/78—Protecting specific internal or peripheral components, in which the protection of a component leads to protection of the entire computer to assure secure storage of data
Landscapes
- Engineering & Computer Science (AREA)
- Computer Security & Cryptography (AREA)
- Computer Hardware Design (AREA)
- Theoretical Computer Science (AREA)
- Software Systems (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
- Storage Device Security (AREA)
Abstract
The invention discloses a micro-impact transient self-destruction chip for a nonvolatile memory and a self-destruction method thereof, wherein the micro-impact transient self-destruction chip comprises a chip integrated frame and a self-destruction module arranged on the chip integrated frame; the chip integrated frame and the self-destruction module are provided with microchannels, and energetic medicaments are packaged in the microchannels in a set form; the self-destruction chip consists of an input end module and a plurality of self-destruction modules. The self-destruction module can be used independently, and integration of a plurality of modules can be carried out according to the difference of self-destruction areas. Aiming at the flat available space near the market electronic storage chip, the structure has stronger adaptability, more obvious advantages and convenient installation, only a small amount of screws or buckles are needed to fix the structure on the shell or the mainboard of the server, and when the storage chip is abandoned or not used for a long time, the self-destruction chip can be quickly transferred and installed on other storage chips needing to ensure data safety.
Description
Technical Field
The invention relates to the technical field of chip on-line self-destruction, in particular to a self-destruction method of a nonvolatile memory, which is used for realizing the transient self-destruction of a specific device or a component and can be applied to equipment such as a large-scale operation platform, a computer, a mobile phone or handheld storage and the like.
Background
With the development of society, especially the continuous and deep development of computer technology, information security is more and more concerned. The use and destruction of the memory chip for information storage becomes an important link for information security development.
Currently, there are two main types of storage medium destruction technologies, namely software destruction and hardware destruction. Software destruction is further classified into a data cleaning mechanism built in firmware of the flash memory device, a data destruction method using an encryption technique, and a data coverage method using garbage data for NAND by physical page. In addition to the hardware destruction by using large-scale equipment to carry out hammering, cutting, burning and the like on the removed memory, the hardware destruction also comprises a memory online destruction mode by using the effects of heavy-current burning, energetic material burning or explosion and the like. The method specifically comprises the following steps:
1. the reliability cannot be guaranteed when the data cleaning mechanism built in the firmware of the flash memory device is used for destroying. If the flash chip is read directly, bypassing the firmware, it can be seen that much of the data remains intact on the flash, although data destruction has been performed.
2. There are two main problems when data destruction is performed using encryption technology: the first is that Side Channel Attack (Side Channel attach) for flash memory chips may allow an attacker to recover keys and related data; secondly, the poor key management also brings serious security loopholes to the implementation of the data destruction method.
3. The destruction is performed by using a garbage data covering method, and if the destruction level of the data which can not be recovered at all is reached, the number of times of covering is more than 35, so that the destruction method consumes a long time and is also not beneficial to ensuring the safety of the data in the out-of-control memory.
4. Physical destruction such as hammering, cutting, burning and the like usually requires large equipment or sites, and when the storage in a normal working state has an abnormal condition and needs to be destroyed emergently, the destruction method is difficult to implement.
5. For the large current burning mode, there is a barrier on the energy and time of the key-destroying signal, and the technology is not complete. Moreover, the hardware self-destruction based on the large-current burning mode is high in implementation cost and long in period. In practical application, the storage medium architecture needs to be redesigned to match the energy and structure requirements of the self-destruction circuit. Therefore, the method based on large-current burning is difficult to adapt to the requirements of hardware self-destruction of various existing storage media.
In order to implement real-time and complete destruction of information stored in an electronic chip, document No. 201510184443.5 discloses a self-destruction microsystem for a nonvolatile memory chip and a self-destruction method thereof, which specifically include: when the memory chip is in a normal state, the micro safety protection unit short-circuits the micro energy conversion element to ensure that the micro energy conversion element does not fire; when the self-destruction decision chip judges that the system needs the self-destruction of the storage chip, a protection command is sent to the micro safety protection unit through the protection control end, the micro safety protection unit connected with the pair of ignition electrodes of the micro energy conversion element in parallel is disconnected for removing the protection, then the ignition control end sends an ignition signal to the micro energy conversion element, the micro energy conversion element generates heat to cause the energy-containing medicament in the packaging shell to be burnt and even to generate detonation, a large amount of heat is released in the reaction process, so that the irreparable physical damage is caused to the storage chip, and the irretrievable destruction of the information in the storage chip is realized; however, the patent only proposes concepts and methods for physical destruction of chips, and does not design specific devices for physical destruction of electronic chips.
The patent document of application No. 202020568056.8 discloses a micro-explosion device for electronic chip destruction, which comprises an upper shell, an initiating detonator, an initiating explosive chamber and a lower guard plate, wherein the lower part of the upper shell is provided with an open cavity body, two external ends of the cavity body are provided with fixed lugs, the initiating detonator is provided with 2 initiating signal wires which are led out from the side wall of the upper shell, the upper part of the initiating explosive chamber is filled with high-energy explosive, and the lower part of the initiating explosive chamber is filled with heat insulating substances; the lower guard plate is provided with an explosion directional window, an energy attenuation plate is arranged in the explosion directional window, and the energy attenuation plate is provided with a plurality of prefabricated fragments. The micro-explosion device has a complex structure, comprises a plurality of levels from top to bottom, and can obtain enough damage kinetic energy only by the prefabricated fragments in a certain acceleration space, so that the device has a certain thickness, and cannot be directly used when the reserved clearance of the storage chip accessories of the commercially available electronic products is small.
Therefore, it is an urgent need to solve the problems of improving the existing self-destruction microsystem or microdevice, realizing the chip design of the device, and establishing the self-destruction method based on the modularized chip.
Disclosure of Invention
In order to solve the defects in the prior art, the invention provides a micro-impact transient self-destruction chip for a nonvolatile memory and a self-destruction method thereof, wherein the micro-impact transient self-destruction chip is used for realizing online transient destruction of a nonvolatile memory device or a chip by utilizing micro detonation of an energetic medicament under a controlled condition, and has the advantages of controllable power, quick response and more thorough data destruction.
The purpose of the invention is realized as follows:
a micro-impact transient self-destruction chip for a nonvolatile memory comprises a chip integrated frame 6, a self-destruction module arranged on the chip integrated frame 6; the chip integrated frame 6 and the self-destruction module are provided with microchannels, and energetic medicaments are packaged in the microchannels in a set form; the self-destruction chip consists of an input end module 10 and a plurality of self-destruction modules,
the input end module and the plurality of self-destruction modules are directly embedded into the integrated frame 6 in a preset mode through designing standardized flush interfaces; the self-destruction module comprises a first self-destruction module 1, a second self-destruction module 2, a third self-destruction module 3, a fourth self-destruction module 4 and a fifth self-destruction module 5;
the interface of the self-destruction chip, which connects each module outwards, is concave-convex, and the mutual coupling of the concave-convex interfaces is utilized to realize the splicing mode without the integrated frame;
the main functional component of the self-destruction chip is a self-destruction module which is designed into a round, square or other self-destruction module with any shape according to the shape of a required self-destruction area, and the energy output can be realized by linear microchannel charge or a micropore array;
the square self-destruction module comprises a self-destruction module substrate made of metal or nonmetal and a self-destruction charging micro-channel arranged on the self-destruction module substrate; the type and the dosage of the medicament filled in the self-destruction charging micro-channel, the section structure of the channel, the distance between the channel and the damage target surface are designed according to the size of the damage area and the vulnerability of the damage target, the number and the arrangement mode of the micro-channel are also related to the size and the structural vulnerability of the target area, and the filling process comprises the working procedures of precise press mounting, extrusion, isostatic pressing and in-situ charging;
each self-destruction module is provided with one or more detonation input charge channels, and the specific number is determined according to the structural size of the micro-channel and the critical size of the medicament; the channel is also communicated with the self-destruction charging micro-channel and is communicated in a two-layer interaction or same-layer immersion type lap joint mode; the specific communication mode can be determined according to the design thickness of the chip.
The self-destruction method of the micro-impact transient self-destruction chip for the nonvolatile memory comprises the following steps: energy-containing medicaments are packaged in the micro-channel of the self-destruction module and the integrated frame in a set form, when the storage chip is in a normal state, the external excitation element does not input a shock wave signal, and the energy-containing medicaments in the self-destruction chip cannot be excited; when the memory external identification system judges that self-destruction needs to be implemented, the external excitation element releases flame, shock waves or excitation energy in other forms to the self-destruction chip, excites energetic medicaments in the chip to generate violent self-sustaining reaction, releases high-energy impact accompanied with high temperature, high pressure and plasma to a nearby memory chip or device, and forms transient and multidimensional irreversible physical damage to key devices including the memory chip;
the energy-containing medicament is used for transmitting combustion or detonation energy, comprises at least one medicament taking HMX (HMX), RDX (hexogen) or HNS (hexanitrostilbene) as a main body, is responsible for receiving shock wave energy released by an excitation source, is filled by adopting a powder pressing or pouring mode, forms a high-energy microflow field in a micro pipeline or a micropore, carries out gridding cutting and physical damage of a key area on a memory chip, and simultaneously carries out interference or damage on charges in a data storage unit by plasma dissociated under the conditions of high temperature and high pressure to form soft damage on stored data.
Has the positive and beneficial effects that: the self-destruction module can be used independently, and integration of a plurality of modules can be carried out according to the difference of self-destruction areas. Aiming at the flat available space near the market electronic storage chip, the structure has stronger adaptability, more obvious advantages and convenient installation, only a small amount of screws or buckles are needed to fix the structure on the shell or the mainboard of the server, and when the storage chip is abandoned or not used for a long time, the self-destruction chip can be quickly transferred and installed on other storage chips needing to ensure data safety.
Drawings
FIG. 1 is a first diagram of the integrated effect structure of the self-destruct chip of the present invention;
FIG. 2 is a second structure diagram of the integrated effect of the self-destruct chip of the present invention;
FIG. 3 is a third diagram of the integrated effect structure of the self-destruct chip of the present invention;
FIG. 4 is a structural diagram of the integrated effect of the self-destruct chip of the present invention;
FIG. 5 is a schematic structural diagram of a self-destruction module according to the present invention;
FIG. 6 shows the overlapping of the shock wave input channel and the self-destruction micro-channel;
FIG. 7 is a schematic diagram of an energy-containing microchannel array structure on a self-destruction module;
FIG. 8 is a diagram showing the effect of the self-destruction module surface charge object;
fig. 9 is a first diagram illustrating an integrated test effect of the flush interface self-destruct module according to embodiment 1 of the present invention;
fig. 10 is a second diagram illustrating the effect of the integration test of the flush interface self-destruct module in embodiment 1 of the present invention;
FIG. 11 is a diagram illustrating the damage effect of the memory data chip of embodiment 1.
In the figure, the following steps are carried out: the self-destruction type explosive-filling device comprises a first self-destruction module 1, a second self-destruction module 2, a third self-destruction module 3, a fourth self-destruction module 4, a fifth self-destruction module 5, an integrated frame 6, a self-destruction module substrate 7, a self-destruction explosive-filling micro-channel 8, a detonation input explosive-filling structure 9 and an input end module 10.
Detailed Description
The invention will be further described with reference to the following drawings and detailed description:
example 1
As shown in fig. 1, a micro-impact transient self-destruction chip for a non-volatile memory includes a chip-integrated frame 6, a self-destruction module disposed on the chip-integrated frame 6; the chip integrated frame 6 and the self-destruction module are provided with microchannels, and energetic medicaments are packaged in the microchannels in a set form; the self-destruction chip consists of an input end module and a plurality of self-destruction modules, wherein the input end module and the self-destruction modules are embedded into the integrated frame 6 in a preset mode through designing standardized flush interfaces; the self-destruction module comprises a first self-destruction module 1, a second self-destruction module 2, a third self-destruction module 3, a fourth self-destruction module 4 and a fifth self-destruction module 5.
Wherein, "" represents a detonation input module, 1.2.3.4.5 represents a self-destruction module, and 6 represents an integrated frame. The structure has the advantages that: 1) the external parts of all the modules are in a standard flat contact mode, and the positions of the detonation input module and the self-destruction module can be randomly adjusted according to design requirements; 2) the self-destruction area covering the integrated frame can be spliced by freely combining a few modules, so that the method is convenient and quick; 2) the channel for transmitting detonation energy outwards from the input module is not unique, each self-destruction module is provided with two channels which are connected outwards, the redundant design is adopted, and the failure rate of the self-destruction module and the self-destruction chip is almost zero.
Example 2
As shown in fig. 3, a micro-impact transient self-destruction chip for a non-volatile memory includes a chip-integrated frame 6, a self-destruction module disposed on the chip-integrated frame 6; the chip integrated frame 6 and the self-destruction module are provided with microchannels, and energetic medicaments are packaged in the microchannels in a set form; the self-destruction chip is composed of an input end module and a plurality of self-destruction modules, the design idea of jigsaw is used for reference, the interface of each module which is communicated outwards is designed into a concave-convex shape, and the splicing mode without an integrated frame is realized by utilizing the mutual coupling of the concave-convex interfaces. The scheme has the characteristics that: 1) compared with the flat connection mode, the self-destruction module has a relatively complex appearance; 2) the input module can be designed at any position of the center or the periphery of the self-destruction chip according to the requirement;
example 3
A micro-impact transient self-destruction chip for a nonvolatile memory does not need an integrated frame, and the shape of a covered self-destruction area is more flexible and changeable and is not limited by the integrated frame.
Example 4
As shown in fig. 5, the main function of the self-destruction chip is constructed as a self-destruction module, the shape of which is designed as a round self-destruction module or a square self-destruction module according to the shape of the required self-destruction area, and the energy output can be realized by linear microchannel charge or micropore array;
the square self-destruction module comprises a self-destruction module substrate 7 made of metal or nonmetal and a self-destruction charging micro-channel 8 arranged on the self-destruction module substrate; the type and the dosage of the medicament filled in the self-destruction medicament-filling micro-channel, the cross section structure of the channel and the distance between the channel and the damage target surface are designed according to the size of the damage area and the vulnerability of the damage target, and the number and the arrangement mode of the micro-channel are also related to the size and the structural vulnerability of the target area;
the energy utilization rate of the energetic medicament in the microchannel is provided as much as possible while the thorough destruction of the target is ensured, and the collateral damage to structures or personnel outside the damaged target is reduced; the detonation input charge structure 9 is connected with the electric excitation element, one or more detonation input charge channels can be arranged in one self-destruction module, and the specific number is determined according to the structural size of the micro-channel and the critical size of the medicament; the detonation input charge channel is also communicated with the self-destruction charge microchannel, and can be communicated in a two-layer interaction or same-layer immersion type overlapping mode, as shown in fig. 6, and the specific communication mode can be determined according to the design thickness of the chip.
Example 5
In order to further improve the energy utilization rate of the self-destruction channel, besides the optimized design of the cross section structure, the micro-hole array can be arranged on the destruction target surface, the micro-holes are communicated with the self-destruction micro-channel inside the substrate, the external surface of the self-destruction channel is directly connected with the memory chip to be destroyed, the self-destruction micro-channel can perform grid cutting on the memory chip, and meanwhile, fixed-point accurate destruction can be performed, so that the efficiency of chip destruction is further improved, for example, the upper surface micro-hole array shown in fig. 7. The energy-containing micro-channel can also be directly arranged on the surface of the substrate, the surface filling is implemented through a precise press-fitting or extrusion-injection process, and packaging materials such as acrylic varnish and the like are sprayed after the powder is filled, so that the moisture resistance and the corrosion resistance are realized. When the self-destruction type memory chip is used, the powder charging surface is tightly attached to the memory chip to be destroyed, the self-destruction chip is fixed on the inner surface of the memory shell through screws or buckles, and the structures and the layout of the self-destruction module and the micro-channel can be designed randomly.
Example 6
As shown in the figures 9 and 10, the self-destruction module respectively comprises 3 self-destruction modules with the shapes of 30mmX25mm X3 mm, the energy-containing circuits are dispersed according to sixty degrees, the charge linear density is 0.6mg/mm, the 3 modules are freely placed in sequence, any circuit is connected with the circuits of other modules, and the outside is jacked by tools. An electric initiating explosive device is vertically arranged at the central point of the module 1 shown in the attached figure 9, after the electric initiating explosive device is electrified and ignited, energetic chemical agents in the channels are detonated and spread to the periphery, all six channels of the module 1 successfully transmit detonation signals, and the surface of the module 1 becomes rough due to the bombardment of initiating explosive device shells and other detonation micro-particles. The module 2 introduces detonation signals from the right line of the module 1, realizes self micro-detonation, transmits the detonation signals through the energetic channel connected with the module 3, and then the module 3 also realizes full-channel micro-detonation. From preliminary test results, it can be seen that the micro-detonation self-destruction module has good integratable performance, if the concave-convex type bayonet is arranged at the edge of the module, the assembly between the modules is tighter, and the micro-detonation transfer effect is better. By adopting the modularized self-destruction chip, the self-destruction effect test is carried out on the data chip of a certain memory, and the self-destruction system releases the micro-detonation energy after being excited, so that the memory chip destruction effect as shown in fig. 11 is formed.
The self-destruction module can be used independently, and integration of a plurality of modules can be carried out according to the difference of self-destruction areas. Aiming at the flat available space near the market electronic storage chip, the structure has stronger adaptability and convenient installation, only a small amount of screws or buckles are needed to fix the structure on the shell or the mainboard of the server, and when the storage chip is abandoned or not used for a long time, the self-destruction chip can be quickly transferred and installed on other storage chips needing to ensure data safety.
The above is only a preferred embodiment of the invention and is not intended to limit the invention, and various modifications and changes may be made to the invention by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the invention should be included in the protection scope of the invention.
Claims (8)
1. A micro-impact transient self-destruction chip for a nonvolatile memory comprises a chip integration frame, and is characterized in that: the self-destruction module is arranged on the chip integrated frame; the chip integrated frame and the self-destruction module are provided with microchannels, and energetic medicaments are packaged in the microchannels in a set form; the self-destruction chip consists of an input end module and a plurality of self-destruction modules.
2. A micro-impact transient self-destruction chip for non-volatile memories according to claim 1, characterized in that: the input end module and the plurality of self-destruction modules are embedded into the integrated frame in a preset mode through designing standardized flush interfaces; the self-destruction module comprises but is not limited to a first self-destruction module, a second self-destruction module, a third self-destruction module, a fourth self-destruction module and a fifth self-destruction module.
3. A micro-impact transient self-destruction chip for non-volatile memories according to claim 1, characterized in that: the interface of the self-destruction chip, which communicates each module outwards, is concave-convex, and the mutual coupling of the concave-convex interfaces is utilized to realize the splicing mode without the integrated frame.
4. A micro-impact transient self-destruction chip for non-volatile memories according to claim 1, characterized in that: the main function of the self-destruction chip is constructed as a self-destruction module, the shape of the self-destruction chip is designed into a round self-destruction module or a square self-destruction module according to the shape of a required self-destruction area, and energy output can be realized through linear microchannel charge or a micropore array.
5. A micro-impact transient self-destruction chip for non-volatile memories according to claim 1, characterized in that: the square self-destruction module comprises a self-destruction module substrate made of metal or nonmetal and a self-destruction charging micro-channel arranged on the self-destruction module substrate; the type and the dosage of the medicament filled in the self-destruction charging micro-channel, the section structure of the channel, and the distance between the channel and the damage target surface are designed according to the size of the damage area and the vulnerability of the damage target, the number and the arrangement mode of the micro-channel are also related to the size and the structural vulnerability of the target area, and the filling process comprises the procedures of precise press mounting, extrusion, isostatic pressing and in-situ charging.
6. A micro-impact transient self-destruction chip for non-volatile memories according to claim 5, characterized in that: each self-destruction module is provided with one or more detonation input charge channels, and the specific number is determined according to the structural size of the micro-channel and the critical size of the medicament; the channel is also communicated with the self-destruction charging micro-channel and is communicated in a lap joint mode including two-layer interaction or same-layer immersion; the specific communication mode can be determined according to the design thickness of the chip.
7. A self-destruction method of a micro-impact transient self-destruction chip for a non-volatile memory according to any one of claims 1 to 6, characterized in that: energy-containing medicaments are packaged in the micro-channel of the self-destruction module and the integrated frame in a set form, when the storage chip is in a normal state, the external excitation element does not input a shock wave signal, and the energy-containing medicaments in the self-destruction chip cannot be excited; when the external identification system of the memory judges that self-destruction needs to be implemented, the external excitation element releases flame, shock waves or other excitation energy to the self-destruction chip, excites energetic medicaments in the chip to generate violent self-sustaining reaction, releases high-energy impact accompanied with high temperature, high pressure and plasma to a nearby memory chip or device, and forms transient and multidimensional irreversible physical damage to key devices including the memory chip.
8. The self-destruction method of the micro-impact transient self-destruction chip for the non-volatile memory according to claim 7, wherein: the energy-containing medicament is used for transmitting combustion or detonation energy, comprises at least one medicament taking HMX (HMX), RDX (hexogen) or HNS (hexanitrostilbene) as a main body, is used for receiving energy including shock waves released by an excitation source, is filled in a mode including powder precise press-fitting, extrusion or pouring, forms a high-energy micro flow field in a micro pipeline or a micro hole, carries out gridding cutting and physical damage of key areas on a memory chip, and simultaneously carries out interference or damage on charges in a data storage unit by plasma dissociated under the conditions of high temperature and high pressure so as to form soft damage on stored data.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111087409.8A CN113779650B (en) | 2021-09-16 | 2021-09-16 | Micro-impact transient self-destruction chip for nonvolatile memory and self-destruction method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111087409.8A CN113779650B (en) | 2021-09-16 | 2021-09-16 | Micro-impact transient self-destruction chip for nonvolatile memory and self-destruction method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113779650A true CN113779650A (en) | 2021-12-10 |
| CN113779650B CN113779650B (en) | 2023-08-22 |
Family
ID=78851433
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111087409.8A Active CN113779650B (en) | 2021-09-16 | 2021-09-16 | Micro-impact transient self-destruction chip for nonvolatile memory and self-destruction method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113779650B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115048680A (en) * | 2022-07-04 | 2022-09-13 | 常州市武进红光无线电有限公司 | Chip self-destruction execution system, method and storage medium |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104785503A (en) * | 2015-04-20 | 2015-07-22 | 刘鹏 | Self-destruction micro system for self-destruction of nonvolatile memory chip and self-destruction method of self-destruction micro system |
| CN104815833A (en) * | 2015-04-17 | 2015-08-05 | 娄文忠 | Self-destruction microsystem of nonvolatile storage chip and self-destruction method thereof |
| CN104867885A (en) * | 2015-04-17 | 2015-08-26 | 丁旭冉 | Self-destruct nonvolatile memory chip and preparation method thereof |
| CN106933125A (en) * | 2015-12-31 | 2017-07-07 | 娄文忠 | The system and its self-destruction method of intelligent beehive-shaped charge self-destruction are realized based on wireless networking |
| WO2019223175A1 (en) * | 2018-05-25 | 2019-11-28 | 山东大学 | Non-volatile memory-based data self-destruction method and system |
-
2021
- 2021-09-16 CN CN202111087409.8A patent/CN113779650B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104815833A (en) * | 2015-04-17 | 2015-08-05 | 娄文忠 | Self-destruction microsystem of nonvolatile storage chip and self-destruction method thereof |
| CN104867885A (en) * | 2015-04-17 | 2015-08-26 | 丁旭冉 | Self-destruct nonvolatile memory chip and preparation method thereof |
| CN104785503A (en) * | 2015-04-20 | 2015-07-22 | 刘鹏 | Self-destruction micro system for self-destruction of nonvolatile memory chip and self-destruction method of self-destruction micro system |
| CN106933125A (en) * | 2015-12-31 | 2017-07-07 | 娄文忠 | The system and its self-destruction method of intelligent beehive-shaped charge self-destruction are realized based on wireless networking |
| WO2019223175A1 (en) * | 2018-05-25 | 2019-11-28 | 山东大学 | Non-volatile memory-based data self-destruction method and system |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115048680A (en) * | 2022-07-04 | 2022-09-13 | 常州市武进红光无线电有限公司 | Chip self-destruction execution system, method and storage medium |
| CN115048680B (en) * | 2022-07-04 | 2023-11-03 | 常州市红光电能科技股份有限公司 | Chip self-destruction executing system, method and storage medium |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113779650B (en) | 2023-08-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| RU2295694C2 (en) | Combined detonators for use with blasting devices | |
| CN112004988A (en) | Fluid disabled detonator and using method | |
| JPS58204894A (en) | Electric ignition detonator device | |
| CN113779650A (en) | Micro-impact transient self-destruction chip for nonvolatile memory and self-destruction method thereof | |
| CN111389876A (en) | Micro-explosion device for destroying electronic chip | |
| EP3130881A1 (en) | Integrated barrel/bridge subassembly for an exploding foil initiator (efi) | |
| US8281718B2 (en) | Explosive foil initiator and method of making | |
| CN111367835A (en) | Self-destruction device of memory chip and working method thereof | |
| CN109489507A (en) | Self-desttruction equipment based on in-line arrangement fuse | |
| CN212458148U (en) | One-rotation multi-explosion transfer connecting device | |
| CN211577878U (en) | Self-destruction device for memory chip | |
| US7191706B2 (en) | Optically triggered fire set/detonator system | |
| CN108871132B (en) | Explosion self-destruction device for cylinder test | |
| CN215984232U (en) | Physical self-destruction device of missile-borne circuit | |
| CN202974081U (en) | Priming-explosive-free digital safety detonator | |
| CN111174652B (en) | Detonation resistor and blasting device | |
| CN113819817A (en) | Physical self-destruction device of missile-borne circuit | |
| ES2943666T3 (en) | Methods to improve the uniformity and efficiency of the explosion in explosive foil detonators | |
| CN113819817B (en) | Physical self-destruction device of missile-borne circuit | |
| CN115084773A (en) | Battery module, battery pack and blasting collection device thereof | |
| CN210400203U (en) | Anti-seismic electronic digital detonator ignition device | |
| Xu et al. | Numerical Analysis on Acceleration Process and Shock Initiation of Parylene C− Cu Flyer in Exploding Foil Initiator | |
| US8268668B1 (en) | Destructor integrated circuit chip, interposer electronic device and methods | |
| USH2025H1 (en) | Serial output warhead | |
| KR20210112929A (en) | Non-electric detonator deck charge blasting method with expanding free face |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |