CN113777886A - 陶瓷基板图形化方法 - Google Patents
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Abstract
本发明涉及一种陶瓷基板图形化方法,包括:A、基板表面处理,去除陶瓷基板表面的油污和杂质后,进行酸性微蚀,增加基板表面粗糙度;B、旋转匀胶,滴少量的光刻胶到基板表面,采用2000~2500rpm/5s速度动态布胶,主转速为3000~4000rpm/40s,并采用4000~4500rpm/10s速度甩边缘液滴;C、软烘,在115±1℃条件下烘干100~150s,去除多余溶液;D、第一面曝光,将第一面向上光刻曝光,曝光图案中设置对位MarK点;光刻时,采用接触式或接近式曝光,光刻能量10‑50mW/cm2,光刻时间1‑20s,提高曝光精度;E、第二面对位曝光,将第二面向上光刻曝光,CCD相机通过承片台开槽识别第一面对位Mark点,对第二面进行对位曝光并进行光刻,开槽的宽度为曝光mark点的1.5‑3倍;F、显影及硬烘。
Description
技术领域
本发明属于陶瓷基板制备技术领域,具体涉及一种陶瓷基板图形化方法。
背景技术
陶瓷基板具有高导热、高电绝缘、高机械强度、低膨胀等特性,主要应用于半导体致冷器、光通信模块及LED散热基板及太阳能电池组件等。
随着5G光通信模块的发展,对陶瓷基板的线路精细度要求越来越高,从微米级向亚微米级发展,对于图形化工艺提出了更高的要求。传统进行陶瓷基板图形化方法过程中,双面曝光机采用打孔定位或者上下菲林mark点对位的方式,正反对位精度和曝光精度在50μm左右,难以达到几微米的精度要求。
为了提高精度,使用光刻机替代曝光机,可以将图形单面曝光精度提高到几微米甚至是亚微米,但正反对位精度无法控制,正反错位问题仍无法解决。
发明内容
本发明是为解决上述技术问题进行的,针对当前陶瓷基板图形化流程过程中线路精细度不高的问题,尤其正反对位精度和曝光精度不高的问题进行改进,提供了一种陶瓷基板图形化方法。
针对上述问题,本发明采用改良后半导体光刻机实现对准及曝光精度改进,并结合其他图形化步骤改进,实现无需打孔定位,光刻后的图形精度和位置精度达到亚微米级。
为了实现上述目的,本发明所采用的技术方案如下:
本发明提供的陶瓷基板图形化方法,采用加装了CCD相机的半自动光刻机进行,CCD相机安装在承片台下方,包括如下步骤:
A、基板表面处理
去除陶瓷基板表面的油污和杂质后,进行酸性微蚀,增加基板表面粗糙度;
B、旋转匀胶
先滴少量的光刻胶到基板表面,采用2000~2500rpm/5s速度动态布胶,主转速为3000~4000rpm/40s,并采用4000~4500rpm/10s速度甩边缘液滴;
C、软烘
在115±1℃条件下烘干100~150s,去除多余溶液;
D、第一面曝光
将第一面向上光刻曝光,曝光图案中设置对位MarK点;光刻时,采用接触式或接近式曝光,光刻能量10-50mW/cm2,光刻时间1-20s,提高曝光精度;
E、第二面对位曝光
将第二面向上光刻曝光,CCD相机通过承片台开槽识别第一面对位Mark点,对第二面进行对位曝光并进行光刻,开槽的宽度为曝光mark点的1.5-3倍。
F、显影及硬烘
所用显影液为0.5~1.5%Na2CO3,硬烘条件为100~115℃烘干30S。
本发明中,陶瓷基板的金属面为铜面或铝面,均可实现光刻后的图形精度和位置精度达到亚微米级。
优选的,步骤A中,通过除油剂或者抛刷研磨去除陶瓷基板表面的油污和杂质;
酸性微蚀的处理步骤如下:采用1%-4%硫酸、20-80g/L过硫酸钠微蚀铜面,增加铜面粗糙度。经过该处理,铜面或铝面的粗糙度Ra达到0.2~0.6μm,便于后续旋转匀胶步骤中,增强光刻胶与基板表面间的结合力。
步骤B中,进行旋转匀胶时,采用2000rpm/5s速度动态布胶,主转速为3000rpm/40s,并采用4000rpm/10s速度甩边缘液滴。
步骤D中,对位MarK点至少包括两个对应位置的MarK点,所述MarK点通过菲林设计实现。
步骤D和E中,进行光刻时,光刻距离为0~200μm。
本发明的有益效果如下:
本发明利用CCD相机的高识别特性并结合承片台开槽,实现MarK点捕获以及正反面Mark点对应,实现正反对位精度控制;与此同时,通过预处理以及光刻条件改进实现线路精度改善,精度达到1μm或亚微米级。
此外,本发明使用曝光图形提供MarK点,取代传统的物理方法如打孔制备Mark点,能显著提高正反面图形对位精度。
附图说明
图1为本发明陶瓷基板图形化方法的流程图。
具体实施方式
下面结合本发明实施例对本发明的实施作详细说明,以下实施例是在以本发明技术方案为前提下进行实施,给出了详细的实施方式和具体操作过程,但本发明的保护范围不限于下述的实施例。
根据图1,本发明提供的陶瓷基板图形化方法,采用加装了CCD相机的半自动光刻机进行,CCD相机安装在承片台下方,包括如下步骤:
A、基板表面处理
去除陶瓷基板表面的油污和杂质后,进行酸性微蚀,增加基板表面粗糙度:
通过除油剂或者抛刷研磨去除陶瓷基板表面的油污和杂质;而后采用1%-4%硫酸、20-80g/L过硫酸钠微蚀基板表面的铜面或铝面,增加表面粗糙度至0.2~0.6μm,便于后续旋转匀胶步骤中,增强光刻胶与基板表面间的结合力。
B、旋转匀胶
先滴少量的光刻胶到基板表面,采用2000~2500rpm/5s(优选2000rpm/5s)速度动态布胶,主转速为3000~4000rpm/40s(优选3000rpm/40s),并采用4000~4500rpm/10s(优选4000rpm/10s)速度甩边缘液滴。
C、软烘
在115±1℃条件下烘干100~150s,去除胶溶液中多余溶液;
D、第一面曝光
将第一面向上光刻曝光,曝光图案中设置对位MarK点;光刻时,采用光刻距离为0~200μm接触式或接近式曝光,光刻能量10-50mW/cm2,光刻时间1-20s,提高曝光精度;
E、第二面对位曝光
将第二面向上光刻曝光,CCD相机通过承片台开槽识别第一面对位Mark点,通过软件自动实现第二面进行对位曝光并进行光刻。
本步骤中,承片台具有真空吸附功能,实现陶瓷基板的固定;开槽的宽度为曝光mark点的1.5-3倍,既实现Mark点图像捕获,又不影响承片台强度。
F、显影及硬烘
所用显影液为0.5~1.5%Na2CO3,硬烘条件为100~115℃烘干30S。
本实施例中,陶瓷基板的金属面为铜面或铝面,均可实现光刻后的图形精度和位置精度达到亚微米级。
本发明光刻机在可真空吸附的承片台下方加装了自动对位的CCD,通过软件实现自动对位,并在CCD活动范围的承片台上开槽,使CCD能透过承片台看到基板上的mark点。通过CCD相机的高识别特性并结合承片台开槽,实现MarK点捕获以及正反面Mark点对应,实现正反对位精度控制;与此同时,通过预处理以及光刻条件改进实现线路精度改善,精度达到1μm或亚微米级,满足陶瓷基板的线路精细度要求。
以上已对本发明创造的较佳实施例进行了具体说明,但本发明创造并不限于所述实施例,熟悉本领域的技术人员在不违背本发明创造精神的前提下还可作出种种的等同的变型或替换,这些等同的变型或替换均包含在本申请权利要求所限定的范围内。
Claims (8)
1.一种陶瓷基板图形化方法,其特征在于,采用加装了CCD相机的半自动光刻机进行,所述CCD相机安装在承片台下方,包括如下步骤:
A、基板表面处理
去除陶瓷基板表面的油污和杂质后,进行酸性微蚀,增加基板表面粗糙度;
B、旋转匀胶
先滴少量的光刻胶到基板表面,采用2000~2500rpm/5s速度动态布胶,主转速为3000~4000rpm/40s,并采用4000~4500rpm/10s速度甩边缘液滴;
C、软烘
在115±1℃条件下烘干100~150s;
D、第一面曝光
将第一面向上光刻曝光,曝光图案中设置对位MarK点;光刻时,采用接触式或接近式曝光,光刻能量10-50mW/cm2,光刻时间1-20s;
E、第二面对位曝光
将第二面向上光刻曝光,所述CCD相机通过承片台开槽识别第一面对位Mark点,对第二面进行对位曝光并进行光刻,所述开槽的宽度为曝光mark点的1.5-3倍。
2.根据权利要求1所述的陶瓷基板图形化方法,其特征在于,还包括F显影及硬烘步骤,所用显影液为0.5~1.5%Na2CO3,硬烘条件为100~115℃烘干30S。
3.根据权利要求1所述的陶瓷基板图形化方法,其特征在于:
其中,步骤A中,通过除油剂或者抛刷研磨去除陶瓷基板表面的油污和杂质;
酸性微蚀的处理步骤如下:采用1%-4%硫酸、20-80g/L过硫酸钠微蚀铜面,增加铜面粗糙度。
4.根据权利要求3所述的陶瓷基板图形化方法,其特征在于:
其中,所述基板表面粗糙度Ra为0.2~0.6μm。
5.根据权利要求3所述的陶瓷基板图形化方法,其特征在于:
其中,步骤B中,进行旋转匀胶时,采用2000rpm/5s速度动态布胶,主转速为3000rpm/40s,并采用4000rpm/10s速度甩边缘液滴。
6.根据权利要求1所述的陶瓷基板图形化方法,其特征在于:
其中,步骤D中,所述对位MarK点至少包括两个对应位置的MarK点,所述MarK点通过菲林设计实现。
7.根据权利要求5所述的陶瓷基板图形化方法,其特征在于:
其中,步骤D和E中,进行光刻时,光刻距离为0~200μm。
8.根据权利要求1所述的陶瓷基板图形化方法,其特征在于:
其中,所述的陶瓷基板的金属面为铜面或铝面。
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