CN113770100A - Semiconductor part cleaning process - Google Patents
Semiconductor part cleaning process Download PDFInfo
- Publication number
- CN113770100A CN113770100A CN202010680989.0A CN202010680989A CN113770100A CN 113770100 A CN113770100 A CN 113770100A CN 202010680989 A CN202010680989 A CN 202010680989A CN 113770100 A CN113770100 A CN 113770100A
- Authority
- CN
- China
- Prior art keywords
- parts
- cleaning
- semiconductor
- ultrasonic
- cleaned
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 55
- 238000004140 cleaning Methods 0.000 title claims abstract description 45
- 238000000034 method Methods 0.000 title claims abstract description 22
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 39
- 239000012459 cleaning agent Substances 0.000 claims abstract description 19
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000002253 acid Substances 0.000 claims abstract description 18
- 238000005530 etching Methods 0.000 claims abstract description 18
- 238000005406 washing Methods 0.000 claims abstract description 15
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 9
- 238000009210 therapy by ultrasound Methods 0.000 claims abstract description 9
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 24
- FVAUCKIRQBBSSJ-UHFFFAOYSA-M sodium iodide Chemical compound [Na+].[I-] FVAUCKIRQBBSSJ-UHFFFAOYSA-M 0.000 claims description 24
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 16
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 16
- SUAKHGWARZSWIH-UHFFFAOYSA-N N,N‐diethylformamide Chemical compound CCN(CC)C=O SUAKHGWARZSWIH-UHFFFAOYSA-N 0.000 claims description 8
- 239000004115 Sodium Silicate Substances 0.000 claims description 8
- 238000001035 drying Methods 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 8
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 8
- 235000009518 sodium iodide Nutrition 0.000 claims description 8
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 claims description 8
- 229910052911 sodium silicate Inorganic materials 0.000 claims description 8
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 claims description 8
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 claims description 8
- 238000007664 blowing Methods 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 4
- 239000000428 dust Substances 0.000 abstract description 3
- 229910021645 metal ion Inorganic materials 0.000 abstract description 3
- 239000002245 particle Substances 0.000 abstract description 3
- 230000005611 electricity Effects 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/39—Organic or inorganic per-compounds
- C11D3/3942—Inorganic per-compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/39—Organic or inorganic per-compounds
- C11D3/3947—Liquid compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/06—Hydroxides
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/10—Salts
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/10—Salts
- C11D7/14—Silicates
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3263—Amides or imides
-
- C11D2111/22—
Abstract
The invention discloses a cleaning process for semiconductor parts, which comprises the following steps: A. firstly, putting the semiconductor parts into warm water and washing the semiconductor parts for 20-30 min by water flow; B. then placing the semiconductor parts into a cleaning machine, adding a cleaning agent, and cleaning by adopting ultrasonic for 30-50 min; C. then, putting the cleaned parts into cold water for washing for 30-40 min; D. adding hydrofluoric acid with the concentration of 3% and nitric acid with the concentration of 20% into the semiconductor parts cleaned by cold water for carrying out acid etching treatment for 4-8 min; E. finally, placing the parts subjected to the acid etching treatment into an ultrasonic machine for secondary ultrasonic treatment; F. the cleaning process adopted by the invention is simple to operate and good in cleaning effect, can effectively remove dust particles, metal ions, oil stains and dirt, and ensures the performance of the semiconductor parts.
Description
Technical Field
The invention relates to the technical field of semiconductor part cleaning, in particular to a semiconductor part cleaning process.
Background
The semiconductor is a substance with conductivity between an insulator and a conductor, the conductivity of the semiconductor is easy to control, and the semiconductor can be used as an element material for information processing; semiconductors are very important from the viewpoint of technological or economic development.
After the semiconductor parts are processed, the semiconductor parts need to be cleaned, and the cleaning efficiency of the current cleaning process is low, and the cleaning effect is poor, so that improvement is needed.
Disclosure of Invention
The present invention is directed to a semiconductor component cleaning process to solve the above problems.
In order to achieve the purpose, the invention provides the following technical scheme: a cleaning process for semiconductor parts comprises the following steps:
A. firstly, putting the semiconductor parts into warm water and washing the semiconductor parts for 20-30 min by water flow;
B. then placing the semiconductor parts into a cleaning machine, adding a cleaning agent, and cleaning by adopting ultrasonic for 30-50 min;
C. then, putting the cleaned parts into cold water for washing for 30-40 min;
D. adding hydrofluoric acid with the concentration of 3% and nitric acid with the concentration of 20% into the semiconductor parts cleaned by cold water for carrying out acid etching treatment for 4-8 min;
E. finally, placing the parts subjected to the acid etching treatment into an ultrasonic machine for secondary ultrasonic treatment;
F. and (5) drying the cleaned parts in a nitrogen atmosphere.
Preferably, the cleaning agent in the step B comprises 20-30 parts by weight of sodium iodide, 10-20 parts by weight of potassium hydroxide, 4-10 parts by weight of N, N-diethylformamide, 5-15 parts by weight of hydrogen peroxide, 3-9 parts by weight of sodium silicate and 4-12 parts by weight of tetraethylammonium hydroxide.
Preferably, the ultrasonic power in the step B is 800-.
Preferably, the ultrasonic power in the step E is 1200-1400W.
Preferably, the blowing flow rate of the nitrogen in the step F is 30-40L/min.
Compared with the prior art, the invention has the beneficial effects that: the cleaning process adopted by the invention is simple to operate and good in cleaning effect, and can effectively remove dust particles, metal ions, oil stains and dirt and ensure the performance of semiconductor parts; the cleaning agent adopted by the invention is environment-friendly, pollution-free, easy to wash and residue-free, and can effectively remove static electricity on the surface of the semiconductor part.
Detailed Description
The technical solutions in the embodiments of the present invention are clearly and completely described below, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The first embodiment is as follows:
the invention provides the following technical scheme: a cleaning process for semiconductor parts comprises the following steps:
A. firstly, putting semiconductor parts into warm water and washing with water flow for 20 min;
B. then placing the semiconductor parts into a cleaning machine, adding a cleaning agent, and cleaning by adopting ultrasonic for 30 min;
C. then, putting the cleaned parts into cold water for washing for 30 min;
D. adding hydrofluoric acid with concentration of 3% and nitric acid with concentration of 20% into the semiconductor parts cleaned with cold water for acid etching treatment for 4 min;
E. finally, placing the parts subjected to the acid etching treatment into an ultrasonic machine for secondary ultrasonic treatment;
F. and (5) drying the cleaned parts in a nitrogen atmosphere.
In this embodiment, the components of the cleaning agent in step B include, by weight, 20 parts of sodium iodide, 10 parts of potassium hydroxide, 4 parts of N, N-diethylformamide, 5 parts of hydrogen peroxide, 3 parts of sodium silicate, and 4 parts of tetraethylammonium hydroxide.
In this embodiment, the ultrasonic power in step B is 800W.
In this embodiment, the ultrasonic power in step E is 1200W.
In this example, the flow rate of nitrogen blown out in step F was 30L/min.
Example two:
a cleaning process for semiconductor parts comprises the following steps:
A. firstly, putting semiconductor parts into warm water and washing with water flow for 30 min;
B. then placing the semiconductor parts into a cleaning machine, adding a cleaning agent, and cleaning by adopting ultrasonic for 50 min;
C. then, putting the cleaned parts into cold water for rinsing with water flow for 40 min;
D. adding hydrofluoric acid with concentration of 3% and nitric acid with concentration of 20% into the semiconductor parts cleaned with cold water for acid etching treatment for 8 min;
E. finally, placing the parts subjected to the acid etching treatment into an ultrasonic machine for secondary ultrasonic treatment;
F. and (5) drying the cleaned parts in a nitrogen atmosphere.
In this embodiment, the components of the cleaning agent in step B include, by weight, 30 parts of sodium iodide, 20 parts of potassium hydroxide, 10 parts of N, N-diethylformamide, 15 parts of hydrogen peroxide, 9 parts of sodium silicate, and 12 parts of tetraethylammonium hydroxide.
In this embodiment, the ultrasonic power in step B is 1000W.
In this embodiment, the ultrasonic power in step E is 1400W.
In this example, the flow rate of nitrogen blown out in step F was 40L/min.
Example three:
a cleaning process for semiconductor parts comprises the following steps:
A. firstly, putting semiconductor parts into warm water and washing with water flow for 22 min;
B. then, putting the semiconductor parts into a cleaning machine, adding a cleaning agent, and cleaning by adopting ultrasonic for 35 min;
C. then, putting the cleaned parts into cold water for rinsing with water flow for 32 min;
D. adding hydrofluoric acid with concentration of 3% and nitric acid with concentration of 20% into the semiconductor parts cleaned with cold water for acid etching treatment for 5 min;
E. finally, placing the parts subjected to the acid etching treatment into an ultrasonic machine for secondary ultrasonic treatment;
F. and (5) drying the cleaned parts in a nitrogen atmosphere.
In this embodiment, the components of the cleaning agent in step B include, by weight, 22 parts of sodium iodide, 12 parts of potassium hydroxide, 5 parts of N, N-diethylformamide, 6 parts of hydrogen peroxide, 4 parts of sodium silicate, and 6 parts of tetraethylammonium hydroxide.
In this embodiment, the ultrasonic power in step B is 850W.
In this embodiment, the ultrasonic power in step E is 1250W.
In this example, the flow rate of nitrogen blown out in step F was 32L/min.
Example four:
a cleaning process for semiconductor parts comprises the following steps:
A. firstly, putting semiconductor parts into warm water and washing with water flow for 28 min;
B. then placing the semiconductor parts into a cleaning machine, adding a cleaning agent, and cleaning by adopting ultrasonic for 48 min;
C. then, the cleaned parts are put into cold water to be washed by water flow for 38 min;
D. adding hydrofluoric acid with concentration of 3% and nitric acid with concentration of 20% into the semiconductor parts cleaned with cold water for acid etching treatment for 7 min;
E. finally, placing the parts subjected to the acid etching treatment into an ultrasonic machine for secondary ultrasonic treatment;
F. and (5) drying the cleaned parts in a nitrogen atmosphere.
In this embodiment, the components of the cleaning agent in step B include, by weight, 26 parts of sodium iodide, 14 parts of potassium hydroxide, 8 parts of N, N-diethylformamide, 7 parts of hydrogen peroxide, 8 parts of sodium silicate, and 6 parts of tetraethylammonium hydroxide.
In this embodiment, the ultrasonic power in step B is 920W.
In this embodiment, the ultrasonic power in step E is 1340W.
In this example, the flow rate of nitrogen blown out in step F was 34L/min.
Example five:
a cleaning process for semiconductor parts comprises the following steps:
A. firstly, putting semiconductor parts into warm water and washing with water flow for 29 min;
B. then placing the semiconductor parts into a cleaning machine, adding a cleaning agent, and cleaning by adopting ultrasonic for 32 min;
C. then, the cleaned parts are placed into cold water for washing for 36 min;
D. adding hydrofluoric acid with concentration of 3% and nitric acid with concentration of 20% into the semiconductor parts cleaned with cold water for acid etching treatment for 6 min;
E. finally, placing the parts subjected to the acid etching treatment into an ultrasonic machine for secondary ultrasonic treatment;
F. and (5) drying the cleaned parts in a nitrogen atmosphere.
In this embodiment, the components of the cleaning agent in step B include, by weight, 28 parts of sodium iodide, 13 parts of potassium hydroxide, 8 parts of N, N-diethylformamide, 5 parts of hydrogen peroxide, 8 parts of sodium silicate, and 6 parts of tetraethylammonium hydroxide.
In this embodiment, the ultrasonic power in step B is 920W.
In this embodiment, the ultrasonic power in step E is 1280W.
In this example, the flow rate of nitrogen blown out in step F was 36L/min.
Example six:
a cleaning process for semiconductor parts comprises the following steps:
A. firstly, putting semiconductor parts into warm water and washing with water flow for 25 min;
B. then placing the semiconductor parts into a cleaning machine, adding a cleaning agent, and cleaning by adopting ultrasonic for 40 min;
C. then, putting the cleaned parts into cold water for washing for 35 min;
D. adding hydrofluoric acid with concentration of 3% and nitric acid with concentration of 20% into the semiconductor parts cleaned with cold water for acid etching treatment for 6 min;
E. finally, placing the parts subjected to the acid etching treatment into an ultrasonic machine for secondary ultrasonic treatment;
F. and (5) drying the cleaned parts in a nitrogen atmosphere.
In this embodiment, the components of the cleaning agent in step B include, by weight, 25 parts of sodium iodide, 15 parts of potassium hydroxide, 7 parts of N, N-diethylformamide, 10 parts of hydrogen peroxide, 6 parts of sodium silicate, and 8 parts of tetraethylammonium hydroxide.
In this embodiment, the ultrasonic power in step B is 900W.
In this embodiment, the ultrasonic power in step E is 1300W.
In this example, the flow rate of nitrogen blown out in step F was 35L/min.
The cleaning process adopted by the invention is simple to operate and good in cleaning effect, and can effectively remove dust particles, metal ions, oil stains and dirt and ensure the performance of semiconductor parts; the cleaning agent adopted by the invention is environment-friendly, pollution-free, easy to wash and residue-free, and can effectively remove static electricity on the surface of the semiconductor part.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (5)
1. A semiconductor part cleaning process is characterized in that: the method comprises the following steps:
A. firstly, putting the semiconductor parts into warm water and washing the semiconductor parts for 20-30 min by water flow;
B. then placing the semiconductor parts into a cleaning machine, adding a cleaning agent, and cleaning by adopting ultrasonic for 30-50 min;
C. then, putting the cleaned parts into cold water for washing for 30-40 min;
D. adding hydrofluoric acid with the concentration of 3% and nitric acid with the concentration of 20% into the semiconductor parts cleaned by cold water for carrying out acid etching treatment for 4-8 min;
E. finally, placing the parts subjected to the acid etching treatment into an ultrasonic machine for secondary ultrasonic treatment;
F. and (5) drying the cleaned parts in a nitrogen atmosphere.
2. The process of claim 1, wherein the cleaning comprises: the cleaning agent in the step B comprises, by weight, 20-30 parts of sodium iodide, 10-20 parts of potassium hydroxide, 4-10 parts of N, N-diethylformamide, 5-15 parts of hydrogen peroxide, 3-9 parts of sodium silicate and 4-12 parts of tetraethylammonium hydroxide.
3. The process of claim 1, wherein the cleaning comprises: the ultrasonic power in the step B is 800-.
4. The process of claim 1, wherein the cleaning comprises: the ultrasonic power in the step E is 1200-1400W.
5. The process of claim 1, wherein the cleaning comprises: and F, the blowing flow rate of the nitrogen in the step is 30-40L/min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010680989.0A CN113770100A (en) | 2020-07-15 | 2020-07-15 | Semiconductor part cleaning process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010680989.0A CN113770100A (en) | 2020-07-15 | 2020-07-15 | Semiconductor part cleaning process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113770100A true CN113770100A (en) | 2021-12-10 |
Family
ID=78835169
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010680989.0A Pending CN113770100A (en) | 2020-07-15 | 2020-07-15 | Semiconductor part cleaning process |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113770100A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101465273A (en) * | 2007-12-18 | 2009-06-24 | 中芯国际集成电路制造(上海)有限公司 | Wet-type etching method for reducing wafer surface blemish and device thereof |
| CN101901743A (en) * | 2003-07-24 | 2010-12-01 | 应用材料股份有限公司 | Cleaning process and apparatus for silicate materials |
| CN102218410A (en) * | 2011-04-19 | 2011-10-19 | 浙江露笑光电有限公司 | Method for cleaning polished sapphire |
| CN106062932A (en) * | 2014-05-02 | 2016-10-26 | 三菱瓦斯化学株式会社 | Semiconductor element cleaning liquid and cleaning method |
| CN110976414A (en) * | 2019-12-12 | 2020-04-10 | 游利 | Ultra-high clean cleaning process for semiconductor aluminum alloy parts |
| CN111229764A (en) * | 2018-11-29 | 2020-06-05 | 东莞新科技术研究开发有限公司 | Glass cleaning method |
-
2020
- 2020-07-15 CN CN202010680989.0A patent/CN113770100A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101901743A (en) * | 2003-07-24 | 2010-12-01 | 应用材料股份有限公司 | Cleaning process and apparatus for silicate materials |
| CN101465273A (en) * | 2007-12-18 | 2009-06-24 | 中芯国际集成电路制造(上海)有限公司 | Wet-type etching method for reducing wafer surface blemish and device thereof |
| CN102218410A (en) * | 2011-04-19 | 2011-10-19 | 浙江露笑光电有限公司 | Method for cleaning polished sapphire |
| CN106062932A (en) * | 2014-05-02 | 2016-10-26 | 三菱瓦斯化学株式会社 | Semiconductor element cleaning liquid and cleaning method |
| CN111229764A (en) * | 2018-11-29 | 2020-06-05 | 东莞新科技术研究开发有限公司 | Glass cleaning method |
| CN110976414A (en) * | 2019-12-12 | 2020-04-10 | 游利 | Ultra-high clean cleaning process for semiconductor aluminum alloy parts |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102412172B (en) | Cut/ground silicon wafer surface cleaning method | |
| CN111508824B (en) | Wool making cleaning method and heterojunction battery | |
| MY133080A (en) | Post-lapping cleaning process for silicon wafers | |
| CN108231540A (en) | A kind of rear cleaning applied to solar cell making herbs into wool | |
| CN113675073B (en) | Wafer cleaning method | |
| CN104009122A (en) | Processing method for reworking silicon wafers in silk-screen printing | |
| CN105810563A (en) | Method of washing solar cell silicon wafers | |
| CN112542531A (en) | Silicon wafer pretreatment and heterojunction battery preparation method | |
| CN108054236A (en) | Cleaning monocrystalline silicon etching method | |
| CN110976414A (en) | Ultra-high clean cleaning process for semiconductor aluminum alloy parts | |
| CN106409977A (en) | Solar cell silicon wafer cleaning method and solar cell preparation method | |
| CN106683981B (en) | Cleaning method for texturing polycrystalline silicon wafer | |
| CN113770100A (en) | Semiconductor part cleaning process | |
| CN106833954B (en) | Additive of monocrystalline silicon piece texturing pre-cleaning liquid and application thereof | |
| CN108384667A (en) | A kind of silicon chip cleaning liquid and silicon wafer cleaning method | |
| CN108511316A (en) | The cleaning method of semiconductor wafer | |
| CN112928017A (en) | Cleaning method for effectively removing metal on surface of silicon wafer | |
| CN109148262B (en) | Cleaning method of solar polycrystalline black silicon wafer | |
| CN102512967A (en) | Inorganic ceramic membrane washing method | |
| CN216488101U (en) | Chain type alkali polishing system | |
| CN103157620A (en) | Cleaning fluid and cleaning method of silicon wafer back before metalization | |
| CN113539813B (en) | Monocrystalline silicon piece back polishing method and silicon piece | |
| CN109047168A (en) | A kind of structured packing degreasing process | |
| CN108766869A (en) | A kind of silicon chip of solar cell slot type cleaning method | |
| CN112143573A (en) | Additive for cleaning silicon wafer after alkali polishing and application thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20211210 |