CN113764897A - Broadband microwave absorber based on single-layer graphene auxiliary metamaterial - Google Patents
Broadband microwave absorber based on single-layer graphene auxiliary metamaterial Download PDFInfo
- Publication number
- CN113764897A CN113764897A CN202111021047.2A CN202111021047A CN113764897A CN 113764897 A CN113764897 A CN 113764897A CN 202111021047 A CN202111021047 A CN 202111021047A CN 113764897 A CN113764897 A CN 113764897A
- Authority
- CN
- China
- Prior art keywords
- layer
- graphene
- metamaterial
- microwave absorber
- auxiliary
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 54
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 54
- 239000006096 absorbing agent Substances 0.000 title claims abstract description 46
- 239000002356 single layer Substances 0.000 title claims abstract description 28
- 239000010410 layer Substances 0.000 claims abstract description 42
- 229910052751 metal Inorganic materials 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims description 14
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 230000005684 electric field Effects 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 239000002346 layers by function Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 238000010521 absorption reaction Methods 0.000 abstract description 16
- 238000004806 packaging method and process Methods 0.000 abstract description 5
- 239000000126 substance Substances 0.000 abstract description 4
- 230000010287 polarization Effects 0.000 abstract description 3
- 239000010409 thin film Substances 0.000 abstract 1
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000000862 absorption spectrum Methods 0.000 description 2
- 238000005388 cross polarization Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q17/00—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0086—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices having materials with a synthesized negative refractive index, e.g. metamaterials or left-handed materials
Landscapes
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
Abstract
The invention discloses a broadband microwave absorber based on a single-layer graphene auxiliary metamaterial, and belongs to the technical field of microwave devices. The designed broadband metamaterial microwave absorber is sequentially provided with a single-layer circular square-hole graphene layer, an FR4 medium and a metal bottom plate from top to bottom, wherein the graphene layer at the top is circular patterned single-layer graphene. When the chemical potential of the graphene is 0.1eV, the graphene super-broadband thin film absorber can achieve over 90% of good absorption within the ultra-broadband (16-100 GHz) range of 145%, the thickness of the whole absorber can be smaller than 1mm, and the application requirement of a 5G integrated packaging system is met. The invention has simple structure, wide bandwidth, insensitive polarization, wide incident angle and other advantages, and has wide practical foreground in electromagnetic stealth, electromagnetic interference shielding, 5G system and other fields.
Description
Technical Field
The invention relates to the field of microwave perfect wave absorbing structures, in particular to a broadband microwave absorber based on a single-layer graphene auxiliary metamaterial.
Background
As system integration and application requirements increase, more and more digital and analog modules are embedded into a single chip. The comprehensive influence of high speed, high integration and small size of equipment can cause a severe electromagnetic environment in an integrated packaging system, and the problem of electromagnetic compatibility is more serious. Over the past several decades, researchers have proposed many electromagnetic interference (EMI) shielding structures for use in different situations. Current electromagnetic shielding methods can be divided into two types: reflective and absorptive. The microwave absorber has great value in practical application, such as electromagnetic interference protection, energy collection efficiency improvement and detection sensitivity improvement. The metamaterial technology breaks through the 1/4 lambda thickness limit of the traditional absorber designed based on the power transmission line model, and realizes more compact structural dimension design with the same absorption capacity. In recent years, graphene has been widely studied as a novel two-dimensional material having excellent photoelectric characteristics. Graphene has more excellent plasma properties when interacting with incident electromagnetic waves than metals, and thus has many potential applications in the field of optoelectronics. In addition, the surface conductivity of the graphene can be continuously adjusted by a method of doping and adjusting chemical potential or by connecting a voltage to a side end, so that the Fermi level of the graphene is changed, and further the adjustment of target absorption performance is realized.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention provides the broadband microwave absorber based on the single-layer graphene auxiliary metamaterial, so that the excellent performances of minimum thickness, wide working frequency band and the like are realized, and the broadband microwave absorber can be applied to various fields such as electromagnetic stealth, electromagnetic interference shielding, 5G systems and the like.
In order to achieve the purpose, the technical scheme of the invention is as follows:
a broadband microwave absorber based on a single-layer graphene auxiliary metamaterial is formed by continuously splicing unit structures on a plane in an array form; each unit structure is formed by overlapping different functional layers, and is sequentially provided with a top graphene layer, an FR4 medium layer and a metal substrate from top to bottom; the top graphene layer is patterned circular single-layer graphene, cross sections of the FR4 medium layer and the metal substrate at any positions are squares with the same size, the top graphene layer is attached to the center of the upper surface of the FR4 medium layer, and the metal substrate is attached to the lower surface of the FR4 medium layer.
Preferably, the center of the circular pattern of the top graphene layer is provided with a square hole, the radius of the circle is 1.25mm, the side length of the square hole at the center is 0.7mm, and the deflection angle of the square hole is 45 degrees.
Preferably, the top graphene layer changes the fermi level by means of an applied electric field, a magnetic field or by using doping.
Preferably, the FR4 dielectric layer is made of FR4, the thickness of the FR4 is 0.4-1.2 mm, the relative dielectric constant is 4.3, and the loss tangent is 0.025.
Preferably, the metal substrate is made of gold, silver, copper, iron or aluminum, has a thickness of 0.1-0.5 μm, and has a thickness greater than the skin depth of the electromagnetic wave.
Preferably, the planar profile of the unit structure is square with a side length of 2.5 mm.
Preferably, the unit structures are continuously spliced into a rectangle or a square in an array form.
Compared with the prior art, the invention has the following remarkable advantages:
the top layer of the metamaterial absorber is formed by continuous round or round square hole type single-layer graphene, the metamaterial absorber is simple and compact in structure, perfectly symmetrical and easy to realize, and the absorber can have the polarization insensitivity characteristic; according to the metamaterial absorber provided by the invention, when the chemical potential of graphene is 0.1eV, over 90% of good absorption can be realized in the ultra wide band (16-100 GHz) range of the microwave range, which is also a unique characteristic of the graphene-assisted metamaterial microwave absorber designed by the invention; when the incidence angle is increased, good absorption effect can still be maintained. Meanwhile, the whole thickness of the absorber can be as low as about 0.4mm, and the application requirement of 5G system module packaging is met.
Drawings
FIG. 1 is a three-dimensional schematic diagram of an array structure of a broadband microwave absorber based on a single-layer graphene auxiliary metamaterial in an embodiment;
FIG. 2 is a top view of a cell structure of a broadband microwave absorber based on a single-layer graphene auxiliary metamaterial in an embodiment;
FIG. 3 is a transmission curve, a reflection curve, a cross-polarization reflection curve and an absorption curve obtained by simulation of the absorber in the embodiment when TE and TM polarized electromagnetic waves are vertically incident;
FIG. 4 is an absorption curve of a broadband microwave absorber based on a single-layer graphene auxiliary metamaterial in different dielectric layer thicknesses in the embodiment;
fig. 5 is an absorption spectrum of a broadband microwave absorber based on a single-layer graphene auxiliary metamaterial in the embodiment at different incident angles of a TE mode.
Fig. 6 is an absorption spectrum of a broadband microwave absorber based on a single-layer graphene auxiliary metamaterial in the embodiment at different incidence angles of a TM mode.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below. It should be noted that the specific embodiments described herein are only for explaining the present invention and are not used to limit the present invention.
In a preferred embodiment of the invention, a broadband microwave absorber based on a single-layer graphene auxiliary metamaterial is provided, the absorber is formed by continuously splicing a series of same unit structures on a plane in an array form, and the spliced shape can be a rectangle or a square, and is determined according to the requirements of a device.
As shown in fig. 1, each unit structure is composed of different functional layers stacked, and from top to bottom, a top graphene layer 1, an FR4 dielectric layer 2 and a metal substrate 3 are arranged in sequence. The top graphene layer 1 is patterned circular single-layer graphene, the circular single-layer graphene is circular in outer contour, and holes can be formed in the inner portion or not formed in the inner portion according to needs. In this embodiment, a square hole is formed in the center of the circular single-layer graphene. The cross sections of the FR4 dielectric layer 2 and the metal substrate 3 at any position are both squares with the same size, the top graphene layer 1 is attached to the center of the upper surface of the FR4 dielectric layer 2, and the metal substrate 3 is attached to the lower surface of the FR4 dielectric layer 2. The three-layer structure of each absorption unit is combined to form a square periodic unit, and the plane outline of the square periodic unit in a plan view state is square. The fermi level of the top graphene layer 1 can be adjusted by applying an electric field, a magnetic field, doping, or the like.
As shown in fig. 2, the respective dimensional parameters of the three-layer structure of each absorbent unit can be selected as follows: the unit period P, i.e. the side lengths Px and Py of the square, is 2.5 mm; in a circular pattern with a square hole in the center of the top graphene layer 1, the radius R of the circle is 1.25mm, the side length L of the square hole in the center is 0.7mm, and the deflection angle α of the square hole is 45 ° (where the deflection angle α is equivalent to the included angle between a diagonal line of the cross section of the square hole and a diagonal line of the upper surface of the FR4 dielectric layer 2); the material of the FR4 dielectric layer 2 is FR4, the thickness h of which21.2mm, a relative dielectric constant of 4.3 and a loss tangent of 0.025; the metal substrate 3 is made of copper, has a thickness of 0.2mm and an electrical conductivity σ of 5.8 × 107S/m。
In the invention, the absorptivity of the broadband microwave absorber based on the single-layer graphene auxiliary metamaterial is defined as A ═ 1-R-T-R⊥Wherein R is reflectance, T is transmittance, R⊥Is a parameter of cross-polarized wave reflection. In order to maximize the absorptivity, the reflectivity and the transmissivity in the whole frequency range are required to be as small as possible, the bottom layer of the wave absorbing unit designed by the invention is a metal substrate 3, electromagnetic waves cannot be transmitted, and the transmissivity T approaches to zero.
As shown in fig. 3, in order to evaluate the characteristics of the absorber designed in the example, the absorption curves of the polarized electromagnetic wave at normal incidence were calculated at TE- (electric field along y-axis direction) and TM- (magnetic field along y-axis direction). Setting the chemical potential mucAnd the relationship time tau is respectively 0.1eV and 0.2ps, and a transmission curve T, a reflection curve R and a cross-polarization reflection curve R of the absorber shown in FIG. 3 are obtained⊥And absorption curve a. As can be seen in FIG. 3, the same results were obtained for TE-polarized incidence and TM-polarized incidence, which may be due to the absorber cell structureA symmetrical design. The absorption rate can reach more than 90% in the frequency range of 16GHz-100GHz, and the bandwidth ratio is 145% in the frequency range.
As shown in FIG. 4, in order to demonstrate the absorption performance exhibited by the absorber when the thickness of the FR4 medium layer 2 of the absorber was varied, the thickness h of the FR4 medium layer 2 in this example was adjusted2The thickness of the film is adjusted to be between 0.4 and 1.45 mm. It can be seen from the results that higher absorption performance can still be achieved when the thickness of the absorber is as low as about 0.4 mm. The smaller thickness ensures that the absorber can be used in a module package for a 5G system.
Fig. 5 and 6 show the absorption performance of the absorber designed in the embodiment when TE polarized and TM polarized electromagnetic waves are incident at different angles, respectively. It can be seen from the figure that the absorber proposed by the present embodiment can still maintain the absorption rate over 90% in a wide frequency range in the range of 0 ° to 60 ° of the incident electromagnetic wave in the TM mode and the TE mode.
Therefore, the broadband microwave absorber based on the single-layer graphene auxiliary metamaterial has the advantages of high absorption of an ultra-wide band, insensitivity to polarization, wide-angle incidence and the like, and meanwhile, the absorber is small in size, thin in thickness and easy to integrate and manufacture, can be applied to 5G system module packaging, and can be used for absorbing electromagnetic interference in a packaging system.
While the invention has been described in conjunction with specific features and embodiments thereof, it will be apparent that various modifications and combinations thereof are possible. For example, the metal substrate may be made of other common metals such as gold, silver, iron, and aluminum, besides copper, and has a thickness of 0.1-0.5 μm, which is larger than the skin depth of the electromagnetic wave. (ii) a Thickness h of FR4 dielectric layer2Can also be adjusted between 0.4mm and 1.2 mm. Accordingly, the specification and figures are merely exemplary illustrations of the invention as defined in the appended claims and are intended to cover any and all modifications, variations, combinations or equivalents within the scope of the invention. It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the scope of the invention. Thus, provided this is the inventionSuch modifications and variations are within the scope of the invention as determined by the appended claims and their equivalents, as may be included in the present invention.
Claims (7)
1. A broadband microwave absorber based on a single-layer graphene auxiliary metamaterial is characterized in that the absorber is formed by continuously splicing unit structures on a plane in an array form; each unit structure is formed by superposing different functional layers, and a top graphene layer (1), an FR4 dielectric layer (2) and a metal substrate (3) are arranged from top to bottom in sequence; the graphene-based solar cell comprises a top graphene layer (1), an FR4 medium layer (2) and a metal substrate (3), wherein the cross sections of the top graphene layer (1) are squares with the same size at any positions, the top graphene layer (1) is attached to the center of the upper surface of the FR4 medium layer (2), and the metal substrate (3) is attached to the lower surface of the FR4 medium layer (2).
2. The broadband microwave absorber based on the single-layer graphene auxiliary metamaterial according to claim 1, wherein the top graphene layer (1) is provided with a square hole in the center of a circular pattern, the radius of the circle is 1.25mm, the side length of the square hole in the center is 0.7mm, and the deflection angle of the square hole is 45 degrees.
3. The broadband microwave absorber based on the single-layer graphene auxiliary metamaterial according to claim 1, wherein the top graphene layer (1) changes the Fermi level through an external electric field, a magnetic field or by using a doping mode.
4. The broadband microwave absorber based on the single-layer graphene auxiliary metamaterial according to claim 1, wherein the FR4 medium layer (2) is made of FR4, the thickness of the FR4 is 0.4-1.2 mm, the relative dielectric constant of the FR is 4.3, and the loss tangent of the FR is 0.025.
5. The broadband microwave absorber based on the single-layer graphene auxiliary metamaterial according to claim 1, wherein the metal substrate (3) is made of gold, silver, copper, iron or aluminum, and has a thickness of 0.1-0.5 μm, and the thickness is larger than the skin depth of the electromagnetic wave.
6. The broadband microwave absorber based on the single-layer graphene auxiliary metamaterial according to claim 1, wherein the plane outline of the unit structure is square, and the side length is 2.5 mm.
7. The broadband microwave absorber based on the single-layer graphene auxiliary metamaterial according to claim 1, wherein the unit structures are continuously spliced into a rectangle or a square in an array form.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111021047.2A CN113764897A (en) | 2021-09-01 | 2021-09-01 | Broadband microwave absorber based on single-layer graphene auxiliary metamaterial |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111021047.2A CN113764897A (en) | 2021-09-01 | 2021-09-01 | Broadband microwave absorber based on single-layer graphene auxiliary metamaterial |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113764897A true CN113764897A (en) | 2021-12-07 |
Family
ID=78792448
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111021047.2A Pending CN113764897A (en) | 2021-09-01 | 2021-09-01 | Broadband microwave absorber based on single-layer graphene auxiliary metamaterial |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113764897A (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108183340A (en) * | 2018-01-22 | 2018-06-19 | 中国科学院上海光学精密机械研究所 | The adjustable wave absorbing device of broadband electricity based on the double annulus of graphene |
| CN109411898A (en) * | 2018-10-22 | 2019-03-01 | 桂林电子科技大学 | A method of the adjustable wave absorbing device of Terahertz double frequency-band based on graphene |
| CN110794492A (en) * | 2019-11-29 | 2020-02-14 | 安阳师范学院 | Graphene adjustable broadband terahertz absorber |
| CN110854546A (en) * | 2019-11-29 | 2020-02-28 | 安阳师范学院 | Graphene-adjustable dual-band metamaterial absorber |
| CN111082229A (en) * | 2019-12-23 | 2020-04-28 | 安阳师范学院 | Terahertz broadband adjustable absorber based on single-ring graphene |
| AU2020101400A4 (en) * | 2020-07-17 | 2020-08-20 | Guilin Univ. Electr. Techol. | A four-band terahertz absorber with independently modulation of amplitude and frequency |
| CN111697346A (en) * | 2020-06-30 | 2020-09-22 | 安阳师范学院 | Terahertz double-broadband adjustable absorber based on graphene |
| CN113161758A (en) * | 2021-04-27 | 2021-07-23 | 中国人民解放军国防科技大学 | Adjustable ultra-wideband terahertz absorber based on metal and graphene |
-
2021
- 2021-09-01 CN CN202111021047.2A patent/CN113764897A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108183340A (en) * | 2018-01-22 | 2018-06-19 | 中国科学院上海光学精密机械研究所 | The adjustable wave absorbing device of broadband electricity based on the double annulus of graphene |
| CN109411898A (en) * | 2018-10-22 | 2019-03-01 | 桂林电子科技大学 | A method of the adjustable wave absorbing device of Terahertz double frequency-band based on graphene |
| CN110794492A (en) * | 2019-11-29 | 2020-02-14 | 安阳师范学院 | Graphene adjustable broadband terahertz absorber |
| CN110854546A (en) * | 2019-11-29 | 2020-02-28 | 安阳师范学院 | Graphene-adjustable dual-band metamaterial absorber |
| CN111082229A (en) * | 2019-12-23 | 2020-04-28 | 安阳师范学院 | Terahertz broadband adjustable absorber based on single-ring graphene |
| CN111697346A (en) * | 2020-06-30 | 2020-09-22 | 安阳师范学院 | Terahertz double-broadband adjustable absorber based on graphene |
| AU2020101400A4 (en) * | 2020-07-17 | 2020-08-20 | Guilin Univ. Electr. Techol. | A four-band terahertz absorber with independently modulation of amplitude and frequency |
| CN113161758A (en) * | 2021-04-27 | 2021-07-23 | 中国人民解放军国防科技大学 | Adjustable ultra-wideband terahertz absorber based on metal and graphene |
Non-Patent Citations (2)
| Title |
|---|
| HAILONG HUANG,HUI XIA,WENKE XIE,ZHIBO GUO,HONGJIAN LI&DING XIE, SCIENTIFIC REPORT, pages 2 * |
| 鲍捷，宁仁霞，许媛等: "石墨烯材料在半导体中的应用", pages: 51 - 53 * |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6916965B2 (en) | Controllable wave absorption metamaterial | |
| CN112292014B (en) | Microwave transmission passband adjustable high-transmittance optical window based on phase-change material and graphene | |
| CN110854546A (en) | Graphene-adjustable dual-band metamaterial absorber | |
| CN111430926B (en) | Polarization insensitive low RCS ultra-wideband metamaterial wave absorber with visible light transmission | |
| CN111338011B (en) | Method for realizing ultra-wideband light absorption enhancement by adopting composite microstructure | |
| CN111525272B (en) | Broadband terahertz wave absorber based on three-dart-shaped graphene | |
| CN112490678B (en) | VO-based2Broadband terahertz super-surface absorption unit and super-surface absorber | |
| CN113451784B (en) | High-performance packaging radiation absorber | |
| CN111446551A (en) | Multi-band adjustable terahertz wave absorber based on graphene super-surface | |
| CN111082229A (en) | Terahertz broadband adjustable absorber based on single-ring graphene | |
| WO2017114131A1 (en) | Metamaterial structure, radome and antenna system | |
| CN108511918B (en) | Electromagnetic wave asymmetric transmission controller based on metamaterial | |
| CN115313058A (en) | Transparent reconfigurable multifunctional super surface | |
| CN111697346A (en) | Terahertz double-broadband adjustable absorber based on graphene | |
| CN110716247A (en) | Metamaterial selective wave absorber with high reflection in visible light and high absorption in middle infrared | |
| CN108718006B (en) | Three-band topological metamaterial terahertz wave absorber | |
| CN211126084U (en) | Graphene-adjustable dual-band metamaterial absorber | |
| CN110471137B (en) | Dual-band infrared absorber | |
| CN113764897A (en) | Broadband microwave absorber based on single-layer graphene auxiliary metamaterial | |
| Barde et al. | Angle-independent wideband metamaterial microwave absorber for C and X band application | |
| CN112563759B (en) | Dual-frequency ultra-wideband metamaterial wave-absorbing unit and wave-absorbing body | |
| CN110994188A (en) | Strong coupling frequency selective surface structure insensitive to incident electromagnetic wave full angle | |
| CN107402418B (en) | Infrared broadband absorber based on multilayer grating structure | |
| CN214280217U (en) | Wave-absorbing metamaterial | |
| CN212968075U (en) | Terahertz double-broadband adjustable absorber based on graphene |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |