CN113764596A - Organic electroluminescent device and preparation method thereof - Google Patents

Organic electroluminescent device and preparation method thereof Download PDF

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Publication number
CN113764596A
CN113764596A CN202111037006.2A CN202111037006A CN113764596A CN 113764596 A CN113764596 A CN 113764596A CN 202111037006 A CN202111037006 A CN 202111037006A CN 113764596 A CN113764596 A CN 113764596A
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layer
organic electroluminescent
electroluminescent device
light emitting
electron
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袁伟
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H10K50/171—Electron injection layers

Abstract

The embodiment of the application discloses an organic electroluminescent device and a preparation method thereof, wherein the organic electroluminescent device comprises: a cathode layer, a light emitting layer, an anode layer and an electronic functional layer. A light emitting layer disposed on the cathode layer; an anode layer disposed on the light emitting layer; an electron function layer arranged between the cathode layer and the light emitting layer and made of MgxZn1‑xO, x is more than 0 and less than 0.56. The organic electroluminescent device can solve the problem that the ETL layer in the organic electroluminescent device in the prior art is influenced by materials, so that the ETL layer is limited to be manufactured by the traditional manufacturing process, and the brightness of a display picture is not uniform.

Description

Organic electroluminescent device and preparation method thereof
Technical Field
The application relates to the technical field of display, in particular to an organic electroluminescent device and a preparation method thereof.
Background
The inkjet printing organic light-Emitting Diode (IJP OLED) is a new display technology, has incomparable physical advantages of the liquid crystal display technology, has the characteristics of active light emission, real color, infinite contrast, zero delay, transparent display, flexible display, free display form and the like, and is a next generation display technology capable of replacing the liquid crystal display technology. The IJP OLED display technology does not need the support of backlight, so that the structure is simpler than that of an LCD, and the volume of a display product can be thinner and thinner. Moreover, the working conditions of the solar cell have a series of advantages of low driving voltage, low energy consumption and capability of being matched with a solar cell, an integrated circuit and the like. The IJPOLED device is an all-solid-state and non-vacuum device, and has the characteristics of shock resistance, low temperature resistance (-40 ℃) and the like, so the IJPOLED device has a very wide application range.
In the direction of large-sized panels, in order to meet the requirement of high-resolution 8K display, the conventional IJP OLED structure is also being changed, but the current IJP OLED structure still has a lot of problems, and one of the most critical problems is that an Electron Transport Layer (ETL) in the conventional IJP OLED structure is affected by materials and can only be manufactured by the conventional manufacturing process, for example, an ETL Layer is manufactured by inkjet printing, so that the film morphology of the ETL Layer is difficult to control and the film thickness uniformity is not good, and therefore, the display uniformity of the display device is greatly affected, and the brightness of the display screen is not uniform.
Disclosure of Invention
The embodiment of the application provides an organic electroluminescent device and a preparation method thereof, and aims to solve the problem that in the prior art, an ETL layer in the organic electroluminescent device is limited to be manufactured by a traditional manufacturing process due to the influence of materials, so that the brightness of a display picture is not uniform.
In one aspect, an embodiment of the present application provides an organic electroluminescent device, including: a cathode layer, a light emitting layer, an anode layer and an electronic functional layer. A light emitting layer disposed on the cathode layer; an anode layer disposed on the light emitting layer; an electron function layer arranged between the cathode layer and the light emitting layer and made of MgxZn1-xO，0＜x＜0.56。
Optionally, in some embodiments of the present application, the resistivity of the electronically functional layer is less than 1 ohm-cm.
Optionally, in some embodiments of the present application, the carrier concentration of the electronic function layer is not lower than 1.0 × 1017Per cubic centimeter, and the carrier mobility of the electronic functional layer is greater than 1 square centimeter/(volt-second).
Optionally, in some embodiments of the present application, the thickness of the electronic functional layer is 10 to 500 angstroms, and the film forming speed is 0.1 to 10 angstroms/second.
Optionally, in some embodiments of the present application, the Mg isxZn1-xX in O is 0.1.
Optionally, in some embodiments of the present application, the organic electroluminescent device further includes: the first substrate is arranged on one side, far away from the light emitting layer, of the cathode layer.
Optionally, in some embodiments of the present application, the organic electroluminescent device further includes: and the second substrate is arranged on one side of the anode layer, which is far away from the light-emitting layer.
Optionally, in some embodiments of the present application, the electronic functional layer includes:
an electron injection layer disposed on the cathode layer;
an electron transport layer disposed between the electron injection layer and the light emitting layer; wherein the material of the electron transport layer is MgxZn1-xO，0＜x＜0.56。
Optionally, in some embodiments of the present application, the organic electroluminescent device further includes a hole transport layer disposed on the light emitting layer, and a hole injection layer disposed between the hole transport layer and the anode layer.
In another aspect, the present application further provides a method for manufacturing an organic electroluminescent device, the method comprising the steps of:
forming a cathode layer;
forming an electronic function layer on the cathode layer, wherein the electronic function layer is made of MgxZn1-xO，0＜x＜0.56；
Forming a light emitting layer on the electron function layer;
an anode layer is formed on the light emitting layer.
The organic electroluminescent device comprises a cathode layer, a light emitting layer, an anode layer and an electronic function layer, wherein the electronic function layer is made of MgxZn1-xO due to MgxZn1-xThe O has a polycrystalline structure and a defect structure, so that the electronic function layer has good n-type semiconductor characteristics, and can better meet the requirement of the carrier mobility of the organic electroluminescent device. In particular, the conventional structure is affected by the material,therefore, the method is limited to the method of using IJP to manufacture an electronic functional layer, and the problem of uneven film surface is easily caused because the film surface of the film layer manufactured by printing is difficult to control the appearance of the film layer, so that the display uniformity of the display device is greatly influenced, and the product yield is reducedxZn1-xThe O is used as the material of the electronic function layer, can be manufactured by using the process procedures of evaporation plating, sputtering plating and the like, is favorable for improving the film thickness uniformity and ensuring the film surface appearance to be better, thereby being favorable for improving the display uniformity of the display device, solving the problem of uneven brightness of a display picture and improving the production yield of products.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic view of a first structure of an organic electroluminescent device provided in an embodiment of the present application;
fig. 2 is a schematic diagram of a second structure of an organic electroluminescent device provided in an embodiment of the present application;
fig. 3 is a schematic view of a third structure of an organic electroluminescent device provided in an embodiment of the present application;
fig. 4 is a schematic diagram of a fourth structure of an organic electroluminescent device provided in an embodiment of the present application;
fig. 5 is a flowchart of a method for manufacturing an organic electroluminescent device according to an embodiment of the present disclosure.
100. Organic electroluminescent device, 10, first substrate, 11, second substrate, 20, cathode layer, 30, electron functional layer, 31, electron injection layer, 32, electron transport layer, 40, light emitting layer, 51, hole transport layer, 52, hole injection layer, 60, anode layer.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
The embodiment of the application provides an organic electroluminescent device and a preparation method thereof, which can solve the problem that in the prior art, an ETL layer in the organic electroluminescent device is influenced by materials, so that the ETL layer is limited to be manufactured by a traditional manufacturing process, and the brightness of a display picture is not uniform. The following are detailed below. It should be noted that the following description of the embodiments is not intended to limit the preferred order of the embodiments. In addition, in the description of the present application, the term "including" means "including but not limited to". The terms "first," "second," "third," and the like are used merely as labels to distinguish between different objects and not to describe a particular order.
Referring to fig. 1, fig. 1 is a schematic view illustrating a first structure of an organic electroluminescent device according to an embodiment of the present disclosure. As shown in fig. 1, an embodiment of the present application provides an organic electroluminescent device 100, including: a cathode layer 20, a light emitting layer 40 and an anode layer 60, and an electron functional layer 30. The light emitting layer 40 is disposed on the cathode layer 20; the anode layer 60 is disposed on the light emitting layer 40; the organic electroluminescent device 100 further includes an electronic function layer 30, the electronic function layer 30 is disposed between the cathode layer 20 and the light emitting layer 40, and the material of the electronic function layer 30 is MgxZn1-xO，0＜x＜0.56。
Note that MgxZn1-xThe value of x in O may be, but is not limited to, 0 to 0.56, preferably 0 < x < 0.56, and within this range MgxZn1-xO has both good electron injection and electron transport properties, and therefore, Mg is usedxZn1-xThe electronic function layer 30 formed by O may be an electronic function layer 30 having both electron injection and electron transport functions, and may further include an electron injection sublayer 31 and an electron transport sublayer 32, and the organic electroluminescent device 100 in fig. 1 has the electronic functionThe layer 30 is an example of an electron functional layer 30 that functions both for electron injection and transport.
In the embodiment of the present application, the cathode layer 20 is formed by using a film forming process such as Plasma Enhanced Chemical Vapor Deposition (PECVD), sputtering or evaporation, wherein the cathode layer 20 is made of a transparent conductive oxide TCO such as indium tin oxide ITO, indium gallium zinc oxide IGZO, indium zinc oxide IZO, tin oxide SnO, and the like, and the transparent conductive oxide TCO is transparent and has high conductivity, which is beneficial to reducing optical loss; the thickness of the cathode layer 20 is preferably 80 to 150 nm.
In the embodiment, the electronic function layer 30 is disposed on the cathode layer 20, and the electronic function layer 30 has both functions of electron injection and electron transport. Specifically, the electronic functional layer 30 may be prepared by one or more of Metal Organic Chemical Vapor Deposition (MOCVD), Pulsed Laser Deposition (PLD), Molecular Beam Epitaxy (MBE), Magnetron Sputtering (MS), Ion Beam Sputtering (IBS), Co-evaporation (Co-evaporation), and Flash evaporation, which is not limited in the present invention.
In the examples of the present application, Mg is usedxZn1-xAn electron functional layer 30 made of O, since MgxZn1-xO has a polycrystalline structure and a defect structure, so that the electronic function layer 30 has good n-type semiconductor characteristics, and the resistivity of the electronic function layer 30 is less than 1 ohm-cm; the carrier concentration of the electronic function layer 30 is not less than 1.0X 1017The electron mobility of the electron functional layer 30 is larger than 1 square centimeter/(volt second), and the electron functional layer can better meet the requirement of the organic electroluminescent device 100 on the electron mobility.
In the embodiment of the present application, the thickness of the electronic functional layer 30 is 10 to 500 angstroms, and the film forming speed is 0.1 to 10 angstroms/second. In particular, Mg is usedxZn1-xThe electronic function layer 30 formed by the O material through a film forming process such as sputtering or evaporation plating has a film thickness uniformity of over 50%, and a good film surface morphology, which is beneficial to improving the display uniformity of the display device and improving the product yield.
In the embodiment of the present invention, the light emitting layer 40 is disposed on the electronic functional layer 30, the thickness of the light emitting layer 40 is 38-43 nm, and the light emitting layer 40 includes red pixels, green pixels, and blue pixels for emitting red, green, and blue colors.
In the present embodiment, the anode layer 60 is provided on the light-emitting layer 40, and the anode layer 60 is formed by a film formation process such as sputtering or vapor deposition, and the anode layer 60 may have a single-layer structure or a multi-layer structure. The anode layer 60 may be made of a thin metal, such as silver, aluminum, platinum, copper, molybdenum, titanium, etc.; the anode layer 60 may also be made of transparent conductive oxide TCO such as indium tin oxide ITO, indium gallium zinc oxide IGZO, indium zinc oxide IZO, tin oxide SnO, etc. The thickness of the anode layer 60 is preferably 150 to 250 nm.
The organic electroluminescent device 100 provided by the embodiment of the present application includes a cathode layer 20, a light emitting layer 40, an anode layer 60, and an electronic function layer 30. Wherein, the material used for the electronic function layer 30 is MgxZn1-xO due to MgxZn1-xThe O has a polycrystalline structure and a defect structure, so that the electronic function layer 30 has a good n-type semiconductor characteristic, and can better meet the requirement of the carrier mobility of the organic electroluminescent device 100. Specifically, the conventional structure is affected by materials, so that the method is limited to the method of IJP for manufacturing the electronic function layer 30, and the problem of uneven film surface is easily caused due to the difficulty in controlling the film morphology of the printed film, so that the display uniformity of the display device is greatly affected, and the product yield is reduced. This application uses MgxZn1-xThe O as the material of the electronic function layer 30 can be manufactured by using a process such as evaporation or sputtering, which is beneficial to improving the film thickness uniformity and making the film surface morphology better, thereby being beneficial to improving the display uniformity of the display device, solving the problem of uneven brightness of the display screen and improving the production yield of the product.
As a specific embodiment of the present application, as shown in fig. 2, fig. 2 is a schematic diagram of a second structure of an organic electroluminescent device provided in an example of the present application. This embodiment is a modification based on the first embodiment. Among them, the organic electroluminescent device 200 shown in fig. 2 is different from the organic electroluminescent device 100 shown in fig. 1 in that: the electronically functional layer 30 in the organic electroluminescent device 200 shown in fig. 2 comprises: an electron injection layer 31 and an electron transport layer 32; the organic electroluminescent device 200 further includes: a hole transport layer 51 and a hole injection layer 52.
In the embodiment of the present application, the electron injection layer 31 is disposed on the cathode layer 20, and the material of the electron injection layer 31 is MgxZn1-xO, 0 < x < 0.56, preferably x has a value of 0.1, i.e. Mg is used0.1Zn0.9O forms the entire electron injection layer 31.
In the embodiment of the present application, the electron transport layer 32 is provided on the electron injection layer 31. The material of the electron transport layer 32 is MgxZn1-xO, 0 < x < 0.56, preferably x has a value of 0.1, i.e. Mg is used0.1Zn0.9O forms the entire electron transport layer 32.
In the embodiment of the present invention, the light-emitting layer 40 is disposed on the electron transport layer 32, and the light-emitting layer 40 includes red pixels, green pixels, and blue pixels for emitting red, green, and blue colors.
In the embodiment of the present application, the hole transport layer 51 is disposed on the light emitting layer 40, and the hole transport layer 51 is an organic hole transport material and has a hole carrier transport function.
In the embodiment of the present application, the hole injection layer 52 is disposed on the hole transport layer 51, and the hole injection layer 52 is an organic hole injection material and has a hole carrier transport and injection function.
In the present embodiment, the anode layer 60 is formed on the surface of the hole injection layer 52 on the side away from the light-emitting layer 40 by a film formation process such as sputtering or vapor deposition, and the anode layer 60 may have a single-layer structure or a multi-layer structure. The anode layer 60 may be made of a thin metal, such as silver, aluminum, platinum, copper, molybdenum, titanium, etc.; the anode layer 60 may also be made of transparent conductive oxide TCO such as indium tin oxide ITO, indium gallium zinc oxide IGZO, indium zinc oxide IZO, tin oxide SnO, etc. The thickness of the anode layer 60 is preferably 150 to 250 nm.
As a specific embodiment of the present application, as shown in fig. 3, fig. 3 is a schematic diagram of a third structure of an organic electroluminescent device provided in an example of the present application. This embodiment is a modification based on the second embodiment. Among them, the organic electroluminescent device 300 shown in fig. 3 is different from the organic electroluminescent device 200 shown in fig. 2 in that: the organic electroluminescent device 300 shown in fig. 3 further includes: and a first substrate 10, wherein the first substrate 10 is arranged on one side of the cathode layer 20 far away from the light-emitting layer 40.
In the embodiment of the present application, the first substrate 10 has good light transmittance in the visible light region, has certain capability of preventing moisture and oxygen from penetrating, and has good surface smoothness, and the first substrate 10 may be, but is not limited to, a glass substrate, or a flexible PI substrate. The flexible PI substrate may be made of one of polyester and a polyphthalamide compound or a relatively thin metal, which is not limited in the present invention.
In the embodiment of the present application, the cathode layer 20 is formed on the first substrate 10 by a film formation process such as Plasma Enhanced Chemical Vapor Deposition (PECVD), sputtering, or evaporation. The cathode layer 20 is made of a transparent conductive oxide TCO such as indium tin oxide ITO, indium gallium zinc oxide IGZO, indium zinc oxide IZO, tin oxide SnO, and the like, and the transparent conductive oxide TCO is transparent and has high conductivity, which is beneficial to reducing optical loss. The thickness of the cathode layer 20 is preferably 80 to 150 nm.
It should be noted that, before forming the cathode layer 20, a pixel defining layer (Bank) may be further formed on the first substrate 10, the pixel defining layer (not shown) has a plurality of pixel units arranged at intervals, two adjacent pixel units form a groove, and the organic electroluminescent device 300 is disposed in the groove.
In the embodiment of the present application, the electronic functional layer 30 may be an electronic functional layer 30 having both electron injection and electron transport functions, and may further include an electron injection sublayer 31 and an electron transport sublayer 32, and the organic electroluminescent device 300 in fig. 3 takes the example that the electronic functional layer 30 includes the electron injection sublayer 31 and the electron transport sublayer 32.
In the embodiment of the present application, the electron injection layer 31 is disposed on the cathode layer 20, and the material of the electron injection layer 31 is MgxZn1-xO, 0 < x < 0.56, preferably x has a value of 0.1, i.e. Mg is used0.1Zn0.9O forms the entire electron injection layer 31.
In the embodiment of the present application, the electron transport layer 32 is provided on the electron injection layer 31. The material of the electron transport layer 32 is MgxZn1-xO, 0 < x < 0.56, preferably x has a value of 0.1, i.e. Mg is used0.1Zn0.9O forms the entire electron transport layer 32.
In the embodiment of the present invention, the light-emitting layer 40 is disposed on the electron transport layer 32, and the light-emitting layer 40 includes red pixels, green pixels, and blue pixels for emitting red, green, and blue colors.
In the embodiment of the present application, the hole transport layer 51 is disposed on the light emitting layer 40, and the hole transport layer 51 is an organic hole transport material and has a hole carrier transport function.
In the embodiment of the present application, the hole injection layer 52 is disposed on the hole transport layer 51, and the hole injection layer 52 is an organic hole injection material and has a hole carrier transport and injection function.
In the present embodiment, the anode layer 60 is formed on the surface of the hole injection layer 52 on the side away from the light-emitting layer 40 by a film formation process such as sputtering or vapor deposition, and the anode layer 60 may have a single-layer structure or a multi-layer structure. The anode layer 60 may be made of a thin metal, such as silver, aluminum, platinum, copper, molybdenum, titanium, etc.; the anode layer 60 may also be made of transparent conductive oxide TCO such as indium tin oxide ITO, indium gallium zinc oxide IGZO, indium zinc oxide IZO, tin oxide SnO, etc. The thickness of the anode layer 60 is preferably 150 to 250 nm.
In this application, the cathode layer 20, the electronic functional layer 30, the light emitting layer 40, the hole transport layer 51, the hole injection layer 52, and the anode layer 60 may be prepared by vacuum evaporation, magnetron sputtering, ion plating, direct current sputtering, radio frequency sputtering, ion beam assisted deposition, plasma enhanced chemical vapor deposition, high density inductively coupled plasma source chemical vapor deposition, ion cluster beam deposition, metal organic chemical vapor deposition, catalytic chemical vapor deposition, laser pulse deposition, pulsed plasma method, pulsed laser method, electron beam evaporation, sol-gel method, inkjet printing, electroplating, and the like, which is not limited in this respect.
On one hand, the structure can solve the defect of low aperture ratio of the traditional light-emitting device, directly obtains light emission from the surface of the top semi-transparent electrode of the device, has almost no influence on the aperture ratio, and is beneficial to realizing a large-scale organic flat panel display with high information content, high display brightness and high resolution. On the other hand, the light emitting device can realize the narrowing of the spectrum, has selection on the emission wavelength and improves the color purity of the light emitting of the device.
As a specific embodiment of the present application, as shown in fig. 4, fig. 4 is a schematic diagram of a third structure of an organic electroluminescent device provided in an example of the present application. This embodiment is a modification based on the second embodiment. Among them, the organic electroluminescent device 400 shown in fig. 4 is different from the organic electroluminescent device 200 shown in fig. 2 in that: the organic electroluminescent device 400 shown in fig. 4 further includes: and a second substrate 11, wherein the second substrate 11 is arranged on the side of the anode layer 60 far away from the light-emitting layer 40.
The second substrate 11 has a good light transmittance in the visible light region, has a certain ability of preventing moisture and oxygen from penetrating, and has a good surface smoothness, the second substrate 11 may be, but is not limited to, a glass substrate, a flexible PI substrate, and the flexible PI substrate may be made of one of polyester and a polyphthalamide compound or a thin metal, which is not limited in the present invention.
In the present embodiment, the anode layer 60 is formed on the second substrate 11 by a film formation process such as sputtering or vapor deposition, and the anode layer 60 may have a single-layer structure or a multi-layer structure. The anode layer 60 may be made of a thin metal, such as silver, aluminum, platinum, copper, molybdenum, titanium, etc.; the anode layer 60 may also be made of transparent conductive oxide TCO such as indium tin oxide ITO, indium gallium zinc oxide IGZO, indium zinc oxide IZO, tin oxide SnO, etc. The thickness of the anode layer 60 is preferably 150 to 250 nm.
It should be noted that, before forming the anode layer 60, a pixel defining layer (Bank) may be further formed on the second substrate 11, the pixel defining layer (not shown) has a plurality of pixel units arranged at intervals, two adjacent pixel units form a groove, and the organic electroluminescent device 400 is disposed in the groove.
In the embodiment of the present application, the hole injection layer 52 is disposed on the anode layer 60, and the hole injection layer 52 is an organic hole injection material and has a hole carrier transporting and injecting function.
In the embodiment of the present application, the hole transport layer 51 is disposed on the hole injection layer 52, and the hole transport layer 51 is an organic hole transport material and has a hole carrier transport function.
In the embodiment of the present invention, the light-emitting layer 40 is disposed on the hole transport layer 51, and the light-emitting layer 40 includes red pixels, green pixels, and blue pixels for emitting red, green, and blue colors.
In the present embodiment, the electron transport layer 32 is provided on the light emitting layer 40. The material of the electron transport layer 32 is MgxZn1-xO, 0 < x < 0.56, preferably x has a value of 0.1, i.e. Mg is used0.1Zn0.9O forms the entire electron transport layer 32.
In the embodiment of the present application, the electron injection layer 31 is disposed on the electron transport layer 32, and the material of the electron injection layer 31 is MgxZn1-xO, 0 < x < 0.56, preferably x has a value of 0.1, i.e. Mg is used0.1Zn0.9O forms the entire electron injection layer 31.
Specifically, the electron injection layer 31 and the electron transport layer 32 may be formed by one or more of Metal Organic Chemical Vapor Deposition (MOCVD), Pulsed Laser Deposition (PLD), Molecular Beam Epitaxy (MBE), Magnetron Sputtering (MS), Ion Beam Sputtering (IBS), Co-evaporation (Co-evaporation), and Flash evaporation, which is not limited in the present invention.
In the embodiment of the present application, the electronic function layer 30 may include an electron injection sublayer 31 and an electron transport sublayer 32, or may be an electronic function layer 30 with both electron injection and electron transport functions, and the organic electroluminescent device 400 in fig. 4 takes the example that the electronic function layer 30 includes the electron injection sublayer 31 and the electron transport sublayer 32.
In the embodiment of the present disclosure, the cathode layer 20 is formed on the electron injection layer 31 by using a film forming process such as Plasma Enhanced Chemical Vapor Deposition (PECVD), sputtering or evaporation, wherein the cathode layer 20 is made of a transparent conductive oxide TCO, such as indium tin oxide ITO, indium gallium zinc oxide IGZO, indium zinc oxide IZO, tin oxide SnO, and the like, and the transparent conductive oxide TCO is transparent and has high electrical conductivity, which is beneficial to reducing optical loss. Wherein the thickness of the cathode layer 20 is preferably 80 to 150 nm.
In the present application, the anode layer 60, the hole injection layer 52, the hole transport layer 51, the light emitting layer 40, the electron transport layer 32, the electron injection layer 31, and the cathode layer 20 may be prepared by vacuum evaporation, magnetron sputtering, ion plating, direct current sputtering, radio frequency sputtering, ion beam assisted deposition, plasma enhanced chemical vapor deposition, high density inductively coupled plasma source chemical vapor deposition, ion cluster beam deposition, metal organic chemical vapor deposition, catalytic chemical vapor deposition, laser pulse deposition, pulsed plasma method, pulsed laser method, electron beam evaporation, sol-gel method, inkjet printing, electroplating, and the like, which is not limited in this respect.
On one hand, the structure can solve the defect of low aperture ratio of the traditional light-emitting device, directly obtains light emission from the surface of the top semi-transparent electrode of the device, has almost no influence on the aperture ratio, and is beneficial to realizing a large-scale organic flat panel display with high information content, high display brightness and high resolution. On the other hand, the light emitting device can realize the narrowing of the spectrum, has selection on the emission wavelength and improves the color purity of the light emitting of the device.
On the other hand, an embodiment of the present invention further provides a method for manufacturing an organic electroluminescent device, as shown in fig. 5, fig. 5 is a flowchart of a method for manufacturing an organic electroluminescent device provided in an embodiment of the present application, and includes the following steps:
in step S1, the cathode layer 20 is formed.
In the present embodiment, the cathode layer 20 is formed by a film formation process such as sputtering or evaporation.
In the embodiment of the present invention, the cathode layer 20 is made of a transparent conductive oxide TCO, such as indium tin oxide ITO, indium gallium zinc oxide IGZO, indium zinc oxide IZO, or tin oxide SnO, and preferably, the thickness of the cathode layer 20 is 80 to 150 nm.
In step S2, the electron functional layer 30 is formed on the cathode layer 20.
In the embodiment of the present application, the material of the electronic function layer 30 is MgxZn1-xO，0＜x＜0.56。
In the present embodiment, the entire Mg layer is formed on the cathode layer 20 by a film formation process such as evaporation or sputteringxZn1-xAn O thin film layer; the ratio of oxygen to argon is controlled to be 0.1-3.0 by controlling the oxygen ratio and the power, so that the formed MgxZn1-xThe O thin film layer has polycrystalline and defect characteristics; then exposing, developing, etching, stripping (Stripe) and other processes are carried out on MgxZn1-xThe O thin film layer is patterned to form the electronic function layer 30.
In the embodiments of the present application, preferably, MgxZn1-xThe value of x in O is 0.1.
In the embodiment of the present application, the film forming speed is 0.1 angstrom to 10 angstrom/second, the thickness of the electronic function layer 30 is 10 to 500 angstrom, and preferably, the thickness of the electronic function layer 30 is 500 angstrom.
In step S3, the light-emitting layer 40 is formed on the electron functional layer 30.
In the embodiment of the present application, the light emitting layer 40 is formed on the electronic function layer 30 by using a film forming process such as inkjet printing or evaporation, and the formed light emitting layer 40 has good film morphology and film thickness uniformity by controlling the drying of the vacuum chamber.
In the embodiment of the present application, the light-emitting layer 40 includes red pixels, green pixels, and blue pixels for emitting red, green, and blue colors.
In step S4, the anode layer 60 is formed on the light-emitting layer 40.
In the present embodiment, the anode layer 60 is formed on the light-emitting layer 40 by a film formation process such as sputtering or vapor deposition.
In the embodiment, the anode layer 60 may be made of a thin metal, such as silver, aluminum, platinum, copper, molybdenum, titanium, etc.; the anode layer 60 may also be made of transparent conductive oxide TCO such as indium tin oxide ITO, indium gallium zinc oxide IGZO, indium zinc oxide IZO, tin oxide SnO, etc.
In the present embodiment, anode layer 60 may have a single-layer structure or a multi-layer structure. The anode layer 60 has a thickness of 150 to 250 nm.
The organic electroluminescent device prepared by the method has high light transmittance, less dialysis among layers, stable performance and long service life.
It should be noted that the organic electroluminescent device 100 provided in the embodiment of the present invention may be an OLED, an inorganic light emitting diode, an organic solar cell, an inorganic solar cell, an organic thin film transistor, an inorganic thin film transistor, a photodetector, and the like, which is not limited in this respect.
The organic electroluminescent device and the method for manufacturing the same provided by the embodiments of the present application are described in detail above, and the principles and embodiments of the present application are explained herein by applying specific examples, and the description of the above embodiments is only used to help understanding the method and the core concept of the present application; meanwhile, for those skilled in the art, according to the idea of the present application, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present application.

Claims (10)

1. An organic electroluminescent device, comprising:
a cathode layer;
a light emitting layer disposed on the cathode layer;
an anode layer disposed on the light emitting layer; wherein the content of the first and second substances,
the organic electroluminescent device also comprises an electronic function layer, the electronic function layer is arranged between the cathode layer and the light-emitting layer, and the material of the electronic function layer is MgxZn1-xO，0＜x＜0.56。
2. The organic electroluminescent device of claim 1, wherein the electronically functional layer has a resistivity of less than 1 ohm-cm.
3. The organic electroluminescent device according to claim 1, wherein the carrier concentration of the electron functional layer is not less than 1.0 x 1017Per cubic centimeter, and the carrier mobility of the electronic functional layer is greater than 1 square centimeter/(volt-second).
4. The organic electroluminescent device according to claim 1, wherein the thickness of the electron functional layer is 10 to 500 angstroms and the film forming speed is 0.1 to 10 angstroms/second.
5. The organic electroluminescent device according to claim 1, wherein the Mg is presentxZn1-xX in O is 0.1.
6. The organic electroluminescent device according to claim 1, further comprising: the first substrate is arranged on one side, far away from the light emitting layer, of the cathode layer.
7. The organic electroluminescent device according to claim 1, further comprising: and the second substrate is arranged on one side of the anode layer, which is far away from the light-emitting layer.
8. The organic electroluminescent device according to claim 1, wherein the electronically functional layer comprises:
an electron injection layer disposed on the cathode layer;
an electron transport layer disposed between the electron injection layer and the light emitting layer; wherein the material of the electron transport layer is MgxZn1-xO，0＜x＜0.56。
9. The organic electroluminescent device according to any one of claims 1 to 8, further comprising a hole transport layer provided on the light-emitting layer, and a hole injection layer provided between the hole transport layer and the anode layer.
10. A preparation method of an organic electroluminescent device is characterized by comprising the following steps:
forming a cathode layer;
forming an electronic function layer on the cathode layer, wherein the electronic function layer is made of MgxZn1-xO，0＜x＜0.56；
Forming a light emitting layer on the electron function layer;
an anode layer is formed on the light emitting layer.
CN202111037006.2A 2021-09-06 2021-09-06 Organic electroluminescent device and preparation method thereof Pending CN113764596A (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009295868A (en) * 2008-06-06 2009-12-17 Rohm Co Ltd Oxide conductive film
KR20150001319A (en) * 2013-06-27 2015-01-06 엘지디스플레이 주식회사 Organic Light Emitting Diode Display Device and Method for Manufacturing The Same
CN109980108A (en) * 2017-12-28 2019-07-05 Tcl集团股份有限公司 Electroluminescent device and its manufacturing method, display device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009295868A (en) * 2008-06-06 2009-12-17 Rohm Co Ltd Oxide conductive film
KR20150001319A (en) * 2013-06-27 2015-01-06 엘지디스플레이 주식회사 Organic Light Emitting Diode Display Device and Method for Manufacturing The Same
CN109980108A (en) * 2017-12-28 2019-07-05 Tcl集团股份有限公司 Electroluminescent device and its manufacturing method, display device

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