CN113759152A - Magnetic field controlled measurement method of magnetic nanowires - Google Patents
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- 230000005291 magnetic effect Effects 0.000 title claims abstract description 164
- 239000002070 nanowire Substances 0.000 title claims abstract description 131
- 238000000691 measurement method Methods 0.000 title description 3
- 238000005530 etching Methods 0.000 claims abstract description 23
- 238000001259 photo etching Methods 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 18
- 238000004519 manufacturing process Methods 0.000 claims abstract description 11
- 238000002360 preparation method Methods 0.000 claims abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 67
- 229910052710 silicon Inorganic materials 0.000 claims description 67
- 239000010703 silicon Substances 0.000 claims description 67
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 54
- 238000000151 deposition Methods 0.000 claims description 26
- 230000008021 deposition Effects 0.000 claims description 20
- 239000008367 deionised water Substances 0.000 claims description 14
- 229910021641 deionized water Inorganic materials 0.000 claims description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 14
- 239000011521 glass Substances 0.000 claims description 12
- 238000004140 cleaning Methods 0.000 claims description 11
- 239000011248 coating agent Substances 0.000 claims description 11
- 238000000576 coating method Methods 0.000 claims description 11
- 238000004070 electrodeposition Methods 0.000 claims description 11
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- 229910052786 argon Inorganic materials 0.000 claims description 8
- -1 argon ions Chemical class 0.000 claims description 8
- 238000001035 drying Methods 0.000 claims description 8
- 238000010884 ion-beam technique Methods 0.000 claims description 8
- 239000000725 suspension Substances 0.000 claims description 8
- 239000003292 glue Substances 0.000 claims description 7
- 239000008139 complexing agent Substances 0.000 claims description 6
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 6
- 238000002156 mixing Methods 0.000 claims description 6
- 230000003287 optical effect Effects 0.000 claims description 6
- 239000002904 solvent Substances 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 5
- 241000080590 Niso Species 0.000 claims description 2
- 239000007888 film coating Substances 0.000 claims description 2
- 238000009501 film coating Methods 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000007788 liquid Substances 0.000 claims description 2
- 239000001509 sodium citrate Substances 0.000 claims description 2
- 238000001338 self-assembly Methods 0.000 abstract 1
- 238000005259 measurement Methods 0.000 description 9
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 7
- 239000010408 film Substances 0.000 description 6
- XLYOFNOQVPJJNP-ZSJDYOACSA-N heavy water Substances [2H]O[2H] XLYOFNOQVPJJNP-ZSJDYOACSA-N 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 150000003839 salts Chemical class 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 description 2
- 230000005294 ferromagnetic effect Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- 101000619542 Homo sapiens E3 ubiquitin-protein ligase parkin Proteins 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 235000006708 antioxidants Nutrition 0.000 description 1
- 229960005070 ascorbic acid Drugs 0.000 description 1
- 235000010323 ascorbic acid Nutrition 0.000 description 1
- 239000011668 ascorbic acid Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004720 dielectrophoresis Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 238000012576 optical tweezer Methods 0.000 description 1
- 102000045222 parkin Human genes 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 230000005476 size effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Abstract
A magnetic field controlled magnetic nanowire measuring method comprises the following steps of sequentially configuring a magnetic nanowire preparation solution, preparing and dispersing magnetic nanowires, photoetching and etching for manufacturing finger-shaped electrodes, building an operation platform, bridging the magnetic nanowires, and finally observing and measuring the magnetic nanowires: the magnetic nanowires are guided and arranged by a magnetic field to realize self-assembly (bridging) of the magnetic nanowires on the finger-shaped electrodes, wherein the magnetic field is a directional magnetic field and has a magnitude of 30-500 mT. The width of the strip electrode unit of the finger electrode is 2-10 μm, and the length is 50-200 μm. The invention measures the magnetic nanowire by using the finger-shaped electrode, and has the advantages of simple operation, simple experimental conditions, easy realization and controllable direction.
Description
Technical Field
The invention belongs to the field of nano materials, and particularly relates to a magnetic field controlled magnetic nanowire measuring method.
Background
The magnetic nanowire has abundant physical properties, many alloy materials show excellent magnetic and electrical properties when in the form of bulk and thin film, and after the form of the magnetic nanowire is developed into the nanowire, many special properties such as quantum size effect, surface effect, macroscopic quantum tunneling effect and volume effect appear, and the following properties such as electrical, magnetic and thermal properties are changed. Magnetic nanowires have wide application in high-density perpendicular magnetic recording, sensors, and giant magnetoresistance devices, and a magnetic domain wall racetrack memory based on magnetic nanowires is proposed by Stuart s.p. Parkin 2008, and the like.
At present, the electrical properties of the nanowires are mostly characterized by bridging by using expensive equipment or complex technology, such as Atomic Force Microscope (AFM), Scanning Tunneling Microscope (STM), optical tweezers, micromanipulators and other equipment, and performing micromanipulation of single nanowires by methods such as dielectrophoresis and shearing force. The existing observation equipment can only carry out microscopic observation on the magnetic nanowire and cannot measure parameters (such as length) of the magnetic nanowire. The prior patent document CN 112957371 a discloses a "method for preparing magnetic nanowires", which is a technical scheme that two electrodes are used to deposit and grow magnetic nanowires, wherein the magnetic nanowires are directly grown on the electrodes, and the morphology of the prepared magnetic nanowires cannot be controlled or measured.
Disclosure of Invention
In view of the technical problems existing in the background art, the magnetic field control magnetic nanowire measuring method provided by the invention utilizes the cylindrical magnet or the coil capable of generating the directional magnetic field to provide the magnetic field, so that the magnetic nanowires are self-assembled on the finger-shaped electrodes to realize bridging.
In order to solve the technical problems, the invention adopts the following technical scheme to realize:
a method of measuring magnetic field-controlled magnetic nanowires, comprising the steps of:
s1: preparing a magnetic nanowire preparation solution: adding NiSO into deionized water as solvent4·6H2O main liquid, H3BO3Buffer and Na3C6H5O7·2H2Preparing solution with O complexing agent, mixing, and adding H2SO4Adjusting the pH value of the solution and NaOH solution to 2-3;
s2: preparing and dispersing magnetic nanowires: depositing magnetic nanowires in an anodic alumina template by constant current pulse electrodeposition, wherein the deposition current is 10-50 mA, the deposition temperature is 40-50 ℃, the deposition time is 20-40 minutes, and after the deposition is finished, the anodic alumina template is soaked in NaOH with the concentration of 0.9-1.1 mol/L for 2-4 hours at the temperature of 60-70 ℃; finally, replacing the NaOH solution with absolute ethyl alcohol for 5-7 times;
s3: photoetching and etching a finger electrode, wherein the finger electrode comprises a plurality of strip electrode units which are parallel to each other and are arranged at equal intervals, the width of a single strip electrode unit is taken as the reference width, and two adjacent strip electrode units are connected end to form a continuous wave-shaped structure; the finger electrode manufacturing steps are as follows:
s3.1: film coating: cleaning a silicon wafer, and sputtering a Ta/Cu/Au or Cr/Cu/Au three-layer film on the silicon wafer by using a magnetron sputtering system;
s3.2: photoetching: pre-baking the silicon wafer by using a constant temperature platform, and coating positive glue by using a suspension coater; drying by using a constant temperature table; carrying out alignment exposure on the silicon wafer by using an ultraviolet photoetching machine and a finger-shaped electrode mask plate with a reference width, then placing the exposed silicon wafer into a developing solution, cleaning the silicon wafer by using deionized water, and observing the developing condition by using a microscope;
s3.3: etching: vacuumizing a cavity of an ion beam etching machine, bombarding the surface of a silicon wafer by using argon ions, stopping for 5-6 minutes every 2-3 minutes, bombarding twice, and finally taking out the silicon wafer to finish electrode manufacturing;
s4: building an operation platform: firstly, adhering a silicon wafer with electrodes to a glass slide or a non-magnetic thin sheet, wherein a strip-shaped electrode unit of a finger-shaped electrode is vertical to a fixed magnetic field provided by a magnet or a coil, and then fixing the glass slide on the magnet or in the coil;
s5: bridging of the magnetic nanowires: sucking 5-10 mu L of magnetic nanowire solution, and dripping the magnetic nanowire solution on the strip-shaped electrode units of the finger-shaped electrodes;
s6: observing the state of the magnetic nanowires by using a microscope, and obtaining the length of each magnetic nanowire according to the number of the single magnetic nanowire crossing the strip-shaped electrode units.
Preferably, in step S3.1, the thickness of each plated film is 10 nm.
Preferably, in step S3, the finger electrode is formed with a strip electrode unit width of 2-10 μm and a strip electrode unit length of 50-200 μm.
Preferably, in step S3.2, the silicon wafer is pre-baked for 60S by using a 110 ℃ constant temperature stage, then the positive photoresist is coated by using a suspension coater, and the silicon wafer is dried for 90S by using the constant temperature stage at the temperature of 110 ℃; and (3) carrying out alignment exposure on the silicon wafer by using an ultraviolet photoetching machine and a finger-shaped electrode mask plate with the reference width of 7 mu m, then placing the exposed silicon wafer in a developing solution for 20 seconds, cleaning the silicon wafer by using deionized water, and observing the developing condition by using a microscope.
Preferably, in step S3.3, etching: firstly, the cavity of the ion beam etching machine is vacuumized to 5 multiplied by 10-4And pa, bombarding the surface of the silicon wafer by using the reutilized argon ions, stopping 5 minutes every 2 minutes of bombardment, bombarding twice, and finally taking out the silicon wafer to finish the electrode manufacturing.
Preferably, in step S4, the magnetic field generating device is a cylindrical magnet or a coil capable of generating a directional magnetic field.
Preferably, in step S6, the finger electrode position is observed by x 10 times of the optical microscope to determine the focal distance; and observing the bridging condition of the electrode and the magnetic nanowire by sequentially passing through a multiplied by 20, a multiplied by 50 and a multiplied by 100 mirror, and calculating the length of the single magnetic nanowire according to the number of the single magnetic nanowire crossing the strip-shaped electrode unit after observing the clear single magnetic nanowire.
This patent can reach following beneficial effect:
1. the invention utilizes the guiding and arranging function of the magnetic field to the magnetic nano-wire, and utilizes the columnar magnet or the coil which can generate the directional magnetic field to provide the magnetic field, so that the magnetic nano-wire is self-assembled on the finger-shaped electrode to realize bridging.
2. The invention is mainly designed for electrical measurement, and because the electrical measurement of a single magnetic nanowire is very difficult, the single magnetic nanowire is difficult to separate, and a test electrode is difficult to be made on the single magnetic nanowire. The method provided by the invention directly puts the magnetic nanowires on the finger-shaped electrode, and takes the finger-shaped electrode as a measurement reference object or a measurement benchmark object, thereby overcoming the problem that a single magnetic nanowire is difficult to carry out electrical measurement.
Drawings
The invention is further illustrated by the following examples in conjunction with the accompanying drawings:
FIG. 1 is a schematic view of a bridge device according to the present invention;
FIG. 2 is an SEM image of ferromagnetic nanowires of the present invention;
FIG. 3 is a schematic view of a finger electrode prepared in example 1 of the present invention;
fig. 4 is a schematic view of the strip-shaped electrode units of the finger-mounted electrodes and the magnetic flux lines in the embodiment 1 of the present invention (in which the magnetic nanowires are parallel to the magnetic flux lines);
FIG. 5 is a bridge diagram of magnetic nanowires on finger electrodes in example 1 of the present invention.
Detailed Description
Example 1:
a method of measuring magnetic field-controlled magnetic nanowires, comprising the steps of:
1. and preparing a magnetic nanowire preparation solution.
Deionized water is used as a solvent, and 0.1 mol.L-1NiSO (D)4·6H2O is main salt, 0.5 mol.L-1H of (A) to (B)3BO3Buffer, 0.03 mol. L-1Na of (2)3C6H5O7·2H2O is complexing agent, NaOH or H is used after fully mixing2SO4The solution was adjusted to pH 3 and the total solution volume was 100 mL.
2. And (3) preparing and dispersing the magnetic nanowires.
Depositing magnetic nanowires in an anodic aluminum oxide template (AAO) with the aperture of 40-100 nm by constant-current pulse electrodeposition under the process conditions of 50 mA of deposition current, 30 minutes of deposition time and Ton/ToffIs 0.5s/0.5 s, the T isonFor the time of energization, ToffIs the power-off time; the temperature was 40 ℃. After the deposition is finished, the AAO template containing the magnetic nanowires is placed in 1mol/L NaOH to be soaked for 4 hours at the temperature of 70 ℃. And finally, attracting the magnetic nanowires by using a magnet, and replacing the NaOH solution by absolute ethyl alcohol for 7 times by using a liquid-transferring gun.
The magnetic nanowires are iron nanowires or nickel iron nanowires or other nanowires which are ferromagnetic at room temperature, the length of the prepared magnetic nanowires is 5-40 mu m, and the diameter of the prepared magnetic nanowires is 40-300 nm.
3. And photoetching and etching the finger electrodes.
And (6) coating. The silicon wafer is ultrasonically cleaned by acetone and absolute ethyl alcohol for 10 minutes in sequence, and then is dried by a nitrogen gun. Sputtering a Ta (10 nm)/Cu (10 nm)/Au (10 nm) three-layer film on a silicon chip by using a magnetron sputtering system; and (6) photoetching. Pre-baking the silicon wafer for 60 seconds by using a constant temperature table at 110 ℃, coating positive glue by using a suspension coater, and drying for 90 seconds at 110 ℃ by using the constant temperature table. Carrying out alignment exposure on the silicon wafer by using an ultraviolet photoetching machine and a 7-micron finger-shaped electrode mask plate, then placing the exposed silicon wafer in a developing solution for 20 seconds, cleaning the silicon wafer by using deionized water, and observing the developing condition by using a microscope; and (5) etching. Firstly, the cavity of the ion beam etching machine is vacuumized to 5 multiplied by 10-4And pa, bombarding the surface of the silicon wafer by using the reutilized argon ions, stopping 5 minutes every 2 minutes of bombardment, bombarding twice, and finally taking out the silicon wafer to finish the electrode manufacturing.
4. And (5) building an operation platform.
Firstly, adhering a silicon wafer with electrodes on a glass slide or a non-magnetic thin sheet, wherein the strip-shaped electrode units of the finger-shaped electrodes are perpendicular to a fixed magnetic field provided by a magnet or a coil, and then fixing the glass slide on the magnet or in the coil.
5. Bridging of the magnetic nanowires.
And sucking 10 mu L of magnetic nanowire solution by using a pipette gun, aligning the magnetic nanowire solution to the strip-shaped electrode units of the finger-shaped electrodes, contacting the magnetic nanowire solution, and extruding about 5 mu L of magnetic nanowire solution by using the pipette gun.
6. Observation and measurement of magnetic nanowires.
The focal length was determined by observing the finger electrode position with an optical microscope at x 10 times magnification. And observing the bridging condition of the electrode and the magnetic nanowire by sequentially passing through a multiplied by 20, a multiplied by 50 and a multiplied by 100 mirror. The length of a single magnetic nanowire is calculated according to the number of the single magnetic nanowire crossing the strip-shaped electrode units, for example, the single magnetic nanowire just crosses two strip-shaped electrode units (for example, the magnetic nanowire at the right side in fig. 5), the width of the single strip-shaped electrode unit is 7 μm, the distance between the two strip-shaped electrode units is 7 μm, and the length of the single magnetic nanowire is 3 times of 7 μm, that is, 21 μm. As shown in the left magnetic nanowire in fig. 5 as an example, a single magnetic nanowire is on the strip-shaped electrode unit, and both ends of the single magnetic nanowire exceed the strip-shaped electrode unit by a distance, then the single magnetic nanowire is estimated to be approximately equal to two times 7 μm, i.e. 14 μm. The measurement method of the other examples below was the same as in example 1.
Example 2:
1. and preparing a magnetic nanowire preparation solution.
Deionized water is used as a solvent, and 0.05 mol.L-1NiSO (D)4·6H2O is main salt, 0.4 mol.L-1H of (A) to (B)3BO3Buffer, 0.01 mol. L-1Na of (2)3C6H5O7·2H2O is complexing agent, NaOH or H is used after fully mixing2SO4The solution was adjusted to pH 2.5 and the total solution volume was 100 mL.
2. And preparing and dispersing the magnetic nanowires.
Depositing magnetic nanowires in an anodic alumina template (AAO) with the aperture of 280-300 nm by constant current pulse electrodepositionThe technological conditions are that the deposition current is 20 mA, the deposition time is 40 minutes, and T ison/ToffAt a temperature of 40 ℃ for 1 s/1 s. After deposition, the AAO template containing the magnetic nanowires is placed in 1mol/L NaOH to be soaked for 4 hours at the temperature of 60-70 ℃. And finally, attracting the magnetic nanowires by using a magnet, and replacing the NaOH solution by absolute ethyl alcohol for 7 times by using a liquid-transferring gun.
3. And photoetching and etching the finger electrodes.
And (6) coating. The silicon wafer is ultrasonically cleaned by acetone and absolute ethyl alcohol for 10 minutes in sequence, and then is dried by a nitrogen gun. Sputtering a Cr (10 nm)/Cu (10 nm)/Au (10 nm) three-layer film on a silicon chip by using a magnetron sputtering system; and (6) photoetching. Pre-baking the silicon wafer for 60 seconds by using a constant temperature table at 110 ℃, coating positive glue by using a suspension coater, and drying for 90 seconds at 110 ℃ by using the constant temperature table. Carrying out alignment exposure on the silicon wafer by using an ultraviolet photoetching machine and a 7-micron finger-shaped electrode mask plate, then placing the exposed silicon wafer in a developing solution for 20 seconds, cleaning the silicon wafer by using deionized water, and observing the developing condition by using a microscope; and (5) etching. Firstly, the cavity of the ion beam etching machine is vacuumized to 5 multiplied by 10-4And pa, bombarding the surface of the silicon wafer by using the reutilized argon ions, stopping 5 minutes every 2 minutes of bombardment, bombarding twice, and finally taking out the silicon wafer to finish the electrode manufacturing.
4. And (5) building an operation platform.
Firstly, adhering a silicon wafer with electrodes on a glass slide or a non-magnetic thin sheet, wherein the strip-shaped electrode units of the finger-shaped electrodes are perpendicular to a fixed magnetic field provided by a magnet or a coil, and then fixing the glass slide on the magnet or in the coil.
5. Bridging of the magnetic nanowires.
And sucking 5 mu L of magnetic nanowire solution by using a pipette gun, aligning the magnetic nanowire solution to the strip-shaped electrode units of the finger-shaped electrodes, contacting the magnetic nanowire solution, and extruding about 3 mu L of magnetic nanowire solution by using the pipette gun.
6. Observation and measurement of magnetic nanowires.
The focal length was determined by observing the finger electrode position with an optical microscope at x 10 times magnification. And observing the bridging condition of the electrode and the magnetic nanowire by sequentially passing through a multiplied by 20, a multiplied by 50 and a multiplied by 100 mirror.
Example 3:
1. and preparing iron nanowire preparation solution.
Deionized water is used as a solvent, and 0.04 mol.L-1FeSO of (2)4·7H2O is main salt, 0.4 mol.L-1H of (A) to (B)3BO3Buffer, 0.01 mol. L-1Na of (2)3C6H5O7·2H2O is complexing agent, NaOH or H is used after fully mixing2SO4The solution was adjusted to pH 2.5 and the total solution volume was 100 mL.
2. And preparing and dispersing the iron nanowire.
Depositing iron nanowires in an anodic aluminum oxide template (AAO) with the aperture of 280-300 nm by constant-current pulse electrodeposition under the process conditions of 50 mA of deposition current, 30 minutes of deposition time and Ton/ToffAt a temperature of 40 ℃ for 1 s/1 s. After the deposition is finished, the AAO template containing the magnetic nanowires is placed in 1mol/L NaOH to be soaked for 4 hours at the temperature of 70 ℃. And finally, attracting the magnetic nanowires by using a magnet, and replacing the NaOH solution by absolute ethyl alcohol for 7 times by using a liquid-transferring gun.
3. And photoetching and etching the finger electrodes.
And (6) coating. The silicon wafer is ultrasonically cleaned by acetone and absolute ethyl alcohol for 10 minutes in sequence, and then is dried by a nitrogen gun. Sputtering a Ta (10 nm)/Cu (10 nm)/Au (10 nm) three-layer film on a silicon chip by using a magnetron sputtering system; and (6) photoetching. Pre-baking the silicon wafer for 60 seconds by using a constant temperature table at 110 ℃, coating positive glue by using a suspension coater, and drying for 90 seconds at 110 ℃ by using the constant temperature table. Carrying out alignment exposure on the silicon wafer by using an ultraviolet photoetching machine and a 7-micron finger-shaped electrode mask plate, then placing the exposed silicon wafer in a developing solution for 20 seconds, cleaning the silicon wafer by using deionized water, and observing the developing condition by using a microscope; and (5) etching. Firstly, the cavity of the ion beam etching machine is vacuumized to 5 multiplied by 10-4And pa, bombarding the surface of the silicon wafer by using the reutilized argon ions, stopping 5 minutes every 2 minutes of bombardment, bombarding twice, and finally taking out the silicon wafer to finish the electrode manufacturing.
4. And (5) building an operation platform.
Firstly, adhering a silicon wafer with electrodes on a glass slide or a non-magnetic thin sheet, wherein the strip-shaped electrode units of the finger-shaped electrodes are perpendicular to a fixed magnetic field provided by a magnet or a coil, and then fixing the glass slide on the magnet or in the coil.
5. Bridging of the magnetic nanowires.
And sucking 5 mu L of magnetic nanowire solution by using a pipette gun, aligning the magnetic nanowire solution to the strip-shaped electrode units of the finger-shaped electrodes, contacting the magnetic nanowire solution, and extruding about 3 mu L of magnetic nanowire solution by using the pipette gun.
6. Observation and measurement of magnetic nanowires.
The focal length was determined by observing the finger electrode position with an optical microscope at x 10 times magnification. And observing the bridging condition of the electrode and the magnetic nanowire by sequentially passing through a multiplied by 20, a multiplied by 50 and a multiplied by 100 mirror.
Example 4:
1. and preparing a nickel-iron nanowire preparation solution.
Deionized water is used as a solvent, and 0.93 mol.L-1NiSO (D)4·6H2O and 0.25 mol. L-1FeSO of (2)4·7H2O is main salt, 0.7 mol.L-1H of (A) to (B)3BO3Is a buffer, 0.085 mol.L-1Na of (2)3C6H5O7·2H2O is a complexing agent, 0.02 mol.L-1The ascorbic acid is antioxidant, mixing, and adding NaOH or H2SO4The solution was adjusted to pH 2.5 and the total solution volume was 100 mL.
2. And (4) preparing and dispersing the nickel-iron nanowires.
Depositing iron nanowires in an anodic aluminum oxide template (AAO) with the aperture of 40-70 nm by constant-current pulse electrodeposition under the process conditions of 50 mA of deposition current, 30 minutes of deposition time and Ton/Toff0.05 s/0.05 s at 50 ℃. After the deposition is finished, the AAO template containing the magnetic nanowires is placed in 1mol/L NaOH to be soaked for 4 hours at the temperature of 70 ℃. And finally, attracting the magnetic nanowires by using a magnet, and replacing the NaOH solution by absolute ethyl alcohol for 7 times by using a liquid-transferring gun.
3. And photoetching and etching the finger electrodes.
And (6) coating. Firstly, sequentially ultrasonically cleaning by using acetone and absolute ethyl alcoholThe silicon wafer is dried for 10 minutes by a nitrogen gun. Sputtering a Cr (10 nm)/Cu (10 nm)/Au (10 nm) three-layer film on a silicon chip by using a magnetron sputtering system; and (6) photoetching. Pre-baking the silicon wafer for 60 seconds by using a constant temperature table at 110 ℃, coating positive glue by using a suspension coater, and drying for 90 seconds at 110 ℃ by using the constant temperature table. Carrying out alignment exposure on the silicon wafer by using an ultraviolet photoetching machine and a 7-micron finger-shaped electrode mask plate, then placing the exposed silicon wafer in a developing solution for 20 seconds, cleaning the silicon wafer by using deionized water, and observing the developing condition by using a microscope; and (5) etching. Firstly, the cavity of the ion beam etching machine is vacuumized to 5 multiplied by 10-4And pa, bombarding the surface of the silicon wafer by using the reutilized argon ions, stopping 5 minutes every 2 minutes of bombardment, bombarding twice, and finally taking out the silicon wafer to finish the electrode manufacturing.
4. And (5) building an operation platform.
Firstly, adhering a silicon wafer with electrodes on a glass slide or a non-magnetic thin sheet, wherein the strip-shaped electrode units of the finger-shaped electrodes are perpendicular to a fixed magnetic field provided by a magnet or a coil, and then fixing the glass slide on the magnet or in the coil.
5. Bridging of the magnetic nanowires.
And sucking 5 mu L of magnetic nanowire solution by using a pipette gun, aligning the magnetic nanowire solution to the strip-shaped electrode units of the finger-shaped electrodes, contacting the magnetic nanowire solution, and extruding about 3 mu L of magnetic nanowire solution by using the pipette gun.
6. Observation and measurement of magnetic nanowires.
The focal length was determined by observing the finger electrode position with an optical microscope at x 10 times magnification. And observing the bridging condition of the electrode and the magnetic nanowire by sequentially passing through a multiplied by 20, a multiplied by 50 and a multiplied by 100 mirror.
The above-described embodiments are merely preferred embodiments of the present invention, and should not be construed as limiting the present invention, and the scope of the present invention is defined by the claims, and equivalents including technical features described in the claims. I.e., equivalent alterations and modifications within the scope hereof, are also intended to be within the scope of the invention.
Claims (7)
1. A method of measuring magnetic nanowires controlled by a magnetic field, comprising the steps of:
s1: preparing a magnetic nanowire preparation solution: adding NiSO into deionized water as solvent4·6H2O main liquid, H3BO3Buffer and Na3C6H5O7·2H2Preparing solution with O complexing agent, mixing, and adding H2SO4Adjusting the pH value of the solution and NaOH solution to 2-3;
s2: preparing and dispersing magnetic nanowires: depositing magnetic nanowires in an anodic alumina template by constant current pulse electrodeposition, wherein the deposition current is 10-50 mA, the deposition temperature is 40-50 ℃, the deposition time is 20-40 minutes, and after the deposition is finished, the anodic alumina template is soaked in NaOH with the concentration of 0.9-1.1 mol/L for 2-4 hours at the temperature of 60-70 ℃; finally, replacing the NaOH solution with absolute ethyl alcohol for 5-7 times;
s3: photoetching and etching a finger electrode, wherein the finger electrode comprises a plurality of strip electrode units which are parallel to each other and are arranged at equal intervals, the width of a single strip electrode unit is taken as the reference width, and two adjacent strip electrode units are connected end to form a continuous wave-shaped structure; the finger electrode manufacturing steps are as follows:
s3.1: film coating: cleaning a silicon wafer, and sputtering a Ta/Cu/Au or Cr/Cu/Au three-layer film on the silicon wafer by using a magnetron sputtering system;
s3.2: photoetching: pre-baking the silicon wafer by using a constant temperature platform, and coating positive glue by using a suspension coater; drying by using a constant temperature table; carrying out alignment exposure on the silicon wafer by using an ultraviolet photoetching machine and a finger-shaped electrode mask plate with a reference width, then placing the exposed silicon wafer into a developing solution, cleaning the silicon wafer by using deionized water, and observing the developing condition by using a microscope;
s3.3: etching: vacuumizing a cavity of an ion beam etching machine, bombarding the surface of a silicon wafer by using argon ions, stopping for 5-6 minutes every 2-3 minutes, bombarding twice, and finally taking out the silicon wafer to finish electrode manufacturing;
s4: building an operation platform: firstly, adhering a silicon wafer with electrodes to a glass slide or a non-magnetic thin sheet, wherein a strip-shaped electrode unit of a finger-shaped electrode is vertical to a fixed magnetic field provided by a magnet or a coil, and then fixing the glass slide on the magnet or in the coil;
s5: bridging of the magnetic nanowires: sucking 5-10 mu L of magnetic nanowire solution, and dripping the magnetic nanowire solution on the strip-shaped electrode units of the finger-shaped electrodes;
s6: observing the state of the magnetic nanowires by using a microscope, and obtaining the length of each magnetic nanowire according to the number of the single magnetic nanowire crossing the strip-shaped electrode units.
2. The method of measuring magnetic field-controlled magnetic nanowires of claim 1, wherein: in step S3.1, the thickness of each plated film is 10 nm.
3. The method of measuring magnetic field-controlled magnetic nanowires of claim 1, wherein: in step S3, the finger electrodes are formed with a strip electrode unit width of 2-10 μm and a strip electrode unit length of 50-200 μm.
4. The method of measuring magnetic field-controlled magnetic nanowires of claim 1, wherein: in the step S3.2, pre-drying the silicon wafer for 60S by using a 110 ℃ constant temperature platform, coating positive glue by using a suspension coater, and drying for 90S by using the 110 ℃ constant temperature platform; and (3) carrying out alignment exposure on the silicon wafer by using an ultraviolet photoetching machine and a finger-shaped electrode mask plate with the reference width of 7 mu m, then placing the exposed silicon wafer in a developing solution for 20 seconds, cleaning the silicon wafer by using deionized water, and observing the developing condition by using a microscope.
5. The method of measuring magnetic field-controlled magnetic nanowires of claim 1, wherein: in step S3.3, etching: firstly, the cavity of the ion beam etching machine is vacuumized to 5 multiplied by 10-4And pa, bombarding the surface of the silicon wafer by using the reutilized argon ions, stopping 5 minutes every 2 minutes of bombardment, bombarding twice, and finally taking out the silicon wafer to finish the electrode manufacturing.
6. The method of measuring magnetic field-controlled magnetic nanowires of claim 1, wherein: in step S4, the magnetic field generating device is selected from a cylindrical magnet or a coil capable of generating a directional magnetic field.
7. The method of measuring magnetic field-controlled magnetic nanowires of claim 1, wherein: in step S6, the finger electrode position is observed by the x 10 times lens of the optical microscope to determine the focal length; and observing the bridging condition of the electrode and the magnetic nanowire by sequentially passing through a multiplied by 20, a multiplied by 50 and a multiplied by 100 mirror, and calculating the length of the single magnetic nanowire according to the number of the single magnetic nanowire crossing the strip-shaped electrode unit after observing the clear single magnetic nanowire.
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