CN113759126B - α-突触核蛋白感测薄膜及其制造方法与用途 - Google Patents
α-突触核蛋白感测薄膜及其制造方法与用途 Download PDFInfo
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Abstract
本发明关于一种α‑突触核蛋白感测薄膜及其制造方法与用途,其中α‑突触核蛋白感测薄膜包含一基板以及聚合于所述基板上的多个α‑突触核蛋白辨识聚合物,每一α‑突触核蛋白辨识聚合物表面具有多个可辨识α‑突触核蛋白的微孔洞;所述α‑突触核蛋白辨识聚合物是通过电聚合法制成,且表面的微孔洞是利用α‑突触核蛋白多肽印迹所获得;将一样本与上述的α‑突触核蛋白感测薄膜反应,便可以检测样本中的α‑突触核蛋白。
Description
技术领域
本发明是关于一种α-突触核蛋白感测薄膜及其制造方法与用途,是使用α-突触核蛋白印迹于高分子聚合物上,以制得α-突触核蛋白感测薄膜,并用于检测样本中的α-突触核蛋白。
背景技术
α-突触核蛋白(α-synuclein)在人脑组织中的含量高,其在细胞中主要分布于神经细胞的尖端,目前认为α-突触核蛋白与调节多巴胺(dopamine)的释放有关。正常的α-突触核蛋白为可溶性蛋白,但是发生变异后的α-突触核蛋白会大量堆积在神经元内部,且无法被清除,进而影响到脑部的正常功能,甚至会使神经元大量死亡;目前认为α-突触核蛋白与多种神经性退化疾病,例如巴金森氏症(Parkinson’s disease)、路易氏体失智症(dementia with Lewy bodies)或是多发性系统萎缩症(multiple system atrophy)都有关连性。
现今检测血清或血浆中α-突触核蛋白的方法主要是利用抗体检测α-突触核蛋白,例如CN109001452A公开揭露了一种α-突触核蛋白积聚的检测探针,是以磁性颗粒为载体,并在其表面连接α-突触核蛋白单株抗体,以合成一种可检测帕金森氏病的探针;CN109180812A公开揭露了一种识别α-突触核蛋白的抗体,此抗体会结合到α-突触核蛋白的第118~126氨基酸,以诊断α-突触核蛋白的相关疾病。然而,抗体的筛选与制备不易,且以抗体检测α-突触核蛋白的方法所需要的时间也较高,因此在使用上不仅成本较高,且不方便。
发明内容
本发明是关于一种α-突触核蛋白感测薄膜及其制造方法与用途,是使用α-突触核蛋白的多肽片段印迹于高分子聚合物上,以制得α-突触核蛋白感测薄膜,并用于检测样本中的α-突触核蛋白。
本发明揭露的α-突触核蛋白感测薄膜,包含一基板以及一聚合于基板上的多个α-突触核蛋白辨识聚合物,其中每一所述α-突触核蛋白辨识聚合物表面具有多个可辨识α-突触核蛋白的微孔洞。
本发明亦揭露一种制备α-突触核蛋白感测薄膜的方法,是将一α-突触核蛋白多肽与一高分子聚合物单体混合,以电聚合方法设置于一导电基板上,其中所述α-突触核蛋白多肽序列是选自由SEQ ID NO:1、SEQ ID NO:2、SEQ ID NO:3以及SEQ ID NO:4所构成的群组。
本发明也揭露一种检测α-突触核蛋白的方法,是将一待测样本与一α-突触核蛋白感测薄膜反应,以检测所述待测样本中的α-突触核蛋白,其中所述α-突触核蛋白感测薄膜包含一基板以及一聚合于所述基板上的多个α-突触核蛋白辨识聚合物,且其中每一所述α-突触核蛋白辨识聚合物表面具有多个可辨识α-突触核蛋白的微孔洞。
于本发明的一实施例中,基板为导电基板,α-突触核蛋白辨识聚合物为α-突触核蛋白多肽印迹的高分子聚合物。
于本发明的一实施例中,导电基板为氧化铟锡(indium tin oxide,ITO)基板、PET可挠式导电玻璃基板、掺铝氧化锌(AZO)导电基板、掺氟氧化锡(FTO)导电基板与二氧化硅导电基板其中至少一种,且所述高分子聚合物的单体为3,4-亚乙基二氧噻吩(3,4-ethylenefioxythiophene,简称EDOT)以及羟甲基3,4-二氧乙基噻吩(hydroxymethyl 3,4-ethylenedioxy-thiophene,简称EDOT-OH)其中至少一种。
于本发明的一实施例中,α-突触核蛋白多肽序列是选自由SEQ ID NO:1、SEQ IDNO:2、SEQ ID NO:3以及SEQ ID NO:4所构成的群组。
于本发明的一实施例中,α-突触核蛋白感测薄膜的电流密度介于0.01~500mA。
于本发明的一实施例中,待测样本为一血液样本、一尿液样本、一唾液样本、一汗液样本、一泪液样本、一脑脊液样本或是自组织或器官中获得的样本其中至少一种。
由此,本发明制得的α-突触核蛋白感测薄膜,是将α-突触核蛋白多肽与高分子材料混合后,经过电聚合反应,以在一基板上形成可辨识α-突触核蛋白的聚合物,其能专一性辨识并结合α-突触核蛋白,且使用上相当方便。
附图说明
图1为本发明α-突触核蛋白感测薄膜的制造方法示意图。
图2为本发明α-突触核蛋白感测薄膜的安培法检测分析图。
图3为本发明α-突触核蛋白感测薄膜的接触角分析图。
图4为本发明α-突触核蛋白感测薄膜的扫描式电子显微镜照片。
图5为本发明α-突触核蛋白感测薄膜的扫描式原子力显微镜照片以多肽1、多肽2或多肽3印迹的α-突触核蛋白感测薄膜的电流密度差值分析图。
图6为本发明以多肽1、多肽2或多肽3印迹的α-突触核蛋白感测薄膜的电流密度差值分析图。
图7为本发明的多肽3印迹的α-突触核蛋白感测薄膜的电流密度差值分析图。
图8为本发明α-突触核蛋白感测薄膜的电流密度差值分析图。
图9为本发明α-突触核蛋白感测薄膜的电流密度对应扫描速率的平方根分析图。
图10为本发明以多肽4与硫化钨印迹的α-突触核蛋白感测薄膜的电流密度分析图。
图11为本发明α-突触核蛋白感测薄膜的循环伏安分析图。
图12为本发明α-突触核蛋白感测薄膜的氧化峰值(oxidation peak current)电流密度分析图。
图13为本发明α-突触核蛋白感测薄膜的交流阻抗(AC impedance)分析图。
图14为本发明α-突触核蛋白感测薄膜与SNCA蛋白质作用的电流密度分析图。
图15为本发明α-突触核蛋白感测薄膜的重复使用次数分析图。
图16为本发明α-突触核蛋白感测薄膜吸附SNCA能力分析图(一)。
图17为本发明α-突触核蛋白感测薄膜吸附SNCA能力分析图(二)。
图18为本发明α-突触核蛋白感测薄膜吸附SNCA能力分析图(三)。
具体实施方式
为了对本发明的技术特征、目的和有益效果有更加清楚的理解,现对本发明的技术方案进行以下详细说明,但不能理解为对本发明的可实施范围的限定。
本发明揭露一种α-突触核蛋白感测薄膜、其制造方法与用途,α-突触核蛋白感测薄膜包含一基板以及聚合于基板上的多个α-突触核蛋白辨识聚合物,其中每一α-突触核蛋白辨识聚合物表面具有多个可辨识α-突触核蛋白的微孔洞;基板为导电基板,可为但不限于氧化铟锡基板、PET可挠式导电玻璃基板、掺铝氧化锌(AZO)导电基板、掺氟氧化锡(FTO)导电基板与二氧化硅导电基板,且α-突触核蛋白辨识聚合物是为一α-突触核蛋白多肽印迹的高分子聚合物,其中的高分子聚合物的单体可为3,4-亚乙基二氧噻吩以及羟甲基3,4-二氧乙基噻吩其中至少一种,且高分子聚合物是经过电聚合反应后所获得;此外,用于印迹的α-突触核蛋白多肽序列是选自由SEQ ID NO:1、SEQ ID NO:2、SEQ ID NO:3以及SEQ ID NO:4所构成的群组,而制得的α-突触核蛋白感测薄膜可用于检测待测样品中的α-突触核蛋白。
请参见图1,本发明中制备α-突触核蛋白感测薄膜的方法,是将一目标多肽与一高分子聚合物单体混合,以电聚合方法设置于一导电基板上,其中所述目标多肽为α-突触核蛋白多肽,且序列是选自由SEQ ID NO:1、SEQ ID NO:2、SEQ ID NO:3以及SEQ ID NO:4所构成的群组;电聚合反应后,再将目标多肽移除,便可获得α-突触核蛋白感测薄膜。
一、α-突触核蛋白感测薄膜的制备
准备一可导电的氧化铟锡(ITO)基板,并依序以去离子水、异丙醇以及酒精清洁后烘干。
首先,于ITO基板上以循环伏安法沉积一聚羟甲基3,4-二氧乙基噻吩(poly(EDOT-OH))薄层,以获得一预沉积基板,制作方法简述如下:将ITO基板为工作电极、以银/氯化银(Ag/AgCl)作为参考电极、以及以含有10mM的EDOT-OH、100mM的过氯酸锂(LiClO4)、以及50mM的十二烷基硫酸钠(Sodium dodecyl sulfate,SDS)的水溶液作为电解溶液,以-0.6V~1.1V的循环电位、扫描速率100mV/sec的条件,进行小于3次循环的扫描,以在ITO基板上沉积一poly(EDOT-OH)薄层,poly(EDOT-OH)可以提高后续电聚合反应中、聚合物与ITO基板的附着力。
接着,将3,4-亚乙基二氧噻吩(EDOT)、羟甲基3,4-二氧乙基噻吩(EDOT-OH)以及含有等摩尔数的EDOT与EDOT-OH的混合物分别溶解于含有100mM的高氯酸四丁基铵(tetrabutylammonium perchlorate,TBAP)的二氯甲烷(CH2Cl2)溶剂中,以配置10mM(浓度)的EDOT溶液、10mM(浓度)EDOT-OH溶液以及包含10mM的EDOT/EDOT-OH混合溶液;接着,先将电极浸泡于0℃的溶液中3分钟,再实施电聚合反应,本实施例的电聚合反应是于固定电压1.1V vs Ag/Ag+的条件,作用10秒,以于上述的预沉积基板的表面沉积具有微纳米结构的PEDOT(poly-EDOT)、poly(EDOT-OH)以及EDOT/EDOT-OH的共聚物。
于进行多肽印迹时,先将α-突触核蛋白的多肽,溶解于去离子水中,以获得一α-突触核蛋白多肽溶液,本次实验中分别使用四段α-突触核蛋白的多肽进行印迹,以下称为多肽1、多肽2、多肽3与多肽4,多肽1的序列为SEQ ID NO:1,多肽2的序列为SEQ ID NO:1,多肽3的序列为SEQ ID NO:3,以及多肽4的序列为SEQ ID NO:4。
接着将上述配置的EDOT溶液、EDOT-OH溶液以及EDOT/EDOT-OH混合溶液,分别与四种α-突触核蛋白多肽溶液混合,并使α-突触核蛋白多肽混合溶液中的多肽浓度为0.01mg/mL,以获得一α-突触核蛋白多肽混合溶液;接着进行电聚合反应,步骤简述如下:以上述准备的可导电的ITO基板为工作电极(working electrode),以白金电极作为辅助电极(counter electrode),以及使用银/氯化银(Ag/AgCl)电极作为参考电极,并以上述的α-突触核蛋白多肽混合溶液作为导电液,固定电压1.1V vs Ag/Ag+的条件,进行电聚合反应,接着取出氧化铟锡基板,依序以去离子水、5(v/v)%酒精水溶液交替清洗两次,以洗去未聚合化合物单体以及多肽,便可获得α-突触核蛋白感测薄膜(后续简称MIPs);在α-突触核蛋白感测薄膜上形成有多个α-突触核蛋白辨识聚合物,且每一α-突触核蛋白辨识聚合物上具有多个可辨识α-突触核蛋白的微孔洞。此外,同时制备仅使用EDOT溶液、EDOT-OH溶液以及EDOT/EDOT-OH混合溶液、而没有加入多肽溶液进行电聚合反应的组别,以获得一无印迹感测薄膜,以作为对照组,后续将其简称为NIPs。
此外,为了区分不同材料与α-突触核蛋白多肽制备的α-突触核蛋白感测薄膜,后续的MIPs将以“MIPs_高分子材料_多肽种类”方式呈现,例如“MIPs_EDOT_多肽1”代表用于电聚合的高分子材料为EDOT,且是使用多肽1作为印迹模板,以此类推。
接着,将面积1平方公分的α-突触核蛋白感测薄膜作为工作电极,以白金电极、钨钼合金电极或是陶瓷铜合金作为辅助电极(counter electrode),以及使用银/氯化银电极、铜钨合金、银钨合金、钨钼合金或铬铜合金等等作为参考电极,再将三种电极浸泡于铁氯化钾/亚铁氰化钾电解液中,再以恒电位仪进行电化学测量分析;以下实施例中,辅助电极为白金电极、参考电极为银/氯化银电极。
首先,请参见图2中的(A),为不同单体溶液以及以多肽1搭配不同单体溶液,于给予1.1V的电压强度进行电聚合反应时,电聚合过程中不同时间的电流密度分析图,于多肽1印迹的组别中,MIPs_EDOT-OH具有最高的电流密度,约为350~400μm/cm2,MIPs_EDOT的电流密度最低,约为200~250μm/cm2;再请参见图2中的(B),为各感测薄膜于通电后20秒时的电流密度,于无多肽印迹的组别中,NIPs_PEDOT的电流密度约为50μm/cm2,低于MIPs_PEDOT的电流密度,于另外二组别中,经多肽印迹所制得的感测薄膜(MIPs),其电流密度都高于无印迹感测薄膜(NIPs)。
请再参见图3中的(A),为NIPs_EDOT-OH以及MIPs_EDOT-OH的水接触角分析图,根据图3中的(A),在感测薄膜合成后、未移除模板的状态下,NIPs_EDOT-OH的接触角约为35.0±1.1°,低于MIPs_EDOT-OH感测薄膜的接触角(54.2±0.6°),表示MIPs_EDOT-OH感测薄膜的表面疏水性较强;在将模板移除后,NIPs_EDOT-OH与MIPs_EDOT-OH的接触角都增加,表示二者的表面疏水性也都提高了;又,将NIPs_EDOT-OH与MIPs_EDOT-OH与印迹模板作用后,二者的接触角度相近,都约为102.9±3.7°。再请参见图3中的(B),为以5(v/v)%乙醇清洗后的MIPs_EDOT-OH感测薄膜的化学分析电子光谱的分析结果,结果显示5(v/v)%乙醇确实能清洗掉所有的印迹模板。
请参见图4,为NIPs_EDOT-OH与MIPs_EDOT-OH的扫描式电子显微镜观察照片,照片中较亮的区域具有高度的光散射性,通常代表粗糙度较高的区域;图4中的(a)是MIPs_EDOT-OH于模板未移除时的扫描式电子显微镜照片,图4中的(b)是NIPs_EDOT-OH于模板未移除时的扫描式电子显微镜照片,都呈现出类似的管状构造,表示电聚合过程中,模板多肽的存在并不会影响EDOT-OH聚合物纳米结构的形成。
图4中的(c)是MIPs_EDOT-OH于移除模板后的扫描式电子显微镜照片,图4中的(d)是NIPs_EDOT-OH于移除模板后的扫描式电子显微镜照片,二者也具有类似的管状构造;图4中的(e)是MIPs_EDOT-OH重新与模板作用后的扫描式电子显微镜照片,图4中的(f)则是NIPs_EDOT-OH重新与模板作用后的扫描式电子显微镜照片,二者也具有类似的管状构造。
又,图5为NIPs_EDOT-OH与MIPs_EDOT-OH的原子力显微镜(Atomic ForceMicroscope)观察照片,图5中的(a)是未移除模板的MIPs_EDOT-OH,图5中的(b)是未移除模板的NIPs_EDOT-OH,图5中的(c)是移除模板后的MIPs_EDOT,图5中的(d)是移除模板后的NIPs_EDOT,图5中的(e)是重新与模板结合后的MIPs_EDOT,图5中的(f)则是重新与模板结合后的NIPs_EDOT,于所有的这片中都可以观察到管状构造,表示模板多肽的存在并不会影响电聚合过程EDOT-OH聚合物纳米结构的形成。
将制得的α-突触核蛋白感测薄膜以循环伏安法分析,扫描电压为-0.85~0.8伏特(V),扫描速率为0.1V/秒,并将所得到的结果计算印迹效率;印迹效率的计算公式为:
印迹效率(α)=MIPs电流量/NIPs电流量
请参见图6中的(A),为使用多肽1印迹所得到的MIPs,MIPs_EDOT_多肽1的电流密度差值(current density differences,Δcurrent density)为0.586mA/cm2,而NIPs_EDOT的电流密度差值则为0.361mA/cm2;又,MIPs_EDOT/EDOT-OH_多肽1的电流密度差值也为0.572mA/cm2,而NIPs_EDOT/EDOT-OH的电流密度差值则为0.552mA/cm2;此外,MIPs_EDOT_OH-多肽1的电流密度差值为0.439mA/cm2,而NIPs_EDOT的电流密度差值则为0.173mA/cm2;而各组的印迹效率分别为:EDOT_多肽1的α值为1.623,EDOT/EDOT-OH_多肽1的α值为1.036,以及EDOT-OH_多肽1的α值为2.537,表示在使用多肽1为印迹模板的各组别中,以EDOT-OH作为高分子原料所获得的α-突触核蛋白感测薄膜具有较佳的印迹效率。
请参阅图6中的(B),为使用多肽2印迹所得到的MIPs,MIPs_EDOT_多肽2的电流密度差值为0.369mA/cm2,而NIPs_EDOT的电流密度差值则为0.203mA/cm2;又,MIPs_EDOT/EDOT-OH_多肽2的电流密度差值也为0.740mA/cm2,而NIPs_EDOT/EDOT-OH的电流密度差值则为0.475mA/cm2;此外,MIPs_EDOT-OH_多肽2的电流密度差值为0.530mA/cm2,而NIPs_EDOT的电流密度差值则为0.444mA/cm2;而各组的印迹效率分别为:EDOT_多肽2的α值为1.82,EDOT/EDOT-OH_多肽2的α值为1.56,以及EDOT-OH_多肽2的α值为1.19,表示在使用多肽2为印迹模板的各组别中,以EDOT作为高分子原料所获得的α-突触核蛋白感测薄膜具有较佳的印迹效率。
请再参阅图7,为使用多肽3印迹所得到的MIPs,MIPs_EDOT_多肽3的电流密度差值为0.6205mA/cm2,而NIPs_EDOT的电流密度差值则为0.565mA/cm2;又,MIPs_EDOT/EDOT-OH_多肽3的电流密度差值为0.688mA/cm2,而NIPs_EDOT/EDOT-OH的电流密度差值则为0.602mA/cm2;此外,MIPs_EDOT-OH_多肽3的电流密度差值为0.333mA/cm2,而NIPs_EDOT的电流密度差值则为0.144mA/cm2;各组的印迹效率分别为:EDOT_多肽3的α值为1.10,EDOT/EDOT-OH_多肽3的α值为1.14,以及EDOT-OH_多肽3的α值为2.31,表示在使用多肽3为印迹模板的各组别中,以EDOT-OH作为高分子原料所获得的α-突触核蛋白感测薄膜具有较佳的印迹效率。
再请参见图8,再将EDOT-OH_多肽1、EDOT_多肽2与EDOT-OH_多肽3组别的α-突触核蛋白感测薄膜进行检测,MIPs_EDOT-OH_多肽1的电流密度差值为0.439mA/cm2,而NIPs_EDOT-OH的电流密度差值则为0.173mA/cm2,印迹效率α值为2.54;MIPs_EDOT_多肽2的电流密度差值为0.369mA/cm2,而NIPs_EDOT的电流密度差值则为0.203mA/cm2,印迹效率α值为1.82;MIPs_EDOT-OH_多肽3的电流密度差值为0.333mA/cm2,而NIPs_EDOT-OH的电流密度差值则为0.144mA/cm2,印迹效率α值为2.31;此结果表示以EDOT-OH作为高分子原料、以多肽1作为印迹模板所获得的α-突触核蛋白感测薄膜具有较佳的印迹效率。
请再参见图9,为MIPs_EDOT-OH_多肽1(图中标示为MIPs)与NIPs_EDOT-OH(图中标示为NIPs)的电流密度对应扫描速率的平方根的分析图,是用于分析二者电流峰值(peakcurrent)的线性关系,又根据Randles-Sevcik方程式,可计算出MIPs_EDOT-OH_多肽1的表面积为1.746cm2,以及NIPs_EDOT-OH的表面积为1.726cm2。
又,图10为使用50μg的多肽4与50μg硫化钨(WS2)进行印迹所获得α-突触核蛋白感测薄膜(MIPs_多肽4+WS2),以及使用无印迹感测薄膜(NIPs),感测浓度介于0.001~1000pg/mL的α-突触核蛋白,再进行电流密度差值分析的结果,根据图10,MIPs_多肽4+WS2的印迹效率α值为2.3。
请参见图11中的(A),为使用浓度为0.000065nM~65nM的多肽1溶液,与MIPs_EDOT-OH_多肽1作用后,再以循环伏安法分析,以获得的循环伏安分析图,图11中的(B)则为NIPs_EDOT-OH与0.000065nM~65nM的多肽1溶液作用后的循环伏安分析图,其中MIPs_EDOT-OH_多肽1的氧化峰值为410-420mV,且还原电压介于90-100mV;根据图11中的(A),未与多肽1作用的MIPs_EDOT-OH_多肽1,其氧化峰值电流密度为7.4mA/cm2,但与多肽1作用后,其氧化峰值电流密度会逐渐上升;又根据图11中的(B),未与多肽1作用的NIPs_EDOT-OH,其氧化峰值电流密度为6.9mA/cm2,但与0.65nM(1.0ng·mL-1)多肽1作用后,其氧化峰值电流密度会上升,为7.1mA/cm2。
再请参见图12中的(A),为使用不同聚合物单体、以多肽1印迹获得的α-突触核蛋白感测薄膜,与不同浓度的多肽1作用后,以循环伏安分析法所获得的氧化峰值(oxidationpeak current)电流密度的变化曲线图,其中有多肽印迹所获得的α-突触核蛋白感测薄膜,与无多肽印迹的组别相比,都具有较高的氧化峰值电流密度,且各组别的α-突触核蛋白感测薄膜,与越高浓度的多肽1作用后,其电流密度氧化峰值也都会随之上升,表示所制备的α-突触核蛋白感测薄膜都具备有感测α-突触核蛋白的能力;又,MIPs_EDOT-OH-多肽1与NIPs_EDOT-OH,二者的电流密度氧化峰值差异最大。再请参见图12中的(B),为以多肽1印迹的各种α-突触核蛋白感测薄膜(MIPs),以及无印迹感测薄膜(NIPs),与0.65nM的多肽1溶液作用后,所获得的电流密度分析图,其中以MIPs_EDOT-OH的电流密度为高,次高者为MIPs_EDOT/EDOT-OH,而以MIPs_EDOT的电流密度最低;但是在无多肽印迹的组别中,NIPs_EDOT-OH的电流密度最低、NIPs_EDOT/EDOT-OH与NIPs_EDOT的电流密度则近似。
请参见图13,为MIPs_EDOT-OH-多肽1与NIPs_EDOT-OH的奈奎斯特图(Nyquistplot),是用于表示其交流阻抗(AC impedance)特性,于印迹后洗去多肽模板(图中标示为“After washing”),以及再与多肽1结合后(图中标示为“Rebound”)的电阻抗讯号测量结果;其中,NIPs_EDOT-OH的电阻抗讯号,于洗去多肽模板以及与多肽1结合后,都无明显变化,但是MIPs_EDOT-OH-多肽1于结合多肽1后,其交流电阻抗讯号会下降。
请参见图14,为NIPs_EDOT-OH与MIPs_EDOT-OH_多肽1,分别与0.65nM的多肽1、于第53个氨基酸丙氨酸由(alanine)突变成苏氨酸(threonine)的α-突触核蛋白(SNCA_A53T)、以及于第64号氨基酸由谷氨酸(glutamic acid)突变成赖氨酸(Lysine)以及第53个氨基酸丙氨酸由(alanine)突变成苏氨酸(threonine)的双突变的α-突触核蛋白(SNCA_E64K/A53T)作用后,所检测到的电流密度差值,与突变SCNA作用的MIPs_EDOT-OH_多肽1,其电流密度差值有明显下降的情形。
请参见图15,为本发明MIPs_EDOT-OH_多肽1的重复使用次数分析图,将MIPs_EDOT-OH_多肽1与0.65nM(1ng/mL)的多肽1溶液作用后,测量其电流密度,以获得第一次的测量结果;接着以清水清洗MIPs_EDOT-OH_多肽、阴干,再与1ng/mL的多肽1溶液作用,再测量电流密度,以获得第二次的测量结果;重复上述步骤,总共进行六次的测量,并将第一次测量结果视为100%,计算第2~6次测量结果的相对电流(relative current);根据图15,六次测量结果的差距都不大,只有第六次测量结果的相对电流有些微下降的情形,表示本发明的α-突触核蛋白感测薄膜确实可以重复使用,且重复使用后的测量结果也具有可信度。
请再参见图16,为本发明MIPs_EDOT-OH_多肽1,以及NIPs_EDOT-OH,与不同浓度的α-突触核蛋白(SNCA)溶液,分别作用5分钟、10分钟与20分钟后,其电流密度差值的测量结果;图16显示,作用20分钟后,MIPs_EDOT-OH_多肽1具有最高的电流密度差值,且与NIPs_EDOT-OH具有明显差异,其次为作用10分钟的组别,也与NIPs_EDOT-OH具有明显差异;而作用5分钟的组别,MIPs_EDOT-OH_多肽1,以及NIPs_EDOT-OH的电流密度差值并无明显差异。
接着请参见图17,是先将MIPs_EDOT-OH_多肽1,以及NIPs_EDOT-OH分别与不同浓度的α-突触核蛋白(SNCA)作用,之后再以ELISA的方式检测MIPs_EDOT-OH_多肽1,以及NIPs_EDOT-OH可结合的SNCA量;图17的结果显示,MIPs_EDOT-OH_多肽1的SNCA最大结合量约为3.65μg/cm2。
接着,使用以SNCA未突变(图中标示为“wt”)以及SNCA基因具有三重复突变(图中标示为“3X”)的两株诱导性多能干细胞株(induced pluripotent stem cells),先将其诱导成腹侧神经上皮干细胞(ventralized neural epithelial stem cell,简称为vNESCs),再使vNESCs发育成中脑类器官(midbrain organioid);将中脑类器官培养持续于培养基中,每三日换一次培养基,并于培养后第29日以及第38日收集培养基,进行后续试验。图18中的(A)为以MIPs_EDOT-OH_多肽1测量培养基中α-突触核蛋白(SNCA)浓度的试验结果,培养后第29日,wt组培养基中的SNCA浓度为186.7(±11.1%)fM,而3X组培养基中的SNCA浓度为228.2(±12.1%)fM;培养后第38日,wt组培养基中的SNCA浓度为172.9(±8.0%)fM,而3X组培养基中的SNCA浓度为325.0(±8.5)fM,显然3X组的中脑类器官确实表现较高量的SNCA。图18中的(B)是将所培养的中脑类器官,以免疫荧光染色法检测其中的SNCA表现情形,表现有SNCA的区域会呈现红色;根据图18中的(B),wt组的中脑类器官内并无明显表现SNCA,但是3X组的中脑类器官内并确实可检测到大量的SNCA。
此外,本发明制得的α-突触核蛋白感测薄膜,可用于检测多种样本中的α-突触核蛋白含量,这些样本可为但不限于血液样本、尿液样本、唾液样本、脑脊液样本、或是自组织或器官中萃取得到的样本内的α-突触核蛋白含量,使用方便且准确性高。
序列表
<110> 陈月端
<120> α-突触核蛋白感测薄膜及其制造方法与用途
<130> GAI21TW3554
<150> 109118820
<151> 2020-06-04
<160> 4
<170> PatentIn version 3.5
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<213> 人工序列
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Claims (6)
1. 一种能够重复使用的α-突触核蛋白感测薄膜,其包含一基板以及一聚合于所述基板上的多个α-突触核蛋白辨识聚合物,其中每一所述α-突触核蛋白辨识聚合物表面具有多个可辨识α-突触核蛋白的微孔洞,其中所述α-突触核蛋白辨识聚合物为α-突触核蛋白多肽印迹的高分子聚合物,且其中所述α-突触核蛋白多肽的序列是选自由SEQ ID NO:1、SEQ IDNO:2、SEQ ID NO:3以及SEQ ID NO:4所构成的群组,并且所述高分子聚合物的单体为3,4-亚乙基二氧噻吩以及羟甲基3,4-二氧乙基噻吩单体其中至少一种。
2.根据权利要求1所述的α-突触核蛋白感测薄膜,其中所述基板为导电基板,所述导电基板为一氧化铟锡基板,且所述高分子聚合物的单体由3,4-亚乙基二氧噻吩以及羟甲基3,4-二氧乙基噻吩单体组成。
3. 一种制备能够重复使用的α-突触核蛋白感测薄膜的方法,其是将一α-突触核蛋白多肽与一高分子聚合物单体混合,并以电聚合方法聚合于一导电基板上,其中所述α-突触核蛋白多肽序列是选自由SEQ ID NO:1、SEQ ID NO:2、SEQ ID NO:3以及SEQ ID NO:4所构成的群组,并且所述高分子聚合物的单体为3,4-亚乙基二氧噻吩以及羟甲基3,4-二氧乙基噻吩单体其中至少一种。
4.根据权利要求3所述的制备α-突触核蛋白感测薄膜的方法,其中所述导电基板为一氧化铟锡基板。
5.一种使用权利要求1所述的能够重复使用的α-突触核蛋白感测薄膜检测α-突触核蛋白的方法,其是将一待测样本与一α-突触核蛋白感测薄膜反应,以检测所述待测样本中的α-突触核蛋白,其中所述α-突触核蛋白感测薄膜包含一基板以及一聚合于所述基板上的多个α-突触核蛋白辨识聚合物,且其中每一所述α-突触核蛋白辨识聚合物表面具有多个可辨识α-突触核蛋白的微孔洞。
6.根据权利要求5所述的检测α-突触核蛋白的方法,其中所述待测样本为一血液样本、一尿液样本、一唾液样本、一汗液样本、一泪液样本、一脑脊液样本其中至少一种。
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