CN113745444A - Anode layer surface planarization method, OLED device and display device - Google Patents
Anode layer surface planarization method, OLED device and display device Download PDFInfo
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- 239000007788 liquid Substances 0.000 claims description 11
- 238000001039 wet etching Methods 0.000 claims description 5
- 238000002360 preparation method Methods 0.000 abstract description 16
- 239000012528 membrane Substances 0.000 abstract description 5
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- 239000011368 organic material Substances 0.000 description 2
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Abstract
The application provides an anode layer surface planarization method, an OLED device and a display device, wherein the anode layer surface planarization method comprises the following steps: preparing an anode layer on a substrate; determining an area of the anode layer to be planarized; and thinning the anode layer of the area to be flattened. After the anode layer is prepared, the area to be flattened is determined, and the anode layer in the area is subjected to thickness reduction treatment, so that organic matters remained on the surface of the anode layer corresponding to the opening in the preparation process of the anode layer can be removed along with the reduction, one surface of the thinned anode layer is free from being protruded in the subsequent preparation process, and the phenomenon that the protrusions penetrate through the structure of the layer to cause membrane breakage and cause abnormal circuit connection when a thinner layer structure is prepared is avoided.
Description
Technical Field
The application relates to the technical field of display, in particular to an anode layer surface planarization method, an OLED device and a display device.
Background
In the prior art of display technology, it is a common technical means to make a thinner layer structure directly on an anode layer to achieve circuit connection, however, in making some thinner layer structures, the surface of the anode layer is required to be very flat and smooth, otherwise, the thickness of the layer structure made on the anode is limited.
However, organic matter covers the surface of the anode layer in the preparation process of the anode layer, and the organic matter remains on the surface of the anode layer after the anode layer is prepared, so that the surface of the anode layer is provided with bulges, and a thin-layer structure is prepared on the anode layer, so that membrane breakage is easily caused, and circuit connection is abnormal.
Disclosure of Invention
The application provides an anode layer surface planarization treatment method, an OLED device and a display device, which can solve the problem that the surface of an anode layer is convex and avoid circuit abnormity caused by membrane breaking when a thin layer structure is prepared on the anode layer.
In one aspect, the present application provides a method for planarizing a surface of an anode layer, including:
preparing an anode layer on a substrate;
determining an area of the anode layer to be planarized;
and thinning the anode layer of the area to be flattened.
In one possible implementation manner of the present application, the determining a region to be planarized of the anode layer includes:
and preparing a pixel defining layer on the anode layer, wherein an opening is formed in the pixel defining layer, and the region of the anode layer exposed out of the opening is the region to be flattened.
In one possible implementation manner of the present application, the preparing an anode layer on a substrate includes:
preparing an anode bottom layer on the substrate;
preparing a metal layer on the anode bottom layer;
and preparing an anode top layer with the thickness larger than that of the anode bottom layer on the metal layer.
In a possible implementation manner of the present application, a thickness range of the anode layer in the region to be planarized after being etched and thinned is greater than or equal to 5 nanometers.
In a possible implementation manner of the present application, the thickness reduction of the anode layer of the region to be planarized includes:
determining an etching system and thinning thickness data, and acquiring etching time according to the thinning thickness data and the etching system;
and etching and thinning the side, far away from the substrate, of the anode layer based on the etching time.
In a possible implementation manner of the present application, determining an etching system and thinning thickness data, and obtaining an etching time according to the thinning thickness data and the etching system includes:
determining an etching system as wet etching, and acquiring the etching rate and the etching liquid temperature of etching liquid;
and determining the etching time based on the thinning thickness data, the etching liquid temperature and the etching rate.
In a possible implementation manner of the present application, the step of reducing the thickness of the anode layer of the region to be planarized further includes:
and preparing a light-emitting layer on the anode layer with the reduced thickness, wherein the light-emitting layer is arranged in the opening.
In another aspect, the invention further provides an OLED device, which includes a substrate and an anode layer formed on the substrate, wherein a groove for forming a light emitting layer is formed on a surface of the anode layer away from the substrate.
In a possible implementation manner of the present application, a pixel defining layer is disposed on the anode layer, and an opening is disposed at a position of the pixel defining layer corresponding to the groove.
In one possible implementation of the present application, the anode layer includes:
the anode bottom layer is arranged on the substrate;
the metal layer is arranged on the anode bottom layer;
the anode top layer is arranged on the metal layer, and the groove is formed in one surface, back to the metal layer, of the anode top layer.
In another aspect, the present invention also provides an OLED display device including the OLED device as described in any one of the above.
Through accomplishing the anode layer preparation back in this application, confirm to treat the planarization region and carry out the thickness attenuate processing to the anode layer in this region for correspond in the anode layer preparation process the opening part is remained the organic matter on anode layer surface can be got rid of along with the attenuate, makes the one side of anode layer department after the attenuate in the follow-up preparation process not have the arch, has avoided these a little protruding penetrating layer structures to cause the rupture of membranes when preparing thin layer structure, leads to the circuit connection unusual.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic flow chart illustrating an embodiment of a method for planarizing a surface of an anode layer according to an embodiment of the present disclosure;
fig. 2 is a schematic process flow diagram after step S200 in the method for planarizing the surface of the anode layer according to the embodiment of the present application;
fig. 3 is a schematic process flow diagram after step S300 in the method for planarizing the surface of the anode layer according to the embodiment of the present application;
FIG. 4 is a schematic flow chart illustrating an exemplary method for planarizing a surface of an anode layer according to an embodiment of the present disclosure;
fig. 5 is a schematic process flow diagram after step S400 in the method for planarizing the surface of the anode layer according to the embodiment of the present application;
FIG. 6 is a schematic structural diagram of an OLED device provided in an embodiment of the present application;
fig. 7 is an enlarged structural view of a in fig. 6.
In the figure: 1. substrate, 2, anode layer, 20, anode bottom layer, 21, metal layer, 22, anode top layer, 220, groove, 3, pixel definition layer, 30, opening, 4, light emitting layer, 5, cathode layer.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be considered as limiting the present invention. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first", "second", may explicitly or implicitly include one or more of the described features. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In this application, the word "exemplary" is used to mean "serving as an example, instance, or illustration. Any embodiment described herein as "exemplary" is not necessarily to be construed as preferred or advantageous over other embodiments. The following description is presented to enable any person skilled in the art to make and use the invention. In the following description, details are set forth for the purpose of explanation. It will be apparent to one of ordinary skill in the art that the present invention may be practiced without these specific details. In other instances, well-known structures and processes are not shown in detail to avoid obscuring the description of the invention with unnecessary detail. Thus, the present invention is not intended to be limited to the embodiments shown, but is to be accorded the widest scope consistent with the principles and features disclosed herein.
The embodiment of the application provides an anode layer surface planarization method, an OLED device and a display device, where the anode layer surface planarization method can be used for a substrate or a circuit structure where a thin layer structure needs to be prepared on an anode layer, for example, in an electroluminescence technology through an organic OLED between a cathode and an anode, the organic layer is usually prepared on the anode layer by evaporation or printing. With the development of OLED displays, thin OLED devices are also the mainstream research direction in the industry, and it is required to prepare thinner and thinner light emitting layer structures on the anode layer. The anode layer surface planarization treatment method can be applied to the preparation of OLED devices, and is described in detail below.
Referring to fig. 1, a schematic flowchart of an embodiment of a method for planarizing a surface of an anode layer in an embodiment of the present application is shown, where the method for planarizing a surface of an anode layer includes steps S100 to S300:
referring to fig. 2 and 7 in combination, S100, an anode layer 2 is prepared on a substrate 1.
The substrate 1 may include a substrate layer, and the substrate may be made of a transparent material, specifically, the substrate 1 may be made of any form, such as glass, a ceramic substrate 1, a transparent plastic, a polyimide flexible substrate, and the like, and the present application is not limited specifically herein.
The substrate 1 may include a source/drain electrode layer and a gate electrode layer formed on the substrate layer, the source/drain electrode layer and the gate electrode layer may be formed by depositing a layer of metal in a physical deposition coating manner using a single-layer or multi-layer combination or alloy material such as Cu, Mo, Ti, Al, etc., as a source/drain electrode layer, and then performing photoresist coating, exposure, development, etching, and stripping to form corresponding patterns.
The substrate 1 can comprise an insulating layer and a planarization layer, the insulating layer and the planarization layer are sequentially prepared on the source drain electrode layer, the anode layer 2 is prepared on one surface, back to the source drain electrode layer, of the planarization layer, and the electrical connection between the poplar base layer and the source drain electrode layer is realized through the planarization layer and the holes in the insulating layer.
The anode layer 2 may be a single-layer anode or a multi-layer anode, and the anode layer 2 is formed on the substrate 1 by a photolithography process. The structure of the substrate 1 may be adjusted according to actual design requirements, and the invention is not particularly limited.
Referring to fig. 2 in combination, in an embodiment of the present invention, the anode layer 2 is a three-layer anode, and includes an anode top layer 22 and an anode bottom layer 20, the step S100 is to prepare the anode layer 2 on the substrate 1, and includes: preparing an anode underlayer 20 on the substrate 1; preparing a metal layer 21 on the anode bottom layer 20; and preparing an anode top layer 22 with the thickness larger than that of the anode bottom layer 20 on the metal layer 21. Specifically, in one embodiment of the present invention, the thickness of the anode top layer does not exceed 80 nm, and the specific preparation thickness can be adjusted according to the actual preparation environment and preparation requirements. The bottom anode bottom layer 20 and the anode top layer 22 are ITO layers, and the three-layer anode may be an ITO/Ag/ITO anode, which is not limited in the present invention.
It is specific, through setting up the thickness of positive pole top layer 22 is greater than positive pole bottom 20 guarantees the thinning step of positive pole top layer 22 can clear away totally the organic matter on positive pole top layer 22 surface and small foreign matter through the thinning step, guarantees simultaneously after the thinning the positive pole top layer 22 has certain thickness and can cover completely arch on the metal level 21 avoids metal level 21 in the preparation process towards the one side of positive pole top layer 22 has the arch to pierce through the attenuate department of positive pole top layer 22.
In particular, the thickness of the anode top layer 22 does not exceed 80 nanometers.
Referring to fig. 2, S200, a pixel defining layer 3 is prepared on the anode layer 2, and the pixel defining layer 3 is provided with an opening 30.
The pixel definition layer 3 is respectively a hydrophobic retaining wall material and a conventional non-hydrophobic retaining wall material, the pixel definition layer 3 is directly prepared on the organic layer through a Bank process, and the pixel definition layer 3 can be formed by coating the pixel definition layer 3 material, exposing, developing, etching and stripping.
Referring to fig. 3, S300, the anode layer 2 leaking out of the opening 30 is thinned.
In some embodiments of the present application, the thickness reduction may be implemented by different etching systems, including using dry etching or wet etching to implement the thickness reduction. The design can be specifically carried out according to the etching requirement.
In one embodiment of the invention, the etching system adopts wet etching, then etching liquid is selected based on the wet etching, different etching liquids have different etching rates, then etching time is determined based on the etching liquid and the thickness to be etched, the etching time can be subjected to etching experiment data acquisition before actual etching to obtain proper etching time, and corresponding available time can be directly obtained according to the determined etching system, the etching liquid, the thickness to be etched (thinning thickness data) and the temperature of the etching liquid.
In other embodiments of the present invention, if the etching system adopts dry etching, the etching time is related to experimental parameters such as dry etching power, dry etching gas, etching pressure, and the like, and specifically, a suitable etching time may be obtained through experimental adjustment before etching.
In the application, the anode layer 2 after the etching thinning has a thickness in the range of 5 nm or more. A very thin anode layer 2 can be prepared. Based on the three-layer anode in the above embodiment, a very thin anode top layer 22 can be prepared, since the thickness of the anode top layer 22 of the single-layer prototype or the three-layer anode is calculated in the OLED resonant cavity, a very short resonant cavity is required for preparing the material-saving and high-performance first-node OLED device, and therefore the thickness of the single-layer anode or the anode top layer 22 needs to be very thin, for example, 5-10 nm. However, the existing physical vapor deposition (pvd) preparation process of the anode layer 2 is difficult to prepare the thin anode layer (the current industry is more than 10nm, and the minimum 10nm ensures the film thickness), and the thinning amount can be controlled by controlling thinning process parameters (such as power, time, temperature and the like), so that the thin anode structure is achieved, and the first-node OLED device with material saving and high performance can be prepared.
With continued reference to fig. 4 and fig. 5, the step S300 is to reduce the thickness of the anode layer 2 leaking out of the opening 30, and then further includes:
step S400: a light emitting layer 4 is prepared on the anode layer 2 with a reduced thickness, wherein the light emitting layer 4 is provided in the opening 30.
In the present application, the light-emitting layer 4 is covered on the thinned anode. The light-emitting layer 4 can be prepared by ink-jet printing, vapor deposition and other methods, and the light-emitting organic materials are vapor deposition type organic materials and organic light-emitting ink-jet materials.
Further, in the above embodiment, after the step S400, a cathode layer 5 may be prepared on the light emitting layer 4 by evaporation, and the cathode layer 5 covers the anode layer 2.
Referring to fig. 3 and fig. 6, based on the embodiment of the foregoing anode layer surface planarization method, an OLED device prepared by the foregoing anode layer surface planarization method is further provided in the examples of the present application, and includes: the light-emitting diode comprises a substrate 1 and an anode layer 2 prepared on the substrate 1, wherein a groove 220 for preparing a light-emitting layer 4 is arranged on one surface of the anode layer 2, which is far away from the substrate 1.
In one embodiment of the present invention, the groove 220 is disposed directly below the opening 30, and the sidewall of the groove 220 is aligned with the edge of the opening 30 on the side of the opening 30 facing the groove 220.
In one embodiment of the present invention, a cathode layer 5 is further disposed on the light-emitting layer 4.
Wherein, the groove 220 is obtained through step S300 in the above embodiment, the anode layer 2 is further provided with a pixel defining layer, the position of the pixel defining layer corresponding to the groove 220 is provided with an opening 30, and the pixel defining layer is obtained through step S200 in the above embodiment.
Referring to fig. 7, in one embodiment of the present invention, the anode layer 2 includes: an anode bottom layer 20, wherein the anode bottom layer 20 is arranged on the substrate 1; the metal layer 21, the metal layer 21 is arranged on the anode bottom layer 20; the anode top layer 22, the anode top layer 22 is disposed on the metal layer 21, and the groove 220 is disposed on a surface of the anode top layer 22 opposite to the metal layer 21. The bottom anode bottom layer 20 and the anode top layer 22 are ITO layers, and the three-layer anode may be an ITO/Ag/ITO anode, which is not limited in the present invention.
The thickness of the groove bottom of the groove 220 is greater than or equal to 5 nm, for example, 5 nm, 6 nm, 8 nm, 9 nm, and the like, and the design can be specifically performed according to the actual situation.
On the basis of the above embodiments, the present invention also provides an OLED display device including the OLED device according to any one of the above embodiments.
The present application prepares an anode layer 2 on a substrate 1; preparing a pixel defining layer 3 on the anode layer 2, wherein an opening 30 is arranged on the pixel defining layer 3; the anode layer 2 leaking out of the opening 30 is reduced in thickness to form a groove 220. By performing thickness reduction treatment on the anode layer 2, which is exposed out of the opening 30, corresponding to the anode layer 2 after the preparation of the anode layer 2 and the preparation of the pixel layer are completed, organic matters remained on the surface of the anode layer 2 at the position corresponding to the opening 30 in the preparation process of the anode layer 2 and tiny foreign matters falling from the surface of the anode layer 2 at the position corresponding to the opening 30 in the preparation process of the pixel definition layer 3 can be removed along with the reduction, so that the surface, which is exposed out of the opening 30, of the anode layer 2 does not protrude, and the phenomenon that the organic matters or the tiny foreign matters penetrate through the OLED light emitting layer 4 to cause membrane rupture and cause abnormal display due to cathode/anode short circuit in the process of preparing a thin OLED is avoided.
The OLED device and the display device provided in the embodiments of the present application are described in detail above, and the principles and embodiments of the present invention are explained herein by using specific examples, and the descriptions of the above examples are only used to help understanding the method and the core ideas of the present invention; meanwhile, for those skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.
Claims (11)
1. A method for planarizing a surface of an anode layer, comprising:
preparing an anode layer on a substrate;
determining an area of the anode layer to be planarized;
and thinning the anode layer of the area to be flattened.
2. The anode layer surface planarization method of claim 1, wherein the determining the area to be planarized of the anode layer comprises:
and preparing a pixel defining layer on the anode layer, wherein an opening is formed in the pixel defining layer, and the region of the anode layer exposed out of the opening is the region to be flattened.
3. The method for planarizing the surface of an anode layer according to claim 1, wherein the preparing an anode layer on a substrate comprises:
preparing an anode bottom layer on the substrate;
preparing a metal layer on the anode bottom layer;
and preparing an anode top layer with the thickness larger than that of the anode bottom layer on the metal layer.
4. The method of claim 1, wherein the anode layer in the region to be planarized has a thickness after etching and thinning in a range of greater than or equal to 5 nm.
5. The anode layer surface planarization method of claim 1, wherein the step of reducing the thickness of the anode layer in the region to be planarized comprises:
determining an etching system and thinning thickness data, and acquiring etching time according to the thinning thickness data and the etching system;
and etching and thinning the side, far away from the substrate, of the anode layer based on the etching time.
6. The anode layer surface planarization method of claim 5, wherein said determining an etching system and a thinning thickness data, and obtaining an etching time according to the thinning thickness data and the etching system, comprises:
determining an etching system as wet etching, and acquiring the etching rate and the etching liquid temperature of etching liquid;
and determining the etching time based on the thinning thickness data, the etching liquid temperature and the etching rate.
7. The anode layer surface planarization treatment method of any one of claims 1-6, wherein said step of reducing the thickness of the anode layer in the region to be planarized further comprises:
and preparing a light-emitting layer on the anode layer with the reduced thickness, wherein the light-emitting layer is arranged in the opening.
8. The OLED device comprises a substrate and an anode layer prepared on the substrate, and is characterized in that a groove for preparing a light-emitting layer is formed in one surface, far away from the substrate, of the anode layer.
9. The OLED device structure of claim 8, wherein a pixel defining layer is disposed on the anode layer, the pixel defining layer having an opening corresponding to the location of the groove.
10. The OLED device structure of claim 9, wherein the anode layer comprises:
the anode bottom layer is arranged on the substrate;
the metal layer is arranged on the anode bottom layer;
the anode top layer is arranged on the metal layer, and the groove is formed in one surface, back to the metal layer, of the anode top layer.
11. An OLED display device comprising an OLED device as claimed in any one of claims 8 to 10.
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| CN114583090A (en) * | 2022-02-22 | 2022-06-03 | 深圳市华星光电半导体显示技术有限公司 | OLED light-emitting device, preparation method thereof and display panel |
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Application publication date: 20211203 |