CN113737273A - 球罩窗口的制备装置及制备方法 - Google Patents
球罩窗口的制备装置及制备方法 Download PDFInfo
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- CN113737273A CN113737273A CN202111113311.5A CN202111113311A CN113737273A CN 113737273 A CN113737273 A CN 113737273A CN 202111113311 A CN202111113311 A CN 202111113311A CN 113737273 A CN113737273 A CN 113737273A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 30
- 238000013519 translation Methods 0.000 claims abstract description 77
- 239000013078 crystal Substances 0.000 claims abstract description 39
- 238000010438 heat treatment Methods 0.000 claims abstract description 20
- 239000002994 raw material Substances 0.000 claims description 32
- 238000012545 processing Methods 0.000 claims description 18
- 239000007788 liquid Substances 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 13
- 238000002844 melting Methods 0.000 claims description 8
- 230000008018 melting Effects 0.000 claims description 8
- 238000010899 nucleation Methods 0.000 claims description 7
- 239000007787 solid Substances 0.000 claims description 6
- 239000012467 final product Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 229910052732 germanium Inorganic materials 0.000 description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 5
- 229910002804 graphite Inorganic materials 0.000 description 5
- 239000010439 graphite Substances 0.000 description 5
- 239000000047 product Substances 0.000 description 5
- 238000005336 cracking Methods 0.000 description 4
- 238000011031 large-scale manufacturing process Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000007770 graphite material Substances 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000012805 post-processing Methods 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/10—Production of homogeneous polycrystalline material with defined structure from liquids by pulling from a melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/08—Germanium
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202111113311.5A CN113737273B (zh) | 2021-09-23 | 2021-09-23 | 球罩窗口的制备装置及制备方法 |
Applications Claiming Priority (1)
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CN202111113311.5A CN113737273B (zh) | 2021-09-23 | 2021-09-23 | 球罩窗口的制备装置及制备方法 |
Publications (2)
Publication Number | Publication Date |
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CN113737273A true CN113737273A (zh) | 2021-12-03 |
CN113737273B CN113737273B (zh) | 2022-06-24 |
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Family Applications (1)
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CN202111113311.5A Active CN113737273B (zh) | 2021-09-23 | 2021-09-23 | 球罩窗口的制备装置及制备方法 |
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CN (1) | CN113737273B (zh) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0653504A1 (fr) * | 1993-11-16 | 1995-05-17 | Commissariat A L'energie Atomique | Procédé de fabrication de pièces en matériau polycristallin ou monocristallin par croissance à partir d'un bain fondu |
US6228167B1 (en) * | 1997-09-22 | 2001-05-08 | Super Silicon Crystal Research Institute Corp. | Single crystal pulling apparatus |
CN102703980A (zh) * | 2012-06-01 | 2012-10-03 | 鸿福晶体科技(安徽)有限公司 | 生长具有一定曲率的半球状蓝宝石晶体的方法 |
WO2016043176A1 (ja) * | 2014-09-19 | 2016-03-24 | 並木精密宝石株式会社 | 複数のサファイア単結晶とその製造方法 |
-
2021
- 2021-09-23 CN CN202111113311.5A patent/CN113737273B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0653504A1 (fr) * | 1993-11-16 | 1995-05-17 | Commissariat A L'energie Atomique | Procédé de fabrication de pièces en matériau polycristallin ou monocristallin par croissance à partir d'un bain fondu |
US6228167B1 (en) * | 1997-09-22 | 2001-05-08 | Super Silicon Crystal Research Institute Corp. | Single crystal pulling apparatus |
CN102703980A (zh) * | 2012-06-01 | 2012-10-03 | 鸿福晶体科技(安徽)有限公司 | 生长具有一定曲率的半球状蓝宝石晶体的方法 |
WO2016043176A1 (ja) * | 2014-09-19 | 2016-03-24 | 並木精密宝石株式会社 | 複数のサファイア単結晶とその製造方法 |
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CN113737273B (zh) | 2022-06-24 |
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Inventor after: Yin Shiping Inventor after: Di Juqing Inventor before: Di Juqing Inventor before: Yin Shiping |
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PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Preparation device and method for ball cover window Granted publication date: 20220624 Pledgee: Huishang Bank Co.,Ltd. Chuzhou Fenghuang road sub branch Pledgor: Anhui Guangzhi Technology Co.,Ltd. Registration number: Y2024980011102 |
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Granted publication date: 20220624 Pledgee: Huishang Bank Co.,Ltd. Chuzhou Fenghuang road sub branch Pledgor: Anhui Guangzhi Technology Co.,Ltd. Registration number: Y2024980011102 |
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