CN113735056A - Manufacturing method based on micro electro mechanical system device - Google Patents

Manufacturing method based on micro electro mechanical system device Download PDF

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Publication number
CN113735056A
CN113735056A CN202110994901.7A CN202110994901A CN113735056A CN 113735056 A CN113735056 A CN 113735056A CN 202110994901 A CN202110994901 A CN 202110994901A CN 113735056 A CN113735056 A CN 113735056A
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China
Prior art keywords
chip
mems
electrode
manufacturing
layer
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CN202110994901.7A
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Chinese (zh)
Inventor
罗宇晖
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Suzhou Yingshi Information Technology Co ltd
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Suzhou Yingshi Information Technology Co ltd
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Priority to CN202110994901.7A priority Critical patent/CN113735056A/en
Publication of CN113735056A publication Critical patent/CN113735056A/en
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C3/00—Assembling of devices or systems from individually processed components
    • B81C3/001—Bonding of two components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/0035—Packages or encapsulation for maintaining a controlled atmosphere inside of the chamber containing the MEMS
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B81C1/00277—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Micromachines (AREA)

Abstract

The invention discloses a manufacturing method based on a micro electro mechanical system device, which comprises the following steps: marks are arranged on the surfaces of the first chip and the second chip, a first electrode is formed at the position of the mark on the first chip, a second electrode is formed at the position of the mark on the second chip, and the first chip and the second chip are bonded together through connection; bonding the first chip and the second chip, and thinning the bonded chip; forming an oxide layer by depositing silicon oxide; removing part of silicon oxide on the oxide layer to expose the conductive through hole, and then depositing a metal layer; connecting the metal layer with the conductive via; adjusting the wiring, depositing a passivation layer, photoetching the passivation layer to expose the part of the second metal layer needing to be butted with the outside, and planting metal balls on the part butted with the outside. The working element of the micro electro mechanical system device can be ensured to be in a vacuum environment, so that the micro electro mechanical system device has higher sensitivity, accuracy and stability.

Description

Manufacturing method based on micro electro mechanical system device
Technical Field
The invention relates to the technical field of electromechanical equipment system research and development, in particular to a manufacturing method based on a micro-electromechanical system device.
Background
The micro-electro-mechanical system technology is a high-tech technology which is developed at a high speed in recent years. Compared with corresponding devices manufactured by the traditional technology, the devices manufactured by the micro electro mechanical system technology have obvious advantages in the aspects of volume, power consumption, weight and price, and batch manufacturing of the micro electro mechanical system devices can be realized by adopting an advanced semiconductor manufacturing process. Mems devices generally sense the pressure, acceleration, angular velocity, etc. applied to the device through capacitance, resistance, etc., and the change in capacitance and resistance is mainly generated by a spring equivalent system inside the device, so that such mems devices have sensitive movable structures, and protection of the movable structures inside the device is usually formed by sealing the device with a cap-like cover.
Microelectromechanical systems, also called microelectromechanical systems, microsystems, micromachines, etc., refer to high-technology devices with dimensions of a few millimeters or even smaller. The internal structure of the micro-electro-mechanical system is generally in the micron or even nanometer scale, and the micro-electro-mechanical system is an independent intelligent system. The micro electro mechanical system is developed on the basis of microelectronic technology, and integrates high-tech electronic mechanical devices manufactured by technologies such as photoetching, corrosion, thin film, LIGA, silicon micromachining, non-silicon micromachining, precision machining and the like. The micro-electromechanical system is a micro device or system integrating micro sensors, micro actuators, micro mechanical structures, micro power sources, micro energy sources, signal processing and control circuits, high-performance electronic integrated devices, interfaces and communication. MEMS is a revolutionary new technology, is widely applied to high and new technology industries, and is a key technology related to national science and technology development, economic prosperity and national defense safety.
MEMS focuses on ultra-precision machining, and relates to the fields of microelectronics, materials, mechanics, chemistry and mechanics. The subject area of the packaging technology covers physical, chemical and mechanical branches of force, electricity, light, magnetism, sound, surface and the like at a micro scale, in the manufacturing and development process of electronic elements, wafer level packaging is a technical trend, and the packaging step of a micro-electromechanical system device is completed before slicing. The MEMS structure manufactured by the traditional process has poor vacuum tightness, and the packaging volume of the MEMS device is larger. In addition, in the traditional packaging mode, the IC integrated circuit chip and the micro-electromechanical system sensor chip are packaged together in a routing mode, and the LGA packaging is made subsequently, so that the occupied space is large.
Bonding technology generally refers to a technology for bonding two homogeneous or heterogeneous semiconductor materials into a whole by van der waals force, molecular force or even atomic force after the materials are directly bonded under certain conditions, so the bonding technology is widely applied to micro-electro-mechanical systems. However, due to the technical bottleneck existing in the design of the existing mems device, the conventional mems device manufacturing method or product structure often has the problems of low sensitivity, poor accuracy, poor stability or short service life of the working element, and the like, and thus needs to be solved urgently.
Disclosure of Invention
The invention overcomes the defects of the prior art and provides a manufacturing method based on a micro-electro-mechanical system device.
In order to achieve the purpose, the invention adopts the technical scheme that: a method of manufacturing a mems-based device, comprising the steps of:
step S1: the first chip surface and the second chip surface are both provided with marks, a first electrode is formed at the position of the mark on the first chip, a second electrode is formed at the position of the mark on the second chip, and the first chip and the second chip are bonded together through connection.
Step S2: bonding the first chip and the second chip, and thinning the bonded chip; oxidizing the surface of the thinned chip, and depositing silicon oxide to form an oxide layer; and removing part of the silicon oxide on the oxide layer to expose the conductive through hole, and then depositing a metal layer.
Step S3: connecting the metal layer with the conductive via; adjusting the wiring, depositing a passivation layer, photoetching the passivation layer to expose the part of the second metal layer needing to be butted with the outside, and planting metal balls on the part butted with the outside.
In a preferred embodiment of the present invention, an additional layer is deposited on the metal layer, wherein the additional layer is a negative photosensitive material.
In a preferred embodiment of the present invention, the mems device layers of the first chip and the second chip are active layers, and each active layer includes an active portion and a fixed portion.
In a preferred embodiment of the present invention, in step S1, the metal wire is disposed and two ends of the metal wire are electrically connected to the first electrode, the second electrode and the working element, respectively.
In a preferred embodiment of the present invention, the additional layer is patterned using the metal layer as a photomask.
In a preferred embodiment of the invention, the patterned metal layer is removed after patterning the additional layer.
In a preferred embodiment of the present invention, in the step S1, the first electrode and the second electrode both penetrate through the bonding interface of the first chip and the second chip.
In a preferred embodiment of the invention, an electrode is formed on the first chip at the location of the mark in ohmic contact with the working element.
In a preferred embodiment of the present invention, a sealed cavity is disposed between the first chip and the second chip, the first chip is a mems sensor chip, the second chip is an IC integrated circuit chip, and the first chip and the second chip are connected by bonding.
The invention solves the defects in the background technology, and has the following beneficial effects:
(1) the technical scheme provided by the invention can ensure that the working element of the micro electro mechanical system device is in a vacuum environment, so that the micro electro mechanical system device has higher sensitivity, accuracy and stability, and the service life of the device is greatly prolonged.
(2) The invention has the functions of the first chip sensor chip and the second chip signal processing chip, but the first chip and the second chip are connected in a bonding mode, and compared with the traditional micro-electromechanical system device connected in a routing mode and the like, the final packaging volume of the micro-electromechanical system device is obviously reduced.
(3) The invention can greatly improve the air tightness of the bonding interface of the two chips with the electrodes penetrating through, so that the cavity of the MEMS device has higher vacuum degree, and further, the sensitivity, the accuracy and the stability of working elements in the cavity of the MEMS device can be ensured, and the service life is longer.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments described in the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a side view of a preferred embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other ways than those specifically described herein, and therefore the scope of the present invention is not limited by the specific embodiments disclosed below.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. indicate orientations or positional relationships based on those shown in the drawings, and are used merely for convenience in describing the present invention and for simplicity in description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore, should not be taken as limiting the scope of the present invention. Furthermore, the terms "first," "second," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first," "second," etc. may explicitly or implicitly include one or more of that feature. In the description of the invention, the meaning of "a plurality" is two or more unless otherwise specified.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art through specific situations.
As shown in fig. 1, a manufacturing method based on a mems device includes the following steps:
step S1: the first chip surface and the second chip surface are both provided with marks, a first electrode is formed at the position of the mark on the first chip, a second electrode is formed at the position of the mark on the second chip, and the first chip and the second chip are bonded together through connection.
Step S2: bonding the first chip and the second chip, and thinning the bonded chip; oxidizing the surface of the thinned chip, and depositing silicon oxide to form an oxide layer; and removing part of the silicon oxide on the oxide layer to expose the conductive through hole, and then depositing a metal layer.
Step S3: connecting the metal layer with the conductive via; adjusting the wiring, depositing a passivation layer, photoetching the passivation layer to expose the part of the second metal layer needing to be butted with the outside, and planting metal balls on the part butted with the outside.
In a preferred embodiment of the present invention, an additional layer is deposited on the metal layer, wherein the additional layer is a negative photosensitive material, the mems device layers of the first chip and the second chip are active layers including an active portion and a fixed portion, and in step S1, a metal wire is disposed and two ends of the metal wire are electrically connected to the first electrode, the second electrode and the working element respectively.
In a preferred embodiment of the present invention, the metal layer is used as a photomask to pattern the additional layer, and the patterned metal layer is removed after the additional layer is patterned, in step S1, the first electrode and the second electrode both penetrate through the bonding interface between the first chip and the second chip, and an electrode in ohmic contact with the working element is formed at the mark position on the first chip.
In a preferred embodiment of the present invention, a sealed cavity is disposed between the first chip and the second chip, the first chip is a mems sensor chip, the second chip is an IC integrated circuit chip, and the first chip and the second chip are connected by bonding.
(1) The technical scheme provided by the invention can ensure that the working element of the micro electro mechanical system device is in a vacuum environment, so that the micro electro mechanical system device has higher sensitivity, accuracy and stability, and the service life of the device is greatly prolonged.
(2) The invention has the functions of the first chip sensor chip and the second chip signal processing chip, but the first chip and the second chip are connected in a bonding mode, and compared with the traditional micro-electromechanical system device connected in a routing mode and the like, the final packaging volume of the micro-electromechanical system device is obviously reduced.
(3) The invention can greatly improve the air tightness of the bonding interface of the two chips with the electrodes penetrating through, so that the cavity of the MEMS device has higher vacuum degree, and further, the sensitivity, the accuracy and the stability of working elements in the cavity of the MEMS device can be ensured, and the service life is longer.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Furthermore, it should be understood that although the present description refers to embodiments, not every embodiment may contain only a single embodiment, and such description is for clarity only, and those skilled in the art should integrate the description, and the embodiments may be combined as appropriate to form other embodiments understood by those skilled in the art.

Claims (9)

1. A manufacturing method based on a micro-electromechanical system device is characterized by comprising the following steps:
step S1: marks are arranged on the surfaces of the first chip and the second chip, a first electrode is formed at the position of the mark on the first chip, a second electrode is formed at the position of the mark on the second chip, and the first chip and the second chip are bonded together through connection;
step S2: bonding the first chip and the second chip, and thinning the bonded chip; oxidizing the surface of the thinned chip, and depositing silicon oxide to form an oxide layer; removing part of silicon oxide on the oxide layer to expose the conductive through hole, and then depositing a metal layer;
step S3: connecting the metal layer with the conductive via; adjusting the wiring, depositing a passivation layer, photoetching the passivation layer to expose the part of the second metal layer needing to be butted with the outside, and planting metal balls on the part butted with the outside.
2. A method of manufacturing a mems-based device as claimed in claim 1, wherein: depositing an additional layer on the metal layer, wherein the additional layer is a negative-acting photosensitive material.
3. A method of manufacturing a mems-based device as claimed in claim 1, wherein: the MEMS device layers of the first chip and the second chip are active layers and comprise active parts and fixed parts.
4. A method of manufacturing a mems-based device as claimed in claim 1, wherein: in step S1, the wire is disposed and two ends of the wire are electrically connected to the first electrode, the second electrode and the working element, respectively.
5. A method of manufacturing a mems-based device as claimed in claim 2, wherein: patterning the additional layer using the metal layer as a photomask.
6. A method of manufacturing a mems-based device as claimed in claim 5, wherein: removing the patterned metal layer after patterning the additional layer.
7. A method of manufacturing a mems-based device as claimed in claim 1, wherein: in step S1, the first electrode and the second electrode both penetrate through the bonding interface of the first chip and the second chip.
8. The method of claim 4, wherein the MEMS device comprises: and forming an electrode in ohmic contact with the working element at the position of the mark on the first chip.
9. A mems-based device according to claim 1, wherein: a sealed cavity is arranged between the first chip and the second chip, the first chip is a micro-electro-mechanical system sensor chip, the second chip is an IC integrated circuit chip, and the first chip and the second chip are connected in a bonding mode.
CN202110994901.7A 2021-08-27 2021-08-27 Manufacturing method based on micro electro mechanical system device Withdrawn CN113735056A (en)

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Application Number Priority Date Filing Date Title
CN202110994901.7A CN113735056A (en) 2021-08-27 2021-08-27 Manufacturing method based on micro electro mechanical system device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202110994901.7A CN113735056A (en) 2021-08-27 2021-08-27 Manufacturing method based on micro electro mechanical system device

Publications (1)

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CN113735056A true CN113735056A (en) 2021-12-03

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