CN113709642A - Piezoelectric MEMS actuator and method for forming and operating same - Google Patents
Piezoelectric MEMS actuator and method for forming and operating same Download PDFInfo
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/02—Loudspeakers
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- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
- B81B3/0021—Transducers for transforming electrical into mechanical energy or vice versa
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Abstract
The invention discloses a piezoelectric MEMS actuator, which comprises one or more execution units, wherein each execution unit comprises: a silicon thin film; a first piezoelectric layer and a first electrode structure on a first surface of the silicon membrane; a second piezoelectric layer and a second electrode structure on a second surface of the silicon membrane. The piezoelectric layers are respectively arranged on the two sides of the silicon film of the piezoelectric MEMS actuator, so that the driving force of the actuator can be improved, and the actuator can obtain larger displacement, force or rotation angle.
Description
Technical Field
The invention relates to the technical field of resonators, in particular to a piezoelectric MEMS actuator with a functional layer.
Background
In recent years, the semiconductor industry has rapidly developed and firmly occupied the mainstream position. Piezoelectric MEMS (micro-electro-mechanical systems) actuators based on piezoelectric thin films are one of the semiconductor devices with great development prospects. The existing piezoelectric MEMS actuator only comprises one piezoelectric layer, and the driving force of the actuator is relatively limited, so that larger displacement, force or rotation angle is difficult to obtain. Although some piezoelectric MEMS actuators include two piezoelectric layers, one above the other, and the driving force is larger than that of a single piezoelectric layer, the mechanical characteristics of the driving structure are poor.
Disclosure of Invention
In view of this, the present invention provides a piezoelectric MEMS actuator structure with stronger driving capability and better mechanical characteristics, and a method for forming and operating the same.
A first aspect of the present invention provides a piezoelectric MEMS actuator, comprising one or more execution units, each of the execution units comprising: a silicon thin film; a first piezoelectric layer and a first electrode structure on a first surface of the silicon membrane; a second piezoelectric layer and a second electrode structure on a second surface of the silicon membrane.
Optionally, the silicon thin film is monocrystalline silicon.
Optionally, the silicon thin film has a thickness of 0.1 to 50 micrometers, or 1 to 10 micrometers.
Optionally, the material of the first piezoelectric layer and the second piezoelectric layer is aluminum nitride, doped aluminum nitride, or PZT.
Optionally, the first piezoelectric layer and the second piezoelectric layer are the same material.
Optionally, the first piezoelectric layer and the second piezoelectric layer have opposite crystal directions.
Optionally, a thickness of the first piezoelectric layer or a thickness of the second piezoelectric layer is 10 nanometers to 10 micrometers, or 0.1 micrometers to 5 micrometers.
Optionally, the thickness h1 of the first piezoelectric layer and the thickness h2 of the second piezoelectric layer satisfy the following condition:
optionally, the thickness h3 of the silicon membrane and the thickness h1 of the first piezoelectric layer and the thickness h2 of the second piezoelectric layer satisfy the following condition: h3> (h1+ h2), or, h3>5 × (h1+ h 2).
Optionally, the method further comprises: a substrate having a top surface parallel to the silicon thin film.
Optionally, the actuator operates at a mechanical resonance point or a non-mechanical resonance point.
Optionally, the first electrode structure comprises a first electrode monolayer on a first surface of the first piezoelectric layer, and the second electrode structure comprises a second electrode monolayer on a second surface of the second piezoelectric layer; alternatively, the first electrode structure includes a first electrode pair on both surfaces of the first piezoelectric layer, and the second electrode structure includes a second electrode pair on both surfaces of the second piezoelectric layer.
Optionally, the actuator is a micromirror and comprises: the mirror surface structure is arranged on the surface of the silicon film; and the executing units are symmetrically arranged at two sides of the mirror structure, and the silicon films in all the executing units are common silicon films.
Optionally, the actuator is a speaker and comprises: the device comprises a plurality of execution units arranged in a preset array, wherein silicon films of the execution units are coplanar.
Optionally, the actuator is a switch and comprises: a support structure; an elevated structure located above the support structure; the silicon cantilever beam is positioned above the lifting structure and takes a position close to the lifting structure as a fixed end and a position far away from the lifting structure as a free end; a first contact located on a lower surface of the free end; the second contact piece is positioned on the upper surface of the supporting structure and corresponds to the first contact piece in position; a single or multiple execution units, all of which use the silicon cantilever as the silicon membrane.
The second aspect of the present invention provides a method for forming a piezoelectric MEMS actuator, where the piezoelectric MEMS actuator includes a plurality of execution units, and the method for forming the execution units includes: manufacturing a first piezoelectric layer and a first electrode structure on a first surface of top silicon of an SOI silicon wafer; turning over the SOI silicon chip and then bonding the SOI silicon chip with a substrate with a cavity; removing the bottom silicon and the buried oxide layer of the SOI silicon wafer; and manufacturing a second piezoelectric layer and a second electrode structure on the second surface of the top silicon of the SOI silicon wafer.
The third aspect of the present invention provides a method for forming a piezoelectric MEMS actuator, where the piezoelectric MEMS actuator includes a plurality of execution units, and the method for forming the execution units includes: manufacturing a first piezoelectric layer and a first electrode structure on a first surface of top silicon of an SOI silicon wafer; back etching the bottom silicon and the buried oxide layer of the SOI silicon chip to form a back cavity; and manufacturing a second piezoelectric layer and a second electrode structure at the bottom of the back cavity, namely, on the second surface of the top silicon of the SOI silicon wafer.
In a fourth aspect, the present invention provides a method for forming a piezoelectric MEMS actuator, where the piezoelectric MEMS actuator includes a plurality of execution units, and the method for forming the execution units includes: manufacturing a first piezoelectric layer and a first electrode structure on a first surface of a silicon wafer; turning over the current semiconductor structure and then bonding the current semiconductor structure onto the temporary support layer; thinning the silicon wafer to obtain a silicon film; manufacturing a second piezoelectric layer and a second electrode structure on the second surface of the silicon film; bonding a substrate with a cavity on the second surface of the silicon film; the current semiconductor structure is flipped and then the temporary support layer is removed.
A fifth aspect of the present invention provides a method for operating a piezoelectric MEMS actuator in the form of a micromirror, the method comprising: and applying an electric field to the piezoelectric layers of the execution units, wherein the first piezoelectric layer and the second piezoelectric layer which belong to the same execution unit have electric fields with the same direction, and the electric field applied to the piezoelectric layers of the execution units causes the deflection directions of the silicon films on two sides of the mirror structure to be opposite.
Optionally, the common silicon thin film is used as a ground electrode.
Optionally, the direction of the electric field of the piezoelectric layers in all the execution units on one side of the mirror structure is the same, and is opposite to the direction of the electric field of the piezoelectric layers in all the execution units on the other side of the mirror structure.
A sixth aspect of the present invention provides a method of operating a piezoelectric MEMS actuator, the actuator being in the form of a speaker or a switch, the method comprising: applying electric fields of the same direction to the first piezoelectric layer and the second piezoelectric layer of all the actuating units.
Optionally, the silicon thin film of all the execution units is used as a ground electrode.
According to the technical scheme of the invention, the piezoelectric layers are respectively arranged on the two sides of the silicon film, so that the driving force and the mechanical property of the actuator can be improved, and the actuator can obtain larger displacement, force or rotation angle.
Drawings
For purposes of illustration and not limitation, the present invention will now be described in accordance with its preferred embodiments, particularly with reference to the accompanying drawings, in which:
FIG. 1 is a schematic diagram of a piezoelectric MEMS actuator in accordance with an embodiment of the present invention;
FIG. 2 is a cross-sectional view of a piezoelectric MEMS actuator in accordance with a first embodiment of the present invention;
FIG. 3 is a cross-sectional view of a piezoelectric MEMS actuator in accordance with a second embodiment of the present invention;
FIGS. 4a, 4b, and 4c are a schematic perspective view, an initial state cross-sectional view, and an operating state cross-sectional view of a piezoelectric MEMS micro-mirror according to an embodiment of the present invention;
FIG. 5 is a cross-sectional view illustrating an operation state of another piezoelectric MEMS micro-mirror according to an embodiment of the present invention;
fig. 6a, 6b and 6c are a schematic perspective view, an initial sectional view and an operating sectional view of a piezoelectric MEMS speaker according to an embodiment of the present invention;
FIGS. 7a and 7b are cross-sectional views of an initial state and an operating state of a piezoelectric MEMS switch according to an embodiment of the present invention, respectively;
FIGS. 8a to 8c are schematic process diagrams illustrating a method for forming a piezoelectric MEMS micro-mirror according to a first embodiment of the present invention;
FIGS. 9a to 9c are schematic process diagrams illustrating a method for forming a piezoelectric MEMS micro-mirror according to a second embodiment of the present invention;
fig. 10a to 10e are process diagrams illustrating a method for forming a piezoelectric MEMS micro-mirror according to a third embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention are clearly and completely described below with reference to the drawings in the embodiments, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments that can be derived by one of ordinary skill in the art from the embodiments given herein are intended to be within the scope of the present invention.
The piezoelectric layers are respectively arranged on the two sides of the silicon film, so that the driving force of the actuator can be improved, and the actuator can obtain larger displacement, force or rotation angle. FIG. 1 is a schematic diagram of a piezoelectric MEMS actuator in accordance with an embodiment of the present invention. As shown, the piezoelectric MEMS actuator includes a silicon membrane 100, a first piezoelectric layer 200 on a first surface (upper surface in the drawing) of the silicon membrane 100, and a second piezoelectric layer 300 on a second surface (lower surface in the drawing) of the silicon membrane 100.
The piezoelectric MEMS actuator according to an embodiment of the present invention may further include a necessary electrode structure, wherein the electrode structure near the first piezoelectric layer is referred to as a first electrode structure, and similarly, the electrode structure near the second piezoelectric layer is referred to as a second electrode structure.
Fig. 2 is a schematic sectional view of a piezoelectric MEMS actuator according to a first embodiment of the present invention. As shown in fig. 2, the electrode structure takes the form of a single electrode layer. The first electrode structure is a first electrode monolayer 401 on a first surface of the first piezoelectric layer 200 and the second electrode structure is a second electrode monolayer 501 on a second surface of the second piezoelectric layer. In this case, the silicon thin film layer 100 also serves as a common electrode for the two piezoelectric layers. In operation, the electrical properties of the first electrode monolayer 401 and the second electrode monolayer 501 need to be set reasonably so that the directions of the electric fields in the first piezoelectric layer 200 and the second piezoelectric layer 300 are consistent.
Fig. 3 is a schematic cross-sectional view of a piezoelectric MEMS actuator according to a second embodiment of the present invention. As shown in fig. 3, the electrode structure takes the form of a pair of electrode pairs. The first electrode structure includes a first electrode pair 402a, 402b on the upper and lower surfaces of the first piezoelectric layer 200 and the second electrode structure includes a second electrode pair 502a, 502b on the upper and lower surfaces of the second piezoelectric layer 300. In operation, the electrical properties of the first electrode pair 402a, 402b and the second electrode pair 502a, 502b need to be properly set so that the electric fields in the first piezoelectric layer 200 and the second piezoelectric layer 300 are in the same direction.
According to the piezoelectric MEMS actuator of the embodiment of the present invention, the silicon thin film may be single crystal silicon. Single crystal silicon has good mechanical properties (high mechanical strength, high linearity, low creep, etc.) and low internal stress, thus enabling improved actuator output displacement, force or rotation angle, as well as better linearity, consistency and reliability.
According to the piezoelectric MEMS actuator of the embodiment of the present invention, the material of the first piezoelectric layer and the second piezoelectric layer is a piezoelectric film, including aluminum nitride, doped aluminum nitride, or PZT.
According to the piezoelectric MEMS actuator of the embodiment of the present invention, the thickness of the silicon thin film may be 0.1 to 50 micrometers, or 1 to 10 micrometers. The thickness of the first piezoelectric layer or the thickness of the second piezoelectric layer can be 10 nanometers to 10 micrometers, or 0.1 micrometers to 5 micrometers.
Wherein when the difference in thickness between the first piezoelectric layer and the second piezoelectric layer is small, the residual stress inside the two piezoelectric layers can be almost cancelled. For example, the thickness h1 of the first piezoelectric layer and the thickness h2 of the second piezoelectric layer may satisfy the following condition: (| h1-h2|)/(h1+ h2) < 0.25, or (| h1-h2|)/(h1+ h2) < 0.05.
The thickness of the silicon film is larger than that of the piezoelectric layers, so that the silicon film can be mainly used as a structural layer of the actuator, and meanwhile, because the distance between the piezoelectric layers is larger (mainly provided by the silicon film), the mechanical coupling effect of the two piezoelectric layers is reduced, and the stability and the working bandwidth of the actuator can be further improved. For example, the silicon film thickness h3, the first piezoelectric layer thickness h1, and the second piezoelectric layer thickness h2 may satisfy the following conditions: h3> (h1+ h2), or, h3>5 × (h1+ h 2).
The piezoelectric MEMS actuator according to the embodiment of the present invention may further include a substrate having a top surface parallel to the silicon thin film. This is advantageous for uniform growth and vertically symmetrical distribution of the piezoelectric film.
According to the piezoelectric MEMS actuator of the embodiment of the present invention, the actuator may operate at a mechanical resonance point or a non-mechanical resonance point. When the actuator works at the mechanical resonance point, the resonance characteristic (such as Q value) of the actuator can be adjusted by adjusting the ratio of the total thickness of the upper piezoelectric layer and the lower piezoelectric layer to the thickness of the silicon film, so that the design freedom degree of the actuator is increased; when the actuator works at a non-resonance point, the static characteristics (such as deflection angle) of the actuator can be adjusted by adjusting the electric fields in the upper and lower piezoelectric layers (by adjusting the voltages of the corresponding electrodes), so that the design freedom degree of the actuator is increased.
According to the piezoelectric MEMS actuator of the embodiment of the present invention, the actuator may be a micromirror, a speaker, or a switch.
Fig. 4a, 4b, and 4c are a schematic perspective view, an initial state cross-sectional view, and an operating state cross-sectional view of a piezoelectric MEMS micro-mirror according to an embodiment of the invention. In the drawing, M1 denotes a mirror structure, B1 denotes a common silicon thin film, L11 to L14 denote piezoelectric layers, L11 is opposite to L12 crystal orientation, and L13 is opposite to L14 crystal orientation, and E11 to E14 denote electrode monolayers. By applying positive potentials at E11 and E12 and negative potentials at E13 and E14 with B1 as ground electrodes, the reverse deflection of the left and right actuator elements can be achieved, thereby achieving the angular deflection α angle of the mirror structure M1.
Fig. 4a, 4b, and 4c illustrate an example in which 1 execution unit is provided on each side of the mirror structure M1. Here, 1 execution unit includes E11, L11, L12, and E12, and the other 1 execution unit includes E13, L13, L14, and E14. Alternatively, a plurality of actuators may be disposed on both sides of the mirror structure M1, and as shown in fig. 5, two actuators may be disposed on both sides of the mirror structure M1, where the arrows indicate the electric field directions. The mirror surface can rotate under the condition that the directions of electric fields of the execution units on two sides of the mirror surface structure are not symmetrical. Preferably, the same number of piezoelectric structures are arranged on two sides of the mirror structure, and the electric field direction of the piezoelectric structure on the same side is the same and opposite to that of the piezoelectric structure on the other side. For example, as shown in FIG. 5, the electric field directions of the actuating piezoelectric layers on the left side of the mirror structure M1 are all upward, and the electric field directions of the actuating elements on the right side are all downward.
Fig. 6a, 6b, and 6c are a schematic perspective view, an initial state cross-sectional view, and an operating state cross-sectional view of a piezoelectric MEMS speaker according to an embodiment of the present invention (where the cross-sectional views refer to a P1 plane and a P2 plane as cross-sections in the perspective view), respectively. In the drawing, C1 and C2 denote electrode pins, M12 and M22 denote execution units, B21 and B22 denote silicon thin films, L21 to L24 denote piezoelectric layers, L21 is opposite to the crystal orientation of L22, and L23 is opposite to the crystal orientation of L24, and E21 to E24 denote electrode monolayers. By using B21 and B22 as ground electrodes, the same polarity of electric potentials (such as positive electric potentials or negative electric potentials) are applied to E21, E22, E23 and E24, the same-direction deflection of the M12 and M22 actuators is realized, and air is pushed to realize sound pressure conversion.
Fig. 7a and 7b are an initial state cross-sectional view and an operating state cross-sectional view of a piezoelectric MEMS switch according to an embodiment of the present invention, respectively. In the figure, B3 represents a silicon membrane, L31 and L32 represent piezoelectric layers, E31 and E32 represent electrode monolayers, S3a represents a support structure, S3B represents an elevated structure, and contacts a and B represent a pair of well-conducting contacts of the switch. By using B3 as a ground electrode and applying electric potentials with the same polarity (such as positive electric potentials or negative electric potentials) to E31 and E32, large-angle deflection of the actuator is realized, so that clutch control of the contact pieces A and B is realized, and finally on-off control of the piezoelectric MEMS switch is realized.
According to the piezoelectric MEMS actuator and the operation method thereof disclosed by the embodiment of the invention, the piezoelectric layers are respectively arranged on the two sides of the silicon film, so that the driving force and the mechanical property of the actuator can be improved, and the actuator can obtain larger displacement, force or rotation angle.
For a better understanding of those skilled in the art, the method of forming the piezoelectric MEMS micromirror is described in detail below.
Fig. 8a to 8c are schematic process views illustrating a method for forming a piezoelectric MEMS micro-mirror according to a first embodiment of the present invention. First, as shown in fig. 8a, a piezoelectric layer and an electrode layer are fabricated on an SOI silicon wafer. B2 is bottom silicon of the SOI silicon wafer, OX is buried oxide layer of the SOI silicon wafer, B1 is top silicon of the SOI silicon wafer, wherein the thickness of the top silicon is the thickness of the actuator silicon film. L2 and L4 are piezoelectric layers and E2 and E4 are electrode layers. Next, as shown in fig. 8B, the semiconductor structure obtained in the previous step is flipped and bonded to another silicon wafer B3 with a cavity. Then, as shown in fig. 8c, after removing the bottom silicon B2 and the buried oxide layer OX, the piezoelectric layers L1 and L3, the electrode layers L1 and L3, and the mirror surface M1 on the other side are formed on the top silicon B1.
Fig. 9a to 9c are process diagrams illustrating a method for forming a piezoelectric MEMS micro-mirror according to a second embodiment of the present invention. First, as shown in fig. 9a, the piezoelectric layers L1 and L3, the electrode layers E1 and E3, and the mirror M1 are formed on an SOI silicon wafer (including bottom silicon B2, buried oxide layer OX, top silicon B1). Next, as shown in fig. 9B, the buried oxide layer OX and the bottom silicon B2 are removed by a back etching process. Then, as shown in fig. 9c, corresponding piezoelectric layers L2 and L4 and electrode layers E2 and E4 are formed on the surface of the silicon membrane (i.e., top silicon B1) inside the back cavity.
Fig. 10a to 10e are process diagrams illustrating a method for forming a piezoelectric MEMS micro-mirror according to a third embodiment of the present invention. First, as shown in fig. 10a, a piezoelectric layer L1 and L3, electrode layers E1 and E3, and a mirror surface M1 are formed on a common silicon wafer B1. And then bonded to a temporary support layer D1 after being turned over as shown in fig. 10b, wherein the material of the temporary support layer may be photoresist or other polymer. Then, as shown in fig. 10c, the thickness of the silicon wafer B1 is reduced to obtain a silicon thin film B1, and corresponding piezoelectric layers L2 and L4 and electrode layers E2 and E4 are formed on the reduced surface. Next, as shown in fig. 10d, a substrate B2 with a cavity is bonded on top. Finally, as shown in fig. 10e, the temporary support layer D1 is removed after flipping.
The method for forming the piezoelectric MEMS actuator has the advantages of simplicity, convenience and practicability, and can be used for forming the piezoelectric layers on the two sides of the silicon film respectively, so that the driving force of the actuator can be improved, and the actuator can obtain larger displacement, force or rotation angle.
The above-described embodiments should not be construed as limiting the scope of the invention. Those skilled in the art will appreciate that various modifications, combinations, sub-combinations, and substitutions can occur, depending on design requirements and other factors. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (23)
1. A piezoelectric MEMS actuator comprising one or more actuator units, each actuator unit comprising:
a silicon thin film;
a first piezoelectric layer and a first electrode structure on a first surface of the silicon membrane;
a second piezoelectric layer and a second electrode structure on a second surface of the silicon membrane.
2. The piezoelectric MEMS actuator of claim 1, wherein the silicon membrane is single crystal silicon.
3. Piezoelectric MEMS actuator according to claim 1, wherein the thickness of the silicon membrane is 0.1 to 50 microns, or 1 to 10 microns.
4. The piezoelectric MEMS actuator of claim 1, wherein the material of the first piezoelectric layer and the second piezoelectric layer is aluminum nitride, doped aluminum nitride, or PZT.
5. The piezoelectric MEMS actuator of claim 1, wherein the first piezoelectric layer and the second piezoelectric layer are the same material.
6. The piezoelectric MEMS actuator of claim 1, wherein the first piezoelectric layer and the second piezoelectric layer have opposite crystal directions.
7. The piezoelectric MEMS actuator of claim 1, wherein the thickness of the first piezoelectric layer or the thickness of the second piezoelectric layer is 10 nanometers to 10 micrometers, or 0.1 micrometers to 5 micrometers.
8. The piezoelectric MEMS actuator of claim 1, wherein the thickness h1 of the first piezoelectric layer and the thickness h2 of the second piezoelectric layer satisfy the following condition:
9. piezoelectric MEMS actuator according to claim 1, wherein the thickness h3 of the silicon membrane and the thickness h1 of the first piezoelectric layer and the thickness h2 of the second piezoelectric layer satisfy the following condition: h3> (h1+ h2), or, h3>5 × (h1+ h 2).
10. The piezoelectric MEMS actuator of claim 1, further comprising: a substrate having a top surface parallel to the silicon thin film.
11. The piezoelectric MEMS actuator of claim 1, wherein the actuator operates at a point of mechanical resonance or a point of non-mechanical resonance.
12. Piezoelectric MEMS actuator according to claim 1,
the first electrode structure comprises a first electrode monolayer on a first surface of the first piezoelectric layer and the second electrode structure comprises a second electrode monolayer on a second surface of the second piezoelectric layer;
alternatively, the first and second electrodes may be,
the first electrode structure includes a first electrode pair on both surfaces of the first piezoelectric layer, and the second electrode structure includes a second electrode pair on both surfaces of the second piezoelectric layer.
13. The piezoelectric MEMS actuator of any one of claims 1 to 12, wherein the actuator is a micromirror and comprises:
the mirror surface structure is arranged on the surface of the silicon film;
and the executing units are symmetrically arranged at two sides of the mirror structure, and the silicon films in all the executing units are common silicon films.
14. Piezoelectric MEMS actuator according to any of claims 1 to 12, wherein the actuator is a loudspeaker and comprises:
the device comprises a plurality of execution units arranged in a preset array, wherein silicon films of the execution units are coplanar.
15. Piezoelectric MEMS actuator according to any of claims 1 to 12, wherein the actuator is a switch and comprises:
a support structure;
an elevated structure located above the support structure;
the silicon cantilever beam is positioned above the lifting structure and takes a position close to the lifting structure as a fixed end and a position far away from the lifting structure as a free end;
a first contact located on a lower surface of the free end;
the second contact piece is positioned on the upper surface of the supporting structure and corresponds to the first contact piece in position;
a single or multiple execution units, all of which use the silicon cantilever as the silicon membrane.
16. A method for forming a piezoelectric MEMS actuator, the piezoelectric MEMS actuator comprising a plurality of execution units, the method for forming the execution units comprising:
manufacturing a first piezoelectric layer and a first electrode structure on a first surface of top silicon of an SOI silicon wafer;
turning over the SOI silicon chip and then bonding the SOI silicon chip with a substrate with a cavity;
removing the bottom silicon and the buried oxide layer of the SOI silicon wafer;
and manufacturing a second piezoelectric layer and a second electrode structure on the second surface of the top silicon of the SOI silicon wafer.
17. A method for forming a piezoelectric MEMS actuator, the piezoelectric MEMS actuator comprising a plurality of execution units, the method for forming the execution units comprising:
manufacturing a first piezoelectric layer and a first electrode structure on a first surface of top silicon of an SOI silicon wafer;
back etching the bottom silicon and the buried oxide layer of the SOI silicon chip to form a back cavity;
and manufacturing a second piezoelectric layer and a second electrode structure at the bottom of the back cavity, namely, on the second surface of the top silicon of the SOI silicon wafer.
18. A method for forming a piezoelectric MEMS actuator, the piezoelectric MEMS actuator comprising a plurality of execution units, the method for forming the execution units comprising:
manufacturing a first piezoelectric layer and a first electrode structure on a first surface of a silicon wafer;
turning over the current semiconductor structure and then bonding the current semiconductor structure onto the temporary support layer;
thinning the silicon wafer to obtain a silicon film;
manufacturing a second piezoelectric layer and a second electrode structure on the second surface of the silicon film;
bonding a substrate with a cavity on the second surface of the silicon film;
the current semiconductor structure is flipped and then the temporary support layer is removed.
19. A method of operating a piezoelectric MEMS actuator, wherein the actuator is a piezoelectric MEMS actuator as claimed in claim 13, the method comprising:
and applying an electric field to the piezoelectric layers of the execution units, wherein the first piezoelectric layer and the second piezoelectric layer which belong to the same execution unit have electric fields with the same direction, and the electric field applied to the piezoelectric layers of the execution units causes the deflection directions of the silicon films on two sides of the mirror structure to be opposite.
20. A method of operating a piezoelectric MEMS actuator as claimed in claim 19 wherein the common silicon membrane is used as a ground electrode.
21. A method of operating a piezoelectric MEMS actuator as claimed in claim 19 or 20 wherein the direction of the electric field of the piezoelectric layer in all the actuator units on one side of the mirror structure is the same and opposite to the direction of the electric field of the piezoelectric layer in all the actuator units on the other side of the mirror structure.
22. A method of operating a piezoelectric MEMS actuator, wherein the actuator is a piezoelectric MEMS actuator as claimed in claim 14 or 15, the method comprising:
applying electric fields of the same direction to the first piezoelectric layer and the second piezoelectric layer of all the actuating units.
23. A method of operating a piezoelectric MEMS actuator as claimed in claim 22, wherein the silicon thin film of all the actuator units is used as a ground electrode.
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